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TB62785NG TB62785NG Toshiba Semiconductor and Storage docget.jsp?did=28829&prodName=TB62785NG Description: IC LED DRIVER LINEAR 50MA 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Voltage - Output: 17V
Mounting Type: Through Hole
Number of Outputs: 8
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SDIP
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
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7UL1G08FS,LF 7UL1G08FS,LF Toshiba Semiconductor and Storage Description: IC GATE AND 1CH 2-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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7UL1G08FS,LF 7UL1G08FS,LF Toshiba Semiconductor and Storage Description: IC GATE AND 1CH 2-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 6297 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
33+0.55 EUR
36+0.49 EUR
100+0.34 EUR
250+0.29 EUR
500+0.23 EUR
1000+0.18 EUR
2500+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 25
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7UL1G32FS,LF 7UL1G32FS,LF Toshiba Semiconductor and Storage 7UL1G32FS_datasheet_en_20221004.pdf?did=60335&prodName=7UL1G32FS Description: IC GATE OR 1CH 2-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.14 EUR
Mindestbestellmenge: 10000
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7UL1G32FS,LF 7UL1G32FS,LF Toshiba Semiconductor and Storage 7UL1G32FS_datasheet_en_20221004.pdf?did=60335&prodName=7UL1G32FS Description: IC GATE OR 1CH 2-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
33+0.55 EUR
36+0.49 EUR
100+0.34 EUR
250+0.29 EUR
500+0.23 EUR
1000+0.18 EUR
2500+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 25
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TCKE805NL,RF TCKE805NL,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Produkt ist nicht verfügbar
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TCKE805NL,RF TCKE805NL,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 3710 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.01 EUR
10+2.52 EUR
25+2.12 EUR
100+1.68 EUR
250+1.46 EUR
500+1.33 EUR
1000+1.22 EUR
Mindestbestellmenge: 5
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SSM6K514NU,LF SSM6K514NU,LF Toshiba Semiconductor and Storage SSM6K514NU_datasheet_en_20240930.pdf?did=53150&prodName=SSM6K514NU Description: MOSFET N-CH 40V 12A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.28 EUR
6000+0.25 EUR
9000+0.22 EUR
Mindestbestellmenge: 3000
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SSM6K514NU,LF SSM6K514NU,LF Toshiba Semiconductor and Storage SSM6K514NU_datasheet_en_20240930.pdf?did=53150&prodName=SSM6K514NU Description: MOSFET N-CH 40V 12A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
auf Bestellung 13887 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
25+0.71 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 16
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2SC2229(TE6SAN1F,M 2SC2229(TE6SAN1F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(MIT1F,M) 2SC2229-O(MIT1F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-O(MITIF,M) 2SC2229-O(MITIF,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(SHP,F,M) 2SC2229-O(SHP,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(SHP1,F,M 2SC2229-O(SHP1,F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(T6MIT1FM 2SC2229-O(T6MIT1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(T6SHP1FM 2SC2229-O(T6SHP1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(TE6,F,M) 2SC2229-O(TE6,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(MIT,F,M) 2SC2229-Y(MIT,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(MIT1,F,M 2SC2229-Y(MIT1,F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(SHP,F,M) 2SC2229-Y(SHP,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(SHP1,F,M 2SC2229-Y(SHP1,F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(T6MIT1FM 2SC2229-Y(T6MIT1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(T6MITIFM 2SC2229-Y(T6MITIFM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(T6ONK1FM 2SC2229-Y(T6ONK1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(TE6,F,M) 2SC2229-Y(TE6,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y,F(J 2SC2229-Y,F(J Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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TRS24N65FB,S1Q TRS24N65FB,S1Q Toshiba Semiconductor and Storage TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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TRS24N65FB,S1F(S TRS24N65FB,S1F(S Toshiba Semiconductor and Storage TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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SSM6N40TU,LF SSM6N40TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11018&prodName=SSM6N40TU Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
auf Bestellung 9000 Stücke:
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3000+0.22 EUR
6000+0.20 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
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SSM6N40TU,LF SSM6N40TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11018&prodName=SSM6N40TU Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
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18+0.99 EUR
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100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
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RFM01U7P(TE12L,F) RFM01U7P(TE12L,F) Toshiba Semiconductor and Storage RFM01U7P_datasheet_en_20140301.pdf?did=22464&prodName=RFM01U7P Description: RF MOSFET 7.2V PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Mounting Type: Surface Mount
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 1.2W
Gain: 10.8dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PW-MINI
Part Status: Not For New Designs
Voltage - Rated: 20 V
Voltage - Test: 7.2 V
Current - Test: 100 mA
Produkt ist nicht verfügbar
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2SC4935-Y,Q(J 2SC4935-Y,Q(J Toshiba Semiconductor and Storage 2SC4935_2010-12-21.pdf Description: TRANS NPN 50V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TLP241A(F TLP241A(F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 5 Stücke:
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TLP241A(LF1,F TLP241A(LF1,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
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6+3.19 EUR
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TLP241A(D4,F TLP241A(D4,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 242 Stücke:
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5+3.61 EUR
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TK160F10N1,LXGQ TK160F10N1,LXGQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
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1000+2.79 EUR
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TK160F10N1,LXGQ TK160F10N1,LXGQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4477 Stücke:
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3+7.52 EUR
10+4.98 EUR
100+3.54 EUR
500+2.92 EUR
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2SB1457,T6TOTOF(J 2SB1457,T6TOTOF(J Toshiba Semiconductor and Storage 2SB1457_2009-12-21.pdf Description: TRANS PNP 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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TLP2630(TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP2630(MAT,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP2630(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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SSM6N815R,LF SSM6N815R,LF Toshiba Semiconductor and Storage SSM6N815R_datasheet_en_20170829.pdf?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.22 EUR
21000+0.21 EUR
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SSM6N815R,LF SSM6N815R,LF Toshiba Semiconductor and Storage SSM6N815R_datasheet_en_20170829.pdf?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 23103 Stücke:
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16+1.14 EUR
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100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
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TC7WZ08FK,LJ(CT TC7WZ08FK,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=54672&prodName=TC7WZ08FK Description: IC GATE AND 2CH 4-INP US8
Produkt ist nicht verfügbar
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TC7SB3157CFU,LF(CT TC7SB3157CFU,LF(CT Toshiba Semiconductor and Storage TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.09 EUR
6000+0.09 EUR
9000+0.08 EUR
15000+0.08 EUR
21000+0.08 EUR
30000+0.08 EUR
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TC7SB3157CFU,LF(CT TC7SB3157CFU,LF(CT Toshiba Semiconductor and Storage TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 38631 Stücke:
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72+0.25 EUR
112+0.16 EUR
126+0.14 EUR
149+0.12 EUR
250+0.11 EUR
500+0.10 EUR
1000+0.10 EUR
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TRS12N65FB,S1Q TRS12N65FB,S1Q Toshiba Semiconductor and Storage docget.jsp?did=69233&prodName=TRS12N65FB Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 53 Stücke:
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2+10.89 EUR
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TK099V65Z,LQ TK099V65Z,LQ Toshiba Semiconductor and Storage TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 12500 Stücke:
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2500+4.07 EUR
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TK099V65Z,LQ TK099V65Z,LQ Toshiba Semiconductor and Storage TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.36 EUR
10+7.01 EUR
100+5.68 EUR
500+5.04 EUR
1000+4.32 EUR
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TBD62781AFWG,EL TBD62781AFWG,EL Toshiba Semiconductor and Storage TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.18 EUR
2000+1.12 EUR
Mindestbestellmenge: 1000
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TBD62781AFWG,EL TBD62781AFWG,EL Toshiba Semiconductor and Storage TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 3675 Stücke:
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8+2.48 EUR
10+2.06 EUR
100+1.64 EUR
500+1.39 EUR
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TBD62786AFWG,EL TBD62786AFWG,EL Toshiba Semiconductor and Storage TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 5000 Stücke:
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1000+1.13 EUR
Mindestbestellmenge: 1000
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TBD62786AFWG,EL TBD62786AFWG,EL Toshiba Semiconductor and Storage TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 6642 Stücke:
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5+3.91 EUR
10+2.51 EUR
100+1.71 EUR
500+1.37 EUR
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TBD62786APG TBD62786APG Toshiba Semiconductor and Storage TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG Description: IC PWR DRIVER P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
auf Bestellung 790 Stücke:
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5+4.22 EUR
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100+1.87 EUR
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2SA2215,LF 2SA2215,LF Toshiba Semiconductor and Storage docget.jsp?did=22651&prodName=2SA2215 Description: TRANS PNP 20V 2.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
Mindestbestellmenge: 3000
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2SA2215,LF 2SA2215,LF Toshiba Semiconductor and Storage docget.jsp?did=22651&prodName=2SA2215 Description: TRANS PNP 20V 2.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
auf Bestellung 5300 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.00 EUR
29+0.63 EUR
100+0.40 EUR
500+0.30 EUR
1000+0.27 EUR
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TA76432AS,T6F(J TA76432AS,T6F(J Toshiba Semiconductor and Storage TA76432A_Series_2011-09-29.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TA76432S(F,M) TA76432S(F,M) Toshiba Semiconductor and Storage TA76432FT%2CFC%2CF%2CFR%2CS.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TA76432S(T6MURATFM TA76432S(T6MURATFM Toshiba Semiconductor and Storage TA76432FT,FC,F,FR,S.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TA76432S(TE6,F,M) TA76432S(TE6,F,M) Toshiba Semiconductor and Storage TA76432FT%2CFC%2CF%2CFR%2CS.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TB62785NG docget.jsp?did=28829&prodName=TB62785NG
TB62785NG
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 50MA 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Voltage - Output: 17V
Mounting Type: Through Hole
Number of Outputs: 8
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SDIP
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
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7UL1G08FS,LF
7UL1G08FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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7UL1G08FS,LF
7UL1G08FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 6297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
33+0.55 EUR
36+0.49 EUR
100+0.34 EUR
250+0.29 EUR
500+0.23 EUR
1000+0.18 EUR
2500+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 25
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7UL1G32FS,LF 7UL1G32FS_datasheet_en_20221004.pdf?did=60335&prodName=7UL1G32FS
7UL1G32FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.14 EUR
Mindestbestellmenge: 10000
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7UL1G32FS,LF 7UL1G32FS_datasheet_en_20221004.pdf?did=60335&prodName=7UL1G32FS
7UL1G32FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
33+0.55 EUR
36+0.49 EUR
100+0.34 EUR
250+0.29 EUR
500+0.23 EUR
1000+0.18 EUR
2500+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 25
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TCKE805NL,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE805NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Produkt ist nicht verfügbar
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TCKE805NL,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE805NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 3710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+2.52 EUR
25+2.12 EUR
100+1.68 EUR
250+1.46 EUR
500+1.33 EUR
1000+1.22 EUR
Mindestbestellmenge: 5
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SSM6K514NU,LF SSM6K514NU_datasheet_en_20240930.pdf?did=53150&prodName=SSM6K514NU
SSM6K514NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 12A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
6000+0.25 EUR
9000+0.22 EUR
Mindestbestellmenge: 3000
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SSM6K514NU,LF SSM6K514NU_datasheet_en_20240930.pdf?did=53150&prodName=SSM6K514NU
SSM6K514NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 12A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
auf Bestellung 13887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
25+0.71 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 16
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2SC2229(TE6SAN1F,M 2SC2229_2009-12-21.pdf
2SC2229(TE6SAN1F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-O(MIT1F,M) 2SC2229_2009-12-21.pdf
2SC2229-O(MIT1F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-O(MITIF,M) 2SC2229_2009-12-21.pdf
2SC2229-O(MITIF,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-O(SHP,F,M) 2SC2229_2009-12-21.pdf
2SC2229-O(SHP,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(SHP1,F,M 2SC2229_2009-12-21.pdf
2SC2229-O(SHP1,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-O(T6MIT1FM 2SC2229_2009-12-21.pdf
2SC2229-O(T6MIT1FM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-O(T6SHP1FM 2SC2229_2009-12-21.pdf
2SC2229-O(T6SHP1FM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-O(TE6,F,M) 2SC2229_2009-12-21.pdf
2SC2229-O(TE6,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-Y(MIT,F,M) 2SC2229_2009-12-21.pdf
2SC2229-Y(MIT,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(MIT1,F,M 2SC2229_2009-12-21.pdf
2SC2229-Y(MIT1,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(SHP,F,M) 2SC2229_2009-12-21.pdf
2SC2229-Y(SHP,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-Y(SHP1,F,M 2SC2229_2009-12-21.pdf
2SC2229-Y(SHP1,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-Y(T6MIT1FM 2SC2229_2009-12-21.pdf
2SC2229-Y(T6MIT1FM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-Y(T6MITIFM 2SC2229_2009-12-21.pdf
2SC2229-Y(T6MITIFM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC2229-Y(T6ONK1FM 2SC2229_2009-12-21.pdf
2SC2229-Y(T6ONK1FM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y(TE6,F,M) 2SC2229_2009-12-21.pdf
2SC2229-Y(TE6,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2229-Y,F(J 2SC2229_2009-12-21.pdf
2SC2229-Y,F(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS24N65FB,S1Q TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB
TRS24N65FB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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TRS24N65FB,S1F(S TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB
TRS24N65FB,S1F(S
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N40TU,LF docget.jsp?did=11018&prodName=SSM6N40TU
SSM6N40TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.20 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
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SSM6N40TU,LF docget.jsp?did=11018&prodName=SSM6N40TU
SSM6N40TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
auf Bestellung 10754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
29+0.61 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 18
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RFM01U7P(TE12L,F) RFM01U7P_datasheet_en_20140301.pdf?did=22464&prodName=RFM01U7P
RFM01U7P(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 7.2V PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Mounting Type: Surface Mount
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 1.2W
Gain: 10.8dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PW-MINI
Part Status: Not For New Designs
Voltage - Rated: 20 V
Voltage - Test: 7.2 V
Current - Test: 100 mA
Produkt ist nicht verfügbar
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2SC4935-Y,Q(J 2SC4935_2010-12-21.pdf
2SC4935-Y,Q(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TLP241A(F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLP241A(LF1,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+2.28 EUR
Mindestbestellmenge: 6
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TLP241A(D4,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(D4,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
10+2.59 EUR
100+1.98 EUR
Mindestbestellmenge: 5
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TK160F10N1,LXGQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
TK160F10N1,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.79 EUR
Mindestbestellmenge: 1000
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TK160F10N1,LXGQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
TK160F10N1,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.52 EUR
10+4.98 EUR
100+3.54 EUR
500+2.92 EUR
Mindestbestellmenge: 3
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2SB1457,T6TOTOF(J 2SB1457_2009-12-21.pdf
2SB1457,T6TOTOF(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2630(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2630(MAT,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2630(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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SSM6N815R,LF SSM6N815R_datasheet_en_20170829.pdf?did=58964&prodName=SSM6N815R
SSM6N815R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.22 EUR
21000+0.21 EUR
Mindestbestellmenge: 3000
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SSM6N815R,LF SSM6N815R_datasheet_en_20170829.pdf?did=58964&prodName=SSM6N815R
SSM6N815R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 23103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
26+0.70 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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TC7WZ08FK,LJ(CT docget.jsp?did=54672&prodName=TC7WZ08FK
TC7WZ08FK,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 4-INP US8
Produkt ist nicht verfügbar
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TC7SB3157CFU,LF(CT TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.09 EUR
9000+0.08 EUR
15000+0.08 EUR
21000+0.08 EUR
30000+0.08 EUR
Mindestbestellmenge: 3000
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TC7SB3157CFU,LF(CT TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
auf Bestellung 38631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
112+0.16 EUR
126+0.14 EUR
149+0.12 EUR
250+0.11 EUR
500+0.10 EUR
1000+0.10 EUR
Mindestbestellmenge: 72
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TRS12N65FB,S1Q docget.jsp?did=69233&prodName=TRS12N65FB
TRS12N65FB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.89 EUR
30+6.02 EUR
Mindestbestellmenge: 2
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TK099V65Z,LQ TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z
TK099V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+4.07 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TK099V65Z,LQ TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z
TK099V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.36 EUR
10+7.01 EUR
100+5.68 EUR
500+5.04 EUR
1000+4.32 EUR
Mindestbestellmenge: 3
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TBD62781AFWG,EL TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG
TBD62781AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.18 EUR
2000+1.12 EUR
Mindestbestellmenge: 1000
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TBD62781AFWG,EL TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG
TBD62781AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 3675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+2.06 EUR
100+1.64 EUR
500+1.39 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TBD62786AFWG,EL TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG
TBD62786AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.13 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
TBD62786AFWG,EL TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG
TBD62786AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 6642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.91 EUR
10+2.51 EUR
100+1.71 EUR
500+1.37 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TBD62786APG TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG
TBD62786APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.22 EUR
20+2.42 EUR
100+1.87 EUR
500+1.50 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
2SA2215,LF docget.jsp?did=22651&prodName=2SA2215
2SA2215,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA2215,LF docget.jsp?did=22651&prodName=2SA2215
2SA2215,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
auf Bestellung 5300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
29+0.63 EUR
100+0.40 EUR
500+0.30 EUR
1000+0.27 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
TA76432AS,T6F(J TA76432A_Series_2011-09-29.pdf
TA76432AS,T6F(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S(F,M) TA76432FT%2CFC%2CF%2CFR%2CS.pdf
TA76432S(F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S(T6MURATFM TA76432FT,FC,F,FR,S.pdf
TA76432S(T6MURATFM
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA76432S(TE6,F,M) TA76432FT%2CFC%2CF%2CFR%2CS.pdf
TA76432S(TE6,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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