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RN1707,LF RN1707,LF Toshiba Semiconductor and Storage docget.jsp?did=18819&prodName=RN1707 Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 8441 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 48 Stücke
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RN1711,LF RN1711,LF Toshiba Semiconductor and Storage docget.jsp?did=18821&prodName=RN1711 Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.087 EUR
Mindestbestellmenge: 3000 Stücke
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RN1711,LF RN1711,LF Toshiba Semiconductor and Storage docget.jsp?did=18821&prodName=RN1711 Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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RN2702,LF RN2702,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2702 Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
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3000+0.087 EUR
Mindestbestellmenge: 3000 Stücke
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RN2702,LF RN2702,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2702 Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 5838 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 48 Stücke
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RN2708,LF RN2708,LF Toshiba Semiconductor and Storage docget.jsp?did=18903&prodName=RN2708 Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN2708,LF RN2708,LF Toshiba Semiconductor and Storage docget.jsp?did=18903&prodName=RN2708 Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 2987 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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RN2714,LF RN2714,LF Toshiba Semiconductor and Storage RN2714_datasheet_en_20191030.pdf?did=6018&prodName=RN2714 Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Produkt ist nicht verfügbar
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RN2714,LF RN2714,LF Toshiba Semiconductor and Storage RN2714_datasheet_en_20191030.pdf?did=6018&prodName=RN2714 Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Produkt ist nicht verfügbar
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RN1106MFV,L3F(CT RN1106MFV,L3F(CT Toshiba Semiconductor and Storage RN1106MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1106MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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RN1106MFV,L3F(CT RN1106MFV,L3F(CT Toshiba Semiconductor and Storage RN1106MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1106MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 5488 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
113+0.19 EUR
183+0.12 EUR
500+0.083 EUR
1000+0.073 EUR
2000+0.064 EUR
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TCR3DG13,LF TCR3DG13,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.3V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TCR3DG13,LF TCR3DG13,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.3V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCR3DG135,LF TCR3DG135,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.53V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.35V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TCR3DG135,LF TCR3DG135,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.53V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.35V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR2DG13,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TCR2DG13,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR2EE145,LM(CT TCR2EE145,LM(CT Toshiba Semiconductor and Storage TCR2EE145_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE145 Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TCR2EE145,LM(CT TCR2EE145,LM(CT Toshiba Semiconductor and Storage TCR2EE145_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE145 Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Produkt ist nicht verfügbar
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TLP731(D4-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4-GB-TP1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4-BL-TP1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(GR,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4-GB-LF2,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4-BL-LF2,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4-GB-LF4,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(GB-LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4-GR-TP1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4-GB,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(GR-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4-GR-LF1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4-GB-LF1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(GB-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4-LF4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(BL-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(GB,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4GRL-LF2,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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RN1310,LF RN1310,LF Toshiba Semiconductor and Storage datasheet_en_20231102.pdf?did=18781 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN1310,LF RN1310,LF Toshiba Semiconductor and Storage datasheet_en_20231102.pdf?did=18781 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
113+0.19 EUR
182+0.12 EUR
Mindestbestellmenge: 72 Stücke
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RN1311,LF Toshiba Semiconductor and Storage docget.jsp?did=18781&prodName=RN1310 Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
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DF2S16CT,L3F DF2S16CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=888&prodName=DF2S16CT Description: TVS DIODE 12VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
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DF2S16CT,L3F DF2S16CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=888&prodName=DF2S16CT Description: TVS DIODE 12VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
61+0.35 EUR
112+0.19 EUR
500+0.12 EUR
1000+0.079 EUR
2000+0.067 EUR
5000+0.061 EUR
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HN1C03FU-B,LF HN1C03FU-B,LF Toshiba Semiconductor and Storage HN1C03FU_datasheet_en_20140301.pdf?did=19156&prodName=HN1C03FU Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
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3000+0.13 EUR
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9000+0.11 EUR
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HN1C03FU-B,LF HN1C03FU-B,LF Toshiba Semiconductor and Storage HN1C03FU_datasheet_en_20140301.pdf?did=19156&prodName=HN1C03FU Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
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DF3A3.3FV,L3F DF3A3.3FV,L3F Toshiba Semiconductor and Storage Description: TVS DIODE VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.1V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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DF3A3.3FV,L3F DF3A3.3FV,L3F Toshiba Semiconductor and Storage Description: TVS DIODE VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.1V
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 4340 Stücke:
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46+0.46 EUR
55+0.38 EUR
104+0.2 EUR
500+0.13 EUR
1000+0.09 EUR
2000+0.082 EUR
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2SA1182-GR,LF 2SA1182-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19355&prodName=2SA1182 Description: TRANS PNP 30V 0.5A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
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3000+0.1 EUR
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2SA1182-GR,LF 2SA1182-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19355&prodName=2SA1182 Description: TRANS PNP 30V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 10850 Stücke:
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500+0.14 EUR
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74VHC374FT 74VHC374FT Toshiba Semiconductor and Storage docget.jsp?did=15355&prodName=74VHC374FT Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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74VHC374FT 74VHC374FT Toshiba Semiconductor and Storage docget.jsp?did=15355&prodName=74VHC374FT Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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TBD62304APG,HZ TBD62304APG,HZ Toshiba Semiconductor and Storage TBD62304AFNG_datasheet_en_20170324.pdf?did=58116&prodName=TBD62304AFNG Description: IC PWR DRIVER N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 572 Stücke:
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500+2.32 EUR
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TK100S04N1L,LXHQ TK100S04N1L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2000+1.31 EUR
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TK100S04N1L,LXHQ TK100S04N1L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2917 Stücke:
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5+4.41 EUR
10+2.83 EUR
50+2.14 EUR
100+1.93 EUR
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TCK22912G,LF TCK22912G,LF Toshiba Semiconductor and Storage docget.jsp?did=53242&prodName=TCK22912G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Part Status: Active
Fault Protection: Over Temperature, Reverse Current, UVLO
Supplier Device Package: 6-WCSPE (0.80x1.2)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TCK22912G,LF TCK22912G,LF Toshiba Semiconductor and Storage docget.jsp?did=53242&prodName=TCK22912G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Part Status: Active
Fault Protection: Over Temperature, Reverse Current, UVLO
Supplier Device Package: 6-WCSPE (0.80x1.2)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 1364 Stücke:
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14+1.59 EUR
22+1 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
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74VHCT240AFT 74VHCT240AFT Toshiba Semiconductor and Storage docget.jsp?did=14049&prodName=74VHCT240AFT Description: IC BUFFER INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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74VHCT240AFT 74VHCT240AFT Toshiba Semiconductor and Storage docget.jsp?did=14049&prodName=74VHCT240AFT Description: IC BUFFER INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 3604 Stücke:
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32+0.67 EUR
45+0.46 EUR
51+0.42 EUR
100+0.36 EUR
250+0.33 EUR
500+0.32 EUR
1000+0.31 EUR
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RN1707,LF docget.jsp?did=18819&prodName=RN1707
RN1707,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 8441 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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RN1711,LF docget.jsp?did=18821&prodName=RN1711
RN1711,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.087 EUR
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RN1711,LF docget.jsp?did=18821&prodName=RN1711
RN1711,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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RN2702,LF docget.jsp?did=18900&prodName=RN2702
RN2702,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.087 EUR
Mindestbestellmenge: 3000 Stücke
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RN2702,LF docget.jsp?did=18900&prodName=RN2702
RN2702,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 5838 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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RN2708,LF docget.jsp?did=18903&prodName=RN2708
RN2708,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN2708,LF docget.jsp?did=18903&prodName=RN2708
RN2708,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 2987 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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RN2714,LF RN2714_datasheet_en_20191030.pdf?did=6018&prodName=RN2714
RN2714,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Produkt ist nicht verfügbar
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RN2714,LF RN2714_datasheet_en_20191030.pdf?did=6018&prodName=RN2714
RN2714,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Produkt ist nicht verfügbar
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RN1106MFV,L3F(CT RN1106MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1106MFV
RN1106MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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RN1106MFV,L3F(CT RN1106MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1106MFV
RN1106MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 5488 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
113+0.19 EUR
183+0.12 EUR
500+0.083 EUR
1000+0.073 EUR
2000+0.064 EUR
Mindestbestellmenge: 67 Stücke
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TCR3DG13,LF
TCR3DG13,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.3V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR3DG13,LF
TCR3DG13,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.3V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCR3DG135,LF
TCR3DG135,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.53V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.35V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TCR3DG135,LF
TCR3DG135,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.53V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.35V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCR2DG13,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TCR2DG13,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR2EE145,LM(CT TCR2EE145_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE145
TCR2EE145,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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TCR2EE145,LM(CT TCR2EE145_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE145
TCR2EE145,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Produkt ist nicht verfügbar
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TLP731(D4-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4-GB-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4-BL-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(GR,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4-GB-LF2,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4-BL-LF2,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4-GB-LF4,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(GB-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4-GR-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4-GB,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(GR-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4-GR-LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4-GB-LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(GB-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4-LF4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(D4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(BL-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP731(GB,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP731(D4GRL-LF2,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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RN1310,LF datasheet_en_20231102.pdf?did=18781
RN1310,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1310,LF datasheet_en_20231102.pdf?did=18781
RN1310,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
113+0.19 EUR
182+0.12 EUR
Mindestbestellmenge: 72 Stücke
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RN1311,LF docget.jsp?did=18781&prodName=RN1310
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DF2S16CT,L3F docget.jsp?did=888&prodName=DF2S16CT
DF2S16CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.052 EUR
Mindestbestellmenge: 10000 Stücke
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DF2S16CT,L3F docget.jsp?did=888&prodName=DF2S16CT
DF2S16CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
61+0.35 EUR
112+0.19 EUR
500+0.12 EUR
1000+0.079 EUR
2000+0.067 EUR
5000+0.061 EUR
Mindestbestellmenge: 56 Stücke
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HN1C03FU-B,LF HN1C03FU_datasheet_en_20140301.pdf?did=19156&prodName=HN1C03FU
HN1C03FU-B,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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HN1C03FU-B,LF HN1C03FU_datasheet_en_20140301.pdf?did=19156&prodName=HN1C03FU
HN1C03FU-B,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 17543 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
57+0.37 EUR
100+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 35 Stücke
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DF3A3.3FV,L3F
DF3A3.3FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.1V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF3A3.3FV,L3F
DF3A3.3FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.1V
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 4340 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
55+0.38 EUR
104+0.2 EUR
500+0.13 EUR
1000+0.09 EUR
2000+0.082 EUR
Mindestbestellmenge: 46 Stücke
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2SA1182-GR,LF docget.jsp?did=19355&prodName=2SA1182
2SA1182-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
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2SA1182-GR,LF docget.jsp?did=19355&prodName=2SA1182
2SA1182-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 10850 Stücke:
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44+0.48 EUR
70+0.3 EUR
112+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
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74VHC374FT docget.jsp?did=15355&prodName=74VHC374FT
74VHC374FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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74VHC374FT docget.jsp?did=15355&prodName=74VHC374FT
74VHC374FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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TBD62304APG,HZ TBD62304AFNG_datasheet_en_20170324.pdf?did=58116&prodName=TBD62304AFNG
TBD62304APG,HZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 572 Stücke:
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4+6.24 EUR
25+3.5 EUR
100+2.84 EUR
500+2.32 EUR
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TK100S04N1L,LXHQ docget.jsp?did=14004&prodName=TK100S04N1L
TK100S04N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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2000+1.31 EUR
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TK100S04N1L,LXHQ docget.jsp?did=14004&prodName=TK100S04N1L
TK100S04N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2917 Stücke:
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5+4.41 EUR
10+2.83 EUR
50+2.14 EUR
100+1.93 EUR
500+1.54 EUR
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TCK22912G,LF docget.jsp?did=53242&prodName=TCK22912G
TCK22912G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Part Status: Active
Fault Protection: Over Temperature, Reverse Current, UVLO
Supplier Device Package: 6-WCSPE (0.80x1.2)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCK22912G,LF docget.jsp?did=53242&prodName=TCK22912G
TCK22912G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Part Status: Active
Fault Protection: Over Temperature, Reverse Current, UVLO
Supplier Device Package: 6-WCSPE (0.80x1.2)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 1364 Stücke:
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14+1.59 EUR
22+1 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
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74VHCT240AFT docget.jsp?did=14049&prodName=74VHCT240AFT
74VHCT240AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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74VHCT240AFT docget.jsp?did=14049&prodName=74VHCT240AFT
74VHCT240AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 3604 Stücke:
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32+0.67 EUR
45+0.46 EUR
51+0.42 EUR
100+0.36 EUR
250+0.33 EUR
500+0.32 EUR
1000+0.31 EUR
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