Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13523) > Seite 157 nach 226

Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 152 153 154 155 156 157 158 159 160 161 162 176 198 220 226  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TCR3RM09A,LF TCR3RM09A,LF Toshiba Semiconductor and Storage docget.jsp?did=69842&prodName=TCR3RM33A Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR3RM09A,LF TCR3RM09A,LF Toshiba Semiconductor and Storage docget.jsp?did=69842&prodName=TCR3RM33A Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1832-Y,LXHF 2SA1832-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Power - Max: 120 mW
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1832-Y,LXHF 2SA1832-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3681 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
55+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1832-GR,LXHF 2SA1832-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1832-GR,LXHF 2SA1832-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
55+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP137(BV,F) Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP137(BV-TPL,F) Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP137(BV-TPR,F) Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-MFSOP, 5 Lead
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP137(TPL,F) Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-MFSOP, 5 Lead
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP137(TPR,F) Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-MFSOP, 5 Lead
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2402,LXHF RN2402,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2404 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2402,LXHF RN2402,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2404 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.61 EUR
57+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2302,LXHF RN2302,LXHF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2302,LXHF RN2302,LXHF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP240D(F TLP240D(F Toshiba Semiconductor and Storage TLP240D_datasheet_en_20230525.pdf?did=13993&prodName=TLP240D Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.28 EUR
10+2.34 EUR
100+1.78 EUR
500+1.54 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP240D(LF1,F TLP240D(LF1,F Toshiba Semiconductor and Storage TLP240D_datasheet_en_20230525.pdf?did=13993&prodName=TLP240D Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.71 EUR
10+2.38 EUR
100+1.7 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74VCX245FK(EL) TC74VCX245FK(EL) Toshiba Semiconductor and Storage TC74VCX245FK_datasheet_en_20210518.pdf?did=69961&prodName=TC74VCX245FK Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74VCX245FK(EL) TC74VCX245FK(EL) Toshiba Semiconductor and Storage TC74VCX245FK_datasheet_en_20210518.pdf?did=69961&prodName=TC74VCX245FK Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-GR,LXHF 2SA1586-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-GR,LXHF 2SA1586-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.58 EUR
60+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-Y,LXHF 2SA1586-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-Y,LXHF 2SA1586-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3466 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.58 EUR
60+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1588-O,LF 2SA1588-O,LF Toshiba Semiconductor and Storage docget.jsp?did=19174&prodName=2SA1588 Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.08 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-Y(T5LND,F) 2SA1586-Y(T5LND,F) Toshiba Semiconductor and Storage 2SA1586_20210706.pdf Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K16CT,L3F SSM3K16CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=5960&prodName=SSM3K16CT Description: MOSFET N-CH 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K16CT,L3F SSM3K16CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=5960&prodName=SSM3K16CT Description: MOSFET N-CH 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 6059 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.48 EUR
72+0.29 EUR
116+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.09 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K347R,LF SSM3K347R,LF Toshiba Semiconductor and Storage SSM3K347R_datasheet_en_20160930.pdf?did=37095&prodName=SSM3K347R Description: MOSFET N-CH 38V 2A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Drain to Source Voltage (Vdss): 38 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K347R,LF SSM3K347R,LF Toshiba Semiconductor and Storage SSM3K347R_datasheet_en_20160930.pdf?did=37095&prodName=SSM3K347R Description: MOSFET N-CH 38V 2A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Drain to Source Voltage (Vdss): 38 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 12430 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.86 EUR
35+0.6 EUR
100+0.3 EUR
500+0.27 EUR
1000+0.21 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J50TU,LF SSM6J50TU,LF Toshiba Semiconductor and Storage docget.jsp?did=21131&prodName=SSM6J50TU Description: MOSFET P-CH 20V 2.5A UF6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J50TU,LF SSM6J50TU,LF Toshiba Semiconductor and Storage docget.jsp?did=21131&prodName=SSM6J50TU Description: MOSFET P-CH 20V 2.5A UF6
auf Bestellung 3461 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TPH7R204PL,LQ TPH7R204PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=55434&prodName=TPH7R204PL Description: MOSFET N-CH 40V 48A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.5 EUR
6000+0.49 EUR
9000+0.46 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB6584AFNG TB6584AFNG Toshiba Semiconductor and Storage docget.jsp?did=36043&prodName=TB6584AFNG Description: IC MOTOR DRIVER 6V-16.5V 30SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB6586BFG,EL,DRY TB6586BFG,EL,DRY Toshiba Semiconductor and Storage docget.jsp?did=36848&prodName=TB6586BFG Description: IC MOTOR DRVR 6.5V-16.5V 24SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J801R,LF SSM6J801R,LF Toshiba Semiconductor and Storage docget.jsp?did=55608&prodName=SSM6J801R Description: MOSFET P-CH 20V 6A 6TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J801R,LF SSM6J801R,LF Toshiba Semiconductor and Storage docget.jsp?did=55608&prodName=SSM6J801R Description: MOSFET P-CH 20V 6A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FU-GR,LXHF HN1C01FU-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19152&prodName=HN1C01FU Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FU-GR,LXHF HN1C01FU-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19152&prodName=HN1C01FU Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.19 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FU-Y,LXHF HN1C01FU-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19152&prodName=HN1C01FU Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FU-Y,LXHF HN1C01FU-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19152&prodName=HN1C01FU Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 5870 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.15 EUR
30+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67Z800FTG,EL TB67Z800FTG,EL Toshiba Semiconductor and Storage TB67Z800FTG_datasheet_en_20180316.pdf?did=15381&prodName=TB67Z800FTG Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+2.19 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67Z800FTG,EL TB67Z800FTG,EL Toshiba Semiconductor and Storage TB67Z800FTG_datasheet_en_20180316.pdf?did=15381&prodName=TB67Z800FTG Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Cut Tape (CT)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
auf Bestellung 10873 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.1 EUR
10+4.55 EUR
25+3.88 EUR
100+3.13 EUR
250+2.75 EUR
500+2.52 EUR
1000+2.33 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FU-GR,LXHF HN1B04FU-GR,LXHF Toshiba Semiconductor and Storage HN1B04FU_datasheet_en_20220304.pdf?did=19150&prodName=HN1B04FU Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FU-GR,LXHF HN1B04FU-GR,LXHF Toshiba Semiconductor and Storage HN1B04FU_datasheet_en_20220304.pdf?did=19150&prodName=HN1B04FU Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5998 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
49+0.43 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FU-Y,LXHF HN1B04FU-Y,LXHF Toshiba Semiconductor and Storage HN1B04FU_datasheet_en_20220304.pdf?did=19150&prodName=HN1B04FU Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FU-Y,LXHF HN1B04FU-Y,LXHF Toshiba Semiconductor and Storage HN1B04FU_datasheet_en_20220304.pdf?did=19150&prodName=HN1B04FU Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
49+0.43 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-Y,LXHF HN1B04FE-Y,LXHF Toshiba Semiconductor and Storage HN1B04FE_datasheet_en_20220118.pdf?did=22308&prodName=HN1B04FE Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.24 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-Y,LXHF HN1B04FE-Y,LXHF Toshiba Semiconductor and Storage HN1B04FE_datasheet_en_20220118.pdf?did=22308&prodName=HN1B04FE Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
30+0.71 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.31 EUR
2000+0.27 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-GR,LXHF HN1B04FE-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=22308&prodName=HN1B04FE Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-GR,LXHF HN1B04FE-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=22308&prodName=HN1B04FE Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K361TU,LF SSM3K361TU,LF Toshiba Semiconductor and Storage docget.jsp?did=56019&prodName=SSM3K361TU Description: MOSFET N-CH 100V 3.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 6402 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.51 EUR
23+0.94 EUR
100+0.61 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4902FE,LXHF(CT RN4902FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19020&prodName=RN4902FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4902FE,LXHF(CT RN4902FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19020&prodName=RN4902FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC35679FSG-002 Toshiba Semiconductor and Storage TC35679FSG-002_Web.pdf Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Current - Transmitting: 3.3mA
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -93dBm
Package / Case: 60-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: I²C, SPI, UART
RF Family/Standard: Bluetooth
Supplier Device Package: 60-QFN (7x7)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC3567CFSG-002(E1C Toshiba Semiconductor and Storage Description: IC RF TXRX BLUETOOTH QFN
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 128kB Flash, 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
DigiKey Programmable: Not Verified
Part Status: Obsolete
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC3567CFSG-002(ELG Toshiba Semiconductor and Storage Description: IC RF TXRX BLUETOOTH QFN
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 128kB Flash, 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC3567DFSG-002(E1C Toshiba Semiconductor and Storage Description: IC RF TXRX BLUETOOTH QFN
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.8V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC3567DFSG-002(ELG Toshiba Semiconductor and Storage Description: IC RF TXRX BLUETOOTH QFN
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.8V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2906FE,LXHF(CT RN2906FE,LXHF(CT Toshiba Semiconductor and Storage RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2906FE,LXHF(CT RN2906FE,LXHF(CT Toshiba Semiconductor and Storage RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
45+0.46 EUR
100+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR3RM09A,LF docget.jsp?did=69842&prodName=TCR3RM33A
TCR3RM09A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR3RM09A,LF docget.jsp?did=69842&prodName=TCR3RM33A
TCR3RM09A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1832-Y,LXHF docget.jsp?did=19185&prodName=2SA1832
2SA1832-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Power - Max: 120 mW
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1832-Y,LXHF docget.jsp?did=19185&prodName=2SA1832
2SA1832-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3681 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
55+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1832-GR,LXHF docget.jsp?did=19185&prodName=2SA1832
2SA1832-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1832-GR,LXHF docget.jsp?did=19185&prodName=2SA1832
2SA1832-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
55+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP137(BV,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP137(BV-TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP137(BV-TPR,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-MFSOP, 5 Lead
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP137(TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-MFSOP, 5 Lead
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP137(TPR,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-MFSOP, 5 Lead
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2402,LXHF docget.jsp?did=18874&prodName=RN2404
RN2402,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2402,LXHF docget.jsp?did=18874&prodName=RN2404
RN2402,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
57+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2302,LXHF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2302,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2302,LXHF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2302,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP240D(F TLP240D_datasheet_en_20230525.pdf?did=13993&prodName=TLP240D
TLP240D(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.28 EUR
10+2.34 EUR
100+1.78 EUR
500+1.54 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP240D(LF1,F TLP240D_datasheet_en_20230525.pdf?did=13993&prodName=TLP240D
TLP240D(LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
10+2.38 EUR
100+1.7 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74VCX245FK(EL) TC74VCX245FK_datasheet_en_20210518.pdf?did=69961&prodName=TC74VCX245FK
TC74VCX245FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74VCX245FK(EL) TC74VCX245FK_datasheet_en_20210518.pdf?did=69961&prodName=TC74VCX245FK
TC74VCX245FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-GR,LXHF docget.jsp?did=19170&prodName=2SA1586
2SA1586-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-GR,LXHF docget.jsp?did=19170&prodName=2SA1586
2SA1586-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
60+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-Y,LXHF docget.jsp?did=19170&prodName=2SA1586
2SA1586-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-Y,LXHF docget.jsp?did=19170&prodName=2SA1586
2SA1586-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3466 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
60+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1588-O,LF docget.jsp?did=19174&prodName=2SA1588
2SA1588-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.08 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-Y(T5LND,F) 2SA1586_20210706.pdf
2SA1586-Y(T5LND,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K16CT,L3F docget.jsp?did=5960&prodName=SSM3K16CT
SSM3K16CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K16CT,L3F docget.jsp?did=5960&prodName=SSM3K16CT
SSM3K16CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 6059 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
72+0.29 EUR
116+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.09 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K347R,LF SSM3K347R_datasheet_en_20160930.pdf?did=37095&prodName=SSM3K347R
SSM3K347R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Drain to Source Voltage (Vdss): 38 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K347R,LF SSM3K347R_datasheet_en_20160930.pdf?did=37095&prodName=SSM3K347R
SSM3K347R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Drain to Source Voltage (Vdss): 38 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 12430 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
35+0.6 EUR
100+0.3 EUR
500+0.27 EUR
1000+0.21 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J50TU,LF docget.jsp?did=21131&prodName=SSM6J50TU
SSM6J50TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.5A UF6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J50TU,LF docget.jsp?did=21131&prodName=SSM6J50TU
SSM6J50TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.5A UF6
auf Bestellung 3461 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TPH7R204PL,LQ docget.jsp?did=55434&prodName=TPH7R204PL
TPH7R204PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 48A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.5 EUR
6000+0.49 EUR
9000+0.46 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB6584AFNG docget.jsp?did=36043&prodName=TB6584AFNG
TB6584AFNG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 6V-16.5V 30SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB6586BFG,EL,DRY docget.jsp?did=36848&prodName=TB6586BFG
TB6586BFG,EL,DRY
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 6.5V-16.5V 24SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J801R,LF docget.jsp?did=55608&prodName=SSM6J801R
SSM6J801R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J801R,LF docget.jsp?did=55608&prodName=SSM6J801R
SSM6J801R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FU-GR,LXHF docget.jsp?did=19152&prodName=HN1C01FU
HN1C01FU-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FU-GR,LXHF docget.jsp?did=19152&prodName=HN1C01FU
HN1C01FU-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FU-Y,LXHF docget.jsp?did=19152&prodName=HN1C01FU
HN1C01FU-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FU-Y,LXHF docget.jsp?did=19152&prodName=HN1C01FU
HN1C01FU-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 5870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
30+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67Z800FTG,EL TB67Z800FTG_datasheet_en_20180316.pdf?did=15381&prodName=TB67Z800FTG
TB67Z800FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+2.19 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67Z800FTG,EL TB67Z800FTG_datasheet_en_20180316.pdf?did=15381&prodName=TB67Z800FTG
TB67Z800FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Cut Tape (CT)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
auf Bestellung 10873 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.1 EUR
10+4.55 EUR
25+3.88 EUR
100+3.13 EUR
250+2.75 EUR
500+2.52 EUR
1000+2.33 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FU-GR,LXHF HN1B04FU_datasheet_en_20220304.pdf?did=19150&prodName=HN1B04FU
HN1B04FU-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FU-GR,LXHF HN1B04FU_datasheet_en_20220304.pdf?did=19150&prodName=HN1B04FU
HN1B04FU-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
49+0.43 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FU-Y,LXHF HN1B04FU_datasheet_en_20220304.pdf?did=19150&prodName=HN1B04FU
HN1B04FU-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FU-Y,LXHF HN1B04FU_datasheet_en_20220304.pdf?did=19150&prodName=HN1B04FU
HN1B04FU-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
49+0.43 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-Y,LXHF HN1B04FE_datasheet_en_20220118.pdf?did=22308&prodName=HN1B04FE
HN1B04FE-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.24 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-Y,LXHF HN1B04FE_datasheet_en_20220118.pdf?did=22308&prodName=HN1B04FE
HN1B04FE-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
30+0.71 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.31 EUR
2000+0.27 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-GR,LXHF docget.jsp?did=22308&prodName=HN1B04FE
HN1B04FE-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-GR,LXHF docget.jsp?did=22308&prodName=HN1B04FE
HN1B04FE-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K361TU,LF docget.jsp?did=56019&prodName=SSM3K361TU
SSM3K361TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 6402 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.51 EUR
23+0.94 EUR
100+0.61 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4902FE,LXHF(CT docget.jsp?did=19020&prodName=RN4902FE
RN4902FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4902FE,LXHF(CT docget.jsp?did=19020&prodName=RN4902FE
RN4902FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC35679FSG-002 TC35679FSG-002_Web.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Current - Transmitting: 3.3mA
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -93dBm
Package / Case: 60-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: I²C, SPI, UART
RF Family/Standard: Bluetooth
Supplier Device Package: 60-QFN (7x7)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC3567CFSG-002(E1C
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 128kB Flash, 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
DigiKey Programmable: Not Verified
Part Status: Obsolete
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC3567CFSG-002(ELG
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 128kB Flash, 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC3567DFSG-002(E1C
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.8V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC3567DFSG-002(ELG
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.8V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2906FE,LXHF(CT RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE
RN2906FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2906FE,LXHF(CT RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE
RN2906FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
45+0.46 EUR
100+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 152 153 154 155 156 157 158 159 160 161 162 176 198 220 226  [ Nächste Seite >> ]