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TJ80S04M3L,LXHQ TJ80S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11287&prodName=TJ80S04M3L Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ40S04M3L,LXHQ TJ40S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11299&prodName=TJ40S04M3L Description: MOSFET P-CH 40V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.74 EUR
4000+0.69 EUR
Mindestbestellmenge: 2000
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TJ40S04M3L,LXHQ TJ40S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11299&prodName=TJ40S04M3L Description: MOSFET P-CH 40V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5818 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
12+1.56 EUR
100+1.11 EUR
500+0.88 EUR
1000+0.80 EUR
Mindestbestellmenge: 8
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TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Toshiba Semiconductor and Storage TJ200F04M3L_datasheet_en_20200624.pdf?did=29739&prodName=TJ200F04M3L Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Toshiba Semiconductor and Storage TJ200F04M3L_datasheet_en_20200624.pdf?did=29739&prodName=TJ200F04M3L Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.76 EUR
10+4.45 EUR
100+3.13 EUR
500+2.57 EUR
Mindestbestellmenge: 3
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SSM3J64CTC,L3F SSM3J64CTC,L3F Toshiba Semiconductor and Storage SSM3J64CTC_datasheet_en_20210311.pdf?did=59149&prodName=SSM3J64CTC Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.12 EUR
Mindestbestellmenge: 10000
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SSM3J64CTC,L3F SSM3J64CTC,L3F Toshiba Semiconductor and Storage SSM3J64CTC_datasheet_en_20210311.pdf?did=59149&prodName=SSM3J64CTC Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 39773 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
42+0.43 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
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SSM3J65CTC,L3F SSM3J65CTC,L3F Toshiba Semiconductor and Storage SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.12 EUR
Mindestbestellmenge: 10000
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SSM3J65CTC,L3F SSM3J65CTC,L3F Toshiba Semiconductor and Storage SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
auf Bestellung 26774 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 29
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2SD1223,L1XGQ(O Toshiba Semiconductor and Storage docget.jsp?did=20861&prodName=2SD1223 Description: TRANSISTOR NPN DARL PWMOLD
Produkt ist nicht verfügbar
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TCR3UG285A,LF TCR3UG285A,LF Toshiba Semiconductor and Storage docget.jsp?did=59176&prodName=TCR3UG285A Description: IC REG LINEAR 2.85V 300MA 4WCSPF
auf Bestellung 5000 Stücke:
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TCR3UG285A,LF TCR3UG285A,LF Toshiba Semiconductor and Storage docget.jsp?did=59176&prodName=TCR3UG285A Description: IC REG LINEAR 2.85V 300MA 4WCSPF
auf Bestellung 9785 Stücke:
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TCR3UG28A,LF TCR3UG28A,LF Toshiba Semiconductor and Storage TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Produkt ist nicht verfügbar
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TCR3UG28A,LF TCR3UG28A,LF Toshiba Semiconductor and Storage TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 4898 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
29+0.61 EUR
32+0.56 EUR
100+0.41 EUR
250+0.38 EUR
500+0.31 EUR
1000+0.23 EUR
2500+0.21 EUR
Mindestbestellmenge: 24
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TLP185(V4GBTL,SE TLP185(V4GBTL,SE Toshiba Semiconductor and Storage docget.jsp?did=14111&prodName=TLP185(SE Description: OPTOISO 3.75KV TRANS W/BASE 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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CUHS15S30,H3F CUHS15S30,H3F Toshiba Semiconductor and Storage CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30 Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
30000+0.13 EUR
Mindestbestellmenge: 3000
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CUHS15S30,H3F CUHS15S30,H3F Toshiba Semiconductor and Storage CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30 Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 41492 Stücke:
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31+0.58 EUR
40+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 31
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TLP161G(T7TL,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T7TR,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T5TL,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(TPL,U,C,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT7,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT5,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP628-2(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TK190U65Z,RQ TK190U65Z,RQ Toshiba Semiconductor and Storage docget.jsp?did=69977&prodName=TK190U65Z Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Produkt ist nicht verfügbar
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TC7QPB9307FK(EL) TC7QPB9307FK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57137&prodName=TC7QPB9307FK Description: IC BUS SWITCH 4 X 1:1 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
Produkt ist nicht verfügbar
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TC7QPB9307FK(EL) TC7QPB9307FK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57137&prodName=TC7QPB9307FK Description: IC BUS SWITCH 4 X 1:1 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
auf Bestellung 2447 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.46 EUR
14+1.28 EUR
25+1.20 EUR
100+0.98 EUR
250+0.91 EUR
500+0.78 EUR
1000+0.62 EUR
Mindestbestellmenge: 13
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SSM3J377R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59203&prodName=SSM3J377R Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
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SSM3J377R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59203&prodName=SSM3J377R Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9795 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
47+0.38 EUR
100+0.25 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 32
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TCKE805NA,RF TCKE805NA,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Produkt ist nicht verfügbar
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TCKE805NA,RF TCKE805NA,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 4069 Stücke:
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10+2.52 EUR
25+2.12 EUR
100+1.68 EUR
250+1.46 EUR
500+1.33 EUR
1000+1.22 EUR
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SSM3K44MFV,L3F SSM3K44MFV,L3F Toshiba Semiconductor and Storage SSM3K44MFV_datasheet_en_20180517.pdf?did=363&prodName=SSM3K44MFV Description: MOSFET N-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
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SSM3K44MFV,L3F SSM3K44MFV,L3F Toshiba Semiconductor and Storage SSM3K44MFV_datasheet_en_20180517.pdf?did=363&prodName=SSM3K44MFV Description: MOSFET N-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
auf Bestellung 16796 Stücke:
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53+0.33 EUR
87+0.20 EUR
140+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.07 EUR
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TLX9376(TPL,F TLX9376(TPL,F Toshiba Semiconductor and Storage docget.jsp?did=53145&prodName=TLX9376 Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Supply: 4.5V ~ 5.5V
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Current - Output / Channel: 10 mA
Grade: Automotive
Qualification: AEC-Q101
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TLX9376(TPL,F TLX9376(TPL,F Toshiba Semiconductor and Storage docget.jsp?did=53145&prodName=TLX9376 Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Supply: 4.5V ~ 5.5V
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Current - Output / Channel: 10 mA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5910 Stücke:
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3+6.74 EUR
10+4.77 EUR
100+3.91 EUR
500+3.29 EUR
1000+3.02 EUR
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TCK22946G,LF TCK22946G,LF Toshiba Semiconductor and Storage TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
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TCK22946G,LF TCK22946G,LF Toshiba Semiconductor and Storage TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Part Status: Active
auf Bestellung 1660 Stücke:
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24+0.76 EUR
27+0.65 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
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RN1107,LF(CT RN1107,LF(CT Toshiba Semiconductor and Storage RN1107,8,9.pdf Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
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RN1107,LF(CT RN1107,LF(CT Toshiba Semiconductor and Storage RN1107,8,9.pdf Description: TRANS PREBIAS NPN 50V 0.1A SSM
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TLP512(HITACHI,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN2117(TE85L,F) RN2117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18859&prodName=RN2117 Description: TRANS PREBIAS PNP 50V 0.1A SSM
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RN2117(TE85L,F) RN2117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18859&prodName=RN2117 Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 2950 Stücke:
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26+0.69 EUR
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100+0.30 EUR
500+0.20 EUR
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74VHCV541FT 74VHCV541FT Toshiba Semiconductor and Storage docget.jsp?did=15531&prodName=74VHCV541FT Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOPB
Part Status: Active
auf Bestellung 2500 Stücke:
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2500+0.29 EUR
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74VHCV541FT 74VHCV541FT Toshiba Semiconductor and Storage docget.jsp?did=15531&prodName=74VHCV541FT Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOPB
Part Status: Active
auf Bestellung 5928 Stücke:
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14+1.32 EUR
23+0.79 EUR
27+0.65 EUR
100+0.50 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
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TCK401G,LF TCK401G,LF Toshiba Semiconductor and Storage docget.jsp?did=59174&prodName=TCK401G Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
auf Bestellung 50000 Stücke:
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5000+0.32 EUR
Mindestbestellmenge: 5000
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TCK401G,LF TCK401G,LF Toshiba Semiconductor and Storage docget.jsp?did=59174&prodName=TCK401G Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
auf Bestellung 57889 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
30+0.60 EUR
34+0.53 EUR
100+0.46 EUR
250+0.43 EUR
500+0.41 EUR
1000+0.39 EUR
2500+0.38 EUR
Mindestbestellmenge: 21
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TCK402G,LF TCK402G,LF Toshiba Semiconductor and Storage TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TCK402G,LF TCK402G,LF Toshiba Semiconductor and Storage TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TK750A60F,S4X TK750A60F,S4X Toshiba Semiconductor and Storage TK750A60F_datasheet_en_20180925.pdf?did=59772&prodName=TK750A60F Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
auf Bestellung 693 Stücke:
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5+3.80 EUR
50+1.86 EUR
100+1.45 EUR
500+1.28 EUR
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CVJ10F30,LF CVJ10F30,LF Toshiba Semiconductor and Storage docget.jsp?did=13914&prodName=CVJ10F30 Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
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CVJ10F30,LF CVJ10F30,LF Toshiba Semiconductor and Storage docget.jsp?did=13914&prodName=CVJ10F30 Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
auf Bestellung 386 Stücke:
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27+0.67 EUR
36+0.50 EUR
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TLP2955(F) TLP2955(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER DIP8 THROUGH-HOLE
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TK160F10N1L,LXGQ TK160F10N1L,LXGQ Toshiba Semiconductor and Storage TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.70 EUR
Mindestbestellmenge: 1000
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TK160F10N1L,LXGQ TK160F10N1L,LXGQ Toshiba Semiconductor and Storage TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5179 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.07 EUR
10+4.36 EUR
100+3.21 EUR
500+2.84 EUR
Mindestbestellmenge: 3
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2SC5354,TOJSQ(O Toshiba Semiconductor and Storage 2SC5354_datasheet_en_20131101.pdf?did=20689&prodName=2SC5354 Description: TRANSISTOR NPN TO-3PN
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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2SC5354,XGQ(O Toshiba Semiconductor and Storage 2SC5354_datasheet_en_20131101.pdf?did=20689&prodName=2SC5354 Description: TRANSISTOR NPN TO-3PN
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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RN1905FE,LF(CT RN1905FE,LF(CT Toshiba Semiconductor and Storage RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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RN1905FE,LF(CT RN1905FE,LF(CT Toshiba Semiconductor and Storage RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
81+0.22 EUR
131+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 50
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TCR3UG08A,LF TCR3UG08A,LF Toshiba Semiconductor and Storage TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A Description: IC REG LINEAR 0.8V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Produkt ist nicht verfügbar
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TCR3UG08A,LF TCR3UG08A,LF Toshiba Semiconductor and Storage TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A Description: IC REG LINEAR 0.8V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 4480 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
29+0.61 EUR
32+0.56 EUR
100+0.41 EUR
250+0.38 EUR
500+0.31 EUR
1000+0.23 EUR
2500+0.21 EUR
Mindestbestellmenge: 24
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TJ80S04M3L,LXHQ docget.jsp?did=11287&prodName=TJ80S04M3L
TJ80S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ40S04M3L,LXHQ docget.jsp?did=11299&prodName=TJ40S04M3L
TJ40S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.74 EUR
4000+0.69 EUR
Mindestbestellmenge: 2000
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TJ40S04M3L,LXHQ docget.jsp?did=11299&prodName=TJ40S04M3L
TJ40S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
12+1.56 EUR
100+1.11 EUR
500+0.88 EUR
1000+0.80 EUR
Mindestbestellmenge: 8
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TJ200F04M3L,LXHQ TJ200F04M3L_datasheet_en_20200624.pdf?did=29739&prodName=TJ200F04M3L
TJ200F04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TJ200F04M3L,LXHQ TJ200F04M3L_datasheet_en_20200624.pdf?did=29739&prodName=TJ200F04M3L
TJ200F04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.76 EUR
10+4.45 EUR
100+3.13 EUR
500+2.57 EUR
Mindestbestellmenge: 3
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SSM3J64CTC,L3F SSM3J64CTC_datasheet_en_20210311.pdf?did=59149&prodName=SSM3J64CTC
SSM3J64CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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SSM3J64CTC,L3F SSM3J64CTC_datasheet_en_20210311.pdf?did=59149&prodName=SSM3J64CTC
SSM3J64CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 39773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
42+0.43 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 29
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SSM3J65CTC,L3F SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC
SSM3J65CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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SSM3J65CTC,L3F SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC
SSM3J65CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
auf Bestellung 26774 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 29
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2SD1223,L1XGQ(O docget.jsp?did=20861&prodName=2SD1223
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN DARL PWMOLD
Produkt ist nicht verfügbar
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TCR3UG285A,LF docget.jsp?did=59176&prodName=TCR3UG285A
TCR3UG285A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA 4WCSPF
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR3UG285A,LF docget.jsp?did=59176&prodName=TCR3UG285A
TCR3UG285A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA 4WCSPF
auf Bestellung 9785 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR3UG28A,LF TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A
TCR3UG28A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Produkt ist nicht verfügbar
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TCR3UG28A,LF TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A
TCR3UG28A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 4898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
29+0.61 EUR
32+0.56 EUR
100+0.41 EUR
250+0.38 EUR
500+0.31 EUR
1000+0.23 EUR
2500+0.21 EUR
Mindestbestellmenge: 24
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TLP185(V4GBTL,SE docget.jsp?did=14111&prodName=TLP185(SE
TLP185(V4GBTL,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS W/BASE 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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CUHS15S30,H3F CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30
CUHS15S30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
30000+0.13 EUR
Mindestbestellmenge: 3000
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CUHS15S30,H3F CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30
CUHS15S30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 41492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
40+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 31
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TLP161G(T7TL,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T7TR,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T5TL,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(TPL,U,C,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT7,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT5,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP628-2(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TK190U65Z,RQ docget.jsp?did=69977&prodName=TK190U65Z
TK190U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Produkt ist nicht verfügbar
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TC7QPB9307FK(EL) docget.jsp?did=57137&prodName=TC7QPB9307FK
TC7QPB9307FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
Produkt ist nicht verfügbar
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TC7QPB9307FK(EL) docget.jsp?did=57137&prodName=TC7QPB9307FK
TC7QPB9307FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
auf Bestellung 2447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
14+1.28 EUR
25+1.20 EUR
100+0.98 EUR
250+0.91 EUR
500+0.78 EUR
1000+0.62 EUR
Mindestbestellmenge: 13
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SSM3J377R,LXHF docget.jsp?did=59203&prodName=SSM3J377R
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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SSM3J377R,LXHF docget.jsp?did=59203&prodName=SSM3J377R
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.25 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 32
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TCKE805NA,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE805NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Produkt ist nicht verfügbar
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TCKE805NA,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE805NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 4069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+2.52 EUR
25+2.12 EUR
100+1.68 EUR
250+1.46 EUR
500+1.33 EUR
1000+1.22 EUR
Mindestbestellmenge: 5
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SSM3K44MFV,L3F SSM3K44MFV_datasheet_en_20180517.pdf?did=363&prodName=SSM3K44MFV
SSM3K44MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.06 EUR
Mindestbestellmenge: 8000
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SSM3K44MFV,L3F SSM3K44MFV_datasheet_en_20180517.pdf?did=363&prodName=SSM3K44MFV
SSM3K44MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
auf Bestellung 16796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
87+0.20 EUR
140+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 53
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TLX9376(TPL,F docget.jsp?did=53145&prodName=TLX9376
TLX9376(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Supply: 4.5V ~ 5.5V
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Current - Output / Channel: 10 mA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.90 EUR
Mindestbestellmenge: 3000
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TLX9376(TPL,F docget.jsp?did=53145&prodName=TLX9376
TLX9376(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Supply: 4.5V ~ 5.5V
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Current - Output / Channel: 10 mA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.74 EUR
10+4.77 EUR
100+3.91 EUR
500+3.29 EUR
1000+3.02 EUR
Mindestbestellmenge: 3
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TCK22946G,LF TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G
TCK22946G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
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TCK22946G,LF TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G
TCK22946G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Part Status: Active
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
27+0.65 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 24
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RN1107,LF(CT RN1107,8,9.pdf
RN1107,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1107,LF(CT RN1107,8,9.pdf
RN1107,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3806 Stücke:
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TLP512(HITACHI,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN2117(TE85L,F) docget.jsp?did=18859&prodName=RN2117
RN2117(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN2117(TE85L,F) docget.jsp?did=18859&prodName=RN2117
RN2117(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
32+0.56 EUR
100+0.30 EUR
500+0.20 EUR
1000+0.13 EUR
Mindestbestellmenge: 26
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74VHCV541FT docget.jsp?did=15531&prodName=74VHCV541FT
74VHCV541FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOPB
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.29 EUR
Mindestbestellmenge: 2500
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74VHCV541FT docget.jsp?did=15531&prodName=74VHCV541FT
74VHCV541FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOPB
Part Status: Active
auf Bestellung 5928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
23+0.79 EUR
27+0.65 EUR
100+0.50 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 14
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TCK401G,LF docget.jsp?did=59174&prodName=TCK401G
TCK401G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.32 EUR
Mindestbestellmenge: 5000
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TCK401G,LF docget.jsp?did=59174&prodName=TCK401G
TCK401G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
auf Bestellung 57889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
30+0.60 EUR
34+0.53 EUR
100+0.46 EUR
250+0.43 EUR
500+0.41 EUR
1000+0.39 EUR
2500+0.38 EUR
Mindestbestellmenge: 21
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TCK402G,LF TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G
TCK402G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TCK402G,LF TCK401G_datasheet_en_20191213.pdf?did=59174&prodName=TCK401G
TCK402G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TK750A60F,S4X TK750A60F_datasheet_en_20180925.pdf?did=59772&prodName=TK750A60F
TK750A60F,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
auf Bestellung 693 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.80 EUR
50+1.86 EUR
100+1.45 EUR
500+1.28 EUR
Mindestbestellmenge: 5
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CVJ10F30,LF docget.jsp?did=13914&prodName=CVJ10F30
CVJ10F30,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
Produkt ist nicht verfügbar
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CVJ10F30,LF docget.jsp?did=13914&prodName=CVJ10F30
CVJ10F30,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
36+0.50 EUR
100+0.31 EUR
Mindestbestellmenge: 27
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TLP2955(F)
TLP2955(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER DIP8 THROUGH-HOLE
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TK160F10N1L,LXGQ TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L
TK160F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.70 EUR
Mindestbestellmenge: 1000
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TK160F10N1L,LXGQ TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L
TK160F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.07 EUR
10+4.36 EUR
100+3.21 EUR
500+2.84 EUR
Mindestbestellmenge: 3
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2SC5354,TOJSQ(O 2SC5354_datasheet_en_20131101.pdf?did=20689&prodName=2SC5354
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN TO-3PN
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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2SC5354,XGQ(O 2SC5354_datasheet_en_20131101.pdf?did=20689&prodName=2SC5354
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN TO-3PN
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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RN1905FE,LF(CT RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE
RN1905FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1905FE,LF(CT RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE
RN1905FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
81+0.22 EUR
131+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
TCR3UG08A,LF TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A
TCR3UG08A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.8V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR3UG08A,LF TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A
TCR3UG08A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.8V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 4480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
29+0.61 EUR
32+0.56 EUR
100+0.41 EUR
250+0.38 EUR
500+0.31 EUR
1000+0.23 EUR
2500+0.21 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
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