Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13522) > Seite 150 nach 226
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RN1706,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1706,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV Part Status: Active |
auf Bestellung 8094 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1703,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: USV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN1703,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: USV |
auf Bestellung 2940 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1709,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOHPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: USV |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1709,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOHPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: USV |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3UM09A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 0.9V 300MA 4-DFNPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 580 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 0.9V Control Features: Current Limit, Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.273V @ 300mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TCR3UM09A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 0.9V 300MA 4-DFNPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 580 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 0.9V Control Features: Current Limit, Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.273V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 1206 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLP750(D4-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(NEMIC-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4-YASK,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4SHR-OT4,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4-TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4MAT-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4-O-TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4-O-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4-O,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4-O-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(NEMIC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP750(D4-O-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP383(BL-TPL,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP383(E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP383(D4-GB,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP383(GB,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP383(BL,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP383(TPL,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLP383(D4,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DSF01S30SC,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 100MA SC2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TB62215AHQ,8 | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPLR 25V 25HZIPPackaging: Tube Package / Case: 25-SIP Formed Leads Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 25-HZIP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TB67H302HG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 8V-42V 25HZIP Packaging: Tube Package / Case: 25-SIP Formed Leads Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 4.5A Interface: Parallel, PWM Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 8V ~ 42V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 8V ~ 42V Supplier Device Package: 25-HZIP Motor Type - AC, DC: Brushed DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TB62213AHQ,8 | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPLR 25V 25HZIPPackaging: Tube Package / Case: 25-SIP Formed Leads Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.4A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 25-HZIP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TB67S141HG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TB62213AHQ | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TB62215AHQ | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP Packaging: Tray Package / Case: 25-SIP Formed Leads Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 25-HZIP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GT8G133(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: IGBT 400V 600MW 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A Supplier Device Package: 8-TSSOP Td (on/off) @ 25°C: 1.7µs/2µs Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector Pulsed (Icm): 150 A Power - Max: 600 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN2103,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN2103,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN2103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN2103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
auf Bestellung 6790 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2103MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TJ60S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TJ60S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V |
auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7SZ34AFS,L3J(T | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 5.5V FSVPackaging: Tape & Reel (TR) Package / Case: SOT-953 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: fSV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HDKGB13A2A01T | Toshiba Semiconductor and Storage |
Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM Packaging: Bulk Size / Dimension: 100.45mm x 69.85mm x 9.50mm Memory Size: 1TB Memory Type: Magnetic Disk (HDD) Type: SATA III Weight: 4.13 oz (117 g) Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V Form Factor: 2.5" Part Status: Active |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3823(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3A 0-100V |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SSM3K341R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 60V 6A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K341R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 60V 6A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 31795 Stücke: Lieferzeit 10-14 Tag (e) |
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| TD62783AFNG(O,S) | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVER 8/0 18SSOP Packaging: Tube Package / Case: 18-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Number of Drivers/Receivers: 8/0 Supplier Device Package: 18-SSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TD62783AFG,S | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVER 8/0 18SOPPackaging: Tube Package / Case: 18-SOIC (0.276", 7.00mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Number of Drivers/Receivers: 8/0 Supplier Device Package: 18-SOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TD62783APG,J,S | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVER 8/0 18DIP Packaging: Tube Package / Case: 18-DIP (0.300", 7.62mm) Mounting Type: Through Hole Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Number of Drivers/Receivers: 8/0 Supplier Device Package: 18-DIP Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TD62783AFG,S,EL | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVER 8/0 18SOPPackaging: Tube Package / Case: 18-SOIC (0.276", 7.00mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Number of Drivers/Receivers: 8/0 Supplier Device Package: 18-SOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TD62783AFNG,S,EL | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVER 8/0 18SSOP Packaging: Tube Package / Case: 18-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Number of Drivers/Receivers: 8/0 Supplier Device Package: 18-SSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TC62D722CFNG | Toshiba Semiconductor and Storage |
Description: IC LED DRVR LINEAR 90MA 24HTSSOPPackaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Voltage - Output: 17V Mounting Type: Surface Mount Number of Outputs: 16 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Current - Output / Channel: 90mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-HTSSOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SSM6N44FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLP781F(D4GRH-T7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TK55S10N1,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 55A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK55S10N1,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 55A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8742 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1706,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.073 EUR |
| 6000+ | 0.065 EUR |
| RN1706,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
auf Bestellung 8094 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 79+ | 0.23 EUR |
| 126+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.091 EUR |
| RN1703,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN1703,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 56+ | 0.32 EUR |
| 115+ | 0.15 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.089 EUR |
| RN1709,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.08 EUR |
| RN1709,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 0.4 EUR |
| 73+ | 0.24 EUR |
| 118+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.097 EUR |
| TCR3UM09A,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TCR3UM09A,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 1206 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.88 EUR |
| 34+ | 0.52 EUR |
| 42+ | 0.43 EUR |
| 100+ | 0.32 EUR |
| 250+ | 0.27 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| TLP750(D4-TP1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(NEMIC-LF2,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4-YASK,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4SHR-OT4,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4-TP4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4MAT-LF2,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4-O-TP4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4-LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4-LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4-O-LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4-O,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4-O-LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(NEMIC,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP750(D4-O-TP1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP383(BL-TPL,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP383(E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP383(D4-GB,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP383(GB,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP383(BL,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP383(TPL,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP383(D4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSF01S30SC,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TB62215AHQ,8 |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TB67H302HG |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 8V-42V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4.5A
Interface: Parallel, PWM
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 8V ~ 42V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 42V
Supplier Device Package: 25-HZIP
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 8V-42V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4.5A
Interface: Parallel, PWM
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 8V ~ 42V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 42V
Supplier Device Package: 25-HZIP
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TB62213AHQ,8 |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TB67S141HG |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TB62213AHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TB62215AHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Packaging: Tray
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Packaging: Tray
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GT8G133(TE12L,Q) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 400V 600MW 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
Supplier Device Package: 8-TSSOP
Td (on/off) @ 25°C: 1.7µs/2µs
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 600 mW
Description: IGBT 400V 600MW 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
Supplier Device Package: 8-TSSOP
Td (on/off) @ 25°C: 1.7µs/2µs
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 600 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN2103,LF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN2103,LF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN2103MFV,L3F(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN2103MFV,L3F(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6790 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 0.3 EUR |
| 65+ | 0.27 EUR |
| 118+ | 0.15 EUR |
| 500+ | 0.092 EUR |
| 1000+ | 0.063 EUR |
| 2000+ | 0.053 EUR |
| RN2103MFV,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TJ60S04M3L,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Description: MOSFET P-CH 40V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TJ60S04M3L,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Description: MOSFET P-CH 40V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.18 EUR |
| 10+ | 1.78 EUR |
| TC7SZ34AFS,L3J(T |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 5.5V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: fSV
Description: IC BUFFER NON-INVERTING 5.5V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: fSV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HDKGB13A2A01T |
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Weight: 4.13 oz (117 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Weight: 4.13 oz (117 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 118.69 EUR |
| 10+ | 107.56 EUR |
| TLP3823(F |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Description: SSR RELAY SPST-NO 3A 0-100V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SSM3K341R,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |
| 9000+ | 0.34 EUR |
| 15000+ | 0.32 EUR |
| 21000+ | 0.31 EUR |
| 30000+ | 0.3 EUR |
| SSM3K341R,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 31795 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 19+ | 0.98 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| TD62783AFNG(O,S) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TD62783AFG,S |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TD62783APG,J,S |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-DIP
Part Status: Obsolete
Description: IC TRANSCEIVER 8/0 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-DIP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TD62783AFG,S,EL |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TD62783AFNG,S,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC62D722CFNG |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SSM6N44FU,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.096 EUR |
| 6000+ | 0.086 EUR |
| 9000+ | 0.081 EUR |
| TLP781F(D4GRH-T7,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TK55S10N1,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 1 EUR |
| TK55S10N1,LXHQ |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8742 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.2 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.12 EUR |




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