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TCR2EF105,LM(CT TCR2EF105,LM(CT Toshiba Semiconductor and Storage TCR2EF105_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF105 Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.77V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EF105,LM(CT TCR2EF105,LM(CT Toshiba Semiconductor and Storage TCR2EF105_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF105 Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.77V @ 150mA
Protection Features: Over Current
auf Bestellung 2975 Stücke:
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52+0.34 EUR
64+0.28 EUR
100+0.21 EUR
250+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
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TCR2LE115,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF19 Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
Voltage Dropout (Max): 1.3V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
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4000+0.11 EUR
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TCR2LE115,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF19 Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
Voltage Dropout (Max): 1.3V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
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500+0.16 EUR
1000+0.14 EUR
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TCR2LE095,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF19 Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.95V
Control Features: Enable
Voltage Dropout (Max): 1.48V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
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TCR2LE095,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LF19 Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.95V
Control Features: Enable
Voltage Dropout (Max): 1.48V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
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28+0.63 EUR
48+0.37 EUR
59+0.3 EUR
100+0.23 EUR
250+0.19 EUR
500+0.16 EUR
1000+0.14 EUR
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TPH6R008QM,LQ Toshiba Semiconductor and Storage Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 5000 Stücke:
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TPH6R008QM,LQ Toshiba Semiconductor and Storage Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 9980 Stücke:
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12+1.57 EUR
25+1.31 EUR
100+1.02 EUR
250+0.88 EUR
500+0.79 EUR
1000+0.72 EUR
2500+0.64 EUR
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TK040N60Z1,S1F TK040N60Z1,S1F Toshiba Semiconductor and Storage docget.jsp?did=154765&prodName=TK040N60Z1 Description: 600V DTMOS6 TO-247 40MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 21.2A, 10V
Power Dissipation (Max): 297W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 300 V
auf Bestellung 30 Stücke:
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2+12.07 EUR
30+9.57 EUR
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TD62503FG,EL TD62503FG,EL Toshiba Semiconductor and Storage TD6250%282%2C3%29PG%2CFG.pdf Description: IC DRIVER 7/0 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Number of Drivers/Receivers: 7/0
Supplier Device Package: 16-SOP
Produkt ist nicht verfügbar
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TC74AC04FTEL TC74AC04FTEL Toshiba Semiconductor and Storage TC74AC04FT_datasheet_en_20210506.pdf?did=70736&prodName=TC74AC04FT Description: IC INVERTER 6CH 1IN 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 6.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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MKZ6V8,LM(B MKZ6V8,LM(B Toshiba Semiconductor and Storage Description: 6.8V ZENER DIODE, SOT23 PD (MAX)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
auf Bestellung 6000 Stücke:
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3000+0.057 EUR
6000+0.051 EUR
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MKZ6V8,LM(B MKZ6V8,LM(B Toshiba Semiconductor and Storage Description: 6.8V ZENER DIODE, SOT23 PD (MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
auf Bestellung 6000 Stücke:
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63+0.28 EUR
102+0.17 EUR
124+0.14 EUR
165+0.11 EUR
250+0.089 EUR
500+0.078 EUR
1000+0.069 EUR
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TMPM4MNFYAFG(DBB) TMPM4MNFYAFG(DBB) Toshiba Semiconductor and Storage Description: MCU, CORTEX M4F, VE, 160MHZ, CAN
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
auf Bestellung 890 Stücke:
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1+18.74 EUR
10+12.84 EUR
25+11.3 EUR
80+9.8 EUR
230+9 EUR
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TK068N65Z5,S1F TK068N65Z5,S1F Toshiba Semiconductor and Storage TK068N65Z5_datasheet_en_20240123.pdf?did=157702&prodName=TK068N65Z5 Description: 650V DTMOS6-HSD TO-247 68MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 18.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.69mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 300 V
auf Bestellung 235 Stücke:
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TB67Z833HFTG(O,EL) TB67Z833HFTG(O,EL) Toshiba Semiconductor and Storage Description: 80V 3-PHASE GATE DRIVER,HW INTER
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 75V
Input Type: Non-Inverting
Supplier Device Package: 40-WQFN (6x6)
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 1.5V
Current - Peak Output (Source, Sink): 1A, 2A
auf Bestellung 4000 Stücke:
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4000+1.79 EUR
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TB67Z833HFTG(O,EL) TB67Z833HFTG(O,EL) Toshiba Semiconductor and Storage Description: 80V 3-PHASE GATE DRIVER,HW INTER
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 75V
Input Type: Non-Inverting
Supplier Device Package: 40-WQFN (6x6)
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 1.5V
Current - Peak Output (Source, Sink): 1A, 2A
auf Bestellung 4000 Stücke:
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250+2.24 EUR
500+2.06 EUR
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TC74HCT240AF(EL,F) Toshiba Semiconductor and Storage Description: IC BUFFER INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
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MN08ADA400E Toshiba Semiconductor and Storage Description: MN08 NAS 4TB
Packaging: Bulk
Produkt ist nicht verfügbar
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MN08ADA600 Toshiba Semiconductor and Storage cHDD-MN-Air-Product-Overview_r7R.pdf Description: MN08 NAS 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MN08ADA800 Toshiba Semiconductor and Storage cHDD-MN-Air-Product-Overview_r7R.pdf Description: MN08 NAS 8TB
Packaging: Bulk
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TC74HC153AF(EL,F) TC74HC153AF(EL,F) Toshiba Semiconductor and Storage docget.jsp?did=10324&prodName=TC74HC153AF Description: IC DATA SELECT/MUX 2X4:1 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Data Selector/Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Produkt ist nicht verfügbar
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TC78S600FTG,EL TC78S600FTG,EL Toshiba Semiconductor and Storage TC78S600FNG_datasheet_en_20141001.pdf?did=13443&prodName=TC78S600FNG Description: STEPPER MOTOR DRIVER IC, 18V/1.0
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
auf Bestellung 4398 Stücke:
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5+4.1 EUR
10+2.57 EUR
25+2.17 EUR
100+1.72 EUR
250+1.5 EUR
500+1.36 EUR
1000+1.25 EUR
2500+1.13 EUR
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TC4081BF(EL,N,F) TC4081BF(EL,N,F) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC4081BF(EL,N,F) TC4081BF(EL,N,F) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TRS20N120HB,S1Q TRS20N120HB,S1Q Toshiba Semiconductor and Storage docget.jsp?did=158277&prodName=TRS20N120HB Description: DIODE ARRAY SIC 1200V 32A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 32A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 60 Stücke:
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1+20.96 EUR
30+15.39 EUR
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TRS15N120HB,S1Q TRS15N120HB,S1Q Toshiba Semiconductor and Storage docget.jsp?did=158269&prodName=TRS15N120HB Description: DIODE ARRAY SIC 1200V 25A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 7.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
auf Bestellung 60 Stücke:
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TLP171D(TP,F TLP171D(TP,F Toshiba Semiconductor and Storage docget.jsp?did=13863&prodName=TLP171D Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.65 EUR
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TLP171D(TP,F TLP171D(TP,F Toshiba Semiconductor and Storage docget.jsp?did=13863&prodName=TLP171D Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
10+2.18 EUR
25+2.08 EUR
50+2.01 EUR
100+1.94 EUR
250+1.85 EUR
500+1.79 EUR
1000+1.73 EUR
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TC7SZ04AFS,L3J TC7SZ04AFS,L3J Toshiba Semiconductor and Storage docget.jsp?did=1593&prodName=TC7SZ04AFS Description: IC INVERTER 1CH 1-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: fSV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SZ04AFS,L3J TC7SZ04AFS,L3J Toshiba Semiconductor and Storage docget.jsp?did=1593&prodName=TC7SZ04AFS Description: IC INVERTER 1CH 1-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: fSV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 9612 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
50+0.36 EUR
60+0.29 EUR
100+0.22 EUR
250+0.18 EUR
500+0.16 EUR
1000+0.14 EUR
2500+0.12 EUR
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2SA2056(TE85L,F) 2SA2056(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20440&prodName=2SA2056 Description: TRANS PNP 50V 2A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
auf Bestellung 3000 Stücke:
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3000+0.19 EUR
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2SA2056(TE85L,F) 2SA2056(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20440&prodName=2SA2056 Description: TRANS PNP 50V 2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
auf Bestellung 5065 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
33+0.54 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
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TC4053BFTEL TC4053BFTEL Toshiba Semiconductor and Storage TC4052BF_datasheet_en_20160115.pdf?did=18603&prodName=TC4052BF Description: IC SWITCH SPDTX3 160OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1.5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Produkt ist nicht verfügbar
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CTS05F40,L3F CTS05F40,L3F Toshiba Semiconductor and Storage CTS05F40_datasheet_en_20160707.pdf?did=53602&prodName=CTS05F40 Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Produkt ist nicht verfügbar
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CTS05F40,L3F CTS05F40,L3F Toshiba Semiconductor and Storage CTS05F40_datasheet_en_20160707.pdf?did=53602&prodName=CTS05F40 Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
73+0.24 EUR
125+0.14 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.087 EUR
5000+0.076 EUR
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RN1307,LXHF RN1307,LXHF Toshiba Semiconductor and Storage RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
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RN1307,LXHF RN1307,LXHF Toshiba Semiconductor and Storage RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5850 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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RN1309,LXHF RN1309,LXHF Toshiba Semiconductor and Storage RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.079 EUR
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RN1309,LXHF RN1309,LXHF Toshiba Semiconductor and Storage RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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RN1305,LXHF RN1305,LXHF Toshiba Semiconductor and Storage RN1301_datasheet_en_20210824.pdf?did=18776&prodName=RN1301 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
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RN1305,LXHF RN1305,LXHF Toshiba Semiconductor and Storage RN1301_datasheet_en_20210824.pdf?did=18776&prodName=RN1301 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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RN1403,LF RN1403,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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RN1403,LF RN1403,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 2692 Stücke:
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56+0.32 EUR
92+0.19 EUR
149+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
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CMZ36(TE12L,Q,M) CMZ36(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_to_CMZ51_5-15-15.pdf Description: PB-F ZENER DIODE M-FLAT MOQ=3000
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
auf Bestellung 9000 Stücke:
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3000+0.34 EUR
6000+0.32 EUR
9000+0.3 EUR
Mindestbestellmenge: 3000
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CMZ36(TE12L,Q,M) CMZ36(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_to_CMZ51_5-15-15.pdf Description: PB-F ZENER DIODE M-FLAT MOQ=3000
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
auf Bestellung 9160 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.46 EUR
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500+0.46 EUR
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CRS15(TE85L,Q,M) CRS15(TE85L,Q,M) Toshiba Semiconductor and Storage CRS15_datasheet_en_20180709.pdf?did=22626&prodName=CRS15 Description: DIODE SCHOTTKY 30V 3A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 5526 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
31+0.58 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
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CRS15I30B(TE85L,QM CRS15I30B(TE85L,QM Toshiba Semiconductor and Storage CRS15I30B_datasheet_en_20140219.pdf?did=14910&prodName=CRS15I30B Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 5985 Stücke:
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22+0.83 EUR
34+0.53 EUR
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500+0.28 EUR
1000+0.25 EUR
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CRS14(TE85L,Q,M) CRS14(TE85L,Q,M) Toshiba Semiconductor and Storage CRS14_datasheet_en_20181115.pdf?did=22737&prodName=CRS14 Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 3837 Stücke:
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17+1.04 EUR
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100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
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TCR2EF12,LM(CT TCR2EF12,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 1.2V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current
auf Bestellung 3000 Stücke:
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3000+0.069 EUR
Mindestbestellmenge: 3000
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74LCX14FT 74LCX14FT Toshiba Semiconductor and Storage docget.jsp?did=15394&prodName=74LCX14FT Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
auf Bestellung 4743 Stücke:
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19+0.95 EUR
30+0.59 EUR
36+0.49 EUR
100+0.38 EUR
250+0.32 EUR
500+0.29 EUR
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SSM5N16FU,LF Toshiba Semiconductor and Storage SSM5N16FU_datasheet_en_20140301.pdf?did=19730&prodName=SSM5N16FU Description: MOSFET 2N-CH 20V 0.1A USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USV
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SSM5N16FU,LF Toshiba Semiconductor and Storage SSM5N16FU_datasheet_en_20140301.pdf?did=19730&prodName=SSM5N16FU Description: MOSFET 2N-CH 20V 0.1A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USV
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RN2302,LF RN2302,LF Toshiba Semiconductor and Storage docget.jsp?did=18998&prodName=RN2302 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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TC358746AXBG(EL) Toshiba Semiconductor and Storage Description: IC MIPI CSI2 TO PARALLEL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC358860XBG(GOH) Toshiba Semiconductor and Storage Description: TC358860XBG(GOH)
Packaging: Tape & Reel (TR)
Package / Case: 65-TFBGA
Mounting Type: Surface Mount
Interface: I2C
Voltage - Supply: 1.04V ~ 1.16V, 1.1V ~ 1.25V, 1.71V ~ 1.89V
Applications: DisplayPort
Supplier Device Package: 65-TFBGA (5x5)
Produkt ist nicht verfügbar
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RN2911,LXHF(CT RN2911,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18911&prodName=RN2910 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
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RN2911,LXHF(CT RN2911,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18911&prodName=RN2910 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
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RN1901FE,LXHF(CT RN1901FE,LXHF(CT Toshiba Semiconductor and Storage RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
4000+0.12 EUR
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RN1901FE,LXHF(CT RN1901FE,LXHF(CT Toshiba Semiconductor and Storage RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7940 Stücke:
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39+0.46 EUR
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TCR2EF105,LM(CT TCR2EF105_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF105
TCR2EF105,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.77V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EF105,LM(CT TCR2EF105_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF105
TCR2EF105,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.77V @ 150mA
Protection Features: Over Current
auf Bestellung 2975 Stücke:
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30+0.6 EUR
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TCR2LE115,LM(CT docget.jsp?did=28807&prodName=TCR2LF19
Hersteller: Toshiba Semiconductor and Storage
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
Voltage Dropout (Max): 1.3V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
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4000+0.11 EUR
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TCR2LE115,LM(CT docget.jsp?did=28807&prodName=TCR2LF19
Hersteller: Toshiba Semiconductor and Storage
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
Voltage Dropout (Max): 1.3V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
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Anzahl Preis
28+0.63 EUR
48+0.37 EUR
59+0.3 EUR
100+0.23 EUR
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500+0.16 EUR
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TCR2LE095,LM(CT docget.jsp?did=28807&prodName=TCR2LF19
Hersteller: Toshiba Semiconductor and Storage
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.95V
Control Features: Enable
Voltage Dropout (Max): 1.48V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
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4000+0.11 EUR
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TCR2LE095,LM(CT docget.jsp?did=28807&prodName=TCR2LF19
Hersteller: Toshiba Semiconductor and Storage
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.95V
Control Features: Enable
Voltage Dropout (Max): 1.48V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
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Anzahl Preis
28+0.63 EUR
48+0.37 EUR
59+0.3 EUR
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500+0.16 EUR
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TPH6R008QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 5000 Stücke:
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TPH6R008QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 9980 Stücke:
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7+2.55 EUR
12+1.57 EUR
25+1.31 EUR
100+1.02 EUR
250+0.88 EUR
500+0.79 EUR
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TK040N60Z1,S1F docget.jsp?did=154765&prodName=TK040N60Z1
TK040N60Z1,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: 600V DTMOS6 TO-247 40MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 21.2A, 10V
Power Dissipation (Max): 297W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 300 V
auf Bestellung 30 Stücke:
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2+12.07 EUR
30+9.57 EUR
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TD62503FG,EL TD6250%282%2C3%29PG%2CFG.pdf
TD62503FG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC DRIVER 7/0 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Number of Drivers/Receivers: 7/0
Supplier Device Package: 16-SOP
Produkt ist nicht verfügbar
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TC74AC04FTEL TC74AC04FT_datasheet_en_20210506.pdf?did=70736&prodName=TC74AC04FT
TC74AC04FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1IN 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 6.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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MKZ6V8,LM(B
MKZ6V8,LM(B
Hersteller: Toshiba Semiconductor and Storage
Description: 6.8V ZENER DIODE, SOT23 PD (MAX)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.057 EUR
6000+0.051 EUR
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MKZ6V8,LM(B
MKZ6V8,LM(B
Hersteller: Toshiba Semiconductor and Storage
Description: 6.8V ZENER DIODE, SOT23 PD (MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
102+0.17 EUR
124+0.14 EUR
165+0.11 EUR
250+0.089 EUR
500+0.078 EUR
1000+0.069 EUR
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TMPM4MNFYAFG(DBB)
TMPM4MNFYAFG(DBB)
Hersteller: Toshiba Semiconductor and Storage
Description: MCU, CORTEX M4F, VE, 160MHZ, CAN
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.74 EUR
10+12.84 EUR
25+11.3 EUR
80+9.8 EUR
230+9 EUR
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TK068N65Z5,S1F TK068N65Z5_datasheet_en_20240123.pdf?did=157702&prodName=TK068N65Z5
TK068N65Z5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: 650V DTMOS6-HSD TO-247 68MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 18.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.69mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 300 V
auf Bestellung 235 Stücke:
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Anzahl Preis
2+14.71 EUR
30+10.64 EUR
120+10.16 EUR
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TB67Z833HFTG(O,EL)
TB67Z833HFTG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: 80V 3-PHASE GATE DRIVER,HW INTER
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 75V
Input Type: Non-Inverting
Supplier Device Package: 40-WQFN (6x6)
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 1.5V
Current - Peak Output (Source, Sink): 1A, 2A
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+1.79 EUR
Mindestbestellmenge: 4000
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TB67Z833HFTG(O,EL)
TB67Z833HFTG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: 80V 3-PHASE GATE DRIVER,HW INTER
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 75V
Input Type: Non-Inverting
Supplier Device Package: 40-WQFN (6x6)
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 1.5V
Current - Peak Output (Source, Sink): 1A, 2A
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.83 EUR
10+3.72 EUR
25+3.17 EUR
100+2.55 EUR
250+2.24 EUR
500+2.06 EUR
1000+1.9 EUR
Mindestbestellmenge: 4
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TC74HCT240AF(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
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MN08ADA400E
Hersteller: Toshiba Semiconductor and Storage
Description: MN08 NAS 4TB
Packaging: Bulk
Produkt ist nicht verfügbar
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MN08ADA600 cHDD-MN-Air-Product-Overview_r7R.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MN08 NAS 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MN08ADA800 cHDD-MN-Air-Product-Overview_r7R.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MN08 NAS 8TB
Packaging: Bulk
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TC74HC153AF(EL,F) docget.jsp?did=10324&prodName=TC74HC153AF
TC74HC153AF(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC DATA SELECT/MUX 2X4:1 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Data Selector/Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Produkt ist nicht verfügbar
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TC78S600FTG,EL TC78S600FNG_datasheet_en_20141001.pdf?did=13443&prodName=TC78S600FNG
TC78S600FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 18V/1.0
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
auf Bestellung 4398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.1 EUR
10+2.57 EUR
25+2.17 EUR
100+1.72 EUR
250+1.5 EUR
500+1.36 EUR
1000+1.25 EUR
2500+1.13 EUR
Mindestbestellmenge: 5
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TC4081BF(EL,N,F)
TC4081BF(EL,N,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC4081BF(EL,N,F)
TC4081BF(EL,N,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TRS20N120HB,S1Q docget.jsp?did=158277&prodName=TRS20N120HB
TRS20N120HB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 1200V 32A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 32A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.96 EUR
30+15.39 EUR
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TRS15N120HB,S1Q docget.jsp?did=158269&prodName=TRS15N120HB
TRS15N120HB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 1200V 25A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 7.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.52 EUR
30+12.17 EUR
Mindestbestellmenge: 2
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TLP171D(TP,F docget.jsp?did=13863&prodName=TLP171D
TLP171D(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.65 EUR
Mindestbestellmenge: 2500
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TLP171D(TP,F docget.jsp?did=13863&prodName=TLP171D
TLP171D(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+2.18 EUR
25+2.08 EUR
50+2.01 EUR
100+1.94 EUR
250+1.85 EUR
500+1.79 EUR
1000+1.73 EUR
Mindestbestellmenge: 8
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TC7SZ04AFS,L3J docget.jsp?did=1593&prodName=TC7SZ04AFS
TC7SZ04AFS,L3J
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: fSV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SZ04AFS,L3J docget.jsp?did=1593&prodName=TC7SZ04AFS
TC7SZ04AFS,L3J
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: fSV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 9612 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
50+0.36 EUR
60+0.29 EUR
100+0.22 EUR
250+0.18 EUR
500+0.16 EUR
1000+0.14 EUR
2500+0.12 EUR
5000+0.11 EUR
Mindestbestellmenge: 30
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2SA2056(TE85L,F) docget.jsp?did=20440&prodName=2SA2056
2SA2056(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
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2SA2056(TE85L,F) docget.jsp?did=20440&prodName=2SA2056
2SA2056(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
auf Bestellung 5065 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
33+0.54 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 20
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TC4053BFTEL TC4052BF_datasheet_en_20160115.pdf?did=18603&prodName=TC4052BF
TC4053BFTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDTX3 160OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1.5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Produkt ist nicht verfügbar
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CTS05F40,L3F CTS05F40_datasheet_en_20160707.pdf?did=53602&prodName=CTS05F40
CTS05F40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Produkt ist nicht verfügbar
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CTS05F40,L3F CTS05F40_datasheet_en_20160707.pdf?did=53602&prodName=CTS05F40
CTS05F40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
73+0.24 EUR
125+0.14 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.087 EUR
5000+0.076 EUR
Mindestbestellmenge: 42
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RN1307,LXHF RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307
RN1307,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
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RN1307,LXHF RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307
RN1307,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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RN1309,LXHF RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307
RN1309,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.079 EUR
Mindestbestellmenge: 3000
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RN1309,LXHF RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307
RN1309,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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RN1305,LXHF RN1301_datasheet_en_20210824.pdf?did=18776&prodName=RN1301
RN1305,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
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RN1305,LXHF RN1301_datasheet_en_20210824.pdf?did=18776&prodName=RN1301
RN1305,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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RN1403,LF docget.jsp?did=18787&prodName=RN1401
RN1403,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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RN1403,LF docget.jsp?did=18787&prodName=RN1401
RN1403,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 2692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
92+0.19 EUR
149+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
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CMZ36(TE12L,Q,M) CMZ12_to_CMZ51_5-15-15.pdf
CMZ36(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F ZENER DIODE M-FLAT MOQ=3000
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.34 EUR
6000+0.32 EUR
9000+0.3 EUR
Mindestbestellmenge: 3000
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CMZ36(TE12L,Q,M) CMZ12_to_CMZ51_5-15-15.pdf
CMZ36(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F ZENER DIODE M-FLAT MOQ=3000
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
auf Bestellung 9160 Stücke:
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Anzahl Preis
13+1.46 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.41 EUR
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CRS15(TE85L,Q,M) CRS15_datasheet_en_20180709.pdf?did=22626&prodName=CRS15
CRS15(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 5526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
31+0.58 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
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CRS15I30B(TE85L,QM CRS15I30B_datasheet_en_20140219.pdf?did=14910&prodName=CRS15I30B
CRS15I30B(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 5985 Stücke:
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Anzahl Preis
22+0.83 EUR
34+0.53 EUR
100+0.38 EUR
500+0.28 EUR
1000+0.25 EUR
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CRS14(TE85L,Q,M) CRS14_datasheet_en_20181115.pdf?did=22737&prodName=CRS14
CRS14(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 3837 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
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TCR2EF12,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EF12,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.2V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.069 EUR
Mindestbestellmenge: 3000
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74LCX14FT docget.jsp?did=15394&prodName=74LCX14FT
74LCX14FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
auf Bestellung 4743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
30+0.59 EUR
36+0.49 EUR
100+0.38 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
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SSM5N16FU,LF SSM5N16FU_datasheet_en_20140301.pdf?did=19730&prodName=SSM5N16FU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.1A USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.11 EUR
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SSM5N16FU,LF SSM5N16FU_datasheet_en_20140301.pdf?did=19730&prodName=SSM5N16FU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.1A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
65+0.27 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.13 EUR
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RN2302,LF docget.jsp?did=18998&prodName=RN2302
RN2302,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
92+0.19 EUR
149+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
Mindestbestellmenge: 56
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TC358746AXBG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MIPI CSI2 TO PARALLEL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC358860XBG(GOH)
Hersteller: Toshiba Semiconductor and Storage
Description: TC358860XBG(GOH)
Packaging: Tape & Reel (TR)
Package / Case: 65-TFBGA
Mounting Type: Surface Mount
Interface: I2C
Voltage - Supply: 1.04V ~ 1.16V, 1.1V ~ 1.25V, 1.71V ~ 1.89V
Applications: DisplayPort
Supplier Device Package: 65-TFBGA (5x5)
Produkt ist nicht verfügbar
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RN2911,LXHF(CT docget.jsp?did=18911&prodName=RN2910
RN2911,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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RN2911,LXHF(CT docget.jsp?did=18911&prodName=RN2910
RN2911,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
50+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
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RN1901FE,LXHF(CT RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE
RN1901FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
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Anzahl Preis
4000+0.12 EUR
Mindestbestellmenge: 4000
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RN1901FE,LXHF(CT RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE
RN1901FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
58+0.3 EUR
100+0.2 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 39
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