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TCR3UF18A,LM(CT TCR3UF18A,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.8V 300MA SMV
auf Bestellung 5830 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLX9291A(GBTPL,F TLX9291A(GBTPL,F Toshiba Semiconductor and Storage TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.31 EUR
5000+2.24 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLX9291A(GBTPL,F TLX9291A(GBTPL,F Toshiba Semiconductor and Storage TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 7142 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.84 EUR
10+3.93 EUR
100+2.94 EUR
500+2.56 EUR
1000+2.44 EUR
Mindestbestellmenge: 4
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SSM3J353F,LF SSM3J353F,LF Toshiba Semiconductor and Storage SSM3J353F_datasheet_en_20161219.pdf?did=35740&prodName=SSM3J353F Description: MOSFET P-CH 30V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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SSM3J372R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59199&prodName=SSM3J372R Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
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SSM3J372R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59199&prodName=SSM3J372R Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 5811 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
33+0.54 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 21
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SSM3J375F,LXHF SSM3J375F,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59201&prodName=SSM3J375F Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
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SSM3J375F,LXHF SSM3J375F,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59201&prodName=SSM3J375F Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 17764 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 25
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TK40S06N1L,LQ TK40S06N1L,LQ Toshiba Semiconductor and Storage docget.jsp?did=30110&prodName=TK40S06N1L Description: MOSFET N-CH 60V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.54 EUR
Mindestbestellmenge: 2000
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2SA1721OTE85LF 2SA1721OTE85LF Toshiba Semiconductor and Storage 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SA1721RTE85LF 2SA1721RTE85LF Toshiba Semiconductor and Storage docget.jsp?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
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2SA1721RTE85LF 2SA1721RTE85LF Toshiba Semiconductor and Storage docget.jsp?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
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2SB1457(T6CANO,F,M 2SB1457(T6CANO,F,M Toshiba Semiconductor and Storage 2SB1457_2009-12-21.pdf Description: TRANS PNP 2A 100V TO226-3
Produkt ist nicht verfügbar
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2SD2695(T6CANO,A,F 2SD2695(T6CANO,A,F Toshiba Semiconductor and Storage 2SD2695_2009-12-21.pdf Description: TRANS NPN 60V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SD2695(T6CANO,F,M 2SD2695(T6CANO,F,M Toshiba Semiconductor and Storage 2SD2695_2009-12-21.pdf Description: TRANS NPN 2A 60V TO226-3
Produkt ist nicht verfügbar
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2SK2962(T6CANO,A,F 2SK2962(T6CANO,A,F Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SK2962(T6CANO,F,M 2SK2962(T6CANO,F,M Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SK2989(T6CANO,A,F 2SK2989(T6CANO,A,F Toshiba Semiconductor and Storage 2SK2989.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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2SK2989(T6CANO,F,M 2SK2989(T6CANO,F,M Toshiba Semiconductor and Storage 2SK2989.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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TLP5752H(D4TP4,E TLP5752H(D4TP4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP5752H(D4TP4,E TLP5752H(D4TP4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1315 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.99 EUR
10+2.13 EUR
100+1.63 EUR
500+1.4 EUR
Mindestbestellmenge: 6
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TLP5752H(TP4,E TLP5752H(TP4,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.29 EUR
Mindestbestellmenge: 1500
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TLP5752H(TP4,E TLP5752H(TP4,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2925 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.99 EUR
10+2.13 EUR
100+1.63 EUR
500+1.4 EUR
Mindestbestellmenge: 6
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TK1R4S04PB,LXHQ TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB Description: MOSFET N-CH 40V 120A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.32 EUR
Mindestbestellmenge: 2000
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TK1R4S04PB,LXHQ TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB Description: MOSFET N-CH 40V 120A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 4738 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.36 EUR
10+2.82 EUR
100+1.93 EUR
500+1.56 EUR
1000+1.44 EUR
Mindestbestellmenge: 5
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RN2701,LF RN2701,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2701 Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Produkt ist nicht verfügbar
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RN2701,LF RN2701,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2701 Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Produkt ist nicht verfügbar
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TD62308APG,J,S TD62308APG,J,S Toshiba Semiconductor and Storage Description: IC DRIVER 4/0 16DIP
Produkt ist nicht verfügbar
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TD62308AFG,S,EL TD62308AFG,S,EL Toshiba Semiconductor and Storage docget.jsp?did=21665&prodName=TD62308APG Description: IC DRIVER 4/0 16HSOP
Produkt ist nicht verfügbar
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TPH2R306NH1,LQ TPH2R306NH1,LQ Toshiba Semiconductor and Storage TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Produkt ist nicht verfügbar
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TPH2R306NH1,LQ TPH2R306NH1,LQ Toshiba Semiconductor and Storage TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 7895 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.17 EUR
10+2.13 EUR
100+1.5 EUR
500+1.2 EUR
1000+1.16 EUR
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2SA1588-GR,LF 2SA1588-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19174&prodName=2SA1588 Description: TRANS PNP 30V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 8950 Stücke:
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50+0.35 EUR
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137+0.13 EUR
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1000+0.083 EUR
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TC78H660FTG,EL TC78H660FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=68604&prodName=TC78H660FTG Description: 2-CH BRUSHED MOTOR DRIVERS AT 20
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 8000 Stücke:
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4000+0.77 EUR
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TC78H660FTG,EL TC78H660FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=68604&prodName=TC78H660FTG Description: 2-CH BRUSHED MOTOR DRIVERS AT 20
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 10167 Stücke:
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10+1.93 EUR
25+1.62 EUR
100+1.27 EUR
250+1.1 EUR
500+0.99 EUR
1000+0.91 EUR
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TLP2200(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP2200(LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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DF2S23P2CTC,L3F DF2S23P2CTC,L3F Toshiba Semiconductor and Storage DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 10000 Stücke:
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10000+0.11 EUR
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DF2S23P2CTC,L3F DF2S23P2CTC,L3F Toshiba Semiconductor and Storage DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 25934 Stücke:
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36+0.49 EUR
53+0.33 EUR
127+0.14 EUR
500+0.13 EUR
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TLP2768A(D4-TP,E TLP2768A(D4-TP,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP2768A(D4,E TLP2768A(D4,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR SO6
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TCR3DF24,LM(CT TCR3DF24,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF24 Description: IC REG LINEAR 2.4V 300MA SMV
auf Bestellung 3000 Stücke:
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TCR3DF24,LM(CT TCR3DF24,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF24 Description: IC REG LINEAR 2.4V 300MA SMV
auf Bestellung 5951 Stücke:
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SSM3K62TU,LF SSM3K62TU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 800MA UFM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
Mindestbestellmenge: 3000
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SSM3K62TU,LF SSM3K62TU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 800MA UFM
auf Bestellung 7416 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
31+0.57 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.22 EUR
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SSM3K341TU,LF SSM3K341TU,LF Toshiba Semiconductor and Storage docget.jsp?did=56017&prodName=SSM3K341TU Description: MOSFET N-CH 60V 6A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 12000 Stücke:
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3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
Mindestbestellmenge: 3000
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SSM3K341TU,LF SSM3K341TU,LF Toshiba Semiconductor and Storage docget.jsp?did=56017&prodName=SSM3K341TU Description: MOSFET N-CH 60V 6A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 13737 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
27+0.66 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
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TK12P60W,RVQ(S TK12P60W,RVQ(S Toshiba Semiconductor and Storage docget.jsp?did=13511&prodName=TK12P60W Description: MOSFET N-CH 600V 11.5A DPAK
Produkt ist nicht verfügbar
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2SC2712-Y,LXHF 2SC2712-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.092 EUR
Mindestbestellmenge: 3000
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2SC2712-Y,LXHF 2SC2712-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 6805 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
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2SC2712-BL,LXHF 2SC2712-BL,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.095 EUR
Mindestbestellmenge: 3000
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2SC2712-BL,LXHF 2SC2712-BL,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3571 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 39
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2SC2712-GR,LXHF 2SC2712-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2712-GR,LXHF 2SC2712-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 1164 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
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2SA1162-GR,LXHF 2SA1162-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+0.093 EUR
9000+0.088 EUR
15000+0.082 EUR
Mindestbestellmenge: 3000
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2SA1162-GR,LXHF 2SA1162-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 18599 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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2SA1162-Y,LXHF 2SA1162-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+0.093 EUR
9000+0.088 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA1162-Y,LXHF 2SA1162-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 15582 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
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2SA1162-O,LXHF 2SA1162-O,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
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2SA1162-O,LXHF 2SA1162-O,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 5840 Stücke:
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36+0.49 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
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TCR3UF19A,LM(CT TCR3UF19A,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.9V 300MA SMV
Produkt ist nicht verfügbar
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TCR3UF18A,LM(CT
TCR3UF18A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA SMV
auf Bestellung 5830 Stücke:
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TLX9291A(GBTPL,F TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A
TLX9291A(GBTPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
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2500+2.31 EUR
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TLX9291A(GBTPL,F TLX9291A_datasheet_en_20190628.pdf?did=53137&prodName=TLX9291A
TLX9291A(GBTPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; SO4; AECQ; ROHS; T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Rise / Fall Time (Typ): 3µs, 5µs
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 7142 Stücke:
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Anzahl Preis
4+5.84 EUR
10+3.93 EUR
100+2.94 EUR
500+2.56 EUR
1000+2.44 EUR
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SSM3J353F,LF SSM3J353F_datasheet_en_20161219.pdf?did=35740&prodName=SSM3J353F
SSM3J353F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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SSM3J372R,LXHF docget.jsp?did=59199&prodName=SSM3J372R
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
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SSM3J372R,LXHF docget.jsp?did=59199&prodName=SSM3J372R
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -30V -6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 5811 Stücke:
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Anzahl Preis
21+0.86 EUR
33+0.54 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.23 EUR
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SSM3J375F,LXHF docget.jsp?did=59201&prodName=SSM3J375F
SSM3J375F,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
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Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
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SSM3J375F,LXHF docget.jsp?did=59201&prodName=SSM3J375F
SSM3J375F,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -20V -2A SOT346
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 17764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 25
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TK40S06N1L,LQ docget.jsp?did=30110&prodName=TK40S06N1L
TK40S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.54 EUR
Mindestbestellmenge: 2000
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2SA1721OTE85LF 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721
2SA1721OTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SA1721RTE85LF docget.jsp?did=19183&prodName=2SA1721
2SA1721RTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
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2SA1721RTE85LF docget.jsp?did=19183&prodName=2SA1721
2SA1721RTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 100MA TO236-3
Produkt ist nicht verfügbar
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2SB1457(T6CANO,F,M 2SB1457_2009-12-21.pdf
2SB1457(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 2A 100V TO226-3
Produkt ist nicht verfügbar
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2SD2695(T6CANO,A,F 2SD2695_2009-12-21.pdf
2SD2695(T6CANO,A,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 60V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SD2695(T6CANO,F,M 2SD2695_2009-12-21.pdf
2SD2695(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 2A 60V TO226-3
Produkt ist nicht verfügbar
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2SK2962(T6CANO,A,F 2SK2962_2009-09-29.pdf
2SK2962(T6CANO,A,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SK2962(T6CANO,F,M 2SK2962_2009-09-29.pdf
2SK2962(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SK2989(T6CANO,A,F 2SK2989.pdf
2SK2989(T6CANO,A,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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2SK2989(T6CANO,F,M 2SK2989.pdf
2SK2989(T6CANO,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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TLP5752H(D4TP4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5752H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP5752H(D4TP4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5752H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+2.13 EUR
100+1.63 EUR
500+1.4 EUR
Mindestbestellmenge: 6
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TLP5752H(TP4,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.29 EUR
Mindestbestellmenge: 1500
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TLP5752H(TP4,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+2.13 EUR
100+1.63 EUR
500+1.4 EUR
Mindestbestellmenge: 6
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TK1R4S04PB,LXHQ TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB
TK1R4S04PB,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.32 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK1R4S04PB,LXHQ TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB
TK1R4S04PB,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 4738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.36 EUR
10+2.82 EUR
100+1.93 EUR
500+1.56 EUR
1000+1.44 EUR
Mindestbestellmenge: 5
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RN2701,LF docget.jsp?did=18900&prodName=RN2701
RN2701,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Produkt ist nicht verfügbar
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RN2701,LF docget.jsp?did=18900&prodName=RN2701
RN2701,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Produkt ist nicht verfügbar
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TD62308APG,J,S
TD62308APG,J,S
Hersteller: Toshiba Semiconductor and Storage
Description: IC DRIVER 4/0 16DIP
Produkt ist nicht verfügbar
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TD62308AFG,S,EL docget.jsp?did=21665&prodName=TD62308APG
TD62308AFG,S,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC DRIVER 4/0 16HSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R306NH1,LQ TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1
TPH2R306NH1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R306NH1,LQ TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1
TPH2R306NH1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 7895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.13 EUR
100+1.5 EUR
500+1.2 EUR
1000+1.16 EUR
Mindestbestellmenge: 6
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2SA1588-GR,LF docget.jsp?did=19174&prodName=2SA1588
2SA1588-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 8950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
85+0.21 EUR
137+0.13 EUR
500+0.094 EUR
1000+0.083 EUR
Mindestbestellmenge: 50
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TC78H660FTG,EL docget.jsp?did=68604&prodName=TC78H660FTG
TC78H660FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2-CH BRUSHED MOTOR DRIVERS AT 20
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.77 EUR
8000+0.74 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
TC78H660FTG,EL docget.jsp?did=68604&prodName=TC78H660FTG
TC78H660FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2-CH BRUSHED MOTOR DRIVERS AT 20
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 10167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
10+1.93 EUR
25+1.62 EUR
100+1.27 EUR
250+1.1 EUR
500+0.99 EUR
1000+0.91 EUR
Mindestbestellmenge: 6
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TLP2200(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2200(LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF2S23P2CTC,L3F DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC
DF2S23P2CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
Mindestbestellmenge: 10000
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DF2S23P2CTC,L3F DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC
DF2S23P2CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 25934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
53+0.33 EUR
127+0.14 EUR
500+0.13 EUR
Mindestbestellmenge: 36
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TLP2768A(D4-TP,E
TLP2768A(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2768A(D4,E
TLP2768A(D4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR SO6
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TCR3DF24,LM(CT docget.jsp?did=14709&prodName=TCR3DF24
TCR3DF24,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.4V 300MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR3DF24,LM(CT docget.jsp?did=14709&prodName=TCR3DF24
TCR3DF24,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.4V 300MA SMV
auf Bestellung 5951 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM3K62TU,LF
SSM3K62TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA UFM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K62TU,LF
SSM3K62TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA UFM
auf Bestellung 7416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
31+0.57 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.22 EUR
Mindestbestellmenge: 25
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SSM3K341TU,LF docget.jsp?did=56017&prodName=SSM3K341TU
SSM3K341TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K341TU,LF docget.jsp?did=56017&prodName=SSM3K341TU
SSM3K341TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 13737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
27+0.66 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
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TK12P60W,RVQ(S docget.jsp?did=13511&prodName=TK12P60W
TK12P60W,RVQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2712-Y,LXHF docget.jsp?did=19227&prodName=2SC2712
2SC2712-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.092 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SC2712-Y,LXHF docget.jsp?did=19227&prodName=2SC2712
2SC2712-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 6805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
2SC2712-BL,LXHF docget.jsp?did=19227&prodName=2SC2712
2SC2712-BL,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.095 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SC2712-BL,LXHF docget.jsp?did=19227&prodName=2SC2712
2SC2712-BL,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3571 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
2SC2712-GR,LXHF docget.jsp?did=19227&prodName=2SC2712
2SC2712-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2712-GR,LXHF docget.jsp?did=19227&prodName=2SC2712
2SC2712-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 1164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
2SA1162-GR,LXHF docget.jsp?did=19351&prodName=2SA1162
2SA1162-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.093 EUR
9000+0.088 EUR
15000+0.082 EUR
Mindestbestellmenge: 3000
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2SA1162-GR,LXHF docget.jsp?did=19351&prodName=2SA1162
2SA1162-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 18599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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2SA1162-Y,LXHF docget.jsp?did=19351&prodName=2SA1162
2SA1162-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.093 EUR
9000+0.088 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA1162-Y,LXHF docget.jsp?did=19351&prodName=2SA1162
2SA1162-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 15582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
2SA1162-O,LXHF docget.jsp?did=19351&prodName=2SA1162
2SA1162-O,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA1162-O,LXHF docget.jsp?did=19351&prodName=2SA1162
2SA1162-O,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 5840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
TCR3UF19A,LM(CT
TCR3UF19A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 300MA SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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