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RN1107,LF(CT RN1107,LF(CT Toshiba Semiconductor and Storage RN1107,8,9.pdf Description: TRANS PREBIAS NPN 50V 0.1A SSM
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TLP512(HITACHI,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN2117(TE85L,F) RN2117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18859&prodName=RN2117 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN2117(TE85L,F) RN2117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18859&prodName=RN2117 Description: TRANS PREBIAS PNP 50V 0.1A SSM
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32+0.67 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.15 EUR
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74VHCV541FT 74VHCV541FT Toshiba Semiconductor and Storage docget.jsp?did=15531&prodName=74VHCV541FT Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOPB
Part Status: Active
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74VHCV541FT 74VHCV541FT Toshiba Semiconductor and Storage docget.jsp?did=15531&prodName=74VHCV541FT Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOPB
Part Status: Active
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27+0.77 EUR
100+0.6 EUR
250+0.5 EUR
500+0.44 EUR
1000+0.39 EUR
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TCK401G,LF TCK401G,LF Toshiba Semiconductor and Storage docget.jsp?did=59174&prodName=TCK401G Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
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TCK401G,LF TCK401G,LF Toshiba Semiconductor and Storage docget.jsp?did=59174&prodName=TCK401G Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
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20+1.07 EUR
28+0.76 EUR
31+0.68 EUR
100+0.6 EUR
250+0.55 EUR
500+0.52 EUR
1000+0.5 EUR
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TCK402G,LF TCK402G,LF Toshiba Semiconductor and Storage TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TCK402G,LF TCK402G,LF Toshiba Semiconductor and Storage TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TK750A60F,S4X TK750A60F,S4X Toshiba Semiconductor and Storage TK750A60F_datasheet_en_20180925.pdf?did=59772&prodName=TK750A60F Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
auf Bestellung 407 Stücke:
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7+3.33 EUR
10+2.12 EUR
50+1.58 EUR
100+1.42 EUR
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CVJ10F30,LF CVJ10F30,LF Toshiba Semiconductor and Storage docget.jsp?did=13914&prodName=CVJ10F30 Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
Produkt ist nicht verfügbar
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CVJ10F30,LF CVJ10F30,LF Toshiba Semiconductor and Storage docget.jsp?did=13914&prodName=CVJ10F30 Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
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27+0.8 EUR
36+0.6 EUR
100+0.37 EUR
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TLP2955(F) TLP2955(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER DIP8 THROUGH-HOLE
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TK160F10N1L,LXGQ TK160F10N1L,LXGQ Toshiba Semiconductor and Storage TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
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1000+3.31 EUR
3000+3.06 EUR
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TK160F10N1L,LXGQ TK160F10N1L,LXGQ Toshiba Semiconductor and Storage TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4906 Stücke:
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3+9.15 EUR
10+6.06 EUR
50+4.72 EUR
100+4.3 EUR
500+3.75 EUR
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2SC5354,TOJSQ(O 2SC5354,TOJSQ(O Toshiba Semiconductor and Storage 2SC5354_datasheet_en_20131101.pdf?did=20689&prodName=2SC5354 Description: TRANSISTOR NPN TO-3PN
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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2SC5354,XGQ(O Toshiba Semiconductor and Storage 2SC5354_datasheet_en_20131101.pdf?did=20689&prodName=2SC5354 Description: TRANSISTOR NPN TO-3PN
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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RN1905FE,LF(CT RN1905FE,LF(CT Toshiba Semiconductor and Storage RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
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4000+0.089 EUR
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RN1905FE,LF(CT RN1905FE,LF(CT Toshiba Semiconductor and Storage RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 7443 Stücke:
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46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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TCR3UG08A,LF TCR3UG08A,LF Toshiba Semiconductor and Storage TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A Description: IC REG LINEAR 0.8V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Produkt ist nicht verfügbar
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TCR3UG08A,LF TCR3UG08A,LF Toshiba Semiconductor and Storage TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A Description: IC REG LINEAR 0.8V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 4480 Stücke:
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24+0.88 EUR
29+0.73 EUR
32+0.67 EUR
100+0.49 EUR
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500+0.37 EUR
1000+0.27 EUR
2500+0.25 EUR
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TCR3UF105A,LM(CT TCR3UF105A,LM(CT Toshiba Semiconductor and Storage TCR3UF105A_datasheet_en_20241028.pdf?did=68764&prodName=TCR3UF105A Description: IC REG LINEAR 1.05V 300MA SMV
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3000+0.2 EUR
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TCR3UF105A,LM(CT TCR3UF105A,LM(CT Toshiba Semiconductor and Storage TCR3UF105A_datasheet_en_20241028.pdf?did=68764&prodName=TCR3UF105A Description: IC REG LINEAR 1.05V 300MA SMV
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42+0.5 EUR
61+0.35 EUR
70+0.3 EUR
100+0.26 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.21 EUR
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TCR3UF09A,LM(CT TCR3UF09A,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=68764 Description: IC REG LINEAR 0.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.157V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3UF09A,LM(CT TCR3UF09A,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=68764 Description: IC REG LINEAR 0.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.157V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5241 Stücke:
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46+0.46 EUR
67+0.31 EUR
76+0.27 EUR
100+0.24 EUR
250+0.21 EUR
500+0.2 EUR
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RN4987FE,LF(CT RN4987FE,LF(CT Toshiba Semiconductor and Storage RN4987FE_datasheet_en_20210818.pdf?did=19054&prodName=RN4987FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 84782 Stücke:
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42+0.5 EUR
69+0.31 EUR
111+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
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TLP531(GR-LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(GRL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(MBS,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(BL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(Y-LF5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(MBSIN-TP5,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(BL-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(BL-TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(YG,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(HIT-BL-L1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(GR-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(Y-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(HIT-BL-T1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(BL-LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(HIT-BL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP531(MBS-TP5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(Y,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(GR,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(GB,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK90S06N1L,LXHQ TK90S06N1L,LXHQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 60V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
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TK90S06N1L,LXHQ TK90S06N1L,LXHQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
auf Bestellung 9627 Stücke:
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10+2.24 EUR
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100+1.43 EUR
500+1.21 EUR
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RN1105MFV,L3F(CT RN1105MFV,L3F(CT Toshiba Semiconductor and Storage RN1105MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1105MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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RN1105MFV,L3F(CT RN1105MFV,L3F(CT Toshiba Semiconductor and Storage RN1105MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1105MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 13663 Stücke:
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67+0.31 EUR
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183+0.12 EUR
500+0.083 EUR
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TC74HC7292AP(F) TC74HC7292AP(F) Toshiba Semiconductor and Storage docget.jsp?did=16705&prodName=TC74HC7292AP Description: IC OSC CLOCK OSCILLATOR 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Clock Oscillator
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-DIP
Part Status: Not For New Designs
Current - Supply: 4 µA
Produkt ist nicht verfügbar
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TLP781F(D4-FUNGR,F Toshiba Semiconductor and Storage TLP781%28F%29.pdf Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TK1K2A60F,S4X TK1K2A60F,S4X Toshiba Semiconductor and Storage TK1K2A60F_datasheet_en_20180925.pdf?did=59766&prodName=TK1K2A60F Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 630µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V
auf Bestellung 90 Stücke:
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8+2.95 EUR
12+1.86 EUR
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SSM6J214FE(TE85L,F SSM6J214FE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=7118&prodName=SSM6J214FE Description: MOSFET P-CH 30V 3.6A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 11436 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.13 EUR
30+0.7 EUR
50+0.51 EUR
100+0.45 EUR
500+0.33 EUR
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TK2K2A60F,S4X TK2K2A60F,S4X Toshiba Semiconductor and Storage TK2K2A60F_datasheet_en_20180925.pdf?did=61567&prodName=TK2K2A60F Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 350µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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2SC4682,T6CSF(J 2SC4682,T6CSF(J Toshiba Semiconductor and Storage 2SC4682_2009-12-21.pdf Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SC4682,T6F(J 2SC4682,T6F(J Toshiba Semiconductor and Storage 2SC4682_2009-12-21.pdf Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIA78L12BP Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO 12V DIP
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP7830(D4-LF4,E TLP7830(D4-LF4,E Toshiba Semiconductor and Storage Description: IC OP AMP ISOLATION SO8
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Modulator
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SO
Number of Channels: 1
Produkt ist nicht verfügbar
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RN1107,LF(CT RN1107,8,9.pdf
RN1107,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3806 Stücke:
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TLP512(HITACHI,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN2117(TE85L,F) docget.jsp?did=18859&prodName=RN2117
RN2117(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN2117(TE85L,F) docget.jsp?did=18859&prodName=RN2117
RN2117(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 2950 Stücke:
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AnzahlPrivatkunde
26+0.82 EUR
32+0.67 EUR
100+0.36 EUR
500+0.24 EUR
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74VHCV541FT docget.jsp?did=15531&prodName=74VHCV541FT
74VHCV541FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOPB
Part Status: Active
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.35 EUR
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74VHCV541FT docget.jsp?did=15531&prodName=74VHCV541FT
74VHCV541FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOPB
Part Status: Active
auf Bestellung 5928 Stücke:
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AnzahlPrivatkunde
14+1.57 EUR
23+0.94 EUR
27+0.77 EUR
100+0.6 EUR
250+0.5 EUR
500+0.44 EUR
1000+0.39 EUR
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TCK401G,LF docget.jsp?did=59174&prodName=TCK401G
TCK401G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.46 EUR
10000+0.45 EUR
25000+0.44 EUR
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TCK401G,LF docget.jsp?did=59174&prodName=TCK401G
TCK401G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
auf Bestellung 56464 Stücke:
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AnzahlPrivatkunde
20+1.07 EUR
28+0.76 EUR
31+0.68 EUR
100+0.6 EUR
250+0.55 EUR
500+0.52 EUR
1000+0.5 EUR
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TCK402G,LF TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G
TCK402G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TCK402G,LF TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G
TCK402G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TK750A60F,S4X TK750A60F_datasheet_en_20180925.pdf?did=59772&prodName=TK750A60F
TK750A60F,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
auf Bestellung 407 Stücke:
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AnzahlPrivatkunde
7+3.33 EUR
10+2.12 EUR
50+1.58 EUR
100+1.42 EUR
Mindestbestellmenge: 7 Stücke
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CVJ10F30,LF docget.jsp?did=13914&prodName=CVJ10F30
CVJ10F30,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
Produkt ist nicht verfügbar
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CVJ10F30,LF docget.jsp?did=13914&prodName=CVJ10F30
CVJ10F30,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
36+0.6 EUR
100+0.37 EUR
Mindestbestellmenge: 27 Stücke
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TLP2955(F)
TLP2955(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER DIP8 THROUGH-HOLE
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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TK160F10N1L,LXGQ TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L
TK160F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.31 EUR
3000+3.06 EUR
Mindestbestellmenge: 1000 Stücke
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TK160F10N1L,LXGQ TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L
TK160F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4906 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.15 EUR
10+6.06 EUR
50+4.72 EUR
100+4.3 EUR
500+3.75 EUR
Mindestbestellmenge: 3 Stücke
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2SC5354,TOJSQ(O 2SC5354_datasheet_en_20131101.pdf?did=20689&prodName=2SC5354
2SC5354,TOJSQ(O
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN TO-3PN
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5354,XGQ(O 2SC5354_datasheet_en_20131101.pdf?did=20689&prodName=2SC5354
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN TO-3PN
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1905FE,LF(CT RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE
RN1905FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.089 EUR
Mindestbestellmenge: 4000 Stücke
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RN1905FE,LF(CT RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE
RN1905FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 7443 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 46 Stücke
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TCR3UG08A,LF TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A
TCR3UG08A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.8V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TCR3UG08A,LF TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A
TCR3UG08A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.8V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 4480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
29+0.73 EUR
32+0.67 EUR
100+0.49 EUR
250+0.45 EUR
500+0.37 EUR
1000+0.27 EUR
2500+0.25 EUR
Mindestbestellmenge: 24 Stücke
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TCR3UF105A,LM(CT TCR3UF105A_datasheet_en_20241028.pdf?did=68764&prodName=TCR3UF105A
TCR3UF105A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 300MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
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TCR3UF105A,LM(CT TCR3UF105A_datasheet_en_20241028.pdf?did=68764&prodName=TCR3UF105A
TCR3UF105A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 300MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
61+0.35 EUR
70+0.3 EUR
100+0.26 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.21 EUR
Mindestbestellmenge: 42 Stücke
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TCR3UF09A,LM(CT docget.jsp?did=68764
TCR3UF09A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.157V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TCR3UF09A,LM(CT docget.jsp?did=68764
TCR3UF09A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.157V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5241 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
67+0.31 EUR
76+0.27 EUR
100+0.24 EUR
250+0.21 EUR
500+0.2 EUR
Mindestbestellmenge: 46 Stücke
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RN4987FE,LF(CT RN4987FE_datasheet_en_20210818.pdf?did=19054&prodName=RN4987FE
RN4987FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 84782 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
69+0.31 EUR
111+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 42 Stücke
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TLP531(GR-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(GRL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(MBS,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(BL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(Y-LF5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(MBSIN-TP5,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(BL-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(BL-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(YG,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(HIT-BL-L1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(GR-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(Y-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(HIT-BL-T1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(BL-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(HIT-BL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(MBS-TP5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(Y,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(GR,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP531(GB,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK90S06N1L,LXHQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
TK90S06N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.2 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK90S06N1L,LXHQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
TK90S06N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
auf Bestellung 9627 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.24 EUR
12+1.84 EUR
100+1.43 EUR
500+1.21 EUR
1000+1.2 EUR
Mindestbestellmenge: 10 Stücke
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RN1105MFV,L3F(CT RN1105MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1105MFV
RN1105MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.051 EUR
Mindestbestellmenge: 8000 Stücke
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RN1105MFV,L3F(CT RN1105MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1105MFV
RN1105MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 13663 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
113+0.19 EUR
183+0.12 EUR
500+0.083 EUR
1000+0.073 EUR
2000+0.064 EUR
Mindestbestellmenge: 67 Stücke
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TC74HC7292AP(F) docget.jsp?did=16705&prodName=TC74HC7292AP
TC74HC7292AP(F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC OSC CLOCK OSCILLATOR 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Clock Oscillator
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-DIP
Part Status: Not For New Designs
Current - Supply: 4 µA
Produkt ist nicht verfügbar
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TLP781F(D4-FUNGR,F TLP781%28F%29.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TK1K2A60F,S4X TK1K2A60F_datasheet_en_20180925.pdf?did=59766&prodName=TK1K2A60F
TK1K2A60F,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 630µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.95 EUR
12+1.86 EUR
Mindestbestellmenge: 8 Stücke
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SSM6J214FE(TE85L,F docget.jsp?did=7118&prodName=SSM6J214FE
SSM6J214FE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 3.6A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 11436 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.13 EUR
30+0.7 EUR
50+0.51 EUR
100+0.45 EUR
500+0.33 EUR
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TK2K2A60F,S4X TK2K2A60F_datasheet_en_20180925.pdf?did=61567&prodName=TK2K2A60F
TK2K2A60F,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 350µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
Produkt ist nicht verfügbar
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2SC4682,T6CSF(J 2SC4682_2009-12-21.pdf
2SC4682,T6CSF(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SC4682,T6F(J 2SC4682_2009-12-21.pdf
2SC4682,T6F(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
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KIA78L12BP
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 12V DIP
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP7830(D4-LF4,E
TLP7830(D4-LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: IC OP AMP ISOLATION SO8
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Modulator
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SO
Number of Channels: 1
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