Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13584) > Seite 34 nach 227
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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TPC8221-H,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 6A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPC8223-H,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 9A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPC8407,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 9A/7.4A 8SOPPart Status: Obsolete Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.3V @ 100µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A Drain to Source Voltage (Vdss): 30V Power - Max: 450mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPC8A05-H(TE12L,QM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 10A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP (5.5x6.0) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 1W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPC8A06-H(TE12LQM) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 12A 8SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPCA8055-H,LQ(M | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 56A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 1.6W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPCA8056-H,LQ(M | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 48A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 1.6W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPCA8057-H,LQ(M | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 42A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 500µA Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPCA8062-H,LQ(CM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 28A 8SOPDrive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 300µA Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPCA8064-H,LQ(CM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 20A 8SOPPackaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 2.3V @ 200µA Power Dissipation (Max): 1.6W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Package / Case: 8-PowerVDFN Supplier Device Package: 8-SOP Advance (5x5) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPCA8065-H,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 16A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 200µA Power Dissipation (Max): 1.6W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPCA8120,LQ(CM | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 45A 8SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPCA8128,LQ(CM | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 34A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2V @ 500µA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TPCC8007(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 27A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TPCC8008(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 25A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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TPCC8009,LQ(O | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 24A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 3V @ 200µA Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TPCC8061-H,LQ(O | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 8A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TPCC8061-H,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 8A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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TPCC8065-H,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 13A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.4mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.3V @ 200µA Power Dissipation (Max): 700mW (Ta), 18W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPCC8066-H,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 11A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.3V @ 100µA Power Dissipation (Max): 700mW (Ta), 17W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPCC8067-H,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 9A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 690 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.3V @ 100µA Power Dissipation (Max): 700mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TPCC8073,LQ(O | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 27A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TPCC8074,LQ(O | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 20A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TPCC8076,LQ(O | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 33V 27A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TPCC8084,LQ(O | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 33V 21A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TPCC8103(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 18A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TPCC8104,LQ(O | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 20A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TPCC8105,LQ(O | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 23A 8TSON-ADV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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TPCF8305,LF(J | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A VS8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TPCL4201(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 4CHIPLGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TPCL4202(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 4CHIPLGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TPCL4203(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 4CHIPLGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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TTA0001(Q,T) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 160V 18A TO-3PN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TTC0001(Q,T) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 160V 18A TO-3PN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TTC0002(Q) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 160V 18A TO-3PPower - Max: 180 W Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 18 A Part Status: Active Supplier Device Package: TO-3P(L) Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-3PL Packaging: Bulk |
auf Bestellung 164 Stücke: Lieferzeit 10-14 Tag (e) |
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TTC008(Q) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 285V 1.5A PW-MOLD2Power - Max: 1.1 W Voltage - Collector Emitter Breakdown (Max): 285 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: PW-MOLD2 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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TTC012(Q) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 375V 2A PW-MOLD2Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk Power - Max: 1.1 W Voltage - Collector Emitter Breakdown (Max): 375 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: PW-MOLD2 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TC62D722CFNG(EL,H) | Toshiba Semiconductor and Storage |
Description: IC LED DRVR CONST CURR 24-HTSSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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TC62D748CFNAG,C,EB | Toshiba Semiconductor and Storage |
Description: IC LED DRIVER LINEAR 90MA 24SSOP Packaging: Tape & Reel (TR) Package / Case: 24-SSOP (0.154", 3.90mm Width) Voltage - Output: 17V Mounting Type: Surface Mount Number of Outputs: 16 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Current - Output / Channel: 90mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-SSOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TC62D722CFNG(EL,H) | Toshiba Semiconductor and Storage |
Description: IC LED DRVR CONST CURR 24-HTSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TC62D722CFNG(EL,H) | Toshiba Semiconductor and Storage |
Description: IC LED DRVR CONST CURR 24-HTSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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TC62D748CFNAG,C,EB | Toshiba Semiconductor and Storage |
Description: IC LED DRIVER LINEAR 90MA 24SSOP Packaging: Cut Tape (CT) Package / Case: 24-SSOP (0.154", 3.90mm Width) Voltage - Output: 17V Mounting Type: Surface Mount Number of Outputs: 16 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Current - Output / Channel: 90mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-SSOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TC74HC374AF(EL,F) | Toshiba Semiconductor and Storage |
Description: IC D-TYPE POS TRG SNGL 20SOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TLP785(BL,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPVce Saturation (Max): 400mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA |
auf Bestellung 1760 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP785(F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPart Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 |
auf Bestellung 456 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP785(GB,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TLP785(GR,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TLP785(GRH-TP6,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP785(GR-TP6,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP785(TP6,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP785(Y,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP754(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV OPEN COLLECTOR 8DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TLP701A(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SDIP Packaging: Tube Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 350ns Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TLP701H(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SDIP Packaging: Tube Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): 500ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TLP559(IGM,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 2.5KV 1CH TRANS 8-DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 25% @ 10mA Current Transfer Ratio (Max): 75% @ 10mA Supplier Device Package: 8-DIP Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 450ns Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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TLP555(F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 2.5KV TRI-STATE 8-DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Tri-State Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 20V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 10mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 35ns, 20ns Common Mode Transient Immunity (Min): 1kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Part Status: Obsolete Number of Channels: 1 Current - Output / Channel: 40 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TLP785(GRH-TP6,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 3614 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP785(GR-TP6,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 7079 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP785(TP6,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 7561 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP185(E) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH TRANS 6-SOPPackaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 9µs, 9µs Rise / Fall Time (Typ): 5µs, 9µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TPC8221-H,LQ(S |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPC8223-H,LQ(S |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPC8407,LQ(S |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 9A/7.4A 8SOP
Part Status: Obsolete
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.3V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 30V 9A/7.4A 8SOP
Part Status: Obsolete
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.3V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPC8A05-H(TE12L,QM |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPC8A06-H(TE12LQM) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 12A 8SOP
Description: MOSFET N-CH 30V 12A 8SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8055-H,LQ(M |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 56A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 56A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8056-H,LQ(M |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 48A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 48A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8057-H,LQ(M |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 42A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 42A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8062-H,LQ(CM |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 28A 8SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Description: MOSFET N-CH 30V 28A 8SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8064-H,LQ(CM |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)
Description: MOSFET N-CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8065-H,LQ(S |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 16A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 16A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8120,LQ(CM |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 45A 8SOP
Description: MOSFET P-CH 30V 45A 8SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCA8128,LQ(CM |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCC8007(TE12L,Q) |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 27A 8TSON-ADV
Description: MOSFET N-CH 20V 27A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| TPCC8008(TE12L,Q) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 25A 8TSON-ADV
Description: MOSFET N-CH 30V 25A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| TPCC8009,LQ(O |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 24A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 3V @ 200µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 24A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 3V @ 200µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCC8061-H,LQ(O |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 8A 8TSON-ADV
Description: MOSFET N-CH 30V 8A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| TPCC8061-H,LQ(S |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 8A 8TSON-ADV
Description: MOSFET N-CH 30V 8A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TPCC8065-H,LQ(S |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Description: MOSFET N-CH 30V 13A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCC8066-H,LQ(S |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Power Dissipation (Max): 700mW (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 11A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Power Dissipation (Max): 700mW (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCC8067-H,LQ(S |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Power Dissipation (Max): 700mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 9A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Power Dissipation (Max): 700mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPCC8073,LQ(O |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 27A 8TSON-ADV
Description: MOSFET N-CH 30V 27A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| TPCC8074,LQ(O |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8TSON-ADV
Description: MOSFET N-CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| TPCC8076,LQ(O |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 33V 27A 8TSON-ADV
Description: MOSFET N-CH 33V 27A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| TPCC8084,LQ(O |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 33V 21A 8TSON-ADV
Description: MOSFET N-CH 33V 21A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| TPCC8103(TE12L,Q) |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A 8TSON-ADV
Description: MOSFET P-CH 30V 18A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| TPCC8104,LQ(O |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 20A 8TSON-ADV
Description: MOSFET P-CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| TPCC8105,LQ(O |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 23A 8TSON-ADV
Description: MOSFET P-CH 30V 23A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| TPCF8305,LF(J |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A VS8
Description: MOSFET 2P-CH 20V 4A VS8
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| TPCL4201(TE85L,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 4CHIPLGA
Description: MOSFET 2N-CH 4CHIPLGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| TPCL4202(TE85L,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 4CHIPLGA
Description: MOSFET 2N-CH 4CHIPLGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| TPCL4203(TE85L,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 4CHIPLGA
Description: MOSFET 2N-CH 4CHIPLGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| TTA0001(Q,T) |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 18A TO-3PN
Description: TRANS PNP 160V 18A TO-3PN
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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Stück im Wert von UAH
| TTC0001(Q,T) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 160V 18A TO-3PN
Description: TRANS NPN 160V 18A TO-3PN
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| TTC0002(Q) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 160V 18A TO-3P
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Supplier Device Package: TO-3P(L)
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Bulk
Description: TRANS NPN 160V 18A TO-3P
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Supplier Device Package: TO-3P(L)
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Bulk
auf Bestellung 164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.52 EUR |
| 10+ | 5.62 EUR |
| 100+ | 3.96 EUR |
| TTC008(Q) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 285V 1.5A PW-MOLD2
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 285 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: PW-MOLD2
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Description: TRANS NPN 285V 1.5A PW-MOLD2
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 285 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: PW-MOLD2
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 14+ | 1.52 EUR |
| 100+ | 1.17 EUR |
| TTC012(Q) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 375V 2A PW-MOLD2
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 375 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: PW-MOLD2
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Description: TRANS NPN 375V 2A PW-MOLD2
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 375 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: PW-MOLD2
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC62D722CFNG(EL,H) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR CONST CURR 24-HTSSOP
Description: IC LED DRVR CONST CURR 24-HTSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TC62D748CFNAG,C,EB |
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 90MA 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRIVER LINEAR 90MA 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TC62D722CFNG(EL,H) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR CONST CURR 24-HTSSOP
Description: IC LED DRVR CONST CURR 24-HTSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC62D722CFNG(EL,H) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR CONST CURR 24-HTSSOP
Description: IC LED DRVR CONST CURR 24-HTSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC62D748CFNAG,C,EB |
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 90MA 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRIVER LINEAR 90MA 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC74HC374AF(EL,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE POS TRG SNGL 20SOP
Description: IC D-TYPE POS TRG SNGL 20SOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLP785(BL,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
auf Bestellung 1760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.76 EUR |
| 18+ | 1.23 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.71 EUR |
| TLP785(F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 30+ | 0.71 EUR |
| 100+ | 0.51 EUR |
| TLP785(GB,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP785(GR,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP785(GRH-TP6,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.37 EUR |
| TLP785(GR-TP6,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.38 EUR |
| 4000+ | 0.36 EUR |
| 6000+ | 0.35 EUR |
| TLP785(TP6,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.37 EUR |
| 4000+ | 0.35 EUR |
| 6000+ | 0.33 EUR |
| TLP785(Y,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 30+ | 0.71 EUR |
| TLP754(F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV OPEN COLLECTOR 8DIP
Description: OPTOISO 5KV OPEN COLLECTOR 8DIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP701A(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SDIP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SDIP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP701H(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SDIP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SDIP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLP559(IGM,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 25% @ 10mA
Current Transfer Ratio (Max): 75% @ 10mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 450ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISOLTR 2.5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 25% @ 10mA
Current Transfer Ratio (Max): 75% @ 10mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 450ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| TLP555(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV TRI-STATE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 35ns, 20ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 40 mA
Description: OPTOISOLTR 2.5KV TRI-STATE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 35ns, 20ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 40 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP785(GRH-TP6,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 3614 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 30+ | 0.71 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| TLP785(GR-TP6,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 7079 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.07 EUR |
| 29+ | 0.73 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.4 EUR |
| TLP785(TP6,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 7561 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 30+ | 0.71 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| TLP185(E) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 9µs, 9µs
Rise / Fall Time (Typ): 5µs, 9µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 9µs, 9µs
Rise / Fall Time (Typ): 5µs, 9µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




















