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RN2103MFV,L3F(CT RN2103MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2103MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 6790 Stücke:
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59+0.36 EUR
65+0.32 EUR
118+0.18 EUR
500+0.11 EUR
1000+0.075 EUR
2000+0.063 EUR
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RN2103MFV,L3F RN2103MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2101MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TJ60S04M3L,LXHQ TJ60S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11301&prodName=TJ60S04M3L Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TJ60S04M3L,LXHQ TJ60S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11301&prodName=TJ60S04M3L Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1913 Stücke:
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10+2.45 EUR
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500+1.31 EUR
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TC7SZ34AFS,L3J(T TC7SZ34AFS,L3J(T Toshiba Semiconductor and Storage TC7SZ34AFS_datasheet_en_20190130.pdf?did=1653&prodName=TC7SZ34AFS Description: IC BUFFER NON-INVERTING 5.5V FSV
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Supplier Device Package: fSV
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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HDKGB13A2A01T HDKGB13A2A01T Toshiba Semiconductor and Storage Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Weight: 4.13 oz (117 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
auf Bestellung 22 Stücke:
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10+128 EUR
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TLP3823(F TLP3823(F Toshiba Semiconductor and Storage docget.jsp?did=57854&prodName=TLP3823 Description: SSR RELAY SPST-NO 3A 0-100V
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SSM3K341R,LXHF SSM3K341R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=35714&prodName=SSM3K341R Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
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3000+0.33 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.27 EUR
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SSM3K341R,LXHF SSM3K341R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=35714&prodName=SSM3K341R Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
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TD62783AFNG(O,S) Toshiba Semiconductor and Storage Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TD62783AFG,S TD62783AFG,S Toshiba Semiconductor and Storage TD62783APG%2CAFG.pdf Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TD62783APG,J,S Toshiba Semiconductor and Storage Description: IC TRANSCEIVER 8/0 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-DIP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TD62783AFG,S,EL TD62783AFG,S,EL Toshiba Semiconductor and Storage TD62783APG%2CAFG.pdf Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TD62783AFNG,S,EL Toshiba Semiconductor and Storage Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TC62D722CFNG TC62D722CFNG Toshiba Semiconductor and Storage TC62D722CFNG_datasheet_en_20180509.pdf?did=61498&prodName=TC62D722CFNG Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Produkt ist nicht verfügbar
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SSM6N44FU,LF SSM6N44FU,LF Toshiba Semiconductor and Storage docget.jsp?did=365&prodName=SSM6N44FU Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 12000 Stücke:
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3000+0.13 EUR
6000+0.11 EUR
9000+0.11 EUR
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TLP781F(D4GRH-T7,F Toshiba Semiconductor and Storage TLP781%28F%29.pdf Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TK55S10N1,LXHQ TK55S10N1,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=13952&prodName=TK55S10N1 Description: MOSFET N-CH 100V 55A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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2000+1.19 EUR
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TK55S10N1,LXHQ TK55S10N1,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=13952&prodName=TK55S10N1 Description: MOSFET N-CH 100V 55A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 8742 Stücke:
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6+3.81 EUR
10+2.67 EUR
100+1.81 EUR
500+1.44 EUR
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TJ60S06M3L,LXHQ TJ60S06M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11303&prodName=TJ60S06M3L Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2000+1.13 EUR
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TJ60S06M3L,LXHQ TJ60S06M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11303&prodName=TJ60S06M3L Description: MOSFET P-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2271 Stücke:
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6+3.94 EUR
10+2.52 EUR
100+1.71 EUR
500+1.37 EUR
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XPN6R706NC,L1XHQ XPN6R706NC,L1XHQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 60V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
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XPN6R706NC,L1XHQ XPN6R706NC,L1XHQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 60V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 27960 Stücke:
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6+3.81 EUR
10+2.43 EUR
100+1.63 EUR
500+1.3 EUR
1000+1.19 EUR
2000+1.09 EUR
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RN1903FE,LF(CT RN1903FE,LF(CT Toshiba Semiconductor and Storage RN1903FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1903FE Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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RN1903FE,LF(CT RN1903FE,LF(CT Toshiba Semiconductor and Storage RN1903FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1903FE Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
69+0.31 EUR
140+0.15 EUR
500+0.13 EUR
1000+0.087 EUR
2000+0.075 EUR
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RN4988FE,LF(CT RN4988FE,LF(CT Toshiba Semiconductor and Storage RN4988FE_datasheet_en_20210818.pdf?did=19056&prodName=RN4988FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN4988FE,LF(CT RN4988FE,LF(CT Toshiba Semiconductor and Storage RN4988FE_datasheet_en_20210818.pdf?did=19056&prodName=RN4988FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 3965 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
86+0.25 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.086 EUR
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RN4903,LF(CT RN4903,LF(CT Toshiba Semiconductor and Storage RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903 Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.087 EUR
6000+0.079 EUR
9000+0.074 EUR
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RN4903,LF(CT RN4903,LF(CT Toshiba Semiconductor and Storage RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903 Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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RN4909,LF(CT RN4909,LF(CT Toshiba Semiconductor and Storage RN4909_datasheet_en_20210824.pdf?did=18965&prodName=RN4909 Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.087 EUR
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RN4909,LF(CT RN4909,LF(CT Toshiba Semiconductor and Storage RN4909_datasheet_en_20210824.pdf?did=18965&prodName=RN4909 Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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RN2703,LF RN2703,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2703 Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN2703,LF RN2703,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2703 Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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74LCX273FT(AJ) 74LCX273FT(AJ) Toshiba Semiconductor and Storage docget.jsp?did=15649&prodName=74LCX273FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 9.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.24 EUR
5000+0.23 EUR
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74LCX273FT(AJ) 74LCX273FT(AJ) Toshiba Semiconductor and Storage docget.jsp?did=15649&prodName=74LCX273FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 9.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 9925 Stücke:
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26+0.82 EUR
32+0.67 EUR
35+0.62 EUR
100+0.45 EUR
250+0.42 EUR
500+0.35 EUR
1000+0.26 EUR
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TJ50S06M3L,LXHQ TJ50S06M3L,LXHQ Toshiba Semiconductor and Storage TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L Description: MOSFET P-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 2000 Stücke:
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2000+1.11 EUR
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TJ50S06M3L,LXHQ TJ50S06M3L,LXHQ Toshiba Semiconductor and Storage TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L Description: MOSFET P-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 3213 Stücke:
Lieferzeit 10-14 Tag (e)
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10+2.19 EUR
100+1.7 EUR
500+1.44 EUR
1000+1.18 EUR
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TTA006B,Q(S Toshiba Semiconductor and Storage Description: TRANSISTOR PNP BIPO TO126N
Packaging: Tube
Produkt ist nicht verfügbar
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TLP387(TPL,E TLP387(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=35919&prodName=TLP387 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TLP387(TPL,E TLP387(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=35919&prodName=TLP387 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
auf Bestellung 2594 Stücke:
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14+1.52 EUR
20+1.06 EUR
100+0.79 EUR
500+0.65 EUR
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TLP523-4(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-4(MBS,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-4(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN2309,LF RN2309,LF Toshiba Semiconductor and Storage RN2309_datasheet_en_20210824.pdf?did=19003&prodName=RN2309 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.05 EUR
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RN2309,LF RN2309,LF Toshiba Semiconductor and Storage RN2309_datasheet_en_20210824.pdf?did=19003&prodName=RN2309 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 6000 Stücke:
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112+0.19 EUR
159+0.13 EUR
238+0.088 EUR
500+0.067 EUR
1000+0.06 EUR
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TC7SH125FU,LJ(CT TC7SH125FU,LJ(CT Toshiba Semiconductor and Storage TC7SH125FU_datasheet_en_20170516.pdf?did=30172&prodName=TC7SH125FU Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TC7SH125FU,LJ(CT TC7SH125FU,LJ(CT Toshiba Semiconductor and Storage TC7SH125FU_datasheet_en_20170516.pdf?did=30172&prodName=TC7SH125FU Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 2616 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.61 EUR
61+0.35 EUR
74+0.29 EUR
100+0.21 EUR
250+0.18 EUR
500+0.15 EUR
1000+0.13 EUR
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74VHC9595FT 74VHC9595FT Toshiba Semiconductor and Storage docget.jsp?did=28789&prodName=74VHC9595FT Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
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2500+0.17 EUR
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74VHC9595FT 74VHC9595FT Toshiba Semiconductor and Storage docget.jsp?did=28789&prodName=74VHC9595FT Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 6695 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
72+0.3 EUR
82+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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TB67H410NG TB67H410NG Toshiba Semiconductor and Storage TB67H410NG_datasheet_en_20150127.pdf?did=29679&prodName=TB67H410NG Description: IC MOTOR DRVR 4.75V-5.25V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 62 Stücke:
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5+5.13 EUR
20+4.62 EUR
40+4.37 EUR
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TJ20S04M3L,LXHQ TJ20S04M3L,LXHQ Toshiba Semiconductor and Storage TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.75 EUR
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TJ20S04M3L,LXHQ TJ20S04M3L,LXHQ Toshiba Semiconductor and Storage TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L Description: MOSFET P-CH 40V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 9718 Stücke:
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100+1.15 EUR
500+0.9 EUR
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TJ80S04M3L,LXHQ TJ80S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11287&prodName=TJ80S04M3L Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TJ80S04M3L,LXHQ TJ80S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11287&prodName=TJ80S04M3L Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ40S04M3L,LXHQ TJ40S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11299&prodName=TJ40S04M3L Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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2000+0.88 EUR
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TJ40S04M3L,LXHQ TJ40S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11299&prodName=TJ40S04M3L Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5818 Stücke:
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12+1.86 EUR
100+1.32 EUR
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TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Toshiba Semiconductor and Storage TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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1000+2.53 EUR
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TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Toshiba Semiconductor and Storage TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1615 Stücke:
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100+3.42 EUR
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SSM3J64CTC,L3F SSM3J64CTC,L3F Toshiba Semiconductor and Storage docget.jsp?did=59149&prodName=SSM3J64CTC Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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SSM3J64CTC,L3F SSM3J64CTC,L3F Toshiba Semiconductor and Storage docget.jsp?did=59149&prodName=SSM3J64CTC Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 17897 Stücke:
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28+0.77 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
5000+0.15 EUR
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RN2103MFV,L3F(CT docget.jsp?did=5883&prodName=RN2103MFV
RN2103MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 6790 Stücke:
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59+0.36 EUR
65+0.32 EUR
118+0.18 EUR
500+0.11 EUR
1000+0.075 EUR
2000+0.063 EUR
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RN2103MFV,L3F docget.jsp?did=5883&prodName=RN2101MFV
RN2103MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TJ60S04M3L,LXHQ docget.jsp?did=11301&prodName=TJ60S04M3L
TJ60S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TJ60S04M3L,LXHQ docget.jsp?did=11301&prodName=TJ60S04M3L
TJ60S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1913 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.86 EUR
10+2.45 EUR
100+1.65 EUR
500+1.31 EUR
1000+1.2 EUR
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TC7SZ34AFS,L3J(T TC7SZ34AFS_datasheet_en_20190130.pdf?did=1653&prodName=TC7SZ34AFS
TC7SZ34AFS,L3J(T
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 5.5V FSV
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Supplier Device Package: fSV
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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HDKGB13A2A01T
HDKGB13A2A01T
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Weight: 4.13 oz (117 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
auf Bestellung 22 Stücke:
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1+141.24 EUR
10+128 EUR
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TLP3823(F docget.jsp?did=57854&prodName=TLP3823
TLP3823(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
auf Bestellung 18 Stücke:
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SSM3K341R,LXHF docget.jsp?did=35714&prodName=SSM3K341R
SSM3K341R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.33 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.27 EUR
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SSM3K341R,LXHF docget.jsp?did=35714&prodName=SSM3K341R
SSM3K341R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 19112 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
24+0.88 EUR
100+0.57 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 15 Stücke
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TD62783AFNG(O,S)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TD62783AFG,S TD62783APG%2CAFG.pdf
TD62783AFG,S
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TD62783APG,J,S
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-DIP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TD62783AFG,S,EL TD62783APG%2CAFG.pdf
TD62783AFG,S,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TD62783AFNG,S,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TC62D722CFNG TC62D722CFNG_datasheet_en_20180509.pdf?did=61498&prodName=TC62D722CFNG
TC62D722CFNG
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Produkt ist nicht verfügbar
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SSM6N44FU,LF docget.jsp?did=365&prodName=SSM6N44FU
SSM6N44FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.11 EUR
9000+0.11 EUR
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TLP781F(D4GRH-T7,F TLP781%28F%29.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TK55S10N1,LXHQ docget.jsp?did=13952&prodName=TK55S10N1
TK55S10N1,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.19 EUR
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TK55S10N1,LXHQ docget.jsp?did=13952&prodName=TK55S10N1
TK55S10N1,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 8742 Stücke:
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AnzahlPrivatkunde
6+3.81 EUR
10+2.67 EUR
100+1.81 EUR
500+1.44 EUR
1000+1.33 EUR
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TJ60S06M3L,LXHQ docget.jsp?did=11303&prodName=TJ60S06M3L
TJ60S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.13 EUR
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TJ60S06M3L,LXHQ docget.jsp?did=11303&prodName=TJ60S06M3L
TJ60S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2271 Stücke:
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6+3.94 EUR
10+2.52 EUR
100+1.71 EUR
500+1.37 EUR
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XPN6R706NC,L1XHQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
XPN6R706NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 20000 Stücke:
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5000+1.02 EUR
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XPN6R706NC,L1XHQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
XPN6R706NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 27960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.81 EUR
10+2.43 EUR
100+1.63 EUR
500+1.3 EUR
1000+1.19 EUR
2000+1.09 EUR
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RN1903FE,LF(CT RN1903FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1903FE
RN1903FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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RN1903FE,LF(CT RN1903FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1903FE
RN1903FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
69+0.31 EUR
140+0.15 EUR
500+0.13 EUR
1000+0.087 EUR
2000+0.075 EUR
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RN4988FE,LF(CT RN4988FE_datasheet_en_20210818.pdf?did=19056&prodName=RN4988FE
RN4988FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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RN4988FE,LF(CT RN4988FE_datasheet_en_20210818.pdf?did=19056&prodName=RN4988FE
RN4988FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 3965 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
86+0.25 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.086 EUR
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RN4903,LF(CT RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903
RN4903,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.087 EUR
6000+0.079 EUR
9000+0.074 EUR
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RN4903,LF(CT RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903
RN4903,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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RN4909,LF(CT RN4909_datasheet_en_20210824.pdf?did=18965&prodName=RN4909
RN4909,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.087 EUR
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RN4909,LF(CT RN4909_datasheet_en_20210824.pdf?did=18965&prodName=RN4909
RN4909,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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RN2703,LF docget.jsp?did=18900&prodName=RN2703
RN2703,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN2703,LF docget.jsp?did=18900&prodName=RN2703
RN2703,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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74LCX273FT(AJ) docget.jsp?did=15649&prodName=74LCX273FT
74LCX273FT(AJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 9.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.24 EUR
5000+0.23 EUR
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74LCX273FT(AJ) docget.jsp?did=15649&prodName=74LCX273FT
74LCX273FT(AJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 9.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 9925 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
32+0.67 EUR
35+0.62 EUR
100+0.45 EUR
250+0.42 EUR
500+0.35 EUR
1000+0.26 EUR
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TJ50S06M3L,LXHQ TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L
TJ50S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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2000+1.11 EUR
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TJ50S06M3L,LXHQ TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L
TJ50S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 3213 Stücke:
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10+2.19 EUR
100+1.7 EUR
500+1.44 EUR
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TTA006B,Q(S
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR PNP BIPO TO126N
Packaging: Tube
Produkt ist nicht verfügbar
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TLP387(TPL,E docget.jsp?did=35919&prodName=TLP387
TLP387(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP387(TPL,E docget.jsp?did=35919&prodName=TLP387
TLP387(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
auf Bestellung 2594 Stücke:
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14+1.52 EUR
20+1.06 EUR
100+0.79 EUR
500+0.65 EUR
1000+0.61 EUR
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TLP523-4(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-4(MBS,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-4(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN2309,LF RN2309_datasheet_en_20210824.pdf?did=19003&prodName=RN2309
RN2309,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.05 EUR
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RN2309,LF RN2309_datasheet_en_20210824.pdf?did=19003&prodName=RN2309
RN2309,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 6000 Stücke:
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112+0.19 EUR
159+0.13 EUR
238+0.088 EUR
500+0.067 EUR
1000+0.06 EUR
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TC7SH125FU,LJ(CT TC7SH125FU_datasheet_en_20170516.pdf?did=30172&prodName=TC7SH125FU
TC7SH125FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Produkt ist nicht verfügbar
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TC7SH125FU,LJ(CT TC7SH125FU_datasheet_en_20170516.pdf?did=30172&prodName=TC7SH125FU
TC7SH125FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 2616 Stücke:
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35+0.61 EUR
61+0.35 EUR
74+0.29 EUR
100+0.21 EUR
250+0.18 EUR
500+0.15 EUR
1000+0.13 EUR
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74VHC9595FT docget.jsp?did=28789&prodName=74VHC9595FT
74VHC9595FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
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2500+0.17 EUR
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74VHC9595FT docget.jsp?did=28789&prodName=74VHC9595FT
74VHC9595FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 6695 Stücke:
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48+0.44 EUR
72+0.3 EUR
82+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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TB67H410NG TB67H410NG_datasheet_en_20150127.pdf?did=29679&prodName=TB67H410NG
TB67H410NG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 62 Stücke:
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5+5.13 EUR
20+4.62 EUR
40+4.37 EUR
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TJ20S04M3L,LXHQ TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L
TJ20S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
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2000+0.75 EUR
4000+0.69 EUR
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TJ20S04M3L,LXHQ TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L
TJ20S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 9718 Stücke:
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8+2.75 EUR
13+1.74 EUR
100+1.15 EUR
500+0.9 EUR
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TJ80S04M3L,LXHQ docget.jsp?did=11287&prodName=TJ80S04M3L
TJ80S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ80S04M3L,LXHQ docget.jsp?did=11287&prodName=TJ80S04M3L
TJ80S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ40S04M3L,LXHQ docget.jsp?did=11299&prodName=TJ40S04M3L
TJ40S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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2000+0.88 EUR
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TJ40S04M3L,LXHQ docget.jsp?did=11299&prodName=TJ40S04M3L
TJ40S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5818 Stücke:
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8+2.81 EUR
12+1.86 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.95 EUR
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TJ200F04M3L,LXHQ TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L
TJ200F04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.53 EUR
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TJ200F04M3L,LXHQ TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L
TJ200F04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1615 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.38 EUR
10+4.86 EUR
100+3.42 EUR
500+3.09 EUR
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SSM3J64CTC,L3F docget.jsp?did=59149&prodName=SSM3J64CTC
SSM3J64CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J64CTC,L3F docget.jsp?did=59149&prodName=SSM3J64CTC
SSM3J64CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 17897 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
5000+0.15 EUR
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