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TLP5774H(D4TP4,E TLP5774H(D4TP4,E Toshiba Semiconductor and Storage docget.jsp?did=70657&prodName=TLP5774H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.69 EUR
Mindestbestellmenge: 1500
TLP5774H(D4TP4,E TLP5774H(D4TP4,E Toshiba Semiconductor and Storage docget.jsp?did=70657&prodName=TLP5774H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.22 EUR
10+ 2.82 EUR
100+ 2.17 EUR
500+ 1.96 EUR
Mindestbestellmenge: 5
TLP5771H(D4-TP,E TLP5771H(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=70655&prodName=TLP5771H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
TLP5771H(D4-TP,E TLP5771H(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=70655&prodName=TLP5771H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1485 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.91 EUR
10+ 2.6 EUR
100+ 2 EUR
500+ 1.81 EUR
Mindestbestellmenge: 5
TLP5771H(TP,E TLP5771H(TP,E Toshiba Semiconductor and Storage docget.jsp?did=70655&prodName=TLP5771H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.91 EUR
10+ 2.6 EUR
100+ 2 EUR
500+ 1.81 EUR
Mindestbestellmenge: 5
TC74VHC00FK(EL,K) TC74VHC00FK(EL,K) Toshiba Semiconductor and Storage Description: IC GATE NAND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
TC74VHC00FK(EL,K) TC74VHC00FK(EL,K) Toshiba Semiconductor and Storage Description: IC GATE NAND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
TODX2353(F) Toshiba Semiconductor and Storage TODX2353(F)_datasheet_en_20150115.pdf?did=29677&prodName=TODX2353(F) Description: TXRX MOD OPTICAL 500KBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 500kbps
Produkt ist nicht verfügbar
TK8P65W,RQ Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Produkt ist nicht verfügbar
TK8P65W,RQ Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
auf Bestellung 1974 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.94 EUR
10+ 2.44 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.39 EUR
Mindestbestellmenge: 6
MKZ5V6,LM(B MKZ5V6,LM(B Toshiba Semiconductor and Storage Description: 5.6V ZENER DIODE, SOT23 PD (MAX)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Produkt ist nicht verfügbar
MKZ5V6,LM(B MKZ5V6,LM(B Toshiba Semiconductor and Storage Description: 5.6V ZENER DIODE, SOT23 PD (MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Produkt ist nicht verfügbar
XCUZ5V6,H3XHF(B Toshiba Semiconductor and Storage Description: 5.6 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
XCUZ5V6,H3XHF(B Toshiba Semiconductor and Storage Description: 5.6 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TLP268J(T2-TPL,E TLP268J(T2-TPL,E Toshiba Semiconductor and Storage TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J Description: TRIAC COUPLER; 2MA LOW TRIGGER C
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.6 EUR
Mindestbestellmenge: 3000
TLP268J(T2-TPL,E TLP268J(T2-TPL,E Toshiba Semiconductor and Storage TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J Description: TRIAC COUPLER; 2MA LOW TRIGGER C
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
16+ 1.12 EUR
100+ 0.83 EUR
500+ 0.76 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 10
MG08SDA400A Toshiba Semiconductor and Storage eHDD-MG08-D_Product-Manual_r0.pdf Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
MG08SDA400N Toshiba Semiconductor and Storage eHDD-MG08-D_Product-Manual_r0.pdf Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
MG08SDA400E Toshiba Semiconductor and Storage eHDD-MG08-D_Product-Manual_r0.pdf Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
TPC8228-H,LQ Toshiba Semiconductor and Storage TPC8228-H_Rev2.0_1-7-14.pdf Description: MOSFET 2N-CH 60V 3.8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
TPC8227-H,LQ Toshiba Semiconductor and Storage TPC8227-H_Rev2.0_1-7-14.pdf Description: MOSFET 2N-CH 40V 5.1A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
7UL1G17FS,LF 7UL1G17FS,LF Toshiba Semiconductor and Storage 7UL1G17FS_datasheet_en_20221021.pdf?did=61228&prodName=7UL1G17FS Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.14 EUR
Mindestbestellmenge: 10000
7UL1G17FS,LF 7UL1G17FS,LF Toshiba Semiconductor and Storage 7UL1G17FS_datasheet_en_20221021.pdf?did=61228&prodName=7UL1G17FS Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
33+ 0.55 EUR
36+ 0.49 EUR
100+ 0.34 EUR
250+ 0.29 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
2500+ 0.16 EUR
5000+ 0.15 EUR
Mindestbestellmenge: 25
7UL1G08FS,RF(B Toshiba Semiconductor and Storage datasheet_en_20221021.pdf?did=60334 Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
7UL1G08FS,RF(B Toshiba Semiconductor and Storage datasheet_en_20221021.pdf?did=60334 Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
7UL1G04NX,ELF(S Toshiba Semiconductor and Storage 7UL1G04NX_datasheet_en_20230912.pdf?did=154197&prodName=7UL1G04NX Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
7UL1G04NX,ELF(S Toshiba Semiconductor and Storage 7UL1G04NX_datasheet_en_20230912.pdf?did=154197&prodName=7UL1G04NX Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
7UL1G125NX,ELF(S Toshiba Semiconductor and Storage datasheet_en_20231129.pdf?did=154201 Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6V
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
Produkt ist nicht verfügbar
7UL1G125NX,ELF(S Toshiba Semiconductor and Storage datasheet_en_20231129.pdf?did=154201 Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6V
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
Produkt ist nicht verfügbar
TK35S04K3L(T6L1,NQ TK35S04K3L(T6L1,NQ Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 40V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V
Produkt ist nicht verfügbar
TK35S04K3L(T6L1,NQ TK35S04K3L(T6L1,NQ Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 40V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V
auf Bestellung 1900 Stücke:
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TK33S10N1L,LQ TK33S10N1L,LQ Toshiba Semiconductor and Storage TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 1497 Stücke:
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CMS16(TE12L,Q,M) CMS16(TE12L,Q,M) Toshiba Semiconductor and Storage CMS16_datasheet_en_20180404.pdf?did=6307&prodName=CMS16 Description: DIODE SCHOTTKY 40V 3A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
CMS16(TE12L,Q,M) CMS16(TE12L,Q,M) Toshiba Semiconductor and Storage CMS16_datasheet_en_20180404.pdf?did=6307&prodName=CMS16 Description: DIODE SCHOTTKY 40V 3A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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TPCP8J01(TE85L,F,M Toshiba Semiconductor and Storage Description: MOSFET P-CH 32V 5.5A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 32 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
Produkt ist nicht verfügbar
TK10A80W,S4X TK10A80W,S4X Toshiba Semiconductor and Storage TK10A80W_datasheet_en_20161008.pdf?did=30614&prodName=TK10A80W Description: MOSFET N-CH 800V 9.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
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TCR3UG1825A,LF Toshiba Semiconductor and Storage TCR3UG1825A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG1825A Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
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TCR3UG1825A,LF Toshiba Semiconductor and Storage TCR3UG1825A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG1825A Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
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TCK321G,LF TCK321G,LF Toshiba Semiconductor and Storage TCK321G_datasheet_en_20151020.pdf?did=30721&prodName=TCK321G Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Produkt ist nicht verfügbar
TCK321G,LF TCK321G,LF Toshiba Semiconductor and Storage TCK321G_datasheet_en_20151020.pdf?did=30721&prodName=TCK321G Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
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TK042N65Z5,S1F(S TK042N65Z5,S1F(S Toshiba Semiconductor and Storage docget.jsp?did=154367&prodName=TK042N65Z5 Description: 650V DTMOS6 HSD 42MOHM TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.85mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V
auf Bestellung 202 Stücke:
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TTC501,LF(B Toshiba Semiconductor and Storage Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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TTC501,LF(B Toshiba Semiconductor and Storage Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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TC74VHC244F(EL,K,F TC74VHC244F(EL,K,F Toshiba Semiconductor and Storage Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
TC74VHC244F(EL,K,F TC74VHC244F(EL,K,F Toshiba Semiconductor and Storage Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
TCTH011AE,LF(CT TCTH011AE,LF(CT Toshiba Semiconductor and Storage Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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8000+ 0.26 EUR
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TCTH011AE,LF(CT TCTH011AE,LF(CT Toshiba Semiconductor and Storage Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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TCTH022AE,LF(CT TCTH022AE,LF(CT Toshiba Semiconductor and Storage Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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Mindestbestellmenge: 4000
TCTH022AE,LF(CT TCTH022AE,LF(CT Toshiba Semiconductor and Storage Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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TCTH012BE,LF(CT TCTH012BE,LF(CT Toshiba Semiconductor and Storage Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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4000+0.3 EUR
Mindestbestellmenge: 4000
TCTH012BE,LF(CT TCTH012BE,LF(CT Toshiba Semiconductor and Storage Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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TCTH012AE,LF(CT TCTH012AE,LF(CT Toshiba Semiconductor and Storage Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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4000+0.3 EUR
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TCTH012AE,LF(CT TCTH012AE,LF(CT Toshiba Semiconductor and Storage Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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TCTH021AE,LF(CT TCTH021AE,LF(CT Toshiba Semiconductor and Storage TCTH021AE_datasheet_en_20230425.pdf?did=149583&prodName=TCTH021AE Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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4000+0.3 EUR
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TCTH021AE,LF(CT TCTH021AE,LF(CT Toshiba Semiconductor and Storage TCTH021AE_datasheet_en_20230425.pdf?did=149583&prodName=TCTH021AE Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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TCTH022BE,LF(CT TCTH022BE,LF(CT Toshiba Semiconductor and Storage TCTH021BE_datasheet_en_20230425.pdf?did=149583&prodName=TCTH021BE Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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TCTH022BE,LF(CT TCTH022BE,LF(CT Toshiba Semiconductor and Storage TCTH021BE_datasheet_en_20230425.pdf?did=149583&prodName=TCTH021BE Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 7979 Stücke:
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TCTH011BE,LF(CT TCTH011BE,LF(CT Toshiba Semiconductor and Storage Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.3 EUR
Mindestbestellmenge: 4000
TCTH011BE,LF(CT TCTH011BE,LF(CT Toshiba Semiconductor and Storage Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 7975 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
31+ 0.59 EUR
35+ 0.51 EUR
50+ 0.49 EUR
100+ 0.42 EUR
500+ 0.36 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 24
TCTH021BE,LF(CT TCTH021BE,LF(CT Toshiba Semiconductor and Storage TCTH021BE_datasheet_en_20230425.pdf?did=149583&prodName=TCTH021BE Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.3 EUR
Mindestbestellmenge: 4000
TLP5774H(D4TP4,E docget.jsp?did=70657&prodName=TLP5774H
TLP5774H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1500 Stücke:
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Anzahl Preis ohne MwSt
1500+1.69 EUR
Mindestbestellmenge: 1500
TLP5774H(D4TP4,E docget.jsp?did=70657&prodName=TLP5774H
TLP5774H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1500 Stücke:
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Anzahl Preis ohne MwSt
5+4.22 EUR
10+ 2.82 EUR
100+ 2.17 EUR
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TLP5771H(D4-TP,E docget.jsp?did=70655&prodName=TLP5771H
TLP5771H(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
TLP5771H(D4-TP,E docget.jsp?did=70655&prodName=TLP5771H
TLP5771H(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.91 EUR
10+ 2.6 EUR
100+ 2 EUR
500+ 1.81 EUR
Mindestbestellmenge: 5
TLP5771H(TP,E docget.jsp?did=70655&prodName=TLP5771H
TLP5771H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.91 EUR
10+ 2.6 EUR
100+ 2 EUR
500+ 1.81 EUR
Mindestbestellmenge: 5
TC74VHC00FK(EL,K)
TC74VHC00FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
TC74VHC00FK(EL,K)
TC74VHC00FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
TODX2353(F) TODX2353(F)_datasheet_en_20150115.pdf?did=29677&prodName=TODX2353(F)
Hersteller: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 500KBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 500kbps
Produkt ist nicht verfügbar
TK8P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Produkt ist nicht verfügbar
TK8P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
auf Bestellung 1974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.94 EUR
10+ 2.44 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.39 EUR
Mindestbestellmenge: 6
MKZ5V6,LM(B
MKZ5V6,LM(B
Hersteller: Toshiba Semiconductor and Storage
Description: 5.6V ZENER DIODE, SOT23 PD (MAX)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Produkt ist nicht verfügbar
MKZ5V6,LM(B
MKZ5V6,LM(B
Hersteller: Toshiba Semiconductor and Storage
Description: 5.6V ZENER DIODE, SOT23 PD (MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Produkt ist nicht verfügbar
XCUZ5V6,H3XHF(B
Hersteller: Toshiba Semiconductor and Storage
Description: 5.6 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
XCUZ5V6,H3XHF(B
Hersteller: Toshiba Semiconductor and Storage
Description: 5.6 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TLP268J(T2-TPL,E TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J
TLP268J(T2-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: TRIAC COUPLER; 2MA LOW TRIGGER C
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.6 EUR
Mindestbestellmenge: 3000
TLP268J(T2-TPL,E TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J
TLP268J(T2-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: TRIAC COUPLER; 2MA LOW TRIGGER C
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.76 EUR
16+ 1.12 EUR
100+ 0.83 EUR
500+ 0.76 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 10
MG08SDA400A eHDD-MG08-D_Product-Manual_r0.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
MG08SDA400N eHDD-MG08-D_Product-Manual_r0.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
MG08SDA400E eHDD-MG08-D_Product-Manual_r0.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
TPC8228-H,LQ TPC8228-H_Rev2.0_1-7-14.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 3.8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
TPC8227-H,LQ TPC8227-H_Rev2.0_1-7-14.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 40V 5.1A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
7UL1G17FS,LF 7UL1G17FS_datasheet_en_20221021.pdf?did=61228&prodName=7UL1G17FS
7UL1G17FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.14 EUR
Mindestbestellmenge: 10000
7UL1G17FS,LF 7UL1G17FS_datasheet_en_20221021.pdf?did=61228&prodName=7UL1G17FS
7UL1G17FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
33+ 0.55 EUR
36+ 0.49 EUR
100+ 0.34 EUR
250+ 0.29 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
2500+ 0.16 EUR
5000+ 0.15 EUR
Mindestbestellmenge: 25
7UL1G08FS,RF(B datasheet_en_20221021.pdf?did=60334
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
7UL1G08FS,RF(B datasheet_en_20221021.pdf?did=60334
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
7UL1G04NX,ELF(S 7UL1G04NX_datasheet_en_20230912.pdf?did=154197&prodName=7UL1G04NX
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
7UL1G04NX,ELF(S 7UL1G04NX_datasheet_en_20230912.pdf?did=154197&prodName=7UL1G04NX
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
7UL1G125NX,ELF(S datasheet_en_20231129.pdf?did=154201
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6V
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
Produkt ist nicht verfügbar
7UL1G125NX,ELF(S datasheet_en_20231129.pdf?did=154201
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6V
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
Produkt ist nicht verfügbar
TK35S04K3L(T6L1,NQ Mosfets_Prod_Guide.pdf
TK35S04K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V
Produkt ist nicht verfügbar
TK35S04K3L(T6L1,NQ Mosfets_Prod_Guide.pdf
TK35S04K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.18 EUR
10+ 1.79 EUR
100+ 1.39 EUR
500+ 1.18 EUR
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TK33S10N1L,LQ TK33S10N1L_datasheet_en_20200624.pdf?did=36286&prodName=TK33S10N1L
TK33S10N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 1497 Stücke:
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6+2.96 EUR
10+ 2.46 EUR
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CMS16(TE12L,Q,M) CMS16_datasheet_en_20180404.pdf?did=6307&prodName=CMS16
CMS16(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 3A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
CMS16(TE12L,Q,M) CMS16_datasheet_en_20180404.pdf?did=6307&prodName=CMS16
CMS16(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 3A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 1178 Stücke:
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17+1.04 EUR
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TPCP8J01(TE85L,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 32V 5.5A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 32 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
Produkt ist nicht verfügbar
TK10A80W,S4X TK10A80W_datasheet_en_20161008.pdf?did=30614&prodName=TK10A80W
TK10A80W,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 9.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
auf Bestellung 49 Stücke:
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4+4.44 EUR
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TCR3UG1825A,LF TCR3UG1825A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG1825A
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
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Anzahl Preis ohne MwSt
5000+0.2 EUR
Mindestbestellmenge: 5000
TCR3UG1825A,LF TCR3UG1825A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG1825A
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
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Anzahl Preis ohne MwSt
24+0.74 EUR
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32+ 0.55 EUR
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TCK321G,LF TCK321G_datasheet_en_20151020.pdf?did=30721&prodName=TCK321G
TCK321G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Produkt ist nicht verfügbar
TCK321G,LF TCK321G_datasheet_en_20151020.pdf?did=30721&prodName=TCK321G
TCK321G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
auf Bestellung 4939 Stücke:
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8+2.34 EUR
10+ 2.09 EUR
25+ 1.98 EUR
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TK042N65Z5,S1F(S docget.jsp?did=154367&prodName=TK042N65Z5
TK042N65Z5,S1F(S
Hersteller: Toshiba Semiconductor and Storage
Description: 650V DTMOS6 HSD 42MOHM TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.85mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V
auf Bestellung 202 Stücke:
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1+18.06 EUR
30+ 14.42 EUR
120+ 12.9 EUR
TTC501,LF(B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.17 EUR
6000+ 0.16 EUR
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TTC501,LF(B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 6000 Stücke:
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23+0.77 EUR
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TC74VHC244F(EL,K,F
TC74VHC244F(EL,K,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
TC74VHC244F(EL,K,F
TC74VHC244F(EL,K,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
TCTH011AE,LF(CT
TCTH011AE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 8000 Stücke:
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Anzahl Preis ohne MwSt
4000+0.3 EUR
8000+ 0.26 EUR
Mindestbestellmenge: 4000
TCTH011AE,LF(CT
TCTH011AE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
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Anzahl Preis ohne MwSt
24+0.76 EUR
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TCTH022AE,LF(CT
TCTH022AE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 8000 Stücke:
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4000+0.31 EUR
8000+ 0.27 EUR
Mindestbestellmenge: 4000
TCTH022AE,LF(CT
TCTH022AE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 8000 Stücke:
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Anzahl Preis ohne MwSt
23+0.77 EUR
30+ 0.59 EUR
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TCTH012BE,LF(CT
TCTH012BE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.3 EUR
Mindestbestellmenge: 4000
TCTH012BE,LF(CT
TCTH012BE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 7990 Stücke:
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Anzahl Preis ohne MwSt
24+0.76 EUR
31+ 0.59 EUR
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TCTH012AE,LF(CT
TCTH012AE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.3 EUR
Mindestbestellmenge: 4000
TCTH012AE,LF(CT
TCTH012AE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
31+ 0.59 EUR
35+ 0.51 EUR
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TCTH021AE,LF(CT TCTH021AE_datasheet_en_20230425.pdf?did=149583&prodName=TCTH021AE
TCTH021AE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.3 EUR
Mindestbestellmenge: 4000
TCTH021AE,LF(CT TCTH021AE_datasheet_en_20230425.pdf?did=149583&prodName=TCTH021AE
TCTH021AE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 7980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
31+ 0.59 EUR
35+ 0.51 EUR
50+ 0.49 EUR
100+ 0.42 EUR
500+ 0.36 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 24
TCTH022BE,LF(CT TCTH021BE_datasheet_en_20230425.pdf?did=149583&prodName=TCTH021BE
TCTH022BE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.31 EUR
Mindestbestellmenge: 4000
TCTH022BE,LF(CT TCTH021BE_datasheet_en_20230425.pdf?did=149583&prodName=TCTH021BE
TCTH022BE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 7979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
30+ 0.59 EUR
35+ 0.51 EUR
50+ 0.49 EUR
100+ 0.42 EUR
500+ 0.37 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 23
TCTH011BE,LF(CT
TCTH011BE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.3 EUR
Mindestbestellmenge: 4000
TCTH011BE,LF(CT
TCTH011BE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 7975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
31+ 0.59 EUR
35+ 0.51 EUR
50+ 0.49 EUR
100+ 0.42 EUR
500+ 0.36 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 24
TCTH021BE,LF(CT TCTH021BE_datasheet_en_20230425.pdf?did=149583&prodName=TCTH021BE
TCTH021BE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.3 EUR
Mindestbestellmenge: 4000
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