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TK18A50D(STA4,Q,M) TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK18A50D_datasheet_en_20131101.pdf?did=692&prodName=TK18A50D Description: MOSFET N-CH 500V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.03 EUR
Mindestbestellmenge: 4
TK18E10K3,S1X(S TK18E10K3,S1X(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 100V 18A TO-220AB
Produkt ist nicht verfügbar
TK19A45D(STA4,Q,M) TK19A45D(STA4,Q,M) Toshiba Semiconductor and Storage TK19A45D_datasheet_en_20131101.pdf?did=3454&prodName=TK19A45D Description: MOSFET N-CH 450V 19A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 43 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.48 EUR
Mindestbestellmenge: 4
TK20A25D,S5Q(M TK20A25D,S5Q(M Toshiba Semiconductor and Storage docget.jsp?did=6798&prodName=TK20A25D Description: MOSFET N-CH 250V 20A TO220SIS
Produkt ist nicht verfügbar
TK20E60U,S1X(S TK20E60U,S1X(S Toshiba Semiconductor and Storage docget.jsp?did=12851&prodName=TK20E60U Description: MOSFET N-CH 600V 20A TO-220AB
Produkt ist nicht verfügbar
TK20P04M1,RQ(S TK20P04M1,RQ(S Toshiba Semiconductor and Storage TK20P04M1_datasheet_en_20160316.pdf?did=3451&prodName=TK20P04M1 Description: MOSFET N-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 10 V
Produkt ist nicht verfügbar
TK20S04K3L(T6L1,NQ TK20S04K3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=10603&prodName=TK20S04K3L Description: MOSFET N-CH 40V 20A DPAK-3
Produkt ist nicht verfügbar
TK20S06K3L(T6L1,NQ TK20S06K3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=11263&prodName=TK20S06K3L Description: MOSFET N-CH 60V 20A DPAK
Produkt ist nicht verfügbar
TK25E06K3,S1X(S TK25E06K3,S1X(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 60V 25A TO-220AB
Produkt ist nicht verfügbar
TK2A65D(STA4,Q,M) TK2A65D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=7717&prodName=TK2A65D Description: MOSFET N-CH 650V 2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 3.26Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
10+ 2.79 EUR
Mindestbestellmenge: 8
TK2P60D(TE16L1,NQ) TK2P60D(TE16L1,NQ) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
TK2Q60D(Q) TK2Q60D(Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 2A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.18 EUR
14+ 1.88 EUR
Mindestbestellmenge: 12
TK30S06K3L(T6L1,NQ TK30S06K3L(T6L1,NQ Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Produkt ist nicht verfügbar
TK35E10K3(S1SS-Q) TK35E10K3(S1SS-Q) Toshiba Semiconductor and Storage Description: MOSFET N-CH 100V 35A TO-220AB
Produkt ist nicht verfügbar
TK3A60DA(STA4,Q,M) TK3A60DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK3A60DA Description: MOSFET N-CH 600V 2.5A TO-220SIS
Produkt ist nicht verfügbar
TK3A65DA(STA4,QM) TK3A65DA(STA4,QM) Toshiba Semiconductor and Storage TK3A65DA_datasheet_en_20131101.pdf?did=2338&prodName=TK3A65DA Description: MOSFET N-CH 650V 2.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.51Ohm @ 1.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
TK3A65D(STA4,Q,M) TK3A65D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK3A65D Description: MOSFET N-CH 650V 3A TO-220SIS
Produkt ist nicht verfügbar
TK40E10K3,S1X(S TK40E10K3,S1X(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 100V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
Produkt ist nicht verfügbar
TK40P03M1(T6RDS-Q) TK40P03M1(T6RDS-Q) Toshiba Semiconductor and Storage TK40P03M1_datasheet_en_20160217.pdf?did=1366&prodName=TK40P03M1 Description: MOSFET N-CH 30V 40A DPAK
Produkt ist nicht verfügbar
TK40S10K3Z(T6L1,NQ TK40S10K3Z(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=1584&prodName=TK40S10K3Z Description: MOSFET N-CH 100V 40A DPAK-3
Produkt ist nicht verfügbar
TK45P03M1,RQ(S TK45P03M1,RQ(S Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK45P03M1 Description: MOSFET N-CH 30V 45A DPAK-3
Produkt ist nicht verfügbar
TK4A50D(STA4,Q,M) TK4A50D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=22671&prodName=TK4A50D Description: MOSFET N-CH 500V 4A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
auf Bestellung 111 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.11 EUR
50+ 1.76 EUR
100+ 1.28 EUR
Mindestbestellmenge: 13
TK4A53D(STA4,Q,M) TK4A53D(STA4,Q,M) Toshiba Semiconductor and Storage TK4A53D_datasheet_en_20131101.pdf?did=603&prodName=TK4A53D Description: MOSFET N-CH 525V 4A TO220SIS
Produkt ist nicht verfügbar
TK4A55DA(STA4,Q,M) TK4A55DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=654&prodName=TK4A55DA Description: MOSFET N-CH 550V 3.5A TO220SIS
Produkt ist nicht verfügbar
TK4A55D(STA4,Q,M) TK4A55D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=924&prodName=TK4A55D Description: MOSFET N-CH 550V 4A TO220SIS
Produkt ist nicht verfügbar
TK4A60DB(STA4,Q,M) TK4A60DB(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=664&prodName=TK4A60DB Description: MOSFET N-CH 600V 3.7A TO220SIS
Produkt ist nicht verfügbar
TK4A65DA(STA4,Q,M) TK4A65DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=2374&prodName=TK4A65DA Description: MOSFET N-CH 650V 3.5A TO220SIS
Produkt ist nicht verfügbar
TK4P50D(T6RSS-Q) TK4P50D(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK4P50D Description: MOSFET N-CH 500V 4A DPAK-3
Produkt ist nicht verfügbar
TK4P55DA(T6RSS-Q) TK4P55DA(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK4P55DA Description: MOSFET N-CH 550V 3.5A DPAK-3
Produkt ist nicht verfügbar
TK4P55D(T6RSS-Q) TK4P55D(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK4P55D Description: MOSFET N-CH 550V 4A DPAK-3
Produkt ist nicht verfügbar
TK4P60DA(T6RSS-Q) TK4P60DA(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?did=2286&prodName=TK4P60DA Description: MOSFET N-CH 600V 3.5A DPAK-3
Produkt ist nicht verfügbar
TK4P60DB(T6RSS-Q) TK4P60DB(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?did=2438&prodName=TK4P60DB Description: MOSFET N-CH 600V 3.7A DPAK
Produkt ist nicht verfügbar
TK50E06K3A,S1X(S TK50E06K3A,S1X(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 60V 50A TO-220AB
Produkt ist nicht verfügbar
TK50E06K3(S1SS-Q) TK50E06K3(S1SS-Q) Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 50A TO-220AB
Produkt ist nicht verfügbar
TK50E08K3,S1X(S TK50E08K3,S1X(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 75V 50A TO220-3
Produkt ist nicht verfügbar
TK50E10K3(S1SS-Q) Toshiba Semiconductor and Storage Description: MOSFET N-CH 100V 50A TO-220AB
Produkt ist nicht verfügbar
TK50J60U(Q) TK50J60U(Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK50J60U Description: MOSFET N-CH 600V 50A TO-3PN
Produkt ist nicht verfügbar
TK5A45DA(STA4,Q,M) TK5A45DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=6321&prodName=TK5A45DA Description: MOSFET N-CH 450V 4.5A TO-220SIS
Produkt ist nicht verfügbar
TK5A53D(STA4,Q,M) TK5A53D(STA4,Q,M) Toshiba Semiconductor and Storage TK5A53D_datasheet_en_20131101.pdf?did=694&prodName=TK5A53D Description: MOSFET N-CH 525V 5A TO220SIS
Produkt ist nicht verfügbar
TK5A55D(STA4,Q,M) TK5A55D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=824&prodName=TK5A55D Description: MOSFET N-CH 550V 5A TO-220SIS
Produkt ist nicht verfügbar
TK5A60D(STA4,Q,M) TK5A60D(STA4,Q,M) Toshiba Semiconductor and Storage Description: MOSFET N-CH 600V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
50+ 2.88 EUR
Mindestbestellmenge: 8
TK5A65DA(STA4,Q,M) TK5A65DA(STA4,Q,M) Toshiba Semiconductor and Storage TK5A65DA_datasheet_en_20140105.pdf?did=6132&prodName=TK5A65DA Description: MOSFET N-CH 650V 4.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.67Ohm @ 2.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.67 EUR
10+ 3.29 EUR
Mindestbestellmenge: 8
TK60E08K3,S1X(S TK60E08K3,S1X(S Toshiba Semiconductor and Storage Description: MOSFET N-CH 75V 60A TO220-3
Produkt ist nicht verfügbar
TK60P03M1,RQ(S TK60P03M1,RQ(S Toshiba Semiconductor and Storage docget.jsp?did=7131&prodName=TK60P03M1 Description: MOSFET N-CH 30V 60A DPAK
Produkt ist nicht verfügbar
TK60S06K3L(T6L1,NQ TK60S06K3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=10593&prodName=TK60S06K3L Description: MOSFET N-CH 60V 60A DPAK
Produkt ist nicht verfügbar
TK65S04K3L(T6L1,NQ TK65S04K3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=11262&prodName=TK65S04K3L Description: MOSFET N-CH 40V 65A DPAK-3
Produkt ist nicht verfügbar
TK6A45DA(STA4,Q,M) TK6A45DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=8900&prodName=TK6A45DA Description: MOSFET N-CH 450V 5.5A TO220SIS
Produkt ist nicht verfügbar
TK6A50D(STA4,Q,M) TK6A50D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=1082&prodName=TK6A50D Description: MOSFET N-CH 500V 6A TO220SIS
Produkt ist nicht verfügbar
TK6A53D(STA4,Q,M) TK6A53D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=703&prodName=TK6A53D Description: MOSFET N-CH 525V 6A TO220SIS
Produkt ist nicht verfügbar
TK6A55DA(STA4,Q,M) TK6A55DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=927&prodName=TK6A55DA Description: MOSFET N-CH 550V 5.5A TO220SIS
Produkt ist nicht verfügbar
TK7A45DA(STA4,Q,M) TK7A45DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=4484&prodName=TK7A45DA Description: MOSFET N-CH 450V 6.5A TO-220SIS
Produkt ist nicht verfügbar
TK7A50D(STA4,Q,M) TK7A50D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=21793&prodName=TK7A50D Description: MOSFET N-CH 500V 7A TO220SIS
Produkt ist nicht verfügbar
TK7A55D(STA4,Q,M) TK7A55D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=2384&prodName=TK7A55D Description: MOSFET N-CH 550V 7A TO-220SIS
Produkt ist nicht verfügbar
TK7A65D(STA4,Q,M) TK7A65D(STA4,Q,M) Toshiba Semiconductor and Storage TK7A65D_datasheet_en_20131101.pdf?did=2386&prodName=TK7A65D Description: MOSFET N-CH 650V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.04 EUR
10+ 4.19 EUR
Mindestbestellmenge: 6
TK80S04K3L(T6L1,NQ TK80S04K3L(T6L1,NQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 10 V
Produkt ist nicht verfügbar
TK80S06K3L(T6L1,NQ TK80S06K3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=10574&prodName=TK80S06K3L Description: MOSFET N-CH 60V 80A DPAK
Produkt ist nicht verfügbar
TK8A45DA(STA4,Q,M) TK8A45DA(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 450V 7.5A TO-220SIS
Produkt ist nicht verfügbar
TK8A45D(STA4,Q,M) TK8A45D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=6102&prodName=TK8A45D Description: MOSFET N-CH 450V 8A TO220SIS
Produkt ist nicht verfügbar
TK8A50DA(STA4,Q,M) TK8A50DA(STA4,Q,M) Toshiba Semiconductor and Storage Description: MOSFET N-CH 500V 7.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.04Ohm @ 3.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 33 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.69 EUR
Mindestbestellmenge: 8
TK8A55DA(STA4,Q,M) TK8A55DA(STA4,Q,M) Toshiba Semiconductor and Storage TK8A55DA_datasheet_en_20131101.pdf?did=2380&prodName=TK8A55DA Description: MOSFET N-CH 550V 7.5A TO220SIS
Produkt ist nicht verfügbar
TK18A50D(STA4,Q,M) TK18A50D_datasheet_en_20131101.pdf?did=692&prodName=TK18A50D
TK18A50D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.03 EUR
Mindestbestellmenge: 4
TK18E10K3,S1X(S Mosfets_Prod_Guide.pdf
TK18E10K3,S1X(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 18A TO-220AB
Produkt ist nicht verfügbar
TK19A45D(STA4,Q,M) TK19A45D_datasheet_en_20131101.pdf?did=3454&prodName=TK19A45D
TK19A45D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 19A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 43 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.48 EUR
Mindestbestellmenge: 4
TK20A25D,S5Q(M docget.jsp?did=6798&prodName=TK20A25D
TK20A25D,S5Q(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 20A TO220SIS
Produkt ist nicht verfügbar
TK20E60U,S1X(S docget.jsp?did=12851&prodName=TK20E60U
TK20E60U,S1X(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO-220AB
Produkt ist nicht verfügbar
TK20P04M1,RQ(S TK20P04M1_datasheet_en_20160316.pdf?did=3451&prodName=TK20P04M1
TK20P04M1,RQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 10 V
Produkt ist nicht verfügbar
TK20S04K3L(T6L1,NQ docget.jsp?did=10603&prodName=TK20S04K3L
TK20S04K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A DPAK-3
Produkt ist nicht verfügbar
TK20S06K3L(T6L1,NQ docget.jsp?did=11263&prodName=TK20S06K3L
TK20S06K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 20A DPAK
Produkt ist nicht verfügbar
TK25E06K3,S1X(S Mosfets_Prod_Guide.pdf
TK25E06K3,S1X(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A TO-220AB
Produkt ist nicht verfügbar
TK2A65D(STA4,Q,M) docget.jsp?did=7717&prodName=TK2A65D
TK2A65D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 3.26Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
10+ 2.79 EUR
Mindestbestellmenge: 8
TK2P60D(TE16L1,NQ) Mosfets_Prod_Guide.pdf
TK2P60D(TE16L1,NQ)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
TK2Q60D(Q) Mosfets_Prod_Guide.pdf
TK2Q60D(Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.18 EUR
14+ 1.88 EUR
Mindestbestellmenge: 12
TK30S06K3L(T6L1,NQ Mosfets_Prod_Guide.pdf
TK30S06K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Produkt ist nicht verfügbar
TK35E10K3(S1SS-Q)
TK35E10K3(S1SS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 35A TO-220AB
Produkt ist nicht verfügbar
TK3A60DA(STA4,Q,M) docget.jsp?type=datasheet&lang=en&pid=TK3A60DA
TK3A60DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2.5A TO-220SIS
Produkt ist nicht verfügbar
TK3A65DA(STA4,QM) TK3A65DA_datasheet_en_20131101.pdf?did=2338&prodName=TK3A65DA
TK3A65DA(STA4,QM)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 2.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.51Ohm @ 1.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
TK3A65D(STA4,Q,M) docget.jsp?type=datasheet&lang=en&pid=TK3A65D
TK3A65D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 3A TO-220SIS
Produkt ist nicht verfügbar
TK40E10K3,S1X(S Mosfets_Prod_Guide.pdf
TK40E10K3,S1X(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
Produkt ist nicht verfügbar
TK40P03M1(T6RDS-Q) TK40P03M1_datasheet_en_20160217.pdf?did=1366&prodName=TK40P03M1
TK40P03M1(T6RDS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A DPAK
Produkt ist nicht verfügbar
TK40S10K3Z(T6L1,NQ docget.jsp?did=1584&prodName=TK40S10K3Z
TK40S10K3Z(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 40A DPAK-3
Produkt ist nicht verfügbar
TK45P03M1,RQ(S docget.jsp?type=datasheet&lang=en&pid=TK45P03M1
TK45P03M1,RQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A DPAK-3
Produkt ist nicht verfügbar
TK4A50D(STA4,Q,M) docget.jsp?did=22671&prodName=TK4A50D
TK4A50D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 4A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
auf Bestellung 111 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.11 EUR
50+ 1.76 EUR
100+ 1.28 EUR
Mindestbestellmenge: 13
TK4A53D(STA4,Q,M) TK4A53D_datasheet_en_20131101.pdf?did=603&prodName=TK4A53D
TK4A53D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 4A TO220SIS
Produkt ist nicht verfügbar
TK4A55DA(STA4,Q,M) docget.jsp?did=654&prodName=TK4A55DA
TK4A55DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 3.5A TO220SIS
Produkt ist nicht verfügbar
TK4A55D(STA4,Q,M) docget.jsp?did=924&prodName=TK4A55D
TK4A55D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 4A TO220SIS
Produkt ist nicht verfügbar
TK4A60DB(STA4,Q,M) docget.jsp?did=664&prodName=TK4A60DB
TK4A60DB(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.7A TO220SIS
Produkt ist nicht verfügbar
TK4A65DA(STA4,Q,M) docget.jsp?did=2374&prodName=TK4A65DA
TK4A65DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 3.5A TO220SIS
Produkt ist nicht verfügbar
TK4P50D(T6RSS-Q) docget.jsp?type=datasheet&lang=en&pid=TK4P50D
TK4P50D(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 4A DPAK-3
Produkt ist nicht verfügbar
TK4P55DA(T6RSS-Q) docget.jsp?type=datasheet&lang=en&pid=TK4P55DA
TK4P55DA(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 3.5A DPAK-3
Produkt ist nicht verfügbar
TK4P55D(T6RSS-Q) docget.jsp?type=datasheet&lang=en&pid=TK4P55D
TK4P55D(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 4A DPAK-3
Produkt ist nicht verfügbar
TK4P60DA(T6RSS-Q) docget.jsp?did=2286&prodName=TK4P60DA
TK4P60DA(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.5A DPAK-3
Produkt ist nicht verfügbar
TK4P60DB(T6RSS-Q) docget.jsp?did=2438&prodName=TK4P60DB
TK4P60DB(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.7A DPAK
Produkt ist nicht verfügbar
TK50E06K3A,S1X(S Mosfets_Prod_Guide.pdf
TK50E06K3A,S1X(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 50A TO-220AB
Produkt ist nicht verfügbar
TK50E06K3(S1SS-Q)
TK50E06K3(S1SS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 50A TO-220AB
Produkt ist nicht verfügbar
TK50E08K3,S1X(S Mosfets_Prod_Guide.pdf
TK50E08K3,S1X(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 50A TO220-3
Produkt ist nicht verfügbar
TK50E10K3(S1SS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 50A TO-220AB
Produkt ist nicht verfügbar
TK50J60U(Q) docget.jsp?type=datasheet&lang=en&pid=TK50J60U
TK50J60U(Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 50A TO-3PN
Produkt ist nicht verfügbar
TK5A45DA(STA4,Q,M) docget.jsp?did=6321&prodName=TK5A45DA
TK5A45DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 4.5A TO-220SIS
Produkt ist nicht verfügbar
TK5A53D(STA4,Q,M) TK5A53D_datasheet_en_20131101.pdf?did=694&prodName=TK5A53D
TK5A53D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 5A TO220SIS
Produkt ist nicht verfügbar
TK5A55D(STA4,Q,M) docget.jsp?did=824&prodName=TK5A55D
TK5A55D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 5A TO-220SIS
Produkt ist nicht verfügbar
TK5A60D(STA4,Q,M)
TK5A60D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
50+ 2.88 EUR
Mindestbestellmenge: 8
TK5A65DA(STA4,Q,M) TK5A65DA_datasheet_en_20140105.pdf?did=6132&prodName=TK5A65DA
TK5A65DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 4.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.67Ohm @ 2.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.67 EUR
10+ 3.29 EUR
Mindestbestellmenge: 8
TK60E08K3,S1X(S
TK60E08K3,S1X(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 60A TO220-3
Produkt ist nicht verfügbar
TK60P03M1,RQ(S docget.jsp?did=7131&prodName=TK60P03M1
TK60P03M1,RQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 60A DPAK
Produkt ist nicht verfügbar
TK60S06K3L(T6L1,NQ docget.jsp?did=10593&prodName=TK60S06K3L
TK60S06K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A DPAK
Produkt ist nicht verfügbar
TK65S04K3L(T6L1,NQ docget.jsp?did=11262&prodName=TK65S04K3L
TK65S04K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK-3
Produkt ist nicht verfügbar
TK6A45DA(STA4,Q,M) docget.jsp?did=8900&prodName=TK6A45DA
TK6A45DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 5.5A TO220SIS
Produkt ist nicht verfügbar
TK6A50D(STA4,Q,M) docget.jsp?did=1082&prodName=TK6A50D
TK6A50D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 6A TO220SIS
Produkt ist nicht verfügbar
TK6A53D(STA4,Q,M) docget.jsp?did=703&prodName=TK6A53D
TK6A53D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 6A TO220SIS
Produkt ist nicht verfügbar
TK6A55DA(STA4,Q,M) docget.jsp?did=927&prodName=TK6A55DA
TK6A55DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 5.5A TO220SIS
Produkt ist nicht verfügbar
TK7A45DA(STA4,Q,M) docget.jsp?did=4484&prodName=TK7A45DA
TK7A45DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 6.5A TO-220SIS
Produkt ist nicht verfügbar
TK7A50D(STA4,Q,M) docget.jsp?did=21793&prodName=TK7A50D
TK7A50D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 7A TO220SIS
Produkt ist nicht verfügbar
TK7A55D(STA4,Q,M) docget.jsp?did=2384&prodName=TK7A55D
TK7A55D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 7A TO-220SIS
Produkt ist nicht verfügbar
TK7A65D(STA4,Q,M) TK7A65D_datasheet_en_20131101.pdf?did=2386&prodName=TK7A65D
TK7A65D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.04 EUR
10+ 4.19 EUR
Mindestbestellmenge: 6
TK80S04K3L(T6L1,NQ
TK80S04K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 10 V
Produkt ist nicht verfügbar
TK80S06K3L(T6L1,NQ docget.jsp?did=10574&prodName=TK80S06K3L
TK80S06K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 80A DPAK
Produkt ist nicht verfügbar
TK8A45DA(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK8A45DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 7.5A TO-220SIS
Produkt ist nicht verfügbar
TK8A45D(STA4,Q,M) docget.jsp?did=6102&prodName=TK8A45D
TK8A45D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 8A TO220SIS
Produkt ist nicht verfügbar
TK8A50DA(STA4,Q,M)
TK8A50DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 7.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.04Ohm @ 3.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 33 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.69 EUR
Mindestbestellmenge: 8
TK8A55DA(STA4,Q,M) TK8A55DA_datasheet_en_20131101.pdf?did=2380&prodName=TK8A55DA
TK8A55DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 7.5A TO220SIS
Produkt ist nicht verfügbar
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