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1SS387,L3F 1SS387,L3F Toshiba Semiconductor and Storage 1SS387.pdf Description: DIODE STANDARD 80V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 92048 Stücke:
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72+0.25 EUR
118+0.15 EUR
180+0.098 EUR
500+0.079 EUR
1000+0.072 EUR
2000+0.066 EUR
Mindestbestellmenge: 72
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1SS389(TL3,F,D) 1SS389(TL3,F,D) Toshiba Semiconductor and Storage 1SS389_en_datasheet_071101.pdf Description: DIODE SCHOTTKY 10V 0.1A ESC
auf Bestellung 37125 Stücke:
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1SS405,H3F 1SS405,H3F Toshiba Semiconductor and Storage docget.jsp?did=22692&prodName=1SS405 Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 30717 Stücke:
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72+0.25 EUR
117+0.15 EUR
147+0.12 EUR
500+0.078 EUR
1000+0.071 EUR
2000+0.07 EUR
Mindestbestellmenge: 72
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1SS416,L3M 1SS416,L3M Toshiba Semiconductor and Storage docget.jsp?did=344&prodName=1SS416 Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 31162 Stücke:
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59+0.3 EUR
95+0.19 EUR
135+0.13 EUR
500+0.096 EUR
1000+0.075 EUR
2000+0.071 EUR
5000+0.064 EUR
Mindestbestellmenge: 59
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2SA1162S-Y,LF 2SA1162S-Y,LF Toshiba Semiconductor and Storage 2SA1162_datasheet_en_20211006.pdf?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SA1586SU-GR,LF 2SA1586SU-GR,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SA1586 Description: TRANS PNP 50V 0.15A USM
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2SA1586SU-Y,LF 2SA1586SU-Y,LF Toshiba Semiconductor and Storage 2SA1586_datasheet_en_20210706.pdf?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC2712-GR,LF 2SC2712-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 24151 Stücke:
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67+0.26 EUR
104+0.17 EUR
168+0.11 EUR
500+0.077 EUR
1000+0.067 EUR
Mindestbestellmenge: 67
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2SC2712S-Y,LF 2SC2712S-Y,LF Toshiba Semiconductor and Storage 6473.pdf Description: TRANSISTOR NPN 50V 150MA S-MINI
Produkt ist nicht verfügbar
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2SC4116-GR,LF 2SC4116-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 15584 Stücke:
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72+0.25 EUR
122+0.14 EUR
197+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
Mindestbestellmenge: 72
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2SC4116SU-Y,LF 2SC4116SU-Y,LF Toshiba Semiconductor and Storage 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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DF2B6.8FS(TPL4,D) DF2B6.8FS(TPL4,D) Toshiba Semiconductor and Storage DF2B6.8FS.pdf Description: TVS DIODE 5VWM 8.5VC FSC
Produkt ist nicht verfügbar
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DF2S6.8FS,L3M DF2S6.8FS,L3M Toshiba Semiconductor and Storage docget.jsp?did=22219&prodName=DF2S6.8FS Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
auf Bestellung 462549 Stücke:
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112+0.16 EUR
159+0.11 EUR
433+0.041 EUR
500+0.037 EUR
1000+0.034 EUR
2000+0.033 EUR
5000+0.032 EUR
Mindestbestellmenge: 112
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DF3A6.8LSU,LF DF3A6.8LSU,LF Toshiba Semiconductor and Storage Description: TVS DIODE
auf Bestellung 6000 Stücke:
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RN1302SU,LF RN1302SU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1302 Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 10784 Stücke:
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RN1401,LF RN1401,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 23630 Stücke:
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63+0.28 EUR
100+0.18 EUR
160+0.11 EUR
500+0.081 EUR
1000+0.071 EUR
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RN1404S,LF RN1404S,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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RN1405S,LF RN1405S,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1401 Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 1594 Stücke:
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RN1406,LF RN1406,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6742 Stücke:
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56+0.32 EUR
92+0.19 EUR
149+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
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RN2402S,LF RN2402S,LF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2401 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Produkt ist nicht verfügbar
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SSM3K17SU,LF SSM3K17SU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 50V 100MA USM
Produkt ist nicht verfügbar
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SSM3K36FS,LF SSM3K36FS,LF Toshiba Semiconductor and Storage docget.jsp?did=11220&prodName=SSM3K36FS Description: MOSFET N-CH 20V 500MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
auf Bestellung 5705 Stücke:
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56+0.32 EUR
85+0.21 EUR
208+0.085 EUR
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SSM3K7002BS,LF SSM3K7002BS,LF Toshiba Semiconductor and Storage SSM3K7002BS.pdf Description: MOSFET N-CH 60V 200MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Produkt ist nicht verfügbar
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SSM6J501NU,LF SSM6J501NU,LF Toshiba Semiconductor and Storage docget.jsp?did=6841&prodName=SSM6J501NU Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
auf Bestellung 3891 Stücke:
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23+0.77 EUR
37+0.48 EUR
100+0.34 EUR
500+0.27 EUR
1000+0.25 EUR
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SSM6N7002BFU,LF SSM6N7002BFU,LF Toshiba Semiconductor and Storage SSM6N7002BFU.pdf Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Produkt ist nicht verfügbar
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TC7SB3157CFU,LF TC7SB3157CFU,LF Toshiba Semiconductor and Storage docget.jsp?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX SGL 1:2 US6
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TC7WPB9306FC(TE85L TC7WPB9306FC(TE85L Toshiba Semiconductor and Storage Description: IC BUS SWITCH 2 X 1:1 CST8
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: CST8
Produkt ist nicht verfügbar
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TC7WPB9307FC(TE85L TC7WPB9307FC(TE85L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WPB9306FK Description: IC BUS SWITCH SPST DUAL CST8
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TC7WPB9307FK(T5L,F TC7WPB9307FK(T5L,F Toshiba Semiconductor and Storage TC7WPB9306FK_datasheet_en_20220907.pdf?did=12388&prodName=TC7WPB9306FK Description: IC BUS SWITCH 2 X 1:1 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
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TC7MB3125CFK-EL(M) Toshiba Semiconductor and Storage docget.jsp?did=6994&prodName=TC7MB3125CFK Description: IC BUS SWITCH LOCAP QUAD 14VSSOP
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TC7MB3125CFT-EL(M) TC7MB3125CFT-EL(M) Toshiba Semiconductor and Storage docget.jsp?did=6994&prodName=TC7MB3125CFK Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
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TC7MBL3257CFK-EL TC7MBL3257CFK-EL Toshiba Semiconductor and Storage docget.jsp?did=11481&prodName=TC7MBL3257CFK Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
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TC7USB221FT(EL,M) TC7USB221FT(EL,M) Toshiba Semiconductor and Storage docget.jsp?did=22004&prodName=TC7USB221FT Description: IC USB SWITCH SPDT DUAL 14-TSSOP
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1SS352(TH3,F,D) 1SS352(TH3,F,D) Toshiba Semiconductor and Storage 1SS352_en_datasheet_071101.pdf Description: DIODE SWITCHING 80V 0.1A USC
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1SS389(TL3,F,D) 1SS389(TL3,F,D) Toshiba Semiconductor and Storage 1SS389_en_datasheet_071101.pdf Description: DIODE SCHOTTKY 10V 0.1A ESC
auf Bestellung 37125 Stücke:
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2SA1586SU-GR,LF 2SA1586SU-GR,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SA1586 Description: TRANS PNP 50V 0.15A USM
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2SC2712S-Y,LF 2SC2712S-Y,LF Toshiba Semiconductor and Storage 6473.pdf Description: TRANSISTOR NPN 50V 150MA S-MINI
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DF2B6.8FS(TPL4,D) DF2B6.8FS(TPL4,D) Toshiba Semiconductor and Storage DF2B6.8FS.pdf Description: TVS DIODE 5VWM 8.5VC FSC
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DF3A6.8LSU,LF DF3A6.8LSU,LF Toshiba Semiconductor and Storage Description: TVS DIODE
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RN1302SU,LF RN1302SU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1302 Description: TRANS PREBIAS NPN 0.1W USM
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RN1405S,LF RN1405S,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1401 Description: TRANS PREBIAS NPN 0.2W S-MINI
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RN2402S,LF RN2402S,LF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2401 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
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TC7SB3157CFU,LF TC7SB3157CFU,LF Toshiba Semiconductor and Storage docget.jsp?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX SGL 1:2 US6
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TC7WPB9307FC(TE85L TC7WPB9307FC(TE85L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WPB9306FK Description: IC BUS SWITCH SPST DUAL CST8
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TK100E08N1,S1X TK100E08N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=12754&prodName=TK100E08N1 Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
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3+8.2 EUR
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TK22E10N1,S1X TK22E10N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=12796&prodName=TK22E10N1 Description: MOSFET N CH 100V 52A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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TK40E10N1,S1X TK40E10N1,S1X Toshiba Semiconductor and Storage TK40E10N1_datasheet_en_20140630.pdf?did=11929&prodName=TK40E10N1 Description: MOSFET N CH 100V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
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6+3.1 EUR
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TK65E10N1,S1X TK65E10N1,S1X Toshiba Semiconductor and Storage TK65E10N1_datasheet_en_20140630.pdf?did=11934&prodName=TK65E10N1 Description: MOSFET N CH 100V 148A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 148A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 1061 Stücke:
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3+5.98 EUR
50+3.01 EUR
100+2.74 EUR
500+2.57 EUR
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TK100E10N1,S1X TK100E10N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=12867&prodName=TK100E10N1 Description: MOSFET N-CH 100V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
auf Bestellung 1683 Stücke:
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3+7.8 EUR
50+3.98 EUR
100+3.8 EUR
500+3.39 EUR
1000+3.36 EUR
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1SS393SU,LF 1SS393SU,LF Toshiba Semiconductor and Storage Description: DIODE ARR SCHOTT 40V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Produkt ist nicht verfügbar
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SSM6N37FE,LM(T SSM6N37FE,LM(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N37FE Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
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CES388,L3F CES388,L3F Toshiba Semiconductor and Storage docget.jsp?did=13102&prodName=CES388 Description: DIODE SCHOTTKY 40V 100MA ESC
auf Bestellung 8000 Stücke:
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SSM6N48FU,RF SSM6N48FU,RF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N48FU Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
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CES520,L3F CES520,L3F Toshiba Semiconductor and Storage docget.jsp?did=7074&prodName=CES520 Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 32000 Stücke:
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8000+0.032 EUR
16000+0.03 EUR
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SSM6P47NU,LF(T SSM6P47NU,LF(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6P47NU Description: MOSFET 2P-CH 20V 4A 2-2Y1A
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CES521,L3F CES521,L3F Toshiba Semiconductor and Storage CES521_datasheet_en_20140414.pdf?did=7054&prodName=CES521 Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
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8000+0.05 EUR
16000+0.044 EUR
24000+0.039 EUR
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SSM6P49NU,LF SSM6P49NU,LF Toshiba Semiconductor and Storage SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 6000 Stücke:
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3000+0.26 EUR
6000+0.24 EUR
Mindestbestellmenge: 3000
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CUS551V30,H3F CUS551V30,H3F Toshiba Semiconductor and Storage docget.jsp?did=10394&prodName=CUS551V30 Description: DIODE SCHOTTKY 30V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
auf Bestellung 45000 Stücke:
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3000+0.058 EUR
6000+0.053 EUR
9000+0.052 EUR
15000+0.049 EUR
30000+0.048 EUR
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TC75S63TU,LF TC75S63TU,LF Toshiba Semiconductor and Storage TC75S63TU_datasheet_en_20140301.pdf?did=13393&prodName=TC75S63TU Description: IC CMOS 1 CIRCUIT UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 500µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 3000 Stücke:
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3000+0.22 EUR
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DF2B6.8M1ACT,L3F DF2B6.8M1ACT,L3F Toshiba Semiconductor and Storage docget.jsp?did=13209&prodName=DF2B6.8M1ACT Description: TVS DIODE 5VWM 20VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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1SS387,L3F 1SS387.pdf
1SS387,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 92048 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
118+0.15 EUR
180+0.098 EUR
500+0.079 EUR
1000+0.072 EUR
2000+0.066 EUR
Mindestbestellmenge: 72
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1SS389(TL3,F,D) 1SS389_en_datasheet_071101.pdf
1SS389(TL3,F,D)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 0.1A ESC
auf Bestellung 37125 Stücke:
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1SS405,H3F docget.jsp?did=22692&prodName=1SS405
1SS405,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 30717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
117+0.15 EUR
147+0.12 EUR
500+0.078 EUR
1000+0.071 EUR
2000+0.07 EUR
Mindestbestellmenge: 72
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1SS416,L3M docget.jsp?did=344&prodName=1SS416
1SS416,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 31162 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
95+0.19 EUR
135+0.13 EUR
500+0.096 EUR
1000+0.075 EUR
2000+0.071 EUR
5000+0.064 EUR
Mindestbestellmenge: 59
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2SA1162S-Y,LF 2SA1162_datasheet_en_20211006.pdf?did=19351&prodName=2SA1162
2SA1162S-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SA1586SU-GR,LF docget.jsp?type=datasheet&lang=en&pid=2SA1586
2SA1586SU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
auf Bestellung 2334 Stücke:
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2SA1586SU-Y,LF 2SA1586_datasheet_en_20210706.pdf?did=19170&prodName=2SA1586
2SA1586SU-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC2712-GR,LF docget.jsp?did=19227&prodName=2SC2712
2SC2712-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 24151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
104+0.17 EUR
168+0.11 EUR
500+0.077 EUR
1000+0.067 EUR
Mindestbestellmenge: 67
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2SC2712S-Y,LF 6473.pdf
2SC2712S-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN 50V 150MA S-MINI
Produkt ist nicht verfügbar
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2SC4116-GR,LF docget.jsp?did=19292&prodName=2SC4116
2SC4116-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 15584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
122+0.14 EUR
197+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
Mindestbestellmenge: 72
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2SC4116SU-Y,LF 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116
2SC4116SU-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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DF2B6.8FS(TPL4,D) DF2B6.8FS.pdf
DF2B6.8FS(TPL4,D)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
Produkt ist nicht verfügbar
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DF2S6.8FS,L3M docget.jsp?did=22219&prodName=DF2S6.8FS
DF2S6.8FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
auf Bestellung 462549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
159+0.11 EUR
433+0.041 EUR
500+0.037 EUR
1000+0.034 EUR
2000+0.033 EUR
5000+0.032 EUR
Mindestbestellmenge: 112
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DF3A6.8LSU,LF
DF3A6.8LSU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE
auf Bestellung 6000 Stücke:
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RN1302SU,LF docget.jsp?type=datasheet&lang=en&pid=RN1302
RN1302SU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 10784 Stücke:
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RN1401,LF docget.jsp?did=18787&prodName=RN1401
RN1401,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 23630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
160+0.11 EUR
500+0.081 EUR
1000+0.071 EUR
Mindestbestellmenge: 63
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RN1404S,LF docget.jsp?did=18787&prodName=RN1401
RN1404S,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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RN1405S,LF docget.jsp?type=datasheet&lang=en&pid=RN1401
RN1405S,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 1594 Stücke:
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RN1406,LF docget.jsp?did=18787&prodName=RN1401
RN1406,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
92+0.19 EUR
149+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
Mindestbestellmenge: 56
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RN2402S,LF docget.jsp?did=18874&prodName=RN2401
RN2402S,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Produkt ist nicht verfügbar
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SSM3K17SU,LF
SSM3K17SU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 100MA USM
Produkt ist nicht verfügbar
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SSM3K36FS,LF docget.jsp?did=11220&prodName=SSM3K36FS
SSM3K36FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
auf Bestellung 5705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
85+0.21 EUR
208+0.085 EUR
Mindestbestellmenge: 56
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SSM3K7002BS,LF SSM3K7002BS.pdf
SSM3K7002BS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Produkt ist nicht verfügbar
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SSM6J501NU,LF docget.jsp?did=6841&prodName=SSM6J501NU
SSM6J501NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
auf Bestellung 3891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
37+0.48 EUR
100+0.34 EUR
500+0.27 EUR
1000+0.25 EUR
Mindestbestellmenge: 23
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SSM6N7002BFU,LF SSM6N7002BFU.pdf
SSM6N7002BFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Produkt ist nicht verfügbar
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TC7SB3157CFU,LF docget.jsp?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX SGL 1:2 US6
auf Bestellung 2412 Stücke:
Lieferzeit 10-14 Tag (e)
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TC7WPB9306FC(TE85L
TC7WPB9306FC(TE85L
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 CST8
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: CST8
Produkt ist nicht verfügbar
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TC7WPB9307FC(TE85L docget.jsp?type=datasheet&lang=en&pid=TC7WPB9306FK
TC7WPB9307FC(TE85L
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
auf Bestellung 9904 Stücke:
Lieferzeit 10-14 Tag (e)
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TC7WPB9307FK(T5L,F TC7WPB9306FK_datasheet_en_20220907.pdf?did=12388&prodName=TC7WPB9306FK
TC7WPB9307FK(T5L,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
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TC7MB3125CFK-EL(M) docget.jsp?did=6994&prodName=TC7MB3125CFK
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14VSSOP
Produkt ist nicht verfügbar
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TC7MB3125CFT-EL(M) docget.jsp?did=6994&prodName=TC7MB3125CFK
TC7MB3125CFT-EL(M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
auf Bestellung 3974 Stücke:
Lieferzeit 10-14 Tag (e)
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TC7MBL3257CFK-EL docget.jsp?did=11481&prodName=TC7MBL3257CFK
TC7MBL3257CFK-EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
auf Bestellung 3574 Stücke:
Lieferzeit 10-14 Tag (e)
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TC7USB221FT(EL,M) docget.jsp?did=22004&prodName=TC7USB221FT
TC7USB221FT(EL,M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 14-TSSOP
auf Bestellung 5558 Stücke:
Lieferzeit 10-14 Tag (e)
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1SS352(TH3,F,D) 1SS352_en_datasheet_071101.pdf
1SS352(TH3,F,D)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SWITCHING 80V 0.1A USC
auf Bestellung 61303 Stücke:
Lieferzeit 10-14 Tag (e)
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1SS389(TL3,F,D) 1SS389_en_datasheet_071101.pdf
1SS389(TL3,F,D)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 0.1A ESC
auf Bestellung 37125 Stücke:
Lieferzeit 10-14 Tag (e)
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2SA1586SU-GR,LF docget.jsp?type=datasheet&lang=en&pid=2SA1586
2SA1586SU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Produkt ist nicht verfügbar
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2SC2712S-Y,LF 6473.pdf
2SC2712S-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN 50V 150MA S-MINI
Produkt ist nicht verfügbar
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DF2B6.8FS(TPL4,D) DF2B6.8FS.pdf
DF2B6.8FS(TPL4,D)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF3A6.8LSU,LF
DF3A6.8LSU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1302SU,LF docget.jsp?type=datasheet&lang=en&pid=RN1302
RN1302SU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 10784 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1405S,LF docget.jsp?type=datasheet&lang=en&pid=RN1401
RN1405S,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 1594 Stücke:
Lieferzeit 10-14 Tag (e)
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RN2402S,LF docget.jsp?did=18874&prodName=RN2401
RN2402S,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Produkt ist nicht verfügbar
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TC7SB3157CFU,LF docget.jsp?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX SGL 1:2 US6
auf Bestellung 2412 Stücke:
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TC7WPB9307FC(TE85L docget.jsp?type=datasheet&lang=en&pid=TC7WPB9306FK
TC7WPB9307FC(TE85L
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
auf Bestellung 9904 Stücke:
Lieferzeit 10-14 Tag (e)
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TK100E08N1,S1X docget.jsp?did=12754&prodName=TK100E08N1
TK100E08N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.2 EUR
50+3.87 EUR
Mindestbestellmenge: 3
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TK22E10N1,S1X docget.jsp?did=12796&prodName=TK22E10N1
TK22E10N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 52A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
Mindestbestellmenge: 6
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TK40E10N1,S1X TK40E10N1_datasheet_en_20140630.pdf?did=11929&prodName=TK40E10N1
TK40E10N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.1 EUR
Mindestbestellmenge: 6
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TK65E10N1,S1X TK65E10N1_datasheet_en_20140630.pdf?did=11934&prodName=TK65E10N1
TK65E10N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 148A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 148A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 1061 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.98 EUR
50+3.01 EUR
100+2.74 EUR
500+2.57 EUR
1000+2.46 EUR
Mindestbestellmenge: 3
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TK100E10N1,S1X docget.jsp?did=12867&prodName=TK100E10N1
TK100E10N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
auf Bestellung 1683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.8 EUR
50+3.98 EUR
100+3.8 EUR
500+3.39 EUR
1000+3.36 EUR
Mindestbestellmenge: 3
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1SS393SU,LF
1SS393SU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 40V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Produkt ist nicht verfügbar
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SSM6N37FE,LM(T docget.jsp?type=datasheet&lang=en&pid=SSM6N37FE
SSM6N37FE,LM(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Produkt ist nicht verfügbar
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CES388,L3F docget.jsp?did=13102&prodName=CES388
CES388,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM6N48FU,RF docget.jsp?type=datasheet&lang=en&pid=SSM6N48FU
SSM6N48FU,RF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Produkt ist nicht verfügbar
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CES520,L3F docget.jsp?did=7074&prodName=CES520
CES520,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.032 EUR
16000+0.03 EUR
Mindestbestellmenge: 8000
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SSM6P47NU,LF(T docget.jsp?type=datasheet&lang=en&pid=SSM6P47NU
SSM6P47NU,LF(T
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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CES521,L3F CES521_datasheet_en_20140414.pdf?did=7054&prodName=CES521
CES521,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.05 EUR
16000+0.044 EUR
24000+0.039 EUR
Mindestbestellmenge: 8000
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SSM6P49NU,LF SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU
SSM6P49NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
Mindestbestellmenge: 3000
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CUS551V30,H3F docget.jsp?did=10394&prodName=CUS551V30
CUS551V30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.058 EUR
6000+0.053 EUR
9000+0.052 EUR
15000+0.049 EUR
30000+0.048 EUR
Mindestbestellmenge: 3000
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TC75S63TU,LF TC75S63TU_datasheet_en_20140301.pdf?did=13393&prodName=TC75S63TU
TC75S63TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 500µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
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DF2B6.8M1ACT,L3F docget.jsp?did=13209&prodName=DF2B6.8M1ACT
DF2B6.8M1ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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