Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13011) > Seite 39 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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1SS352(TH3,F,D) | Toshiba Semiconductor and Storage | Description: DIODE SWITCHING 80V 0.1A USC |
auf Bestellung 61303 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS387,L3F | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 110257 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS389,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 100MA ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 25pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA Current - Reverse Leakage @ Vr: 5 µA @ 10 V |
Produkt ist nicht verfügbar |
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1SS389(TL3,F,D) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 10V 0.1A ESC |
auf Bestellung 37125 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS405,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 50MA ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Current - Average Rectified (Io): 50mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
auf Bestellung 43794 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS416,L3M | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 100MA SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 15pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-923 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
auf Bestellung 30685 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1162S-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
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2SA1586SU-GR,LF | Toshiba Semiconductor and Storage | Description: TRANS PNP 50V 0.15A USM |
auf Bestellung 2334 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1586SU-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
Produkt ist nicht verfügbar |
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2SC2712-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 37167 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC2712S-Y,LF | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN 50V 150MA S-MINI |
Produkt ist nicht verfügbar |
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2SC4116-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 21201 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC4116SU-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
Produkt ist nicht verfügbar |
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DF2B6.8FS(TPL4,D) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM 8.5VC FSC |
Produkt ist nicht verfügbar |
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DF2S6.8FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 9VC SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power Line Protection: No |
auf Bestellung 589398 Stücke: Lieferzeit 21-28 Tag (e) |
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DF3A6.8LSU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1302SU,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W USM |
auf Bestellung 10784 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1401,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SMINI |
auf Bestellung 17696 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1404S,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SMINI |
Produkt ist nicht verfügbar |
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RN1405S,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
auf Bestellung 1594 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1406,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 7642 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2402S,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 50V 0.1A SMINI |
Produkt ist nicht verfügbar |
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SSM3K17SU,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 50V 100MA USM |
Produkt ist nicht verfügbar |
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SSM3K36FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 500MA SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V |
auf Bestellung 30238 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3K7002BS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA S-MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: S-Mini Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V |
Produkt ist nicht verfügbar |
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SSM6J501NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 10A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
auf Bestellung 107827 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM6N7002BFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.2A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.1V @ 250µA Supplier Device Package: US6 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TC7SB3157CFU,LF | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX SGL 1:2 US6 |
auf Bestellung 2412 Stücke: Lieferzeit 21-28 Tag (e) |
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TC7WPB9306FC(TE85L | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH 2 X 1:1 CST8 |
auf Bestellung 48 Stücke: Lieferzeit 21-28 Tag (e) |
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TC7WPB9307FC(TE85L | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH SPST DUAL CST8 |
auf Bestellung 9904 Stücke: Lieferzeit 21-28 Tag (e) |
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TC7WPB9307FK(T5L,F | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH SPST DUAL US8 |
Produkt ist nicht verfügbar |
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TC7MB3125CFK-EL(M) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH LOCAP QUAD 14VSSOP |
Produkt ist nicht verfügbar |
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TC7MB3125CFT-EL(M) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH LOCAP QUAD 14TSSOP |
auf Bestellung 3974 Stücke: Lieferzeit 21-28 Tag (e) |
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TC7MBL3257CFK-EL | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX QUAD 1:2 16VSSOP |
auf Bestellung 3574 Stücke: Lieferzeit 21-28 Tag (e) |
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TC7USB221FT(EL,M) | Toshiba Semiconductor and Storage | Description: IC USB SWITCH SPDT DUAL 14-TSSOP |
auf Bestellung 5558 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS352(TH3,F,D) | Toshiba Semiconductor and Storage | Description: DIODE SWITCHING 80V 0.1A USC |
auf Bestellung 61303 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS389(TL3,F,D) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 10V 0.1A ESC |
auf Bestellung 37125 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1586SU-GR,LF | Toshiba Semiconductor and Storage | Description: TRANS PNP 50V 0.15A USM |
Produkt ist nicht verfügbar |
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2SC2712S-Y,LF | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN 50V 150MA S-MINI |
Produkt ist nicht verfügbar |
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DF2B6.8FS(TPL4,D) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM 8.5VC FSC |
Produkt ist nicht verfügbar |
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DF3A6.8LSU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1302SU,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W USM |
auf Bestellung 10784 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1405S,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
auf Bestellung 1594 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2402S,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 50V 0.1A SMINI |
Produkt ist nicht verfügbar |
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TC7SB3157CFU,LF | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX SGL 1:2 US6 |
auf Bestellung 2412 Stücke: Lieferzeit 21-28 Tag (e) |
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TC7WPB9307FC(TE85L | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH SPST DUAL CST8 |
auf Bestellung 9904 Stücke: Lieferzeit 21-28 Tag (e) |
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TK100E08N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 100A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V |
auf Bestellung 23 Stücke: Lieferzeit 21-28 Tag (e) |
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TK22E10N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 52A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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TK40E10N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 90A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 126W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) |
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TK65E10N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 148A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 148A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V |
auf Bestellung 1065 Stücke: Lieferzeit 21-28 Tag (e) |
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TK100E10N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 100A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V |
auf Bestellung 4360 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS393SU,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTTKY 40V USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
Produkt ist nicht verfügbar |
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SSM6N37FE,LM(T | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 20V 0.25A 2-2N1D |
Produkt ist nicht verfügbar |
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CES388,L3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 100MA ESC |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM6N48FU,RF | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 30V 0.1A 2-2J1C |
Produkt ist nicht verfügbar |
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CES520,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 17pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM6P47NU,LF(T | Toshiba Semiconductor and Storage | Description: MOSFET 2P-CH 20V 4A 2-2Y1A |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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CES521,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 26pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 30 V |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM6P49NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 6-UDFN (2x2) |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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CUS551V30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 500MA USC |
Produkt ist nicht verfügbar |
1SS352(TH3,F,D) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SWITCHING 80V 0.1A USC
Description: DIODE SWITCHING 80V 0.1A USC
auf Bestellung 61303 Stücke:
Lieferzeit 21-28 Tag (e)1SS387,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 110257 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.55 EUR |
70+ | 0.37 EUR |
144+ | 0.18 EUR |
500+ | 0.15 EUR |
1000+ | 0.11 EUR |
2000+ | 0.091 EUR |
1SS389,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Description: DIODE SCHOTTKY 40V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Produkt ist nicht verfügbar
1SS389(TL3,F,D) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 0.1A ESC
Description: DIODE SCHOTTKY 10V 0.1A ESC
auf Bestellung 37125 Stücke:
Lieferzeit 21-28 Tag (e)1SS405,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 43794 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.65 EUR |
60+ | 0.44 EUR |
122+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
2000+ | 0.11 EUR |
1SS416,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 30685 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.65 EUR |
60+ | 0.44 EUR |
122+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
2000+ | 0.11 EUR |
5000+ | 0.099 EUR |
2SA1162S-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SA1586SU-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Description: TRANS PNP 50V 0.15A USM
auf Bestellung 2334 Stücke:
Lieferzeit 21-28 Tag (e)2SA1586SU-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
2SC2712-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 37167 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.47 EUR |
79+ | 0.33 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.093 EUR |
2SC2712S-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN 50V 150MA S-MINI
Description: TRANSISTOR NPN 50V 150MA S-MINI
Produkt ist nicht verfügbar
2SC4116-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 21201 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.42 EUR |
87+ | 0.3 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.087 EUR |
2SC4116SU-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
DF2B6.8FS(TPL4,D) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
Description: TVS DIODE 5VWM 8.5VC FSC
Produkt ist nicht verfügbar
DF2S6.8FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
auf Bestellung 589398 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.42 EUR |
87+ | 0.3 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.087 EUR |
2000+ | 0.072 EUR |
5000+ | 0.068 EUR |
DF3A6.8LSU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE
Description: TVS DIODE
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)RN1302SU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 10784 Stücke:
Lieferzeit 21-28 Tag (e)RN1401,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
auf Bestellung 17696 Stücke:
Lieferzeit 21-28 Tag (e)RN1404S,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN1405S,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 1594 Stücke:
Lieferzeit 21-28 Tag (e)RN1406,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 7642 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.49 EUR |
75+ | 0.35 EUR |
153+ | 0.17 EUR |
500+ | 0.14 EUR |
1000+ | 0.099 EUR |
RN2402S,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Produkt ist nicht verfügbar
SSM3K17SU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 100MA USM
Description: MOSFET N-CH 50V 100MA USM
Produkt ist nicht verfügbar
SSM3K36FS,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Description: MOSFET N-CH 20V 500MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
auf Bestellung 30238 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.68 EUR |
58+ | 0.45 EUR |
118+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.13 EUR |
SSM3K7002BS,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Description: MOSFET N-CH 60V 200MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Produkt ist nicht verfügbar
SSM6J501NU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
auf Bestellung 107827 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.12 EUR |
30+ | 0.87 EUR |
100+ | 0.52 EUR |
500+ | 0.48 EUR |
1000+ | 0.33 EUR |
SSM6N7002BFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Produkt ist nicht verfügbar
TC7SB3157CFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX SGL 1:2 US6
Description: IC MUX/DEMUX SGL 1:2 US6
auf Bestellung 2412 Stücke:
Lieferzeit 21-28 Tag (e)TC7WPB9306FC(TE85L |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 CST8
Description: IC BUS SWITCH 2 X 1:1 CST8
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.33 EUR |
26+ | 1.01 EUR |
28+ | 0.93 EUR |
TC7WPB9307FC(TE85L |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
Description: IC BUS SWITCH SPST DUAL CST8
auf Bestellung 9904 Stücke:
Lieferzeit 21-28 Tag (e)TC7WPB9307FK(T5L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL US8
Description: IC BUS SWITCH SPST DUAL US8
Produkt ist nicht verfügbar
TC7MB3125CFK-EL(M) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14VSSOP
Description: IC BUS SWITCH LOCAP QUAD 14VSSOP
Produkt ist nicht verfügbar
TC7MB3125CFT-EL(M) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
auf Bestellung 3974 Stücke:
Lieferzeit 21-28 Tag (e)TC7MBL3257CFK-EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
auf Bestellung 3574 Stücke:
Lieferzeit 21-28 Tag (e)TC7USB221FT(EL,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 14-TSSOP
Description: IC USB SWITCH SPDT DUAL 14-TSSOP
auf Bestellung 5558 Stücke:
Lieferzeit 21-28 Tag (e)1SS352(TH3,F,D) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SWITCHING 80V 0.1A USC
Description: DIODE SWITCHING 80V 0.1A USC
auf Bestellung 61303 Stücke:
Lieferzeit 21-28 Tag (e)1SS389(TL3,F,D) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 0.1A ESC
Description: DIODE SCHOTTKY 10V 0.1A ESC
auf Bestellung 37125 Stücke:
Lieferzeit 21-28 Tag (e)2SA1586SU-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Description: TRANS PNP 50V 0.15A USM
Produkt ist nicht verfügbar
2SC2712S-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN 50V 150MA S-MINI
Description: TRANSISTOR NPN 50V 150MA S-MINI
Produkt ist nicht verfügbar
DF2B6.8FS(TPL4,D) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
Description: TVS DIODE 5VWM 8.5VC FSC
Produkt ist nicht verfügbar
DF3A6.8LSU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE
Description: TVS DIODE
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)RN1302SU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 10784 Stücke:
Lieferzeit 21-28 Tag (e)RN1405S,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 1594 Stücke:
Lieferzeit 21-28 Tag (e)RN2402S,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Produkt ist nicht verfügbar
TC7SB3157CFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX SGL 1:2 US6
Description: IC MUX/DEMUX SGL 1:2 US6
auf Bestellung 2412 Stücke:
Lieferzeit 21-28 Tag (e)TC7WPB9307FC(TE85L |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
Description: IC BUS SWITCH SPST DUAL CST8
auf Bestellung 9904 Stücke:
Lieferzeit 21-28 Tag (e)TK100E08N1,S1X |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
auf Bestellung 23 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.2 EUR |
TK22E10N1,S1X |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 52A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Description: MOSFET N CH 100V 52A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)TK40E10N1,S1X |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: MOSFET N CH 100V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 40 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.58 EUR |
TK65E10N1,S1X |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 148A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 148A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Description: MOSFET N CH 100V 148A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 148A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 1065 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.92 EUR |
10+ | 5.75 EUR |
100+ | 4.58 EUR |
500+ | 3.87 EUR |
1000+ | 3.28 EUR |
TK100E10N1,S1X |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Description: MOSFET N-CH 100V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
auf Bestellung 4360 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.2 EUR |
50+ | 7.28 EUR |
100+ | 6.24 EUR |
500+ | 5.55 EUR |
1000+ | 4.75 EUR |
2000+ | 4.47 EUR |
1SS393SU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 40V USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Produkt ist nicht verfügbar
SSM6N37FE,LM(T |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Produkt ist nicht verfügbar
CES388,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
Description: DIODE SCHOTTKY 40V 100MA ESC
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)SSM6N48FU,RF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Produkt ist nicht verfügbar
CES520,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.068 EUR |
SSM6P47NU,LF(T |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)CES521,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.074 EUR |
16000+ | 0.064 EUR |
24000+ | 0.058 EUR |
SSM6P49NU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.35 EUR |
CUS551V30,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC
Description: DIODE SCHOTTKY 30V 500MA USC
Produkt ist nicht verfügbar