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7UL1G126FS,LF 7UL1G126FS,LF Toshiba Semiconductor and Storage 7UL1G126FS_datasheet_en_20220913.pdf?did=61225&prodName=7UL1G126FS Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
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7UL1G126FS,LF 7UL1G126FS,LF Toshiba Semiconductor and Storage 7UL1G126FS_datasheet_en_20220913.pdf?did=61225&prodName=7UL1G126FS Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
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37+0.57 EUR
45+0.46 EUR
100+0.36 EUR
250+0.3 EUR
500+0.26 EUR
1000+0.23 EUR
2500+0.2 EUR
5000+0.18 EUR
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RN1112MFV,L3F RN1112MFV,L3F Toshiba Semiconductor and Storage RN1112MFV_datasheet_en_20190107.pdf?did=5887&prodName=RN1112MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
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RN1112MFV,L3F RN1112MFV,L3F Toshiba Semiconductor and Storage RN1112MFV_datasheet_en_20190107.pdf?did=5887&prodName=RN1112MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 8000 Stücke:
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159+0.13 EUR
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500+0.067 EUR
1000+0.06 EUR
2000+0.054 EUR
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RN1113,LF(CT RN1113,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18759&prodName=RN1113 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1113,LF(CT RN1113,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18759&prodName=RN1113 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1112(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18759&prodName=RN1112 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1117(TE85L,F) RN1117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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RN1117(TE85L,F) RN1117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 898 Stücke:
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84+0.25 EUR
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RN1118(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1118(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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33+0.64 EUR
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500+0.23 EUR
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RN1115MFV,L3F RN1115MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1114 Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN1114,LF RN1114,LF Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1114 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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3000+0.071 EUR
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RN1114,LF RN1114,LF Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1114 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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59+0.36 EUR
97+0.21 EUR
155+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
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XPH4R714MC,L1XHQ XPH4R714MC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=66018&prodName=XPH4R714MC Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
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XPH4R714MC,L1XHQ XPH4R714MC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=66018&prodName=XPH4R714MC Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 11168 Stücke:
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6+3.88 EUR
10+2.48 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.21 EUR
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XPH4R10ANB,L1XHQ XPH4R10ANB,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68580&prodName=XPH4R10ANB Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
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5000+1.34 EUR
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XPH4R10ANB,L1XHQ XPH4R10ANB,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68580&prodName=XPH4R10ANB Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 32917 Stücke:
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500+1.71 EUR
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DF2B7AE,H3F DF2B7AE,H3F Toshiba Semiconductor and Storage DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 76000 Stücke:
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8000+0.069 EUR
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DF2B7AE,H3F DF2B7AE,H3F Toshiba Semiconductor and Storage DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 81149 Stücke:
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86+0.25 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.086 EUR
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TK1K7A60F,S4X TK1K7A60F,S4X Toshiba Semiconductor and Storage TK1K7A60F_datasheet_en_20180925.pdf?did=61565&prodName=TK1K7A60F Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 460µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V
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TCR3RM10A,LF TCR3RM10A,LF Toshiba Semiconductor and Storage TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A Description: IC REG LINEAR 1V 300MA 4DFNC
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.13V @ 300mA
PSRR: 100dB (1kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Produkt ist nicht verfügbar
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TCR3RM10A,LF TCR3RM10A,LF Toshiba Semiconductor and Storage TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A Description: IC REG LINEAR 1V 300MA 4DFNC
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.13V @ 300mA
PSRR: 100dB (1kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM6N68NU,LF SSM6N68NU,LF Toshiba Semiconductor and Storage docget.jsp?did=60465&prodName=SSM6N68NU Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.29 EUR
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SSM6N68NU,LF SSM6N68NU,LF Toshiba Semiconductor and Storage docget.jsp?did=60465&prodName=SSM6N68NU Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
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28+0.76 EUR
100+0.49 EUR
500+0.37 EUR
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TRS20N65FB,S1Q TRS20N65FB,S1Q Toshiba Semiconductor and Storage datasheet_en_20200703.pdf?did=69237 Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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TCR3DF25,LM(CT TCR3DF25,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 2.5V 300MA SMV
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.31V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR3DF25,LM(CT TCR3DF25,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 2.5V 300MA SMV
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.31V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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TB9058FNG,EL TB9058FNG,EL Toshiba Semiconductor and Storage TB9058FNG_datasheet_en_20190222.pdf?did=65358&prodName=TB9058FNG Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Voltage - Load: 0.5V ~ 12V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TB9058FNG,EL TB9058FNG,EL Toshiba Semiconductor and Storage TB9058FNG_datasheet_en_20190222.pdf?did=65358&prodName=TB9058FNG Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Voltage - Load: 0.5V ~ 12V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TC75S101FU(TE85L,F TC75S101FU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=11316&prodName=TC75S101F Description: IC OPAMP GP 1 CIRCUIT 5SSOP
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TRS12A65F,S1Q TRS12A65F,S1Q Toshiba Semiconductor and Storage docget.jsp?did=66028&prodName=TRS12A65F Description: DIODE SIL CARB 650V 12A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 44pF @ 650V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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1SV305,L3F 1SV305,L3F Toshiba Semiconductor and Storage docget.jsp?did=2830&prodName=1SV305 Description: DIODE VARACTOR 10V SINGLE ESC
Capacitance Ratio: 3.0
Voltage - Peak Reverse (Max): 10 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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1SV305,L3F 1SV305,L3F Toshiba Semiconductor and Storage docget.jsp?did=2830&prodName=1SV305 Description: DIODE VARACTOR 10V SINGLE ESC
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Capacitance Ratio Condition: C1/C4
Capacitance Ratio: 3.0
Voltage - Peak Reverse (Max): 10 V
Supplier Device Package: ESC
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TLP2372(V4-TPL,E TLP2372(V4-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=68833&prodName=TLP2372 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Produkt ist nicht verfügbar
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TLP2372(V4-TPL,E TLP2372(V4-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=68833&prodName=TLP2372 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
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2SK3074TE12LF 2SK3074TE12LF Toshiba Semiconductor and Storage docget.jsp?did=17914&prodName=2SK3074 Description: MOSF RF N CH 30V 1A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 630mW
Gain: 14.9dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-62
Voltage - Rated: 30 V
Voltage - Test: 9.6 V
Current - Test: 50 mA
Produkt ist nicht verfügbar
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74VHC9164FT 74VHC9164FT Toshiba Semiconductor and Storage docget.jsp?did=15655&prodName=74VHC9164FT Description: X34 PB-F 8-BIT SHIFT REGISTER (P
Number of Bits per Element: 8
Supplier Device Package: 16-TSSOPB
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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74VHC9164FT 74VHC9164FT Toshiba Semiconductor and Storage docget.jsp?did=15655&prodName=74VHC9164FT Description: X34 PB-F 8-BIT SHIFT REGISTER (P
Number of Bits per Element: 8
Supplier Device Package: 16-TSSOPB
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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TPH1R104PB,L1XHQ TPH1R104PB,L1XHQ Toshiba Semiconductor and Storage TPH1R104PB_datasheet_en_20200624.pdf?did=60946&prodName=TPH1R104PB Description: MOSFET N-CH 40V 120A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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TPH1R104PB,L1XHQ TPH1R104PB,L1XHQ Toshiba Semiconductor and Storage TPH1R104PB_datasheet_en_20200624.pdf?did=60946&prodName=TPH1R104PB Description: MOSFET N-CH 40V 120A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
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TPH1R204PB,L1Q TPH1R204PB,L1Q Toshiba Semiconductor and Storage docget.jsp?did=57107&prodName=TPH1R204PB Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
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TPH1R204PB,L1Q TPH1R204PB,L1Q Toshiba Semiconductor and Storage docget.jsp?did=57107&prodName=TPH1R204PB Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
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TRS20N65FB,S1F(S TRS20N65FB,S1F(S Toshiba Semiconductor and Storage Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TLP183(BL-TPR,E TLP183(BL-TPR,E Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SOP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP523-2(SANYD,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP750(D4-SANYD,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-4(SANYD,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP781F(D4ADGBT7,F Toshiba Semiconductor and Storage TLP781%28F%29.pdf Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP3320(TP15,F TLP3320(TP15,F Toshiba Semiconductor and Storage TLP3320_datasheet_en_20230620.pdf?did=14605&prodName=TLP3320 Description: SSR RELAY SPST-NO 100MA 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Load Current: 100 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 14 Ohms
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TLP3320(TP15,F TLP3320(TP15,F Toshiba Semiconductor and Storage TLP3320_datasheet_en_20230620.pdf?did=14605&prodName=TLP3320 Description: SSR RELAY SPST-NO 100MA 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Load Current: 100 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 14 Ohms
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TRS2E65F,S1Q TRS2E65F,S1Q Toshiba Semiconductor and Storage TRS3E65FProductNewsen20171101.pdf Description: DIODE SIL CARB 650V 2A TO220-2L
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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TRS3E65F,S1Q TRS3E65F,S1Q Toshiba Semiconductor and Storage TRS3E65FProductNewsen20171101.pdf Description: DIODE SIL CARB 650V 3A TO220-2L
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 12pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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TRS4E65F,S1Q TRS4E65F,S1Q Toshiba Semiconductor and Storage datasheet_en_20180627.pdf?did=53515 Description: DIODE SIL CARB 650V 4A TO220-2L
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 16pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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TRS6E65F,S1Q TRS6E65F,S1Q Toshiba Semiconductor and Storage TRS6E65F_datasheet_en_20180627.pdf?did=53517&prodName=TRS6E65F Description: DIODE SIL CARB 650V 6A TO220-2L
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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TRS10E65F,S1Q TRS10E65F,S1Q Toshiba Semiconductor and Storage TRS10E65F_datasheet_en_20180627.pdf?did=53513&prodName=TRS10E65F Description: DIODE SIL CARB 650V 10A TO220-2L
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 36pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar
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TRS12E65F,S1Q TRS12E65F,S1Q Toshiba Semiconductor and Storage Description: DIODE SIL CARB 650V 12A TO220-2L
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 65pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Produkt ist nicht verfügbar
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TLP785F(Y-LF7,F TLP785F(Y-LF7,F Toshiba Semiconductor and Storage TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TC7SH08FU,LJ(CT TC7SH08FU,LJ(CT Toshiba Semiconductor and Storage TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 33000 Stücke:
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6000+0.073 EUR
9000+0.071 EUR
15000+0.07 EUR
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TC7SH08FU,LJ(CT TC7SH08FU,LJ(CT Toshiba Semiconductor and Storage TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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154+0.13 EUR
177+0.12 EUR
209+0.1 EUR
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7UL1G126FS,LF 7UL1G126FS_datasheet_en_20220913.pdf?did=61225&prodName=7UL1G126FS
7UL1G126FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
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7UL1G126FS,LF 7UL1G126FS_datasheet_en_20220913.pdf?did=61225&prodName=7UL1G126FS
7UL1G126FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
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22+0.96 EUR
37+0.57 EUR
45+0.46 EUR
100+0.36 EUR
250+0.3 EUR
500+0.26 EUR
1000+0.23 EUR
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RN1112MFV,L3F RN1112MFV_datasheet_en_20190107.pdf?did=5887&prodName=RN1112MFV
RN1112MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 8000 Stücke:
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8000+0.043 EUR
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RN1112MFV,L3F RN1112MFV_datasheet_en_20190107.pdf?did=5887&prodName=RN1112MFV
RN1112MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 8000 Stücke:
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112+0.19 EUR
159+0.13 EUR
238+0.088 EUR
500+0.067 EUR
1000+0.06 EUR
2000+0.054 EUR
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RN1113,LF(CT docget.jsp?did=18759&prodName=RN1113
RN1113,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1113,LF(CT docget.jsp?did=18759&prodName=RN1113
RN1113,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1112(TE85L,F) docget.jsp?did=18759&prodName=RN1112
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
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RN1117(TE85L,F) docget.jsp?did=18763&prodName=RN1118
RN1117(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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RN1117(TE85L,F) docget.jsp?did=18763&prodName=RN1118
RN1117(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 898 Stücke:
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56+0.38 EUR
84+0.25 EUR
124+0.17 EUR
500+0.13 EUR
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RN1118(TE85L,F) docget.jsp?did=18763&prodName=RN1118
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN1118(TE85L,F) docget.jsp?did=18763&prodName=RN1118
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 2970 Stücke:
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28+0.77 EUR
33+0.64 EUR
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RN1115MFV,L3F docget.jsp?did=18763&prodName=RN1114
RN1115MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN1114,LF docget.jsp?did=18763&prodName=RN1114
RN1114,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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3000+0.071 EUR
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RN1114,LF docget.jsp?did=18763&prodName=RN1114
RN1114,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
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59+0.36 EUR
97+0.21 EUR
155+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
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XPH4R714MC,L1XHQ docget.jsp?did=66018&prodName=XPH4R714MC
XPH4R714MC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
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5000+1.02 EUR
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XPH4R714MC,L1XHQ docget.jsp?did=66018&prodName=XPH4R714MC
XPH4R714MC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 11168 Stücke:
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6+3.88 EUR
10+2.48 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.21 EUR
2000+1.15 EUR
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XPH4R10ANB,L1XHQ docget.jsp?did=68580&prodName=XPH4R10ANB
XPH4R10ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
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5000+1.34 EUR
10000+1.3 EUR
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XPH4R10ANB,L1XHQ docget.jsp?did=68580&prodName=XPH4R10ANB
XPH4R10ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 32917 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.86 EUR
10+3.13 EUR
100+2.14 EUR
500+1.71 EUR
1000+1.58 EUR
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DF2B7AE,H3F DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE
DF2B7AE,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 76000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.076 EUR
8000+0.069 EUR
12000+0.064 EUR
20000+0.06 EUR
28000+0.057 EUR
40000+0.055 EUR
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DF2B7AE,H3F DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE
DF2B7AE,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 81149 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
86+0.25 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.086 EUR
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TK1K7A60F,S4X TK1K7A60F_datasheet_en_20180925.pdf?did=61565&prodName=TK1K7A60F
TK1K7A60F,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 460µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V
auf Bestellung 1 Stücke:
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TCR3RM10A,LF TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A
TCR3RM10A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 300MA 4DFNC
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.13V @ 300mA
PSRR: 100dB (1kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Produkt ist nicht verfügbar
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TCR3RM10A,LF TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A
TCR3RM10A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 300MA 4DFNC
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.13V @ 300mA
PSRR: 100dB (1kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM6N68NU,LF docget.jsp?did=60465&prodName=SSM6N68NU
SSM6N68NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
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SSM6N68NU,LF docget.jsp?did=60465&prodName=SSM6N68NU
SSM6N68NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 5055 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
28+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
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TRS20N65FB,S1Q datasheet_en_20200703.pdf?did=69237
TRS20N65FB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 240 Stücke:
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2+11.29 EUR
30+6.38 EUR
120+5.3 EUR
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TCR3DF25,LM(CT
TCR3DF25,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 300MA SMV
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.31V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR3DF25,LM(CT
TCR3DF25,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 300MA SMV
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.31V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 2406 Stücke:
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67+0.31 EUR
98+0.21 EUR
111+0.19 EUR
131+0.17 EUR
250+0.14 EUR
1000+0.13 EUR
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TB9058FNG,EL TB9058FNG_datasheet_en_20190222.pdf?did=65358&prodName=TB9058FNG
TB9058FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Voltage - Load: 0.5V ~ 12V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TB9058FNG,EL TB9058FNG_datasheet_en_20190222.pdf?did=65358&prodName=TB9058FNG
TB9058FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Voltage - Load: 0.5V ~ 12V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 459 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.34 EUR
10+10.28 EUR
25+9.52 EUR
100+8.69 EUR
250+8.43 EUR
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TC75S101FU(TE85L,F docget.jsp?did=11316&prodName=TC75S101F
TC75S101FU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Produkt ist nicht verfügbar
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TRS12A65F,S1Q docget.jsp?did=66028&prodName=TRS12A65F
TRS12A65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 12A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 44pF @ 650V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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1SV305,L3F docget.jsp?did=2830&prodName=1SV305
1SV305,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V SINGLE ESC
Capacitance Ratio: 3.0
Voltage - Peak Reverse (Max): 10 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
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8000+0.13 EUR
16000+0.12 EUR
24000+0.12 EUR
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1SV305,L3F docget.jsp?did=2830&prodName=1SV305
1SV305,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V SINGLE ESC
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Capacitance Ratio Condition: C1/C4
Capacitance Ratio: 3.0
Voltage - Peak Reverse (Max): 10 V
Supplier Device Package: ESC
auf Bestellung 28580 Stücke:
Lieferzeit 10-14 Tag (e)
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29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.17 EUR
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TLP2372(V4-TPL,E docget.jsp?did=68833&prodName=TLP2372
TLP2372(V4-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Produkt ist nicht verfügbar
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TLP2372(V4-TPL,E docget.jsp?did=68833&prodName=TLP2372
TLP2372(V4-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 1286 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.28 EUR
10+2.34 EUR
100+1.77 EUR
500+1.52 EUR
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2SK3074TE12LF docget.jsp?did=17914&prodName=2SK3074
2SK3074TE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 30V 1A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 630mW
Gain: 14.9dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-62
Voltage - Rated: 30 V
Voltage - Test: 9.6 V
Current - Test: 50 mA
Produkt ist nicht verfügbar
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74VHC9164FT docget.jsp?did=15655&prodName=74VHC9164FT
74VHC9164FT
Hersteller: Toshiba Semiconductor and Storage
Description: X34 PB-F 8-BIT SHIFT REGISTER (P
Number of Bits per Element: 8
Supplier Device Package: 16-TSSOPB
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+0.24 EUR
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74VHC9164FT docget.jsp?did=15655&prodName=74VHC9164FT
74VHC9164FT
Hersteller: Toshiba Semiconductor and Storage
Description: X34 PB-F 8-BIT SHIFT REGISTER (P
Number of Bits per Element: 8
Supplier Device Package: 16-TSSOPB
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4550 Stücke:
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AnzahlPrivatkunde
19+1.15 EUR
32+0.68 EUR
38+0.56 EUR
100+0.42 EUR
250+0.35 EUR
500+0.31 EUR
1000+0.27 EUR
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TPH1R104PB,L1XHQ TPH1R104PB_datasheet_en_20200624.pdf?did=60946&prodName=TPH1R104PB
TPH1R104PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.52 EUR
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TPH1R104PB,L1XHQ TPH1R104PB_datasheet_en_20200624.pdf?did=60946&prodName=TPH1R104PB
TPH1R104PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
auf Bestellung 5098 Stücke:
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5+5.09 EUR
10+2.82 EUR
100+1.92 EUR
500+1.86 EUR
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TPH1R204PB,L1Q docget.jsp?did=57107&prodName=TPH1R204PB
TPH1R204PB,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1 EUR
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TPH1R204PB,L1Q docget.jsp?did=57107&prodName=TPH1R204PB
TPH1R204PB,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
auf Bestellung 40000 Stücke:
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AnzahlPrivatkunde
6+3.77 EUR
10+2.4 EUR
100+1.63 EUR
500+1.3 EUR
1000+1.23 EUR
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TRS20N65FB,S1F(S
TRS20N65FB,S1F(S
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TLP183(BL-TPR,E
TLP183(BL-TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SOP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP523-2(SANYD,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP750(D4-SANYD,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-4(SANYD,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP781F(D4ADGBT7,F TLP781%28F%29.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP3320(TP15,F TLP3320_datasheet_en_20230620.pdf?did=14605&prodName=TLP3320
TLP3320(TP15,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 100MA 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Load Current: 100 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 14 Ohms
auf Bestellung 25667 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+3.69 EUR
3000+3.56 EUR
4500+3.49 EUR
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TLP3320(TP15,F TLP3320_datasheet_en_20230620.pdf?did=14605&prodName=TLP3320
TLP3320(TP15,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 100MA 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Load Current: 100 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 14 Ohms
auf Bestellung 25667 Stücke:
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3+7.69 EUR
10+5.66 EUR
100+4.46 EUR
500+3.94 EUR
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TRS2E65F,S1Q TRS3E65FProductNewsen20171101.pdf
TRS2E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 2A TO220-2L
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.52 EUR
50+1.69 EUR
Mindestbestellmenge: 6 Stücke
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TRS3E65F,S1Q TRS3E65FProductNewsen20171101.pdf
TRS3E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 3A TO220-2L
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 12pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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TRS4E65F,S1Q datasheet_en_20180627.pdf?did=53515
TRS4E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 4A TO220-2L
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 16pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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TRS6E65F,S1Q TRS6E65F_datasheet_en_20180627.pdf?did=53517&prodName=TRS6E65F
TRS6E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 6A TO220-2L
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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TRS10E65F,S1Q TRS10E65F_datasheet_en_20180627.pdf?did=53513&prodName=TRS10E65F
TRS10E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 10A TO220-2L
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 36pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar
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TRS12E65F,S1Q
TRS12E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 12A TO220-2L
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 65pF @ 650V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Produkt ist nicht verfügbar
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TLP785F(Y-LF7,F TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F
TLP785F(Y-LF7,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TC7SH08FU,LJ(CT TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU
TC7SH08FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.076 EUR
6000+0.073 EUR
9000+0.071 EUR
15000+0.07 EUR
21000+0.069 EUR
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TC7SH08FU,LJ(CT TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU
TC7SH08FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 34005 Stücke:
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AnzahlPrivatkunde
100+0.21 EUR
154+0.13 EUR
177+0.12 EUR
209+0.1 EUR
250+0.092 EUR
500+0.086 EUR
1000+0.081 EUR
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