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TK33S10N1L,LXHQ TK33S10N1L,LXHQ Toshiba Semiconductor and Storage TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 3849 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
11+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
TLP3052A(F Toshiba Semiconductor and Storage TLP3052AF_datasheet_en_20201022.pdf?did=30349&prodName=TLP3052AF Description: MOSFET N-CH
Packaging: Box
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TPHR9003NL1,LQ TPHR9003NL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69022&prodName=TPHR9003NL1 Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Produkt ist nicht verfügbar
TPHR9003NL1,LQ TPHR9003NL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69022&prodName=TPHR9003NL1 Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 2195 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
10+ 2.03 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.16 EUR
2000+ 1.1 EUR
Mindestbestellmenge: 8
TPHR9203PL1,LQ TPHR9203PL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69038&prodName=TPHR9203PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.02 EUR
Mindestbestellmenge: 5000
TPHR9203PL1,LQ TPHR9203PL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69038&prodName=TPHR9203PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
auf Bestellung 16767 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
12+ 1.56 EUR
100+ 1.22 EUR
500+ 1.03 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 10
RN4985FE,LF(CT RN4985FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19050&prodName=RN4985FE Description: NPN + PNP BRT Q1BSR2.2KOHM Q1BER
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.076 EUR
Mindestbestellmenge: 4000
RN4985FE,LF(CT RN4985FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19050&prodName=RN4985FE Description: NPN + PNP BRT Q1BSR2.2KOHM Q1BER
auf Bestellung 6141 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
53+ 0.33 EUR
100+ 0.18 EUR
500+ 0.12 EUR
1000+ 0.079 EUR
2000+ 0.071 EUR
Mindestbestellmenge: 42
TPW1R005PL,L1Q TPW1R005PL,L1Q Toshiba Semiconductor and Storage TPW1R005PL_datasheet_en_20191030.pdf?did=56279&prodName=TPW1R005PL Description: MOSFET N-CH 45V 300A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+2.17 EUR
Mindestbestellmenge: 5000
TPW1R005PL,L1Q TPW1R005PL,L1Q Toshiba Semiconductor and Storage TPW1R005PL_datasheet_en_20191030.pdf?did=56279&prodName=TPW1R005PL Description: MOSFET N-CH 45V 300A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
auf Bestellung 12903 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.65 EUR
10+ 3.9 EUR
100+ 3.15 EUR
500+ 2.8 EUR
1000+ 2.4 EUR
2000+ 2.26 EUR
Mindestbestellmenge: 4
TLP759(TP1,J,F) TLP759(TP1,J,F) Toshiba Semiconductor and Storage docget.jsp?did=16868&prodName=TLP759 Description: PHOTOCOUPLER LOGIC 8DIP GW
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP759(D4-TP1,J,F) TLP759(D4-TP1,J,F) Toshiba Semiconductor and Storage docget.jsp?did=16868&prodName=TLP759 Description: PHOTOCOUPLER LOGIC 8DIP GW
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP759(J,F) TLP759(J,F) Toshiba Semiconductor and Storage docget.jsp?did=16868&prodName=TLP759 Description: PHOTOCOUPLER LOGIC 8DIP T/H
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP759(LF1,J,F) TLP759(LF1,J,F) Toshiba Semiconductor and Storage docget.jsp?did=16868&prodName=TLP759 Description: PHOTOCOUPLER LOGIC 8DIP GW
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP759(D4,J,F) TLP759(D4,J,F) Toshiba Semiconductor and Storage docget.jsp?did=16868&prodName=TLP759 Description: PHOTOCOUPLER LOGIC 8DIP T/H
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP759(D4-LF1,J,F) TLP759(D4-LF1,J,F) Toshiba Semiconductor and Storage docget.jsp?did=16868&prodName=TLP759 Description: PHOTOCOUPLER LOGIC 8DIP GW
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TCR3UM18A,LF TCR3UM18A,LF Toshiba Semiconductor and Storage docget.jsp?did=63293&prodName=TCR3UM085A Description: IC REG LINEAR 1.8V 300MA 4DFN
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR3UM18A,LF TCR3UM18A,LF Toshiba Semiconductor and Storage docget.jsp?did=63293&prodName=TCR3UM085A Description: IC REG LINEAR 1.8V 300MA 4DFN
auf Bestellung 59582 Stücke:
Lieferzeit 10-14 Tag (e)
TB67H400ANG TB67H400ANG Toshiba Semiconductor and Storage docget.jsp?did=56940&prodName=TB67H400ANG Description: IC MOTOR DRIVER 24SDIP
Packaging: Tray
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.28 EUR
10+ 9.23 EUR
25+ 8.73 EUR
80+ 7.56 EUR
230+ 7.17 EUR
440+ 6.44 EUR
Mindestbestellmenge: 2
TCR3UF18A,LM(CT TCR3UF18A,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.8V 300MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR3UF18A,LM(CT TCR3UF18A,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.8V 300MA SMV
auf Bestellung 5830 Stücke:
Lieferzeit 10-14 Tag (e)
TLX9291A(GBTPL,F TLX9291A(GBTPL,F Toshiba Semiconductor and Storage TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TLX9291A(GBTPL,F TLX9291A(GBTPL,F Toshiba Semiconductor and Storage TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.19 EUR
10+ 3.67 EUR
100+ 3.01 EUR
Mindestbestellmenge: 4
SSM3J353F,LF SSM3J353F,LF Toshiba Semiconductor and Storage SSM3J353F_datasheet_en_20161219.pdf?did=35740&prodName=SSM3J353F Description: MOSFET P-CH 30V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.11 EUR
Mindestbestellmenge: 3000
SSM3J372R,LXHF Toshiba Semiconductor and Storage SSM3J372R_datasheet_en_20220629.pdf?did=59199&prodName=SSM3J372R Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
6000+ 0.18 EUR
Mindestbestellmenge: 3000
SSM3J372R,LXHF Toshiba Semiconductor and Storage SSM3J372R_datasheet_en_20220629.pdf?did=59199&prodName=SSM3J372R Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7242 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
32+ 0.55 EUR
100+ 0.33 EUR
500+ 0.31 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 25
SSM3J375F,LXHF SSM3J375F,LXHF Toshiba Semiconductor and Storage SSM3J375F_datasheet_en_20220629.pdf?did=59201&prodName=SSM3J375F Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+ 0.16 EUR
Mindestbestellmenge: 3000
SSM3J375F,LXHF SSM3J375F,LXHF Toshiba Semiconductor and Storage SSM3J375F_datasheet_en_20220629.pdf?did=59201&prodName=SSM3J375F Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 12573 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 24
TK40S06N1L,LQ TK40S06N1L,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Produkt ist nicht verfügbar
2SA1721OTE85LF 2SA1721OTE85LF Toshiba Semiconductor and Storage 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SA1721RTE85LF 2SA1721RTE85LF Toshiba Semiconductor and Storage docget.jsp?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
2SA1721RTE85LF 2SA1721RTE85LF Toshiba Semiconductor and Storage docget.jsp?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
2SB1457(T6CANO,F,M 2SB1457(T6CANO,F,M Toshiba Semiconductor and Storage 2SB1457_2009-12-21.pdf Description: TRANS PNP 2A 100V TO226-3
Produkt ist nicht verfügbar
2SD2695(T6CANO,A,F 2SD2695(T6CANO,A,F Toshiba Semiconductor and Storage 2SD2695_2009-12-21.pdf Description: TRANS NPN 2A 60V TO226-3
Produkt ist nicht verfügbar
2SD2695(T6CANO,F,M 2SD2695(T6CANO,F,M Toshiba Semiconductor and Storage 2SD2695_2009-12-21.pdf Description: TRANS NPN 2A 60V TO226-3
Produkt ist nicht verfügbar
2SK2962(T6CANO,A,F 2SK2962(T6CANO,A,F Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
2SK2962(T6CANO,F,M 2SK2962(T6CANO,F,M Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
2SK2989(T6CANO,A,F 2SK2989(T6CANO,A,F Toshiba Semiconductor and Storage 2SK2989.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
2SK2989(T6CANO,F,M 2SK2989(T6CANO,F,M Toshiba Semiconductor and Storage 2SK2989.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
TLP5752H(D4TP4,E TLP5752H(D4TP4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP5752H(D4TP4,E TLP5752H(D4TP4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.12 EUR
10+ 2.08 EUR
100+ 1.6 EUR
500+ 1.44 EUR
Mindestbestellmenge: 6
TLP5752H(TP4,E TLP5752H(TP4,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.26 EUR
3000+ 1.19 EUR
Mindestbestellmenge: 1500
TLP5752H(TP4,E TLP5752H(TP4,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 3026 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.17 EUR
10+ 2.11 EUR
100+ 1.62 EUR
500+ 1.46 EUR
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TK1R4S04PB,LXHQ TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB Description: MOSFET N-CH 40V 120A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.35 EUR
Mindestbestellmenge: 2000
TK1R4S04PB,LXHQ TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB Description: MOSFET N-CH 40V 120A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2867 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.99 EUR
10+ 2.49 EUR
100+ 1.98 EUR
500+ 1.68 EUR
1000+ 1.42 EUR
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RN2701,LF RN2701,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2701 Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Produkt ist nicht verfügbar
RN2701,LF RN2701,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2701 Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Produkt ist nicht verfügbar
TD62308APG,J,S TD62308APG,J,S Toshiba Semiconductor and Storage Description: IC DRIVER 4/0 16DIP
Produkt ist nicht verfügbar
TD62308AFG,S,EL TD62308AFG,S,EL Toshiba Semiconductor and Storage docget.jsp?did=21665&prodName=TD62308APG Description: IC DRIVER 4/0 16HSOP
Produkt ist nicht verfügbar
TPH2R306NH1,LQ TPH2R306NH1,LQ Toshiba Semiconductor and Storage TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.06 EUR
10000+ 1.03 EUR
Mindestbestellmenge: 5000
TPH2R306NH1,LQ TPH2R306NH1,LQ Toshiba Semiconductor and Storage TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 13839 Stücke:
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8+2.45 EUR
10+ 2.03 EUR
100+ 1.62 EUR
500+ 1.37 EUR
1000+ 1.16 EUR
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2SA1588-GR,LF 2SA1588-GR,LF Toshiba Semiconductor and Storage 2SA1588_datasheet_en_20210625.pdf?did=19174&prodName=2SA1588 Description: TRANS PNP 30V 0.5A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 8975 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
62+ 0.29 EUR
126+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.081 EUR
Mindestbestellmenge: 42
TC78H660FTG,EL TC78H660FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=68604&prodName=TC78H660FTG Description: 2-CH BRUSHED MOTOR DRIVERS AT 20
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.83 EUR
Mindestbestellmenge: 4000
TC78H660FTG,EL TC78H660FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=68604&prodName=TC78H660FTG Description: 2-CH BRUSHED MOTOR DRIVERS AT 20
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4741 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
11+ 1.74 EUR
25+ 1.65 EUR
100+ 1.36 EUR
250+ 1.27 EUR
500+ 1.12 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 10
TLP2200(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP2200(LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
DF2S23P2CTC,L3F DF2S23P2CTC,L3F Toshiba Semiconductor and Storage DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.13 EUR
Mindestbestellmenge: 10000
DF2S23P2CTC,L3F DF2S23P2CTC,L3F Toshiba Semiconductor and Storage DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 31514 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
38+ 0.46 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
TLP2768A(D4-TP,E TLP2768A(D4-TP,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2768A(D4,E TLP2768A(D4,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR SO6
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TK33S10N1L,LXHQ TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L
TK33S10N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 3849 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
11+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
TLP3052A(F TLP3052AF_datasheet_en_20201022.pdf?did=30349&prodName=TLP3052AF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH
Packaging: Box
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TPHR9003NL1,LQ docget.jsp?did=69022&prodName=TPHR9003NL1
TPHR9003NL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Produkt ist nicht verfügbar
TPHR9003NL1,LQ docget.jsp?did=69022&prodName=TPHR9003NL1
TPHR9003NL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 2195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.45 EUR
10+ 2.03 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.16 EUR
2000+ 1.1 EUR
Mindestbestellmenge: 8
TPHR9203PL1,LQ docget.jsp?did=69038&prodName=TPHR9203PL1
TPHR9203PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.02 EUR
Mindestbestellmenge: 5000
TPHR9203PL1,LQ docget.jsp?did=69038&prodName=TPHR9203PL1
TPHR9203PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
auf Bestellung 16767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.92 EUR
12+ 1.56 EUR
100+ 1.22 EUR
500+ 1.03 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 10
RN4985FE,LF(CT docget.jsp?did=19050&prodName=RN4985FE
RN4985FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR2.2KOHM Q1BER
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.076 EUR
Mindestbestellmenge: 4000
RN4985FE,LF(CT docget.jsp?did=19050&prodName=RN4985FE
RN4985FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR2.2KOHM Q1BER
auf Bestellung 6141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
53+ 0.33 EUR
100+ 0.18 EUR
500+ 0.12 EUR
1000+ 0.079 EUR
2000+ 0.071 EUR
Mindestbestellmenge: 42
TPW1R005PL,L1Q TPW1R005PL_datasheet_en_20191030.pdf?did=56279&prodName=TPW1R005PL
TPW1R005PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 300A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+2.17 EUR
Mindestbestellmenge: 5000
TPW1R005PL,L1Q TPW1R005PL_datasheet_en_20191030.pdf?did=56279&prodName=TPW1R005PL
TPW1R005PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 300A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
auf Bestellung 12903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.65 EUR
10+ 3.9 EUR
100+ 3.15 EUR
500+ 2.8 EUR
1000+ 2.4 EUR
2000+ 2.26 EUR
Mindestbestellmenge: 4
TLP759(TP1,J,F) docget.jsp?did=16868&prodName=TLP759
TLP759(TP1,J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER LOGIC 8DIP GW
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP759(D4-TP1,J,F) docget.jsp?did=16868&prodName=TLP759
TLP759(D4-TP1,J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER LOGIC 8DIP GW
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP759(J,F) docget.jsp?did=16868&prodName=TLP759
TLP759(J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER LOGIC 8DIP T/H
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP759(LF1,J,F) docget.jsp?did=16868&prodName=TLP759
TLP759(LF1,J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER LOGIC 8DIP GW
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP759(D4,J,F) docget.jsp?did=16868&prodName=TLP759
TLP759(D4,J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER LOGIC 8DIP T/H
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP759(D4-LF1,J,F) docget.jsp?did=16868&prodName=TLP759
TLP759(D4-LF1,J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER LOGIC 8DIP GW
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TCR3UM18A,LF docget.jsp?did=63293&prodName=TCR3UM085A
TCR3UM18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA 4DFN
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR3UM18A,LF docget.jsp?did=63293&prodName=TCR3UM085A
TCR3UM18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA 4DFN
auf Bestellung 59582 Stücke:
Lieferzeit 10-14 Tag (e)
TB67H400ANG docget.jsp?did=56940&prodName=TB67H400ANG
TB67H400ANG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 24SDIP
Packaging: Tray
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.28 EUR
10+ 9.23 EUR
25+ 8.73 EUR
80+ 7.56 EUR
230+ 7.17 EUR
440+ 6.44 EUR
Mindestbestellmenge: 2
TCR3UF18A,LM(CT
TCR3UF18A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR3UF18A,LM(CT
TCR3UF18A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA SMV
auf Bestellung 5830 Stücke:
Lieferzeit 10-14 Tag (e)
TLX9291A(GBTPL,F TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A
TLX9291A(GBTPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TLX9291A(GBTPL,F TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A
TLX9291A(GBTPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.19 EUR
10+ 3.67 EUR
100+ 3.01 EUR
Mindestbestellmenge: 4
SSM3J353F,LF SSM3J353F_datasheet_en_20161219.pdf?did=35740&prodName=SSM3J353F
SSM3J353F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.11 EUR
Mindestbestellmenge: 3000
SSM3J372R,LXHF SSM3J372R_datasheet_en_20220629.pdf?did=59199&prodName=SSM3J372R
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
6000+ 0.18 EUR
Mindestbestellmenge: 3000
SSM3J372R,LXHF SSM3J372R_datasheet_en_20220629.pdf?did=59199&prodName=SSM3J372R
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
32+ 0.55 EUR
100+ 0.33 EUR
500+ 0.31 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 25
SSM3J375F,LXHF SSM3J375F_datasheet_en_20220629.pdf?did=59201&prodName=SSM3J375F
SSM3J375F,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.17 EUR
6000+ 0.16 EUR
Mindestbestellmenge: 3000
SSM3J375F,LXHF SSM3J375F_datasheet_en_20220629.pdf?did=59201&prodName=SSM3J375F
SSM3J375F,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 12573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 24
TK40S06N1L,LQ
TK40S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Produkt ist nicht verfügbar
2SA1721OTE85LF 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721
2SA1721OTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SA1721RTE85LF docget.jsp?did=19183&prodName=2SA1721
2SA1721RTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
2SA1721RTE85LF docget.jsp?did=19183&prodName=2SA1721
2SA1721RTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
2SB1457(T6CANO,F,M 2SB1457_2009-12-21.pdf
2SB1457(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 2A 100V TO226-3
Produkt ist nicht verfügbar
2SD2695(T6CANO,A,F 2SD2695_2009-12-21.pdf
2SD2695(T6CANO,A,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 2A 60V TO226-3
Produkt ist nicht verfügbar
2SD2695(T6CANO,F,M 2SD2695_2009-12-21.pdf
2SD2695(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 2A 60V TO226-3
Produkt ist nicht verfügbar
2SK2962(T6CANO,A,F 2SK2962_2009-09-29.pdf
2SK2962(T6CANO,A,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
2SK2962(T6CANO,F,M 2SK2962_2009-09-29.pdf
2SK2962(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
2SK2989(T6CANO,A,F 2SK2989.pdf
2SK2989(T6CANO,A,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
2SK2989(T6CANO,F,M 2SK2989.pdf
2SK2989(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
TLP5752H(D4TP4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5752H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP5752H(D4TP4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5752H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.12 EUR
10+ 2.08 EUR
100+ 1.6 EUR
500+ 1.44 EUR
Mindestbestellmenge: 6
TLP5752H(TP4,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+1.26 EUR
3000+ 1.19 EUR
Mindestbestellmenge: 1500
TLP5752H(TP4,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 3026 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.17 EUR
10+ 2.11 EUR
100+ 1.62 EUR
500+ 1.46 EUR
Mindestbestellmenge: 6
TK1R4S04PB,LXHQ TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB
TK1R4S04PB,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1.35 EUR
Mindestbestellmenge: 2000
TK1R4S04PB,LXHQ TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB
TK1R4S04PB,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.99 EUR
10+ 2.49 EUR
100+ 1.98 EUR
500+ 1.68 EUR
1000+ 1.42 EUR
Mindestbestellmenge: 6
RN2701,LF docget.jsp?did=18900&prodName=RN2701
RN2701,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Produkt ist nicht verfügbar
RN2701,LF docget.jsp?did=18900&prodName=RN2701
RN2701,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Produkt ist nicht verfügbar
TD62308APG,J,S
TD62308APG,J,S
Hersteller: Toshiba Semiconductor and Storage
Description: IC DRIVER 4/0 16DIP
Produkt ist nicht verfügbar
TD62308AFG,S,EL docget.jsp?did=21665&prodName=TD62308APG
TD62308AFG,S,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC DRIVER 4/0 16HSOP
Produkt ist nicht verfügbar
TPH2R306NH1,LQ TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1
TPH2R306NH1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.06 EUR
10000+ 1.03 EUR
Mindestbestellmenge: 5000
TPH2R306NH1,LQ TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1
TPH2R306NH1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 13839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.45 EUR
10+ 2.03 EUR
100+ 1.62 EUR
500+ 1.37 EUR
1000+ 1.16 EUR
2000+ 1.1 EUR
Mindestbestellmenge: 8
2SA1588-GR,LF 2SA1588_datasheet_en_20210625.pdf?did=19174&prodName=2SA1588
2SA1588-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 8975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
62+ 0.29 EUR
126+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.081 EUR
Mindestbestellmenge: 42
TC78H660FTG,EL docget.jsp?did=68604&prodName=TC78H660FTG
TC78H660FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2-CH BRUSHED MOTOR DRIVERS AT 20
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.83 EUR
Mindestbestellmenge: 4000
TC78H660FTG,EL docget.jsp?did=68604&prodName=TC78H660FTG
TC78H660FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2-CH BRUSHED MOTOR DRIVERS AT 20
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.95 EUR
11+ 1.74 EUR
25+ 1.65 EUR
100+ 1.36 EUR
250+ 1.27 EUR
500+ 1.12 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 10
TLP2200(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP2200(LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
DF2S23P2CTC,L3F DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC
DF2S23P2CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.13 EUR
Mindestbestellmenge: 10000
DF2S23P2CTC,L3F DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC
DF2S23P2CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 31514 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
38+ 0.46 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
TLP2768A(D4-TP,E
TLP2768A(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2768A(D4,E
TLP2768A(D4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR SO6
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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