Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13445) > Seite 158 nach 225
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TPCP8701(TE85L,F,M | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 1.77W Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V Supplier Device Package: PS-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TC4538BP(N,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: Monostable Operating Temperature: -40°C ~ 85°C Propagation Delay: 100 ns Independent Circuits: 2 Current - Output High, Low: 9mA, 15mA Schmitt Trigger Input: No Supplier Device Package: 16-DIP Voltage - Supply: 3 V ~ 18 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP3480(TP,E | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.083", 2.10mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 4.5 A Supplier Device Package: P-SON4 Part Status: Active Voltage - Load: 0 V ~ 30 V On-State Resistance (Max): 50 mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP3480(TP,E | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD (0.083", 2.10mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 4.5 A Supplier Device Package: P-SON4 Part Status: Active Voltage - Load: 0 V ~ 30 V On-State Resistance (Max): 50 mOhms |
auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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DF5A3.3JE,LM | Toshiba Semiconductor and Storage |
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auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DF5A3.3JE,LM | Toshiba Semiconductor and Storage |
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auf Bestellung 7879 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MUZ6V8,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 88pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 6.8V Supplier Device Package: USM Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13V (Typ) Power - Peak Pulse: 180W Power Line Protection: No Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUZ6V8,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 88pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 6.8V Supplier Device Package: USM Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13V (Typ) Power - Peak Pulse: 180W Power Line Protection: No Part Status: Active |
auf Bestellung 5738 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7PZ14FU,LJ(CT | Toshiba Semiconductor and Storage |
![]() Features: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: US6 Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 10 µA |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7PZ14FU,LJ(CT | Toshiba Semiconductor and Storage |
![]() Features: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: US6 Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 10 µA |
auf Bestellung 47448 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1405,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1405,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1405,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1405,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 7534 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1407,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN1407,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 563 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1407,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1407,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 5654 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1403,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1403,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 |
auf Bestellung 5980 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1409,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1409,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1404,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1404,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 29980 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1406,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1406,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1401,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1401,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1408,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1408,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1402,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN1402,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 2671 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1408,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN1408,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 2240 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4903FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4903FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 7998 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3RM09A,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 0.9V PSRR: 100dB (1kHz) Voltage Dropout (Max): 0.13V @ 300mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TCR3RM09A,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 0.9V PSRR: 100dB (1kHz) Voltage Dropout (Max): 0.13V @ 300mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SA1832-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 120 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1832-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 120 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3681 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1832-GR,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 120 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1832-GR,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 120 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP137(BV,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP Packaging: Bulk Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 6-MFSOP, 5 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TLP137(BV-TPL,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 6-MFSOP, 5 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TLP137(BV-TPR,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 6-MFSOP, 5 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TLP137(TPL,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 6-MFSOP, 5 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TLP137(TPR,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 6-MFSOP, 5 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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RN2402,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2402,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2302,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN2302,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP240D(F | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 250 mA Approval Agency: CQC, cUL, UL, VDE Supplier Device Package: 4-DIP Part Status: Active Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
auf Bestellung 141 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP240D(LF1,F | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 250 mA Approval Agency: CQC, cUL, UL, VDE Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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TC74VCX245FK(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-VFSOP (0.118", 3.00mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-VSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC74VCX245FK(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 20-VFSOP (0.118", 3.00mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-VSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SA1586-GR,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1586-GR,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 7655 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1586-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SA1586-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 3476 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1588-O,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 100 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPCP8701(TE85L,F,M |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 80V 3A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.77W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PS-8
Description: TRANS 2NPN 80V 3A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.77W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PS-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC4538BP(N,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIVIBRATOR 100NS 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 100 ns
Independent Circuits: 2
Current - Output High, Low: 9mA, 15mA
Schmitt Trigger Input: No
Supplier Device Package: 16-DIP
Voltage - Supply: 3 V ~ 18 V
Description: IC MULTIVIBRATOR 100NS 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 100 ns
Independent Circuits: 2
Current - Output High, Low: 9mA, 15mA
Schmitt Trigger Input: No
Supplier Device Package: 16-DIP
Voltage - Supply: 3 V ~ 18 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP3480(TP,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP3480(TP,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.43 EUR |
10+ | 5.85 EUR |
100+ | 4.52 EUR |
DF5A3.3JE,LM |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Description: TVS DIODE ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
DF5A3.3JE,LM |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Description: TVS DIODE ESV
auf Bestellung 7879 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
MUZ6V8,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.8VWM 13VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6.8VWM 13VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
MUZ6V8,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.8VWM 13VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6.8VWM 13VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
auf Bestellung 5738 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 0.62 EUR |
35+ | 0.51 EUR |
100+ | 0.27 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
TC7PZ14FU,LJ(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 2CH 2-INP US6
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
Description: IC INVERT SCHMITT 2CH 2-INP US6
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.1 EUR |
6000+ | 0.091 EUR |
9000+ | 0.085 EUR |
15000+ | 0.079 EUR |
21000+ | 0.075 EUR |
30000+ | 0.072 EUR |
TC7PZ14FU,LJ(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 2CH 2-INP US6
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
Description: IC INVERT SCHMITT 2CH 2-INP US6
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
auf Bestellung 47448 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 0.55 EUR |
56+ | 0.32 EUR |
69+ | 0.26 EUR |
100+ | 0.19 EUR |
250+ | 0.16 EUR |
500+ | 0.14 EUR |
1000+ | 0.12 EUR |
RN1405,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.095 EUR |
RN1405,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
RN1405,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.063 EUR |
RN1405,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 7534 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 0.32 EUR |
92+ | 0.19 EUR |
149+ | 0.12 EUR |
500+ | 0.086 EUR |
1000+ | 0.076 EUR |
RN1407,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN1407,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 563 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 0.26 EUR |
107+ | 0.17 EUR |
173+ | 0.1 EUR |
500+ | 0.074 EUR |
RN1407,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
RN1407,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5654 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
56+ | 0.32 EUR |
100+ | 0.2 EUR |
500+ | 0.15 EUR |
1000+ | 0.13 EUR |
RN1403,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
RN1403,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 0.51 EUR |
58+ | 0.31 EUR |
100+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.13 EUR |
RN1409,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.095 EUR |
RN1409,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
RN1404,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.094 EUR |
6000+ | 0.085 EUR |
9000+ | 0.08 EUR |
15000+ | 0.075 EUR |
21000+ | 0.071 EUR |
RN1404,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 29980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 0.46 EUR |
62+ | 0.29 EUR |
100+ | 0.18 EUR |
500+ | 0.13 EUR |
1000+ | 0.12 EUR |
RN1406,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.095 EUR |
RN1406,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
RN1401,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
RN1401,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
RN1408,LXHF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.095 EUR |
RN1408,LXHF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
RN1402,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN1402,LXHF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2671 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 0.51 EUR |
57+ | 0.31 EUR |
100+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.13 EUR |
RN1408,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN1408,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 0.26 EUR |
107+ | 0.17 EUR |
173+ | 0.1 EUR |
500+ | 0.074 EUR |
1000+ | 0.065 EUR |
RN4903FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.14 EUR |
RN4903FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 0.67 EUR |
43+ | 0.42 EUR |
100+ | 0.26 EUR |
500+ | 0.19 EUR |
1000+ | 0.17 EUR |
2000+ | 0.15 EUR |
TCR3RM09A,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TCR3RM09A,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1832-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
2SA1832-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3681 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
55+ | 0.33 EUR |
100+ | 0.2 EUR |
500+ | 0.15 EUR |
1000+ | 0.13 EUR |
2SA1832-GR,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.1 EUR |
9000+ | 0.095 EUR |
2SA1832-GR,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
55+ | 0.33 EUR |
100+ | 0.2 EUR |
500+ | 0.15 EUR |
1000+ | 0.13 EUR |
TLP137(BV,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP137(BV-TPL,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP137(BV-TPR,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP137(TPL,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP137(TPR,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN2402,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.095 EUR |
RN2402,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 0.51 EUR |
57+ | 0.31 EUR |
100+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.13 EUR |
RN2302,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN2302,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP240D(F |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.12 EUR |
10+ | 2 EUR |
100+ | 1.43 EUR |
TLP240D(LF1,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.12 EUR |
10+ | 2 EUR |
100+ | 1.43 EUR |
TC74VCX245FK(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC74VCX245FK(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1586-GR,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.092 EUR |
6000+ | 0.083 EUR |
2SA1586-GR,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 7655 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 0.46 EUR |
64+ | 0.28 EUR |
102+ | 0.17 EUR |
500+ | 0.13 EUR |
1000+ | 0.11 EUR |
2SA1586-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1586-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3476 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 0.44 EUR |
66+ | 0.27 EUR |
105+ | 0.17 EUR |
500+ | 0.12 EUR |
1000+ | 0.11 EUR |
2SA1588-O,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.067 EUR |