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MKZ10V,LM(B MKZ10V,LM(B Toshiba Semiconductor and Storage Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
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63+0.33 EUR
66+0.32 EUR
116+0.18 EUR
250+0.13 EUR
500+0.11 EUR
1000+0.076 EUR
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TPH2R805PL,LQ TPH2R805PL,LQ Toshiba Semiconductor and Storage TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
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TPH2R805PL,LQ TPH2R805PL,LQ Toshiba Semiconductor and Storage TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
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74LCX541FT(AE) 74LCX541FT(AE) Toshiba Semiconductor and Storage docget.jsp?did=15179&prodName=74LCX541FT Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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74LCX541FT(AE) 74LCX541FT(AE) Toshiba Semiconductor and Storage docget.jsp?did=15179&prodName=74LCX541FT Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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250+0.5 EUR
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MG08SDP600A Toshiba Semiconductor and Storage eHDD-MG08-D_Product-Manual_r0.pdf Description: HDD 6TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TPD4165K,F TPD4165K,F Toshiba Semiconductor and Storage TPD4165K_datasheet_en_20240115.pdf?did=156295&prodName=TPD4165K Description: 600V, IPD, 3A, HDIP30
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 30-HDIP
Voltage - Load: 50V ~ 450V
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 135°C (TJ)
Interface: PWM
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 30-PowerDIP Module
Packaging: Tube
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TC74VHC08F(EL,K,F) TC74VHC08F(EL,K,F) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TC74VHC08FK(EL,K) TC74VHC08FK(EL,K) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TC74VHC08FK(EL,K) TC74VHC08FK(EL,K) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC74VHC08FTELM TC74VHC08FTELM Toshiba Semiconductor and Storage TC74VHC08F,FN,FT,FK.pdf Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC74VHC08FTELM TC74VHC08FTELM Toshiba Semiconductor and Storage TC74VHC08F,FN,FT,FK.pdf Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TPH8R808QM,LQ Toshiba Semiconductor and Storage Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
Produkt ist nicht verfügbar
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TPH8R808QM,LQ Toshiba Semiconductor and Storage Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
Produkt ist nicht verfügbar
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TK5P60W5,RVQ Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
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TK5P60W5,RVQ Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
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TK16G60W5,RVQ TK16G60W5,RVQ Toshiba Semiconductor and Storage docget.jsp?did=14277&prodName=TK16G60W5 Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
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TK16G60W5,RVQ TK16G60W5,RVQ Toshiba Semiconductor and Storage docget.jsp?did=14277&prodName=TK16G60W5 Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
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TK14V65W,LQ TK14V65W,LQ Toshiba Semiconductor and Storage TK14V65W_datasheet_en_20151223.pdf?did=30287&prodName=TK14V65W Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
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TK14V65W,LQ TK14V65W,LQ Toshiba Semiconductor and Storage TK14V65W_datasheet_en_20151223.pdf?did=30287&prodName=TK14V65W Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
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100+4.82 EUR
500+4 EUR
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TK25V60X5,LQ TK25V60X5,LQ Toshiba Semiconductor and Storage docget.jsp?did=15560&prodName=TK25V60X5 Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Produkt ist nicht verfügbar
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TK25V60X5,LQ TK25V60X5,LQ Toshiba Semiconductor and Storage docget.jsp?did=15560&prodName=TK25V60X5 Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
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DCL540C01(T,E DCL540C01(T,E Toshiba Semiconductor and Storage DCL540C01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540C01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
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DCL540C01(T,E DCL540C01(T,E Toshiba Semiconductor and Storage DCL540C01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540C01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 2935 Stücke:
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2+12.35 EUR
10+8.73 EUR
100+7.15 EUR
500+6.03 EUR
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DCL540L01(T,E DCL540L01(T,E Toshiba Semiconductor and Storage DCL540L01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540L01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
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1500+5.08 EUR
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DCL540L01(T,E DCL540L01(T,E Toshiba Semiconductor and Storage DCL540L01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540L01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
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2+11.1 EUR
10+7.77 EUR
100+6.07 EUR
500+5.39 EUR
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DCL540H01(T,E DCL540H01(T,E Toshiba Semiconductor and Storage DCL540H01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540H01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
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1500+5.53 EUR
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DCL540H01(T,E DCL540H01(T,E Toshiba Semiconductor and Storage DCL540H01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540H01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
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2+12.35 EUR
10+8.73 EUR
100+7.15 EUR
500+6.03 EUR
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DCL540D01(T,E DCL540D01(T,E Toshiba Semiconductor and Storage DCL540D01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540D01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+5.53 EUR
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DCL540D01(T,E DCL540D01(T,E Toshiba Semiconductor and Storage DCL540D01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540D01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.35 EUR
10+8.73 EUR
100+7.15 EUR
500+6.03 EUR
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TC62D776CFNAG,CEBH Toshiba Semiconductor and Storage TC62D776CFNAG_10-01-14.pdf Description: IC LED DRIVER
Packaging: Bulk
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C
Applications: LED Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Shift Register
Supplier Device Package: 24-SSOP
Dimming: No
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
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TPH3R003PL,LQ TPH3R003PL,LQ Toshiba Semiconductor and Storage TPH3R003PL_datasheet_en_20161019.pdf?did=55430&prodName=TPH3R003PL Description: MOSFET N-CH 30V 88A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
Produkt ist nicht verfügbar
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TPH3R003PL,LQ TPH3R003PL,LQ Toshiba Semiconductor and Storage TPH3R003PL_datasheet_en_20161019.pdf?did=55430&prodName=TPH3R003PL Description: MOSFET N-CH 30V 88A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 54 Stücke:
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8+2.67 EUR
13+1.68 EUR
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TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=11301&prodName=TJ60S04M3L Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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2000+1.11 EUR
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TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=11301&prodName=TJ60S04M3L Description: MOSFET P-CH 40V 60A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2222 Stücke:
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6+3.81 EUR
10+2.44 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.19 EUR
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CMZ13(TE12L,Q,M) CMZ13(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12 Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Produkt ist nicht verfügbar
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CMZ13(TE12L,Q,M) CMZ13(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12 Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
auf Bestellung 1725 Stücke:
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25+0.86 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.38 EUR
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MG04SCA40EA Toshiba Semiconductor and Storage eHDD-MG04SCAxxEx-product-overview.pdf Description: HDD 4TB 3.5" SAS 5V/12V
Operating Temperature: 5°C ~ 55°C
Type: SAS
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Produkt ist nicht verfügbar
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MG04SCA60EA Toshiba Semiconductor and Storage eHDD-MG04SCAxxEx-product-overview.pdf Description: HDD 6TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TOTX1350A(F) Toshiba Semiconductor and Storage TOTX1350F.pdf Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
Produkt ist nicht verfügbar
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TOTX1350A(V,F) Toshiba Semiconductor and Storage TOTX1350F.pdf Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
Produkt ist nicht verfügbar
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TORX1350A(V,F) Toshiba Semiconductor and Storage docget.jsp?did=57929&prodName=TORX1350A%28V%2CF%29 Description: FIBER OPTIC RECEIVER 500KBPS
Packaging: Tube
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Power - Minimum Receivable: -27dBm
Current - Supply: 20 mA
Produkt ist nicht verfügbar
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TLP3052A(D4,F TLP3052A(D4,F Toshiba Semiconductor and Storage docget.jsp?did=30349&prodName=TLP3052AF Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP3052AF(D4,F TLP3052AF(D4,F Toshiba Semiconductor and Storage docget.jsp?did=30349&prodName=TLP3052AF Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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7UL3G14FK,LF 7UL3G14FK,LF Toshiba Semiconductor and Storage docget.jsp?did=147405&prodName=7UL3G14FK Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
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3000+0.18 EUR
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7UL3G14FK,LF 7UL3G14FK,LF Toshiba Semiconductor and Storage docget.jsp?did=147405&prodName=7UL3G14FK Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
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48+0.44 EUR
69+0.31 EUR
78+0.27 EUR
100+0.24 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
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TCR1HF18B,LM(CT Toshiba Semiconductor and Storage Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR1HF18B,LM(CT Toshiba Semiconductor and Storage Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2945 Stücke:
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28+0.75 EUR
31+0.69 EUR
100+0.51 EUR
250+0.46 EUR
500+0.38 EUR
1000+0.29 EUR
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TLP7830(D4-TP4,E TLP7830(D4-TP4,E Toshiba Semiconductor and Storage Description: IC OP AMP ISOLATION SO8
Number of Channels: 1
Supplier Device Package: 8-SO
Voltage Supply Source: Dual Supply
Resolution (Bits): 16 b
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Data Interface: Serial
Type: Modulator
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP3107(F Toshiba Semiconductor and Storage TLP3107_datasheet_en_20200217.pdf?did=14441&prodName=TLP3107 Description: SSR RELAY SPST-NO 3.3A 0-60V
Packaging: Tube
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.3 A
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 60 mOhms
Produkt ist nicht verfügbar
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TK065Z65Z,S1F TK065Z65Z,S1F Toshiba Semiconductor and Storage TK065Z65Z_datasheet_en_20181128.pdf?did=63664&prodName=TK065Z65Z Description: POWER MOSFET TRANSISTOR TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TO-247-4L(T)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
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TC7SET00F,LJ(CT TC7SET00F,LJ(CT Toshiba Semiconductor and Storage TC7SET00F_datasheet_en_20171221.pdf?did=20073&prodName=TC7SET00F Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SET00F,LJ(CT TC7SET00F,LJ(CT Toshiba Semiconductor and Storage TC7SET00F_datasheet_en_20171221.pdf?did=20073&prodName=TC7SET00F Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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TB67H481FTG(O,EL) Toshiba Semiconductor and Storage Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
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TB67H481FTG(O,EL) Toshiba Semiconductor and Storage Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
auf Bestellung 4000 Stücke:
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25+3.32 EUR
100+2.71 EUR
250+2.42 EUR
500+2.24 EUR
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TB67S569FTG(O,R,EL TB67S569FTG(O,R,EL Toshiba Semiconductor and Storage TB67S569FTG_datasheet_en_20241127.pdf?did=153337&prodName=TB67S569FTG&returnFlg=false Description: STEPPER MOTOR DRIVER, 40V, 2A, 1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 34V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 40V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TB67S569FTG(O,R,EL TB67S569FTG(O,R,EL Toshiba Semiconductor and Storage TB67S569FTG_datasheet_en_20241127.pdf?did=153337&prodName=TB67S569FTG&returnFlg=false Description: STEPPER MOTOR DRIVER, 40V, 2A, 1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 34V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 40V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 3485 Stücke:
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6+4.08 EUR
10+3.02 EUR
25+2.76 EUR
100+2.48 EUR
250+2.33 EUR
500+2.25 EUR
1000+2.18 EUR
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TB67S589FTG(O,R,EL TB67S589FTG(O,R,EL Toshiba Semiconductor and Storage TB67S589FTG_datasheet_en_20241127.pdf?did=153431&prodName=TB67S589FTG&returnFlg=false Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TB67S589FTG(O,R,EL TB67S589FTG(O,R,EL Toshiba Semiconductor and Storage TB67S589FTG_datasheet_en_20241127.pdf?did=153431&prodName=TB67S589FTG&returnFlg=false Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 3432 Stücke:
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5+4.38 EUR
10+3.26 EUR
25+2.98 EUR
100+2.67 EUR
250+2.52 EUR
500+2.43 EUR
1000+2.36 EUR
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TLP3083F(TP4,F TLP3083F(TP4,F Toshiba Semiconductor and Storage docget.jsp?did=30348&prodName=TLP3083F Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 5000 Stücke:
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1000+1.5 EUR
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3000+1.39 EUR
5000+1.34 EUR
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MKZ10V,LM(B
MKZ10V,LM(B
Hersteller: Toshiba Semiconductor and Storage
Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
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56+0.38 EUR
63+0.33 EUR
66+0.32 EUR
116+0.18 EUR
250+0.13 EUR
500+0.11 EUR
1000+0.076 EUR
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TPH2R805PL,LQ TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL
TPH2R805PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
Produkt ist nicht verfügbar
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TPH2R805PL,LQ TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL
TPH2R805PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
auf Bestellung 2980 Stücke:
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6+3.97 EUR
10+2.53 EUR
100+1.71 EUR
500+1.36 EUR
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74LCX541FT(AE) docget.jsp?did=15179&prodName=74LCX541FT
74LCX541FT(AE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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74LCX541FT(AE) docget.jsp?did=15179&prodName=74LCX541FT
74LCX541FT(AE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3867 Stücke:
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1000+0.39 EUR
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MG08SDP600A eHDD-MG08-D_Product-Manual_r0.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TPD4165K,F TPD4165K_datasheet_en_20240115.pdf?did=156295&prodName=TPD4165K
TPD4165K,F
Hersteller: Toshiba Semiconductor and Storage
Description: 600V, IPD, 3A, HDIP30
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 30-HDIP
Voltage - Load: 50V ~ 450V
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 135°C (TJ)
Interface: PWM
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 30-PowerDIP Module
Packaging: Tube
auf Bestellung 183 Stücke:
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2+13.04 EUR
15+9.72 EUR
30+9.2 EUR
105+8.48 EUR
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TC74VHC08F(EL,K,F)
TC74VHC08F(EL,K,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC74VHC08FK(EL,K)
TC74VHC08FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC74VHC08FK(EL,K)
TC74VHC08FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC74VHC08FTELM TC74VHC08F,FN,FT,FK.pdf
TC74VHC08FTELM
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC74VHC08FTELM TC74VHC08F,FN,FT,FK.pdf
TC74VHC08FTELM
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TPH8R808QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
Produkt ist nicht verfügbar
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TPH8R808QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
Produkt ist nicht verfügbar
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TK5P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.01 EUR
Mindestbestellmenge: 2000 Stücke
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TK5P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
11+2 EUR
100+1.56 EUR
500+1.32 EUR
1000+1.07 EUR
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TK16G60W5,RVQ docget.jsp?did=14277&prodName=TK16G60W5
TK16G60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.46 EUR
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TK16G60W5,RVQ docget.jsp?did=14277&prodName=TK16G60W5
TK16G60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 1288 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8 EUR
10+5.28 EUR
100+3.72 EUR
500+3.61 EUR
Mindestbestellmenge: 3 Stücke
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TK14V65W,LQ TK14V65W_datasheet_en_20151223.pdf?did=30287&prodName=TK14V65W
TK14V65W,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TK14V65W,LQ TK14V65W_datasheet_en_20151223.pdf?did=30287&prodName=TK14V65W
TK14V65W,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 2394 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.14 EUR
10+6.75 EUR
100+4.82 EUR
500+4 EUR
1000+3.89 EUR
Mindestbestellmenge: 3 Stücke
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TK25V60X5,LQ docget.jsp?did=15560&prodName=TK25V60X5
TK25V60X5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TK25V60X5,LQ docget.jsp?did=15560&prodName=TK25V60X5
TK25V60X5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 2483 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.9 EUR
10+8.7 EUR
100+6.33 EUR
500+5.43 EUR
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DCL540C01(T,E DCL540C01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540C01
DCL540C01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+5.53 EUR
Mindestbestellmenge: 1500 Stücke
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DCL540C01(T,E DCL540C01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540C01
DCL540C01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.35 EUR
10+8.73 EUR
100+7.15 EUR
500+6.03 EUR
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DCL540L01(T,E DCL540L01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540L01
DCL540L01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+5.08 EUR
Mindestbestellmenge: 1500 Stücke
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DCL540L01(T,E DCL540L01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540L01
DCL540L01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.1 EUR
10+7.77 EUR
100+6.07 EUR
500+5.39 EUR
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DCL540H01(T,E DCL540H01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540H01
DCL540H01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+5.53 EUR
Mindestbestellmenge: 1500 Stücke
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DCL540H01(T,E DCL540H01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540H01
DCL540H01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.35 EUR
10+8.73 EUR
100+7.15 EUR
500+6.03 EUR
Mindestbestellmenge: 2 Stücke
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DCL540D01(T,E DCL540D01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540D01
DCL540D01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+5.53 EUR
Mindestbestellmenge: 1500 Stücke
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DCL540D01(T,E DCL540D01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540D01
DCL540D01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.35 EUR
10+8.73 EUR
100+7.15 EUR
500+6.03 EUR
Mindestbestellmenge: 2 Stücke
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TC62D776CFNAG,CEBH TC62D776CFNAG_10-01-14.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER
Packaging: Bulk
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C
Applications: LED Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Shift Register
Supplier Device Package: 24-SSOP
Dimming: No
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
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TPH3R003PL,LQ TPH3R003PL_datasheet_en_20161019.pdf?did=55430&prodName=TPH3R003PL
TPH3R003PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 88A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
Produkt ist nicht verfügbar
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TPH3R003PL,LQ TPH3R003PL_datasheet_en_20161019.pdf?did=55430&prodName=TPH3R003PL
TPH3R003PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 88A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.67 EUR
13+1.68 EUR
Mindestbestellmenge: 8 Stücke
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TJ60S04M3L(T6L1,NQ docget.jsp?did=11301&prodName=TJ60S04M3L
TJ60S04M3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.11 EUR
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TJ60S04M3L(T6L1,NQ docget.jsp?did=11301&prodName=TJ60S04M3L
TJ60S04M3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2222 Stücke:
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10+2.44 EUR
100+1.64 EUR
500+1.31 EUR
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CMZ13(TE12L,Q,M) CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12
CMZ13(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Produkt ist nicht verfügbar
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CMZ13(TE12L,Q,M) CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12
CMZ13(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
auf Bestellung 1725 Stücke:
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MG04SCA40EA eHDD-MG04SCAxxEx-product-overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SAS 5V/12V
Operating Temperature: 5°C ~ 55°C
Type: SAS
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Produkt ist nicht verfügbar
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MG04SCA60EA eHDD-MG04SCAxxEx-product-overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TOTX1350A(F) TOTX1350F.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
Produkt ist nicht verfügbar
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TOTX1350A(V,F) TOTX1350F.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
Produkt ist nicht verfügbar
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TORX1350A(V,F) docget.jsp?did=57929&prodName=TORX1350A%28V%2CF%29
Hersteller: Toshiba Semiconductor and Storage
Description: FIBER OPTIC RECEIVER 500KBPS
Packaging: Tube
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Power - Minimum Receivable: -27dBm
Current - Supply: 20 mA
Produkt ist nicht verfügbar
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TLP3052A(D4,F docget.jsp?did=30349&prodName=TLP3052AF
TLP3052A(D4,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP3052AF(D4,F docget.jsp?did=30349&prodName=TLP3052AF
TLP3052AF(D4,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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7UL3G14FK,LF docget.jsp?did=147405&prodName=7UL3G14FK
7UL3G14FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
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7UL3G14FK,LF docget.jsp?did=147405&prodName=7UL3G14FK
7UL3G14FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 5435 Stücke:
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48+0.44 EUR
69+0.31 EUR
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500+0.2 EUR
1000+0.19 EUR
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TCR1HF18B,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR1HF18B,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2945 Stücke:
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23+0.92 EUR
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500+0.38 EUR
1000+0.29 EUR
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TLP7830(D4-TP4,E
TLP7830(D4-TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: IC OP AMP ISOLATION SO8
Number of Channels: 1
Supplier Device Package: 8-SO
Voltage Supply Source: Dual Supply
Resolution (Bits): 16 b
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Data Interface: Serial
Type: Modulator
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP3107(F TLP3107_datasheet_en_20200217.pdf?did=14441&prodName=TLP3107
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.3A 0-60V
Packaging: Tube
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.3 A
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 60 mOhms
Produkt ist nicht verfügbar
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TK065Z65Z,S1F TK065Z65Z_datasheet_en_20181128.pdf?did=63664&prodName=TK065Z65Z
TK065Z65Z,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TO-247-4L(T)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
auf Bestellung 25 Stücke:
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2+14.22 EUR
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TC7SET00F,LJ(CT TC7SET00F_datasheet_en_20171221.pdf?did=20073&prodName=TC7SET00F
TC7SET00F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SET00F,LJ(CT TC7SET00F_datasheet_en_20171221.pdf?did=20073&prodName=TC7SET00F
TC7SET00F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 2894 Stücke:
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TB67H481FTG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
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TB67H481FTG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
auf Bestellung 4000 Stücke:
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4+5.95 EUR
10+3.87 EUR
25+3.32 EUR
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500+2.24 EUR
1000+2.08 EUR
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TB67S569FTG(O,R,EL TB67S569FTG_datasheet_en_20241127.pdf?did=153337&prodName=TB67S569FTG&returnFlg=false
TB67S569FTG(O,R,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 40V, 2A, 1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 34V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 40V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
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TB67S569FTG(O,R,EL TB67S569FTG_datasheet_en_20241127.pdf?did=153337&prodName=TB67S569FTG&returnFlg=false
TB67S569FTG(O,R,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 40V, 2A, 1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 34V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 40V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 3485 Stücke:
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6+4.08 EUR
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500+2.25 EUR
1000+2.18 EUR
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TB67S589FTG(O,R,EL TB67S589FTG_datasheet_en_20241127.pdf?did=153431&prodName=TB67S589FTG&returnFlg=false
TB67S589FTG(O,R,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
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TB67S589FTG(O,R,EL TB67S589FTG_datasheet_en_20241127.pdf?did=153431&prodName=TB67S589FTG&returnFlg=false
TB67S589FTG(O,R,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 3432 Stücke:
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5+4.38 EUR
10+3.26 EUR
25+2.98 EUR
100+2.67 EUR
250+2.52 EUR
500+2.43 EUR
1000+2.36 EUR
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TLP3083F(TP4,F docget.jsp?did=30348&prodName=TLP3083F
TLP3083F(TP4,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+1.5 EUR
2000+1.43 EUR
3000+1.39 EUR
5000+1.34 EUR
Mindestbestellmenge: 1000 Stücke
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