Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (12996) > Seite 44 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
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TPN4R203NC,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 23A 8TSON-ADV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 11.5A, 10V Power Dissipation (Max): 700mW (Ta), 22W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V |
Produkt ist nicht verfügbar |
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TK5P60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 5.4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 270µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V |
auf Bestellung 9825 Stücke: Lieferzeit 21-28 Tag (e) |
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TK8Q60W,S1VQ | Toshiba Semiconductor and Storage | Description: MOSFET N CH 600V 8A IPAK |
Produkt ist nicht verfügbar |
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TK8P60W,RVQ | Toshiba Semiconductor and Storage | Description: MOSFET N CH 600V 8A DPAK |
Produkt ist nicht verfügbar |
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TK12P60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 11.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 600µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
auf Bestellung 1950 Stücke: Lieferzeit 21-28 Tag (e) |
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TK12P60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 11.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 600µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
Produkt ist nicht verfügbar |
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TK12Q60W,S1VQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 11.5A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 600µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
auf Bestellung 61 Stücke: Lieferzeit 21-28 Tag (e) |
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TK16G60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 15.8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 790µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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TK16G60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 15.8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 790µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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TPH2R306NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 60A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V |
auf Bestellung 4854 Stücke: Lieferzeit 21-28 Tag (e) |
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TK16N60W,S1VF | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 15.8A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 790µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
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TK31N60W,S1VF | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 30.8A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
Produkt ist nicht verfügbar |
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TK39N60W,S1VF | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 38.8A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.9mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V |
Produkt ist nicht verfügbar |
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TK62N60W,S1VF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 61.8A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 3.1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V |
auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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TK100L60W,VQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 100A TO3P Packaging: Tube Package / Case: TO-3PL Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Power Dissipation (Max): 797W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 5mA Supplier Device Package: TO-3P(L) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V |
auf Bestellung 432 Stücke: Lieferzeit 21-28 Tag (e) |
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TPH2R306NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 60A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V |
Produkt ist nicht verfügbar |
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TB67H301FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN Packaging: Cut Tape (CT) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: Parallel Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 3V ~ 5.5V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 4.5V ~ 38V Supplier Device Package: 24-WQFN (4x4) Motor Type - AC, DC: Brushed DC Part Status: Active |
auf Bestellung 9309 Stücke: Lieferzeit 21-28 Tag (e) |
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TC78H600FTG,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 24WQFN |
auf Bestellung 4818 Stücke: Lieferzeit 21-28 Tag (e) |
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TC78H600FTG,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 24WQFN |
Produkt ist nicht verfügbar |
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TC94B15WBG(EB,NK2Z | Toshiba Semiconductor and Storage | Description: IC AMP CLASS G STEREO 20WCSP |
Produkt ist nicht verfügbar |
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TC94B06WBG(EB,NKA) | Toshiba Semiconductor and Storage | Description: IC AMP CLASS G STEREO 16WCSP |
Produkt ist nicht verfügbar |
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TC62D902FG(C8,ELHZ | Toshiba Semiconductor and Storage | Description: IC CNTRLR ISOLATED 8SOP |
Produkt ist nicht verfügbar |
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TC78H600FTG,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 24WQFN |
Produkt ist nicht verfügbar |
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TC35420XLG(EL) | Toshiba Semiconductor and Storage | Description: IC TRANSFERJET 4.48GHZ 81XFLGA |
Produkt ist nicht verfügbar |
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TC35420XLG(EL) | Toshiba Semiconductor and Storage | Description: IC TRANSFERJET 4.48GHZ 81XFLGA |
Produkt ist nicht verfügbar |
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JBTC94B12-AS(EB) | Toshiba Semiconductor and Storage | Description: IC AMPLIFIER ECM 6XFBGA |
Produkt ist nicht verfügbar |
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TC62D902FG(C8,ELHZ | Toshiba Semiconductor and Storage | Description: IC CNTRLR ISOLATED 8SOP |
Produkt ist nicht verfügbar |
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TC62D902FG(C8,ELHZ | Toshiba Semiconductor and Storage | Description: IC CNTRLR ISOLATED 8SOP |
Produkt ist nicht verfügbar |
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TB6818FG,EL | Toshiba Semiconductor and Storage |
Description: IC PFC CTRLR CCM 16SOP Packaging: Cut Tape (CT) Package / Case: 16-SOP (0.181", 4.60mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 85°C Voltage - Supply: 8.4V ~ 26V Frequency - Switching: 20kHz ~ 150kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 16-SSOP Current - Startup: 30 µA |
Produkt ist nicht verfügbar |
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TB6819AFG,C,EL | Toshiba Semiconductor and Storage |
Description: IC PFC CTRLR CRM 150KHZ 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 10V ~ 25V Frequency - Switching: 20kHz ~ 150kHz Mode: Critical Conduction (CRM) Supplier Device Package: 8-SOP Current - Startup: 72.5 µA |
Produkt ist nicht verfügbar |
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TC35420XLG(EL) | Toshiba Semiconductor and Storage | Description: IC TRANSFERJET 4.48GHZ 81XFLGA |
Produkt ist nicht verfügbar |
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TB67H301FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN Packaging: Tape & Reel (TR) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: Parallel Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 3V ~ 5.5V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 4.5V ~ 38V Supplier Device Package: 24-WQFN (4x4) Motor Type - AC, DC: Brushed DC Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF6D7M1N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 12VC 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 6-DFN (1.25x1) Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V (Typ) Power Line Protection: No Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF6D7M1N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 12VC 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 6-DFN (1.25x1) Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V (Typ) Power Line Protection: No Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2EE33,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 200MA ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Obsolete PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
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TCR2EE33,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 200MA ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Obsolete PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
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TCR2EE45,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4.5V 200MA ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 4.5V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
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TCR2EE45,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4.5V 200MA ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 4.5V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
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TCK101G,LF | Toshiba Semiconductor and Storage | Description: IC POWER DIST LOAD SWITCH 6WCSP |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF10G7M1N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 12VC 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 10-DFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V (Typ) Power Line Protection: Yes |
Produkt ist nicht verfügbar |
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DF10G7M1N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 12VC 10DFN Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 10-DFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V (Typ) Power Line Protection: Yes |
Produkt ist nicht verfügbar |
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TCK107G,LF | Toshiba Semiconductor and Storage | Description: IC PWR SWITCH P-CHAN 1:1 4WCSP |
Produkt ist nicht verfügbar |
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TCK108G,LF | Toshiba Semiconductor and Storage | Description: IC PWR SWITCH P-CHAN 1:1 4WCSP |
Produkt ist nicht verfügbar |
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TCK106G,LF | Toshiba Semiconductor and Storage | Description: IC POWER DIST LOAD SWITCH 4WCSP |
Produkt ist nicht verfügbar |
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TCK102G,LF | Toshiba Semiconductor and Storage | Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA |
Produkt ist nicht verfügbar |
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TCK107G,LF | Toshiba Semiconductor and Storage | Description: IC PWR SWITCH P-CHAN 1:1 4WCSP |
Produkt ist nicht verfügbar |
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TCK108G,LF | Toshiba Semiconductor and Storage | Description: IC PWR SWITCH P-CHAN 1:1 4WCSP |
Produkt ist nicht verfügbar |
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TCK101G,LF | Toshiba Semiconductor and Storage | Description: IC POWER DIST LOAD SWITCH 6WCSP |
auf Bestellung 2387 Stücke: Lieferzeit 21-28 Tag (e) |
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TCK101G,LF | Toshiba Semiconductor and Storage | Description: IC POWER DIST LOAD SWITCH 6WCSP |
Produkt ist nicht verfügbar |
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TCK106G,LF | Toshiba Semiconductor and Storage | Description: IC POWER DIST LOAD SWITCH 4WCSP |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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TCK106G,LF | Toshiba Semiconductor and Storage | Description: IC POWER DIST LOAD SWITCH 4WCSP |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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TCK102G,LF | Toshiba Semiconductor and Storage | Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA |
Produkt ist nicht verfügbar |
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TCR2EE50,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 200MA ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
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TCR2EE50,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 200MA ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
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TC4066BP-NF | Toshiba Semiconductor and Storage |
Description: IC BILATERAL SW 1 X 1:1 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 1 x 1:1 Type: Bilateral, FET Switches Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Voltage Supply Source: Dual Supply Supplier Device Package: 14-DIP Part Status: Active |
auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2EN18,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 1.8V 0.2A WCSP4 |
auf Bestellung 9615 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2EN12,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 1.2V 0.2A WCSP4 |
auf Bestellung 7968 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2EN15,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 1.5V 0.2A WCSP4 |
auf Bestellung 19321 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2EN25,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 200MA 4SDFN Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.21V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
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TCR2EN28,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 2.8V 0.2A WCSP4 |
auf Bestellung 17541 Stücke: Lieferzeit 21-28 Tag (e) |
TPN4R203NC,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 23A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Description: MOSFET N CH 30V 23A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Produkt ist nicht verfügbar
TK5P60W,RVQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 5.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Description: MOSFET N CH 600V 5.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
auf Bestellung 9825 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.24 EUR |
10+ | 3.53 EUR |
100+ | 2.81 EUR |
500+ | 2.37 EUR |
1000+ | 2.01 EUR |
TK8Q60W,S1VQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 8A IPAK
Description: MOSFET N CH 600V 8A IPAK
Produkt ist nicht verfügbar
TK8P60W,RVQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 8A DPAK
Description: MOSFET N CH 600V 8A DPAK
Produkt ist nicht verfügbar
TK12P60W,RVQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Description: MOSFET N CH 600V 11.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 1950 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.23 EUR |
10+ | 4.35 EUR |
100+ | 3.46 EUR |
500+ | 2.93 EUR |
1000+ | 2.49 EUR |
TK12P60W,RVQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Description: MOSFET N CH 600V 11.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
TK12Q60W,S1VQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Description: MOSFET N CH 600V 11.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 61 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.68 EUR |
TK16G60W,RVQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.24 EUR |
10+ | 12.79 EUR |
100+ | 10.35 EUR |
500+ | 9.2 EUR |
TK16G60W,RVQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 7.88 EUR |
TPH2R306NH,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 4854 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.19 EUR |
10+ | 3.49 EUR |
100+ | 2.78 EUR |
500+ | 2.35 EUR |
1000+ | 1.99 EUR |
2000+ | 1.89 EUR |
TK16N60W,S1VF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: MOSFET N CH 600V 15.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.67 EUR |
30+ | 7.67 EUR |
TK31N60W,S1VF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Description: MOSFET N CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
TK39N60W,S1VF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Produkt ist nicht verfügbar
TK62N60W,S1VF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 43.03 EUR |
10+ | 39.55 EUR |
TK100L60W,VQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 100A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Power Dissipation (Max): 797W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 5mA
Supplier Device Package: TO-3P(L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
Description: MOSFET N-CH 600V 100A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Power Dissipation (Max): 797W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 5mA
Supplier Device Package: TO-3P(L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
auf Bestellung 432 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 80.31 EUR |
10+ | 71.36 EUR |
100+ | 62.42 EUR |
TPH2R306NH,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Produkt ist nicht verfügbar
TB67H301FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 9309 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.26 EUR |
10+ | 3.83 EUR |
25+ | 3.61 EUR |
100+ | 3.08 EUR |
250+ | 2.89 EUR |
500+ | 2.53 EUR |
1000+ | 2.09 EUR |
2500+ | 1.95 EUR |
TC78H600FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
Description: IC MOTOR DRIVER PAR 24WQFN
auf Bestellung 4818 Stücke:
Lieferzeit 21-28 Tag (e)TC78H600FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
Description: IC MOTOR DRIVER PAR 24WQFN
Produkt ist nicht verfügbar
TC94B15WBG(EB,NK2Z |
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMP CLASS G STEREO 20WCSP
Description: IC AMP CLASS G STEREO 20WCSP
Produkt ist nicht verfügbar
TC94B06WBG(EB,NKA) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMP CLASS G STEREO 16WCSP
Description: IC AMP CLASS G STEREO 16WCSP
Produkt ist nicht verfügbar
TC62D902FG(C8,ELHZ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
TC78H600FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
Description: IC MOTOR DRIVER PAR 24WQFN
Produkt ist nicht verfügbar
TC35420XLG(EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
TC35420XLG(EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
JBTC94B12-AS(EB) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMPLIFIER ECM 6XFBGA
Description: IC AMPLIFIER ECM 6XFBGA
Produkt ist nicht verfügbar
TC62D902FG(C8,ELHZ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
TC62D902FG(C8,ELHZ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
TB6818FG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PFC CTRLR CCM 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOP (0.181", 4.60mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 8.4V ~ 26V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 16-SSOP
Current - Startup: 30 µA
Description: IC PFC CTRLR CCM 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOP (0.181", 4.60mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 8.4V ~ 26V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 16-SSOP
Current - Startup: 30 µA
Produkt ist nicht verfügbar
TB6819AFG,C,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PFC CTRLR CRM 150KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10V ~ 25V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOP
Current - Startup: 72.5 µA
Description: IC PFC CTRLR CRM 150KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10V ~ 25V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOP
Current - Startup: 72.5 µA
Produkt ist nicht verfügbar
TC35420XLG(EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
TB67H301FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.88 EUR |
DF6D7M1N,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
DF6D7M1N,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
40+ | 0.66 EUR |
100+ | 0.39 EUR |
500+ | 0.36 EUR |
1000+ | 0.25 EUR |
TCR2EE33,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EE33,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EE45,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EE45,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCK101G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)DF10G7M1N,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
Produkt ist nicht verfügbar
DF10G7M1N,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
Produkt ist nicht verfügbar
TCK107G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Produkt ist nicht verfügbar
TCK108G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Produkt ist nicht verfügbar
TCK106G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 4WCSP
Description: IC POWER DIST LOAD SWITCH 4WCSP
Produkt ist nicht verfügbar
TCK102G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
Produkt ist nicht verfügbar
TCK107G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Produkt ist nicht verfügbar
TCK108G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Produkt ist nicht verfügbar
TCK101G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 2387 Stücke:
Lieferzeit 21-28 Tag (e)TCK101G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
Description: IC POWER DIST LOAD SWITCH 6WCSP
Produkt ist nicht verfügbar
TCK106G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 4WCSP
Description: IC POWER DIST LOAD SWITCH 4WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)TCK106G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 4WCSP
Description: IC POWER DIST LOAD SWITCH 4WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)TCK102G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
Produkt ist nicht verfügbar
TCR2EE50,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EE50,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TC4066BP-NF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BILATERAL SW 1 X 1:1 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-DIP
Part Status: Active
Description: IC BILATERAL SW 1 X 1:1 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-DIP
Part Status: Active
auf Bestellung 150 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.29 EUR |
13+ | 2.05 EUR |
25+ | 1.94 EUR |
100+ | 1.6 EUR |
TCR2EN18,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A WCSP4
Description: IC REG LDO 1.8V 0.2A WCSP4
auf Bestellung 9615 Stücke:
Lieferzeit 21-28 Tag (e)TCR2EN12,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.2V 0.2A WCSP4
Description: IC REG LDO 1.2V 0.2A WCSP4
auf Bestellung 7968 Stücke:
Lieferzeit 21-28 Tag (e)TCR2EN15,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.5V 0.2A WCSP4
Description: IC REG LDO 1.5V 0.2A WCSP4
auf Bestellung 19321 Stücke:
Lieferzeit 21-28 Tag (e)TCR2EN25,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 200MA 4SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2.5V 200MA 4SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EN28,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.8V 0.2A WCSP4
Description: IC REG LDO 2.8V 0.2A WCSP4
auf Bestellung 17541 Stücke:
Lieferzeit 21-28 Tag (e)