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TK16G60W,RVQ TK16G60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13520&prodName=TK16G60W Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TPH2R306NH,L1Q TPH2R306NH,L1Q Toshiba Semiconductor and Storage TPH2R306NH_datasheet_en_20191024.pdf?did=13732&prodName=TPH2R306NH Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 5029 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.85 EUR
10+2.53 EUR
100+1.8 EUR
500+1.45 EUR
1000+1.28 EUR
2000+1.23 EUR
Mindestbestellmenge: 5
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TK16N60W,S1VF TK16N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13611&prodName=TK16N60W Description: MOSFET N CH 600V 15.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 22 Stücke:
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3+8.47 EUR
Mindestbestellmenge: 3
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TK31N60W,S1VF TK31N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13612&prodName=TK31N60W Description: MOSFET N CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
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TK39N60W,S1VF TK39N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13613&prodName=TK39N60W Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 28 Stücke:
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2+10.77 EUR
Mindestbestellmenge: 2
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TK62N60W,S1VF TK62N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13614&prodName=TK62N60W Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 50 Stücke:
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1+29.83 EUR
30+19.16 EUR
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TK100L60W,VQ TK100L60W,VQ Toshiba Semiconductor and Storage docget.jsp?did=13695&prodName=TK100L60W Description: MOSFET N-CH 600V 100A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Power Dissipation (Max): 797W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 5mA
Supplier Device Package: TO-3P(L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
Produkt ist nicht verfügbar
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TPH2R306NH,L1Q TPH2R306NH,L1Q Toshiba Semiconductor and Storage TPH2R306NH_datasheet_en_20191024.pdf?did=13732&prodName=TPH2R306NH Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 5000 Stücke:
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5000+1.21 EUR
Mindestbestellmenge: 5000
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TB67H301FTG,EL TB67H301FTG,EL Toshiba Semiconductor and Storage TB67H301FTG_datasheet_en_20141001.pdf?did=14095&prodName=TB67H301FTG Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 14309 Stücke:
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5+4.17 EUR
10+2.63 EUR
25+2.22 EUR
100+1.76 EUR
250+1.54 EUR
500+1.4 EUR
1000+1.28 EUR
2500+1.16 EUR
Mindestbestellmenge: 5
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TC78H600FTG,EL TC78H600FTG,EL Toshiba Semiconductor and Storage docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet Description: IC MOTOR DRIVER PAR 24WQFN
auf Bestellung 4818 Stücke:
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TC78H600FTG,EL TC78H600FTG,EL Toshiba Semiconductor and Storage docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet Description: IC MOTOR DRIVER PAR 24WQFN
Produkt ist nicht verfügbar
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TC94B15WBG(EB,NK2Z TC94B15WBG(EB,NK2Z Toshiba Semiconductor and Storage TC94B15WBG.pdf Description: IC AMP CLASS G STEREO 20WCSP
Produkt ist nicht verfügbar
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TC94B06WBG(EB,NKA) TC94B06WBG(EB,NKA) Toshiba Semiconductor and Storage TC94B06WBG.pdf Description: IC AMP CLASS G STEREO 16WCSP
Produkt ist nicht verfügbar
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TC62D902FG(C8,ELHZ TC62D902FG(C8,ELHZ Toshiba Semiconductor and Storage docget.jsp?did=14182&prodName=TC62D902FG Description: IC CNTRLR ISOLATED 8SOP
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TC78H600FTG,EL TC78H600FTG,EL Toshiba Semiconductor and Storage docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet Description: IC MOTOR DRIVER PAR 24WQFN
Produkt ist nicht verfügbar
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TC35420XLG(EL) Toshiba Semiconductor and Storage Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
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TC35420XLG(EL) Toshiba Semiconductor and Storage Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
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JBTC94B12-AS(EB) JBTC94B12-AS(EB) Toshiba Semiconductor and Storage Description: IC AMPLIFIER ECM 6XFBGA
Produkt ist nicht verfügbar
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TC62D902FG(C8,ELHZ TC62D902FG(C8,ELHZ Toshiba Semiconductor and Storage docget.jsp?did=14182&prodName=TC62D902FG Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
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TC62D902FG(C8,ELHZ TC62D902FG(C8,ELHZ Toshiba Semiconductor and Storage docget.jsp?did=14182&prodName=TC62D902FG Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
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TB6818FG,EL TB6818FG,EL Toshiba Semiconductor and Storage TB6818FG.pdf Description: IC PFC CTRLR CCM 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOP (0.181", 4.60mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 8.4V ~ 26V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 16-SSOP
Current - Startup: 30 µA
Produkt ist nicht verfügbar
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TB6819AFG,C,EL TB6819AFG,C,EL Toshiba Semiconductor and Storage docget.jsp?did=12875&prodName=TB6819AFG Description: IC PFC CTRLR CRM 150KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10V ~ 25V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOP
Current - Startup: 72.5 µA
Produkt ist nicht verfügbar
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TC35420XLG(EL) Toshiba Semiconductor and Storage Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
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TB67H301FTG,EL TB67H301FTG,EL Toshiba Semiconductor and Storage TB67H301FTG_datasheet_en_20141001.pdf?did=14095&prodName=TB67H301FTG Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.11 EUR
Mindestbestellmenge: 5000
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DF6D7M1N,LF DF6D7M1N,LF Toshiba Semiconductor and Storage DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.15 EUR
Mindestbestellmenge: 3000
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DF6D7M1N,LF DF6D7M1N,LF Toshiba Semiconductor and Storage DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
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32+0.56 EUR
40+0.44 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
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TCR2EE33,LM TCR2EE33,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE33,LM TCR2EE33,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE45,LM TCR2EE45,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE45,LM TCR2EE45,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCK101G,LF TCK101G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK101G Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
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DF10G7M1N,LF DF10G7M1N,LF Toshiba Semiconductor and Storage docget.jsp?did=13718&prodName=DF10G7M1N Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
Produkt ist nicht verfügbar
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DF10G7M1N,LF DF10G7M1N,LF Toshiba Semiconductor and Storage docget.jsp?did=13718&prodName=DF10G7M1N Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
Produkt ist nicht verfügbar
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TCK107G,LF TCK107G,LF Toshiba Semiconductor and Storage docget.jsp?did=13796&prodName=TCK107G Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
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TCK108G,LF TCK108G,LF Toshiba Semiconductor and Storage Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 49mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.79x0.79)
Produkt ist nicht verfügbar
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TCK106G,LF TCK106G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK106G Description: IC POWER DIST LOAD SWITCH 4WCSP
Produkt ist nicht verfügbar
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TCK102G,LF TCK102G,LF Toshiba Semiconductor and Storage TCK101G,102G.pdf Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
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TCK107G,LF TCK107G,LF Toshiba Semiconductor and Storage docget.jsp?did=13796&prodName=TCK107G Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
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TCK108G,LF TCK108G,LF Toshiba Semiconductor and Storage Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 49mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.79x0.79)
Produkt ist nicht verfügbar
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TCK101G,LF TCK101G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK101G Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 2387 Stücke:
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TCK101G,LF TCK101G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK101G Description: IC POWER DIST LOAD SWITCH 6WCSP
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TCK106G,LF TCK106G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK106G Description: IC POWER DIST LOAD SWITCH 4WCSP
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TCK106G,LF TCK106G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK106G Description: IC POWER DIST LOAD SWITCH 4WCSP
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TCK102G,LF TCK102G,LF Toshiba Semiconductor and Storage TCK101G,102G.pdf Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
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TCR2EE50,LM TCR2EE50,LM Toshiba Semiconductor and Storage docget.jsp?did=13794&prodName=TCR2EE50 Description: IC REG LINEAR 5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE50,LM TCR2EE50,LM Toshiba Semiconductor and Storage docget.jsp?did=13794&prodName=TCR2EE50 Description: IC REG LINEAR 5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TC4066BP-NF TC4066BP-NF Toshiba Semiconductor and Storage docget.jsp?did=18812&prodName=TC4066BP Description: IC BILATERAL SWITCH 1X1:1 14-DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-DIP
Part Status: Active
auf Bestellung 1069 Stücke:
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14+1.3 EUR
19+0.93 EUR
25+0.84 EUR
100+0.74 EUR
250+0.69 EUR
500+0.66 EUR
1000+0.64 EUR
Mindestbestellmenge: 14
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TCR2EN18,LF TCR2EN18,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.8V 0.2A WCSP4
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TCR2EN12,LF TCR2EN12,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.2V 0.2A WCSP4
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TCR2EN15,LF TCR2EN15,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.5V 0.2A WCSP4
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TCR2EN28,LF TCR2EN28,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 2.8V 0.2A WCSP4
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TCR2EN30,LF TCR2EN30,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR2EN10 Description: IC REG LDO 3V 0.2A WCSP4
auf Bestellung 5620 Stücke:
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TCR2EN33,LF TCR2EN33,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR2EN10 Description: IC REG LDO 3.3V 0.2A WCSP4
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TCR2EN18,LF TCR2EN18,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.8V 0.2A WCSP4
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TCR2EN12,LF TCR2EN12,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.2V 0.2A WCSP4
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TCR2EN15,LF TCR2EN15,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.5V 0.2A WCSP4
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TCR2EN28,LF TCR2EN28,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 2.8V 0.2A WCSP4
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TCR2EN30,LF TCR2EN30,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR2EN10 Description: IC REG LDO 3V 0.2A WCSP4
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TCR2EN33,LF TCR2EN33,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR2EN10 Description: IC REG LDO 3.3V 0.2A WCSP4
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TCR2EN18,LF TCR2EN18,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.8V 0.2A WCSP4
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TK16G60W,RVQ docget.jsp?did=13520&prodName=TK16G60W
TK16G60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TPH2R306NH,L1Q TPH2R306NH_datasheet_en_20191024.pdf?did=13732&prodName=TPH2R306NH
TPH2R306NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 5029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.53 EUR
100+1.8 EUR
500+1.45 EUR
1000+1.28 EUR
2000+1.23 EUR
Mindestbestellmenge: 5
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TK16N60W,S1VF docget.jsp?did=13611&prodName=TK16N60W
TK16N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.47 EUR
Mindestbestellmenge: 3
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TK31N60W,S1VF docget.jsp?did=13612&prodName=TK31N60W
TK31N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
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TK39N60W,S1VF docget.jsp?did=13613&prodName=TK39N60W
TK39N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 28 Stücke:
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Anzahl Preis
2+10.77 EUR
Mindestbestellmenge: 2
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TK62N60W,S1VF docget.jsp?did=13614&prodName=TK62N60W
TK62N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.83 EUR
30+19.16 EUR
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TK100L60W,VQ docget.jsp?did=13695&prodName=TK100L60W
TK100L60W,VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 100A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Power Dissipation (Max): 797W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 5mA
Supplier Device Package: TO-3P(L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
Produkt ist nicht verfügbar
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TPH2R306NH,L1Q TPH2R306NH_datasheet_en_20191024.pdf?did=13732&prodName=TPH2R306NH
TPH2R306NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.21 EUR
Mindestbestellmenge: 5000
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TB67H301FTG,EL TB67H301FTG_datasheet_en_20141001.pdf?did=14095&prodName=TB67H301FTG
TB67H301FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 14309 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+2.63 EUR
25+2.22 EUR
100+1.76 EUR
250+1.54 EUR
500+1.4 EUR
1000+1.28 EUR
2500+1.16 EUR
Mindestbestellmenge: 5
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TC78H600FTG,EL docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet
TC78H600FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
auf Bestellung 4818 Stücke:
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TC78H600FTG,EL docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet
TC78H600FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
Produkt ist nicht verfügbar
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TC94B15WBG(EB,NK2Z TC94B15WBG.pdf
TC94B15WBG(EB,NK2Z
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMP CLASS G STEREO 20WCSP
Produkt ist nicht verfügbar
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TC94B06WBG(EB,NKA) TC94B06WBG.pdf
TC94B06WBG(EB,NKA)
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMP CLASS G STEREO 16WCSP
Produkt ist nicht verfügbar
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TC62D902FG(C8,ELHZ docget.jsp?did=14182&prodName=TC62D902FG
TC62D902FG(C8,ELHZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
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TC78H600FTG,EL docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet
TC78H600FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
Produkt ist nicht verfügbar
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TC35420XLG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
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TC35420XLG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
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JBTC94B12-AS(EB)
JBTC94B12-AS(EB)
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMPLIFIER ECM 6XFBGA
Produkt ist nicht verfügbar
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TC62D902FG(C8,ELHZ docget.jsp?did=14182&prodName=TC62D902FG
TC62D902FG(C8,ELHZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
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TC62D902FG(C8,ELHZ docget.jsp?did=14182&prodName=TC62D902FG
TC62D902FG(C8,ELHZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
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TB6818FG,EL TB6818FG.pdf
TB6818FG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PFC CTRLR CCM 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOP (0.181", 4.60mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 8.4V ~ 26V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 16-SSOP
Current - Startup: 30 µA
Produkt ist nicht verfügbar
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TB6819AFG,C,EL docget.jsp?did=12875&prodName=TB6819AFG
TB6819AFG,C,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PFC CTRLR CRM 150KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10V ~ 25V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOP
Current - Startup: 72.5 µA
Produkt ist nicht verfügbar
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TC35420XLG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
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TB67H301FTG,EL TB67H301FTG_datasheet_en_20141001.pdf?did=14095&prodName=TB67H301FTG
TB67H301FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.11 EUR
Mindestbestellmenge: 5000
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DF6D7M1N,LF DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N
DF6D7M1N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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DF6D7M1N,LF DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N
DF6D7M1N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
40+0.44 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
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TCR2EE33,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE33,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE33,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE33,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE45,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE45,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE45,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE45,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCK101G,LF docget.jsp?type=datasheet&lang=en&pid=TCK101G
TCK101G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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DF10G7M1N,LF docget.jsp?did=13718&prodName=DF10G7M1N
DF10G7M1N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
Produkt ist nicht verfügbar
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DF10G7M1N,LF docget.jsp?did=13718&prodName=DF10G7M1N
DF10G7M1N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
Produkt ist nicht verfügbar
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TCK107G,LF docget.jsp?did=13796&prodName=TCK107G
TCK107G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Produkt ist nicht verfügbar
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TCK108G,LF
TCK108G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 49mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.79x0.79)
Produkt ist nicht verfügbar
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TCK106G,LF docget.jsp?type=datasheet&lang=en&pid=TCK106G
TCK106G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 4WCSP
Produkt ist nicht verfügbar
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TCK102G,LF TCK101G,102G.pdf
TCK102G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
Produkt ist nicht verfügbar
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TCK107G,LF docget.jsp?did=13796&prodName=TCK107G
TCK107G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Produkt ist nicht verfügbar
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TCK108G,LF
TCK108G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 49mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.79x0.79)
Produkt ist nicht verfügbar
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TCK101G,LF docget.jsp?type=datasheet&lang=en&pid=TCK101G
TCK101G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 2387 Stücke:
Lieferzeit 10-14 Tag (e)
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TCK101G,LF docget.jsp?type=datasheet&lang=en&pid=TCK101G
TCK101G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
Produkt ist nicht verfügbar
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TCK106G,LF docget.jsp?type=datasheet&lang=en&pid=TCK106G
TCK106G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 4WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCK106G,LF docget.jsp?type=datasheet&lang=en&pid=TCK106G
TCK106G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 4WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCK102G,LF TCK101G,102G.pdf
TCK102G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
Produkt ist nicht verfügbar
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TCR2EE50,LM docget.jsp?did=13794&prodName=TCR2EE50
TCR2EE50,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE50,LM docget.jsp?did=13794&prodName=TCR2EE50
TCR2EE50,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TC4066BP-NF docget.jsp?did=18812&prodName=TC4066BP
TC4066BP-NF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BILATERAL SWITCH 1X1:1 14-DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-DIP
Part Status: Active
auf Bestellung 1069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
19+0.93 EUR
25+0.84 EUR
100+0.74 EUR
250+0.69 EUR
500+0.66 EUR
1000+0.64 EUR
Mindestbestellmenge: 14
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TCR2EN18,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN18,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A WCSP4
auf Bestellung 9615 Stücke:
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TCR2EN12,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN12,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.2V 0.2A WCSP4
auf Bestellung 7968 Stücke:
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TCR2EN15,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN15,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.5V 0.2A WCSP4
auf Bestellung 19321 Stücke:
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TCR2EN28,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN28,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.8V 0.2A WCSP4
auf Bestellung 17541 Stücke:
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TCR2EN30,LF docget.jsp?type=datasheet&lang=en&pid=TCR2EN10
TCR2EN30,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 3V 0.2A WCSP4
auf Bestellung 5620 Stücke:
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TCR2EN33,LF docget.jsp?type=datasheet&lang=en&pid=TCR2EN10
TCR2EN33,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 3.3V 0.2A WCSP4
auf Bestellung 7703 Stücke:
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TCR2EN18,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN18,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A WCSP4
auf Bestellung 9615 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR2EN12,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN12,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.2V 0.2A WCSP4
auf Bestellung 7968 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR2EN15,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN15,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.5V 0.2A WCSP4
Produkt ist nicht verfügbar
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TCR2EN28,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN28,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.8V 0.2A WCSP4
auf Bestellung 17541 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR2EN30,LF docget.jsp?type=datasheet&lang=en&pid=TCR2EN10
TCR2EN30,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 3V 0.2A WCSP4
Produkt ist nicht verfügbar
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TCR2EN33,LF docget.jsp?type=datasheet&lang=en&pid=TCR2EN10
TCR2EN33,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 3.3V 0.2A WCSP4
Produkt ist nicht verfügbar
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TCR2EN18,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN18,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A WCSP4
Produkt ist nicht verfügbar
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