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TLP620M(BL-TP1,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620M(GB-TP5,E TLP620M(GB-TP5,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620M(D4Y-T5,E TLP620M(D4Y-T5,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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RN1410,LF RN1410,LF Toshiba Semiconductor and Storage docget.jsp?did=18792&prodName=RN1410 Description: TRANS PREBIAS NPN 50V SMINI
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.063 EUR
6000+0.057 EUR
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RN1410,LF RN1410,LF Toshiba Semiconductor and Storage docget.jsp?did=18792&prodName=RN1410 Description: TRANS PREBIAS NPN 50V SMINI
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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67+0.31 EUR
107+0.2 EUR
173+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
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TLP2370(E TLP2370(E Toshiba Semiconductor and Storage TLP2370_datasheet_en_20170609.pdf?did=30500&prodName=TLP2370 Description: HIGH SPEED PHOTOCOUPLER; 5PIN SO
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 3ns, 2ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 125 Stücke:
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6+3.61 EUR
10+2.31 EUR
125+1.59 EUR
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RN1417,LF RN1417,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.06 EUR
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RN1417,LF RN1417,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 4070 Stücke:
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72+0.3 EUR
113+0.19 EUR
183+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
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RN1414,LF RN1414,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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3000+0.063 EUR
6000+0.057 EUR
9000+0.054 EUR
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RN1414,LF RN1414,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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67+0.31 EUR
107+0.2 EUR
173+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
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RN1404,LF RN1404,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1404,LF RN1404,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2413 Stücke:
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56+0.38 EUR
92+0.23 EUR
149+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
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RN1415,LF RN1415,LF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.06 EUR
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RN1415,LF RN1415,LF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5406 Stücke:
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67+0.31 EUR
110+0.19 EUR
178+0.12 EUR
500+0.086 EUR
1000+0.075 EUR
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TLP3555A(LF1,F TLP3555A(LF1,F Toshiba Semiconductor and Storage docget.jsp?did=61844&prodName=TLP3555A Description: SSR RELAY SPST-NO 2.5A 0-40V
On-State Resistance (Max): 100 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 4-SMD
Approval Agency: CSA, cUL, UL, VDE
Load Current: 3 A
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.64VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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TTB1020B,S4X(S Toshiba Semiconductor and Storage TTB1020B_datasheet_en_20200129.pdf?did=13851&prodName=TTB1020B Description: TRANSISTOR PNP TO220
Packaging: Tube
Produkt ist nicht verfügbar
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TB62218AFTG,C8,EL TB62218AFTG,C8,EL Toshiba Semiconductor and Storage TB62218AFTG_datasheet_en_20120312.pdf?did=13039&prodName=TB62218AFTG Description: IC MTRDRV BIPLR 4.75-5.25V 48QFN
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 48-QFN (7x7)
Voltage - Load: 10V ~ 38V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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10+4.93 EUR
25+4.2 EUR
100+3.39 EUR
250+3 EUR
500+2.75 EUR
1000+2.55 EUR
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TCR3LM18A,RF Toshiba Semiconductor and Storage docget.jsp?did=151501&prodName=TCR3LM33A Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.445V @ 200mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2.2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TCR3LM18A,RF Toshiba Semiconductor and Storage docget.jsp?did=151501&prodName=TCR3LM33A Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.445V @ 200mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2.2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
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31+0.69 EUR
38+0.57 EUR
100+0.43 EUR
250+0.36 EUR
500+0.32 EUR
1000+0.29 EUR
2500+0.24 EUR
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TCR3LM33A,RF Toshiba Semiconductor and Storage docget.jsp?did=151501&prodName=TCR3LM33A Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.251V @ 200mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2.2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TCR3LM33A,RF Toshiba Semiconductor and Storage docget.jsp?did=151501&prodName=TCR3LM33A Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.251V @ 200mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2.2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
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18+1.18 EUR
31+0.69 EUR
38+0.57 EUR
100+0.43 EUR
250+0.36 EUR
500+0.32 EUR
1000+0.29 EUR
2500+0.24 EUR
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TC74HC4049AF(EL,F) TC74HC4049AF(EL,F) Toshiba Semiconductor and Storage docget.jsp?did=70208&prodName=TC74HC4049AF Description: IC BUFFER INVERTING 6V 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOP
Produkt ist nicht verfügbar
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HN4A06J(TE85L,F) HN4A06J(TE85L,F) Toshiba Semiconductor and Storage HN4A06J.pdf Description: TRANS 2PNP 120V 100MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
Produkt ist nicht verfügbar
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HN4C06J-BL(TE85L,F HN4C06J-BL(TE85L,F Toshiba Semiconductor and Storage Description: TRANS 2NPN 120V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
Produkt ist nicht verfügbar
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TLP241BP(D4TP5,E TLP241BP(D4TP5,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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TLP241BP(TP1,E TLP241BP(TP1,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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TLP241BP(TP5,E TLP241BP(TP5,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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TLP241BPF(TP4,E TLP241BPF(TP4,E Toshiba Semiconductor and Storage TLP241BP_datasheet_en_20231012.pdf?did=154225&prodName=TLP241BP Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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TLP241BPF(D4TP4E TLP241BPF(D4TP4E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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TLP241BP(LF1,E TLP241BP(LF1,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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TLP241BP(LF5,E TLP241BP(LF5,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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TLP241BP(D4LF5,E TLP241BP(D4LF5,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-SMD
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Surface Mount
Output Type: DC
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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TLP241BPF(D4LF4E TLP241BPF(D4LF4E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-SMD
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Surface Mount
Output Type: DC
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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TLP241BP(D4LF1,E TLP241BP(D4LF1,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tube
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-SMD
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Surface Mount
Output Type: DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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TLP241BPF(D4,E TLP241BPF(D4,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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TLP241BP(E TLP241BP(E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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TLP241BPF(E TLP241BPF(E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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TLP241BPF(LF4,E TLP241BPF(LF4,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-SMD
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Surface Mount
Output Type: DC
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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TLP785(D4-GRH,F Toshiba Semiconductor and Storage TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785 Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H620FNG TC78H620FNG Toshiba Semiconductor and Storage TC78H620FNG_datasheet_en_20161125.pdf?did=35802&prodName=TC78H620FNG Description: IC MTRDRV UNIPLR 2.7-5.5V 16SSOP
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Step Resolution: 1, 1/2
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Unipolar
Supplier Device Package: 16-SSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2409,LF RN2409,LF Toshiba Semiconductor and Storage RN2407-9.pdf Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.064 EUR
Mindestbestellmenge: 3000 Stücke
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RN2409,LF RN2409,LF Toshiba Semiconductor and Storage RN2407-9.pdf Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
106+0.2 EUR
172+0.12 EUR
500+0.089 EUR
1000+0.077 EUR
Mindestbestellmenge: 67 Stücke
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TMPM369FDFG TMPM369FDFG Toshiba Semiconductor and Storage TMPM369FDFG_datasheet_en_20230721.pdf?did=13802&prodName=TMPM369FDFG Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-FQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, Microwire, SIO, SPI, SSP, UART/USART, USB
Peripherals: DMA, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.03 EUR
10+14.93 EUR
25+13.92 EUR
200+12.17 EUR
Mindestbestellmenge: 2 Stücke
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SSM6P56FE,LM Toshiba Semiconductor and Storage Description: MOSFET 2P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TPH2R408QM,LQ TPH2R408QM,LQ Toshiba Semiconductor and Storage Description: 80V U-MOS X-H SOP-ADVANCE(N) 2.4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TPH3R008QM,LQ TPH3R008QM,LQ Toshiba Semiconductor and Storage datasheet_en_20221125.pdf?did=143627 Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
auf Bestellung 10000 Stücke:
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5000+1.04 EUR
Mindestbestellmenge: 5000 Stücke
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TPH3R008QM,LQ TPH3R008QM,LQ Toshiba Semiconductor and Storage datasheet_en_20221125.pdf?did=143627 Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
auf Bestellung 14688 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.86 EUR
10+2.45 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.26 EUR
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TPH4R008NH1,LQ TPH4R008NH1,LQ Toshiba Semiconductor and Storage Description: 80V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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RN1104MFV,L3F(CT RN1104MFV,L3F(CT Toshiba Semiconductor and Storage RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
auf Bestellung 8000 Stücke:
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8000+0.055 EUR
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RN1104MFV,L3F(CT RN1104MFV,L3F(CT Toshiba Semiconductor and Storage RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 15700 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.33 EUR
107+0.2 EUR
172+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
2000+0.069 EUR
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RN1104MFV,L3XHF(CT RN1104MFV,L3XHF(CT Toshiba Semiconductor and Storage RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.092 EUR
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RN1104MFV,L3XHF(CT RN1104MFV,L3XHF(CT Toshiba Semiconductor and Storage RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 14971 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.5 EUR
67+0.31 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 42 Stücke
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RN2104MFV,L3XHF(CT RN2104MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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RN2104MFV,L3XHF(CT RN2104MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 7725 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.32 EUR
107+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 40 Stücke
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TLP3640A(TPL,E TLP3640A(TPL,E Toshiba Semiconductor and Storage TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.57 EUR
5000+2.48 EUR
7500+2.43 EUR
Mindestbestellmenge: 2500 Stücke
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TLP3640A(TPL,E TLP3640A(TPL,E Toshiba Semiconductor and Storage TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 8469 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.14 EUR
10+3.69 EUR
25+3.52 EUR
50+3.4 EUR
100+3.28 EUR
250+3.14 EUR
500+3.02 EUR
1000+2.93 EUR
Mindestbestellmenge: 6 Stücke
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TLP3640A(V4TPL,E TLP3640A(V4TPL,E Toshiba Semiconductor and Storage TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.8 EUR
Mindestbestellmenge: 2500 Stücke
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TLP3640A(V4TPL,E TLP3640A(V4TPL,E Toshiba Semiconductor and Storage TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 4149 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.14 EUR
10+3.69 EUR
25+3.52 EUR
50+3.4 EUR
100+3.28 EUR
250+3.14 EUR
500+3.02 EUR
1000+2.93 EUR
Mindestbestellmenge: 6 Stücke
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RN1111,LXHF(CT RN1111,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18754&prodName=RN1111 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Resistors Included: R1 Only
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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RN1111,LXHF(CT RN1111,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18754&prodName=RN1111 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Resistors Included: R1 Only
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
auf Bestellung 5470 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
61+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 38 Stücke
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TLP620M(BL-TP1,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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TLP620M(GB-TP5,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(GB-TP5,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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TLP620M(D4Y-T5,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(D4Y-T5,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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RN1410,LF docget.jsp?did=18792&prodName=RN1410
RN1410,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.063 EUR
6000+0.057 EUR
Mindestbestellmenge: 3000 Stücke
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RN1410,LF docget.jsp?did=18792&prodName=RN1410
RN1410,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
107+0.2 EUR
173+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
Mindestbestellmenge: 67 Stücke
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TLP2370(E TLP2370_datasheet_en_20170609.pdf?did=30500&prodName=TLP2370
TLP2370(E
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED PHOTOCOUPLER; 5PIN SO
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 3ns, 2ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.61 EUR
10+2.31 EUR
125+1.59 EUR
Mindestbestellmenge: 6 Stücke
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RN1417,LF docget.jsp?did=18796&prodName=RN1415
RN1417,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.06 EUR
Mindestbestellmenge: 3000 Stücke
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RN1417,LF docget.jsp?did=18796&prodName=RN1415
RN1417,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 4070 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
113+0.19 EUR
183+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
Mindestbestellmenge: 72 Stücke
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RN1414,LF docget.jsp?did=18796&prodName=RN1415
RN1414,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.063 EUR
6000+0.057 EUR
9000+0.054 EUR
Mindestbestellmenge: 3000 Stücke
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RN1414,LF docget.jsp?did=18796&prodName=RN1415
RN1414,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 14779 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
107+0.2 EUR
173+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
Mindestbestellmenge: 67 Stücke
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RN1404,LF docget.jsp?did=18787&prodName=RN1401
RN1404,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1404,LF docget.jsp?did=18787&prodName=RN1401
RN1404,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2413 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
92+0.23 EUR
149+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 56 Stücke
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RN1415,LF
RN1415,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.06 EUR
Mindestbestellmenge: 3000 Stücke
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RN1415,LF
RN1415,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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67+0.31 EUR
110+0.19 EUR
178+0.12 EUR
500+0.086 EUR
1000+0.075 EUR
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TLP3555A(LF1,F docget.jsp?did=61844&prodName=TLP3555A
TLP3555A(LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2.5A 0-40V
On-State Resistance (Max): 100 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 4-SMD
Approval Agency: CSA, cUL, UL, VDE
Load Current: 3 A
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.64VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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TTB1020B,S4X(S TTB1020B_datasheet_en_20200129.pdf?did=13851&prodName=TTB1020B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR PNP TO220
Packaging: Tube
Produkt ist nicht verfügbar
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TB62218AFTG,C8,EL TB62218AFTG_datasheet_en_20120312.pdf?did=13039&prodName=TB62218AFTG
TB62218AFTG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTRDRV BIPLR 4.75-5.25V 48QFN
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 48-QFN (7x7)
Voltage - Load: 10V ~ 38V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2000 Stücke:
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3+7.66 EUR
10+4.93 EUR
25+4.2 EUR
100+3.39 EUR
250+3 EUR
500+2.75 EUR
1000+2.55 EUR
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TCR3LM18A,RF docget.jsp?did=151501&prodName=TCR3LM33A
Hersteller: Toshiba Semiconductor and Storage
Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.445V @ 200mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2.2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
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5000+0.18 EUR
10000+0.17 EUR
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TCR3LM18A,RF docget.jsp?did=151501&prodName=TCR3LM33A
Hersteller: Toshiba Semiconductor and Storage
Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.445V @ 200mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2.2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
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18+1.18 EUR
31+0.69 EUR
38+0.57 EUR
100+0.43 EUR
250+0.36 EUR
500+0.32 EUR
1000+0.29 EUR
2500+0.24 EUR
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TCR3LM33A,RF docget.jsp?did=151501&prodName=TCR3LM33A
Hersteller: Toshiba Semiconductor and Storage
Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.251V @ 200mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2.2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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5000+0.21 EUR
10000+0.2 EUR
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TCR3LM33A,RF docget.jsp?did=151501&prodName=TCR3LM33A
Hersteller: Toshiba Semiconductor and Storage
Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.251V @ 200mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2.2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
31+0.69 EUR
38+0.57 EUR
100+0.43 EUR
250+0.36 EUR
500+0.32 EUR
1000+0.29 EUR
2500+0.24 EUR
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TC74HC4049AF(EL,F) docget.jsp?did=70208&prodName=TC74HC4049AF
TC74HC4049AF(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERTING 6V 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOP
Produkt ist nicht verfügbar
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HN4A06J(TE85L,F) HN4A06J.pdf
HN4A06J(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 120V 100MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
Produkt ist nicht verfügbar
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HN4C06J-BL(TE85L,F
HN4C06J-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 120V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
Produkt ist nicht verfügbar
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TLP241BP(D4TP5,E
TLP241BP(D4TP5,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
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TLP241BP(TP1,E
TLP241BP(TP1,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
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TLP241BP(TP5,E
TLP241BP(TP5,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
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TLP241BPF(TP4,E TLP241BP_datasheet_en_20231012.pdf?did=154225&prodName=TLP241BP
TLP241BPF(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
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TLP241BPF(D4TP4E
TLP241BPF(D4TP4E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
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TLP241BP(LF1,E
TLP241BP(LF1,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
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TLP241BP(LF5,E
TLP241BP(LF5,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
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TLP241BP(D4LF5,E
TLP241BP(D4LF5,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-SMD
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Surface Mount
Output Type: DC
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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TLP241BPF(D4LF4E
TLP241BPF(D4LF4E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-SMD
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Surface Mount
Output Type: DC
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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TLP241BP(D4LF1,E
TLP241BP(D4LF1,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tube
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-SMD
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Surface Mount
Output Type: DC
Produkt ist nicht verfügbar
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TLP241BPF(D4,E
TLP241BPF(D4,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Produkt ist nicht verfügbar
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TLP241BP(E
TLP241BP(E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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TLP241BPF(E
TLP241BPF(E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Produkt ist nicht verfügbar
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TLP241BPF(LF4,E
TLP241BPF(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-SMD
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Surface Mount
Output Type: DC
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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TLP785(D4-GRH,F TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Produkt ist nicht verfügbar
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TC78H620FNG TC78H620FNG_datasheet_en_20161125.pdf?did=35802&prodName=TC78H620FNG
TC78H620FNG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTRDRV UNIPLR 2.7-5.5V 16SSOP
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Step Resolution: 1, 1/2
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Unipolar
Supplier Device Package: 16-SSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Produkt ist nicht verfügbar
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RN2409,LF RN2407-9.pdf
RN2409,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.064 EUR
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RN2409,LF RN2407-9.pdf
RN2409,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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AnzahlPrivatkunde
67+0.31 EUR
106+0.2 EUR
172+0.12 EUR
500+0.089 EUR
1000+0.077 EUR
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TMPM369FDFG TMPM369FDFG_datasheet_en_20230721.pdf?did=13802&prodName=TMPM369FDFG
TMPM369FDFG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-FQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, Microwire, SIO, SPI, SSP, UART/USART, USB
Peripherals: DMA, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
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10+14.93 EUR
25+13.92 EUR
200+12.17 EUR
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SSM6P56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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TPH2R408QM,LQ
TPH2R408QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V U-MOS X-H SOP-ADVANCE(N) 2.4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Produkt ist nicht verfügbar
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TPH3R008QM,LQ datasheet_en_20221125.pdf?did=143627
TPH3R008QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
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5000+1.04 EUR
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TPH3R008QM,LQ datasheet_en_20221125.pdf?did=143627
TPH3R008QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
auf Bestellung 14688 Stücke:
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6+3.86 EUR
10+2.45 EUR
100+1.67 EUR
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TPH4R008NH1,LQ
TPH4R008NH1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Produkt ist nicht verfügbar
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RN1104MFV,L3F(CT RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV
RN1104MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
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8000+0.055 EUR
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RN1104MFV,L3F(CT RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV
RN1104MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 15700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
107+0.2 EUR
172+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
2000+0.069 EUR
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RN1104MFV,L3XHF(CT RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV
RN1104MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.092 EUR
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RN1104MFV,L3XHF(CT RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV
RN1104MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 14971 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
67+0.31 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
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RN2104MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false
RN2104MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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RN2104MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false
RN2104MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 7725 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
67+0.32 EUR
107+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
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TLP3640A(TPL,E TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A
TLP3640A(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
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2500+2.57 EUR
5000+2.48 EUR
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TLP3640A(TPL,E TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A
TLP3640A(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 8469 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.14 EUR
10+3.69 EUR
25+3.52 EUR
50+3.4 EUR
100+3.28 EUR
250+3.14 EUR
500+3.02 EUR
1000+2.93 EUR
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TLP3640A(V4TPL,E TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A
TLP3640A(V4TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.8 EUR
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TLP3640A(V4TPL,E TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A
TLP3640A(V4TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 4149 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.14 EUR
10+3.69 EUR
25+3.52 EUR
50+3.4 EUR
100+3.28 EUR
250+3.14 EUR
500+3.02 EUR
1000+2.93 EUR
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RN1111,LXHF(CT docget.jsp?did=18754&prodName=RN1111
RN1111,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Resistors Included: R1 Only
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
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RN1111,LXHF(CT docget.jsp?did=18754&prodName=RN1111
RN1111,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Resistors Included: R1 Only
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
auf Bestellung 5470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
61+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
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