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TODX2355(F) TODX2355(F) Toshiba Semiconductor and Storage TODX2355(F)_8-2-18.pdf Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.36 EUR
15+23.65 EUR
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2SC3672-O(T2ASH,FM 2SC3672-O(T2ASH,FM Toshiba Semiconductor and Storage 2SC3672_2010-03-10.pdf Description: TRANS NPN 100MA 300V SC71
Produkt ist nicht verfügbar
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TK110U65Z,RQ TK110U65Z,RQ Toshiba Semiconductor and Storage docget.jsp?did=69972&prodName=TK110U65Z Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+3.76 EUR
Mindestbestellmenge: 2000 Stücke
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TK110U65Z,RQ TK110U65Z,RQ Toshiba Semiconductor and Storage docget.jsp?did=69972&prodName=TK110U65Z Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 5927 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.69 EUR
10+7.12 EUR
50+5.59 EUR
100+5.09 EUR
500+4.61 EUR
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TK110P10PL,RQ TK110P10PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=60590&prodName=TK110P10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.74 EUR
5000+0.68 EUR
Mindestbestellmenge: 2500 Stücke
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TK110P10PL,RQ TK110P10PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=60590&prodName=TK110P10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 5574 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.76 EUR
12+1.75 EUR
100+1.15 EUR
500+0.9 EUR
1000+0.82 EUR
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TK11S10N1L,LXHQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 100V 11A DPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TK11S10N1L,LXHQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 100V 11A DPAK
Produkt ist nicht verfügbar
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CEZ36V,L3F CEZ36V,L3F Toshiba Semiconductor and Storage docget.jsp?did=69323&prodName=CEZ36V Description: TVS DIODE 36VWM 63VC ESC
auf Bestellung 8000 Stücke:
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8000+0.11 EUR
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CEZ36V,L3F CEZ36V,L3F Toshiba Semiconductor and Storage docget.jsp?did=69323&prodName=CEZ36V Description: TVS DIODE 36VWM 63VC ESC
auf Bestellung 15621 Stücke:
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30+0.71 EUR
36+0.58 EUR
100+0.31 EUR
500+0.2 EUR
1000+0.14 EUR
2000+0.12 EUR
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MSZ36V,LF MSZ36V,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ36V Description: TVS DIODE 36VWM 63VC SMINI
auf Bestellung 3000 Stücke:
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3000+0.14 EUR
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MSZ36V,LF MSZ36V,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ36V Description: TVS DIODE 36VWM 63VC SMINI
auf Bestellung 5897 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
32+0.65 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.15 EUR
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MUZ36V,LF MUZ36V,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ36V Description: TVS DIODE 36VWM 63VC USM
auf Bestellung 6000 Stücke:
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MUZ36V,LF MUZ36V,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ36V Description: TVS DIODE 36VWM 63VC USM
auf Bestellung 6000 Stücke:
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CUZ36V,H3F CUZ36V,H3F Toshiba Semiconductor and Storage docget.jsp?did=69335&prodName=CUZ36V Description: TVS DIODE 36VWM 63VC USC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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CUZ36V,H3F CUZ36V,H3F Toshiba Semiconductor and Storage docget.jsp?did=69335&prodName=CUZ36V Description: TVS DIODE 36VWM 63VC USC
auf Bestellung 1812 Stücke:
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KIA78DL05PI Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO 5V TO220
Produkt ist nicht verfügbar
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KIA78DL06PI Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO 6V TO220
Produkt ist nicht verfügbar
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KIA78DL08PI Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO 8V TO220
Produkt ist nicht verfügbar
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KIA78DL09PI Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO 9V TO220
Produkt ist nicht verfügbar
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KIA78DL10PI Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO 10V TO220
Produkt ist nicht verfügbar
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KIA78DL15PI Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO 15V TO220
Produkt ist nicht verfügbar
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7UL1T126FU,LF 7UL1T126FU,LF Toshiba Semiconductor and Storage docget.jsp?did=68932&prodName=7UL1T126FU Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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7UL1T126FU,LF 7UL1T126FU,LF Toshiba Semiconductor and Storage docget.jsp?did=68932&prodName=7UL1T126FU Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
auf Bestellung 4889 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
110+0.19 EUR
125+0.17 EUR
148+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.12 EUR
Mindestbestellmenge: 72 Stücke
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7UL1T125FU,LF 7UL1T125FU,LF Toshiba Semiconductor and Storage docget.jsp?did=68930&prodName=7UL1T125FU Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.1 EUR
9000+0.1 EUR
15000+0.099 EUR
Mindestbestellmenge: 3000 Stücke
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7UL1T125FU,LF 7UL1T125FU,LF Toshiba Semiconductor and Storage docget.jsp?did=68930&prodName=7UL1T125FU Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
auf Bestellung 19325 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
110+0.19 EUR
125+0.17 EUR
148+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.12 EUR
Mindestbestellmenge: 72 Stücke
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7UL2G126FK,LF 7UL2G126FK,LF Toshiba Semiconductor and Storage docget.jsp?did=68973&prodName=7UL2G126FK Description: IC BUFF 0.9V/3.6V US8
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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7UL2G126FK,LF 7UL2G126FK,LF Toshiba Semiconductor and Storage docget.jsp?did=68973&prodName=7UL2G126FK Description: IC BUFF 0.9V/3.6V US8
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
69+0.31 EUR
79+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 48 Stücke
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7UL2G125FK,LF 7UL2G125FK,LF Toshiba Semiconductor and Storage docget.jsp?did=68971&prodName=7UL2G125FK Description: IC BUFF 0.9V/3.6V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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7UL2G125FK,LF 7UL2G125FK,LF Toshiba Semiconductor and Storage docget.jsp?did=68971&prodName=7UL2G125FK Description: IC BUFF 0.9V/3.6V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 5376 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
69+0.31 EUR
79+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 48 Stücke
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SSM6K516NU,LF SSM6K516NU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
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SSM6K516NU,LF SSM6K516NU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
auf Bestellung 5845 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
30+0.71 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.31 EUR
Mindestbestellmenge: 25 Stücke
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SSM6K518NU,LF SSM6K518NU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
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SSM6K518NU,LF SSM6K518NU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
auf Bestellung 6148 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
30+0.71 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.31 EUR
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SSM6K517NU,LF SSM6K517NU,LF Toshiba Semiconductor and Storage docget.jsp?did=69320&prodName=SSM6K517NU Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.3 EUR
Mindestbestellmenge: 3000 Stücke
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SSM6K517NU,LF SSM6K517NU,LF Toshiba Semiconductor and Storage docget.jsp?did=69320&prodName=SSM6K517NU Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
auf Bestellung 3456 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.27 EUR
27+0.8 EUR
100+0.51 EUR
500+0.38 EUR
1000+0.35 EUR
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TB67B008FTG,EL TB67B008FTG,EL Toshiba Semiconductor and Storage TB67B008FTG_FNG_en_20190318.pdf Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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TB67B008FTG,EL TB67B008FTG,EL Toshiba Semiconductor and Storage TB67B008FTG_FNG_en_20190318.pdf Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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TB67B008FNG,EL TB67B008FNG,EL Toshiba Semiconductor and Storage TB67B008FTG_FNG_en_20190318.pdf Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
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TB67B008FNG,EL TB67B008FNG,EL Toshiba Semiconductor and Storage TB67B008FTG_FNG_en_20190318.pdf Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 1955 Stücke:
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TC7WPN3125FK,LF(CT TC7WPN3125FK,LF(CT Toshiba Semiconductor and Storage Description: IC BUS SWITCH 2 X 1:1 US8
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TC7WPN3125FK,LF(CT TC7WPN3125FK,LF(CT Toshiba Semiconductor and Storage Description: IC BUS SWITCH 2 X 1:1 US8
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SSM6N7002KFU,LXH SSM6N7002KFU,LXH Toshiba Semiconductor and Storage docget.jsp?did=30374&prodName=SSM6N7002KFU Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SSM6N7002KFU,LXH SSM6N7002KFU,LXH Toshiba Semiconductor and Storage docget.jsp?did=30374&prodName=SSM6N7002KFU Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TK155U65Z,RQ TK155U65Z,RQ Toshiba Semiconductor and Storage Description: DTMOS VI TOLL PD=150W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Produkt ist nicht verfügbar
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RN2112MFV,L3F RN2112MFV,L3F Toshiba Semiconductor and Storage RN2112MFV_datasheet_en_20190107.pdf?did=5886&prodName=RN2112MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
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RN2112MFV,L3F RN2112MFV,L3F Toshiba Semiconductor and Storage RN2112MFV_datasheet_en_20190107.pdf?did=5886&prodName=RN2112MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
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TOCP155K Toshiba Semiconductor and Storage Description: FIBER OPTIC TRANSMITTER
Produkt ist nicht verfügbar
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TOCP155K(SUMID) Toshiba Semiconductor and Storage Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TLP3547(TP1,F TLP3547(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=36853&prodName=TLP3547 Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
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TLP3547(TP1,F TLP3547(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=36853&prodName=TLP3547 Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
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TLP3556A(TP1,F TLP3556A(TP1,F Toshiba Semiconductor and Storage datasheet_en_20230529.pdf?did=60315 Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
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TLP3556A(TP1,F TLP3556A(TP1,F Toshiba Semiconductor and Storage datasheet_en_20230529.pdf?did=60315 Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 6513 Stücke:
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TLP3556(TP1,F) TLP3556(TP1,F) Toshiba Semiconductor and Storage TLP3556_datasheet_en_20200325.pdf?did=11952&prodName=TLP3556 Description: SSR RELAY SPST-NO 1A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 700 mOhms
Produkt ist nicht verfügbar
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SSM3J15FS,LF SSM3J15FS,LF Toshiba Semiconductor and Storage docget.jsp?did=22746&prodName=SSM3J15FS Description: MOSFET P-CH 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 16200 Stücke:
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SSM3J15FS,LF SSM3J15FS,LF Toshiba Semiconductor and Storage docget.jsp?did=22746&prodName=SSM3J15FS Description: MOSFET P-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 17595 Stücke:
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TPH7R006PL,L1Q TPH7R006PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55699&prodName=TPH7R006PL Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
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5000+0.63 EUR
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TPH7R006PL,L1Q TPH7R006PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55699&prodName=TPH7R006PL Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
auf Bestellung 23379 Stücke:
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50+1.2 EUR
100+1.07 EUR
500+0.83 EUR
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TB9057FG TB9057FG Toshiba Semiconductor and Storage TB9057FG_datasheet_en_20210118.pdf?did=65112&prodName=TB9057FG Description: AUTOMOTIVE MOTOR H-BRIDGE DRIVER
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Driver
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver
Voltage - Supply: 5V ~ 21V
Technology: Bi-CMOS
Supplier Device Package: 48-LQFP (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.8 EUR
10+14.68 EUR
25+13.65 EUR
100+12.52 EUR
250+11.98 EUR
500+11.65 EUR
1000+11.39 EUR
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TK190U65Z,RQ TK190U65Z,RQ Toshiba Semiconductor and Storage docget.jsp?did=69977&prodName=TK190U65Z Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
auf Bestellung 974 Stücke:
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3+7.69 EUR
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50+3.9 EUR
100+3.55 EUR
500+2.96 EUR
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TODX2355(F) TODX2355(F)_8-2-18.pdf
TODX2355(F)
Hersteller: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
auf Bestellung 15 Stücke:
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AnzahlPrivatkunde
1+31.36 EUR
15+23.65 EUR
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2SC3672-O(T2ASH,FM 2SC3672_2010-03-10.pdf
2SC3672-O(T2ASH,FM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100MA 300V SC71
Produkt ist nicht verfügbar
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TK110U65Z,RQ docget.jsp?did=69972&prodName=TK110U65Z
TK110U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+3.76 EUR
Mindestbestellmenge: 2000 Stücke
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TK110U65Z,RQ docget.jsp?did=69972&prodName=TK110U65Z
TK110U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 5927 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.69 EUR
10+7.12 EUR
50+5.59 EUR
100+5.09 EUR
500+4.61 EUR
Mindestbestellmenge: 2 Stücke
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TK110P10PL,RQ docget.jsp?did=60590&prodName=TK110P10PL
TK110P10PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.74 EUR
5000+0.68 EUR
Mindestbestellmenge: 2500 Stücke
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TK110P10PL,RQ docget.jsp?did=60590&prodName=TK110P10PL
TK110P10PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 5574 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.76 EUR
12+1.75 EUR
100+1.15 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 8 Stücke
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TK11S10N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TK11S10N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Produkt ist nicht verfügbar
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CEZ36V,L3F docget.jsp?did=69323&prodName=CEZ36V
CEZ36V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC ESC
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.11 EUR
Mindestbestellmenge: 8000 Stücke
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CEZ36V,L3F docget.jsp?did=69323&prodName=CEZ36V
CEZ36V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC ESC
auf Bestellung 15621 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
36+0.58 EUR
100+0.31 EUR
500+0.2 EUR
1000+0.14 EUR
2000+0.12 EUR
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MSZ36V,LF docget.jsp?did=69349&prodName=MSZ36V
MSZ36V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC SMINI
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
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MSZ36V,LF docget.jsp?did=69349&prodName=MSZ36V
MSZ36V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC SMINI
auf Bestellung 5897 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
32+0.65 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.15 EUR
Mindestbestellmenge: 27 Stücke
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MUZ36V,LF docget.jsp?did=69487&prodName=MUZ36V
MUZ36V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USM
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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MUZ36V,LF docget.jsp?did=69487&prodName=MUZ36V
MUZ36V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USM
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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CUZ36V,H3F docget.jsp?did=69335&prodName=CUZ36V
CUZ36V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CUZ36V,H3F docget.jsp?did=69335&prodName=CUZ36V
CUZ36V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USC
auf Bestellung 1812 Stücke:
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KIA78DL05PI
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 5V TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIA78DL06PI
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 6V TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIA78DL08PI
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 8V TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIA78DL09PI
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 9V TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIA78DL10PI
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 10V TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIA78DL15PI
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 15V TO220
Produkt ist nicht verfügbar
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7UL1T126FU,LF docget.jsp?did=68932&prodName=7UL1T126FU
7UL1T126FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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7UL1T126FU,LF docget.jsp?did=68932&prodName=7UL1T126FU
7UL1T126FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
auf Bestellung 4889 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
110+0.19 EUR
125+0.17 EUR
148+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.12 EUR
Mindestbestellmenge: 72 Stücke
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7UL1T125FU,LF docget.jsp?did=68930&prodName=7UL1T125FU
7UL1T125FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.1 EUR
9000+0.1 EUR
15000+0.099 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
7UL1T125FU,LF docget.jsp?did=68930&prodName=7UL1T125FU
7UL1T125FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
auf Bestellung 19325 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
110+0.19 EUR
125+0.17 EUR
148+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.12 EUR
Mindestbestellmenge: 72 Stücke
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7UL2G126FK,LF docget.jsp?did=68973&prodName=7UL2G126FK
7UL2G126FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 0.9V/3.6V US8
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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7UL2G126FK,LF docget.jsp?did=68973&prodName=7UL2G126FK
7UL2G126FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 0.9V/3.6V US8
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
69+0.31 EUR
79+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 48 Stücke
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7UL2G125FK,LF docget.jsp?did=68971&prodName=7UL2G125FK
7UL2G125FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 0.9V/3.6V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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7UL2G125FK,LF docget.jsp?did=68971&prodName=7UL2G125FK
7UL2G125FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 0.9V/3.6V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 5376 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
69+0.31 EUR
79+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 48 Stücke
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SSM6K516NU,LF
SSM6K516NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K516NU,LF
SSM6K516NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
auf Bestellung 5845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
30+0.71 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.31 EUR
Mindestbestellmenge: 25 Stücke
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SSM6K518NU,LF
SSM6K518NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K518NU,LF
SSM6K518NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
auf Bestellung 6148 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
30+0.71 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.31 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K517NU,LF docget.jsp?did=69320&prodName=SSM6K517NU
SSM6K517NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K517NU,LF docget.jsp?did=69320&prodName=SSM6K517NU
SSM6K517NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
auf Bestellung 3456 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
27+0.8 EUR
100+0.51 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67B008FTG,EL TB67B008FTG_FNG_en_20190318.pdf
TB67B008FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 10000 Stücke:
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5000+1.9 EUR
10000+1.88 EUR
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TB67B008FTG,EL TB67B008FTG_FNG_en_20190318.pdf
TB67B008FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 10337 Stücke:
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6+3.86 EUR
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TB67B008FNG,EL TB67B008FTG_FNG_en_20190318.pdf
TB67B008FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
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TB67B008FNG,EL TB67B008FTG_FNG_en_20190318.pdf
TB67B008FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.16 EUR
10+3.09 EUR
25+2.82 EUR
100+2.52 EUR
250+2.38 EUR
500+2.31 EUR
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TC7WPN3125FK,LF(CT
TC7WPN3125FK,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.21 EUR
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TC7WPN3125FK,LF(CT
TC7WPN3125FK,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 5999 Stücke:
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22+0.99 EUR
29+0.74 EUR
32+0.67 EUR
100+0.46 EUR
250+0.39 EUR
500+0.32 EUR
1000+0.24 EUR
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SSM6N7002KFU,LXH docget.jsp?did=30374&prodName=SSM6N7002KFU
SSM6N7002KFU,LXH
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSM6N7002KFU,LXH docget.jsp?did=30374&prodName=SSM6N7002KFU
SSM6N7002KFU,LXH
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1717 Stücke:
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AnzahlPrivatkunde
25+0.83 EUR
41+0.51 EUR
57+0.37 EUR
100+0.32 EUR
500+0.24 EUR
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TK155U65Z,RQ
TK155U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=150W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Produkt ist nicht verfügbar
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RN2112MFV,L3F RN2112MFV_datasheet_en_20190107.pdf?did=5886&prodName=RN2112MFV
RN2112MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
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RN2112MFV,L3F RN2112MFV_datasheet_en_20190107.pdf?did=5886&prodName=RN2112MFV
RN2112MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
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TOCP155K
Hersteller: Toshiba Semiconductor and Storage
Description: FIBER OPTIC TRANSMITTER
Produkt ist nicht verfügbar
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TOCP155K(SUMID)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TLP3547(TP1,F docget.jsp?did=36853&prodName=TLP3547
TLP3547(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+10.76 EUR
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TLP3547(TP1,F docget.jsp?did=36853&prodName=TLP3547
TLP3547(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
auf Bestellung 5944 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.57 EUR
10+13.85 EUR
25+13.23 EUR
50+12.78 EUR
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250+11.78 EUR
500+11.38 EUR
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TLP3556A(TP1,F datasheet_en_20230529.pdf?did=60315
TLP3556A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+4.62 EUR
3000+4.45 EUR
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TLP3556A(TP1,F datasheet_en_20230529.pdf?did=60315
TLP3556A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 6513 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.66 EUR
10+5.94 EUR
25+5.68 EUR
50+5.47 EUR
100+5.28 EUR
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500+4.88 EUR
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TLP3556(TP1,F) TLP3556_datasheet_en_20200325.pdf?did=11952&prodName=TLP3556
TLP3556(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 700 mOhms
Produkt ist nicht verfügbar
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SSM3J15FS,LF docget.jsp?did=22746&prodName=SSM3J15FS
SSM3J15FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 16200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.087 EUR
6000+0.077 EUR
9000+0.073 EUR
15000+0.068 EUR
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SSM3J15FS,LF docget.jsp?did=22746&prodName=SSM3J15FS
SSM3J15FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 17595 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.1 EUR
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TPH7R006PL,L1Q docget.jsp?did=55699&prodName=TPH7R006PL
TPH7R006PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.63 EUR
15000+0.56 EUR
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TPH7R006PL,L1Q docget.jsp?did=55699&prodName=TPH7R006PL
TPH7R006PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
auf Bestellung 23379 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.57 EUR
13+1.62 EUR
50+1.2 EUR
100+1.07 EUR
500+0.83 EUR
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TB9057FG TB9057FG_datasheet_en_20210118.pdf?did=65112&prodName=TB9057FG
TB9057FG
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE MOTOR H-BRIDGE DRIVER
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Driver
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver
Voltage - Supply: 5V ~ 21V
Technology: Bi-CMOS
Supplier Device Package: 48-LQFP (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.8 EUR
10+14.68 EUR
25+13.65 EUR
100+12.52 EUR
250+11.98 EUR
500+11.65 EUR
1000+11.39 EUR
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TK190U65Z,RQ docget.jsp?did=69977&prodName=TK190U65Z
TK190U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.69 EUR
10+5.05 EUR
50+3.9 EUR
100+3.55 EUR
500+2.96 EUR
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