Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13435) > Seite 147 nach 224

Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 142 143 144 145 146 147 148 149 150 151 152 154 176 198 220 224  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TRS12E65F,S1Q TRS12E65F,S1Q Toshiba Semiconductor and Storage Description: DIODE SIL CARB 650V 12A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 65pF @ 650V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP785F(Y-LF7,F TLP785F(Y-LF7,F Toshiba Semiconductor and Storage TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F Description: PHOTOCOUPLER TRANS OUT
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SH08FU,LJ(CT TC7SH08FU,LJ(CT Toshiba Semiconductor and Storage TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.06 EUR
6000+0.06 EUR
9000+0.06 EUR
15000+0.06 EUR
21000+0.06 EUR
30000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TC7SH08FU,LJ(CT TC7SH08FU,LJ(CT Toshiba Semiconductor and Storage TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 40274 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
157+0.11 EUR
180+0.10 EUR
213+0.08 EUR
250+0.08 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
TC7S08F,LF TC7S08F,LF Toshiba Semiconductor and Storage docget.jsp?did=20179&prodName=TC7S08F Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TC7S08F,LF TC7S08F,LF Toshiba Semiconductor and Storage docget.jsp?did=20179&prodName=TC7S08F Description: IC GATE AND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 6786 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
104+0.17 EUR
118+0.15 EUR
139+0.13 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N951L,EFF SSM6N951L,EFF Toshiba Semiconductor and Storage catalog20200115.pdf Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N951L,EFF SSM6N951L,EFF Toshiba Semiconductor and Storage catalog20200115.pdf Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R104PB,L1XHQ TPW1R104PB,L1XHQ Toshiba Semiconductor and Storage TPW1R104PB_datasheet_en_20200624.pdf?did=62007&prodName=TPW1R104PB Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.07 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R104PB,L1XHQ TPW1R104PB,L1XHQ Toshiba Semiconductor and Storage TPW1R104PB_datasheet_en_20200624.pdf?did=62007&prodName=TPW1R104PB Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
auf Bestellung 24500 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.75 EUR
10+2.40 EUR
100+1.63 EUR
500+1.31 EUR
1000+1.20 EUR
2000+1.11 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TPHR7904PB,L1XHQ TPHR7904PB,L1XHQ Toshiba Semiconductor and Storage TPHR7904PB_datasheet_en_20200624.pdf?did=60944&prodName=TPHR7904PB Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.92 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPHR7904PB,L1XHQ TPHR7904PB,L1XHQ Toshiba Semiconductor and Storage TPHR7904PB_datasheet_en_20200624.pdf?did=60944&prodName=TPHR7904PB Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13720 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.74 EUR
10+3.75 EUR
100+2.62 EUR
500+2.13 EUR
1000+1.98 EUR
2000+1.92 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TPWR7904PB,L1XHQ TPWR7904PB,L1XHQ Toshiba Semiconductor and Storage TPWR7904PB_datasheet_en_20200624.pdf?did=62009&prodName=TPWR7904PB Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.37 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPWR7904PB,L1XHQ TPWR7904PB,L1XHQ Toshiba Semiconductor and Storage TPWR7904PB_datasheet_en_20200624.pdf?did=62009&prodName=TPWR7904PB Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6809 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.51 EUR
10+2.90 EUR
100+2.00 EUR
500+1.61 EUR
1000+1.48 EUR
2000+1.38 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N67NU,LF SSM6N67NU,LF Toshiba Semiconductor and Storage SSM6N67NU_datasheet_en_20171218.pdf?did=60461&prodName=SSM6N67NU Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
6000+0.20 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N67NU,LF SSM6N67NU,LF Toshiba Semiconductor and Storage SSM6N67NU_datasheet_en_20171218.pdf?did=60461&prodName=SSM6N67NU Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 16314 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
30+0.60 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N17FU(TE85L,F) SSM6N17FU(TE85L,F) Toshiba Semiconductor and Storage SSM6N17FU_datasheet_en_20140301.pdf?did=19758&prodName=SSM6N17FU Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N17FU(TE85L,F) SSM6N17FU(TE85L,F) Toshiba Semiconductor and Storage SSM6N17FU_datasheet_en_20140301.pdf?did=19758&prodName=SSM6N17FU Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N36TU,LF SSM6N36TU,LF Toshiba Semiconductor and Storage Description: MOSFET 2N-CH 20V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N36TU,LF SSM6N36TU,LF Toshiba Semiconductor and Storage Description: MOSFET 2N-CH 20V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 11607 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
39+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N24TU,LF SSM6N24TU,LF Toshiba Semiconductor and Storage SSM6N24TU_datasheet_en_20140301.pdf?did=22360&prodName=SSM6N24TU Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N24TU,LF SSM6N24TU,LF Toshiba Semiconductor and Storage SSM6N24TU_datasheet_en_20140301.pdf?did=22360&prodName=SSM6N24TU Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
32+0.56 EUR
100+0.34 EUR
500+0.31 EUR
1000+0.21 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
TRS4A65F,S1Q TRS4A65F,S1Q Toshiba Semiconductor and Storage Description: PB-F DIODE TO-220-2L V=650 IF=4A
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TB9052FNG(EL) Toshiba Semiconductor and Storage docget.jsp?did=15592&prodName=TB9052FNG Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB9052FNG(EL) Toshiba Semiconductor and Storage docget.jsp?did=15592&prodName=TB9052FNG Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H660FNG,EL TC78H660FNG,EL Toshiba Semiconductor and Storage TC78H660FNG_datasheet_en_20200908.pdf?did=69605&prodName=TC78H660FNG Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H660FNG,EL TC78H660FNG,EL Toshiba Semiconductor and Storage TC78H660FNG_datasheet_en_20200908.pdf?did=69605&prodName=TC78H660FNG Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 3784 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
15+1.23 EUR
25+1.11 EUR
100+0.98 EUR
250+0.92 EUR
500+0.88 EUR
1000+0.85 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-GR,LF TTC1949-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=61219&prodName=TTC1949 Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-GR,LF TTC1949-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=61219&prodName=TTC1949 Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 5996 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-Y,LF TTC1949-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=61219&prodName=TTC1949 Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-Y,LF TTC1949-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=61219&prodName=TTC1949 Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN2707,LF RN2707,LF Toshiba Semiconductor and Storage RN2707_datasheet_en_20191029.pdf?did=18903&prodName=RN2707 Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2707,LF RN2707,LF Toshiba Semiconductor and Storage RN2707_datasheet_en_20191029.pdf?did=18903&prodName=RN2707 Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE(TE85L,F) Toshiba Semiconductor and Storage RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE(TE85L,F) Toshiba Semiconductor and Storage RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.20 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
TK155A65Z,S4X TK155A65Z,S4X Toshiba Semiconductor and Storage docget.jsp?did=67744&prodName=TK155A65Z Description: MOSFET N-CH 650V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.92 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK200F04N1L,LXGQ TK200F04N1L,LXGQ Toshiba Semiconductor and Storage docget.jsp?did=15454&prodName=TK200F04N1L Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.48 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
TK200F04N1L,LXGQ TK200F04N1L,LXGQ Toshiba Semiconductor and Storage docget.jsp?did=15454&prodName=TK200F04N1L Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1016 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.32 EUR
10+4.28 EUR
100+3.25 EUR
500+3.03 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK20E60W5,S1VX TK20E60W5,S1VX Toshiba Semiconductor and Storage TK20E60W5_datasheet_en_20151022.pdf?did=14970&prodName=TK20E60W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK20J60W,S1VE TK20J60W,S1VE Toshiba Semiconductor and Storage TK20J60W_datasheet_en_20131226.pdf?did=13896&prodName=TK20J60W Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.23 EUR
25+5.91 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLP3123(D4,F TLP3123(D4,F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 1A 0-40V
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 100 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP3123(D4,TP,F TLP3123(D4,TP,F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 1A 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 100 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK1K9A60F,S4X TK1K9A60F,S4X Toshiba Semiconductor and Storage docget.jsp?did=59768&prodName=TK1K9A60F Description: MOSFET N-CH 600V 3.7A TO220SIS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TBAT54,LM TBAT54,LM Toshiba Semiconductor and Storage TBAT54_datasheet_en_20171117.pdf?did=37137&prodName=TBAT54 Description: DIODE SCHOTTKY 30V 140MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Current - Average Rectified (Io): 140mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA1588-GR,LF 2SA1588-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19174&prodName=2SA1588 Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF2B20M4SL,L3F DF2B20M4SL,L3F Toshiba Semiconductor and Storage DF2B20M4SL_datasheet_en_20180110.pdf?did=55277&prodName=DF2B20M4SL Description: TVS DIODE 18.5VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 15W
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.06 EUR
20000+0.05 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DF2B20M4SL,L3F DF2B20M4SL,L3F Toshiba Semiconductor and Storage DF2B20M4SL_datasheet_en_20180110.pdf?did=55277&prodName=DF2B20M4SL Description: TVS DIODE 18.5VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 15W
Power Line Protection: No
auf Bestellung 31329 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
87+0.20 EUR
201+0.09 EUR
500+0.08 EUR
1000+0.08 EUR
2000+0.08 EUR
5000+0.07 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
TC7SET126F,LJ(CT TC7SET126F,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=659&prodName=TC7SET126F Description: IC BUFFER NON-INVERT 5.5V SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SET126F,LJ(CT TC7SET126F,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=659&prodName=TC7SET126F Description: IC BUFFER NON-INVERT 5.5V SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP197A(F) Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 400 mA
Supplier Device Package: 6-SOP (2.54mm)
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR3UF30A,LM(CT TCR3UF30A,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=68764 Description: IC REG LINEAR 3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR3UF30A,LM(CT TCR3UF30A,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=68764 Description: IC REG LINEAR 3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP(TE6,F,M TA78L005AP(TE6,F,M Toshiba Semiconductor and Storage TA78LyyyAP.pdf Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP(TORI,FM TA78L005AP(TORI,FM Toshiba Semiconductor and Storage TA78LyyyAP.pdf Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,6FNCF(J TA78L005AP,6FNCF(J Toshiba Semiconductor and Storage TA78LyyyAP.pdf Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,6KEHF(M TA78L005AP,6KEHF(M Toshiba Semiconductor and Storage TA78LyyyAP.pdf Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,F(J TA78L005AP,F(J Toshiba Semiconductor and Storage TA78LyyyAP.pdf Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,HOTIF(M TA78L005AP,HOTIF(M Toshiba Semiconductor and Storage TA78LyyyAP.pdf Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,SDENF(J TA78L005AP,SDENF(J Toshiba Semiconductor and Storage TA78LyyyAP.pdf Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,T6F(J TA78L005AP,T6F(J Toshiba Semiconductor and Storage TA78LyyyAP.pdf Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS12E65F,S1Q
TRS12E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 12A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 65pF @ 650V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP785F(Y-LF7,F TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F
TLP785F(Y-LF7,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SH08FU,LJ(CT TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU
TC7SH08FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.06 EUR
9000+0.06 EUR
15000+0.06 EUR
21000+0.06 EUR
30000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TC7SH08FU,LJ(CT TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU
TC7SH08FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 40274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
157+0.11 EUR
180+0.10 EUR
213+0.08 EUR
250+0.08 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
TC7S08F,LF docget.jsp?did=20179&prodName=TC7S08F
TC7S08F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TC7S08F,LF docget.jsp?did=20179&prodName=TC7S08F
TC7S08F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 6786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
104+0.17 EUR
118+0.15 EUR
139+0.13 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N951L,EFF catalog20200115.pdf
SSM6N951L,EFF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N951L,EFF catalog20200115.pdf
SSM6N951L,EFF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R104PB,L1XHQ TPW1R104PB_datasheet_en_20200624.pdf?did=62007&prodName=TPW1R104PB
TPW1R104PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.07 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R104PB,L1XHQ TPW1R104PB_datasheet_en_20200624.pdf?did=62007&prodName=TPW1R104PB
TPW1R104PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
auf Bestellung 24500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
10+2.40 EUR
100+1.63 EUR
500+1.31 EUR
1000+1.20 EUR
2000+1.11 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TPHR7904PB,L1XHQ TPHR7904PB_datasheet_en_20200624.pdf?did=60944&prodName=TPHR7904PB
TPHR7904PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.92 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPHR7904PB,L1XHQ TPHR7904PB_datasheet_en_20200624.pdf?did=60944&prodName=TPHR7904PB
TPHR7904PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.74 EUR
10+3.75 EUR
100+2.62 EUR
500+2.13 EUR
1000+1.98 EUR
2000+1.92 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TPWR7904PB,L1XHQ TPWR7904PB_datasheet_en_20200624.pdf?did=62009&prodName=TPWR7904PB
TPWR7904PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.37 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPWR7904PB,L1XHQ TPWR7904PB_datasheet_en_20200624.pdf?did=62009&prodName=TPWR7904PB
TPWR7904PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
10+2.90 EUR
100+2.00 EUR
500+1.61 EUR
1000+1.48 EUR
2000+1.38 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N67NU,LF SSM6N67NU_datasheet_en_20171218.pdf?did=60461&prodName=SSM6N67NU
SSM6N67NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.20 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N67NU,LF SSM6N67NU_datasheet_en_20171218.pdf?did=60461&prodName=SSM6N67NU
SSM6N67NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 16314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
30+0.60 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N17FU(TE85L,F) SSM6N17FU_datasheet_en_20140301.pdf?did=19758&prodName=SSM6N17FU
SSM6N17FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N17FU(TE85L,F) SSM6N17FU_datasheet_en_20140301.pdf?did=19758&prodName=SSM6N17FU
SSM6N17FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N36TU,LF
SSM6N36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N36TU,LF
SSM6N36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 11607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
39+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N24TU,LF SSM6N24TU_datasheet_en_20140301.pdf?did=22360&prodName=SSM6N24TU
SSM6N24TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N24TU,LF SSM6N24TU_datasheet_en_20140301.pdf?did=22360&prodName=SSM6N24TU
SSM6N24TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
32+0.56 EUR
100+0.34 EUR
500+0.31 EUR
1000+0.21 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
TRS4A65F,S1Q
TRS4A65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F DIODE TO-220-2L V=650 IF=4A
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TB9052FNG(EL) docget.jsp?did=15592&prodName=TB9052FNG
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB9052FNG(EL) docget.jsp?did=15592&prodName=TB9052FNG
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H660FNG,EL TC78H660FNG_datasheet_en_20200908.pdf?did=69605&prodName=TC78H660FNG
TC78H660FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H660FNG,EL TC78H660FNG_datasheet_en_20200908.pdf?did=69605&prodName=TC78H660FNG
TC78H660FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 3784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
15+1.23 EUR
25+1.11 EUR
100+0.98 EUR
250+0.92 EUR
500+0.88 EUR
1000+0.85 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-GR,LF docget.jsp?did=61219&prodName=TTC1949
TTC1949-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-GR,LF docget.jsp?did=61219&prodName=TTC1949
TTC1949-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 5996 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-Y,LF docget.jsp?did=61219&prodName=TTC1949
TTC1949-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-Y,LF docget.jsp?did=61219&prodName=TTC1949
TTC1949-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN2707,LF RN2707_datasheet_en_20191029.pdf?did=18903&prodName=RN2707
RN2707,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2707,LF RN2707_datasheet_en_20191029.pdf?did=18903&prodName=RN2707
RN2707,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE
RN1711JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE
RN1711JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.20 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
TK155A65Z,S4X docget.jsp?did=67744&prodName=TK155A65Z
TK155A65Z,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.92 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK200F04N1L,LXGQ docget.jsp?did=15454&prodName=TK200F04N1L
TK200F04N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.48 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
TK200F04N1L,LXGQ docget.jsp?did=15454&prodName=TK200F04N1L
TK200F04N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1016 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.32 EUR
10+4.28 EUR
100+3.25 EUR
500+3.03 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK20E60W5,S1VX TK20E60W5_datasheet_en_20151022.pdf?did=14970&prodName=TK20E60W5
TK20E60W5,S1VX
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK20J60W,S1VE TK20J60W_datasheet_en_20131226.pdf?did=13896&prodName=TK20J60W
TK20J60W,S1VE
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.23 EUR
25+5.91 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLP3123(D4,F
TLP3123(D4,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-40V
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 100 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP3123(D4,TP,F
TLP3123(D4,TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 100 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK1K9A60F,S4X docget.jsp?did=59768&prodName=TK1K9A60F
TK1K9A60F,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.7A TO220SIS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TBAT54,LM TBAT54_datasheet_en_20171117.pdf?did=37137&prodName=TBAT54
TBAT54,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 140MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Current - Average Rectified (Io): 140mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA1588-GR,LF docget.jsp?did=19174&prodName=2SA1588
2SA1588-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF2B20M4SL,L3F DF2B20M4SL_datasheet_en_20180110.pdf?did=55277&prodName=DF2B20M4SL
DF2B20M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 18.5VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 15W
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.06 EUR
20000+0.05 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DF2B20M4SL,L3F DF2B20M4SL_datasheet_en_20180110.pdf?did=55277&prodName=DF2B20M4SL
DF2B20M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 18.5VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 15W
Power Line Protection: No
auf Bestellung 31329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
87+0.20 EUR
201+0.09 EUR
500+0.08 EUR
1000+0.08 EUR
2000+0.08 EUR
5000+0.07 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
TC7SET126F,LJ(CT docget.jsp?did=659&prodName=TC7SET126F
TC7SET126F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SET126F,LJ(CT docget.jsp?did=659&prodName=TC7SET126F
TC7SET126F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP197A(F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 400 mA
Supplier Device Package: 6-SOP (2.54mm)
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR3UF30A,LM(CT docget.jsp?did=68764
TCR3UF30A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR3UF30A,LM(CT docget.jsp?did=68764
TCR3UF30A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP(TE6,F,M TA78LyyyAP.pdf
TA78L005AP(TE6,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP(TORI,FM TA78LyyyAP.pdf
TA78L005AP(TORI,FM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,6FNCF(J TA78LyyyAP.pdf
TA78L005AP,6FNCF(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,6KEHF(M TA78LyyyAP.pdf
TA78L005AP,6KEHF(M
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,F(J TA78LyyyAP.pdf
TA78L005AP,F(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,HOTIF(M TA78LyyyAP.pdf
TA78L005AP,HOTIF(M
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,SDENF(J TA78LyyyAP.pdf
TA78L005AP,SDENF(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TA78L005AP,T6F(J TA78LyyyAP.pdf
TA78L005AP,T6F(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 142 143 144 145 146 147 148 149 150 151 152 154 176 198 220 224  [ Nächste Seite >> ]