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TC7SH125FU,LJ(CT TC7SH125FU,LJ(CT Toshiba Semiconductor and Storage TC7SH125FU_datasheet_en_20170516.pdf?did=30172&prodName=TC7SH125FU Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 2616 Stücke:
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35+0.61 EUR
61+0.35 EUR
74+0.29 EUR
100+0.21 EUR
250+0.18 EUR
500+0.15 EUR
1000+0.13 EUR
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74VHC9595FT 74VHC9595FT Toshiba Semiconductor and Storage docget.jsp?did=28789&prodName=74VHC9595FT Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
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2500+0.17 EUR
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74VHC9595FT 74VHC9595FT Toshiba Semiconductor and Storage docget.jsp?did=28789&prodName=74VHC9595FT Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 6695 Stücke:
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48+0.44 EUR
72+0.3 EUR
82+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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TB67H410NG TB67H410NG Toshiba Semiconductor and Storage TB67H410NG_datasheet_en_20150127.pdf?did=29679&prodName=TB67H410NG Description: IC MOTOR DRVR 4.75V-5.25V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 62 Stücke:
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20+4.62 EUR
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TJ20S04M3L,LXHQ TJ20S04M3L,LXHQ Toshiba Semiconductor and Storage TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
auf Bestellung 8000 Stücke:
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2000+0.75 EUR
4000+0.69 EUR
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TJ20S04M3L,LXHQ TJ20S04M3L,LXHQ Toshiba Semiconductor and Storage TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L Description: MOSFET P-CH 40V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 9718 Stücke:
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13+1.74 EUR
100+1.15 EUR
500+0.9 EUR
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TJ80S04M3L,LXHQ TJ80S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11287&prodName=TJ80S04M3L Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ80S04M3L,LXHQ TJ80S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11287&prodName=TJ80S04M3L Description: MOSFET P-CH 40V 80A DPAK
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TJ40S04M3L,LXHQ TJ40S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11299&prodName=TJ40S04M3L Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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2000+0.88 EUR
4000+0.82 EUR
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TJ40S04M3L,LXHQ TJ40S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11299&prodName=TJ40S04M3L Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5818 Stücke:
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12+1.86 EUR
100+1.32 EUR
500+1.05 EUR
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TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Toshiba Semiconductor and Storage TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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1000+2.53 EUR
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TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Toshiba Semiconductor and Storage TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1615 Stücke:
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10+4.86 EUR
100+3.42 EUR
500+3.09 EUR
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SSM3J64CTC,L3F SSM3J64CTC,L3F Toshiba Semiconductor and Storage docget.jsp?did=59149&prodName=SSM3J64CTC Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J64CTC,L3F SSM3J64CTC,L3F Toshiba Semiconductor and Storage docget.jsp?did=59149&prodName=SSM3J64CTC Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 17897 Stücke:
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28+0.77 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
5000+0.15 EUR
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SSM3J65CTC,L3F SSM3J65CTC,L3F Toshiba Semiconductor and Storage SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
auf Bestellung 20000 Stücke:
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10000+0.14 EUR
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SSM3J65CTC,L3F SSM3J65CTC,L3F Toshiba Semiconductor and Storage SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
auf Bestellung 26774 Stücke:
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29+0.74 EUR
41+0.51 EUR
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500+0.23 EUR
1000+0.18 EUR
2000+0.17 EUR
5000+0.15 EUR
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2SD1223,L1XGQ(O Toshiba Semiconductor and Storage 2SD1223_datasheet_en_20131101.pdf?did=20861&prodName=2SD1223 Description: TRANSISTOR NPN DARL PWMOLD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR3UG285A,LF TCR3UG285A,LF Toshiba Semiconductor and Storage docget.jsp?did=59176&prodName=TCR3UG285A Description: IC REG LINEAR 2.85V 300MA 4WCSPF
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TCR3UG285A,LF TCR3UG285A,LF Toshiba Semiconductor and Storage docget.jsp?did=59176&prodName=TCR3UG285A Description: IC REG LINEAR 2.85V 300MA 4WCSPF
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TCR3UG28A,LF TCR3UG28A,LF Toshiba Semiconductor and Storage TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR3UG28A,LF TCR3UG28A,LF Toshiba Semiconductor and Storage TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 4898 Stücke:
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24+0.88 EUR
29+0.73 EUR
32+0.67 EUR
100+0.49 EUR
250+0.45 EUR
500+0.37 EUR
1000+0.27 EUR
2500+0.25 EUR
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TLP185(V4GBTL,SE TLP185(V4GBTL,SE Toshiba Semiconductor and Storage docget.jsp?did=14111&prodName=TLP185(SE Description: OPTOISO 3.75KV TRANS W/BASE 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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CUHS15S30,H3F CUHS15S30,H3F Toshiba Semiconductor and Storage CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30 Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 39000 Stücke:
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3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
30000+0.15 EUR
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CUHS15S30,H3F CUHS15S30,H3F Toshiba Semiconductor and Storage CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30 Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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TLP161G(T7TL,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T7TR,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T5TL,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(TPL,U,C,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT7,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT5,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP628-2(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TK190U65Z,RQ TK190U65Z,RQ Toshiba Semiconductor and Storage docget.jsp?did=69977&prodName=TK190U65Z Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Produkt ist nicht verfügbar
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TC7QPB9307FK(EL) TC7QPB9307FK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57137&prodName=TC7QPB9307FK Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
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TC7QPB9307FK(EL) TC7QPB9307FK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57137&prodName=TC7QPB9307FK Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
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21+1.02 EUR
25+0.93 EUR
100+0.81 EUR
250+0.75 EUR
500+0.73 EUR
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SSM3J377R,LXHF SSM3J377R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59203&prodName=SSM3J377R Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
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SSM3J377R,LXHF SSM3J377R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59203&prodName=SSM3J377R Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
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500+0.23 EUR
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TCKE805NA,RF TCKE805NA,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE805NA Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCKE805NA,RF TCKE805NA,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE805NA Description: IC ELECTRONIC FUSE 10WSON
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
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8+2.92 EUR
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SSM3K44MFV,L3F SSM3K44MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=363&prodName=SSM3K44MFV Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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SSM3K44MFV,L3F SSM3K44MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=363&prodName=SSM3K44MFV Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 34766 Stücke:
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130+0.17 EUR
500+0.12 EUR
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TLX9376(TPL,F TLX9376(TPL,F Toshiba Semiconductor and Storage docget.jsp?did=53145&prodName=TLX9376 Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
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3000+3.45 EUR
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TLX9376(TPL,F TLX9376(TPL,F Toshiba Semiconductor and Storage docget.jsp?did=53145&prodName=TLX9376 Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
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500+3.92 EUR
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TCK22946G,LF TCK22946G,LF Toshiba Semiconductor and Storage TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Tape & Reel (TR)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Supplier Device Package: 6-WCSPE (0.80x1.2)
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge
Part Status: Active
Produkt ist nicht verfügbar
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TCK22946G,LF TCK22946G,LF Toshiba Semiconductor and Storage TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge
Packaging: Cut Tape (CT)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Supplier Device Package: 6-WCSPE (0.80x1.2)
auf Bestellung 1660 Stücke:
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500+0.43 EUR
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RN1107,LF(CT RN1107,LF(CT Toshiba Semiconductor and Storage RN1107,8,9.pdf Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1107,LF(CT RN1107,LF(CT Toshiba Semiconductor and Storage RN1107,8,9.pdf Description: TRANS PREBIAS NPN 50V 0.1A SSM
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TLP512(HITACHI,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN2117(TE85L,F) RN2117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18859&prodName=RN2117 Description: TRANS PREBIAS PNP 50V 0.1A SSM
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RN2117(TE85L,F) RN2117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18859&prodName=RN2117 Description: TRANS PREBIAS PNP 50V 0.1A SSM
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100+0.36 EUR
500+0.24 EUR
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74VHCV541FT 74VHCV541FT Toshiba Semiconductor and Storage docget.jsp?did=15531&prodName=74VHCV541FT Description: IC BUF NON-INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 16mA, 16mA
Number of Bits per Element: 8
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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74VHCV541FT 74VHCV541FT Toshiba Semiconductor and Storage docget.jsp?did=15531&prodName=74VHCV541FT Description: IC BUF NON-INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 16mA, 16mA
Number of Bits per Element: 8
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5928 Stücke:
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TCK401G,LF TCK401G,LF Toshiba Semiconductor and Storage docget.jsp?did=59174&prodName=TCK401G Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
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TCK401G,LF TCK401G,LF Toshiba Semiconductor and Storage docget.jsp?did=59174&prodName=TCK401G Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
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TCK402G,LF TCK402G,LF Toshiba Semiconductor and Storage TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TCK402G,LF TCK402G,LF Toshiba Semiconductor and Storage TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TK750A60F,S4X TK750A60F,S4X Toshiba Semiconductor and Storage TK750A60F_datasheet_en_20180925.pdf?did=59772&prodName=TK750A60F Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
auf Bestellung 407 Stücke:
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50+1.58 EUR
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CVJ10F30,LF CVJ10F30,LF Toshiba Semiconductor and Storage docget.jsp?did=13914&prodName=CVJ10F30 Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
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CVJ10F30,LF CVJ10F30,LF Toshiba Semiconductor and Storage docget.jsp?did=13914&prodName=CVJ10F30 Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
auf Bestellung 386 Stücke:
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36+0.6 EUR
100+0.37 EUR
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TLP2955(F) TLP2955(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER DIP8 THROUGH-HOLE
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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TK160F10N1L,LXGQ TK160F10N1L,LXGQ Toshiba Semiconductor and Storage TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Description: MOSFET N-CH 100V 160A TO220SM
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 375W (Tc)
auf Bestellung 5000 Stücke:
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1000+3.3 EUR
3000+3.05 EUR
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TC7SH125FU,LJ(CT TC7SH125FU_datasheet_en_20170516.pdf?did=30172&prodName=TC7SH125FU
TC7SH125FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
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35+0.61 EUR
61+0.35 EUR
74+0.29 EUR
100+0.21 EUR
250+0.18 EUR
500+0.15 EUR
1000+0.13 EUR
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74VHC9595FT docget.jsp?did=28789&prodName=74VHC9595FT
74VHC9595FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
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2500+0.17 EUR
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74VHC9595FT docget.jsp?did=28789&prodName=74VHC9595FT
74VHC9595FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 6695 Stücke:
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48+0.44 EUR
72+0.3 EUR
82+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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TB67H410NG TB67H410NG_datasheet_en_20150127.pdf?did=29679&prodName=TB67H410NG
TB67H410NG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 62 Stücke:
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5+5.13 EUR
20+4.62 EUR
40+4.37 EUR
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TJ20S04M3L,LXHQ TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L
TJ20S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
auf Bestellung 8000 Stücke:
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2000+0.75 EUR
4000+0.69 EUR
6000+0.67 EUR
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TJ20S04M3L,LXHQ TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L
TJ20S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 9718 Stücke:
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AnzahlPrivatkunde
8+2.75 EUR
13+1.74 EUR
100+1.15 EUR
500+0.9 EUR
1000+0.82 EUR
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TJ80S04M3L,LXHQ docget.jsp?did=11287&prodName=TJ80S04M3L
TJ80S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ80S04M3L,LXHQ docget.jsp?did=11287&prodName=TJ80S04M3L
TJ80S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ40S04M3L,LXHQ docget.jsp?did=11299&prodName=TJ40S04M3L
TJ40S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
2000+0.88 EUR
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TJ40S04M3L,LXHQ docget.jsp?did=11299&prodName=TJ40S04M3L
TJ40S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5818 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.81 EUR
12+1.86 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.95 EUR
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TJ200F04M3L,LXHQ TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L
TJ200F04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.53 EUR
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TJ200F04M3L,LXHQ TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L
TJ200F04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1615 Stücke:
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AnzahlPrivatkunde
3+7.38 EUR
10+4.86 EUR
100+3.42 EUR
500+3.09 EUR
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SSM3J64CTC,L3F docget.jsp?did=59149&prodName=SSM3J64CTC
SSM3J64CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J64CTC,L3F docget.jsp?did=59149&prodName=SSM3J64CTC
SSM3J64CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 17897 Stücke:
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28+0.77 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
5000+0.15 EUR
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SSM3J65CTC,L3F SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC
SSM3J65CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
auf Bestellung 20000 Stücke:
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AnzahlPrivatkunde
10000+0.14 EUR
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SSM3J65CTC,L3F SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC
SSM3J65CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
auf Bestellung 26774 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
41+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.17 EUR
5000+0.15 EUR
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2SD1223,L1XGQ(O 2SD1223_datasheet_en_20131101.pdf?did=20861&prodName=2SD1223
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN DARL PWMOLD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR3UG285A,LF docget.jsp?did=59176&prodName=TCR3UG285A
TCR3UG285A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA 4WCSPF
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TCR3UG285A,LF docget.jsp?did=59176&prodName=TCR3UG285A
TCR3UG285A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA 4WCSPF
auf Bestellung 9785 Stücke:
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TCR3UG28A,LF TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A
TCR3UG28A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR3UG28A,LF TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A
TCR3UG28A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 4898 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
29+0.73 EUR
32+0.67 EUR
100+0.49 EUR
250+0.45 EUR
500+0.37 EUR
1000+0.27 EUR
2500+0.25 EUR
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TLP185(V4GBTL,SE docget.jsp?did=14111&prodName=TLP185(SE
TLP185(V4GBTL,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS W/BASE 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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CUHS15S30,H3F CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30
CUHS15S30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
30000+0.15 EUR
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CUHS15S30,H3F CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30
CUHS15S30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 41492 Stücke:
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31+0.69 EUR
40+0.54 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
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TLP161G(T7TL,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T7TR,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T5TL,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(TPL,U,C,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT7,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT5,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP628-2(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TK190U65Z,RQ docget.jsp?did=69977&prodName=TK190U65Z
TK190U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Produkt ist nicht verfügbar
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TC7QPB9307FK(EL) docget.jsp?did=57137&prodName=TC7QPB9307FK
TC7QPB9307FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
Produkt ist nicht verfügbar
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TC7QPB9307FK(EL) docget.jsp?did=57137&prodName=TC7QPB9307FK
TC7QPB9307FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
auf Bestellung 2149 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.44 EUR
21+1.02 EUR
25+0.93 EUR
100+0.81 EUR
250+0.75 EUR
500+0.73 EUR
1000+0.71 EUR
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SSM3J377R,LXHF docget.jsp?did=59203&prodName=SSM3J377R
SSM3J377R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
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SSM3J377R,LXHF docget.jsp?did=59203&prodName=SSM3J377R
SSM3J377R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 14850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
45+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.19 EUR
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TCKE805NA,RF docget.jsp?did=139443&prodName=TCKE805NA
TCKE805NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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TCKE805NA,RF docget.jsp?did=139443&prodName=TCKE805NA
TCKE805NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 2329 Stücke:
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AnzahlPrivatkunde
8+2.92 EUR
10+2.14 EUR
25+1.94 EUR
100+1.73 EUR
250+1.62 EUR
500+1.56 EUR
1000+1.55 EUR
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SSM3K44MFV,L3F docget.jsp?did=363&prodName=SSM3K44MFV
SSM3K44MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 32000 Stücke:
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AnzahlPrivatkunde
8000+0.074 EUR
24000+0.063 EUR
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SSM3K44MFV,L3F docget.jsp?did=363&prodName=SSM3K44MFV
SSM3K44MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 34766 Stücke:
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50+0.42 EUR
80+0.26 EUR
113+0.19 EUR
130+0.17 EUR
500+0.12 EUR
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TLX9376(TPL,F docget.jsp?did=53145&prodName=TLX9376
TLX9376(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+3.45 EUR
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TLX9376(TPL,F docget.jsp?did=53145&prodName=TLX9376
TLX9376(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
auf Bestellung 5910 Stücke:
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3+8.02 EUR
10+5.68 EUR
100+4.65 EUR
500+3.92 EUR
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TCK22946G,LF TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G
TCK22946G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Tape & Reel (TR)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Supplier Device Package: 6-WCSPE (0.80x1.2)
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge
Part Status: Active
Produkt ist nicht verfügbar
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TCK22946G,LF TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G
TCK22946G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge
Packaging: Cut Tape (CT)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Supplier Device Package: 6-WCSPE (0.80x1.2)
auf Bestellung 1660 Stücke:
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24+0.9 EUR
27+0.77 EUR
100+0.55 EUR
500+0.43 EUR
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RN1107,LF(CT RN1107,8,9.pdf
RN1107,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1107,LF(CT RN1107,8,9.pdf
RN1107,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
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TLP512(HITACHI,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN2117(TE85L,F) docget.jsp?did=18859&prodName=RN2117
RN2117(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN2117(TE85L,F) docget.jsp?did=18859&prodName=RN2117
RN2117(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 2950 Stücke:
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26+0.82 EUR
32+0.67 EUR
100+0.36 EUR
500+0.24 EUR
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74VHCV541FT docget.jsp?did=15531&prodName=74VHCV541FT
74VHCV541FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 16mA, 16mA
Number of Bits per Element: 8
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.35 EUR
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74VHCV541FT docget.jsp?did=15531&prodName=74VHCV541FT
74VHCV541FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 16mA, 16mA
Number of Bits per Element: 8
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5928 Stücke:
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AnzahlPrivatkunde
14+1.57 EUR
23+0.94 EUR
27+0.77 EUR
100+0.6 EUR
250+0.5 EUR
500+0.44 EUR
1000+0.39 EUR
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TCK401G,LF docget.jsp?did=59174&prodName=TCK401G
TCK401G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
auf Bestellung 50000 Stücke:
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AnzahlPrivatkunde
5000+0.46 EUR
10000+0.45 EUR
25000+0.44 EUR
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TCK401G,LF docget.jsp?did=59174&prodName=TCK401G
TCK401G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
auf Bestellung 56940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
28+0.76 EUR
31+0.68 EUR
100+0.6 EUR
250+0.55 EUR
500+0.52 EUR
1000+0.5 EUR
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TCK402G,LF TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G
TCK402G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TCK402G,LF TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G
TCK402G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TK750A60F,S4X TK750A60F_datasheet_en_20180925.pdf?did=59772&prodName=TK750A60F
TK750A60F,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
auf Bestellung 407 Stücke:
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7+3.33 EUR
10+2.12 EUR
50+1.58 EUR
100+1.42 EUR
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CVJ10F30,LF docget.jsp?did=13914&prodName=CVJ10F30
CVJ10F30,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CVJ10F30,LF docget.jsp?did=13914&prodName=CVJ10F30
CVJ10F30,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
auf Bestellung 386 Stücke:
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AnzahlPrivatkunde
27+0.8 EUR
36+0.6 EUR
100+0.37 EUR
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TLP2955(F)
TLP2955(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER DIP8 THROUGH-HOLE
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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TK160F10N1L,LXGQ TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L
TK160F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 375W (Tc)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.3 EUR
3000+3.05 EUR
Mindestbestellmenge: 1000 Stücke
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