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7UL2G125FK,LF 7UL2G125FK,LF Toshiba Semiconductor and Storage docget.jsp?did=69786&prodName=7UL2G125FK Description: IC BUFFER NON-INVERT 3.6V US8
Supplier Device Package: US8
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 2
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
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39+0.55 EUR
42+0.5 EUR
100+0.38 EUR
250+0.35 EUR
500+0.29 EUR
1000+0.21 EUR
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SSM6K516NU,LF SSM6K516NU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 30V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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SSM6K516NU,LF SSM6K516NU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 30V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
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SSM6K518NU,LF SSM6K518NU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 6A 6UDFNB
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
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SSM6K518NU,LF SSM6K518NU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
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SSM6K517NU,LF SSM6K517NU,LF Toshiba Semiconductor and Storage docget.jsp?did=69320&prodName=SSM6K517NU Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
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SSM6K517NU,LF SSM6K517NU,LF Toshiba Semiconductor and Storage docget.jsp?did=69320&prodName=SSM6K517NU Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
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TB67B008FTG,EL TB67B008FTG,EL Toshiba Semiconductor and Storage TB67B008FTG_FNG_en_20190318.pdf Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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TB67B008FTG,EL TB67B008FTG,EL Toshiba Semiconductor and Storage TB67B008FTG_FNG_en_20190318.pdf Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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TB67B008FNG,EL TB67B008FNG,EL Toshiba Semiconductor and Storage TB67B008FTG_FNG_en_20190318.pdf Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
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TB67B008FNG,EL TB67B008FNG,EL Toshiba Semiconductor and Storage TB67B008FTG_FNG_en_20190318.pdf Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 1965 Stücke:
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TC7WPN3125FK,LF(CT TC7WPN3125FK,LF(CT Toshiba Semiconductor and Storage Description: IC BUS SWITCH 2 X 1:1 US8
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TC7WPN3125FK,LF(CT TC7WPN3125FK,LF(CT Toshiba Semiconductor and Storage Description: IC BUS SWITCH 2 X 1:1 US8
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SSM6N7002KFU,LXH SSM6N7002KFU,LXH Toshiba Semiconductor and Storage docget.jsp?did=30374&prodName=SSM6N7002KFU Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SSM6N7002KFU,LXH SSM6N7002KFU,LXH Toshiba Semiconductor and Storage docget.jsp?did=30374&prodName=SSM6N7002KFU Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TK155U65Z,RQ TK155U65Z,RQ Toshiba Semiconductor and Storage Description: DTMOS VI TOLL PD=150W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Produkt ist nicht verfügbar
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TK155U65Z,RQ TK155U65Z,RQ Toshiba Semiconductor and Storage Description: DTMOS VI TOLL PD=150W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Produkt ist nicht verfügbar
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RN2112MFV,L3F RN2112MFV,L3F Toshiba Semiconductor and Storage RN2112MFV_datasheet_en_20190107.pdf?did=5886&prodName=RN2112MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
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RN2112MFV,L3F RN2112MFV,L3F Toshiba Semiconductor and Storage RN2112MFV_datasheet_en_20190107.pdf?did=5886&prodName=RN2112MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
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TOCP155K Toshiba Semiconductor and Storage Description: FIBER OPTIC TRANSMITTER
Produkt ist nicht verfügbar
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TOCP155K(SUMID) Toshiba Semiconductor and Storage Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TLP3547(TP1,F TLP3547(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=36853&prodName=TLP3547 Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 5 A
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
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TLP3547(TP1,F TLP3547(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=36853&prodName=TLP3547 Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 5 A
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
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TLP3556A(TP1,F TLP3556A(TP1,F Toshiba Semiconductor and Storage datasheet_en_20230529.pdf?did=60315 Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
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1500+4.61 EUR
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TLP3556A(TP1,F TLP3556A(TP1,F Toshiba Semiconductor and Storage datasheet_en_20230529.pdf?did=60315 Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
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TLP3556(TP1,F) TLP3556(TP1,F) Toshiba Semiconductor and Storage TLP3556_datasheet_en_20200325.pdf?did=11952&prodName=TLP3556 Description: SSR RELAY SPST-NO 1A 0-100V
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
On-State Resistance (Max): 700 mOhms
Voltage - Load: 0 V ~ 100 V
Supplier Device Package: 4-SMD
Load Current: 1 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.33VDC
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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SSM3J15FS,LF SSM3J15FS,LF Toshiba Semiconductor and Storage docget.jsp?did=22746&prodName=SSM3J15FS Description: MOSFET P-CH 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 16200 Stücke:
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3000+0.087 EUR
6000+0.077 EUR
9000+0.073 EUR
15000+0.068 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J15FS,LF SSM3J15FS,LF Toshiba Semiconductor and Storage docget.jsp?did=22746&prodName=SSM3J15FS Description: MOSFET P-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 17595 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.42 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.1 EUR
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TPH7R006PL,L1Q TPH7R006PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55699&prodName=TPH7R006PL Description: MOSFET N-CH 60V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 25000 Stücke:
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5000+0.61 EUR
10000+0.57 EUR
15000+0.55 EUR
25000+0.52 EUR
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TPH7R006PL,L1Q TPH7R006PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55699&prodName=TPH7R006PL Description: MOSFET N-CH 60V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 29133 Stücke:
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9+2.51 EUR
14+1.58 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.74 EUR
2000+0.68 EUR
Mindestbestellmenge: 9 Stücke
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TB9057FG TB9057FG Toshiba Semiconductor and Storage TB9057FG_datasheet_en_20210118.pdf?did=65112&prodName=TB9057FG Description: AUTOMOTIVE MOTOR H-BRIDGE DRIVER
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Driver
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver
Voltage - Supply: 5V ~ 21V
Technology: Bi-CMOS
Supplier Device Package: 48-LQFP (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
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2+20.73 EUR
10+18.72 EUR
25+17.85 EUR
80+15.51 EUR
250+14.8 EUR
500+13.49 EUR
1000+11.76 EUR
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TK190U65Z,RQ TK190U65Z,RQ Toshiba Semiconductor and Storage docget.jsp?did=69977&prodName=TK190U65Z Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
auf Bestellung 974 Stücke:
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3+7.71 EUR
10+5.06 EUR
100+3.55 EUR
500+2.96 EUR
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TPHR6503PL1,LQ TPHR6503PL1,LQ Toshiba Semiconductor and Storage TPHR6503PL1_datasheet_en_20200626.pdf?did=69019&prodName=TPHR6503PL1 Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 5000 Stücke:
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5000+1.8 EUR
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TPHR6503PL1,LQ TPHR6503PL1,LQ Toshiba Semiconductor and Storage TPHR6503PL1_datasheet_en_20200626.pdf?did=69019&prodName=TPHR6503PL1 Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 8788 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.18 EUR
10+4.01 EUR
100+2.78 EUR
500+2.25 EUR
1000+2.19 EUR
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TK190A65Z,S4X TK190A65Z,S4X Toshiba Semiconductor and Storage docget.jsp?did=67746&prodName=TK190A65Z Description: MOSFET N-CH 650V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
auf Bestellung 37 Stücke:
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3+7.54 EUR
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TK090A65Z,S4X TK090A65Z,S4X Toshiba Semiconductor and Storage TK090A65Z_datasheet_en_20181120.pdf?did=63648&prodName=TK090A65Z Description: MOSFET N-CH 650V 30A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 48 Stücke:
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3+8.65 EUR
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TLP5231(D4-TP,E TLP5231(D4-TP,E Toshiba Semiconductor and Storage TLP5231_Prelim_DS.pdf Description: OPTOISO 5KV 2CH GATE DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 300ns, 300ns
Pulse Width Distortion (Max): 150ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 21V ~ 30V
auf Bestellung 1500 Stücke:
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1500+5.15 EUR
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TLP5231(D4-TP,E TLP5231(D4-TP,E Toshiba Semiconductor and Storage TLP5231_Prelim_DS.pdf Description: OPTOISO 5KV 2CH GATE DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 300ns, 300ns
Pulse Width Distortion (Max): 150ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 21V ~ 30V
auf Bestellung 2452 Stücke:
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3+10.34 EUR
10+7.71 EUR
100+6.16 EUR
500+5.49 EUR
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TLP523-2(YASK,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(SHRP-MA,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(ADCHI-PP,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(TOJS,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP523(PP,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-2(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-2(MBS,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-2(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN1303,LF RN1303,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1303 Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
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RN1303,LF RN1303,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1303 Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 2840 Stücke:
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TLX9000(TPL,F TLX9000(TPL,F Toshiba Semiconductor and Storage TLX9000_datasheet_en_20190628.pdf?did=53129&prodName=TLX9000 Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 900% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 40V
Turn On / Turn Off Time (Typ): 15µs, 50µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TLX9000(TPL,F TLX9000(TPL,F Toshiba Semiconductor and Storage TLX9000_datasheet_en_20190628.pdf?did=53129&prodName=TLX9000 Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 900% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 40V
Turn On / Turn Off Time (Typ): 15µs, 50µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.95 EUR
10+4.68 EUR
100+3.5 EUR
500+3.05 EUR
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TK28V65W5,LQ TK28V65W5,LQ Toshiba Semiconductor and Storage TK28V65W5_datasheet_en_20160830.pdf?did=52955&prodName=TK28V65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
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2500+6.21 EUR
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TK28V65W5,LQ TK28V65W5,LQ Toshiba Semiconductor and Storage TK28V65W5_datasheet_en_20160830.pdf?did=52955&prodName=TK28V65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.41 EUR
10+9.76 EUR
100+7.13 EUR
500+6.21 EUR
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TK28V65W,LQ TK28V65W,LQ Toshiba Semiconductor and Storage TK28V65W_datasheet_en_20151225.pdf?did=30291&prodName=TK28V65W Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+4.51 EUR
Mindestbestellmenge: 2500 Stücke
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TK28V65W,LQ TK28V65W,LQ Toshiba Semiconductor and Storage TK28V65W_datasheet_en_20151225.pdf?did=30291&prodName=TK28V65W Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 4966 Stücke:
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500+5.88 EUR
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TK31Z60X,S1F TK31Z60X,S1F Toshiba Semiconductor and Storage TK31Z60X_datasheet_en_20171206.pdf?did=30412&prodName=TK31Z60X Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
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TPH1R204PL1,LQ TPH1R204PL1,LQ Toshiba Semiconductor and Storage TPH1R204PL1_datasheet_en_20200626.pdf?did=69120&prodName=TPH1R204PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Produkt ist nicht verfügbar
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TPH1R204PL1,LQ TPH1R204PL1,LQ Toshiba Semiconductor and Storage TPH1R204PL1_datasheet_en_20200626.pdf?did=69120&prodName=TPH1R204PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 3586 Stücke:
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7UL2G125FK,LF docget.jsp?did=69786&prodName=7UL2G125FK
7UL2G125FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V US8
Supplier Device Package: US8
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 2
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5959 Stücke:
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32+0.67 EUR
39+0.55 EUR
42+0.5 EUR
100+0.38 EUR
250+0.35 EUR
500+0.29 EUR
1000+0.21 EUR
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SSM6K516NU,LF
SSM6K516NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.29 EUR
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SSM6K516NU,LF
SSM6K516NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5845 Stücke:
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SSM6K518NU,LF
SSM6K518NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 6A 6UDFNB
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
auf Bestellung 6000 Stücke:
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3000+0.29 EUR
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SSM6K518NU,LF
SSM6K518NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 6148 Stücke:
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25+0.83 EUR
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SSM6K517NU,LF docget.jsp?did=69320&prodName=SSM6K517NU
SSM6K517NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
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SSM6K517NU,LF docget.jsp?did=69320&prodName=SSM6K517NU
SSM6K517NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
auf Bestellung 3456 Stücke:
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17+1.27 EUR
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TB67B008FTG,EL TB67B008FTG_FNG_en_20190318.pdf
TB67B008FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 20000 Stücke:
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5000+1.58 EUR
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TB67B008FTG,EL TB67B008FTG_FNG_en_20190318.pdf
TB67B008FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 23197 Stücke:
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7+3.47 EUR
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25+2.32 EUR
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1000+1.82 EUR
2500+1.76 EUR
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TB67B008FNG,EL TB67B008FTG_FNG_en_20190318.pdf
TB67B008FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
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TB67B008FNG,EL TB67B008FTG_FNG_en_20190318.pdf
TB67B008FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 1965 Stücke:
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6+3.69 EUR
10+2.71 EUR
25+2.48 EUR
100+2.21 EUR
250+2.08 EUR
500+2.01 EUR
1000+1.95 EUR
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TC7WPN3125FK,LF(CT
TC7WPN3125FK,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 3000 Stücke:
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3000+0.21 EUR
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TC7WPN3125FK,LF(CT
TC7WPN3125FK,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 5999 Stücke:
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22+0.99 EUR
29+0.74 EUR
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SSM6N7002KFU,LXH docget.jsp?did=30374&prodName=SSM6N7002KFU
SSM6N7002KFU,LXH
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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3000+0.15 EUR
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SSM6N7002KFU,LXH docget.jsp?did=30374&prodName=SSM6N7002KFU
SSM6N7002KFU,LXH
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
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30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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TK155U65Z,RQ
TK155U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=150W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Produkt ist nicht verfügbar
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TK155U65Z,RQ
TK155U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=150W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Produkt ist nicht verfügbar
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RN2112MFV,L3F RN2112MFV_datasheet_en_20190107.pdf?did=5886&prodName=RN2112MFV
RN2112MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
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RN2112MFV,L3F RN2112MFV_datasheet_en_20190107.pdf?did=5886&prodName=RN2112MFV
RN2112MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
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TOCP155K
Hersteller: Toshiba Semiconductor and Storage
Description: FIBER OPTIC TRANSMITTER
Produkt ist nicht verfügbar
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TOCP155K(SUMID)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TLP3547(TP1,F docget.jsp?did=36853&prodName=TLP3547
TLP3547(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 5 A
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+9.41 EUR
Mindestbestellmenge: 1500 Stücke
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TLP3547(TP1,F docget.jsp?did=36853&prodName=TLP3547
TLP3547(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 5 A
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 5236 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.61 EUR
10+12.11 EUR
25+11.57 EUR
50+11.17 EUR
100+10.79 EUR
250+10.31 EUR
500+9.95 EUR
Mindestbestellmenge: 2 Stücke
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TLP3556A(TP1,F datasheet_en_20230529.pdf?did=60315
TLP3556A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+4.61 EUR
3000+4.45 EUR
Mindestbestellmenge: 1500 Stücke
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TLP3556A(TP1,F datasheet_en_20230529.pdf?did=60315
TLP3556A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 3739 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.64 EUR
10+5.93 EUR
25+5.66 EUR
50+5.46 EUR
100+5.28 EUR
250+5.05 EUR
500+4.87 EUR
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TLP3556(TP1,F) TLP3556_datasheet_en_20200325.pdf?did=11952&prodName=TLP3556
TLP3556(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-100V
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
On-State Resistance (Max): 700 mOhms
Voltage - Load: 0 V ~ 100 V
Supplier Device Package: 4-SMD
Load Current: 1 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.33VDC
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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SSM3J15FS,LF docget.jsp?did=22746&prodName=SSM3J15FS
SSM3J15FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 16200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.087 EUR
6000+0.077 EUR
9000+0.073 EUR
15000+0.068 EUR
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SSM3J15FS,LF docget.jsp?did=22746&prodName=SSM3J15FS
SSM3J15FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 17595 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 50 Stücke
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TPH7R006PL,L1Q docget.jsp?did=55699&prodName=TPH7R006PL
TPH7R006PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.61 EUR
10000+0.57 EUR
15000+0.55 EUR
25000+0.52 EUR
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TPH7R006PL,L1Q docget.jsp?did=55699&prodName=TPH7R006PL
TPH7R006PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 29133 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.51 EUR
14+1.58 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.74 EUR
2000+0.68 EUR
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TB9057FG TB9057FG_datasheet_en_20210118.pdf?did=65112&prodName=TB9057FG
TB9057FG
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE MOTOR H-BRIDGE DRIVER
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Driver
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver
Voltage - Supply: 5V ~ 21V
Technology: Bi-CMOS
Supplier Device Package: 48-LQFP (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.73 EUR
10+18.72 EUR
25+17.85 EUR
80+15.51 EUR
250+14.8 EUR
500+13.49 EUR
1000+11.76 EUR
Mindestbestellmenge: 2 Stücke
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TK190U65Z,RQ docget.jsp?did=69977&prodName=TK190U65Z
TK190U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.71 EUR
10+5.06 EUR
100+3.55 EUR
500+2.96 EUR
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TPHR6503PL1,LQ TPHR6503PL1_datasheet_en_20200626.pdf?did=69019&prodName=TPHR6503PL1
TPHR6503PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.8 EUR
Mindestbestellmenge: 5000 Stücke
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TPHR6503PL1,LQ TPHR6503PL1_datasheet_en_20200626.pdf?did=69019&prodName=TPHR6503PL1
TPHR6503PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 8788 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.18 EUR
10+4.01 EUR
100+2.78 EUR
500+2.25 EUR
1000+2.19 EUR
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TK190A65Z,S4X docget.jsp?did=67746&prodName=TK190A65Z
TK190A65Z,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.54 EUR
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TK090A65Z,S4X TK090A65Z_datasheet_en_20181120.pdf?did=63648&prodName=TK090A65Z
TK090A65Z,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.65 EUR
Mindestbestellmenge: 3 Stücke
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TLP5231(D4-TP,E TLP5231_Prelim_DS.pdf
TLP5231(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 300ns, 300ns
Pulse Width Distortion (Max): 150ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 21V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+5.15 EUR
Mindestbestellmenge: 1500 Stücke
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TLP5231(D4-TP,E TLP5231_Prelim_DS.pdf
TLP5231(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 300ns, 300ns
Pulse Width Distortion (Max): 150ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 21V ~ 30V
auf Bestellung 2452 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.34 EUR
10+7.71 EUR
100+6.16 EUR
500+5.49 EUR
Mindestbestellmenge: 3 Stücke
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TLP523-2(YASK,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(SHRP-MA,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(ADCHI-PP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(TOJS,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP523(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP523(PP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-2(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-2(MBS,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-2(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN1303,LF docget.jsp?did=18776&prodName=RN1303
RN1303,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1303,LF docget.jsp?did=18776&prodName=RN1303
RN1303,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 2840 Stücke:
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TLX9000(TPL,F TLX9000_datasheet_en_20190628.pdf?did=53129&prodName=TLX9000
TLX9000(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 900% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 40V
Turn On / Turn Off Time (Typ): 15µs, 50µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLX9000(TPL,F TLX9000_datasheet_en_20190628.pdf?did=53129&prodName=TLX9000
TLX9000(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 900% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 40V
Turn On / Turn Off Time (Typ): 15µs, 50µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.95 EUR
10+4.68 EUR
100+3.5 EUR
500+3.05 EUR
Mindestbestellmenge: 4 Stücke
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TK28V65W5,LQ TK28V65W5_datasheet_en_20160830.pdf?did=52955&prodName=TK28V65W5
TK28V65W5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+6.21 EUR
Mindestbestellmenge: 2500 Stücke
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TK28V65W5,LQ TK28V65W5_datasheet_en_20160830.pdf?did=52955&prodName=TK28V65W5
TK28V65W5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.41 EUR
10+9.76 EUR
100+7.13 EUR
500+6.21 EUR
Mindestbestellmenge: 2 Stücke
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TK28V65W,LQ TK28V65W_datasheet_en_20151225.pdf?did=30291&prodName=TK28V65W
TK28V65W,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.51 EUR
Mindestbestellmenge: 2500 Stücke
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TK28V65W,LQ TK28V65W_datasheet_en_20151225.pdf?did=30291&prodName=TK28V65W
TK28V65W,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 4966 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.83 EUR
10+9.33 EUR
100+6.79 EUR
500+5.88 EUR
Mindestbestellmenge: 2 Stücke
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TK31Z60X,S1F TK31Z60X_datasheet_en_20171206.pdf?did=30412&prodName=TK31Z60X
TK31Z60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 11 Stücke:
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AnzahlPrivatkunde
1+26.04 EUR
10+23.5 EUR
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TPH1R204PL1,LQ TPH1R204PL1_datasheet_en_20200626.pdf?did=69120&prodName=TPH1R204PL1
TPH1R204PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Produkt ist nicht verfügbar
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TPH1R204PL1,LQ TPH1R204PL1_datasheet_en_20200626.pdf?did=69120&prodName=TPH1R204PL1
TPH1R204PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 3586 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.63 EUR
10+2.98 EUR
100+2.02 EUR
500+1.62 EUR
1000+1.49 EUR
2000+1.48 EUR
Mindestbestellmenge: 5 Stücke
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