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TK125V65Z,LQ TK125V65Z,LQ Toshiba Semiconductor and Storage docget.jsp?did=67738&prodName=TK125V65Z Description: MOSFET N-CH 650V 24A 5DFN
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+4.08 EUR
Mindestbestellmenge: 2500
TK125V65Z,LQ TK125V65Z,LQ Toshiba Semiconductor and Storage docget.jsp?did=67738&prodName=TK125V65Z Description: MOSFET N-CH 650V 24A 5DFN
auf Bestellung 12414 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.13 EUR
10+ 7.29 EUR
100+ 5.98 EUR
500+ 5.09 EUR
1000+ 4.29 EUR
Mindestbestellmenge: 3
TJ30S06M3L,LXHQ TJ30S06M3L,LXHQ Toshiba Semiconductor and Storage TJ30S06M3L_datasheet_en_20200624.pdf?did=22571&prodName=TJ30S06M3L Description: MOSFET P-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.78 EUR
Mindestbestellmenge: 2000
TJ30S06M3L,LXHQ TJ30S06M3L,LXHQ Toshiba Semiconductor and Storage TJ30S06M3L_datasheet_en_20200624.pdf?did=22571&prodName=TJ30S06M3L Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
auf Bestellung 3952 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.87 EUR
12+ 1.53 EUR
100+ 1.19 EUR
500+ 1.01 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 10
TCR3UG18A,LF TCR3UG18A,LF Toshiba Semiconductor and Storage TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A Description: IC REG LINEAR 1.8V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.457V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.2 EUR
10000+ 0.19 EUR
25000+ 0.17 EUR
Mindestbestellmenge: 5000
TCR3UG18A,LF TCR3UG18A,LF Toshiba Semiconductor and Storage TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A Description: IC REG LINEAR 1.8V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.457V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 66988 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
29+ 0.61 EUR
32+ 0.56 EUR
100+ 0.41 EUR
250+ 0.38 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
2500+ 0.21 EUR
Mindestbestellmenge: 24
TCR3UG33A,LF TCR3UG33A,LF Toshiba Semiconductor and Storage TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.2 EUR
10000+ 0.19 EUR
Mindestbestellmenge: 5000
TCR3UG33A,LF TCR3UG33A,LF Toshiba Semiconductor and Storage TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 17160 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
29+ 0.61 EUR
32+ 0.56 EUR
100+ 0.41 EUR
250+ 0.38 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
2500+ 0.21 EUR
Mindestbestellmenge: 24
TLP240A(F TLP240A(F Toshiba Semiconductor and Storage TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 500 mA
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Produkt ist nicht verfügbar
TLP240A(LF1,F TLP240A(LF1,F Toshiba Semiconductor and Storage TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Produkt ist nicht verfügbar
TB6615PG,8 TB6615PG,8 Toshiba Semiconductor and Storage Description: STEPPING MOTOR DRIVER IC PB-FREE
Packaging: Tray
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 400mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 0V ~ 26V
Supplier Device Package: 16-DIP
Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.77 EUR
10+ 3.4 EUR
Mindestbestellmenge: 5
TBD62381AFWG,EL TBD62381AFWG,EL Toshiba Semiconductor and Storage TBD62381AFNG_datasheet_en_20170324.pdf?did=58145&prodName=TBD62381AFNG Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.15 EUR
Mindestbestellmenge: 1000
TBD62381AFWG,EL TBD62381AFWG,EL Toshiba Semiconductor and Storage TBD62381AFNG_datasheet_en_20170324.pdf?did=58145&prodName=TBD62381AFNG Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
10+ 2.14 EUR
100+ 1.66 EUR
500+ 1.41 EUR
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TCR3UM175A,LF TCR3UM175A,LF Toshiba Semiconductor and Storage docget.jsp?did=63293&prodName=TCR3UM085A Description: IC REG LINEAR 1.75V 300MA 4DFN
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR3UM175A,LF TCR3UM175A,LF Toshiba Semiconductor and Storage docget.jsp?did=63293&prodName=TCR3UM085A Description: IC REG LINEAR 1.75V 300MA 4DFN
auf Bestellung 19860 Stücke:
Lieferzeit 10-14 Tag (e)
TCR5BM11,L3F TCR5BM11,L3F Toshiba Semiconductor and Storage docget.jsp?did=63493&prodName=TCR5BM11 Description: IC REG LINEAR 1.1V 500MA 5DFNB
Produkt ist nicht verfügbar
TCR5BM11,L3F TCR5BM11,L3F Toshiba Semiconductor and Storage docget.jsp?did=63493&prodName=TCR5BM11 Description: IC REG LINEAR 1.1V 500MA 5DFNB
auf Bestellung 9825 Stücke:
Lieferzeit 10-14 Tag (e)
SSM5H16TU,LF SSM5H16TU,LF Toshiba Semiconductor and Storage docget.jsp?did=1898&prodName=SSM5H16TU Description: MOSFET N-CH 30V 1.9A UFV
Produkt ist nicht verfügbar
SSM5H16TU,LF SSM5H16TU,LF Toshiba Semiconductor and Storage docget.jsp?did=1898&prodName=SSM5H16TU Description: MOSFET N-CH 30V 1.9A UFV
auf Bestellung 2510 Stücke:
Lieferzeit 10-14 Tag (e)
TJ8S06M3L,LXHQ TJ8S06M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=22588&prodName=TJ8S06M3L Description: MOSFET P-CH 60V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Produkt ist nicht verfügbar
TJ8S06M3L,LXHQ TJ8S06M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=22588&prodName=TJ8S06M3L Description: MOSFET P-CH 60V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Produkt ist nicht verfügbar
TJ10S04M3L,LXHQ TJ10S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11298&prodName=TJ10S04M3L Description: MOSFET P-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.58 EUR
Mindestbestellmenge: 2000
TJ10S04M3L,LXHQ TJ10S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11298&prodName=TJ10S04M3L Description: MOSFET P-CH 40V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
14+ 1.32 EUR
100+ 0.92 EUR
500+ 0.77 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 12
CUHS15F30,H3F CUHS15F30,H3F Toshiba Semiconductor and Storage CUHS15F30_datasheet_en_20190831.pdf?did=66021&prodName=CUHS15F30 Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
CUHS15F30,H3F CUHS15F30,H3F Toshiba Semiconductor and Storage CUHS15F30_datasheet_en_20190831.pdf?did=66021&prodName=CUHS15F30 Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 8650 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
XPW6R30ANB,L1XHQ XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68787&prodName=XPW6R30ANB Description: MOSFET N-CH 100V 45A 8DSOP
Produkt ist nicht verfügbar
XPW6R30ANB,L1XHQ XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68787&prodName=XPW6R30ANB Description: MOSFET N-CH 100V 45A 8DSOP
auf Bestellung 3043 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.68 EUR
10+ 3.3 EUR
100+ 2.65 EUR
500+ 2.18 EUR
1000+ 1.81 EUR
2000+ 1.7 EUR
Mindestbestellmenge: 5
XPH6R30ANB,L1XHQ XPH6R30ANB,L1XHQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 100V 45A 8SOP
Produkt ist nicht verfügbar
XPH6R30ANB,L1XHQ XPH6R30ANB,L1XHQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 100V 45A 8SOP
auf Bestellung 9985 Stücke:
Lieferzeit 10-14 Tag (e)
CRS20I40B(TE85L,QM Toshiba Semiconductor and Storage docget.jsp?did=15106&prodName=CRS20I40B Description: DIODE SCHOTTKY 40V 2A S-FLAT
Produkt ist nicht verfügbar
CMS20I40A(TE12L,QM Toshiba Semiconductor and Storage docget.jsp?did=15141&prodName=CMS20I40A Description: DIODE SCHOTTKY 40V 2A M-FLAT
Produkt ist nicht verfügbar
TK40S06N1L,LXHQ TK40S06N1L,LXHQ Toshiba Semiconductor and Storage TK40S06N1L_datasheet_en_20200624.pdf?did=30110&prodName=TK40S06N1L Description: MOSFET N-CH 60V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Produkt ist nicht verfügbar
TK40S06N1L,LXHQ TK40S06N1L,LXHQ Toshiba Semiconductor and Storage TK40S06N1L_datasheet_en_20200624.pdf?did=30110&prodName=TK40S06N1L Description: MOSFET N-CH 60V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
13+ 1.37 EUR
100+ 1.07 EUR
500+ 0.91 EUR
Mindestbestellmenge: 11
2SC5886A,L1XHQ(O Toshiba Semiconductor and Storage 2SC5886A_datasheet_en_20131101.pdf?did=4354&prodName=2SC5886A Description: TRANSISTOR NPN BIPO PWMOLD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
TPCC8105,L1Q(CM Toshiba Semiconductor and Storage Description: MOSFET P-CH 30V 23A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Produkt ist nicht verfügbar
TLP2761(D4-LF4,E Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
TLP2761(D4-TP4,E TLP2761(D4-TP4,E Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
TLP2761(LF4,E Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
TLP2761(TP4,E TLP2761(TP4,E Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
TCR2LE31,LM TCR2LE31,LM Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE31 Description: IC REG LINEAR 3.1V 200MA ESV
Produkt ist nicht verfügbar
TCR2LE31,LM TCR2LE31,LM Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE31 Description: IC REG LINEAR 3.1V 200MA ESV
auf Bestellung 5941 Stücke:
Lieferzeit 10-14 Tag (e)
XPN12006NC,L1XHQ XPN12006NC,L1XHQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.76 EUR
Mindestbestellmenge: 5000
XPN12006NC,L1XHQ XPN12006NC,L1XHQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9952 Stücke:
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10+1.92 EUR
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TLP750F(D4-TP4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
CUHS15S40,H3F CUHS15S40,H3F Toshiba Semiconductor and Storage CUHS15S40_datasheet_en_20190905.pdf?did=66025&prodName=CUHS15S40 Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 3000 Stücke:
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CUHS15S40,H3F CUHS15S40,H3F Toshiba Semiconductor and Storage CUHS15S40_datasheet_en_20190905.pdf?did=66025&prodName=CUHS15S40 Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 5741 Stücke:
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24+0.74 EUR
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TC7WU04FK,LF TC7WU04FK,LF Toshiba Semiconductor and Storage docget.jsp?did=20208&prodName=TC7WU04FK Description: IC INVERTER 3CH 3-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 3000
CLS10F40,L3F CLS10F40,L3F Toshiba Semiconductor and Storage CLS10F40_datasheet_en_20230228.pdf?did=63451&prodName=CLS10F40 Description: DIODE SCHOTTKY 40V 1A CL2E
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CL2E
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
auf Bestellung 90000 Stücke:
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10000+0.18 EUR
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Mindestbestellmenge: 10000
CLS10F40,L3F CLS10F40,L3F Toshiba Semiconductor and Storage CLS10F40_datasheet_en_20230228.pdf?did=63451&prodName=CLS10F40 Description: DIODE SCHOTTKY 40V 1A CL2E
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CL2E
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
auf Bestellung 107419 Stücke:
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24+0.76 EUR
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74VHC20FT 74VHC20FT Toshiba Semiconductor and Storage Description: IC GATE NAND 2CH 4-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 4
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.16 EUR
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12500+ 0.14 EUR
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Mindestbestellmenge: 2500
74VHC20FT 74VHC20FT Toshiba Semiconductor and Storage Description: IC GATE NAND 2CH 4-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 4
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 29203 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
33+ 0.54 EUR
37+ 0.49 EUR
100+ 0.34 EUR
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1000+ 0.18 EUR
Mindestbestellmenge: 25
TCR2EF19,LM(CT TCR2EF19,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=13794&prodName=TCR2EF13 Description: IC REG LINEAR 1.9V 200MA SMV
Produkt ist nicht verfügbar
TCR2EF19,LM(CT TCR2EF19,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=13794&prodName=TCR2EF13 Description: IC REG LINEAR 1.9V 200MA SMV
auf Bestellung 2759 Stücke:
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30+0.6 EUR
40+ 0.45 EUR
45+ 0.39 EUR
100+ 0.26 EUR
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SSM6P47NU,LF SSM6P47NU,LF Toshiba Semiconductor and Storage docget.jsp?did=2660&prodName=SSM6P47NU Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
Mindestbestellmenge: 3000
SSM6P47NU,LF SSM6P47NU,LF Toshiba Semiconductor and Storage docget.jsp?did=2660&prodName=SSM6P47NU Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
32+ 0.57 EUR
100+ 0.39 EUR
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TC7WP3125FK,LF(CT TC7WP3125FK,LF(CT Toshiba Semiconductor and Storage Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000
TC7WP3125FK,LF(CT TC7WP3125FK,LF(CT Toshiba Semiconductor and Storage Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 5795 Stücke:
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22+0.83 EUR
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32+ 0.56 EUR
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TLP785F(GB-LF7,F TLP785F(GB-LF7,F Toshiba Semiconductor and Storage TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F Description: PHOTOCOUPLER TRANS OUT
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
TLP785F(D4,F TLP785F(D4,F Toshiba Semiconductor and Storage TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F Description: PHOTOCOUPLER TRANS OUT
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
TLP785F(D4TEET7F TLP785F(D4TEET7F Toshiba Semiconductor and Storage TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F Description: PHOTOCOUPLER TRANS OUT
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
TK125V65Z,LQ docget.jsp?did=67738&prodName=TK125V65Z
TK125V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 24A 5DFN
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+4.08 EUR
Mindestbestellmenge: 2500
TK125V65Z,LQ docget.jsp?did=67738&prodName=TK125V65Z
TK125V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 24A 5DFN
auf Bestellung 12414 Stücke:
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Anzahl Preis ohne MwSt
3+8.13 EUR
10+ 7.29 EUR
100+ 5.98 EUR
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1000+ 4.29 EUR
Mindestbestellmenge: 3
TJ30S06M3L,LXHQ TJ30S06M3L_datasheet_en_20200624.pdf?did=22571&prodName=TJ30S06M3L
TJ30S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
auf Bestellung 2000 Stücke:
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Anzahl Preis ohne MwSt
2000+0.78 EUR
Mindestbestellmenge: 2000
TJ30S06M3L,LXHQ TJ30S06M3L_datasheet_en_20200624.pdf?did=22571&prodName=TJ30S06M3L
TJ30S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
auf Bestellung 3952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.87 EUR
12+ 1.53 EUR
100+ 1.19 EUR
500+ 1.01 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 10
TCR3UG18A,LF TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A
TCR3UG18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.457V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.2 EUR
10000+ 0.19 EUR
25000+ 0.17 EUR
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TCR3UG18A,LF TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A
TCR3UG18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.457V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 66988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
29+ 0.61 EUR
32+ 0.56 EUR
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500+ 0.31 EUR
1000+ 0.23 EUR
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TCR3UG33A,LF TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A
TCR3UG33A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.2 EUR
10000+ 0.19 EUR
Mindestbestellmenge: 5000
TCR3UG33A,LF TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A
TCR3UG33A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 17160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
29+ 0.61 EUR
32+ 0.56 EUR
100+ 0.41 EUR
250+ 0.38 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
2500+ 0.21 EUR
Mindestbestellmenge: 24
TLP240A(F TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A
TLP240A(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 500 mA
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Produkt ist nicht verfügbar
TLP240A(LF1,F TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A
TLP240A(LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Produkt ist nicht verfügbar
TB6615PG,8
TB6615PG,8
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR DRIVER IC PB-FREE
Packaging: Tray
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 400mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 0V ~ 26V
Supplier Device Package: 16-DIP
Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.77 EUR
10+ 3.4 EUR
Mindestbestellmenge: 5
TBD62381AFWG,EL TBD62381AFNG_datasheet_en_20170324.pdf?did=58145&prodName=TBD62381AFNG
TBD62381AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.15 EUR
Mindestbestellmenge: 1000
TBD62381AFWG,EL TBD62381AFNG_datasheet_en_20170324.pdf?did=58145&prodName=TBD62381AFNG
TBD62381AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.62 EUR
10+ 2.14 EUR
100+ 1.66 EUR
500+ 1.41 EUR
Mindestbestellmenge: 7
TCR3UM175A,LF docget.jsp?did=63293&prodName=TCR3UM085A
TCR3UM175A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.75V 300MA 4DFN
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR3UM175A,LF docget.jsp?did=63293&prodName=TCR3UM085A
TCR3UM175A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.75V 300MA 4DFN
auf Bestellung 19860 Stücke:
Lieferzeit 10-14 Tag (e)
TCR5BM11,L3F docget.jsp?did=63493&prodName=TCR5BM11
TCR5BM11,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Produkt ist nicht verfügbar
TCR5BM11,L3F docget.jsp?did=63493&prodName=TCR5BM11
TCR5BM11,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
auf Bestellung 9825 Stücke:
Lieferzeit 10-14 Tag (e)
SSM5H16TU,LF docget.jsp?did=1898&prodName=SSM5H16TU
SSM5H16TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Produkt ist nicht verfügbar
SSM5H16TU,LF docget.jsp?did=1898&prodName=SSM5H16TU
SSM5H16TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
auf Bestellung 2510 Stücke:
Lieferzeit 10-14 Tag (e)
TJ8S06M3L,LXHQ docget.jsp?did=22588&prodName=TJ8S06M3L
TJ8S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Produkt ist nicht verfügbar
TJ8S06M3L,LXHQ docget.jsp?did=22588&prodName=TJ8S06M3L
TJ8S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Produkt ist nicht verfügbar
TJ10S04M3L,LXHQ docget.jsp?did=11298&prodName=TJ10S04M3L
TJ10S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.58 EUR
Mindestbestellmenge: 2000
TJ10S04M3L,LXHQ docget.jsp?did=11298&prodName=TJ10S04M3L
TJ10S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.53 EUR
14+ 1.32 EUR
100+ 0.92 EUR
500+ 0.77 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 12
CUHS15F30,H3F CUHS15F30_datasheet_en_20190831.pdf?did=66021&prodName=CUHS15F30
CUHS15F30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.13 EUR
Mindestbestellmenge: 3000
CUHS15F30,H3F CUHS15F30_datasheet_en_20190831.pdf?did=66021&prodName=CUHS15F30
CUHS15F30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 8650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
XPW6R30ANB,L1XHQ docget.jsp?did=68787&prodName=XPW6R30ANB
XPW6R30ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP
Produkt ist nicht verfügbar
XPW6R30ANB,L1XHQ docget.jsp?did=68787&prodName=XPW6R30ANB
XPW6R30ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP
auf Bestellung 3043 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.68 EUR
10+ 3.3 EUR
100+ 2.65 EUR
500+ 2.18 EUR
1000+ 1.81 EUR
2000+ 1.7 EUR
Mindestbestellmenge: 5
XPH6R30ANB,L1XHQ
XPH6R30ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8SOP
Produkt ist nicht verfügbar
XPH6R30ANB,L1XHQ
XPH6R30ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8SOP
auf Bestellung 9985 Stücke:
Lieferzeit 10-14 Tag (e)
CRS20I40B(TE85L,QM docget.jsp?did=15106&prodName=CRS20I40B
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A S-FLAT
Produkt ist nicht verfügbar
CMS20I40A(TE12L,QM docget.jsp?did=15141&prodName=CMS20I40A
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A M-FLAT
Produkt ist nicht verfügbar
TK40S06N1L,LXHQ TK40S06N1L_datasheet_en_20200624.pdf?did=30110&prodName=TK40S06N1L
TK40S06N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Produkt ist nicht verfügbar
TK40S06N1L,LXHQ TK40S06N1L_datasheet_en_20200624.pdf?did=30110&prodName=TK40S06N1L
TK40S06N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.67 EUR
13+ 1.37 EUR
100+ 1.07 EUR
500+ 0.91 EUR
Mindestbestellmenge: 11
2SC5886A,L1XHQ(O 2SC5886A_datasheet_en_20131101.pdf?did=4354&prodName=2SC5886A
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN BIPO PWMOLD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
TPCC8105,L1Q(CM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 23A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Produkt ist nicht verfügbar
TLP2761(D4-LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
TLP2761(D4-TP4,E
TLP2761(D4-TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
TLP2761(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
TLP2761(TP4,E
TLP2761(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
TCR2LE31,LM docget.jsp?did=28807&prodName=TCR2LE31
TCR2LE31,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.1V 200MA ESV
Produkt ist nicht verfügbar
TCR2LE31,LM docget.jsp?did=28807&prodName=TCR2LE31
TCR2LE31,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.1V 200MA ESV
auf Bestellung 5941 Stücke:
Lieferzeit 10-14 Tag (e)
XPN12006NC,L1XHQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
XPN12006NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.76 EUR
Mindestbestellmenge: 5000
XPN12006NC,L1XHQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
XPN12006NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.92 EUR
12+ 1.57 EUR
100+ 1.22 EUR
500+ 1.04 EUR
1000+ 0.84 EUR
2000+ 0.8 EUR
Mindestbestellmenge: 10
TLP750F(D4-TP4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
CUHS15S40,H3F CUHS15S40_datasheet_en_20190905.pdf?did=66025&prodName=CUHS15S40
CUHS15S40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.13 EUR
Mindestbestellmenge: 3000
CUHS15S40,H3F CUHS15S40_datasheet_en_20190905.pdf?did=66025&prodName=CUHS15S40
CUHS15S40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 5741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
TC7WU04FK,LF docget.jsp?did=20208&prodName=TC7WU04FK
TC7WU04FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 3000
CLS10F40,L3F CLS10F40_datasheet_en_20230228.pdf?did=63451&prodName=CLS10F40
CLS10F40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CL2E
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CL2E
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.18 EUR
30000+ 0.17 EUR
50000+ 0.16 EUR
Mindestbestellmenge: 10000
CLS10F40,L3F CLS10F40_datasheet_en_20230228.pdf?did=63451&prodName=CLS10F40
CLS10F40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CL2E
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CL2E
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
auf Bestellung 107419 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
31+ 0.59 EUR
100+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
5000+ 0.19 EUR
Mindestbestellmenge: 24
74VHC20FT
74VHC20FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 4-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 4
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.16 EUR
5000+ 0.15 EUR
12500+ 0.14 EUR
25000+ 0.13 EUR
Mindestbestellmenge: 2500
74VHC20FT
74VHC20FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 4-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 4
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 29203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
33+ 0.54 EUR
37+ 0.49 EUR
100+ 0.34 EUR
250+ 0.28 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 25
TCR2EF19,LM(CT docget.jsp?did=13794&prodName=TCR2EF13
TCR2EF19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA SMV
Produkt ist nicht verfügbar
TCR2EF19,LM(CT docget.jsp?did=13794&prodName=TCR2EF13
TCR2EF19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA SMV
auf Bestellung 2759 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
40+ 0.45 EUR
45+ 0.39 EUR
100+ 0.26 EUR
250+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 30
SSM6P47NU,LF docget.jsp?did=2660&prodName=SSM6P47NU
SSM6P47NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
Mindestbestellmenge: 3000
SSM6P47NU,LF docget.jsp?did=2660&prodName=SSM6P47NU
SSM6P47NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
32+ 0.57 EUR
100+ 0.39 EUR
500+ 0.31 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 27
TC7WP3125FK,LF(CT
TC7WP3125FK,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.18 EUR
Mindestbestellmenge: 3000
TC7WP3125FK,LF(CT
TC7WP3125FK,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 5795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
29+ 0.62 EUR
32+ 0.56 EUR
100+ 0.39 EUR
250+ 0.33 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 22
TLP785F(GB-LF7,F TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F
TLP785F(GB-LF7,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
TLP785F(D4,F TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F
TLP785F(D4,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
TLP785F(D4TEET7F TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F
TLP785F(D4TEET7F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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