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DF2B6.8M1ACT,L3F DF2B6.8M1ACT,L3F Toshiba Semiconductor and Storage DF2B6.8M1ACT_datasheet_en_20180202.pdf?did=13209&prodName=DF2B6.8M1ACT Description: TVS DIODE 5VWM 20VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.12 EUR
30000+ 0.11 EUR
50000+ 0.095 EUR
Mindestbestellmenge: 10000
TC7LX1104WBG(LC,AH TC7LX1104WBG(LC,AH Toshiba Semiconductor and Storage Description: IC TRANSLTR BIDIRECTIONAL 12WCSP
Produkt ist nicht verfügbar
DF2B6.8M2SC(TPL3) DF2B6.8M2SC(TPL3) Toshiba Semiconductor and Storage DF2B6.8M2SC.pdf Description: TVS DIODE 5VWM 13VC SC2
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
TC7LX1108WBG(LC,AH TC7LX1108WBG(LC,AH Toshiba Semiconductor and Storage TC7LX1108WBG_Rev1.0_6-17-11.pdf Description: IC TRANSLTR BIDIRECTIONAL 16QFN
Produkt ist nicht verfügbar
DF2S6.8SC(TPL3) DF2S6.8SC(TPL3) Toshiba Semiconductor and Storage DF2S6.8SC.pdf Description: TVS DIODE 5VWM SC2
Produkt ist nicht verfügbar
TC7USB31FK(TE85L,F TC7USB31FK(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7USB31FK Description: DUAL SPST USB SWITCH US8
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
DF2S6.8UCT(TPL3) DF2S6.8UCT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT Description: TVS DIODE 19VWM 22VC CST2
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
TC7WB126FK(TE85L,F TC7WB126FK(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WB126FK Description: DUAL BUS SWITCH US8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
DSF01S30SC(TPL3) DSF01S30SC(TPL3) Toshiba Semiconductor and Storage DSF01S30SC_Mar01,2014_DS.pdf Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
TC7WBD125AFKT5LF TC7WBD125AFKT5LF Toshiba Semiconductor and Storage docget.jsp?did=2356&prodName=TC7WBD125AFK Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
DSR01S30SC(TPL3) DSR01S30SC(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=359&prodName=DSR01S30SC Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
SSM3J332R,LF SSM3J332R,LF Toshiba Semiconductor and Storage SSM3J332R_datasheet_en_20181015.pdf?did=2620&prodName=SSM3J332R Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 132000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.19 EUR
6000+ 0.18 EUR
9000+ 0.16 EUR
30000+ 0.15 EUR
75000+ 0.13 EUR
Mindestbestellmenge: 3000
SSM3K15ACT(TPL3) SSM3K15ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=5867&prodName=SSM3K15ACT Description: MOSFET N-CH 30V 100MA CST3
Produkt ist nicht verfügbar
SSM3K15AFS,LF SSM3K15AFS,LF Toshiba Semiconductor and Storage SSM3K15AFS_datasheet_en_20140301.pdf?did=5914&prodName=SSM3K15AFS Description: MOSFET N-CH 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.11 EUR
6000+ 0.099 EUR
9000+ 0.082 EUR
30000+ 0.081 EUR
Mindestbestellmenge: 3000
SSM3K329R,LF SSM3K329R,LF Toshiba Semiconductor and Storage SSM3K329R_datasheet_en_20211022.pdf?did=2157&prodName=SSM3K329R Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
SSM3K333R,LF SSM3K333R,LF Toshiba Semiconductor and Storage SSM3K333R_datasheet_en_20211022.pdf?did=6736&prodName=SSM3K333R Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
auf Bestellung 57000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
SSM6J502NU,LF(T SSM6J502NU,LF(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6J502NU Description: MOSFET P CH 20V 6A 2-2AA1A
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6J503NU,LF SSM6J503NU,LF Toshiba Semiconductor and Storage SSM6J503NU_datasheet_en_20140301.pdf?did=6824&prodName=SSM6J503NU Description: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Produkt ist nicht verfügbar
SSM6N15AFU,LF SSM6N15AFU,LF Toshiba Semiconductor and Storage SSM6N15AFU_datasheet_en_20140301.pdf?did=5875&prodName=SSM6N15AFU Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar
1SS393SU,LF 1SS393SU,LF Toshiba Semiconductor and Storage docget.jsp?did=3378&prodName=1SS393 Description: DIODE ARRAY SCHOTTKY 40V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 180 Stücke:
Lieferzeit 21-28 Tag (e)
27+0.99 EUR
38+ 0.69 EUR
100+ 0.35 EUR
Mindestbestellmenge: 27
CES388,L3F CES388,L3F Toshiba Semiconductor and Storage docget.jsp?did=13102&prodName=CES388 Description: DIODE SCHOTTKY 40V 100MA ESC
auf Bestellung 14091 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J332R,LF SSM3J332R,LF Toshiba Semiconductor and Storage SSM3J332R_datasheet_en_20181015.pdf?did=2620&prodName=SSM3J332R Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 136809 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 25
SSM6P47NU,LF(T SSM6P47NU,LF(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6P47NU Description: MOSFET 2P-CH 20V 4A 2-2Y1A
auf Bestellung 5649 Stücke:
Lieferzeit 21-28 Tag (e)
TC7LX1104WBG(LC,AH TC7LX1104WBG(LC,AH Toshiba Semiconductor and Storage Description: IC TRANSLTR BIDIRECTIONAL 12WCSP
Produkt ist nicht verfügbar
SSM3K333R,LF SSM3K333R,LF Toshiba Semiconductor and Storage SSM3K333R_datasheet_en_20211022.pdf?did=6736&prodName=SSM3K333R Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
auf Bestellung 58589 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
36+ 0.74 EUR
100+ 0.37 EUR
500+ 0.33 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
TC7LX1108WBG(LC,AH TC7LX1108WBG(LC,AH Toshiba Semiconductor and Storage TC7LX1108WBG_Rev1.0_6-17-11.pdf Description: IC TRANSLTR BIDIRECTIONAL 16QFN
Produkt ist nicht verfügbar
DF2B6.8M2SC(TPL3) DF2B6.8M2SC(TPL3) Toshiba Semiconductor and Storage DF2B6.8M2SC.pdf Description: TVS DIODE 5VWM 13VC SC2
auf Bestellung 10051 Stücke:
Lieferzeit 21-28 Tag (e)
DF2S6.8SC(TPL3) DF2S6.8SC(TPL3) Toshiba Semiconductor and Storage DF2S6.8SC.pdf Description: TVS DIODE 5VWM SC2
Produkt ist nicht verfügbar
TC7USB31FK(TE85L,F TC7USB31FK(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7USB31FK Description: DUAL SPST USB SWITCH US8
auf Bestellung 8674 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6J502NU,LF(T SSM6J502NU,LF(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6J502NU Description: MOSFET P CH 20V 6A 2-2AA1A
auf Bestellung 5968 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6J503NU,LF SSM6J503NU,LF Toshiba Semiconductor and Storage SSM6J503NU_datasheet_en_20140301.pdf?did=6824&prodName=SSM6J503NU Description: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 2710 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
27+ 0.98 EUR
100+ 0.66 EUR
500+ 0.5 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 22
DF2S6.8UCT(TPL3) DF2S6.8UCT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT Description: TVS DIODE 19VWM 22VC CST2
auf Bestellung 16428 Stücke:
Lieferzeit 21-28 Tag (e)
TC7WB126FK(TE85L,F TC7WB126FK(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WB126FK Description: DUAL BUS SWITCH US8
auf Bestellung 3501 Stücke:
Lieferzeit 21-28 Tag (e)
DF2S6.8UCT(TPL3) DF2S6.8UCT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT Description: TVS DIODE 19VWM 22VC CST2
auf Bestellung 16428 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6N15AFU,LF SSM6N15AFU,LF Toshiba Semiconductor and Storage SSM6N15AFU_datasheet_en_20140301.pdf?did=5875&prodName=SSM6N15AFU Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 1024 Stücke:
Lieferzeit 21-28 Tag (e)
33+0.81 EUR
47+ 0.56 EUR
100+ 0.28 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 33
TC7WBD125AFKT5LF TC7WBD125AFKT5LF Toshiba Semiconductor and Storage docget.jsp?did=2356&prodName=TC7WBD125AFK Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
DSF01S30SC(TPL3) DSF01S30SC(TPL3) Toshiba Semiconductor and Storage DSF01S30SC_Mar01,2014_DS.pdf Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
DSR01S30SC(TPL3) DSR01S30SC(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=359&prodName=DSR01S30SC Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
SSM6N37FE,LM(T SSM6N37FE,LM(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N37FE Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Produkt ist nicht verfügbar
SSM6N37FE,LM(T SSM6N37FE,LM(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N37FE Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Produkt ist nicht verfügbar
SSM6N48FU,RF SSM6N48FU,RF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N48FU Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Produkt ist nicht verfügbar
SSM6N48FU,RF SSM6N48FU,RF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N48FU Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Produkt ist nicht verfügbar
CES520,L3F CES520,L3F Toshiba Semiconductor and Storage Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 14805 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
Mindestbestellmenge: 63
SSM3K15ACT(TPL3) SSM3K15ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=5867&prodName=SSM3K15ACT Description: MOSFET N-CH 30V 100MA CST3
Produkt ist nicht verfügbar
SSM6P47NU,LF(T SSM6P47NU,LF(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6P47NU Description: MOSFET 2P-CH 20V 4A 2-2Y1A
auf Bestellung 5649 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3K15AFS,LF SSM3K15AFS,LF Toshiba Semiconductor and Storage SSM3K15AFS_datasheet_en_20140301.pdf?did=5914&prodName=SSM3K15AFS Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 46965 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 40
CES521,L3F CES521,L3F Toshiba Semiconductor and Storage CES521_datasheet_en_20140414.pdf?did=7054&prodName=CES521 Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 58615 Stücke:
Lieferzeit 21-28 Tag (e)
56+0.47 EUR
62+ 0.42 EUR
114+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.096 EUR
2000+ 0.082 EUR
Mindestbestellmenge: 56
SSM6P49NU,LF SSM6P49NU,LF Toshiba Semiconductor and Storage SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 5520 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
30+ 0.89 EUR
100+ 0.62 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 25
CUS551V30,H3F CUS551V30,H3F Toshiba Semiconductor and Storage docget.jsp?did=10394&prodName=CUS551V30 Description: DIODE SCHOTTKY 30V 500MA USC
auf Bestellung 2154 Stücke:
Lieferzeit 21-28 Tag (e)
TC75S63TU,LF TC75S63TU,LF Toshiba Semiconductor and Storage TC75S63TU_datasheet_en_20140301.pdf?did=13393&prodName=TC75S63TU Description: IC CMOS 1 CIRCUIT UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 500µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 4659 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
29+ 0.91 EUR
32+ 0.83 EUR
100+ 0.62 EUR
250+ 0.56 EUR
500+ 0.47 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 24
SSM3K329R,LF SSM3K329R,LF Toshiba Semiconductor and Storage SSM3K329R_datasheet_en_20211022.pdf?did=2157&prodName=SSM3K329R Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 36382 Stücke:
Lieferzeit 21-28 Tag (e)
27+0.99 EUR
38+ 0.7 EUR
100+ 0.35 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 27
DF2B6.8M2SC(TPL3) DF2B6.8M2SC(TPL3) Toshiba Semiconductor and Storage DF2B6.8M2SC.pdf Description: TVS DIODE 5VWM 13VC SC2
auf Bestellung 10051 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6J502NU,LF(T SSM6J502NU,LF(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6J502NU Description: MOSFET P CH 20V 6A 2-2AA1A
auf Bestellung 5968 Stücke:
Lieferzeit 21-28 Tag (e)
TC7USB31FK(TE85L,F TC7USB31FK(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7USB31FK Description: DUAL SPST USB SWITCH US8
auf Bestellung 8674 Stücke:
Lieferzeit 21-28 Tag (e)
DF2S6.8SC(TPL3) DF2S6.8SC(TPL3) Toshiba Semiconductor and Storage DF2S6.8SC.pdf Description: TVS DIODE 5VWM SC2
Produkt ist nicht verfügbar
TC7WB126FK(TE85L,F TC7WB126FK(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WB126FK Description: DUAL BUS SWITCH US8
auf Bestellung 3501 Stücke:
Lieferzeit 21-28 Tag (e)
TC58DVG02D5TA00 TC58DVG02D5TA00 Toshiba Semiconductor and Storage NAND_Flash_Memory(SLC_Middle_Capacity)_Web.pdf Description: IC FLASH 1GBIT 25NS 48TSOP
Produkt ist nicht verfügbar
TH58NVG4S0FTA20 TH58NVG4S0FTA20 Toshiba Semiconductor and Storage docget.jsp?did=15002&prodName=TH58NVG4S0FTA20 Description: IC EEPROM 16GBIT 25NS 48TSOP
auf Bestellung 128 Stücke:
Lieferzeit 21-28 Tag (e)
TK30E06N1,S1X TK30E06N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13210&prodName=TK30E06N1 Description: MOSFET N-CH 60V 43A TO220
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
TK40E06N1,S1X TK40E06N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13463&prodName=TK40E06N1 Description: MOSFET N-CH 60V 40A TO220
Produkt ist nicht verfügbar
DF2B6.8M1ACT,L3F DF2B6.8M1ACT_datasheet_en_20180202.pdf?did=13209&prodName=DF2B6.8M1ACT
DF2B6.8M1ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.12 EUR
30000+ 0.11 EUR
50000+ 0.095 EUR
Mindestbestellmenge: 10000
TC7LX1104WBG(LC,AH
TC7LX1104WBG(LC,AH
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLTR BIDIRECTIONAL 12WCSP
Produkt ist nicht verfügbar
DF2B6.8M2SC(TPL3) DF2B6.8M2SC.pdf
DF2B6.8M2SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 13VC SC2
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
TC7LX1108WBG(LC,AH TC7LX1108WBG_Rev1.0_6-17-11.pdf
TC7LX1108WBG(LC,AH
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLTR BIDIRECTIONAL 16QFN
Produkt ist nicht verfügbar
DF2S6.8SC(TPL3) DF2S6.8SC.pdf
DF2S6.8SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SC2
Produkt ist nicht verfügbar
TC7USB31FK(TE85L,F docget.jsp?type=datasheet&lang=en&pid=TC7USB31FK
TC7USB31FK(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: DUAL SPST USB SWITCH US8
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
DF2S6.8UCT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT
DF2S6.8UCT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC CST2
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
TC7WB126FK(TE85L,F docget.jsp?type=datasheet&lang=en&pid=TC7WB126FK
TC7WB126FK(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: DUAL BUS SWITCH US8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
DSF01S30SC(TPL3) DSF01S30SC_Mar01,2014_DS.pdf
DSF01S30SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
TC7WBD125AFKT5LF docget.jsp?did=2356&prodName=TC7WBD125AFK
TC7WBD125AFKT5LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
DSR01S30SC(TPL3) docget.jsp?did=359&prodName=DSR01S30SC
DSR01S30SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
SSM3J332R,LF SSM3J332R_datasheet_en_20181015.pdf?did=2620&prodName=SSM3J332R
SSM3J332R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 132000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
6000+ 0.18 EUR
9000+ 0.16 EUR
30000+ 0.15 EUR
75000+ 0.13 EUR
Mindestbestellmenge: 3000
SSM3K15ACT(TPL3) docget.jsp?did=5867&prodName=SSM3K15ACT
SSM3K15ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Produkt ist nicht verfügbar
SSM3K15AFS,LF SSM3K15AFS_datasheet_en_20140301.pdf?did=5914&prodName=SSM3K15AFS
SSM3K15AFS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.099 EUR
9000+ 0.082 EUR
30000+ 0.081 EUR
Mindestbestellmenge: 3000
SSM3K329R,LF SSM3K329R_datasheet_en_20211022.pdf?did=2157&prodName=SSM3K329R
SSM3K329R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
SSM3K333R,LF SSM3K333R_datasheet_en_20211022.pdf?did=6736&prodName=SSM3K333R
SSM3K333R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
auf Bestellung 57000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
SSM6J502NU,LF(T docget.jsp?type=datasheet&lang=en&pid=SSM6J502NU
SSM6J502NU,LF(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 6A 2-2AA1A
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6J503NU,LF SSM6J503NU_datasheet_en_20140301.pdf?did=6824&prodName=SSM6J503NU
SSM6J503NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Produkt ist nicht verfügbar
SSM6N15AFU,LF SSM6N15AFU_datasheet_en_20140301.pdf?did=5875&prodName=SSM6N15AFU
SSM6N15AFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar
1SS393SU,LF docget.jsp?did=3378&prodName=1SS393
1SS393SU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 40V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 180 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
38+ 0.69 EUR
100+ 0.35 EUR
Mindestbestellmenge: 27
CES388,L3F docget.jsp?did=13102&prodName=CES388
CES388,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
auf Bestellung 14091 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J332R,LF SSM3J332R_datasheet_en_20181015.pdf?did=2620&prodName=SSM3J332R
SSM3J332R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 136809 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 25
SSM6P47NU,LF(T docget.jsp?type=datasheet&lang=en&pid=SSM6P47NU
SSM6P47NU,LF(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
auf Bestellung 5649 Stücke:
Lieferzeit 21-28 Tag (e)
TC7LX1104WBG(LC,AH
TC7LX1104WBG(LC,AH
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLTR BIDIRECTIONAL 12WCSP
Produkt ist nicht verfügbar
SSM3K333R,LF SSM3K333R_datasheet_en_20211022.pdf?did=6736&prodName=SSM3K333R
SSM3K333R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
auf Bestellung 58589 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
36+ 0.74 EUR
100+ 0.37 EUR
500+ 0.33 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
TC7LX1108WBG(LC,AH TC7LX1108WBG_Rev1.0_6-17-11.pdf
TC7LX1108WBG(LC,AH
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLTR BIDIRECTIONAL 16QFN
Produkt ist nicht verfügbar
DF2B6.8M2SC(TPL3) DF2B6.8M2SC.pdf
DF2B6.8M2SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 13VC SC2
auf Bestellung 10051 Stücke:
Lieferzeit 21-28 Tag (e)
DF2S6.8SC(TPL3) DF2S6.8SC.pdf
DF2S6.8SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SC2
Produkt ist nicht verfügbar
TC7USB31FK(TE85L,F docget.jsp?type=datasheet&lang=en&pid=TC7USB31FK
TC7USB31FK(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: DUAL SPST USB SWITCH US8
auf Bestellung 8674 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6J502NU,LF(T docget.jsp?type=datasheet&lang=en&pid=SSM6J502NU
SSM6J502NU,LF(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 6A 2-2AA1A
auf Bestellung 5968 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6J503NU,LF SSM6J503NU_datasheet_en_20140301.pdf?did=6824&prodName=SSM6J503NU
SSM6J503NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 2710 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
27+ 0.98 EUR
100+ 0.66 EUR
500+ 0.5 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 22
DF2S6.8UCT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT
DF2S6.8UCT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC CST2
auf Bestellung 16428 Stücke:
Lieferzeit 21-28 Tag (e)
TC7WB126FK(TE85L,F docget.jsp?type=datasheet&lang=en&pid=TC7WB126FK
TC7WB126FK(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: DUAL BUS SWITCH US8
auf Bestellung 3501 Stücke:
Lieferzeit 21-28 Tag (e)
DF2S6.8UCT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT
DF2S6.8UCT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC CST2
auf Bestellung 16428 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6N15AFU,LF SSM6N15AFU_datasheet_en_20140301.pdf?did=5875&prodName=SSM6N15AFU
SSM6N15AFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 1024 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
33+0.81 EUR
47+ 0.56 EUR
100+ 0.28 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 33
TC7WBD125AFKT5LF docget.jsp?did=2356&prodName=TC7WBD125AFK
TC7WBD125AFKT5LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
DSF01S30SC(TPL3) DSF01S30SC_Mar01,2014_DS.pdf
DSF01S30SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
DSR01S30SC(TPL3) docget.jsp?did=359&prodName=DSR01S30SC
DSR01S30SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
SSM6N37FE,LM(T docget.jsp?type=datasheet&lang=en&pid=SSM6N37FE
SSM6N37FE,LM(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Produkt ist nicht verfügbar
SSM6N37FE,LM(T docget.jsp?type=datasheet&lang=en&pid=SSM6N37FE
SSM6N37FE,LM(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Produkt ist nicht verfügbar
SSM6N48FU,RF docget.jsp?type=datasheet&lang=en&pid=SSM6N48FU
SSM6N48FU,RF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Produkt ist nicht verfügbar
SSM6N48FU,RF docget.jsp?type=datasheet&lang=en&pid=SSM6N48FU
SSM6N48FU,RF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Produkt ist nicht verfügbar
CES520,L3F
CES520,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 14805 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
Mindestbestellmenge: 63
SSM3K15ACT(TPL3) docget.jsp?did=5867&prodName=SSM3K15ACT
SSM3K15ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Produkt ist nicht verfügbar
SSM6P47NU,LF(T docget.jsp?type=datasheet&lang=en&pid=SSM6P47NU
SSM6P47NU,LF(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
auf Bestellung 5649 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3K15AFS,LF SSM3K15AFS_datasheet_en_20140301.pdf?did=5914&prodName=SSM3K15AFS
SSM3K15AFS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 46965 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 40
CES521,L3F CES521_datasheet_en_20140414.pdf?did=7054&prodName=CES521
CES521,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 58615 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.47 EUR
62+ 0.42 EUR
114+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.096 EUR
2000+ 0.082 EUR
Mindestbestellmenge: 56
SSM6P49NU,LF SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU
SSM6P49NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 5520 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
30+ 0.89 EUR
100+ 0.62 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 25
CUS551V30,H3F docget.jsp?did=10394&prodName=CUS551V30
CUS551V30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC
auf Bestellung 2154 Stücke:
Lieferzeit 21-28 Tag (e)
TC75S63TU,LF TC75S63TU_datasheet_en_20140301.pdf?did=13393&prodName=TC75S63TU
TC75S63TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 500µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 4659 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
29+ 0.91 EUR
32+ 0.83 EUR
100+ 0.62 EUR
250+ 0.56 EUR
500+ 0.47 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 24
SSM3K329R,LF SSM3K329R_datasheet_en_20211022.pdf?did=2157&prodName=SSM3K329R
SSM3K329R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 36382 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
38+ 0.7 EUR
100+ 0.35 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 27
DF2B6.8M2SC(TPL3) DF2B6.8M2SC.pdf
DF2B6.8M2SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 13VC SC2
auf Bestellung 10051 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6J502NU,LF(T docget.jsp?type=datasheet&lang=en&pid=SSM6J502NU
SSM6J502NU,LF(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 6A 2-2AA1A
auf Bestellung 5968 Stücke:
Lieferzeit 21-28 Tag (e)
TC7USB31FK(TE85L,F docget.jsp?type=datasheet&lang=en&pid=TC7USB31FK
TC7USB31FK(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: DUAL SPST USB SWITCH US8
auf Bestellung 8674 Stücke:
Lieferzeit 21-28 Tag (e)
DF2S6.8SC(TPL3) DF2S6.8SC.pdf
DF2S6.8SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SC2
Produkt ist nicht verfügbar
TC7WB126FK(TE85L,F docget.jsp?type=datasheet&lang=en&pid=TC7WB126FK
TC7WB126FK(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: DUAL BUS SWITCH US8
auf Bestellung 3501 Stücke:
Lieferzeit 21-28 Tag (e)
TC58DVG02D5TA00 NAND_Flash_Memory(SLC_Middle_Capacity)_Web.pdf
TC58DVG02D5TA00
Hersteller: Toshiba Semiconductor and Storage
Description: IC FLASH 1GBIT 25NS 48TSOP
Produkt ist nicht verfügbar
TH58NVG4S0FTA20 docget.jsp?did=15002&prodName=TH58NVG4S0FTA20
TH58NVG4S0FTA20
Hersteller: Toshiba Semiconductor and Storage
Description: IC EEPROM 16GBIT 25NS 48TSOP
auf Bestellung 128 Stücke:
Lieferzeit 21-28 Tag (e)
TK30E06N1,S1X docget.jsp?did=13210&prodName=TK30E06N1
TK30E06N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 43A TO220
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
TK40E06N1,S1X docget.jsp?did=13463&prodName=TK40E06N1
TK40E06N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A TO220
Produkt ist nicht verfügbar
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