Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13584) > Seite 142 nach 227

Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 137 138 139 140 141 142 143 144 145 146 147 154 176 198 220 227  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
74VHCV245FT 74VHCV245FT Toshiba Semiconductor and Storage docget.jsp?did=15734&prodName=74VHCV245FT Description: IC TXRX NON-INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOP
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.25 EUR
5000+0.24 EUR
17500+0.23 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74VHCV245FT 74VHCV245FT Toshiba Semiconductor and Storage docget.jsp?did=15734&prodName=74VHCV245FT Description: IC TXRX NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOP
auf Bestellung 26311 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.61 EUR
50+0.42 EUR
57+0.37 EUR
100+0.32 EUR
250+0.3 EUR
500+0.29 EUR
1000+0.27 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TRS16N65FB,S1F(S TRS16N65FB,S1F(S Toshiba Semiconductor and Storage Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R70APL,L1Q TPH3R70APL,L1Q Toshiba Semiconductor and Storage TPH3R70APL_datasheet_en_20191017.pdf?did=59335&prodName=TPH3R70APL Description: MOSFET N-CH 100V 90A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.37 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R70APL,L1Q TPH3R70APL,L1Q Toshiba Semiconductor and Storage TPH3R70APL_datasheet_en_20191017.pdf?did=59335&prodName=TPH3R70APL Description: MOSFET N-CH 100V 90A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 12784 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.96 EUR
10+3.2 EUR
50+2.43 EUR
100+2.19 EUR
500+1.75 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPWR6003PL,L1Q TPWR6003PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=36851&prodName=TPWR6003PL Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+2.49 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPWR6003PL,L1Q TPWR6003PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=36851&prodName=TPWR6003PL Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 9903 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.31 EUR
10+4.81 EUR
100+3.38 EUR
500+3.05 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1101MFV,L3F(CT RN1101MFV,L3F(CT Toshiba Semiconductor and Storage RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.051 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1101MFV,L3F(CT RN1101MFV,L3F(CT Toshiba Semiconductor and Storage RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 15250 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
113+0.19 EUR
182+0.12 EUR
500+0.083 EUR
1000+0.074 EUR
2000+0.064 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1101MFV,L3F RN1101MFV,L3F Toshiba Semiconductor and Storage RN1101-06MFV_2010-03-07.pdf Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2EE24,LM(CT TCR2EE24,LM(CT Toshiba Semiconductor and Storage TCR2EE24_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE24 Description: IC REG LINEAR 2.4V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2EE24,LM(CT TCR2EE24,LM(CT Toshiba Semiconductor and Storage TCR2EE24_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE24 Description: IC REG LINEAR 2.4V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4902,LF(CT RN4902,LF(CT Toshiba Semiconductor and Storage RN4902_datasheet_en_20230213.pdf?did=18950&prodName=RN4902 Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4902,LF(CT RN4902,LF(CT Toshiba Semiconductor and Storage RN4902_datasheet_en_20230213.pdf?did=18950&prodName=RN4902 Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
auf Bestellung 4100 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.5 EUR
71+0.3 EUR
114+0.19 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67S179FTG,EL TB67S179FTG,EL Toshiba Semiconductor and Storage TB67S179FTG_datasheet_en_20151126.pdf?did=35805&prodName=TB67S179FTG Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
Step Resolution: 1 ~ 1/32
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-VQFN (7x7)
Voltage - Load: 10V ~ 60V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+2.61 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67S179FTG,EL TB67S179FTG,EL Toshiba Semiconductor and Storage TB67S179FTG_datasheet_en_20151126.pdf?did=35805&prodName=TB67S179FTG Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1 ~ 1/32
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-VQFN (7x7)
Voltage - Load: 10V ~ 60V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
auf Bestellung 7249 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.38 EUR
10+4.03 EUR
25+3.7 EUR
100+3.32 EUR
250+3.14 EUR
500+3.03 EUR
1000+2.95 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74ACT240F(EL,F) TC74ACT240F(EL,F) Toshiba Semiconductor and Storage TC74ACT240F_datasheet_en_20210323.pdf?did=70628&prodName=TC74ACT240F Description: IC BUFF INVERT 5.5V 20SOP
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74ACT240F(EL,F) TC74ACT240F(EL,F) Toshiba Semiconductor and Storage TC74ACT240F_datasheet_en_20210323.pdf?did=70628&prodName=TC74ACT240F Description: IC BUFF INVERT 5.5V 20SOP
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SB3157DL6X,L TC7SB3157DL6X,L Toshiba Semiconductor and Storage Description: IC MUX/DEMUX 1 X 2:1 6MP6D
Supplier Device Package: 6-MP6D (1.45x1)
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 1 x 2:1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SB3157DL6X,L TC7SB3157DL6X,L Toshiba Semiconductor and Storage Description: IC MUX/DEMUX 1 X 2:1 6MP6D
Supplier Device Package: 6-MP6D (1.45x1)
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 1 x 2:1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1708JE(TE85L,F) RN1708JE(TE85L,F) Toshiba Semiconductor and Storage RN1708JE_datasheet_en_20140301.pdf?did=19124&prodName=RN1708JE Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1708JE(TE85L,F) RN1708JE(TE85L,F) Toshiba Semiconductor and Storage RN1708JE_datasheet_en_20140301.pdf?did=19124&prodName=RN1708JE Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3890 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
34+0.62 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1709JE(TE85L,F) RN1709JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19124&prodName=RN1709JE Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1709JE(TE85L,F) RN1709JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19124&prodName=RN1709JE Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3773 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
34+0.62 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC6026MFV-Y,L3F 2SC6026MFV-Y,L3F Toshiba Semiconductor and Storage docget.jsp?did=6106&prodName=2SC6026MFV Description: TRANS NPN 50V 0.15A VESM
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.049 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC6026MFV-Y,L3F 2SC6026MFV-Y,L3F Toshiba Semiconductor and Storage docget.jsp?did=6106&prodName=2SC6026MFV Description: TRANS NPN 50V 0.15A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 21468 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
114+0.18 EUR
185+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
2000+0.064 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67S141NG TB67S141NG Toshiba Semiconductor and Storage docget.jsp?did=15635&prodName=TB67S141NG Description: IC MOTOR DRIVER UNIPOLAR 24SDIP
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Unipolar
Supplier Device Package: 24-SDIP
Voltage - Load: 10V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.98 EUR
20+5.68 EUR
40+5.37 EUR
100+5.05 EUR
260+4.78 EUR
500+4.64 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7SBL66CFU,LF(CT TC7SBL66CFU,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=12377&prodName=TC7SBL66CFU Description: IC SWITCH SPST SINGLE USV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7SBL66CFU,LF(CT TC7SBL66CFU,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=12377&prodName=TC7SBL66CFU Description: IC SWITCH SPST SINGLE USV
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.74 EUR
35+0.61 EUR
38+0.55 EUR
100+0.42 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC75S102F,LF(CT TC75S102F,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=69107&prodName=TC75S102F Description: IC CMOS 1 CIRCUIT SMV
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 11 mA
Supplier Device Package: SMV
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 630 Hz
Current - Supply: 350nA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.32 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC75S102F,LF(CT TC75S102F,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=69107&prodName=TC75S102F Description: IC CMOS 1 CIRCUIT SMV
Supplier Device Package: SMV
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 630 Hz
Current - Supply: 350nA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 11 mA
Number of Circuits: 1
Part Status: Active
auf Bestellung 6575 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.49 EUR
24+0.89 EUR
29+0.74 EUR
100+0.56 EUR
250+0.48 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K345R,LF SSM3K345R,LF Toshiba Semiconductor and Storage docget.jsp?did=55842&prodName=SSM3K345R Description: MOSFET N-CHANNEL 20V 4A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K345R,LF SSM3K345R,LF Toshiba Semiconductor and Storage docget.jsp?did=55842&prodName=SSM3K345R Description: MOSFET N-CHANNEL 20V 4A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 28933 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.9 EUR
39+0.55 EUR
53+0.39 EUR
100+0.35 EUR
500+0.26 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-Y(TE85L,F) 2SK208-Y(TE85L,F) Toshiba Semiconductor and Storage 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208 Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-Y(TE85L,F) 2SK208-Y(TE85L,F) Toshiba Semiconductor and Storage 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208 Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 4460 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.21 EUR
29+0.74 EUR
50+0.54 EUR
100+0.48 EUR
500+0.36 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-GR(TE85L,F) 2SK208-GR(TE85L,F) Toshiba Semiconductor and Storage 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208 Description: JFET N-CH 50V 6.5MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
9000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-GR(TE85L,F) 2SK208-GR(TE85L,F) Toshiba Semiconductor and Storage 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208 Description: JFET N-CH 50V 6.5MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
auf Bestellung 21491 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.21 EUR
29+0.74 EUR
50+0.54 EUR
100+0.48 EUR
500+0.36 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-O(TE85L,F) 2SK208-O(TE85L,F) Toshiba Semiconductor and Storage 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208 Description: JFET N-CH 50V 6.5MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
9000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-O(TE85L,F) 2SK208-O(TE85L,F) Toshiba Semiconductor and Storage 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208 Description: JFET N-CH 50V 6.5MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
auf Bestellung 32623 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.21 EUR
29+0.74 EUR
50+0.54 EUR
100+0.48 EUR
500+0.36 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-R(TE85L,F) 2SK208-R(TE85L,F) Toshiba Semiconductor and Storage 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208 Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.3 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-R(TE85L,F) 2SK208-R(TE85L,F) Toshiba Semiconductor and Storage 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208 Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
auf Bestellung 14173 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.27 EUR
27+0.8 EUR
50+0.58 EUR
100+0.51 EUR
500+0.38 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE,LF(CT RN4989FE,LF(CT Toshiba Semiconductor and Storage RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.076 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE,LF(CT RN4989FE,LF(CT Toshiba Semiconductor and Storage RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
86+0.25 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.086 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74HC00AFELF TC74HC00AFELF Toshiba Semiconductor and Storage TC74HC00AF_datasheet_en_20140301.pdf?did=6954&prodName=TC74HC00AF Description: IC NAND 4-CIR 2-IN 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Not For New Designs
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC78H653FTG,EL TC78H653FTG,EL Toshiba Semiconductor and Storage TC78H653FTG_datasheet_en_20190404.pdf?did=63589&prodName=TC78H653FTG Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.14 EUR
8000+1.12 EUR
12000+1.11 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC78H653FTG,EL TC78H653FTG,EL Toshiba Semiconductor and Storage TC78H653FTG_datasheet_en_20190404.pdf?did=63589&prodName=TC78H653FTG Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 18628 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.37 EUR
13+1.73 EUR
25+1.56 EUR
100+1.38 EUR
250+1.3 EUR
500+1.25 EUR
1000+1.2 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K361NU,LF SSM6K361NU,LF Toshiba Semiconductor and Storage docget.jsp?did=56023&prodName=SSM6K361NU Description: MOSFET N-CH 100V 3.5A 6UDFNB
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.36 EUR
9000+0.31 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K361NU,LF SSM6K361NU,LF Toshiba Semiconductor and Storage docget.jsp?did=56023&prodName=SSM6K361NU Description: MOSFET N-CH 100V 3.5A 6UDFNB
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 45204 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.51 EUR
23+0.94 EUR
50+0.69 EUR
100+0.61 EUR
500+0.46 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407SRH(TP,E TLP3407SRH(TP,E Toshiba Semiconductor and Storage TLP3407SRH_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407SRH(TP,E TLP3407SRH(TP,E Toshiba Semiconductor and Storage TLP3407SRH_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
auf Bestellung 1599 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.63 EUR
10+9.51 EUR
100+7.69 EUR
500+6.89 EUR
1000+6.79 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407SRL(TP,E TLP3407SRL(TP,E Toshiba Semiconductor and Storage TLP3407SRL_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+6.34 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407SRL(TP,E TLP3407SRL(TP,E Toshiba Semiconductor and Storage TLP3407SRL_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
auf Bestellung 2569 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.63 EUR
10+9.51 EUR
100+7.69 EUR
500+6.89 EUR
1000+6.79 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407S(TP,E TLP3407S(TP,E Toshiba Semiconductor and Storage docget.jsp?did=57212&prodName=TLP3407S Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407S(TP,E TLP3407S(TP,E Toshiba Semiconductor and Storage docget.jsp?did=57212&prodName=TLP3407S Description: SSR RELAY SPST-NO 1A 0-60V
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 4-S-VSON
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.26VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Relay Type: Photo-Coupled Relay (Photorelay)
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2372(TPL,E TLP2372(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=68833&prodName=TLP2372 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP2372(TPL,E TLP2372(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=68833&prodName=TLP2372 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 369 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.61 EUR
10+2.57 EUR
100+1.95 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3553(F) TLP3553(F) Toshiba Semiconductor and Storage TLP3553_datasheet_en_20200325.pdf?did=11945&prodName=TLP3553 Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 3 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.55 EUR
10+4.95 EUR
25+4.72 EUR
50+4.56 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R306P1,L1Q TPH1R306P1,L1Q Toshiba Semiconductor and Storage docget.jsp?did=60310&prodName=TPH1R306P1 Description: MOSFET N-CH 60V 100A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R306P1,L1Q TPH1R306P1,L1Q Toshiba Semiconductor and Storage docget.jsp?did=60310&prodName=TPH1R306P1 Description: MOSFET N-CH 60V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4272 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.28 EUR
10+4.09 EUR
50+3.14 EUR
100+2.83 EUR
500+2.3 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP2631(LF5,F) TLP2631(LF5,F) Toshiba Semiconductor and Storage TLP2631_08-21-17.pdf Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10MBd
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Current - Output / Channel: 16 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 1kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74VHCV245FT docget.jsp?did=15734&prodName=74VHCV245FT
74VHCV245FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOP
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.25 EUR
5000+0.24 EUR
17500+0.23 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74VHCV245FT docget.jsp?did=15734&prodName=74VHCV245FT
74VHCV245FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOP
auf Bestellung 26311 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
50+0.42 EUR
57+0.37 EUR
100+0.32 EUR
250+0.3 EUR
500+0.29 EUR
1000+0.27 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TRS16N65FB,S1F(S
TRS16N65FB,S1F(S
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R70APL,L1Q TPH3R70APL_datasheet_en_20191017.pdf?did=59335&prodName=TPH3R70APL
TPH3R70APL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 90A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.37 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R70APL,L1Q TPH3R70APL_datasheet_en_20191017.pdf?did=59335&prodName=TPH3R70APL
TPH3R70APL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 90A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 12784 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.96 EUR
10+3.2 EUR
50+2.43 EUR
100+2.19 EUR
500+1.75 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPWR6003PL,L1Q docget.jsp?did=36851&prodName=TPWR6003PL
TPWR6003PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+2.49 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPWR6003PL,L1Q docget.jsp?did=36851&prodName=TPWR6003PL
TPWR6003PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 9903 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.31 EUR
10+4.81 EUR
100+3.38 EUR
500+3.05 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1101MFV,L3F(CT RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV
RN1101MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.051 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1101MFV,L3F(CT RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV
RN1101MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 15250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
113+0.19 EUR
182+0.12 EUR
500+0.083 EUR
1000+0.074 EUR
2000+0.064 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1101MFV,L3F RN1101-06MFV_2010-03-07.pdf
RN1101MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2EE24,LM(CT TCR2EE24_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE24
TCR2EE24,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.4V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2EE24,LM(CT TCR2EE24_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE24
TCR2EE24,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.4V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4902,LF(CT RN4902_datasheet_en_20230213.pdf?did=18950&prodName=RN4902
RN4902,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4902,LF(CT RN4902_datasheet_en_20230213.pdf?did=18950&prodName=RN4902
RN4902,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
auf Bestellung 4100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
71+0.3 EUR
114+0.19 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67S179FTG,EL TB67S179FTG_datasheet_en_20151126.pdf?did=35805&prodName=TB67S179FTG
TB67S179FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
Step Resolution: 1 ~ 1/32
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-VQFN (7x7)
Voltage - Load: 10V ~ 60V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+2.61 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67S179FTG,EL TB67S179FTG_datasheet_en_20151126.pdf?did=35805&prodName=TB67S179FTG
TB67S179FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1 ~ 1/32
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-VQFN (7x7)
Voltage - Load: 10V ~ 60V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
auf Bestellung 7249 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.38 EUR
10+4.03 EUR
25+3.7 EUR
100+3.32 EUR
250+3.14 EUR
500+3.03 EUR
1000+2.95 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74ACT240F(EL,F) TC74ACT240F_datasheet_en_20210323.pdf?did=70628&prodName=TC74ACT240F
TC74ACT240F(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF INVERT 5.5V 20SOP
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74ACT240F(EL,F) TC74ACT240F_datasheet_en_20210323.pdf?did=70628&prodName=TC74ACT240F
TC74ACT240F(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF INVERT 5.5V 20SOP
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SB3157DL6X,L
TC7SB3157DL6X,L
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 6MP6D
Supplier Device Package: 6-MP6D (1.45x1)
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 1 x 2:1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SB3157DL6X,L
TC7SB3157DL6X,L
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 6MP6D
Supplier Device Package: 6-MP6D (1.45x1)
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 1 x 2:1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1708JE(TE85L,F) RN1708JE_datasheet_en_20140301.pdf?did=19124&prodName=RN1708JE
RN1708JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1708JE(TE85L,F) RN1708JE_datasheet_en_20140301.pdf?did=19124&prodName=RN1708JE
RN1708JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
34+0.62 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1709JE(TE85L,F) docget.jsp?did=19124&prodName=RN1709JE
RN1709JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1709JE(TE85L,F) docget.jsp?did=19124&prodName=RN1709JE
RN1709JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3773 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
34+0.62 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC6026MFV-Y,L3F docget.jsp?did=6106&prodName=2SC6026MFV
2SC6026MFV-Y,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.049 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC6026MFV-Y,L3F docget.jsp?did=6106&prodName=2SC6026MFV
2SC6026MFV-Y,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 21468 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
114+0.18 EUR
185+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
2000+0.064 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67S141NG docget.jsp?did=15635&prodName=TB67S141NG
TB67S141NG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 24SDIP
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Unipolar
Supplier Device Package: 24-SDIP
Voltage - Load: 10V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.98 EUR
20+5.68 EUR
40+5.37 EUR
100+5.05 EUR
260+4.78 EUR
500+4.64 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7SBL66CFU,LF(CT docget.jsp?did=12377&prodName=TC7SBL66CFU
TC7SBL66CFU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST SINGLE USV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7SBL66CFU,LF(CT docget.jsp?did=12377&prodName=TC7SBL66CFU
TC7SBL66CFU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST SINGLE USV
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
35+0.61 EUR
38+0.55 EUR
100+0.42 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC75S102F,LF(CT docget.jsp?did=69107&prodName=TC75S102F
TC75S102F,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT SMV
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 11 mA
Supplier Device Package: SMV
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 630 Hz
Current - Supply: 350nA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC75S102F,LF(CT docget.jsp?did=69107&prodName=TC75S102F
TC75S102F,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT SMV
Supplier Device Package: SMV
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 630 Hz
Current - Supply: 350nA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 11 mA
Number of Circuits: 1
Part Status: Active
auf Bestellung 6575 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.49 EUR
24+0.89 EUR
29+0.74 EUR
100+0.56 EUR
250+0.48 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K345R,LF docget.jsp?did=55842&prodName=SSM3K345R
SSM3K345R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 20V 4A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K345R,LF docget.jsp?did=55842&prodName=SSM3K345R
SSM3K345R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 20V 4A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 28933 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
39+0.55 EUR
53+0.39 EUR
100+0.35 EUR
500+0.26 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-Y(TE85L,F) 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208
2SK208-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-Y(TE85L,F) 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208
2SK208-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 4460 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.21 EUR
29+0.74 EUR
50+0.54 EUR
100+0.48 EUR
500+0.36 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-GR(TE85L,F) 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208
2SK208-GR(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
9000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-GR(TE85L,F) 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208
2SK208-GR(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
auf Bestellung 21491 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.21 EUR
29+0.74 EUR
50+0.54 EUR
100+0.48 EUR
500+0.36 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-O(TE85L,F) 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208
2SK208-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
9000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-O(TE85L,F) 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208
2SK208-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
auf Bestellung 32623 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.21 EUR
29+0.74 EUR
50+0.54 EUR
100+0.48 EUR
500+0.36 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-R(TE85L,F) 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208
2SK208-R(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SK208-R(TE85L,F) 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208
2SK208-R(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
auf Bestellung 14173 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
27+0.8 EUR
50+0.58 EUR
100+0.51 EUR
500+0.38 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE,LF(CT RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE
RN4989FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.076 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE,LF(CT RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE
RN4989FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
86+0.25 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.086 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74HC00AFELF TC74HC00AF_datasheet_en_20140301.pdf?did=6954&prodName=TC74HC00AF
TC74HC00AFELF
Hersteller: Toshiba Semiconductor and Storage
Description: IC NAND 4-CIR 2-IN 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Not For New Designs
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC78H653FTG,EL TC78H653FTG_datasheet_en_20190404.pdf?did=63589&prodName=TC78H653FTG
TC78H653FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.14 EUR
8000+1.12 EUR
12000+1.11 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC78H653FTG,EL TC78H653FTG_datasheet_en_20190404.pdf?did=63589&prodName=TC78H653FTG
TC78H653FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 18628 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
13+1.73 EUR
25+1.56 EUR
100+1.38 EUR
250+1.3 EUR
500+1.25 EUR
1000+1.2 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K361NU,LF docget.jsp?did=56023&prodName=SSM6K361NU
SSM6K361NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.36 EUR
9000+0.31 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K361NU,LF docget.jsp?did=56023&prodName=SSM6K361NU
SSM6K361NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 45204 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.51 EUR
23+0.94 EUR
50+0.69 EUR
100+0.61 EUR
500+0.46 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407SRH(TP,E TLP3407SRH_Prelim_DS.pdf
TLP3407SRH(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407SRH(TP,E TLP3407SRH_Prelim_DS.pdf
TLP3407SRH(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
auf Bestellung 1599 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.63 EUR
10+9.51 EUR
100+7.69 EUR
500+6.89 EUR
1000+6.79 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407SRL(TP,E TLP3407SRL_Prelim_DS.pdf
TLP3407SRL(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+6.34 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407SRL(TP,E TLP3407SRL_Prelim_DS.pdf
TLP3407SRL(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
auf Bestellung 2569 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.63 EUR
10+9.51 EUR
100+7.69 EUR
500+6.89 EUR
1000+6.79 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407S(TP,E docget.jsp?did=57212&prodName=TLP3407S
TLP3407S(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3407S(TP,E docget.jsp?did=57212&prodName=TLP3407S
TLP3407S(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 4-S-VSON
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.26VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Relay Type: Photo-Coupled Relay (Photorelay)
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2372(TPL,E docget.jsp?did=68833&prodName=TLP2372
TLP2372(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP2372(TPL,E docget.jsp?did=68833&prodName=TLP2372
TLP2372(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 369 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.61 EUR
10+2.57 EUR
100+1.95 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3553(F) TLP3553_datasheet_en_20200325.pdf?did=11945&prodName=TLP3553
TLP3553(F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 3 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.55 EUR
10+4.95 EUR
25+4.72 EUR
50+4.56 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R306P1,L1Q docget.jsp?did=60310&prodName=TPH1R306P1
TPH1R306P1,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R306P1,L1Q docget.jsp?did=60310&prodName=TPH1R306P1
TPH1R306P1,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4272 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.28 EUR
10+4.09 EUR
50+3.14 EUR
100+2.83 EUR
500+2.3 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP2631(LF5,F) TLP2631_08-21-17.pdf
TLP2631(LF5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10MBd
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Current - Output / Channel: 16 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 1kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 137 138 139 140 141 142 143 144 145 146 147 154 176 198 220 227  [ Nächste Seite >> ]