Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13050) > Seite 211 nach 218

Wählen Sie Seite:   [  << Vorherige Seite ]  1 21 42 63 84 105 126 147 168 189 206 207 208 209 210 211 212 213 214 215 216 218  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
TLP4590A(LF5,F TLP4590A(LF5,F Toshiba Semiconductor and Storage TLP4590A_datasheet_en_20221028.pdf?did=70530&prodName=TLP4590A Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.84 EUR
10+ 5.49 EUR
25+ 4.88 EUR
50+ 4.64 EUR
Mindestbestellmenge: 4
TLP4590A(LF1,F TLP4590A(LF1,F Toshiba Semiconductor and Storage TLP4590A_datasheet_en_20221028.pdf?did=70530&prodName=TLP4590A Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.84 EUR
10+ 5.49 EUR
25+ 4.88 EUR
50+ 4.64 EUR
Mindestbestellmenge: 4
TLP4590AF(F TLP4590AF(F Toshiba Semiconductor and Storage TLP4590A_datasheet_en_20221028.pdf?did=70530&prodName=TLP4590A Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Load Current: 1.2 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.84 EUR
10+ 5.49 EUR
25+ 4.88 EUR
Mindestbestellmenge: 4
TB67S279FTG,EL TB67S279FTG,EL Toshiba Semiconductor and Storage TB67S279FTG_datasheet_en_20210201.pdf?did=58524&prodName=TB67S279FTG Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+3.03 EUR
Mindestbestellmenge: 4000
TB67S279FTG,EL TB67S279FTG,EL Toshiba Semiconductor and Storage TB67S279FTG_datasheet_en_20210201.pdf?did=58524&prodName=TB67S279FTG Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 10292 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.04 EUR
10+ 5.41 EUR
25+ 5.12 EUR
100+ 4.44 EUR
250+ 4.21 EUR
500+ 3.78 EUR
1000+ 3.18 EUR
Mindestbestellmenge: 3
TC74HC595AF(EL,F) TC74HC595AF(EL,F) Toshiba Semiconductor and Storage Description: IC 8-BIT SHIFT REGISTER 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Number of Bits per Element: 8
Produkt ist nicht verfügbar
TC74HC595AF(EL,F) TC74HC595AF(EL,F) Toshiba Semiconductor and Storage Description: IC 8-BIT SHIFT REGISTER 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Number of Bits per Element: 8
Produkt ist nicht verfügbar
XPJR6604PB,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=153003&prodName=XPJR6604PB Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+2.27 EUR
Mindestbestellmenge: 1500
XPJR6604PB,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=153003&prodName=XPJR6604PB Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.61 EUR
10+ 4.15 EUR
25+ 3.91 EUR
100+ 3.33 EUR
250+ 3.13 EUR
500+ 2.74 EUR
Mindestbestellmenge: 4
TC4001BF(EL,N,F) TC4001BF(EL,N,F) Toshiba Semiconductor and Storage TC4001BF_datasheet_en_20160112.pdf?did=14370&prodName=TC4001BF Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
TC4001BF(EL,N,F) TC4001BF(EL,N,F) Toshiba Semiconductor and Storage TC4001BF_datasheet_en_20160112.pdf?did=14370&prodName=TC4001BF Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
EVB-TCKE805NA EVB-TCKE805NA Toshiba Semiconductor and Storage Description: EVAL-BRD 4.4V TO 18V, 5A MAX, AD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Utilized IC / Part: TCKE805NA
Supplied Contents: Board(s)
Primary Attributes: 4.4V ~ 18V Input Voltage
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+135.7 EUR
TPCC8105,L1Q Toshiba Semiconductor and Storage TPCC8105_datasheet_en_20180515.pdf?did=6229&prodName=TPCC8105 Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Produkt ist nicht verfügbar
TPCC8105,L1Q Toshiba Semiconductor and Storage TPCC8105_datasheet_en_20180515.pdf?did=6229&prodName=TPCC8105 Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Produkt ist nicht verfügbar
TPCC8136.LQ TPCC8136.LQ Toshiba Semiconductor and Storage Description: MOSFET P-CH 20V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
Produkt ist nicht verfügbar
TK31A60W,S4VX TK31A60W,S4VX Toshiba Semiconductor and Storage TK31A60W_datasheet_en_20131226.pdf?did=13492&prodName=TK31A60W Description: MOSFET N-CH 600V 30.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.69 EUR
Mindestbestellmenge: 2
RN2412,LXHF RN2412,LXHF Toshiba Semiconductor and Storage RN2412_datasheet_en_20210830.pdf?did=18881&prodName=RN2412 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN2412,LXHF RN2412,LXHF Toshiba Semiconductor and Storage RN2412_datasheet_en_20210830.pdf?did=18881&prodName=RN2412 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN2413,LXHF RN2413,LXHF Toshiba Semiconductor and Storage RN2413_datasheet_en_20210830.pdf?did=18881&prodName=RN2413 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
Mindestbestellmenge: 3000
RN2413,LXHF RN2413,LXHF Toshiba Semiconductor and Storage RN2413_datasheet_en_20210830.pdf?did=18881&prodName=RN2413 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
TCK322G,LF TCK322G,LF Toshiba Semiconductor and Storage TCK321G_datasheet_en_20151020.pdf?did=30721&prodName=TCK321G Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.98 EUR
Mindestbestellmenge: 5000
TCK322G,LF TCK322G,LF Toshiba Semiconductor and Storage TCK321G_datasheet_en_20151020.pdf?did=30721&prodName=TCK321G Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.41 EUR
10+ 2.16 EUR
25+ 2.05 EUR
100+ 1.69 EUR
250+ 1.58 EUR
500+ 1.39 EUR
1000+ 1.1 EUR
2500+ 1.03 EUR
Mindestbestellmenge: 8
TC75S55FU(TE85L,F) TC75S55FU(TE85L,F) Toshiba Semiconductor and Storage TC75S55F_datasheet_en_20190911.pdf?did=21009&prodName=TC75S55F Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
Produkt ist nicht verfügbar
TC75S55FU(TE85L,F) TC75S55FU(TE85L,F) Toshiba Semiconductor and Storage TC75S55F_datasheet_en_20190911.pdf?did=21009&prodName=TC75S55F Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
26+ 0.7 EUR
28+ 0.64 EUR
100+ 0.47 EUR
250+ 0.43 EUR
500+ 0.36 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 21
TLP632(GRL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(BL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(GB-TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
TLP632(GB-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(GR-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(GR-TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
TLP632(HO-GB,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(GB-LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TJ10S04M3L(T6L1,NQ TJ10S04M3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=11298&prodName=TJ10S04M3L Description: MOSFET P-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Produkt ist nicht verfügbar
TJ10S04M3L(T6L1,NQ TJ10S04M3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=11298&prodName=TJ10S04M3L Description: MOSFET P-CH 40V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.13 EUR
11+ 1.75 EUR
100+ 1.36 EUR
500+ 1.15 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 9
TPD4163K,F Toshiba Semiconductor and Storage Description: 600V; IPD; 1A; HDIP30 INTELLIGEN
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.38 EUR
15+ 9.37 EUR
30+ 8.94 EUR
105+ 7.76 EUR
255+ 7.41 EUR
Mindestbestellmenge: 2
TPD4164K,F Toshiba Semiconductor and Storage Description: 600V; IPD; 2A; HDIP30 INTELLIGEN
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.28 EUR
15+ 11.09 EUR
30+ 10.58 EUR
105+ 9.18 EUR
255+ 8.77 EUR
Mindestbestellmenge: 2
SSM6K809R,LF SSM6K809R,LF Toshiba Semiconductor and Storage SSM6K809R_datasheet_en_20210528.pdf?did=63955&prodName=SSM6K809R Description: SMALL SIGNAL MOSFET N-CH VDSS=60
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.28 EUR
Mindestbestellmenge: 3000
SSM6K809R,LF SSM6K809R,LF Toshiba Semiconductor and Storage SSM6K809R_datasheet_en_20210528.pdf?did=63955&prodName=SSM6K809R Description: SMALL SIGNAL MOSFET N-CH VDSS=60
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
26+ 0.7 EUR
100+ 0.49 EUR
500+ 0.38 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
TLP3553(TP1,F) TLP3553(TP1,F) Toshiba Semiconductor and Storage TLP3553_datasheet_en_20200325.pdf?did=11945&prodName=TLP3553 Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
Produkt ist nicht verfügbar
TLP3553(TP1,F) TLP3553(TP1,F) Toshiba Semiconductor and Storage TLP3553_datasheet_en_20200325.pdf?did=11945&prodName=TLP3553 Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.28 EUR
10+ 4.94 EUR
25+ 4.39 EUR
50+ 4.17 EUR
100+ 3.95 EUR
250+ 3.52 EUR
500+ 3.3 EUR
Mindestbestellmenge: 4
DF5G6M4N,LF DF5G6M4N,LF Toshiba Semiconductor and Storage DF5G6M4N_datasheet_en_20220126.pdf?did=57534&prodName=DF5G6M4N Description: TVS DIODE 5.5VWM 15VC 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 5-DFN (1.3x0.8)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.16 EUR
Mindestbestellmenge: 5000
DF5G6M4N,LF DF5G6M4N,LF Toshiba Semiconductor and Storage DF5G6M4N_datasheet_en_20220126.pdf?did=57534&prodName=DF5G6M4N Description: TVS DIODE 5.5VWM 15VC 5DFN
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 5-DFN (1.3x0.8)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
37+ 0.48 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 29
TLP3906(TPR,E TLP3906(TPR,E Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP3906(TPR,E TLP3906(TPR,E Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 1179 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.1 EUR
10+ 1.97 EUR
100+ 1.46 EUR
500+ 1.34 EUR
1000+ 1.1 EUR
Mindestbestellmenge: 6
CUHS20S40,H3F CUHS20S40,H3F Toshiba Semiconductor and Storage CUHS20S40_datasheet_en_20190925.pdf?did=63610&prodName=CUHS20S40 Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+ 0.15 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 3000
CUHS20S40,H3F CUHS20S40,H3F Toshiba Semiconductor and Storage CUHS20S40_datasheet_en_20190925.pdf?did=63610&prodName=CUHS20S40 Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
auf Bestellung 37471 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
39+ 0.46 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
CUHS20F60,H3F Toshiba Semiconductor and Storage docget.jsp?did=70188&prodName=CUHS20F60 Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 2 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Produkt ist nicht verfügbar
CUHS20F60,H3F Toshiba Semiconductor and Storage docget.jsp?did=70188&prodName=CUHS20F60 Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 2 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
auf Bestellung 2029 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
39+ 0.45 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
XPH2R106NC,L1XHQ XPH2R106NC,L1XHQ Toshiba Semiconductor and Storage XPN12006NC_catalog_20160325_ALQ00006.pdf?did=36157&prodName=XPN12006NC Description: MOSFET N-CH 60V 110A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.47 EUR
Mindestbestellmenge: 5000
XPH2R106NC,L1XHQ XPH2R106NC,L1XHQ Toshiba Semiconductor and Storage XPN12006NC_catalog_20160325_ALQ00006.pdf?did=36157&prodName=XPN12006NC Description: MOSFET N-CH 60V 110A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8775 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.4 EUR
10+ 2.81 EUR
100+ 2.24 EUR
500+ 1.9 EUR
1000+ 1.61 EUR
2000+ 1.53 EUR
Mindestbestellmenge: 6
TK5P65W,RQ Toshiba Semiconductor and Storage TK5P65W_datasheet_en_20151225.pdf Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
auf Bestellung 1987 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
11+ 1.71 EUR
100+ 1.33 EUR
500+ 1.12 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 9
TLP2766A(LF4,E Toshiba Semiconductor and Storage TLP2766A_datasheet_en_20180522.pdf?did=61849&prodName=TLP2766A Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.8V (Max)
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.66 EUR
11+ 1.68 EUR
125+ 1.24 EUR
Mindestbestellmenge: 7
RN4983FE,LXHF(CT RN4983FE,LXHF(CT Toshiba Semiconductor and Storage RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
Mindestbestellmenge: 4000
RN4983FE,LXHF(CT RN4983FE,LXHF(CT Toshiba Semiconductor and Storage RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
43+ 0.42 EUR
100+ 0.21 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 30
TK3P50D,RQ(S TK3P50D,RQ(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 500V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
TK3P50D,RQ(S TK3P50D,RQ(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 500V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
12+ 1.5 EUR
100+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 10
HN1D02FU,LF HN1D02FU,LF Toshiba Semiconductor and Storage HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
HN1D02FU,LF HN1D02FU,LF Toshiba Semiconductor and Storage HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3005 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+ 0.49 EUR
100+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
CRZ16(TE85L,Q,M) CRZ16(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 16V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Produkt ist nicht verfügbar
TLP4590A(LF5,F TLP4590A_datasheet_en_20221028.pdf?did=70530&prodName=TLP4590A
TLP4590A(LF5,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.84 EUR
10+ 5.49 EUR
25+ 4.88 EUR
50+ 4.64 EUR
Mindestbestellmenge: 4
TLP4590A(LF1,F TLP4590A_datasheet_en_20221028.pdf?did=70530&prodName=TLP4590A
TLP4590A(LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.84 EUR
10+ 5.49 EUR
25+ 4.88 EUR
50+ 4.64 EUR
Mindestbestellmenge: 4
TLP4590AF(F TLP4590A_datasheet_en_20221028.pdf?did=70530&prodName=TLP4590A
TLP4590AF(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Load Current: 1.2 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.84 EUR
10+ 5.49 EUR
25+ 4.88 EUR
Mindestbestellmenge: 4
TB67S279FTG,EL TB67S279FTG_datasheet_en_20210201.pdf?did=58524&prodName=TB67S279FTG
TB67S279FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+3.03 EUR
Mindestbestellmenge: 4000
TB67S279FTG,EL TB67S279FTG_datasheet_en_20210201.pdf?did=58524&prodName=TB67S279FTG
TB67S279FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 10292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.04 EUR
10+ 5.41 EUR
25+ 5.12 EUR
100+ 4.44 EUR
250+ 4.21 EUR
500+ 3.78 EUR
1000+ 3.18 EUR
Mindestbestellmenge: 3
TC74HC595AF(EL,F)
TC74HC595AF(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC 8-BIT SHIFT REGISTER 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Number of Bits per Element: 8
Produkt ist nicht verfügbar
TC74HC595AF(EL,F)
TC74HC595AF(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC 8-BIT SHIFT REGISTER 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Number of Bits per Element: 8
Produkt ist nicht verfügbar
XPJR6604PB,LXHQ docget.jsp?did=153003&prodName=XPJR6604PB
Hersteller: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+2.27 EUR
Mindestbestellmenge: 1500
XPJR6604PB,LXHQ docget.jsp?did=153003&prodName=XPJR6604PB
Hersteller: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.61 EUR
10+ 4.15 EUR
25+ 3.91 EUR
100+ 3.33 EUR
250+ 3.13 EUR
500+ 2.74 EUR
Mindestbestellmenge: 4
TC4001BF(EL,N,F) TC4001BF_datasheet_en_20160112.pdf?did=14370&prodName=TC4001BF
TC4001BF(EL,N,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
TC4001BF(EL,N,F) TC4001BF_datasheet_en_20160112.pdf?did=14370&prodName=TC4001BF
TC4001BF(EL,N,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
EVB-TCKE805NA
EVB-TCKE805NA
Hersteller: Toshiba Semiconductor and Storage
Description: EVAL-BRD 4.4V TO 18V, 5A MAX, AD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Utilized IC / Part: TCKE805NA
Supplied Contents: Board(s)
Primary Attributes: 4.4V ~ 18V Input Voltage
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+135.7 EUR
TPCC8105,L1Q TPCC8105_datasheet_en_20180515.pdf?did=6229&prodName=TPCC8105
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Produkt ist nicht verfügbar
TPCC8105,L1Q TPCC8105_datasheet_en_20180515.pdf?did=6229&prodName=TPCC8105
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Produkt ist nicht verfügbar
TPCC8136.LQ
TPCC8136.LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
Produkt ist nicht verfügbar
TK31A60W,S4VX TK31A60W_datasheet_en_20131226.pdf?did=13492&prodName=TK31A60W
TK31A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.69 EUR
Mindestbestellmenge: 2
RN2412,LXHF RN2412_datasheet_en_20210830.pdf?did=18881&prodName=RN2412
RN2412,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN2412,LXHF RN2412_datasheet_en_20210830.pdf?did=18881&prodName=RN2412
RN2412,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN2413,LXHF RN2413_datasheet_en_20210830.pdf?did=18881&prodName=RN2413
RN2413,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
Mindestbestellmenge: 3000
RN2413,LXHF RN2413_datasheet_en_20210830.pdf?did=18881&prodName=RN2413
RN2413,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
TCK322G,LF TCK321G_datasheet_en_20151020.pdf?did=30721&prodName=TCK321G
TCK322G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.98 EUR
Mindestbestellmenge: 5000
TCK322G,LF TCK321G_datasheet_en_20151020.pdf?did=30721&prodName=TCK321G
TCK322G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.41 EUR
10+ 2.16 EUR
25+ 2.05 EUR
100+ 1.69 EUR
250+ 1.58 EUR
500+ 1.39 EUR
1000+ 1.1 EUR
2500+ 1.03 EUR
Mindestbestellmenge: 8
TC75S55FU(TE85L,F) TC75S55F_datasheet_en_20190911.pdf?did=21009&prodName=TC75S55F
TC75S55FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
Produkt ist nicht verfügbar
TC75S55FU(TE85L,F) TC75S55F_datasheet_en_20190911.pdf?did=21009&prodName=TC75S55F
TC75S55FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
26+ 0.7 EUR
28+ 0.64 EUR
100+ 0.47 EUR
250+ 0.43 EUR
500+ 0.36 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 21
TLP632(GRL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(BL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(GB-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
TLP632(GB-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(GR-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(GR-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
TLP632(HO-GB,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(GB-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TLP632(LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
TJ10S04M3L(T6L1,NQ docget.jsp?did=11298&prodName=TJ10S04M3L
TJ10S04M3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Produkt ist nicht verfügbar
TJ10S04M3L(T6L1,NQ docget.jsp?did=11298&prodName=TJ10S04M3L
TJ10S04M3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.13 EUR
11+ 1.75 EUR
100+ 1.36 EUR
500+ 1.15 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 9
TPD4163K,F
Hersteller: Toshiba Semiconductor and Storage
Description: 600V; IPD; 1A; HDIP30 INTELLIGEN
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.38 EUR
15+ 9.37 EUR
30+ 8.94 EUR
105+ 7.76 EUR
255+ 7.41 EUR
Mindestbestellmenge: 2
TPD4164K,F
Hersteller: Toshiba Semiconductor and Storage
Description: 600V; IPD; 2A; HDIP30 INTELLIGEN
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.28 EUR
15+ 11.09 EUR
30+ 10.58 EUR
105+ 9.18 EUR
255+ 8.77 EUR
Mindestbestellmenge: 2
SSM6K809R,LF SSM6K809R_datasheet_en_20210528.pdf?did=63955&prodName=SSM6K809R
SSM6K809R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH VDSS=60
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.28 EUR
Mindestbestellmenge: 3000
SSM6K809R,LF SSM6K809R_datasheet_en_20210528.pdf?did=63955&prodName=SSM6K809R
SSM6K809R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH VDSS=60
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
26+ 0.7 EUR
100+ 0.49 EUR
500+ 0.38 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
TLP3553(TP1,F) TLP3553_datasheet_en_20200325.pdf?did=11945&prodName=TLP3553
TLP3553(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
Produkt ist nicht verfügbar
TLP3553(TP1,F) TLP3553_datasheet_en_20200325.pdf?did=11945&prodName=TLP3553
TLP3553(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.28 EUR
10+ 4.94 EUR
25+ 4.39 EUR
50+ 4.17 EUR
100+ 3.95 EUR
250+ 3.52 EUR
500+ 3.3 EUR
Mindestbestellmenge: 4
DF5G6M4N,LF DF5G6M4N_datasheet_en_20220126.pdf?did=57534&prodName=DF5G6M4N
DF5G6M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 5-DFN (1.3x0.8)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.16 EUR
Mindestbestellmenge: 5000
DF5G6M4N,LF DF5G6M4N_datasheet_en_20220126.pdf?did=57534&prodName=DF5G6M4N
DF5G6M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC 5DFN
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 5-DFN (1.3x0.8)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
37+ 0.48 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 29
TLP3906(TPR,E
TLP3906(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP3906(TPR,E
TLP3906(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 1179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.1 EUR
10+ 1.97 EUR
100+ 1.46 EUR
500+ 1.34 EUR
1000+ 1.1 EUR
Mindestbestellmenge: 6
CUHS20S40,H3F CUHS20S40_datasheet_en_20190925.pdf?did=63610&prodName=CUHS20S40
CUHS20S40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
6000+ 0.15 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 3000
CUHS20S40,H3F CUHS20S40_datasheet_en_20190925.pdf?did=63610&prodName=CUHS20S40
CUHS20S40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
auf Bestellung 37471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
39+ 0.46 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
CUHS20F60,H3F docget.jsp?did=70188&prodName=CUHS20F60
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 2 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Produkt ist nicht verfügbar
CUHS20F60,H3F docget.jsp?did=70188&prodName=CUHS20F60
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 2 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
auf Bestellung 2029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
39+ 0.45 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
XPH2R106NC,L1XHQ XPN12006NC_catalog_20160325_ALQ00006.pdf?did=36157&prodName=XPN12006NC
XPH2R106NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 110A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.47 EUR
Mindestbestellmenge: 5000
XPH2R106NC,L1XHQ XPN12006NC_catalog_20160325_ALQ00006.pdf?did=36157&prodName=XPN12006NC
XPH2R106NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 110A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.4 EUR
10+ 2.81 EUR
100+ 2.24 EUR
500+ 1.9 EUR
1000+ 1.61 EUR
2000+ 1.53 EUR
Mindestbestellmenge: 6
TK5P65W,RQ TK5P65W_datasheet_en_20151225.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
auf Bestellung 1987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.08 EUR
11+ 1.71 EUR
100+ 1.33 EUR
500+ 1.12 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 9
TLP2766A(LF4,E TLP2766A_datasheet_en_20180522.pdf?did=61849&prodName=TLP2766A
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.8V (Max)
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.66 EUR
11+ 1.68 EUR
125+ 1.24 EUR
Mindestbestellmenge: 7
RN4983FE,LXHF(CT RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE
RN4983FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.13 EUR
Mindestbestellmenge: 4000
RN4983FE,LXHF(CT RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE
RN4983FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
43+ 0.42 EUR
100+ 0.21 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 30
TK3P50D,RQ(S Mosfets_Prod_Guide.pdf
TK3P50D,RQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
TK3P50D,RQ(S Mosfets_Prod_Guide.pdf
TK3P50D,RQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.83 EUR
12+ 1.5 EUR
100+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 10
HN1D02FU,LF HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU
HN1D02FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.13 EUR
Mindestbestellmenge: 3000
HN1D02FU,LF HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU
HN1D02FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.49 EUR
100+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
CRZ16(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ16(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 16V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 21 42 63 84 105 126 147 168 189 206 207 208 209 210 211 212 213 214 215 216 218  [ Nächste Seite >> ]