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2SK208-R(TE85L,F) 2SK208-R(TE85L,F) Toshiba Semiconductor and Storage 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208 Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
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6000+0.2 EUR
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2SK208-R(TE85L,F) 2SK208-R(TE85L,F) Toshiba Semiconductor and Storage 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208 Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
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500+0.3 EUR
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RN4989FE,LF(CT RN4989FE,LF(CT Toshiba Semiconductor and Storage RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
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RN4989FE,LF(CT RN4989FE,LF(CT Toshiba Semiconductor and Storage RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
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TC74HC00AFELF TC74HC00AFELF Toshiba Semiconductor and Storage TC74HC00AF_datasheet_en_20140301.pdf?did=6954&prodName=TC74HC00AF Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Not For New Designs
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC78H653FTG,EL TC78H653FTG,EL Toshiba Semiconductor and Storage TC78H653FTG_datasheet_en_20190404.pdf?did=63589&prodName=TC78H653FTG Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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TC78H653FTG,EL TC78H653FTG,EL Toshiba Semiconductor and Storage TC78H653FTG_datasheet_en_20190404.pdf?did=63589&prodName=TC78H653FTG Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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250+1.09 EUR
500+1.05 EUR
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SSM6K361NU,LF SSM6K361NU,LF Toshiba Semiconductor and Storage docget.jsp?did=56023&prodName=SSM6K361NU Description: MOSFET N-CH 100V 3.5A 6UDFNB
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Produkt ist nicht verfügbar
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SSM6K361NU,LF SSM6K361NU,LF Toshiba Semiconductor and Storage docget.jsp?did=56023&prodName=SSM6K361NU Description: MOSFET N-CH 100V 3.5A 6UDFNB
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
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TLP3407SRH(TP,E TLP3407SRH(TP,E Toshiba Semiconductor and Storage TLP3407SRH_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Produkt ist nicht verfügbar
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TLP3407SRH(TP,E TLP3407SRH(TP,E Toshiba Semiconductor and Storage TLP3407SRH_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Produkt ist nicht verfügbar
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TLP3407SRL(TP,E TLP3407SRL(TP,E Toshiba Semiconductor and Storage TLP3407SRL_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Produkt ist nicht verfügbar
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TLP3407SRL(TP,E TLP3407SRL(TP,E Toshiba Semiconductor and Storage TLP3407SRL_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
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TLP3407S(TP,E TLP3407S(TP,E Toshiba Semiconductor and Storage docget.jsp?did=57212&prodName=TLP3407S Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
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TLP3407S(TP,E TLP3407S(TP,E Toshiba Semiconductor and Storage docget.jsp?did=57212&prodName=TLP3407S Description: SSR RELAY SPST-NO 1A 0-60V
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 4-S-VSON
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.26VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Relay Type: Photo-Coupled Relay (Photorelay)
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
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TLP2372(TPL,E TLP2372(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=68833&prodName=TLP2372 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
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TLP2372(TPL,E TLP2372(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=68833&prodName=TLP2372 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
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TLP3553(F) TLP3553(F) Toshiba Semiconductor and Storage TLP3553_datasheet_en_20200325.pdf?did=11945&prodName=TLP3553 Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 3 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
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TPH1R306P1,L1Q TPH1R306P1,L1Q Toshiba Semiconductor and Storage docget.jsp?did=60310&prodName=TPH1R306P1 Description: MOSFET N-CH 60V 100A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
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TPH1R306P1,L1Q TPH1R306P1,L1Q Toshiba Semiconductor and Storage docget.jsp?did=60310&prodName=TPH1R306P1 Description: MOSFET N-CH 60V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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TLP2631(LF5,F) TLP2631(LF5,F) Toshiba Semiconductor and Storage TLP2631_08-21-17.pdf Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMD
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10MBd
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Current - Output / Channel: 16 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 1kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SMD
Produkt ist nicht verfügbar
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TLP2631(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP2631(TP5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP2631(MBS,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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7UL1G86FU,LF 7UL1G86FU,LF Toshiba Semiconductor and Storage datasheet_en_20221121.pdf?did=61236 Description: IC GATE XOR 1CH 2-INP 5SSOP
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Produkt ist nicht verfügbar
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7UL1G86FU,LF 7UL1G86FU,LF Toshiba Semiconductor and Storage datasheet_en_20221121.pdf?did=61236 Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 2774 Stücke:
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49+0.36 EUR
60+0.3 EUR
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250+0.18 EUR
500+0.16 EUR
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7UL1G02FU,LF 7UL1G02FU,LF Toshiba Semiconductor and Storage datasheet_en_20221121.pdf?did=60960 Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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7UL1G02FU,LF 7UL1G02FU,LF Toshiba Semiconductor and Storage datasheet_en_20221121.pdf?did=60960 Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 4940 Stücke:
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49+0.36 EUR
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7UL1G08FU,LF 7UL1G08FU,LF Toshiba Semiconductor and Storage Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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7UL1G08FU,LF 7UL1G08FU,LF Toshiba Semiconductor and Storage Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3385 Stücke:
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7UL1G32FU,LF 7UL1G32FU,LF Toshiba Semiconductor and Storage Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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7UL1G32FU,LF 7UL1G32FU,LF Toshiba Semiconductor and Storage Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3410 Stücke:
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7UL1G04FU,LF 7UL1G04FU,LF Toshiba Semiconductor and Storage Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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7UL1G04FU,LF 7UL1G04FU,LF Toshiba Semiconductor and Storage Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 2854 Stücke:
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25+0.72 EUR
33+0.55 EUR
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500+0.23 EUR
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7UL1G34FU,LF 7UL1G34FU,LF Toshiba Semiconductor and Storage docget.jsp?did=61233&prodName=7UL1G34FU Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Produkt ist nicht verfügbar
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7UL1G34FU,LF 7UL1G34FU,LF Toshiba Semiconductor and Storage docget.jsp?did=61233&prodName=7UL1G34FU Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
82+0.22 EUR
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7UL1G04FS,LF 7UL1G04FS,LF Toshiba Semiconductor and Storage 7UL1G04FS_datasheet_en_20221021.pdf?did=61222&prodName=7UL1G04FS Description: IC INVERTER 1CH 1-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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7UL1G04FS,LF 7UL1G04FS,LF Toshiba Semiconductor and Storage 7UL1G04FS_datasheet_en_20221021.pdf?did=61222&prodName=7UL1G04FS Description: IC INVERTER 1CH 1-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 9850 Stücke:
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25+0.72 EUR
33+0.55 EUR
36+0.49 EUR
100+0.34 EUR
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7UL1G126FS,LF 7UL1G126FS,LF Toshiba Semiconductor and Storage 7UL1G126FS_datasheet_en_20220913.pdf?did=61225&prodName=7UL1G126FS Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
auf Bestellung 30000 Stücke:
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10000+0.12 EUR
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7UL1G126FS,LF 7UL1G126FS,LF Toshiba Semiconductor and Storage 7UL1G126FS_datasheet_en_20220913.pdf?did=61225&prodName=7UL1G126FS Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
auf Bestellung 36609 Stücke:
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RN1112MFV,L3F RN1112MFV,L3F Toshiba Semiconductor and Storage RN1112MFV_datasheet_en_20190107.pdf?did=5887&prodName=RN1112MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 8000 Stücke:
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8000+0.036 EUR
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RN1112MFV,L3F RN1112MFV,L3F Toshiba Semiconductor and Storage RN1112MFV_datasheet_en_20190107.pdf?did=5887&prodName=RN1112MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
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RN1113,LF(CT RN1113,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18759&prodName=RN1113 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1113,LF(CT RN1113,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18759&prodName=RN1113 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1112(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18759&prodName=RN1112 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1117(TE85L,F) RN1117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN1117(TE85L,F) RN1117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 898 Stücke:
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56+0.32 EUR
84+0.21 EUR
124+0.14 EUR
500+0.11 EUR
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RN1118(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN1118(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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Lieferzeit 10-14 Tag (e)
28+0.65 EUR
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500+0.19 EUR
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RN1115MFV,L3F RN1115MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1114 Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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RN1114,LF RN1114,LF Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1114 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
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3000+0.06 EUR
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RN1114,LF RN1114,LF Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1114 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
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59+0.3 EUR
97+0.18 EUR
155+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
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XPH4R714MC,L1XHQ XPH4R714MC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=66018&prodName=XPH4R714MC Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
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XPH4R714MC,L1XHQ XPH4R714MC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=66018&prodName=XPH4R714MC Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
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XPH4R10ANB,L1XHQ XPH4R10ANB,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68580&prodName=XPH4R10ANB Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
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XPH4R10ANB,L1XHQ XPH4R10ANB,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68580&prodName=XPH4R10ANB Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
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DF2B7AE,H3F DF2B7AE,H3F Toshiba Semiconductor and Storage DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
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DF2B7AE,H3F DF2B7AE,H3F Toshiba Semiconductor and Storage DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
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TK1K7A60F,S4X TK1K7A60F,S4X Toshiba Semiconductor and Storage TK1K7A60F_datasheet_en_20180925.pdf?did=61565&prodName=TK1K7A60F Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 460µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V
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TCR3RM10A,LF TCR3RM10A,LF Toshiba Semiconductor and Storage TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A Description: IC REG LINEAR 1V 300MA 4DFNC
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.13V @ 300mA
PSRR: 100dB (1kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Produkt ist nicht verfügbar
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2SK208-R(TE85L,F) 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208
2SK208-R(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
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3000+0.22 EUR
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2SK208-R(TE85L,F) 2SK208_datasheet_en_20140301.pdf?did=19660&prodName=2SK208
2SK208-R(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
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18+1 EUR
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100+0.4 EUR
500+0.3 EUR
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RN4989FE,LF(CT RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE
RN4989FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
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4000+0.064 EUR
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RN4989FE,LF(CT RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE
RN4989FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
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53+0.33 EUR
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139+0.13 EUR
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TC74HC00AFELF TC74HC00AF_datasheet_en_20140301.pdf?did=6954&prodName=TC74HC00AF
TC74HC00AFELF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Not For New Designs
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC78H653FTG,EL TC78H653FTG_datasheet_en_20190404.pdf?did=63589&prodName=TC78H653FTG
TC78H653FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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4000+0.96 EUR
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TC78H653FTG,EL TC78H653FTG_datasheet_en_20190404.pdf?did=63589&prodName=TC78H653FTG
TC78H653FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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1000+1.01 EUR
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SSM6K361NU,LF docget.jsp?did=56023&prodName=SSM6K361NU
SSM6K361NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Produkt ist nicht verfügbar
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SSM6K361NU,LF docget.jsp?did=56023&prodName=SSM6K361NU
SSM6K361NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 2324 Stücke:
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17+1.06 EUR
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100+0.42 EUR
500+0.32 EUR
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TLP3407SRH(TP,E TLP3407SRH_Prelim_DS.pdf
TLP3407SRH(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Produkt ist nicht verfügbar
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TLP3407SRH(TP,E TLP3407SRH_Prelim_DS.pdf
TLP3407SRH(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Produkt ist nicht verfügbar
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TLP3407SRL(TP,E TLP3407SRL_Prelim_DS.pdf
TLP3407SRL(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Produkt ist nicht verfügbar
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TLP3407SRL(TP,E TLP3407SRL_Prelim_DS.pdf
TLP3407SRL(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
auf Bestellung 1364 Stücke:
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AnzahlPreis
2+9.29 EUR
10+6.98 EUR
100+5.61 EUR
500+5.12 EUR
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TLP3407S(TP,E docget.jsp?did=57212&prodName=TLP3407S
TLP3407S(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)
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2500+3.7 EUR
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TLP3407S(TP,E docget.jsp?did=57212&prodName=TLP3407S
TLP3407S(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 4-S-VSON
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.26VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Relay Type: Photo-Coupled Relay (Photorelay)
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
auf Bestellung 44343 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.66 EUR
10+5.7 EUR
100+4.55 EUR
500+4.05 EUR
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TLP2372(TPL,E docget.jsp?did=68833&prodName=TLP2372
TLP2372(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+1.12 EUR
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TLP2372(TPL,E docget.jsp?did=68833&prodName=TLP2372
TLP2372(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 4489 Stücke:
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AnzahlPreis
7+2.76 EUR
10+1.97 EUR
100+1.49 EUR
500+1.28 EUR
1000+1.21 EUR
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TLP3553(F) TLP3553_datasheet_en_20200325.pdf?did=11945&prodName=TLP3553
TLP3553(F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 3 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
auf Bestellung 88 Stücke:
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4+4.66 EUR
10+4.16 EUR
25+3.97 EUR
50+3.83 EUR
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TPH1R306P1,L1Q docget.jsp?did=60310&prodName=TPH1R306P1
TPH1R306P1,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
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5000+1.53 EUR
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TPH1R306P1,L1Q docget.jsp?did=60310&prodName=TPH1R306P1
TPH1R306P1,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 9539 Stücke:
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4+4.88 EUR
10+3.17 EUR
100+2.2 EUR
500+1.87 EUR
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TLP2631(LF5,F) TLP2631_08-21-17.pdf
TLP2631(LF5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMD
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10MBd
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Current - Output / Channel: 16 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 1kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SMD
Produkt ist nicht verfügbar
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TLP2631(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP2631(TP5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP2631(MBS,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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7UL1G86FU,LF datasheet_en_20221121.pdf?did=61236
7UL1G86FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Produkt ist nicht verfügbar
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7UL1G86FU,LF datasheet_en_20221121.pdf?did=61236
7UL1G86FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 2774 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
29+0.62 EUR
49+0.36 EUR
60+0.3 EUR
100+0.22 EUR
250+0.18 EUR
500+0.16 EUR
1000+0.14 EUR
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7UL1G02FU,LF datasheet_en_20221121.pdf?did=60960
7UL1G02FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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7UL1G02FU,LF datasheet_en_20221121.pdf?did=60960
7UL1G02FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 4940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
29+0.62 EUR
49+0.36 EUR
60+0.29 EUR
100+0.22 EUR
250+0.18 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 29 Stücke
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7UL1G08FU,LF
7UL1G08FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.11 EUR
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7UL1G08FU,LF
7UL1G08FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3385 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
30+0.6 EUR
40+0.44 EUR
46+0.39 EUR
100+0.25 EUR
250+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 30 Stücke
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7UL1G32FU,LF
7UL1G32FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.11 EUR
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7UL1G32FU,LF
7UL1G32FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3410 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
30+0.6 EUR
40+0.44 EUR
46+0.39 EUR
100+0.25 EUR
250+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
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7UL1G04FU,LF
7UL1G04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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7UL1G04FU,LF
7UL1G04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 2854 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
25+0.72 EUR
33+0.55 EUR
36+0.49 EUR
100+0.34 EUR
250+0.29 EUR
500+0.23 EUR
1000+0.18 EUR
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7UL1G34FU,LF docget.jsp?did=61233&prodName=7UL1G34FU
7UL1G34FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Produkt ist nicht verfügbar
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7UL1G34FU,LF docget.jsp?did=61233&prodName=7UL1G34FU
7UL1G34FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
56+0.32 EUR
82+0.22 EUR
92+0.19 EUR
108+0.16 EUR
250+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 56 Stücke
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7UL1G04FS,LF 7UL1G04FS_datasheet_en_20221021.pdf?did=61222&prodName=7UL1G04FS
7UL1G04FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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7UL1G04FS,LF 7UL1G04FS_datasheet_en_20221021.pdf?did=61222&prodName=7UL1G04FS
7UL1G04FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 9850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
25+0.72 EUR
33+0.55 EUR
36+0.49 EUR
100+0.34 EUR
250+0.29 EUR
500+0.23 EUR
1000+0.18 EUR
2500+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 25 Stücke
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7UL1G126FS,LF 7UL1G126FS_datasheet_en_20220913.pdf?did=61225&prodName=7UL1G126FS
7UL1G126FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.12 EUR
20000+0.11 EUR
Mindestbestellmenge: 10000 Stücke
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7UL1G126FS,LF 7UL1G126FS_datasheet_en_20220913.pdf?did=61225&prodName=7UL1G126FS
7UL1G126FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
auf Bestellung 36609 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
22+0.81 EUR
37+0.48 EUR
45+0.39 EUR
100+0.3 EUR
250+0.25 EUR
500+0.22 EUR
1000+0.19 EUR
2500+0.17 EUR
5000+0.15 EUR
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RN1112MFV,L3F RN1112MFV_datasheet_en_20190107.pdf?did=5887&prodName=RN1112MFV
RN1112MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8000+0.036 EUR
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RN1112MFV,L3F RN1112MFV_datasheet_en_20190107.pdf?did=5887&prodName=RN1112MFV
RN1112MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
112+0.16 EUR
159+0.11 EUR
238+0.074 EUR
500+0.056 EUR
1000+0.05 EUR
2000+0.045 EUR
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RN1113,LF(CT docget.jsp?did=18759&prodName=RN1113
RN1113,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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RN1113,LF(CT docget.jsp?did=18759&prodName=RN1113
RN1113,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
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RN1112(TE85L,F) docget.jsp?did=18759&prodName=RN1112
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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RN1117(TE85L,F) docget.jsp?did=18763&prodName=RN1118
RN1117(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1117(TE85L,F) docget.jsp?did=18763&prodName=RN1118
RN1117(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
56+0.32 EUR
84+0.21 EUR
124+0.14 EUR
500+0.11 EUR
Mindestbestellmenge: 56 Stücke
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RN1118(TE85L,F) docget.jsp?did=18763&prodName=RN1118
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1118(TE85L,F) docget.jsp?did=18763&prodName=RN1118
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
28+0.65 EUR
33+0.54 EUR
100+0.29 EUR
500+0.19 EUR
1000+0.13 EUR
Mindestbestellmenge: 28 Stücke
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RN1115MFV,L3F docget.jsp?did=18763&prodName=RN1114
RN1115MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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RN1114,LF docget.jsp?did=18763&prodName=RN1114
RN1114,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.06 EUR
Mindestbestellmenge: 3000 Stücke
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RN1114,LF docget.jsp?did=18763&prodName=RN1114
RN1114,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
59+0.3 EUR
97+0.18 EUR
155+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
Mindestbestellmenge: 59 Stücke
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XPH4R714MC,L1XHQ docget.jsp?did=66018&prodName=XPH4R714MC
XPH4R714MC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.77 EUR
10000+0.72 EUR
Mindestbestellmenge: 5000 Stücke
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XPH4R714MC,L1XHQ docget.jsp?did=66018&prodName=XPH4R714MC
XPH4R714MC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 11398 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+2.94 EUR
10+1.88 EUR
100+1.26 EUR
500+1 EUR
1000+0.91 EUR
2000+0.86 EUR
Mindestbestellmenge: 6 Stücke
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XPH4R10ANB,L1XHQ docget.jsp?did=68580&prodName=XPH4R10ANB
XPH4R10ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.97 EUR
Mindestbestellmenge: 5000 Stücke
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XPH4R10ANB,L1XHQ docget.jsp?did=68580&prodName=XPH4R10ANB
XPH4R10ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 33237 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.52 EUR
10+2.25 EUR
100+1.53 EUR
500+1.23 EUR
1000+1.19 EUR
Mindestbestellmenge: 5 Stücke
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DF2B7AE,H3F DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE
DF2B7AE,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 76000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.059 EUR
8000+0.053 EUR
12000+0.05 EUR
20000+0.046 EUR
28000+0.044 EUR
40000+0.042 EUR
Mindestbestellmenge: 4000 Stücke
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DF2B7AE,H3F DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE
DF2B7AE,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 81499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
56+0.32 EUR
92+0.19 EUR
150+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
2000+0.067 EUR
Mindestbestellmenge: 56 Stücke
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TK1K7A60F,S4X TK1K7A60F_datasheet_en_20180925.pdf?did=61565&prodName=TK1K7A60F
TK1K7A60F,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 460µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR3RM10A,LF TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A
TCR3RM10A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 300MA 4DFNC
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.13V @ 300mA
PSRR: 100dB (1kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Produkt ist nicht verfügbar
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