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DSF01S30SC(TPL3) DSF01S30SC(TPL3) Toshiba Semiconductor and Storage DSF01S30SC_Mar01,2014_DS.pdf Description: DIODE SCHOTTKY 30V 100MA SC2
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DSR01S30SC(TPL3) DSR01S30SC(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=359&prodName=DSR01S30SC Description: DIODE SCHOTTKY 30V 100MA SC2
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SSM6N37FE,LM(T SSM6N37FE,LM(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N37FE Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
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SSM6N37FE,LM(T SSM6N37FE,LM(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N37FE Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
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SSM6N48FU,RF SSM6N48FU,RF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N48FU Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
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SSM6N48FU,RF SSM6N48FU,RF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N48FU Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
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CES520,L3F CES520,L3F Toshiba Semiconductor and Storage docget.jsp?did=7074&prodName=CES520 Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 36572 Stücke:
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130+0.14 EUR
226+0.08 EUR
500+0.06 EUR
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SSM3K15ACT(TPL3) SSM3K15ACT(TPL3) Toshiba Semiconductor and Storage SSM3K15ACT_datasheet_en_20140301.pdf?did=5867&prodName=SSM3K15ACT Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
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SSM6P47NU,LF(T SSM6P47NU,LF(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6P47NU Description: MOSFET 2P-CH 20V 4A 2-2Y1A
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SSM3K15AFS,LF SSM3K15AFS,LF Toshiba Semiconductor and Storage docget.jsp?did=5914&prodName=SSM3K15AFS Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 21289 Stücke:
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CES521,L3F CES521,L3F Toshiba Semiconductor and Storage CES521_datasheet_en_20140414.pdf?did=7054&prodName=CES521 Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
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SSM6P49NU,LF SSM6P49NU,LF Toshiba Semiconductor and Storage SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
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CUS551V30,H3F CUS551V30,H3F Toshiba Semiconductor and Storage docget.jsp?did=10394&prodName=CUS551V30 Description: DIODE SCHOTTKY 30V 500MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
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TC75S63TU,LF TC75S63TU,LF Toshiba Semiconductor and Storage TC75S63TU_datasheet_en_20140301.pdf?did=13393&prodName=TC75S63TU Description: IC CMOS 1 CIRCUIT UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 500µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
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SSM3K329R,LF SSM3K329R,LF Toshiba Semiconductor and Storage SSM3K329R_datasheet_en_20211022.pdf?did=2157&prodName=SSM3K329R Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
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DF2B6.8M2SC(TPL3) DF2B6.8M2SC(TPL3) Toshiba Semiconductor and Storage DF2B6.8M2SC.pdf Description: TVS DIODE 5VWM 13VC SC2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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SSM6J502NU,LF(T SSM6J502NU,LF(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6J502NU Description: MOSFET P CH 20V 6A 2-2AA1A
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TC7USB31FK(TE85L,F TC7USB31FK(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7USB31FK Description: DUAL SPST USB SWITCH US8
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DF2S6.8SC(TPL3) DF2S6.8SC(TPL3) Toshiba Semiconductor and Storage DF2S6.8SC.pdf Description: TVS DIODE 5VWM SC2
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TC7WB126FK(TE85L,F TC7WB126FK(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WB126FK Description: DUAL BUS SWITCH US8
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TC58DVG02D5TA00 TC58DVG02D5TA00 Toshiba Semiconductor and Storage NAND_Flash_Memory(SLC_Middle_Capacity)_Web.pdf Description: IC FLASH 1GBIT 25NS 48TSOP
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TH58NVG4S0FTA20 TH58NVG4S0FTA20 Toshiba Semiconductor and Storage docget.jsp?did=15002&prodName=TH58NVG4S0FTA20 Description: IC EEPROM 16GBIT 25NS 48TSOP
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TK30E06N1,S1X TK30E06N1,S1X Toshiba Semiconductor and Storage TK30E06N1_datasheet_en_20140630.pdf?did=13210&prodName=TK30E06N1 Description: MOSFET N-CH 60V 43A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
auf Bestellung 59 Stücke:
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TK40E06N1,S1X TK40E06N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13463&prodName=TK40E06N1 Description: MOSFET N-CH 60V 40A TO220
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TK58E06N1,S1X TK58E06N1,S1X Toshiba Semiconductor and Storage TK58E06N1_datasheet_en_20140630.pdf?did=13212&prodName=TK58E06N1 Description: MOSFET N-CH 60V 58A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
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TK100E06N1,S1X TK100E06N1,S1X Toshiba Semiconductor and Storage TK100E06N1_datasheet_en_20140630.pdf?did=13459&prodName=TK100E06N1 Description: MOSFET N CH 60V 100A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
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4+5.33 EUR
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TK46E08N1,S1X TK46E08N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13151&prodName=TK46E08N1 Description: MOSFET N-CH 80V 80A TO220
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TK72E08N1,S1X TK72E08N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13153&prodName=TK72E08N1 Description: MOSFET N-CH 80V 72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 36A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 40 V
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TK34E10N1,S1X TK34E10N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=12872&prodName=TK34E10N1 Description: MOSFET N-CH 100V 75A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
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TPH14006NH,L1Q TPH14006NH,L1Q Toshiba Semiconductor and Storage TPH14006NH_datasheet_en_20140107.pdf?did=13356&prodName=TPH14006NH Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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TPH7R506NH,L1Q TPH7R506NH,L1Q Toshiba Semiconductor and Storage TPH7R506NH_datasheet_en_20140107.pdf?did=13359&prodName=TPH7R506NH Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
auf Bestellung 20000 Stücke:
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5000+0.87 EUR
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TPH5R906NH,L1Q TPH5R906NH,L1Q Toshiba Semiconductor and Storage TPH5R906NH_datasheet_en_20140107.pdf?did=13358&prodName=TPH5R906NH Description: MOSFET N-CH 60V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
auf Bestellung 20000 Stücke:
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5000+1.17 EUR
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TPH4R606NH,L1Q TPH4R606NH,L1Q Toshiba Semiconductor and Storage TPH4R606NH_datasheet_en_20140107.pdf?did=13357&prodName=TPH4R606NH Description: MOSFET N-CH 60V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
Produkt ist nicht verfügbar
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TK10A60W,S4X TK10A60W,S4X Toshiba Semiconductor and Storage TK10A60W_datasheet_en_20131225.pdf?did=13486&prodName=TK10A60W Description: MOSFET N-CH 600V 9.7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
Produkt ist nicht verfügbar
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TK16A60W,S4X TK16A60W,S4X Toshiba Semiconductor and Storage TK16A60W_datasheet_en_20131225.pdf?did=13490&prodName=TK16A60W Description: MOSFET N-CH 600V 15.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TPH14006NH,L1Q TPH14006NH,L1Q Toshiba Semiconductor and Storage TPH14006NH_datasheet_en_20140107.pdf?did=13356&prodName=TPH14006NH Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 4380 Stücke:
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7+2.73 EUR
11+1.73 EUR
100+1.16 EUR
500+0.91 EUR
1000+0.80 EUR
2000+0.77 EUR
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TPH7R506NH,L1Q TPH7R506NH,L1Q Toshiba Semiconductor and Storage TPH7R506NH_datasheet_en_20140107.pdf?did=13359&prodName=TPH7R506NH Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
auf Bestellung 26067 Stücke:
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6+3.20 EUR
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500+1.10 EUR
1000+1.01 EUR
2000+0.93 EUR
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TPH5R906NH,L1Q TPH5R906NH,L1Q Toshiba Semiconductor and Storage TPH5R906NH_datasheet_en_20140107.pdf?did=13358&prodName=TPH5R906NH Description: MOSFET N-CH 60V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
auf Bestellung 24969 Stücke:
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5+4.01 EUR
10+2.58 EUR
100+1.76 EUR
500+1.41 EUR
1000+1.30 EUR
2000+1.21 EUR
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TPH4R606NH,L1Q TPH4R606NH,L1Q Toshiba Semiconductor and Storage TPH4R606NH_datasheet_en_20140107.pdf?did=13357&prodName=TPH4R606NH Description: MOSFET N-CH 60V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
auf Bestellung 4623 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.63 EUR
10+2.99 EUR
100+2.06 EUR
500+1.66 EUR
1000+1.54 EUR
2000+1.43 EUR
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SSM3K15AMFV,L3F SSM3K15AMFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=2565&prodName=SSM3K15AMFV Description: MOSFET N-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
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SSM3K15AMFV,L3F SSM3K15AMFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=2565&prodName=SSM3K15AMFV Description: MOSFET N-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Produkt ist nicht verfügbar
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TB62218AFNG,C8,EL TB62218AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=13037&prodName=TB62218AFNG Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Produkt ist nicht verfügbar
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TB6643KQ,8 TB6643KQ,8 Toshiba Semiconductor and Storage docget.jsp?did=12679&prodName=TB6643KQ Description: IC MOTOR DRIVER 10V-45V 7HSIP
Packaging: Tube
Package / Case: 7-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 7-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.37 EUR
10+4.82 EUR
25+4.44 EUR
Mindestbestellmenge: 3
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TB6674PG TB6674PG Toshiba Semiconductor and Storage TB6674F_P_Rev_07_2010_ds.pdf Description: IC MOTOR DRIVER PAR 16DIP
auf Bestellung 12 Stücke:
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TB62208FG,8,EL TB62208FG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=7125&prodName=TB62208FG Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
Produkt ist nicht verfügbar
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TB62218AFTG,8,EL TB62218AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=13039&prodName=TB62218AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2000 Stücke:
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TB62208FNG,C8,EL TB62208FNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62208FNG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 1000 Stücke:
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TB62208FTG,8,EL TB62208FTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62208FTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2000 Stücke:
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TB62212FNG,C8,EL TB62212FNG,C8,EL Toshiba Semiconductor and Storage TB62212FNG.pdf Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB6552FTG,8,EL TB6552FTG,8,EL Toshiba Semiconductor and Storage Description: IC MOTOR DRIVER 2.7V-5.5V 16WQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: PWM, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 13.5V
Supplier Device Package: 16-WQFN (3x3)
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
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TB62212FTAG,C8,EL TB62212FTAG,C8,EL Toshiba Semiconductor and Storage TB62212FTAG_datasheet_en_20141001.pdf?did=6255&prodName=TB62212FTAG Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 6000 Stücke:
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2000+2.11 EUR
6000+2.03 EUR
Mindestbestellmenge: 2000
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TB62213AFG,8,EL TB62213AFG,8,EL Toshiba Semiconductor and Storage TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB6560AFTG,8,EL TB6560AFTG,8,EL Toshiba Semiconductor and Storage Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Part Status: Active
Produkt ist nicht verfügbar
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TB62213AFNG,C8,EL TB62213AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=22889&prodName=TB62213AFNG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 2000 Stücke:
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TB6561NG,8 TB6561NG,8 Toshiba Semiconductor and Storage TB6561NG_datasheet_en_20100825.pdf?did=5911&prodName=TB6561NG Description: IC MOTOR DRIVER 10V-36V 24SDIP
Packaging: Tray
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 10V ~ 36V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 36V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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TB62213AFTG,8,EL TB62213AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=22890&prodName=TB62213AFTG Description: IC MOTOR DRIVER PAR 48QFN
Produkt ist nicht verfügbar
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TB6568KQ,8 TB6568KQ,8 Toshiba Semiconductor and Storage TB6568KQ_datasheet_en_20170414.pdf?did=1282&prodName=TB6568KQ Description: IC MOTOR DRIVER 10V-45V 7HSIP
Packaging: Tray
Package / Case: 7-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 7-HSIP
Motor Type - AC, DC: Brushed DC
auf Bestellung 426 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+4.61 EUR
25+4.36 EUR
100+3.78 EUR
250+3.58 EUR
Mindestbestellmenge: 4
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TB62214AFG,8,EL TB62214AFG,8,EL Toshiba Semiconductor and Storage TB62214AFG_Summary.pdf Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB6569FG,8,EL TB6569FG,8,EL Toshiba Semiconductor and Storage datasheet_en_20230920.pdf?did=154281 Description: IC MOTOR DRIVER 10V-45V 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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TB62214AFNG,C8,EL TB62214AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=13036&prodName=TB62214AFNG Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.47 EUR
2000+2.30 EUR
Mindestbestellmenge: 1000
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DSF01S30SC(TPL3) DSF01S30SC_Mar01,2014_DS.pdf
DSF01S30SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
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DSR01S30SC(TPL3) docget.jsp?did=359&prodName=DSR01S30SC
DSR01S30SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
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SSM6N37FE,LM(T docget.jsp?type=datasheet&lang=en&pid=SSM6N37FE
SSM6N37FE,LM(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Produkt ist nicht verfügbar
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SSM6N37FE,LM(T docget.jsp?type=datasheet&lang=en&pid=SSM6N37FE
SSM6N37FE,LM(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Produkt ist nicht verfügbar
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SSM6N48FU,RF docget.jsp?type=datasheet&lang=en&pid=SSM6N48FU
SSM6N48FU,RF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Produkt ist nicht verfügbar
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SSM6N48FU,RF docget.jsp?type=datasheet&lang=en&pid=SSM6N48FU
SSM6N48FU,RF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Produkt ist nicht verfügbar
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CES520,L3F docget.jsp?did=7074&prodName=CES520
CES520,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 36572 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
130+0.14 EUR
226+0.08 EUR
500+0.06 EUR
1000+0.05 EUR
2000+0.05 EUR
Mindestbestellmenge: 77
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SSM3K15ACT(TPL3) SSM3K15ACT_datasheet_en_20140301.pdf?did=5867&prodName=SSM3K15ACT
SSM3K15ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM6P47NU,LF(T docget.jsp?type=datasheet&lang=en&pid=SSM6P47NU
SSM6P47NU,LF(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
auf Bestellung 5649 Stücke:
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SSM3K15AFS,LF docget.jsp?did=5914&prodName=SSM3K15AFS
SSM3K15AFS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 21289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
81+0.22 EUR
131+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
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CES521,L3F CES521_datasheet_en_20140414.pdf?did=7054&prodName=CES521
CES521,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 58615 Stücke:
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56+0.32 EUR
62+0.29 EUR
114+0.16 EUR
500+0.10 EUR
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2000+0.06 EUR
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SSM6P49NU,LF SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU
SSM6P49NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 10462 Stücke:
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Anzahl Preis
16+1.13 EUR
26+0.70 EUR
100+0.45 EUR
500+0.34 EUR
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CUS551V30,H3F docget.jsp?did=10394&prodName=CUS551V30
CUS551V30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
auf Bestellung 50866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
90+0.20 EUR
162+0.11 EUR
500+0.09 EUR
1000+0.09 EUR
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TC75S63TU,LF TC75S63TU_datasheet_en_20140301.pdf?did=13393&prodName=TC75S63TU
TC75S63TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 500µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 4659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
29+0.62 EUR
32+0.56 EUR
100+0.42 EUR
250+0.38 EUR
500+0.32 EUR
1000+0.24 EUR
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SSM3K329R,LF SSM3K329R_datasheet_en_20211022.pdf?did=2157&prodName=SSM3K329R
SSM3K329R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Produkt ist nicht verfügbar
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DF2B6.8M2SC(TPL3) DF2B6.8M2SC.pdf
DF2B6.8M2SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 13VC SC2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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SSM6J502NU,LF(T docget.jsp?type=datasheet&lang=en&pid=SSM6J502NU
SSM6J502NU,LF(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 6A 2-2AA1A
auf Bestellung 5968 Stücke:
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TC7USB31FK(TE85L,F docget.jsp?type=datasheet&lang=en&pid=TC7USB31FK
TC7USB31FK(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: DUAL SPST USB SWITCH US8
auf Bestellung 8674 Stücke:
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DF2S6.8SC(TPL3) DF2S6.8SC.pdf
DF2S6.8SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SC2
Produkt ist nicht verfügbar
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TC7WB126FK(TE85L,F docget.jsp?type=datasheet&lang=en&pid=TC7WB126FK
TC7WB126FK(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: DUAL BUS SWITCH US8
auf Bestellung 3501 Stücke:
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TC58DVG02D5TA00 NAND_Flash_Memory(SLC_Middle_Capacity)_Web.pdf
TC58DVG02D5TA00
Hersteller: Toshiba Semiconductor and Storage
Description: IC FLASH 1GBIT 25NS 48TSOP
Produkt ist nicht verfügbar
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TH58NVG4S0FTA20 docget.jsp?did=15002&prodName=TH58NVG4S0FTA20
TH58NVG4S0FTA20
Hersteller: Toshiba Semiconductor and Storage
Description: IC EEPROM 16GBIT 25NS 48TSOP
auf Bestellung 128 Stücke:
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TK30E06N1,S1X TK30E06N1_datasheet_en_20140630.pdf?did=13210&prodName=TK30E06N1
TK30E06N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 43A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
auf Bestellung 59 Stücke:
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Anzahl Preis
8+2.25 EUR
50+1.34 EUR
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TK40E06N1,S1X docget.jsp?did=13463&prodName=TK40E06N1
TK40E06N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A TO220
Produkt ist nicht verfügbar
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TK58E06N1,S1X TK58E06N1_datasheet_en_20140630.pdf?did=13212&prodName=TK58E06N1
TK58E06N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 58A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
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TK100E06N1,S1X TK100E06N1_datasheet_en_20140630.pdf?did=13459&prodName=TK100E06N1
TK100E06N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 100A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.33 EUR
10+3.48 EUR
Mindestbestellmenge: 4
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TK46E08N1,S1X docget.jsp?did=13151&prodName=TK46E08N1
TK46E08N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 80A TO220
Produkt ist nicht verfügbar
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TK72E08N1,S1X docget.jsp?did=13153&prodName=TK72E08N1
TK72E08N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 36A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 40 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.12 EUR
10+3.71 EUR
Mindestbestellmenge: 5
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TK34E10N1,S1X docget.jsp?did=12872&prodName=TK34E10N1
TK34E10N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 75A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
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TPH14006NH,L1Q TPH14006NH_datasheet_en_20140107.pdf?did=13356&prodName=TPH14006NH
TPH14006NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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TPH7R506NH,L1Q TPH7R506NH_datasheet_en_20140107.pdf?did=13359&prodName=TPH7R506NH
TPH7R506NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.87 EUR
Mindestbestellmenge: 5000
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TPH5R906NH,L1Q TPH5R906NH_datasheet_en_20140107.pdf?did=13358&prodName=TPH5R906NH
TPH5R906NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.17 EUR
Mindestbestellmenge: 5000
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TPH4R606NH,L1Q TPH4R606NH_datasheet_en_20140107.pdf?did=13357&prodName=TPH4R606NH
TPH4R606NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
Produkt ist nicht verfügbar
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TK10A60W,S4X TK10A60W_datasheet_en_20131225.pdf?did=13486&prodName=TK10A60W
TK10A60W,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
Produkt ist nicht verfügbar
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TK16A60W,S4X TK16A60W_datasheet_en_20131225.pdf?did=13490&prodName=TK16A60W
TK16A60W,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TPH14006NH,L1Q TPH14006NH_datasheet_en_20140107.pdf?did=13356&prodName=TPH14006NH
TPH14006NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 4380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
11+1.73 EUR
100+1.16 EUR
500+0.91 EUR
1000+0.80 EUR
2000+0.77 EUR
Mindestbestellmenge: 7
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TPH7R506NH,L1Q TPH7R506NH_datasheet_en_20140107.pdf?did=13359&prodName=TPH7R506NH
TPH7R506NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
auf Bestellung 26067 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.20 EUR
10+2.04 EUR
100+1.38 EUR
500+1.10 EUR
1000+1.01 EUR
2000+0.93 EUR
Mindestbestellmenge: 6
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TPH5R906NH,L1Q TPH5R906NH_datasheet_en_20140107.pdf?did=13358&prodName=TPH5R906NH
TPH5R906NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
auf Bestellung 24969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+2.58 EUR
100+1.76 EUR
500+1.41 EUR
1000+1.30 EUR
2000+1.21 EUR
Mindestbestellmenge: 5
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TPH4R606NH,L1Q TPH4R606NH_datasheet_en_20140107.pdf?did=13357&prodName=TPH4R606NH
TPH4R606NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
auf Bestellung 4623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+2.99 EUR
100+2.06 EUR
500+1.66 EUR
1000+1.54 EUR
2000+1.43 EUR
Mindestbestellmenge: 4
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SSM3K15AMFV,L3F docget.jsp?did=2565&prodName=SSM3K15AMFV
SSM3K15AMFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 48
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SSM3K15AMFV,L3F docget.jsp?did=2565&prodName=SSM3K15AMFV
SSM3K15AMFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB62218AFNG,C8,EL docget.jsp?did=13037&prodName=TB62218AFNG
TB62218AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Produkt ist nicht verfügbar
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TB6643KQ,8 docget.jsp?did=12679&prodName=TB6643KQ
TB6643KQ,8
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 7HSIP
Packaging: Tube
Package / Case: 7-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 7-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
10+4.82 EUR
25+4.44 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TB6674PG TB6674F_P_Rev_07_2010_ds.pdf
TB6674PG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 16DIP
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62208FG,8,EL docget.jsp?did=7125&prodName=TB62208FG
TB62208FG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB62218AFTG,8,EL docget.jsp?did=13039&prodName=TB62218AFTG
TB62218AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62208FNG,C8,EL docget.jsp?type=datasheet&lang=en&pid=TB62208FNG
TB62208FNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62208FTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62208FTG
TB62208FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62212FNG,C8,EL TB62212FNG.pdf
TB62212FNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Produkt ist nicht verfügbar
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TB6552FTG,8,EL
TB6552FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 2.7V-5.5V 16WQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: PWM, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 13.5V
Supplier Device Package: 16-WQFN (3x3)
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
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TB62212FTAG,C8,EL TB62212FTAG_datasheet_en_20141001.pdf?did=6255&prodName=TB62212FTAG
TB62212FTAG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.11 EUR
6000+2.03 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TB62213AFG,8,EL TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG
TB62213AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB6560AFTG,8,EL
TB6560AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Part Status: Active
Produkt ist nicht verfügbar
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TB62213AFNG,C8,EL docget.jsp?did=22889&prodName=TB62213AFNG
TB62213AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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TB6561NG,8 TB6561NG_datasheet_en_20100825.pdf?did=5911&prodName=TB6561NG
TB6561NG,8
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-36V 24SDIP
Packaging: Tray
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 10V ~ 36V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 36V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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TB62213AFTG,8,EL docget.jsp?did=22890&prodName=TB62213AFTG
TB62213AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Produkt ist nicht verfügbar
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TB6568KQ,8 TB6568KQ_datasheet_en_20170414.pdf?did=1282&prodName=TB6568KQ
TB6568KQ,8
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 7HSIP
Packaging: Tray
Package / Case: 7-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 7-HSIP
Motor Type - AC, DC: Brushed DC
auf Bestellung 426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+4.61 EUR
25+4.36 EUR
100+3.78 EUR
250+3.58 EUR
Mindestbestellmenge: 4
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TB62214AFG,8,EL TB62214AFG_Summary.pdf
TB62214AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB6569FG,8,EL datasheet_en_20230920.pdf?did=154281
TB6569FG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB62214AFNG,C8,EL docget.jsp?did=13036&prodName=TB62214AFNG
TB62214AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.47 EUR
2000+2.30 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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