Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13613) > Seite 140 nach 227
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TRS8A65F,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE SIL CARBIDE 650V 8A TO220FPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 28pF @ 650V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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TRS8E65F,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE SIL CARB 650V 8A TO220-2LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 28pF @ 650V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HDEPX10GEA51F | Toshiba Semiconductor and Storage |
Description: 16TB SATA NEARLINE 512E Packaging: Bulk |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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MQ01ABF032 | Toshiba Semiconductor and Storage |
Description: 320GB 2.5" SATA III 5V 5.4RPM Packaging: Bulk Size / Dimension: 100.45mm x 69.85mm x 9.50mm Memory Size: 320GB Type: SATA III Weight: 3.26 oz (92.89 g) Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V Form Factor: 2.5" Part Status: Active |
auf Bestellung 338 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7SZ07FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFF 1.65V 5-SSOPPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 5-SSOP Part Status: Active |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7SZ07FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFF 1.65V 5-SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 5-SSOP Part Status: Active |
auf Bestellung 28096 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS516,L3F | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 100V 250MA ESCPackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAS516,L3F | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 100V 250MA ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN4991FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ES6 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4991FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ES6 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1911,LF(CT | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1911,LF(CT | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN4908,LF(CT | Toshiba Semiconductor and Storage |
Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4908,LF(CT | Toshiba Semiconductor and Storage |
Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1707,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1707,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV |
auf Bestellung 8441 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1711,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: USV |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1711,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: USV |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2702,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: USV |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2702,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: USV |
auf Bestellung 5838 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2708,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN2708,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV |
auf Bestellung 2987 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2714,LF | Toshiba Semiconductor and Storage |
Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN2714,LF | Toshiba Semiconductor and Storage |
Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN1106MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN1106MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 5488 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DG13,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.3V 300MA 4WCSPE Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 1.3V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.55V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TCR3DG13,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.3V 300MA 4WCSPE Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 1.3V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.55V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TCR3DG135,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.35V 300MA 4WCSPE Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 1.35V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.53V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TCR3DG135,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.35V 300MA 4WCSPE Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 1.35V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.53V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TCR2DG13,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.3V 200MA 4WCSP Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 70 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP (0.79x0.79) Voltage - Output (Min/Fixed): 1.3V Control Features: Enable Voltage Dropout (Max): 0.7V @ 100mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TCR2DG13,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.3V 200MA 4WCSP Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 70 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP (0.79x0.79) Voltage - Output (Min/Fixed): 1.3V Control Features: Enable Voltage Dropout (Max): 0.7V @ 100mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TCR2EE145,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.45V 200MA ESVPackaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 1.45V Control Features: Enable PSRR: 73dB (1kHz) Protection Features: Over Current |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TCR2EE145,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.45V 200MA ESVPackaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 1.45V Control Features: Enable PSRR: 73dB (1kHz) Protection Features: Over Current |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TLP731(D4-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4-GB-TP1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4-BL-TP1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(GR,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4-GB-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4-BL-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4-GB-LF4,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(GB-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4-GR-TP1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4-GB,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(GR-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4-GR-LF1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4-GB-LF1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(GB-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4-LF4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(BL-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(GB,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP731(D4GRL-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
RN1310,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
RN1310,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| RN1311,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A USM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
DF2S16CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Power Line Protection: No Part Status: Active |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
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|
DF2S16CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Power Line Protection: No Part Status: Active |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TRS8A65F,S1Q |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 28pF @ 650V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 28pF @ 650V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.41 EUR |
| TRS8E65F,S1Q |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 8A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 28pF @ 650V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 8A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 28pF @ 650V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HDEPX10GEA51F |
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1461.26 EUR |
| 10+ | 1382.52 EUR |
| MQ01ABF032 |
Hersteller: Toshiba Semiconductor and Storage
Description: 320GB 2.5" SATA III 5V 5.4RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 320GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
Description: 320GB 2.5" SATA III 5V 5.4RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 320GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 126.76 EUR |
| 10+ | 114.87 EUR |
| 25+ | 110.91 EUR |
| 50+ | 106.96 EUR |
| 100+ | 105.36 EUR |
| TC7SZ07FU,LJ(CT |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 1.65V 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Part Status: Active
Description: IC BUFF 1.65V 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Part Status: Active
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.073 EUR |
| 6000+ | 0.07 EUR |
| 9000+ | 0.069 EUR |
| 15000+ | 0.068 EUR |
| 21000+ | 0.067 EUR |
| TC7SZ07FU,LJ(CT |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 1.65V 5-SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Part Status: Active
Description: IC BUFF 1.65V 5-SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Part Status: Active
auf Bestellung 28096 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.21 EUR |
| 159+ | 0.13 EUR |
| 183+ | 0.11 EUR |
| 217+ | 0.096 EUR |
| 250+ | 0.088 EUR |
| 500+ | 0.082 EUR |
| 1000+ | 0.079 EUR |
| BAS516,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE STANDARD 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS516,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE STANDARD 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN4991FE,LF(CT |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.087 EUR |
| RN4991FE,LF(CT |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 0.46 EUR |
| 76+ | 0.27 EUR |
| 123+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.098 EUR |
| RN1911,LF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.089 EUR |
| RN1911,LF(CT |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| RN4908,LF(CT |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.075 EUR |
| RN4908,LF(CT |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 0.3 EUR |
| 108+ | 0.19 EUR |
| 161+ | 0.13 EUR |
| 500+ | 0.099 EUR |
| 1000+ | 0.089 EUR |
| RN1707,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.087 EUR |
| 6000+ | 0.077 EUR |
| RN1707,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 8441 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 79+ | 0.27 EUR |
| 126+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| RN1711,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.087 EUR |
| RN1711,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 79+ | 0.27 EUR |
| 126+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| RN2702,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.087 EUR |
| RN2702,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 5838 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 79+ | 0.27 EUR |
| 126+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| RN2708,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RN2708,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 2987 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 0.46 EUR |
| 75+ | 0.29 EUR |
| 120+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| RN2714,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN2714,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN1106MFV,L3F(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RN1106MFV,L3F(CT |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 0.31 EUR |
| 113+ | 0.19 EUR |
| 183+ | 0.12 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.073 EUR |
| 2000+ | 0.064 EUR |
| TCR3DG13,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TCR3DG13,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TCR3DG135,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.53V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.53V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TCR3DG135,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.53V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.53V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TCR2DG13,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TCR2DG13,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TCR2EE145,LM(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TCR2EE145,LM(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-GB-TP1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-BL-TP1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(GR,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-GB-LF2,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-BL-LF2,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-GB-LF4,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(GB-LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-GR-TP1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-GB,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(GR-LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-GR-LF1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-GB-LF1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(GB-LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4-LF4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(BL-LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(GB,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP731(D4GRL-LF2,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN1310,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RN1310,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 0.3 EUR |
| 113+ | 0.19 EUR |
| 182+ | 0.12 EUR |
| RN1311,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DF2S16CT,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.052 EUR |
| DF2S16CT,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 61+ | 0.35 EUR |
| 112+ | 0.19 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.079 EUR |
| 2000+ | 0.067 EUR |
| 5000+ | 0.061 EUR |















