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TLP5705H(D4-TP,E TLP5705H(D4-TP,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
auf Bestellung 1717 Stücke:
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74VHC4020FT 74VHC4020FT Toshiba Semiconductor and Storage docget.jsp?did=15762&prodName=74VHC4020FT Description: IC BINARY COUNTER 14-BIT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-TSSOPB
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 210 MHz
Number of Bits per Element: 14
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74VHC4020FT 74VHC4020FT Toshiba Semiconductor and Storage docget.jsp?did=15762&prodName=74VHC4020FT Description: IC BINARY COUNTER 14-BIT 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-TSSOPB
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 210 MHz
Number of Bits per Element: 14
auf Bestellung 6061 Stücke:
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TCR2LN085,LF TCR2LN085,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN085 Description: IC REG LINEAR 0.85V 200MA 4SDFN
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TCR2LN085,LF TCR2LN085,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN085 Description: IC REG LINEAR 0.85V 200MA 4SDFN
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TCR2LE19,LM(CT TCR2LE19,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE19 Description: IC REG LINEAR 1.9V 200MA ESV
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TCR2LE19,LM(CT TCR2LE19,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE19 Description: IC REG LINEAR 1.9V 200MA ESV
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TCR2LN105,LF TCR2LN105,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN105 Description: IC REG LINEAR 1.05V 200MA 4SDFN
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TCR2LN105,LF TCR2LN105,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN105 Description: IC REG LINEAR 1.05V 200MA 4SDFN
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TCR2LE20,LM(CT TCR2LE20,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE20 Description: IC REG LINEAR 2V 200MA ESV
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TCR2LE20,LM(CT TCR2LE20,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE20 Description: IC REG LINEAR 2V 200MA ESV
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TCR2LN31,LF TCR2LN31,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN31 Description: IC REG LINEAR 3.1V 200MA 4SDFN
Produkt ist nicht verfügbar
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TCR2LN31,LF TCR2LN31,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN31 Description: IC REG LINEAR 3.1V 200MA 4SDFN
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TCR2LN095,LF TCR2LN095,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN095 Description: IC REG LINEAR 0.95V 200MA 4SDFN
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TCR2LN095,LF TCR2LN095,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN095 Description: IC REG LINEAR 0.95V 200MA 4SDFN
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TCR2LN115,LF TCR2LN115,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN115 Description: IC REG LINEAR 1.15V 200MA 4SDFN
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TCR2LN115,LF TCR2LN115,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN115 Description: IC REG LINEAR 1.15V 200MA 4SDFN
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TCR2LF19,LM(CT TCR2LF19,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF19 Description: IC REG LINEAR 1.9V 200MA SMV
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TCR2LF19,LM(CT TCR2LF19,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF19 Description: IC REG LINEAR 1.9V 200MA SMV
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TCR2LN27,LF TCR2LN27,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN27 Description: IC REG LINEAR 2.7V 200MA 4SDFN
Produkt ist nicht verfügbar
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TCR2LN27,LF TCR2LN27,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN27 Description: IC REG LINEAR 2.7V 200MA 4SDFN
auf Bestellung 9450 Stücke:
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TCR2LE285,LM(CT TCR2LE285,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE285 Description: IC REG LINEAR 2.85V 200MA ESV
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TCR2LE285,LM(CT TCR2LE285,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE285 Description: IC REG LINEAR 2.85V 200MA ESV
auf Bestellung 7983 Stücke:
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TCR2LN285,LF TCR2LN285,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN285 Description: IC REG LINEAR 2.85V 200MA 4SDFN
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TCR2LN285,LF TCR2LN285,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN285 Description: IC REG LINEAR 2.85V 200MA 4SDFN
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TCR2LE15,LM(CT TCR2LE15,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE15 Description: IC REG LINEAR 1.5V 200MA ESV
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TCR2LE15,LM(CT TCR2LE15,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE15 Description: IC REG LINEAR 1.5V 200MA ESV
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TCR2LN19,LF TCR2LN19,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN19 Description: IC REG LINEAR 1.9V 200MA 4SDFN
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TCR2LN19,LF TCR2LN19,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN19 Description: IC REG LINEAR 1.9V 200MA 4SDFN
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TCR2LN20,LF TCR2LN20,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN20 Description: IC REG LINEAR 2V 200MA 4SDFN
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TCR2LN20,LF TCR2LN20,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN20 Description: IC REG LINEAR 2V 200MA 4SDFN
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TCR2LN09,LF TCR2LN09,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN09 Description: IC REG LINEAR 0.9V 200MA 4SDFN
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TCR2LN09,LF TCR2LN09,LF Toshiba Semiconductor and Storage docget.jsp?did=15272&prodName=TCR2LN09 Description: IC REG LINEAR 0.9V 200MA 4SDFN
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TCR2LE28,LM(CT TCR2LE28,LM(CT Toshiba Semiconductor and Storage TCR2LE28_datasheet_en_20141106.pdf?did=28807&prodName=TCR2LE28 Description: IC REG LINEAR 2.8V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 150mA
Protection Features: Over Current
auf Bestellung 20000 Stücke:
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TCR2LE28,LM(CT TCR2LE28,LM(CT Toshiba Semiconductor and Storage TCR2LE28_datasheet_en_20141106.pdf?did=28807&prodName=TCR2LE28 Description: IC REG LINEAR 2.8V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 150mA
Protection Features: Over Current
auf Bestellung 22606 Stücke:
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TCR2LN285,LF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=2.85V I=200MA
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TCR2LN285,LF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=2.85V I=200MA
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4N37(SHORT,F) 4N37(SHORT,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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4N37(SHORT-TP5,F) 4N37(SHORT-TP5,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-SMD
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 100mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB6631FNG,EL TB6631FNG,EL Toshiba Semiconductor and Storage TB6631FNG_datasheet_en_20151008.pdf?did=30648&prodName=TB6631FNG Description: IC MOTOR DRIVER 7V-16.5V 30SSOP
Produkt ist nicht verfügbar
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74LCX04FT 74LCX04FT Toshiba Semiconductor and Storage docget.jsp?did=15379&prodName=74LCX04FT Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
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74LCX04FT 74LCX04FT Toshiba Semiconductor and Storage docget.jsp?did=15379&prodName=74LCX04FT Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
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TK2R4A08QM,S4X TK2R4A08QM,S4X Toshiba Semiconductor and Storage docget.jsp?did=70413&prodName=TK2R4A08QM Description: UMOS10 TO-220SIS 80V 2.4MOHM
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 78 Stücke:
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3+7.5 EUR
50+3.81 EUR
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RN46A1(TE85L,F) RN46A1(TE85L,F) Toshiba Semiconductor and Storage Description: PNP + NPN BRT Q1BSR=22KOHM Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms, 10kOhms
Resistor - Emitter Base (R2): 22kOhms, 10kOhms
Supplier Device Package: SM6
Produkt ist nicht verfügbar
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RN46A1(TE85L,F) RN46A1(TE85L,F) Toshiba Semiconductor and Storage Description: PNP + NPN BRT Q1BSR=22KOHM Q1BER
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms, 10kOhms
Resistor - Emitter Base (R2): 22kOhms, 10kOhms
Supplier Device Package: SM6
Produkt ist nicht verfügbar
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HN2S02FU(TE85L,F) HN2S02FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=21830&prodName=HN2S02FU Description: SMALL-SIGNAL SCHOTTKY BARRIER DI
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HN2S02FU(TE85L,F) HN2S02FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=21830&prodName=HN2S02FU Description: SMALL-SIGNAL SCHOTTKY BARRIER DI
auf Bestellung 2866 Stücke:
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SSM3K341TU,LXHF SSM3K341TU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=56017&prodName=SSM3K341TU Description: AECQ MOSFET NCH 60V 6A SOT323F
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
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SSM3K341TU,LXHF SSM3K341TU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=56017&prodName=SSM3K341TU Description: AECQ MOSFET NCH 60V 6A SOT323F
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
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SSM6K809R,LXHF SSM6K809R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=63955&prodName=SSM6K809R Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSM6K809R,LXHF SSM6K809R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=63955&prodName=SSM6K809R Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
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16+1.33 EUR
50+0.99 EUR
100+0.87 EUR
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HN1A01FU-Y,LXHF HN1A01FU-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19142&prodName=HN1A01FU Description: TRANS 2PNP DUAL 50V 150MA US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: US6
Qualification: AEC-Q101
Grade: Automotive
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HN1A01FU-Y,LXHF HN1A01FU-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19142&prodName=HN1A01FU Description: TRANS 2PNP DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5891 Stücke:
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61+0.35 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
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TBD62064APG,HZ TBD62064APG,HZ Toshiba Semiconductor and Storage TBD62064APG_datasheet_en_20151217.pdf?did=30811&prodName=TBD62064APG Description: IC PWR DRIVER N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
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10+3.08 EUR
25+2.81 EUR
100+2.51 EUR
250+2.37 EUR
500+2.28 EUR
1000+2.21 EUR
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SSM6J216FE,LF SSM6J216FE,LF Toshiba Semiconductor and Storage docget.jsp?did=13806&prodName=SSM6J216FE Description: MOSFET P-CHANNEL 12V 4.8A ES6
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SSM6J216FE,LF SSM6J216FE,LF Toshiba Semiconductor and Storage docget.jsp?did=13806&prodName=SSM6J216FE Description: MOSFET P-CHANNEL 12V 4.8A ES6
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TK560P65Y,RQ TK560P65Y,RQ Toshiba Semiconductor and Storage TK560P65Y_datasheet_en_20161214.pdf?did=55408&prodName=TK560P65Y Description: MOSFET N-CHANNEL 650V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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TK560P65Y,RQ TK560P65Y,RQ Toshiba Semiconductor and Storage TK560P65Y_datasheet_en_20161214.pdf?did=55408&prodName=TK560P65Y Description: MOSFET N-CHANNEL 650V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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10+2.18 EUR
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TK290P65Y,RQ TK290P65Y,RQ Toshiba Semiconductor and Storage TK290P65Y_datasheet_en_20161115.pdf?did=55288&prodName=TK290P65Y Description: MOSFET N-CH 650V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 450µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TK290P65Y,RQ TK290P65Y,RQ Toshiba Semiconductor and Storage TK290P65Y_datasheet_en_20161115.pdf?did=55288&prodName=TK290P65Y Description: MOSFET N-CH 650V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 450µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1998 Stücke:
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6+3.56 EUR
10+2.98 EUR
100+2.37 EUR
500+2 EUR
1000+1.7 EUR
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TLP5705H(D4-TP,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
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74VHC4020FT docget.jsp?did=15762&prodName=74VHC4020FT
74VHC4020FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 14-BIT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-TSSOPB
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 210 MHz
Number of Bits per Element: 14
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2500+0.24 EUR
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74VHC4020FT docget.jsp?did=15762&prodName=74VHC4020FT
74VHC4020FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 14-BIT 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-TSSOPB
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 210 MHz
Number of Bits per Element: 14
auf Bestellung 6061 Stücke:
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38+0.57 EUR
53+0.39 EUR
60+0.35 EUR
100+0.3 EUR
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500+0.26 EUR
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TCR2LN085,LF docget.jsp?did=15272&prodName=TCR2LN085
TCR2LN085,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.85V 200MA 4SDFN
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TCR2LN085,LF docget.jsp?did=15272&prodName=TCR2LN085
TCR2LN085,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.85V 200MA 4SDFN
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TCR2LE19,LM(CT docget.jsp?did=28807&prodName=TCR2LE19
TCR2LE19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA ESV
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TCR2LE19,LM(CT docget.jsp?did=28807&prodName=TCR2LE19
TCR2LE19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA ESV
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TCR2LN105,LF docget.jsp?did=15272&prodName=TCR2LN105
TCR2LN105,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 200MA 4SDFN
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TCR2LN105,LF docget.jsp?did=15272&prodName=TCR2LN105
TCR2LN105,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 200MA 4SDFN
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TCR2LE20,LM(CT docget.jsp?did=28807&prodName=TCR2LE20
TCR2LE20,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA ESV
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TCR2LE20,LM(CT docget.jsp?did=28807&prodName=TCR2LE20
TCR2LE20,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA ESV
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TCR2LN31,LF docget.jsp?did=15272&prodName=TCR2LN31
TCR2LN31,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.1V 200MA 4SDFN
Produkt ist nicht verfügbar
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TCR2LN31,LF docget.jsp?did=15272&prodName=TCR2LN31
TCR2LN31,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.1V 200MA 4SDFN
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TCR2LN095,LF docget.jsp?did=15272&prodName=TCR2LN095
TCR2LN095,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.95V 200MA 4SDFN
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10000+0.17 EUR
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TCR2LN095,LF docget.jsp?did=15272&prodName=TCR2LN095
TCR2LN095,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.95V 200MA 4SDFN
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25+0.83 EUR
33+0.64 EUR
37+0.57 EUR
100+0.39 EUR
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500+0.27 EUR
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TCR2LN115,LF docget.jsp?did=15272&prodName=TCR2LN115
TCR2LN115,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.15V 200MA 4SDFN
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TCR2LN115,LF docget.jsp?did=15272&prodName=TCR2LN115
TCR2LN115,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.15V 200MA 4SDFN
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TCR2LF19,LM(CT docget.jsp?did=28807&prodName=TCR2LF19
TCR2LF19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA SMV
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TCR2LF19,LM(CT docget.jsp?did=28807&prodName=TCR2LF19
TCR2LF19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA SMV
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TCR2LN27,LF docget.jsp?did=15272&prodName=TCR2LN27
TCR2LN27,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.7V 200MA 4SDFN
Produkt ist nicht verfügbar
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TCR2LN27,LF docget.jsp?did=15272&prodName=TCR2LN27
TCR2LN27,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.7V 200MA 4SDFN
auf Bestellung 9450 Stücke:
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TCR2LE285,LM(CT docget.jsp?did=28807&prodName=TCR2LE285
TCR2LE285,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 200MA ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 4000 Stücke
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TCR2LE285,LM(CT docget.jsp?did=28807&prodName=TCR2LE285
TCR2LE285,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 200MA ESV
auf Bestellung 7983 Stücke:
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TCR2LN285,LF docget.jsp?did=15272&prodName=TCR2LN285
TCR2LN285,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 200MA 4SDFN
auf Bestellung 10000 Stücke:
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TCR2LN285,LF docget.jsp?did=15272&prodName=TCR2LN285
TCR2LN285,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 200MA 4SDFN
auf Bestellung 10000 Stücke:
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TCR2LE15,LM(CT docget.jsp?did=28807&prodName=TCR2LE15
TCR2LE15,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 200MA ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.17 EUR
Mindestbestellmenge: 4000 Stücke
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TCR2LE15,LM(CT docget.jsp?did=28807&prodName=TCR2LE15
TCR2LE15,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 200MA ESV
auf Bestellung 7985 Stücke:
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25+0.86 EUR
34+0.63 EUR
39+0.55 EUR
100+0.36 EUR
250+0.3 EUR
500+0.24 EUR
1000+0.18 EUR
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TCR2LN19,LF docget.jsp?did=15272&prodName=TCR2LN19
TCR2LN19,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA 4SDFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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TCR2LN19,LF docget.jsp?did=15272&prodName=TCR2LN19
TCR2LN19,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA 4SDFN
auf Bestellung 9900 Stücke:
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TCR2LN20,LF docget.jsp?did=15272&prodName=TCR2LN20
TCR2LN20,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA 4SDFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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TCR2LN20,LF docget.jsp?did=15272&prodName=TCR2LN20
TCR2LN20,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA 4SDFN
auf Bestellung 7777 Stücke:
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TCR2LN09,LF docget.jsp?did=15272&prodName=TCR2LN09
TCR2LN09,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 200MA 4SDFN
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 10000 Stücke
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TCR2LN09,LF docget.jsp?did=15272&prodName=TCR2LN09
TCR2LN09,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 200MA 4SDFN
auf Bestellung 10000 Stücke:
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TCR2LE28,LM(CT TCR2LE28_datasheet_en_20141106.pdf?did=28807&prodName=TCR2LE28
TCR2LE28,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 150mA
Protection Features: Over Current
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.14 EUR
8000+0.13 EUR
12000+0.11 EUR
Mindestbestellmenge: 4000 Stücke
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TCR2LE28,LM(CT TCR2LE28_datasheet_en_20141106.pdf?did=28807&prodName=TCR2LE28
TCR2LE28,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 150mA
Protection Features: Over Current
auf Bestellung 22606 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
38+0.56 EUR
43+0.49 EUR
100+0.32 EUR
250+0.26 EUR
500+0.21 EUR
1000+0.15 EUR
Mindestbestellmenge: 28 Stücke
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TCR2LN285,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.85V I=200MA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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TCR2LN285,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.85V I=200MA
Produkt ist nicht verfügbar
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4N37(SHORT,F)
4N37(SHORT,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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4N37(SHORT-TP5,F)
4N37(SHORT-TP5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-SMD
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 100mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB6631FNG,EL TB6631FNG_datasheet_en_20151008.pdf?did=30648&prodName=TB6631FNG
TB6631FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 7V-16.5V 30SSOP
Produkt ist nicht verfügbar
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74LCX04FT docget.jsp?did=15379&prodName=74LCX04FT
74LCX04FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.27 EUR
5000+0.25 EUR
7500+0.24 EUR
Mindestbestellmenge: 2500 Stücke
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74LCX04FT docget.jsp?did=15379&prodName=74LCX04FT
74LCX04FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
auf Bestellung 11289 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
28+0.76 EUR
34+0.63 EUR
100+0.48 EUR
250+0.4 EUR
500+0.36 EUR
1000+0.31 EUR
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TK2R4A08QM,S4X docget.jsp?did=70413&prodName=TK2R4A08QM
TK2R4A08QM,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 2.4MOHM
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.5 EUR
50+3.81 EUR
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RN46A1(TE85L,F)
RN46A1(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR=22KOHM Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms, 10kOhms
Resistor - Emitter Base (R2): 22kOhms, 10kOhms
Supplier Device Package: SM6
Produkt ist nicht verfügbar
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RN46A1(TE85L,F)
RN46A1(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR=22KOHM Q1BER
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms, 10kOhms
Resistor - Emitter Base (R2): 22kOhms, 10kOhms
Supplier Device Package: SM6
Produkt ist nicht verfügbar
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HN2S02FU(TE85L,F) docget.jsp?did=21830&prodName=HN2S02FU
HN2S02FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL-SIGNAL SCHOTTKY BARRIER DI
Produkt ist nicht verfügbar
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HN2S02FU(TE85L,F) docget.jsp?did=21830&prodName=HN2S02FU
HN2S02FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL-SIGNAL SCHOTTKY BARRIER DI
auf Bestellung 2866 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM3K341TU,LXHF docget.jsp?did=56017&prodName=SSM3K341TU
SSM3K341TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT323F
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.45 EUR
6000+0.42 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3K341TU,LXHF docget.jsp?did=56017&prodName=SSM3K341TU
SSM3K341TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT323F
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9699 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 12 Stücke
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SSM6K809R,LXHF docget.jsp?did=63955&prodName=SSM6K809R
SSM6K809R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM6K809R,LXHF docget.jsp?did=63955&prodName=SSM6K809R
SSM6K809R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2272 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
16+1.33 EUR
50+0.99 EUR
100+0.87 EUR
500+0.68 EUR
Mindestbestellmenge: 10 Stücke
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HN1A01FU-Y,LXHF docget.jsp?did=19142&prodName=HN1A01FU
HN1A01FU-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: US6
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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HN1A01FU-Y,LXHF docget.jsp?did=19142&prodName=HN1A01FU
HN1A01FU-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5891 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
61+0.35 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 38 Stücke
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TBD62064APG,HZ TBD62064APG_datasheet_en_20151217.pdf?did=30811&prodName=TBD62064APG
TBD62064APG,HZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 1124 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.16 EUR
10+3.08 EUR
25+2.81 EUR
100+2.51 EUR
250+2.37 EUR
500+2.28 EUR
1000+2.21 EUR
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SSM6J216FE,LF docget.jsp?did=13806&prodName=SSM6J216FE
SSM6J216FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CHANNEL 12V 4.8A ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM6J216FE,LF docget.jsp?did=13806&prodName=SSM6J216FE
SSM6J216FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CHANNEL 12V 4.8A ES6
auf Bestellung 6514 Stücke:
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TK560P65Y,RQ TK560P65Y_datasheet_en_20161214.pdf?did=55408&prodName=TK560P65Y
TK560P65Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 650V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.98 EUR
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TK560P65Y,RQ TK560P65Y_datasheet_en_20161214.pdf?did=55408&prodName=TK560P65Y
TK560P65Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 650V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4878 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.42 EUR
10+2.18 EUR
100+1.46 EUR
500+1.15 EUR
1000+1.06 EUR
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TK290P65Y,RQ TK290P65Y_datasheet_en_20161115.pdf?did=55288&prodName=TK290P65Y
TK290P65Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 450µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK290P65Y,RQ TK290P65Y_datasheet_en_20161115.pdf?did=55288&prodName=TK290P65Y
TK290P65Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 450µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.56 EUR
10+2.98 EUR
100+2.37 EUR
500+2 EUR
1000+1.7 EUR
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