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TK28V65W5,LQ TK28V65W5,LQ Toshiba Semiconductor and Storage TK28V65W5_datasheet_en_20160830.pdf?did=52955&prodName=TK28V65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+5.22 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TK28V65W5,LQ TK28V65W5,LQ Toshiba Semiconductor and Storage TK28V65W5_datasheet_en_20160830.pdf?did=52955&prodName=TK28V65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.11 EUR
10+8.20 EUR
100+5.99 EUR
500+5.22 EUR
Mindestbestellmenge: 2
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TK28V65W,LQ TK28V65W,LQ Toshiba Semiconductor and Storage TK28V65W_datasheet_en_20151225.pdf?did=30291&prodName=TK28V65W Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+3.79 EUR
Mindestbestellmenge: 2500
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TK28V65W,LQ TK28V65W,LQ Toshiba Semiconductor and Storage TK28V65W_datasheet_en_20151225.pdf?did=30291&prodName=TK28V65W Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 4966 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.62 EUR
10+7.84 EUR
100+5.71 EUR
500+4.94 EUR
Mindestbestellmenge: 2
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TK31Z60X,S1F TK31Z60X,S1F Toshiba Semiconductor and Storage TK31Z60X_datasheet_en_20171206.pdf?did=30412&prodName=TK31Z60X Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.88 EUR
10+19.75 EUR
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TPH1R204PL1,LQ TPH1R204PL1,LQ Toshiba Semiconductor and Storage TPH1R204PL1_datasheet_en_20200626.pdf?did=69120&prodName=TPH1R204PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.97 EUR
Mindestbestellmenge: 5000
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TPH1R204PL1,LQ TPH1R204PL1,LQ Toshiba Semiconductor and Storage TPH1R204PL1_datasheet_en_20200626.pdf?did=69120&prodName=TPH1R204PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 12899 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.20 EUR
10+2.22 EUR
100+1.51 EUR
500+1.20 EUR
1000+1.07 EUR
2000+1.02 EUR
Mindestbestellmenge: 6
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TB67S209FTG(O,EL) TB67S209FTG(O,EL) Toshiba Semiconductor and Storage TB67S209FTG_datasheet_en_20161027.pdf?did=55411&prodName=TB67S209FTG Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
Produkt ist nicht verfügbar
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TB67S209FTG(O,EL) TB67S209FTG(O,EL) Toshiba Semiconductor and Storage TB67S209FTG_datasheet_en_20161027.pdf?did=55411&prodName=TB67S209FTG Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
auf Bestellung 3733 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.16 EUR
10+3.34 EUR
25+2.87 EUR
100+2.46 EUR
Mindestbestellmenge: 4
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TLP3109(TP,F Toshiba Semiconductor and Storage docget.jsp?did=29899&prodName=TLP3109 Description: SSR RELAY SPST-NO 2A 0-100V
Produkt ist nicht verfügbar
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TLP3109(F Toshiba Semiconductor and Storage docget.jsp?did=29899&prodName=TLP3109 Description: SSR RELAY SPST-NO 2A 0-100V
Produkt ist nicht verfügbar
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CUS357,H3F CUS357,H3F Toshiba Semiconductor and Storage CUS357_datasheet_en_20230708.pdf?did=13247&prodName=CUS357 Description: DIODE SCHOTTKY 40V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 11pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 12000 Stücke:
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3000+0.04 EUR
6000+0.04 EUR
Mindestbestellmenge: 3000
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CUS357,H3F CUS357,H3F Toshiba Semiconductor and Storage CUS357_datasheet_en_20230708.pdf?did=13247&prodName=CUS357 Description: DIODE SCHOTTKY 40V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 11pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 14310 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
107+0.17 EUR
184+0.10 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 63
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TK33S10N1L,LXHQ TK33S10N1L,LXHQ Toshiba Semiconductor and Storage TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.87 EUR
Mindestbestellmenge: 2000
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TK33S10N1L,LXHQ TK33S10N1L,LXHQ Toshiba Semiconductor and Storage TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 3536 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.01 EUR
10+1.92 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
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TLP3052A(F TLP3052A(F Toshiba Semiconductor and Storage TLP3052AF_datasheet_en_20201022.pdf?did=30349&prodName=TLP3052AF Description: MOSFET N-CH
Packaging: Box
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TPHR9003NL1,LQ TPHR9003NL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69022&prodName=TPHR9003NL1 Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Produkt ist nicht verfügbar
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TPHR9003NL1,LQ TPHR9003NL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69022&prodName=TPHR9003NL1 Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.77 EUR
10+2.42 EUR
Mindestbestellmenge: 5
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TPHR9203PL1,LQ TPHR9203PL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69038&prodName=TPHR9203PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
Produkt ist nicht verfügbar
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TPHR9203PL1,LQ TPHR9203PL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69038&prodName=TPHR9203PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
auf Bestellung 6098 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.66 EUR
10+2.35 EUR
100+1.60 EUR
500+1.27 EUR
1000+1.17 EUR
2000+1.08 EUR
Mindestbestellmenge: 5
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RN4985FE,LF(CT RN4985FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19050&prodName=RN4985FE Description: NPN + PNP BRT Q1BSR2.2KOHM Q1BER
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.08 EUR
Mindestbestellmenge: 4000
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RN4985FE,LF(CT RN4985FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19050&prodName=RN4985FE Description: NPN + PNP BRT Q1BSR2.2KOHM Q1BER
auf Bestellung 6141 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
53+0.33 EUR
100+0.18 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 42
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TPW1R005PL,L1Q TPW1R005PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=56279&prodName=TPW1R005PL Description: MOSFET N-CH 45V 300A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
Produkt ist nicht verfügbar
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TPW1R005PL,L1Q TPW1R005PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=56279&prodName=TPW1R005PL Description: MOSFET N-CH 45V 300A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.63 EUR
10+3.91 EUR
100+2.83 EUR
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TLP759(TP1,J,F) TLP759(TP1,J,F) Toshiba Semiconductor and Storage TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759 Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP759(D4-TP1,J,F) TLP759(D4-TP1,J,F) Toshiba Semiconductor and Storage TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759 Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP759(J,F) TLP759(J,F) Toshiba Semiconductor and Storage TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759 Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP759(LF1,J,F) TLP759(LF1,J,F) Toshiba Semiconductor and Storage TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759 Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP759(D4,J,F) TLP759(D4,J,F) Toshiba Semiconductor and Storage TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759 Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP759(D4-LF1,J,F) TLP759(D4-LF1,J,F) Toshiba Semiconductor and Storage TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759 Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TCR3UM18A,LF TCR3UM18A,LF Toshiba Semiconductor and Storage docget.jsp?did=63293&prodName=TCR3UM085A Description: IC REG LINEAR 1.8V 300MA 4DFN
auf Bestellung 50000 Stücke:
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TCR3UM18A,LF TCR3UM18A,LF Toshiba Semiconductor and Storage docget.jsp?did=63293&prodName=TCR3UM085A Description: IC REG LINEAR 1.8V 300MA 4DFN
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TB67H400ANG TB67H400ANG Toshiba Semiconductor and Storage TB67H400ANG_datasheet_en_20161222.pdf?did=56940&prodName=TB67H400ANG Description: IC MOTOR DRIVER 24SDIP
Packaging: Tray
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 833 Stücke:
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3+8.20 EUR
10+5.45 EUR
25+4.73 EUR
80+4.66 EUR
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TCR3UF18A,LM(CT TCR3UF18A,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.8V 300MA SMV
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TCR3UF18A,LM(CT TCR3UF18A,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.8V 300MA SMV
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TLX9291A(GBTPL,F TLX9291A(GBTPL,F Toshiba Semiconductor and Storage TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
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2500+2.31 EUR
5000+2.24 EUR
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TLX9291A(GBTPL,F TLX9291A(GBTPL,F Toshiba Semiconductor and Storage TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 7142 Stücke:
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4+5.84 EUR
10+3.93 EUR
100+2.94 EUR
500+2.56 EUR
1000+2.44 EUR
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SSM3J353F,LF SSM3J353F,LF Toshiba Semiconductor and Storage SSM3J353F_datasheet_en_20161219.pdf?did=35740&prodName=SSM3J353F Description: MOSFET P-CH 30V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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SSM3J372R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59199&prodName=SSM3J372R Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
6000+0.18 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
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SSM3J372R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59199&prodName=SSM3J372R Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 12848 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 21
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SSM3J375F,LXHF SSM3J375F,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59201&prodName=SSM3J375F Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
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SSM3J375F,LXHF SSM3J375F,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59201&prodName=SSM3J375F Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 17764 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.70 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.20 EUR
Mindestbestellmenge: 25
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TK40S06N1L,LQ TK40S06N1L,LQ Toshiba Semiconductor and Storage datasheet_en_20200624.pdf?did=30110 Description: MOSFET N-CH 60V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.62 EUR
Mindestbestellmenge: 2000
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2SA1721OTE85LF 2SA1721OTE85LF Toshiba Semiconductor and Storage 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SA1721RTE85LF 2SA1721RTE85LF Toshiba Semiconductor and Storage docget.jsp?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
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2SA1721RTE85LF 2SA1721RTE85LF Toshiba Semiconductor and Storage docget.jsp?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
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2SB1457(T6CANO,F,M 2SB1457(T6CANO,F,M Toshiba Semiconductor and Storage 2SB1457_2009-12-21.pdf Description: TRANS PNP 2A 100V TO226-3
Produkt ist nicht verfügbar
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2SD2695(T6CANO,A,F 2SD2695(T6CANO,A,F Toshiba Semiconductor and Storage 2SD2695_2009-12-21.pdf Description: TRANS NPN 2A 60V TO226-3
Produkt ist nicht verfügbar
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2SD2695(T6CANO,F,M 2SD2695(T6CANO,F,M Toshiba Semiconductor and Storage 2SD2695_2009-12-21.pdf Description: TRANS NPN 2A 60V TO226-3
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2SK2962(T6CANO,A,F 2SK2962(T6CANO,A,F Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SK2962(T6CANO,F,M 2SK2962(T6CANO,F,M Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SK2989(T6CANO,A,F 2SK2989(T6CANO,A,F Toshiba Semiconductor and Storage 2SK2989.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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2SK2989(T6CANO,F,M 2SK2989(T6CANO,F,M Toshiba Semiconductor and Storage 2SK2989.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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TLP5752H(D4TP4,E TLP5752H(D4TP4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP5752H(D4TP4,E TLP5752H(D4TP4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1445 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.36 EUR
10+2.40 EUR
100+1.83 EUR
500+1.58 EUR
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TLP5752H(TP4,E TLP5752H(TP4,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.45 EUR
Mindestbestellmenge: 1500
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TLP5752H(TP4,E TLP5752H(TP4,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2835 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.36 EUR
10+2.40 EUR
100+1.83 EUR
500+1.58 EUR
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TK1R4S04PB,LXHQ TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB Description: MOSFET N-CH 40V 120A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.32 EUR
Mindestbestellmenge: 2000
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TK1R4S04PB,LXHQ TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB Description: MOSFET N-CH 40V 120A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 4738 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.36 EUR
10+2.82 EUR
100+1.93 EUR
500+1.56 EUR
1000+1.44 EUR
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RN2701,LF RN2701,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2701 Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Produkt ist nicht verfügbar
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TK28V65W5,LQ TK28V65W5_datasheet_en_20160830.pdf?did=52955&prodName=TK28V65W5
TK28V65W5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+5.22 EUR
Mindestbestellmenge: 2500
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TK28V65W5,LQ TK28V65W5_datasheet_en_20160830.pdf?did=52955&prodName=TK28V65W5
TK28V65W5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.11 EUR
10+8.20 EUR
100+5.99 EUR
500+5.22 EUR
Mindestbestellmenge: 2
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TK28V65W,LQ TK28V65W_datasheet_en_20151225.pdf?did=30291&prodName=TK28V65W
TK28V65W,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.79 EUR
Mindestbestellmenge: 2500
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TK28V65W,LQ TK28V65W_datasheet_en_20151225.pdf?did=30291&prodName=TK28V65W
TK28V65W,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13.8A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 4966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.62 EUR
10+7.84 EUR
100+5.71 EUR
500+4.94 EUR
Mindestbestellmenge: 2
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TK31Z60X,S1F TK31Z60X_datasheet_en_20171206.pdf?did=30412&prodName=TK31Z60X
TK31Z60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 11 Stücke:
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Anzahl Preis
1+21.88 EUR
10+19.75 EUR
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TPH1R204PL1,LQ TPH1R204PL1_datasheet_en_20200626.pdf?did=69120&prodName=TPH1R204PL1
TPH1R204PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.97 EUR
Mindestbestellmenge: 5000
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TPH1R204PL1,LQ TPH1R204PL1_datasheet_en_20200626.pdf?did=69120&prodName=TPH1R204PL1
TPH1R204PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 12899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.20 EUR
10+2.22 EUR
100+1.51 EUR
500+1.20 EUR
1000+1.07 EUR
2000+1.02 EUR
Mindestbestellmenge: 6
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TB67S209FTG(O,EL) TB67S209FTG_datasheet_en_20161027.pdf?did=55411&prodName=TB67S209FTG
TB67S209FTG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
Produkt ist nicht verfügbar
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TB67S209FTG(O,EL) TB67S209FTG_datasheet_en_20161027.pdf?did=55411&prodName=TB67S209FTG
TB67S209FTG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
auf Bestellung 3733 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.16 EUR
10+3.34 EUR
25+2.87 EUR
100+2.46 EUR
Mindestbestellmenge: 4
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TLP3109(TP,F docget.jsp?did=29899&prodName=TLP3109
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-100V
Produkt ist nicht verfügbar
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TLP3109(F docget.jsp?did=29899&prodName=TLP3109
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-100V
Produkt ist nicht verfügbar
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CUS357,H3F CUS357_datasheet_en_20230708.pdf?did=13247&prodName=CUS357
CUS357,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 11pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.04 EUR
6000+0.04 EUR
Mindestbestellmenge: 3000
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CUS357,H3F CUS357_datasheet_en_20230708.pdf?did=13247&prodName=CUS357
CUS357,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 11pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 14310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
107+0.17 EUR
184+0.10 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 63
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TK33S10N1L,LXHQ TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L
TK33S10N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.87 EUR
Mindestbestellmenge: 2000
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TK33S10N1L,LXHQ TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L
TK33S10N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 3536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+1.92 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
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TLP3052A(F TLP3052AF_datasheet_en_20201022.pdf?did=30349&prodName=TLP3052AF
TLP3052A(F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH
Packaging: Box
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TPHR9003NL1,LQ docget.jsp?did=69022&prodName=TPHR9003NL1
TPHR9003NL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Produkt ist nicht verfügbar
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TPHR9003NL1,LQ docget.jsp?did=69022&prodName=TPHR9003NL1
TPHR9003NL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=78W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.42 EUR
Mindestbestellmenge: 5
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TPHR9203PL1,LQ docget.jsp?did=69038&prodName=TPHR9203PL1
TPHR9203PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPHR9203PL1,LQ docget.jsp?did=69038&prodName=TPHR9203PL1
TPHR9203PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
auf Bestellung 6098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.35 EUR
100+1.60 EUR
500+1.27 EUR
1000+1.17 EUR
2000+1.08 EUR
Mindestbestellmenge: 5
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RN4985FE,LF(CT docget.jsp?did=19050&prodName=RN4985FE
RN4985FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR2.2KOHM Q1BER
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.08 EUR
Mindestbestellmenge: 4000
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RN4985FE,LF(CT docget.jsp?did=19050&prodName=RN4985FE
RN4985FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR2.2KOHM Q1BER
auf Bestellung 6141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
53+0.33 EUR
100+0.18 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 42
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TPW1R005PL,L1Q docget.jsp?did=56279&prodName=TPW1R005PL
TPW1R005PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 300A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
Produkt ist nicht verfügbar
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TPW1R005PL,L1Q docget.jsp?did=56279&prodName=TPW1R005PL
TPW1R005PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 300A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.63 EUR
10+3.91 EUR
100+2.83 EUR
Mindestbestellmenge: 4
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TLP759(TP1,J,F) TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759
TLP759(TP1,J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP759(D4-TP1,J,F) TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759
TLP759(D4-TP1,J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP759(J,F) TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759
TLP759(J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP759(LF1,J,F) TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759
TLP759(LF1,J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP759(D4,J,F) TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759
TLP759(D4,J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP759(D4-LF1,J,F) TLP759_datasheet_en_20190610.pdf?did=16868&prodName=TLP759
TLP759(D4-LF1,J,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR3UM18A,LF docget.jsp?did=63293&prodName=TCR3UM085A
TCR3UM18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA 4DFN
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR3UM18A,LF docget.jsp?did=63293&prodName=TCR3UM085A
TCR3UM18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA 4DFN
auf Bestellung 59582 Stücke:
Lieferzeit 10-14 Tag (e)
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TB67H400ANG TB67H400ANG_datasheet_en_20161222.pdf?did=56940&prodName=TB67H400ANG
TB67H400ANG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 24SDIP
Packaging: Tray
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.20 EUR
10+5.45 EUR
25+4.73 EUR
80+4.66 EUR
Mindestbestellmenge: 3
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TCR3UF18A,LM(CT
TCR3UF18A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR3UF18A,LM(CT
TCR3UF18A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA SMV
auf Bestellung 5830 Stücke:
Lieferzeit 10-14 Tag (e)
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TLX9291A(GBTPL,F TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A
TLX9291A(GBTPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.31 EUR
5000+2.24 EUR
Mindestbestellmenge: 2500
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TLX9291A(GBTPL,F TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A
TLX9291A(GBTPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 7142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.84 EUR
10+3.93 EUR
100+2.94 EUR
500+2.56 EUR
1000+2.44 EUR
Mindestbestellmenge: 4
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SSM3J353F,LF SSM3J353F_datasheet_en_20161219.pdf?did=35740&prodName=SSM3J353F
SSM3J353F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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SSM3J372R,LXHF docget.jsp?did=59199&prodName=SSM3J372R
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.18 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
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SSM3J372R,LXHF docget.jsp?did=59199&prodName=SSM3J372R
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 12848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 21
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SSM3J375F,LXHF docget.jsp?did=59201&prodName=SSM3J375F
SSM3J375F,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
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SSM3J375F,LXHF docget.jsp?did=59201&prodName=SSM3J375F
SSM3J375F,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 17764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.20 EUR
Mindestbestellmenge: 25
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TK40S06N1L,LQ datasheet_en_20200624.pdf?did=30110
TK40S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.62 EUR
Mindestbestellmenge: 2000
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2SA1721OTE85LF 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721
2SA1721OTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SA1721RTE85LF docget.jsp?did=19183&prodName=2SA1721
2SA1721RTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
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2SA1721RTE85LF docget.jsp?did=19183&prodName=2SA1721
2SA1721RTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
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2SB1457(T6CANO,F,M 2SB1457_2009-12-21.pdf
2SB1457(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 2A 100V TO226-3
Produkt ist nicht verfügbar
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2SD2695(T6CANO,A,F 2SD2695_2009-12-21.pdf
2SD2695(T6CANO,A,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 2A 60V TO226-3
Produkt ist nicht verfügbar
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2SD2695(T6CANO,F,M 2SD2695_2009-12-21.pdf
2SD2695(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 2A 60V TO226-3
Produkt ist nicht verfügbar
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2SK2962(T6CANO,A,F 2SK2962_2009-09-29.pdf
2SK2962(T6CANO,A,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SK2962(T6CANO,F,M 2SK2962_2009-09-29.pdf
2SK2962(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SK2989(T6CANO,A,F 2SK2989.pdf
2SK2989(T6CANO,A,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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2SK2989(T6CANO,F,M 2SK2989.pdf
2SK2989(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(D4TP4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5752H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP5752H(D4TP4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5752H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.40 EUR
100+1.83 EUR
500+1.58 EUR
Mindestbestellmenge: 6
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TLP5752H(TP4,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.45 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(TP4,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.40 EUR
100+1.83 EUR
500+1.58 EUR
Mindestbestellmenge: 6
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TK1R4S04PB,LXHQ TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB
TK1R4S04PB,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.32 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK1R4S04PB,LXHQ TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB
TK1R4S04PB,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 4738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.36 EUR
10+2.82 EUR
100+1.93 EUR
500+1.56 EUR
1000+1.44 EUR
Mindestbestellmenge: 5
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RN2701,LF docget.jsp?did=18900&prodName=RN2701
RN2701,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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