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1SS389(TL3,F,D) 1SS389(TL3,F,D) Toshiba Semiconductor and Storage 1SS389_en_datasheet_071101.pdf Description: DIODE SCHOTTKY 10V 0.1A ESC
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
1SS405,H3F 1SS405,H3F Toshiba Semiconductor and Storage 1SS405_datasheet_en_20140301.pdf?did=22692&prodName=1SS405 Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.052 EUR
8000+ 0.048 EUR
12000+ 0.041 EUR
Mindestbestellmenge: 4000
1SS416,L3M 1SS416,L3M Toshiba Semiconductor and Storage 1SS416_datasheet_en_20140708.pdf?did=344&prodName=1SS416 Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.059 EUR
20000+ 0.053 EUR
Mindestbestellmenge: 10000
2SA1586SU-GR,LF 2SA1586SU-GR,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SA1586 Description: TRANS PNP 50V 0.15A USM
Produkt ist nicht verfügbar
2SA1586SU-Y,LF 2SA1586SU-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
2SC2712-GR,LF 2SC2712-GR,LF Toshiba Semiconductor and Storage 2SC2712_datasheet_en_20220203.pdf?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 50400 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.057 EUR
6000+ 0.051 EUR
9000+ 0.047 EUR
15000+ 0.044 EUR
21000+ 0.042 EUR
30000+ 0.04 EUR
Mindestbestellmenge: 3000
2SC2712S-Y,LF 2SC2712S-Y,LF Toshiba Semiconductor and Storage 6473.pdf Description: TRANSISTOR NPN 50V 150MA S-MINI
Produkt ist nicht verfügbar
2SC4116-GR,LF 2SC4116-GR,LF Toshiba Semiconductor and Storage 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.049 EUR
6000+ 0.046 EUR
9000+ 0.039 EUR
Mindestbestellmenge: 3000
2SC4116SU-Y,LF 2SC4116SU-Y,LF Toshiba Semiconductor and Storage 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
DF2B6.8FS(TPL4,D) DF2B6.8FS(TPL4,D) Toshiba Semiconductor and Storage DF2B6.8FS.pdf Description: TVS DIODE 5VWM 8.5VC FSC
Produkt ist nicht verfügbar
DF2S6.8FS,L3M DF2S6.8FS,L3M Toshiba Semiconductor and Storage DF2S6.8FS_datasheet_en_20211216.pdf?did=22219&prodName=DF2S6.8FS Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
auf Bestellung 510000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.029 EUR
20000+ 0.026 EUR
30000+ 0.025 EUR
50000+ 0.024 EUR
Mindestbestellmenge: 10000
DF3A6.8LSU,LF DF3A6.8LSU,LF Toshiba Semiconductor and Storage Description: TVS DIODE
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1302SU,LF RN1302SU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1302 Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1401,LF RN1401,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.056 EUR
6000+ 0.052 EUR
Mindestbestellmenge: 3000
RN1402S,LF RN1402S,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
RN1404S,LF RN1404S,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN1405S,LF RN1405S,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1401 Description: TRANS PREBIAS NPN 0.2W S-MINI
Produkt ist nicht verfügbar
RN1406,LF RN1406,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.058 EUR
Mindestbestellmenge: 3000
SSM3K17SU,LF SSM3K17SU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 50V 100MA USM
Produkt ist nicht verfügbar
SSM3K36FS,LF SSM3K36FS,LF Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 20V 500MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.074 EUR
6000+ 0.066 EUR
Mindestbestellmenge: 3000
SSM3K7002BS,LF SSM3K7002BS,LF Toshiba Semiconductor and Storage SSM3K7002BS.pdf Description: MOSFET N-CH 60V 200MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Produkt ist nicht verfügbar
SSM6J501NU,LF SSM6J501NU,LF Toshiba Semiconductor and Storage docget.jsp?did=6841&prodName=SSM6J501NU Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
6000+ 0.2 EUR
9000+ 0.19 EUR
15000+ 0.18 EUR
21000+ 0.17 EUR
30000+ 0.16 EUR
Mindestbestellmenge: 3000
SSM6N7002BFU,LF SSM6N7002BFU,LF Toshiba Semiconductor and Storage SSM6N7002BFU.pdf Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Produkt ist nicht verfügbar
TC7SB3157CFU,LF TC7SB3157CFU,LF Toshiba Semiconductor and Storage docget.jsp?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX SGL 1:2 US6
Produkt ist nicht verfügbar
TC7WPB9306FC(TE85L TC7WPB9306FC(TE85L Toshiba Semiconductor and Storage docget.jsp?did=12388&prodName=TC7WPB9306FK Description: IC BUS SWITCH 2 X 1:1 CST8
Produkt ist nicht verfügbar
TC7WPB9306FK,LF TC7WPB9306FK,LF Toshiba Semiconductor and Storage docget.jsp?did=12388&prodName=TC7WPB9306FK Description: IC BUS SWITCH SPST DUAL US8
Produkt ist nicht verfügbar
TC7WPB9307FC(TE85L TC7WPB9307FC(TE85L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WPB9306FK Description: IC BUS SWITCH SPST DUAL CST8
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
TC7WPB9307FK(T5L,F TC7WPB9307FK(T5L,F Toshiba Semiconductor and Storage docget.jsp?did=12388&prodName=TC7WPB9306FK Description: IC BUS SWITCH SPST DUAL US8
Produkt ist nicht verfügbar
TC7MB3125CFK-EL(M) Toshiba Semiconductor and Storage docget.jsp?did=6994&prodName=TC7MB3125CFK Description: IC BUS SWITCH LOCAP QUAD 14VSSOP
Produkt ist nicht verfügbar
TC7MB3125CFT-EL(M) TC7MB3125CFT-EL(M) Toshiba Semiconductor and Storage docget.jsp?did=6994&prodName=TC7MB3125CFK Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
auf Bestellung 3974 Stücke:
Lieferzeit 10-14 Tag (e)
TC7MB3245CFK-EL(M) TC7MB3245CFK-EL(M) Toshiba Semiconductor and Storage TC7MB3245FT,FK.pdf Description: IC BUS SWITCH LOCAP OCTAL 20SSOP
auf Bestellung 3881 Stücke:
Lieferzeit 10-14 Tag (e)
TC7MB3245CFT-EL(M) TC7MB3245CFT-EL(M) Toshiba Semiconductor and Storage TC7MB3245FT,FK.pdf Description: IC BUS SWITCH LOCAP OCT 20TSSOP
Produkt ist nicht verfügbar
TC7MB3257CFK-EL(M) TC7MB3257CFK-EL(M) Toshiba Semiconductor and Storage docget.jsp?did=7040&prodName=TC7MB3257CFK Description: IC MUX/DEMUX QUAD 1:2 16-VSSOP
auf Bestellung 4723 Stücke:
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TC7MB3257CFT-EL(M) TC7MB3257CFT-EL(M) Toshiba Semiconductor and Storage docget.jsp?did=7040&prodName=TC7MB3257CFK Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
Produkt ist nicht verfügbar
TC7MBL3257CFK-EL TC7MBL3257CFK-EL Toshiba Semiconductor and Storage docget.jsp?did=11481&prodName=TC7MBL3257CFK Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
auf Bestellung 3574 Stücke:
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TC7QPB9306FT(EL) TC7QPB9306FT(EL) Toshiba Semiconductor and Storage docget.jsp?did=1523&prodName=TC7QPB9306FT Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
auf Bestellung 3905 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+ 0.81 EUR
25+ 0.75 EUR
100+ 0.6 EUR
250+ 0.56 EUR
500+ 0.47 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 19
TC7QPB9307FT(EL) TC7QPB9307FT(EL) Toshiba Semiconductor and Storage docget.jsp?did=1523&prodName=TC7QPB9306FT Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
auf Bestellung 5860 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+ 0.82 EUR
25+ 0.76 EUR
100+ 0.61 EUR
250+ 0.57 EUR
500+ 0.48 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 19
TC7USB221FT(EL,M) TC7USB221FT(EL,M) Toshiba Semiconductor and Storage docget.jsp?did=22004&prodName=TC7USB221FT Description: IC USB SWITCH SPDT DUAL 14-TSSOP
auf Bestellung 5558 Stücke:
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1SS184,LF 1SS184,LF Toshiba Semiconductor and Storage docget.jsp?did=3265&prodName=1SS184 Description: DIODE ARRAY GP 80V 100MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 26338 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
90+ 0.2 EUR
144+ 0.12 EUR
500+ 0.09 EUR
1000+ 0.079 EUR
Mindestbestellmenge: 53
1SS193,LF 1SS193,LF Toshiba Semiconductor and Storage 1SS193_datasheet_en_20171019.pdf?did=3272&prodName=1SS193 Description: DIODE GEN PURP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 55824 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
75+ 0.24 EUR
153+ 0.12 EUR
500+ 0.096 EUR
1000+ 0.067 EUR
Mindestbestellmenge: 53
1SS294,LF 1SS294,LF Toshiba Semiconductor and Storage Description: DIODE SCHOTTKY 40V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 4373 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
48+ 0.37 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
1SS301SU,LF 1SS301SU,LF Toshiba Semiconductor and Storage 1SS301_datasheet_en_20210625.pdf?did=3294&prodName=1SS301 Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
1SS352(TH3,F,D) 1SS352(TH3,F,D) Toshiba Semiconductor and Storage 1SS352_en_datasheet_071101.pdf Description: DIODE SWITCHING 80V 0.1A USC
auf Bestellung 61303 Stücke:
Lieferzeit 10-14 Tag (e)
1SS387,L3F 1SS387,L3F Toshiba Semiconductor and Storage 1SS387.pdf Description: DIODE GEN PURP 80V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 105629 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
93+ 0.19 EUR
150+ 0.12 EUR
500+ 0.086 EUR
1000+ 0.076 EUR
2000+ 0.067 EUR
Mindestbestellmenge: 56
1SS389,H3F 1SS389,H3F Toshiba Semiconductor and Storage Description: DIODE SCHOTTKY 40V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Produkt ist nicht verfügbar
1SS389(TL3,F,D) 1SS389(TL3,F,D) Toshiba Semiconductor and Storage 1SS389_en_datasheet_071101.pdf Description: DIODE SCHOTTKY 10V 0.1A ESC
auf Bestellung 37125 Stücke:
Lieferzeit 10-14 Tag (e)
1SS405,H3F 1SS405,H3F Toshiba Semiconductor and Storage 1SS405_datasheet_en_20140301.pdf?did=22692&prodName=1SS405 Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 42065 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
85+ 0.21 EUR
172+ 0.1 EUR
500+ 0.086 EUR
1000+ 0.059 EUR
2000+ 0.051 EUR
Mindestbestellmenge: 56
1SS416,L3M 1SS416,L3M Toshiba Semiconductor and Storage 1SS416_datasheet_en_20140708.pdf?did=344&prodName=1SS416 Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 34171 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
83+ 0.21 EUR
133+ 0.13 EUR
500+ 0.097 EUR
1000+ 0.086 EUR
2000+ 0.076 EUR
5000+ 0.065 EUR
Mindestbestellmenge: 50
2SA1162S-Y,LF 2SA1162S-Y,LF Toshiba Semiconductor and Storage 2SA1162_datasheet_en_20211006.pdf?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SA1586SU-GR,LF 2SA1586SU-GR,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SA1586 Description: TRANS PNP 50V 0.15A USM
auf Bestellung 2334 Stücke:
Lieferzeit 10-14 Tag (e)
2SA1586SU-Y,LF 2SA1586SU-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
2SC2712-GR,LF 2SC2712-GR,LF Toshiba Semiconductor and Storage 2SC2712_datasheet_en_20220203.pdf?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 50589 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
102+ 0.17 EUR
164+ 0.11 EUR
500+ 0.078 EUR
1000+ 0.069 EUR
Mindestbestellmenge: 63
2SC2712S-Y,LF 2SC2712S-Y,LF Toshiba Semiconductor and Storage 6473.pdf Description: TRANSISTOR NPN 50V 150MA S-MINI
Produkt ist nicht verfügbar
2SC4116-GR,LF 2SC4116-GR,LF Toshiba Semiconductor and Storage 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 21201 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
2SC4116SU-Y,LF 2SC4116SU-Y,LF Toshiba Semiconductor and Storage 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
DF2B6.8FS(TPL4,D) DF2B6.8FS(TPL4,D) Toshiba Semiconductor and Storage DF2B6.8FS.pdf Description: TVS DIODE 5VWM 8.5VC FSC
Produkt ist nicht verfügbar
DF2S6.8FS,L3M DF2S6.8FS,L3M Toshiba Semiconductor and Storage DF2S6.8FS_datasheet_en_20211216.pdf?did=22219&prodName=DF2S6.8FS Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
auf Bestellung 540294 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
159+ 0.11 EUR
260+ 0.068 EUR
500+ 0.049 EUR
1000+ 0.043 EUR
2000+ 0.038 EUR
5000+ 0.032 EUR
Mindestbestellmenge: 100
DF3A6.8LSU,LF DF3A6.8LSU,LF Toshiba Semiconductor and Storage Description: TVS DIODE
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1302SU,LF RN1302SU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1302 Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 10784 Stücke:
Lieferzeit 10-14 Tag (e)
RN1401,LF RN1401,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 10268 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
77+ 0.23 EUR
157+ 0.11 EUR
500+ 0.093 EUR
1000+ 0.065 EUR
Mindestbestellmenge: 53
1SS389(TL3,F,D) 1SS389_en_datasheet_071101.pdf
1SS389(TL3,F,D)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 0.1A ESC
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
1SS405,H3F 1SS405_datasheet_en_20140301.pdf?did=22692&prodName=1SS405
1SS405,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.052 EUR
8000+ 0.048 EUR
12000+ 0.041 EUR
Mindestbestellmenge: 4000
1SS416,L3M 1SS416_datasheet_en_20140708.pdf?did=344&prodName=1SS416
1SS416,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.059 EUR
20000+ 0.053 EUR
Mindestbestellmenge: 10000
2SA1586SU-GR,LF docget.jsp?type=datasheet&lang=en&pid=2SA1586
2SA1586SU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Produkt ist nicht verfügbar
2SA1586SU-Y,LF docget.jsp?did=19170&prodName=2SA1586
2SA1586SU-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
2SC2712-GR,LF 2SC2712_datasheet_en_20220203.pdf?did=19227&prodName=2SC2712
2SC2712-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 50400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.057 EUR
6000+ 0.051 EUR
9000+ 0.047 EUR
15000+ 0.044 EUR
21000+ 0.042 EUR
30000+ 0.04 EUR
Mindestbestellmenge: 3000
2SC2712S-Y,LF 6473.pdf
2SC2712S-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN 50V 150MA S-MINI
Produkt ist nicht verfügbar
2SC4116-GR,LF 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116
2SC4116-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.049 EUR
6000+ 0.046 EUR
9000+ 0.039 EUR
Mindestbestellmenge: 3000
2SC4116SU-Y,LF 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116
2SC4116SU-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
DF2B6.8FS(TPL4,D) DF2B6.8FS.pdf
DF2B6.8FS(TPL4,D)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
Produkt ist nicht verfügbar
DF2S6.8FS,L3M DF2S6.8FS_datasheet_en_20211216.pdf?did=22219&prodName=DF2S6.8FS
DF2S6.8FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
auf Bestellung 510000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.029 EUR
20000+ 0.026 EUR
30000+ 0.025 EUR
50000+ 0.024 EUR
Mindestbestellmenge: 10000
DF3A6.8LSU,LF
DF3A6.8LSU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1302SU,LF docget.jsp?type=datasheet&lang=en&pid=RN1302
RN1302SU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1401,LF docget.jsp?did=18787&prodName=RN1401
RN1401,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.056 EUR
6000+ 0.052 EUR
Mindestbestellmenge: 3000
RN1402S,LF docget.jsp?did=18787&prodName=RN1401
RN1402S,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
RN1404S,LF docget.jsp?did=18787&prodName=RN1401
RN1404S,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN1405S,LF docget.jsp?type=datasheet&lang=en&pid=RN1401
RN1405S,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Produkt ist nicht verfügbar
RN1406,LF docget.jsp?did=18787&prodName=RN1401
RN1406,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.058 EUR
Mindestbestellmenge: 3000
SSM3K17SU,LF
SSM3K17SU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 100MA USM
Produkt ist nicht verfügbar
SSM3K36FS,LF Mosfets_Prod_Guide.pdf
SSM3K36FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.074 EUR
6000+ 0.066 EUR
Mindestbestellmenge: 3000
SSM3K7002BS,LF SSM3K7002BS.pdf
SSM3K7002BS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Produkt ist nicht verfügbar
SSM6J501NU,LF docget.jsp?did=6841&prodName=SSM6J501NU
SSM6J501NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.2 EUR
9000+ 0.19 EUR
15000+ 0.18 EUR
21000+ 0.17 EUR
30000+ 0.16 EUR
Mindestbestellmenge: 3000
SSM6N7002BFU,LF SSM6N7002BFU.pdf
SSM6N7002BFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Produkt ist nicht verfügbar
TC7SB3157CFU,LF docget.jsp?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX SGL 1:2 US6
Produkt ist nicht verfügbar
TC7WPB9306FC(TE85L docget.jsp?did=12388&prodName=TC7WPB9306FK
TC7WPB9306FC(TE85L
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 CST8
Produkt ist nicht verfügbar
TC7WPB9306FK,LF docget.jsp?did=12388&prodName=TC7WPB9306FK
TC7WPB9306FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL US8
Produkt ist nicht verfügbar
TC7WPB9307FC(TE85L docget.jsp?type=datasheet&lang=en&pid=TC7WPB9306FK
TC7WPB9307FC(TE85L
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
TC7WPB9307FK(T5L,F docget.jsp?did=12388&prodName=TC7WPB9306FK
TC7WPB9307FK(T5L,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL US8
Produkt ist nicht verfügbar
TC7MB3125CFK-EL(M) docget.jsp?did=6994&prodName=TC7MB3125CFK
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14VSSOP
Produkt ist nicht verfügbar
TC7MB3125CFT-EL(M) docget.jsp?did=6994&prodName=TC7MB3125CFK
TC7MB3125CFT-EL(M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
auf Bestellung 3974 Stücke:
Lieferzeit 10-14 Tag (e)
TC7MB3245CFK-EL(M) TC7MB3245FT,FK.pdf
TC7MB3245CFK-EL(M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP OCTAL 20SSOP
auf Bestellung 3881 Stücke:
Lieferzeit 10-14 Tag (e)
TC7MB3245CFT-EL(M) TC7MB3245FT,FK.pdf
TC7MB3245CFT-EL(M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP OCT 20TSSOP
Produkt ist nicht verfügbar
TC7MB3257CFK-EL(M) docget.jsp?did=7040&prodName=TC7MB3257CFK
TC7MB3257CFK-EL(M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX QUAD 1:2 16-VSSOP
auf Bestellung 4723 Stücke:
Lieferzeit 10-14 Tag (e)
TC7MB3257CFT-EL(M) docget.jsp?did=7040&prodName=TC7MB3257CFK
TC7MB3257CFT-EL(M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
Produkt ist nicht verfügbar
TC7MBL3257CFK-EL docget.jsp?did=11481&prodName=TC7MBL3257CFK
TC7MBL3257CFK-EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
auf Bestellung 3574 Stücke:
Lieferzeit 10-14 Tag (e)
TC7QPB9306FT(EL) docget.jsp?did=1523&prodName=TC7QPB9306FT
TC7QPB9306FT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
auf Bestellung 3905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.81 EUR
25+ 0.75 EUR
100+ 0.6 EUR
250+ 0.56 EUR
500+ 0.47 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 19
TC7QPB9307FT(EL) docget.jsp?did=1523&prodName=TC7QPB9306FT
TC7QPB9307FT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
auf Bestellung 5860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.82 EUR
25+ 0.76 EUR
100+ 0.61 EUR
250+ 0.57 EUR
500+ 0.48 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 19
TC7USB221FT(EL,M) docget.jsp?did=22004&prodName=TC7USB221FT
TC7USB221FT(EL,M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 14-TSSOP
auf Bestellung 5558 Stücke:
Lieferzeit 10-14 Tag (e)
1SS184,LF docget.jsp?did=3265&prodName=1SS184
1SS184,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 26338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
90+ 0.2 EUR
144+ 0.12 EUR
500+ 0.09 EUR
1000+ 0.079 EUR
Mindestbestellmenge: 53
1SS193,LF 1SS193_datasheet_en_20171019.pdf?did=3272&prodName=1SS193
1SS193,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 55824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
75+ 0.24 EUR
153+ 0.12 EUR
500+ 0.096 EUR
1000+ 0.067 EUR
Mindestbestellmenge: 53
1SS294,LF
1SS294,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 4373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
48+ 0.37 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
1SS301SU,LF 1SS301_datasheet_en_20210625.pdf?did=3294&prodName=1SS301
1SS301SU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
1SS352(TH3,F,D) 1SS352_en_datasheet_071101.pdf
1SS352(TH3,F,D)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SWITCHING 80V 0.1A USC
auf Bestellung 61303 Stücke:
Lieferzeit 10-14 Tag (e)
1SS387,L3F 1SS387.pdf
1SS387,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 105629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
93+ 0.19 EUR
150+ 0.12 EUR
500+ 0.086 EUR
1000+ 0.076 EUR
2000+ 0.067 EUR
Mindestbestellmenge: 56
1SS389,H3F
1SS389,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Produkt ist nicht verfügbar
1SS389(TL3,F,D) 1SS389_en_datasheet_071101.pdf
1SS389(TL3,F,D)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 0.1A ESC
auf Bestellung 37125 Stücke:
Lieferzeit 10-14 Tag (e)
1SS405,H3F 1SS405_datasheet_en_20140301.pdf?did=22692&prodName=1SS405
1SS405,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 42065 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
85+ 0.21 EUR
172+ 0.1 EUR
500+ 0.086 EUR
1000+ 0.059 EUR
2000+ 0.051 EUR
Mindestbestellmenge: 56
1SS416,L3M 1SS416_datasheet_en_20140708.pdf?did=344&prodName=1SS416
1SS416,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 34171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
83+ 0.21 EUR
133+ 0.13 EUR
500+ 0.097 EUR
1000+ 0.086 EUR
2000+ 0.076 EUR
5000+ 0.065 EUR
Mindestbestellmenge: 50
2SA1162S-Y,LF 2SA1162_datasheet_en_20211006.pdf?did=19351&prodName=2SA1162
2SA1162S-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SA1586SU-GR,LF docget.jsp?type=datasheet&lang=en&pid=2SA1586
2SA1586SU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
auf Bestellung 2334 Stücke:
Lieferzeit 10-14 Tag (e)
2SA1586SU-Y,LF docget.jsp?did=19170&prodName=2SA1586
2SA1586SU-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
2SC2712-GR,LF 2SC2712_datasheet_en_20220203.pdf?did=19227&prodName=2SC2712
2SC2712-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 50589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
102+ 0.17 EUR
164+ 0.11 EUR
500+ 0.078 EUR
1000+ 0.069 EUR
Mindestbestellmenge: 63
2SC2712S-Y,LF 6473.pdf
2SC2712S-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN 50V 150MA S-MINI
Produkt ist nicht verfügbar
2SC4116-GR,LF 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116
2SC4116-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 21201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
2SC4116SU-Y,LF 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116
2SC4116SU-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
DF2B6.8FS(TPL4,D) DF2B6.8FS.pdf
DF2B6.8FS(TPL4,D)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
Produkt ist nicht verfügbar
DF2S6.8FS,L3M DF2S6.8FS_datasheet_en_20211216.pdf?did=22219&prodName=DF2S6.8FS
DF2S6.8FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
auf Bestellung 540294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
100+0.18 EUR
159+ 0.11 EUR
260+ 0.068 EUR
500+ 0.049 EUR
1000+ 0.043 EUR
2000+ 0.038 EUR
5000+ 0.032 EUR
Mindestbestellmenge: 100
DF3A6.8LSU,LF
DF3A6.8LSU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1302SU,LF docget.jsp?type=datasheet&lang=en&pid=RN1302
RN1302SU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 10784 Stücke:
Lieferzeit 10-14 Tag (e)
RN1401,LF docget.jsp?did=18787&prodName=RN1401
RN1401,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 10268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
77+ 0.23 EUR
157+ 0.11 EUR
500+ 0.093 EUR
1000+ 0.065 EUR
Mindestbestellmenge: 53
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