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TK8A55DA(STA4,Q,M) TK8A55DA(STA4,Q,M) Toshiba Semiconductor and Storage TK8A55DA_datasheet_en_20131101.pdf?did=2380&prodName=TK8A55DA Description: MOSFET N-CH 550V 7.5A TO220SIS
Produkt ist nicht verfügbar
TK8A60DA(STA4,Q,M) TK8A60DA(STA4,Q,M) Toshiba Semiconductor and Storage Description: MOSFET N-CH 600V 7.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
TK9A45D(STA4,Q,M) TK9A45D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=4465&prodName=TK9A45D Description: MOSFET N-CH 450V 9A TO-220SIS
Produkt ist nicht verfügbar
TK9A55DA(STA4,Q,M) TK9A55DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK9A55DA Description: MOSFET N-CH 550V 8.5A TO-220SIS
Produkt ist nicht verfügbar
TK9A60D(STA4,Q,M) TK9A60D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=829&prodName=TK9A60D Description: MOSFET N-CH 600V 9A TO-220SIS
Produkt ist nicht verfügbar
TPC6008-H(TE85L,FM Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC6008-H Description: MOSFET N-CH 30V 5.9A VS6
Produkt ist nicht verfügbar
TPC6009-H(TE85L,FM Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC6009-H Description: MOSFET N-CH 40V 5.3A VS6
Produkt ist nicht verfügbar
TPC6010-H(TE85L,FM TPC6010-H(TE85L,FM Toshiba Semiconductor and Storage docget.jsp?did=6418&prodName=TPC6010-H Description: MOSFET N-CH 60V 6.1A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Produkt ist nicht verfügbar
TPC6011(TE85L,F,M) TPC6011(TE85L,F,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 6A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
TPC6012(TE85L,F,M) TPC6012(TE85L,F,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 20V 6A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Produkt ist nicht verfügbar
TPC6110(TE85L,F,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC6110 Description: MOSFET P-CH 30V 4.5A VS6
Produkt ist nicht verfügbar
TPC6113(TE85L,F,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC6113 Description: MOSFET P-CH 20V 5A VS6
Produkt ist nicht verfügbar
TPC8062-H,LQ(CM TPC8062-H,LQ(CM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
TPC8065-H,LQ(S TPC8065-H,LQ(S Toshiba Semiconductor and Storage TPC8065-H_datasheet_en_20140214.pdf?did=6304&prodName=TPC8065-H Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 6.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Produkt ist nicht verfügbar
TPC8066-H,LQ(S TPC8066-H,LQ(S Toshiba Semiconductor and Storage TPC8066-H_datasheet_en_20140214.pdf?did=6310&prodName=TPC8066-H Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Produkt ist nicht verfügbar
TPC8067-H,LQ(S TPC8067-H,LQ(S Toshiba Semiconductor and Storage TPC8067-H_datasheet_en_20140214.pdf?did=6088&prodName=TPC8067-H Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 10 V
Produkt ist nicht verfügbar
TPC8092,LQ(S TPC8092,LQ(S Toshiba Semiconductor and Storage TPC8092.pdf Description: MOSFET N-CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Produkt ist nicht verfügbar
TPC8120(TE12L,Q,M) TPC8120(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8120 Description: MOSFET P-CH 30V 18A 8SOP
Produkt ist nicht verfügbar
TPC8123(TE12L,Q,M) TPC8123(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8123 Description: MOSFET P-CH 30V 11A 8SOP
Produkt ist nicht verfügbar
TPC8124(TE12L,Q,M) TPC8124(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8124 Description: MOSFET P-CH 40V 12A 8SOP
Produkt ist nicht verfügbar
TPC8126,LQ(CM TPC8126,LQ(CM Toshiba Semiconductor and Storage docget.jsp?did=1900&prodName=TPC8126 Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
Produkt ist nicht verfügbar
TPC8127,LQ(M TPC8127,LQ(M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8127 Description: MOSFET P-CH 30V 13A 8SOP
Produkt ist nicht verfügbar
TPC8128(TE12L,Q,M) TPC8128(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8128 Description: MOSFET P-CH 30V 16A 8SOP
Produkt ist nicht verfügbar
TPC8221-H,LQ(S TPC8221-H,LQ(S Toshiba Semiconductor and Storage TPC8221-H.pdf Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
TPC8223-H,LQ(S TPC8223-H,LQ(S Toshiba Semiconductor and Storage TPC8223-H_datasheet_en_20140227.pdf?did=6598&prodName=TPC8223-H Description: MOSFET 2N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
TPC8407,LQ(S TPC8407,LQ(S Toshiba Semiconductor and Storage TPC8407_datasheet_en_20140107.pdf?did=7369&prodName=TPC8407 Description: MOSFET N/P-CH 30V 9A/7.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
TPC8A05-H(TE12L,QM TPC8A05-H(TE12L,QM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Produkt ist nicht verfügbar
TPC8A06-H(TE12LQM) TPC8A06-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 12A 8SOP
Produkt ist nicht verfügbar
TPCA8055-H,LQ(M TPCA8055-H,LQ(M Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 56A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Power Dissipation (Max): 1.6W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8056-H,LQ(M TPCA8056-H,LQ(M Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 24A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8057-H,LQ(M TPCA8057-H,LQ(M Toshiba Semiconductor and Storage TPCA8057-H_datasheet_en_20140304.pdf?did=2576&prodName=TPCA8057-H Description: MOSFET N-CH 30V 42A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8062-H,LQ(CM TPCA8062-H,LQ(CM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8064-H,LQ(CM TPCA8064-H,LQ(CM Toshiba Semiconductor and Storage docget.jsp?did=2519&prodName=TPCA8064-H Description: MOSFET N-CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8065-H,LQ(S TPCA8065-H,LQ(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 10V
Power Dissipation (Max): 1.6W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8120,LQ(CM TPCA8120,LQ(CM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 30V 45A 8SOP
Produkt ist nicht verfügbar
TPCA8128,LQ(CM TPCA8128,LQ(CM Toshiba Semiconductor and Storage docget.jsp?did=2182&prodName=TPCA8128 Description: MOSFET P-CH 30V 34A 8SOP
Produkt ist nicht verfügbar
TPCC8007(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8007 Description: MOSFET N-CH 20V 27A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8008(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=466&prodName=TPCC8008 Description: MOSFET N-CH 30V 25A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8009,LQ(O Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 24A 8TSON
Produkt ist nicht verfügbar
TPCC8061-H,LQ(O Toshiba Semiconductor and Storage docget.jsp?did=3499&prodName=TPCC8061-H Description: MOSFET N-CH 30V 8A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8061-H,LQ(S Toshiba Semiconductor and Storage docget.jsp?did=3499&prodName=TPCC8061-H Description: MOSFET N-CH 30V 8A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8065-H,LQ(S TPCC8065-H,LQ(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 13A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 6.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Produkt ist nicht verfügbar
TPCC8066-H,LQ(S TPCC8066-H,LQ(S Toshiba Semiconductor and Storage docget.jsp?did=6792&prodName=TPCC8066-H Description: MOSFET N-CH 30V 11A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Produkt ist nicht verfügbar
TPCC8067-H,LQ(S Toshiba Semiconductor and Storage docget.jsp?did=6789&prodName=TPCC8067-H Description: MOSFET N-CH 30V 9A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8073,LQ(O Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8073 Description: MOSFET N-CH 30V 27A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8074,LQ(O Toshiba Semiconductor and Storage docget.jsp?did=2560&prodName=TPCC8074 Description: MOSFET N-CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8076,LQ(O Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8076 Description: MOSFET N-CH 33V 27A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8084,LQ(O Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8084 Description: MOSFET N-CH 33V 21A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8103(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8103 Description: MOSFET P-CH 30V 18A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8104,LQ(O Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8104 Description: MOSFET P-CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8105,LQ(O Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8105 Description: MOSFET P-CH 30V 23A 8TSON-ADV
Produkt ist nicht verfügbar
TPCF8305,LF(J TPCF8305,LF(J Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCF8305 Description: MOSFET 2P-CH 20V 4A VS8
Produkt ist nicht verfügbar
TPCL4201(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCL4201 Description: MOSFET 2N-CH 4CHIPLGA
Produkt ist nicht verfügbar
TPCL4202(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCL4202 Description: MOSFET 2N-CH 4CHIPLGA
Produkt ist nicht verfügbar
TPCL4203(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCL4203 Description: MOSFET 2N-CH 4CHIPLGA
Produkt ist nicht verfügbar
TTA0001(Q,T) TTA0001(Q,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TTA0001 Description: TRANS PNP 160V 18A TO-3PN
Produkt ist nicht verfügbar
TTA0002(Q) TTA0002(Q) Toshiba Semiconductor and Storage TTA0002_datasheet_en_20131101.pdf?did=500&prodName=TTA0002 Description: TRANS PNP 160V 18A TO3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 180 W
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.93 EUR
10+ 6.67 EUR
Mindestbestellmenge: 4
TTC0001(Q,T) TTC0001(Q,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TTC0001 Description: TRANS NPN 160V 18A TO-3PN
Produkt ist nicht verfügbar
TTC0002(Q) TTC0002(Q) Toshiba Semiconductor and Storage TTC0002_datasheet_en_20131101.pdf?did=510&prodName=TTC0002 Description: TRANS NPN 160V 18A TO3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 180 W
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.85 EUR
10+ 6.6 EUR
Mindestbestellmenge: 4
TTC008(Q) TTC008(Q) Toshiba Semiconductor and Storage TTC008_datasheet_en_20140403.pdf?did=5992&prodName=TTC008 Description: TRANS NPN 285V 1.5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: PW-MOLD2
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 285 V
Power - Max: 1.1 W
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.16 EUR
14+ 1.89 EUR
100+ 1.45 EUR
Mindestbestellmenge: 13
TK8A55DA(STA4,Q,M) TK8A55DA_datasheet_en_20131101.pdf?did=2380&prodName=TK8A55DA
TK8A55DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 7.5A TO220SIS
Produkt ist nicht verfügbar
TK8A60DA(STA4,Q,M)
TK8A60DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
TK9A45D(STA4,Q,M) docget.jsp?did=4465&prodName=TK9A45D
TK9A45D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 9A TO-220SIS
Produkt ist nicht verfügbar
TK9A55DA(STA4,Q,M) docget.jsp?type=datasheet&lang=en&pid=TK9A55DA
TK9A55DA(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 8.5A TO-220SIS
Produkt ist nicht verfügbar
TK9A60D(STA4,Q,M) docget.jsp?did=829&prodName=TK9A60D
TK9A60D(STA4,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9A TO-220SIS
Produkt ist nicht verfügbar
TPC6008-H(TE85L,FM docget.jsp?type=datasheet&lang=en&pid=TPC6008-H
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 5.9A VS6
Produkt ist nicht verfügbar
TPC6009-H(TE85L,FM docget.jsp?type=datasheet&lang=en&pid=TPC6009-H
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 5.3A VS6
Produkt ist nicht verfügbar
TPC6010-H(TE85L,FM docget.jsp?did=6418&prodName=TPC6010-H
TPC6010-H(TE85L,FM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6.1A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Produkt ist nicht verfügbar
TPC6011(TE85L,F,M) Mosfets_Prod_Guide.pdf
TPC6011(TE85L,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
TPC6012(TE85L,F,M) Mosfets_Prod_Guide.pdf
TPC6012(TE85L,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 6A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Produkt ist nicht verfügbar
TPC6110(TE85L,F,M) docget.jsp?type=datasheet&lang=en&pid=TPC6110
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 4.5A VS6
Produkt ist nicht verfügbar
TPC6113(TE85L,F,M) docget.jsp?type=datasheet&lang=en&pid=TPC6113
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A VS6
Produkt ist nicht verfügbar
TPC8062-H,LQ(CM Mosfets_Prod_Guide.pdf
TPC8062-H,LQ(CM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
TPC8065-H,LQ(S TPC8065-H_datasheet_en_20140214.pdf?did=6304&prodName=TPC8065-H
TPC8065-H,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 6.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Produkt ist nicht verfügbar
TPC8066-H,LQ(S TPC8066-H_datasheet_en_20140214.pdf?did=6310&prodName=TPC8066-H
TPC8066-H,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Produkt ist nicht verfügbar
TPC8067-H,LQ(S TPC8067-H_datasheet_en_20140214.pdf?did=6088&prodName=TPC8067-H
TPC8067-H,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 10 V
Produkt ist nicht verfügbar
TPC8092,LQ(S TPC8092.pdf
TPC8092,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Produkt ist nicht verfügbar
TPC8120(TE12L,Q,M) docget.jsp?type=datasheet&lang=en&pid=TPC8120
TPC8120(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A 8SOP
Produkt ist nicht verfügbar
TPC8123(TE12L,Q,M) docget.jsp?type=datasheet&lang=en&pid=TPC8123
TPC8123(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 11A 8SOP
Produkt ist nicht verfügbar
TPC8124(TE12L,Q,M) docget.jsp?type=datasheet&lang=en&pid=TPC8124
TPC8124(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 12A 8SOP
Produkt ist nicht verfügbar
TPC8126,LQ(CM docget.jsp?did=1900&prodName=TPC8126
TPC8126,LQ(CM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
Produkt ist nicht verfügbar
TPC8127,LQ(M docget.jsp?type=datasheet&lang=en&pid=TPC8127
TPC8127,LQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 13A 8SOP
Produkt ist nicht verfügbar
TPC8128(TE12L,Q,M) docget.jsp?type=datasheet&lang=en&pid=TPC8128
TPC8128(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 16A 8SOP
Produkt ist nicht verfügbar
TPC8221-H,LQ(S TPC8221-H.pdf
TPC8221-H,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
TPC8223-H,LQ(S TPC8223-H_datasheet_en_20140227.pdf?did=6598&prodName=TPC8223-H
TPC8223-H,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
TPC8407,LQ(S TPC8407_datasheet_en_20140107.pdf?did=7369&prodName=TPC8407
TPC8407,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 9A/7.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
TPC8A05-H(TE12L,QM Mosfets_Prod_Guide.pdf
TPC8A05-H(TE12L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Produkt ist nicht verfügbar
TPC8A06-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8A06-H(TE12LQM)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 12A 8SOP
Produkt ist nicht verfügbar
TPCA8055-H,LQ(M Mosfets_Prod_Guide.pdf
TPCA8055-H,LQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 56A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Power Dissipation (Max): 1.6W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8056-H,LQ(M Mosfets_Prod_Guide.pdf
TPCA8056-H,LQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 24A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8057-H,LQ(M TPCA8057-H_datasheet_en_20140304.pdf?did=2576&prodName=TPCA8057-H
TPCA8057-H,LQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 42A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8062-H,LQ(CM Mosfets_Prod_Guide.pdf
TPCA8062-H,LQ(CM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8064-H,LQ(CM docget.jsp?did=2519&prodName=TPCA8064-H
TPCA8064-H,LQ(CM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8065-H,LQ(S Mosfets_Prod_Guide.pdf
TPCA8065-H,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 10V
Power Dissipation (Max): 1.6W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8120,LQ(CM Mosfets_Prod_Guide.pdf
TPCA8120,LQ(CM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 45A 8SOP
Produkt ist nicht verfügbar
TPCA8128,LQ(CM docget.jsp?did=2182&prodName=TPCA8128
TPCA8128,LQ(CM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 34A 8SOP
Produkt ist nicht verfügbar
TPCC8007(TE12L,Q) docget.jsp?type=datasheet&lang=en&pid=TPCC8007
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 27A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8008(TE12L,Q) docget.jsp?did=466&prodName=TPCC8008
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 25A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8009,LQ(O Mosfets_Prod_Guide.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 24A 8TSON
Produkt ist nicht verfügbar
TPCC8061-H,LQ(O docget.jsp?did=3499&prodName=TPCC8061-H
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 8A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8061-H,LQ(S docget.jsp?did=3499&prodName=TPCC8061-H
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 8A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8065-H,LQ(S Mosfets_Prod_Guide.pdf
TPCC8065-H,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 6.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Produkt ist nicht verfügbar
TPCC8066-H,LQ(S docget.jsp?did=6792&prodName=TPCC8066-H
TPCC8066-H,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Produkt ist nicht verfügbar
TPCC8067-H,LQ(S docget.jsp?did=6789&prodName=TPCC8067-H
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8073,LQ(O docget.jsp?type=datasheet&lang=en&pid=TPCC8073
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 27A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8074,LQ(O docget.jsp?did=2560&prodName=TPCC8074
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8076,LQ(O docget.jsp?type=datasheet&lang=en&pid=TPCC8076
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 33V 27A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8084,LQ(O docget.jsp?type=datasheet&lang=en&pid=TPCC8084
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 33V 21A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8103(TE12L,Q) docget.jsp?type=datasheet&lang=en&pid=TPCC8103
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8104,LQ(O docget.jsp?type=datasheet&lang=en&pid=TPCC8104
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
TPCC8105,LQ(O docget.jsp?type=datasheet&lang=en&pid=TPCC8105
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 23A 8TSON-ADV
Produkt ist nicht verfügbar
TPCF8305,LF(J docget.jsp?type=datasheet&lang=en&pid=TPCF8305
TPCF8305,LF(J
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A VS8
Produkt ist nicht verfügbar
TPCL4201(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=TPCL4201
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 4CHIPLGA
Produkt ist nicht verfügbar
TPCL4202(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=TPCL4202
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 4CHIPLGA
Produkt ist nicht verfügbar
TPCL4203(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=TPCL4203
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 4CHIPLGA
Produkt ist nicht verfügbar
TTA0001(Q,T) docget.jsp?type=datasheet&lang=en&pid=TTA0001
TTA0001(Q,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 18A TO-3PN
Produkt ist nicht verfügbar
TTA0002(Q) TTA0002_datasheet_en_20131101.pdf?did=500&prodName=TTA0002
TTA0002(Q)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 18A TO3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 180 W
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.93 EUR
10+ 6.67 EUR
Mindestbestellmenge: 4
TTC0001(Q,T) docget.jsp?type=datasheet&lang=en&pid=TTC0001
TTC0001(Q,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 160V 18A TO-3PN
Produkt ist nicht verfügbar
TTC0002(Q) TTC0002_datasheet_en_20131101.pdf?did=510&prodName=TTC0002
TTC0002(Q)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 160V 18A TO3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 180 W
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.85 EUR
10+ 6.6 EUR
Mindestbestellmenge: 4
TTC008(Q) TTC008_datasheet_en_20140403.pdf?did=5992&prodName=TTC008
TTC008(Q)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 285V 1.5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: PW-MOLD2
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 285 V
Power - Max: 1.1 W
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
14+ 1.89 EUR
100+ 1.45 EUR
Mindestbestellmenge: 13
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