Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13063) > Seite 156 nach 218
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TLP531(GR-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(GRL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(MBS,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(BL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(Y-LF5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(MBSIN-TP5,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(BL-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(BL-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(YG,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(HIT-BL-L1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(GR-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(Y-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(HIT-BL-T1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(BL-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(HIT-BL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(MBS-TP5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(Y,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(GR,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TLP531(GB,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
TK90S06N1L,LXHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 90A DPAK |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
TK90S06N1L,LXHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 90A DPAK |
auf Bestellung 2175 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
RN1105MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
RN1105MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 26586 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
TC74HC7292AP(F) | Toshiba Semiconductor and Storage |
Description: IC OSC CLOCK CMOS LOGIC 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Type: Clock Oscillator Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-DIP Part Status: Not For New Designs Current - Supply: 4 µA |
Produkt ist nicht verfügbar |
||||||||||||||
TLP781F(D4-FUNGR,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
||||||||||||||
TK1K2A60F,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 6A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 630µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V |
Produkt ist nicht verfügbar |
||||||||||||||
SSM6J214FE(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 3.6A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
auf Bestellung 19825 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
TK2K2A60F,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 350µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V |
Produkt ist nicht verfügbar |
||||||||||||||
2SC4682,T6CSF(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 15V 3A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
||||||||||||||
2SC4682,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 15V 3A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
||||||||||||||
KIA78L12BP | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR LDO 12V DIP Packaging: Bulk |
Produkt ist nicht verfügbar |
||||||||||||||
TLP7830(D4-LF4,E | Toshiba Semiconductor and Storage | Description: IC OP AMP ISOLATION SO8 |
Produkt ist nicht verfügbar |
||||||||||||||
TODX2355(F) | Toshiba Semiconductor and Storage |
Description: TXRX MOD OPTICAL 10MBPS 650NM Packaging: Bulk Connector Type: JIS F07 Wavelength: 650nm Mounting Type: Through Hole Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Data Rate: 10Mbps |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
2SC3672-O(T2ASH,FM | Toshiba Semiconductor and Storage | Description: TRANS NPN 100MA 300V SC71 |
Produkt ist nicht verfügbar |
||||||||||||||
TK110U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=190W F=1MHZ Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
TK110U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=190W F=1MHZ Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
auf Bestellung 3960 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
TK110P10PL,RQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V |
Produkt ist nicht verfügbar |
||||||||||||||
TK110P10PL,RQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V |
auf Bestellung 1033 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
TK11S10N1L,LXHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 11A DPAK |
Produkt ist nicht verfügbar |
||||||||||||||
TK11S10N1L,LXHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 11A DPAK |
Produkt ist nicht verfügbar |
||||||||||||||
CEZ36V,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 36VWM 63VC ESC |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
CEZ36V,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 36VWM 63VC ESC |
auf Bestellung 15621 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSZ36V,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 36VWM 63VC SMINI |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSZ36V,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 36VWM 63VC SMINI |
auf Bestellung 5897 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MUZ36V,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 36VWM 63VC USM |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
MUZ36V,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 36VWM 63VC USM |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
CUZ36V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 36VWM 63VC USC |
Produkt ist nicht verfügbar |
||||||||||||||
CUZ36V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 36VWM 63VC USC |
auf Bestellung 1812 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
KIA78DL05PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 5V TO220 |
Produkt ist nicht verfügbar |
||||||||||||||
KIA78DL06PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 6V TO220 |
Produkt ist nicht verfügbar |
||||||||||||||
KIA78DL08PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 8V TO220 |
Produkt ist nicht verfügbar |
||||||||||||||
KIA78DL09PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 9V TO220 |
Produkt ist nicht verfügbar |
||||||||||||||
KIA78DL10PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 10V TO220 |
Produkt ist nicht verfügbar |
||||||||||||||
KIA78DL15PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 15V TO220 |
Produkt ist nicht verfügbar |
||||||||||||||
7UL1T126FU,LF | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 3.6V USV |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
7UL1T126FU,LF | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 3.6V USV |
auf Bestellung 5970 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
7UL1T125FU,LF | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 3.6V USV |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
7UL1T125FU,LF | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 3.6V USV |
auf Bestellung 5786 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
7UL2G126FK,LF | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 3.6V US8 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
TLP531(GR-LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(GRL,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(MBS,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(BL,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(Y-LF5,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(MBSIN-TP5,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(BL-LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(BL-TP1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(YG,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(HIT-BL-L1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(GR-LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(Y-LF2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(HIT-BL-T1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(BL-LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(HIT-BL,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(MBS-TP5,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(Y,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(GR,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP531(GB,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TK90S06N1L,LXHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A DPAK
Description: MOSFET N-CH 60V 90A DPAK
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)TK90S06N1L,LXHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A DPAK
Description: MOSFET N-CH 60V 90A DPAK
auf Bestellung 2175 Stücke:
Lieferzeit 10-14 Tag (e)RN1105MFV,L3F(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.046 EUR |
16000+ | 0.039 EUR |
RN1105MFV,L3F(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 26586 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.28 EUR |
88+ | 0.2 EUR |
163+ | 0.11 EUR |
500+ | 0.085 EUR |
1000+ | 0.059 EUR |
2000+ | 0.049 EUR |
TC74HC7292AP(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC OSC CLOCK CMOS LOGIC 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Clock Oscillator
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-DIP
Part Status: Not For New Designs
Current - Supply: 4 µA
Description: IC OSC CLOCK CMOS LOGIC 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Clock Oscillator
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-DIP
Part Status: Not For New Designs
Current - Supply: 4 µA
Produkt ist nicht verfügbar
TLP781F(D4-FUNGR,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
TK1K2A60F,S4X |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 630µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V
Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 630µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V
Produkt ist nicht verfügbar
SSM6J214FE(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 3.6A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: MOSFET P-CH 30V 3.6A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 19825 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
34+ | 0.53 EUR |
100+ | 0.32 EUR |
500+ | 0.29 EUR |
1000+ | 0.2 EUR |
2000+ | 0.18 EUR |
TK2K2A60F,S4X |
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 350µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 350µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
Produkt ist nicht verfügbar
2SC4682,T6CSF(J |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
2SC4682,T6F(J |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
KIA78L12BP |
Produkt ist nicht verfügbar
TLP7830(D4-LF4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: IC OP AMP ISOLATION SO8
Description: IC OP AMP ISOLATION SO8
Produkt ist nicht verfügbar
TODX2355(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.35 EUR |
15+ | 19.87 EUR |
2SC3672-O(T2ASH,FM |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100MA 300V SC71
Description: TRANS NPN 100MA 300V SC71
Produkt ist nicht verfügbar
TK110U65Z,RQ |
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 3.39 EUR |
TK110U65Z,RQ |
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 3960 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.97 EUR |
10+ | 5.85 EUR |
100+ | 4.73 EUR |
500+ | 4.21 EUR |
1000+ | 3.6 EUR |
TK110P10PL,RQ |
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Produkt ist nicht verfügbar
TK110P10PL,RQ |
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 1033 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.5 EUR |
15+ | 1.23 EUR |
100+ | 0.95 EUR |
500+ | 0.81 EUR |
1000+ | 0.66 EUR |
TK11S10N1L,LXHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Description: MOSFET N-CH 100V 11A DPAK
Produkt ist nicht verfügbar
TK11S10N1L,LXHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Description: MOSFET N-CH 100V 11A DPAK
Produkt ist nicht verfügbar
CEZ36V,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC ESC
Description: TVS DIODE 36VWM 63VC ESC
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.091 EUR |
CEZ36V,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC ESC
Description: TVS DIODE 36VWM 63VC ESC
auf Bestellung 15621 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
36+ | 0.49 EUR |
100+ | 0.26 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
2000+ | 0.1 EUR |
MSZ36V,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC SMINI
Description: TVS DIODE 36VWM 63VC SMINI
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
MSZ36V,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC SMINI
Description: TVS DIODE 36VWM 63VC SMINI
auf Bestellung 5897 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
32+ | 0.55 EUR |
100+ | 0.29 EUR |
500+ | 0.19 EUR |
1000+ | 0.13 EUR |
MUZ36V,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USM
Description: TVS DIODE 36VWM 63VC USM
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)MUZ36V,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USM
Description: TVS DIODE 36VWM 63VC USM
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)CUZ36V,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USC
Description: TVS DIODE 36VWM 63VC USC
Produkt ist nicht verfügbar
CUZ36V,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USC
Description: TVS DIODE 36VWM 63VC USC
auf Bestellung 1812 Stücke:
Lieferzeit 10-14 Tag (e)KIA78DL05PI |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 5V TO220
Description: IC REG LINEAR LDO 5V TO220
Produkt ist nicht verfügbar
KIA78DL06PI |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 6V TO220
Description: IC REG LINEAR LDO 6V TO220
Produkt ist nicht verfügbar
KIA78DL08PI |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 8V TO220
Description: IC REG LINEAR LDO 8V TO220
Produkt ist nicht verfügbar
KIA78DL09PI |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 9V TO220
Description: IC REG LINEAR LDO 9V TO220
Produkt ist nicht verfügbar
KIA78DL10PI |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 10V TO220
Description: IC REG LINEAR LDO 10V TO220
Produkt ist nicht verfügbar
KIA78DL15PI |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 15V TO220
Description: IC REG LINEAR LDO 15V TO220
Produkt ist nicht verfügbar
7UL1T126FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Description: IC BUFFER NON-INVERT 3.6V USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)7UL1T126FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Description: IC BUFFER NON-INVERT 3.6V USV
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)7UL1T125FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Description: IC BUFFER NON-INVERT 3.6V USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)7UL1T125FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Description: IC BUFFER NON-INVERT 3.6V USV
auf Bestellung 5786 Stücke:
Lieferzeit 10-14 Tag (e)7UL2G126FK,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V US8
Description: IC BUFFER NON-INVERT 3.6V US8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)