Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13445) > Seite 159 nach 225
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2SA1586-Y(T5LND,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SSM3K16CT,L3F | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K16CT,L3F | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
auf Bestellung 35350 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K347R,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K347R,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V |
auf Bestellung 12430 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J50TU,LF | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SSM6J50TU,LF | Toshiba Semiconductor and Storage |
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auf Bestellung 3461 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPH7R204PL,LQ | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TB6584AFNG | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TB6586BFG,EL,DRY | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SSM6J801R,LF | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SSM6J801R,LF | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
CMH07(TE12L,Q,M) | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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HN1C01FU-GR,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1C01FU-GR,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1C01FU-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1C01FU-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
auf Bestellung 5870 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67Z800FTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 36-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Current - Output / Channel: 3A Voltage - Load: 5.5V ~ 22V Supplier Device Package: 36-VQFN (5x5) Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO Load Type: Inductive, Capacitive Part Status: Active |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67Z800FTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 36-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Current - Output / Channel: 3A Voltage - Load: 5.5V ~ 22V Supplier Device Package: 36-VQFN (5x5) Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO Load Type: Inductive, Capacitive Part Status: Active |
auf Bestellung 10873 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1B04FU-GR,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1B04FU-GR,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5998 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1B04FU-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1B04FU-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5950 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1B04FE-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1B04FE-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7998 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1B04FE-GR,LXHF | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HN1B04FE-GR,LXHF | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SSM3K361TU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
auf Bestellung 7744 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4902FE,LXHF(CT | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN4902FE,LXHF(CT | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
TC35679FSG-002 | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 60-VFQFN Exposed Pad Sensitivity: -93dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v4.2 Current - Receiving: 3.3mA Current - Transmitting: 3.3mA Supplier Device Package: 60-QFN (7x7) RF Family/Standard: Bluetooth Serial Interfaces: I²C, SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TC3567CFSG-002(E1C | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -93.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz ~ 2.4835GHz Memory Size: 128kB Flash, 51kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v4.2 Current - Receiving: 3.3mA Data Rate (Max): 921.6kbps Current - Transmitting: 3.3mA Supplier Device Package: 40-QFN (5x5) GPIO: 17 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TC3567CFSG-002(ELG | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -93.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz ~ 2.4835GHz Memory Size: 128kB Flash, 51kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v4.2 Current - Receiving: 3.3mA Data Rate (Max): 921.6kbps Current - Transmitting: 3.3mA Supplier Device Package: 40-QFN (5x5) GPIO: 17 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TC3567DFSG-002(E1C | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -93.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz ~ 2.4835GHz Memory Size: 51kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.8V Power - Output: 0dBm Protocol: Bluetooth v4.2 Current - Receiving: 3.3mA Data Rate (Max): 921.6kbps Current - Transmitting: 3.3mA Supplier Device Package: 40-QFN (5x5) GPIO: 17 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TC3567DFSG-002(ELG | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -93.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz ~ 2.4835GHz Memory Size: 51kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.8V Power - Output: 0dBm Protocol: Bluetooth v4.2 Current - Receiving: 3.3mA Data Rate (Max): 921.6kbps Current - Transmitting: 3.3mA Supplier Device Package: 40-QFN (5x5) GPIO: 17 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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RN2906FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2906FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP2110(TP,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.53V Data Rate: 5MBd Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 11ns, 13ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Number of Channels: 2 Current - Output / Channel: 10 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
TLP2118(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER SO8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TLP2118(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER SO8 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TC9591XBG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-VFBGA Mounting Type: Surface Mount Type: Bridge Supplier Device Package: 80-VFBGA (7x7) Grade: Automotive DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC9591XBG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 80-VFBGA Mounting Type: Surface Mount Type: Bridge Supplier Device Package: 80-VFBGA (7x7) Grade: Automotive DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC9593XBG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-VFBGA Mounting Type: Surface Mount Type: Bridge Supplier Device Package: 64-VFBGA (6x6) Grade: Automotive DigiKey Programmable: Not Verified |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TC9593XBG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 64-VFBGA Mounting Type: Surface Mount Type: Bridge Supplier Device Package: 64-VFBGA (6x6) Grade: Automotive DigiKey Programmable: Not Verified |
auf Bestellung 7496 Stücke: Lieferzeit 10-14 Tag (e) |
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TC9590XBG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-LFBGA Mounting Type: Surface Mount Type: Bridge Supplier Device Package: 64-LFBGA (7x7) Part Status: Active Grade: Automotive DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC9590XBG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 64-LFBGA Mounting Type: Surface Mount Type: Bridge Supplier Device Package: 64-LFBGA (7x7) Part Status: Active Grade: Automotive DigiKey Programmable: Not Verified |
auf Bestellung 572 Stücke: Lieferzeit 10-14 Tag (e) |
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TC9594XBG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-VFBGA Mounting Type: Surface Mount Type: Bridge Supplier Device Package: 80-VFBGA (7x7) Grade: Automotive DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC9592XBG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 49-VFBGA Mounting Type: Surface Mount Type: Bridge Supplier Device Package: 49-VFBGA (5x5) Grade: Automotive DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC9595XBG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-VFBGA Mounting Type: Surface Mount Type: Bridge Supplier Device Package: 80-VFBGA (7x7) Grade: Automotive DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
TC358748XBG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-VFBGA Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 1.8V ~ 3.3V Applications: Camera Supplier Device Package: 80-VFBGA (7x7) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SC5201(T6MURATAFM | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TB9120FTG(EL) | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TB9120FTG(EL) | Toshiba Semiconductor and Storage |
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auf Bestellung 1970 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DF2S5.6CT,L3F | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No Part Status: Active |
auf Bestellung 30139 Stücke: Lieferzeit 10-14 Tag (e) |
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4N35(SHORT-LF1,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR TRANS Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
4N35(SHORT-LF5,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR TRANS Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
4N35(SHORT-TP1,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR TRANS Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
4N35(SHORT-TP5,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR TRANS Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLP185(V4GRTL,SE | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
TLP185(YL-TPL,SE | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
2SA1586-Y(T5LND,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSM3K16CT,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.064 EUR |
SSM3K16CT,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 35350 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 0.51 EUR |
52+ | 0.34 EUR |
106+ | 0.17 EUR |
500+ | 0.14 EUR |
1000+ | 0.096 EUR |
2000+ | 0.083 EUR |
5000+ | 0.077 EUR |
SSM3K347R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.16 EUR |
6000+ | 0.15 EUR |
9000+ | 0.14 EUR |
SSM3K347R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
auf Bestellung 12430 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 0.72 EUR |
35+ | 0.5 EUR |
100+ | 0.25 EUR |
500+ | 0.23 EUR |
1000+ | 0.18 EUR |
SSM6J50TU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.5A UF6
Description: MOSFET P-CH 20V 2.5A UF6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSM6J50TU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.5A UF6
Description: MOSFET P-CH 20V 2.5A UF6
auf Bestellung 3461 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
TPH7R204PL,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Description: MOSFET N-CH 40V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TB6584AFNG |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 6V-16.5V 30SSOP
Description: IC MOTOR DRIVER 6V-16.5V 30SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TB6586BFG,EL,DRY |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 6.5V-16.5V 24SSOP
Description: IC MOTOR DRVR 6.5V-16.5V 24SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSM6J801R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6TSOP
Description: MOSFET P-CH 20V 6A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSM6J801R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6TSOP
Description: MOSFET P-CH 20V 6A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CMH07(TE12L,Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 2A M-FLAT
Description: DIODE GEN PURP 200V 2A M-FLAT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HN1C01FU-GR,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.2 EUR |
HN1C01FU-GR,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 0.99 EUR |
HN1C01FU-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.22 EUR |
HN1C01FU-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 5870 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.97 EUR |
30+ | 0.59 EUR |
100+ | 0.38 EUR |
500+ | 0.29 EUR |
1000+ | 0.26 EUR |
TB67Z800FTG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2000+ | 1.84 EUR |
TB67Z800FTG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Cut Tape (CT)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Cut Tape (CT)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
auf Bestellung 10873 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.97 EUR |
10+ | 3.82 EUR |
25+ | 3.26 EUR |
100+ | 2.63 EUR |
250+ | 2.31 EUR |
500+ | 2.12 EUR |
1000+ | 1.96 EUR |
HN1B04FU-GR,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.14 EUR |
HN1B04FU-GR,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5998 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 0.48 EUR |
49+ | 0.36 EUR |
100+ | 0.22 EUR |
500+ | 0.2 EUR |
1000+ | 0.14 EUR |
HN1B04FU-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.14 EUR |
HN1B04FU-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 0.48 EUR |
49+ | 0.36 EUR |
100+ | 0.22 EUR |
500+ | 0.2 EUR |
1000+ | 0.14 EUR |
HN1B04FE-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.2 EUR |
HN1B04FE-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 0.7 EUR |
30+ | 0.6 EUR |
100+ | 0.41 EUR |
500+ | 0.32 EUR |
1000+ | 0.26 EUR |
2000+ | 0.23 EUR |
HN1B04FE-GR,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HN1B04FE-GR,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSM3K361TU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: MOSFET N-CH 100V 3.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 7744 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.18 EUR |
25+ | 0.73 EUR |
100+ | 0.47 EUR |
500+ | 0.36 EUR |
1000+ | 0.32 EUR |
RN4902FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN4902FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC35679FSG-002 |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 60-VFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Current - Transmitting: 3.3mA
Supplier Device Package: 60-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 60-VFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Current - Transmitting: 3.3mA
Supplier Device Package: 60-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC3567CFSG-002(E1C |
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 128kB Flash, 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 128kB Flash, 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC3567CFSG-002(ELG |
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 128kB Flash, 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 128kB Flash, 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC3567DFSG-002(E1C |
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.8V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.8V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC3567DFSG-002(ELG |
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.8V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.8V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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RN2906FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.13 EUR |
RN2906FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.63 EUR |
45+ | 0.39 EUR |
100+ | 0.25 EUR |
500+ | 0.18 EUR |
1000+ | 0.16 EUR |
2000+ | 0.15 EUR |
TLP2110(TP,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 2
Current - Output / Channel: 10 mA
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 2
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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TLP2118(TP,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER SO8
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER SO8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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TC9591XBG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BRIDGE 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 80-VFBGA (7x7)
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC BRIDGE 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 80-VFBGA (7x7)
Grade: Automotive
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC9591XBG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BRIDGE 80VFBGA
Packaging: Cut Tape (CT)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 80-VFBGA (7x7)
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC BRIDGE 80VFBGA
Packaging: Cut Tape (CT)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 80-VFBGA (7x7)
Grade: Automotive
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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TC9593XBG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BRIDGE 64VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 64-VFBGA (6x6)
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC BRIDGE 64VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 64-VFBGA (6x6)
Grade: Automotive
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 6.32 EUR |
TC9593XBG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BRIDGE 64VFBGA
Packaging: Cut Tape (CT)
Package / Case: 64-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 64-VFBGA (6x6)
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC BRIDGE 64VFBGA
Packaging: Cut Tape (CT)
Package / Case: 64-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 64-VFBGA (6x6)
Grade: Automotive
DigiKey Programmable: Not Verified
auf Bestellung 7496 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 14.52 EUR |
10+ | 9.79 EUR |
25+ | 8.55 EUR |
100+ | 7.15 EUR |
250+ | 6.46 EUR |
500+ | 6.32 EUR |
TC9590XBG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BRIDGE 64LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 64-LFBGA (7x7)
Part Status: Active
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC BRIDGE 64LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 64-LFBGA (7x7)
Part Status: Active
Grade: Automotive
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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TC9590XBG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BRIDGE 64LFBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 64-LFBGA (7x7)
Part Status: Active
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC BRIDGE 64LFBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 64-LFBGA (7x7)
Part Status: Active
Grade: Automotive
DigiKey Programmable: Not Verified
auf Bestellung 572 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 19.45 EUR |
10+ | 13.69 EUR |
25+ | 12.21 EUR |
100+ | 10.56 EUR |
250+ | 9.75 EUR |
500+ | 9.27 EUR |
TC9594XBG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BRIDGE 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 80-VFBGA (7x7)
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC BRIDGE 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 80-VFBGA (7x7)
Grade: Automotive
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC9592XBG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BRIDGE 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 49-VFBGA (5x5)
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC BRIDGE 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 49-VFBGA (5x5)
Grade: Automotive
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC9595XBG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BRIDGE 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 80-VFBGA (7x7)
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC BRIDGE 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Type: Bridge
Supplier Device Package: 80-VFBGA (7x7)
Grade: Automotive
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC358748XBG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC INTFACE SPECIALIZED 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 1.8V ~ 3.3V
Applications: Camera
Supplier Device Package: 80-VFBGA (7x7)
Description: IC INTFACE SPECIALIZED 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 1.8V ~ 3.3V
Applications: Camera
Supplier Device Package: 80-VFBGA (7x7)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SC5201(T6MURATAFM |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 600V 0.05A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 900 mW
Description: TRANS NPN 600V 0.05A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TB9120FTG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE STEPPING MOTOR DRIVER
Description: AUTOMOTIVE STEPPING MOTOR DRIVER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TB9120FTG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE STEPPING MOTOR DRIVER
Description: AUTOMOTIVE STEPPING MOTOR DRIVER
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
DF2S5.6CT,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 30139 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 0.32 EUR |
61+ | 0.29 EUR |
112+ | 0.16 EUR |
500+ | 0.097 EUR |
1000+ | 0.066 EUR |
2000+ | 0.056 EUR |
5000+ | 0.051 EUR |
4N35(SHORT-LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR TRANS
Packaging: Tube
Part Status: Obsolete
Description: OPTOISOLATOR TRANS
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
4N35(SHORT-LF5,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR TRANS
Packaging: Tube
Part Status: Obsolete
Description: OPTOISOLATOR TRANS
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
4N35(SHORT-TP1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR TRANS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: OPTOISOLATOR TRANS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
4N35(SHORT-TP5,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR TRANS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: OPTOISOLATOR TRANS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP185(V4GRTL,SE |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS W/BASE 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANS W/BASE 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP185(YL-TPL,SE |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH