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DF2B26M4SL,L3F DF2B26M4SL,L3F Toshiba Semiconductor and Storage DF2B26M4SL_datasheet_en_20180328.pdf?did=60806&prodName=DF2B26M4SL Description: TVS DIODE 24VWM 31.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V
Voltage - Clamping (Max) @ Ipp: 31.5V (Typ)
Power - Peak Pulse: 19W
Power Line Protection: No
auf Bestellung 51139 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
90+0.2 EUR
205+0.086 EUR
500+0.081 EUR
1000+0.076 EUR
2000+0.074 EUR
5000+0.072 EUR
Mindestbestellmenge: 63
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TB9053FTG(EL) TB9053FTG(EL) Toshiba Semiconductor and Storage docget.jsp?did=70069&prodName=TB9053FTG Description: H-BRIDGE MTR DRV 2CH 5A/1CH 10A
Packaging: Tape & Reel (TR)
Package / Case: 40-LFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 28V
Technology: DMOS
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: 40-QFN (6x6)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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TB9053FTG(EL) TB9053FTG(EL) Toshiba Semiconductor and Storage docget.jsp?did=70069&prodName=TB9053FTG Description: H-BRIDGE MTR DRV 2CH 5A/1CH 10A
Packaging: Cut Tape (CT)
Package / Case: 40-LFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 28V
Technology: DMOS
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: 40-QFN (6x6)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
auf Bestellung 2970 Stücke:
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3+7.9 EUR
10+7.1 EUR
25+6.71 EUR
100+5.81 EUR
250+5.52 EUR
500+4.95 EUR
1000+4.17 EUR
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TB9054FTG(EL) Toshiba Semiconductor and Storage docget.jsp?did=70069&prodName=TB9054FTG Description: H-BRIDGE MTR DRV 2CH 5A SPI, AEC
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 28V
Technology: DMOS
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: 40-QFN (6x6)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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TB9054FTG(EL) Toshiba Semiconductor and Storage docget.jsp?did=70069&prodName=TB9054FTG Description: H-BRIDGE MTR DRV 2CH 5A SPI, AEC
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 28V
Technology: DMOS
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: 40-QFN (6x6)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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RN2302,LF RN2302,LF Toshiba Semiconductor and Storage docget.jsp?did=18998&prodName=RN2302 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 12000 Stücke:
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3000+0.061 EUR
6000+0.054 EUR
9000+0.051 EUR
Mindestbestellmenge: 3000
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DF2B7AFS,L3M DF2B7AFS,L3M Toshiba Semiconductor and Storage DF2B7AFS_datasheet_en_20220822.pdf?did=55586&prodName=DF2B7AFS Description: TVS DIODE 5.5VWM 20VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 80000 Stücke:
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10000+0.039 EUR
20000+0.032 EUR
30000+0.03 EUR
50000+0.029 EUR
70000+0.027 EUR
Mindestbestellmenge: 10000
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DF2B7AFS,L3M DF2B7AFS,L3M Toshiba Semiconductor and Storage DF2B7AFS_datasheet_en_20220822.pdf?did=55586&prodName=DF2B7AFS Description: TVS DIODE 5.5VWM 20VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 82530 Stücke:
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91+0.19 EUR
143+0.12 EUR
307+0.057 EUR
500+0.052 EUR
1000+0.047 EUR
2000+0.046 EUR
5000+0.044 EUR
Mindestbestellmenge: 91
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TLP2368(TPR,E TLP2368(TPR,E Toshiba Semiconductor and Storage docget.jsp?did=7705&prodName=TLP2368 Description: OPTOISO 3.75KV OPEN COLL S-O6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 3000 Stücke:
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3000+1.13 EUR
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TLP2368(TPR,E TLP2368(TPR,E Toshiba Semiconductor and Storage docget.jsp?did=7705&prodName=TLP2368 Description: OPTOISO 3.75KV OPEN COLL S-O6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 3000 Stücke:
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6+3.06 EUR
10+1.96 EUR
100+1.4 EUR
500+1.17 EUR
1000+1.11 EUR
Mindestbestellmenge: 6
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TK5P50D(T6RSS-Q) TK5P50D(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?did=2310&prodName=TK5P50D Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
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TK5P50D(T6RSS-Q) TK5P50D(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?did=2310&prodName=TK5P50D Description: MOSFET N-CH 500V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 3871 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.9 EUR
10+1.85 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.9 EUR
Mindestbestellmenge: 7
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TK5P53D(T6RSS-Q) TK5P53D(T6RSS-Q) Toshiba Semiconductor and Storage TK5P53D_datasheet_en_20150803.pdf?did=2315&prodName=TK5P53D Description: MOSFET N-CH 525V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Produkt ist nicht verfügbar
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TK5P53D(T6RSS-Q) TK5P53D(T6RSS-Q) Toshiba Semiconductor and Storage TK5P53D_datasheet_en_20150803.pdf?did=2315&prodName=TK5P53D Description: MOSFET N-CH 525V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 1713 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
10+1.9 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.93 EUR
Mindestbestellmenge: 6
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TK6P53D(T6RSS-Q) TK6P53D(T6RSS-Q) Toshiba Semiconductor and Storage TK6P53D_datasheet_en_20131101.pdf?did=2322&prodName=TK6P53D Description: MOSFET N-CH 525V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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TK6P53D(T6RSS-Q) TK6P53D(T6RSS-Q) Toshiba Semiconductor and Storage TK6P53D_datasheet_en_20131101.pdf?did=2322&prodName=TK6P53D Description: MOSFET N-CH 525V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
10+2 EUR
100+1.35 EUR
500+1.07 EUR
1000+0.98 EUR
Mindestbestellmenge: 6
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TC74HC32AF(EL,F) TC74HC32AF(EL,F) Toshiba Semiconductor and Storage Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC74HC32AF(EL,F) TC74HC32AF(EL,F) Toshiba Semiconductor and Storage Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TPW5200FNH,L1Q Toshiba Semiconductor and Storage TPW5200FNH_datasheet_en_20191030.pdf?did=30358&prodName=TPW5200FNH Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
Produkt ist nicht verfügbar
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TPW5200FNH,L1Q Toshiba Semiconductor and Storage TPW5200FNH_datasheet_en_20191030.pdf?did=30358&prodName=TPW5200FNH Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 4826 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.61 EUR
10+3.82 EUR
100+3.04 EUR
500+2.58 EUR
1000+2.18 EUR
2000+2.08 EUR
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7UL1T08FU,LF 7UL1T08FU,LF Toshiba Semiconductor and Storage Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2.2V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
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7UL1T08FU,LF 7UL1T08FU,LF Toshiba Semiconductor and Storage Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2.2V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 8089 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
34+0.52 EUR
39+0.46 EUR
100+0.29 EUR
250+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
Mindestbestellmenge: 26
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TLP5222(TP,E TLP5222(TP,E Toshiba Semiconductor and Storage TLP5222_datasheet_en_20220722.pdf?did=143287&prodName=TLP5222 Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.67V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 58ns, 57ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5222(TP,E TLP5222(TP,E Toshiba Semiconductor and Storage TLP5222_datasheet_en_20220722.pdf?did=143287&prodName=TLP5222 Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.67V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 58ns, 57ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.56 EUR
10+8.22 EUR
100+6.49 EUR
500+5.81 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DF2B6M5SL,L3F DF2B6M5SL,L3F Toshiba Semiconductor and Storage DF2B6M5SL_datasheet_en_20191217.pdf?did=60620&prodName=DF2B6M5SL Description: TVS DIODE 5VWM 26.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 26.5V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF2B6M5SL,L3F DF2B6M5SL,L3F Toshiba Semiconductor and Storage DF2B6M5SL_datasheet_en_20191217.pdf?did=60620&prodName=DF2B6M5SL Description: TVS DIODE 5VWM 26.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 26.5V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
auf Bestellung 5010 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
45+0.4 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.097 EUR
5000+0.09 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
TLP2761(D4-TP,E TLP2761(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=28819&prodName=TLP2761 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2761(D4-TP,E TLP2761(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=28819&prodName=TLP2761 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 656 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
14+1.26 EUR
100+0.94 EUR
500+0.79 EUR
Mindestbestellmenge: 10
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TLP2768A(TP,E TLP2768A(TP,E Toshiba Semiconductor and Storage docget.jsp?did=28764&prodName=TLP2768A Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.84 EUR
3000+0.8 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
TLP2768A(TP,E TLP2768A(TP,E Toshiba Semiconductor and Storage docget.jsp?did=28764&prodName=TLP2768A Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 4172 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.02 EUR
13+1.43 EUR
100+1.07 EUR
500+0.91 EUR
Mindestbestellmenge: 9
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TLP2735(TP,E TLP2735(TP,E Toshiba Semiconductor and Storage TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2735(TP,E TLP2735(TP,E Toshiba Semiconductor and Storage TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
10+1.81 EUR
100+1.37 EUR
500+1.17 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TLP2735(D4-TP,E TLP2735(D4-TP,E Toshiba Semiconductor and Storage TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2735(D4-TP,E TLP2735(D4-TP,E Toshiba Semiconductor and Storage TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
10+1.81 EUR
100+1.37 EUR
500+1.17 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TLP2719(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=61847&prodName=TLP2719 Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2719(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=61847&prodName=TLP2719 Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
11+1.74 EUR
100+1.31 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TLP2770(D4-TP,E TLP2770(D4-TP,E Toshiba Semiconductor and Storage TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.46 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
TLP2770(D4-TP,E TLP2770(D4-TP,E Toshiba Semiconductor and Storage TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 2435 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.31 EUR
10+2.38 EUR
100+1.83 EUR
500+1.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TLP2735(E TLP2735(E Toshiba Semiconductor and Storage TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
10+1.81 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
RN1423TE85LF RN1423TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1423TE85LF RN1423TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 11565 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RN1424TE85LF RN1424TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1424TE85LF RN1424TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 14798 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
40+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RN1422TE85LF RN1422TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1422TE85LF RN1422TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 9881 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24
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RN1421TE85LF RN1421TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
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RN1421TE85LF RN1421TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RN1425TE85LF RN1425TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 470 Ohms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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RN1425TE85LF RN1425TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 470 Ohms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1880 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
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RN1426TE85LF RN1426TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1426TE85LF RN1426TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
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74LVC2T45FK,LF(CB 74LVC2T45FK,LF(CB Toshiba Semiconductor and Storage Description: 1-BITX2 DUAL SUPPLYTRANSCVR,SOT-
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Supplier Device Package: US8
Output Type: Tri-State
Operating Temperature: -40°C ~ 125°C (TA)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 3000 Stücke:
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3000+0.23 EUR
Mindestbestellmenge: 3000
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74LVC2T45FK,LF(CB 74LVC2T45FK,LF(CB Toshiba Semiconductor and Storage Description: 1-BITX2 DUAL SUPPLYTRANSCVR,SOT-
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Supplier Device Package: US8
Output Type: Tri-State
Operating Temperature: -40°C ~ 125°C (TA)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 5828 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
27+0.66 EUR
33+0.54 EUR
100+0.41 EUR
250+0.35 EUR
500+0.31 EUR
1000+0.27 EUR
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HDEPZ11GEA51 HDEPZ11GEA51 Toshiba Semiconductor and Storage Description: LINEAR IC
Packaging: Bulk
auf Bestellung 20 Stücke:
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1+728.18 EUR
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HDEPZ11GEB51 Toshiba Semiconductor and Storage Description: LINEAR IC
Packaging: Bulk
Produkt ist nicht verfügbar
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1N4148WS,H3F(B 1N4148WS,H3F(B Toshiba Semiconductor and Storage datasheet_en_20220304.pdf?did=141703 Description: DIODE STANDARD 100V 250MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: USC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.045 EUR
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1N4148WS,H3F(B 1N4148WS,H3F(B Toshiba Semiconductor and Storage datasheet_en_20220304.pdf?did=141703 Description: DIODE STANDARD 100V 250MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: USC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 3394 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
122+0.14 EUR
199+0.089 EUR
500+0.064 EUR
1000+0.057 EUR
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TC74VCX08FTEL TC74VCX08FTEL Toshiba Semiconductor and Storage TC74VCX08FT_datasheet_en_20210518.pdf?did=21832&prodName=TC74VCX08FT Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
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TK40S06N1L,LQ TK40S06N1L,LQ Toshiba Semiconductor and Storage docget.jsp?did=30110&prodName=TK40S06N1L Description: MOSFET N-CH 60V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2565 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
16+1.16 EUR
100+0.8 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 12
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TPH6R004PL,LQ TPH6R004PL,LQ Toshiba Semiconductor and Storage TPH6R004PL_datasheet_en_20170525.pdf?did=55294&prodName=TPH6R004PL Description: MOSFET N-CH 40V 87A/49A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Produkt ist nicht verfügbar
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DF2B26M4SL,L3F DF2B26M4SL_datasheet_en_20180328.pdf?did=60806&prodName=DF2B26M4SL
DF2B26M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 31.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V
Voltage - Clamping (Max) @ Ipp: 31.5V (Typ)
Power - Peak Pulse: 19W
Power Line Protection: No
auf Bestellung 51139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
90+0.2 EUR
205+0.086 EUR
500+0.081 EUR
1000+0.076 EUR
2000+0.074 EUR
5000+0.072 EUR
Mindestbestellmenge: 63
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TB9053FTG(EL) docget.jsp?did=70069&prodName=TB9053FTG
TB9053FTG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: H-BRIDGE MTR DRV 2CH 5A/1CH 10A
Packaging: Tape & Reel (TR)
Package / Case: 40-LFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 28V
Technology: DMOS
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: 40-QFN (6x6)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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TB9053FTG(EL) docget.jsp?did=70069&prodName=TB9053FTG
TB9053FTG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: H-BRIDGE MTR DRV 2CH 5A/1CH 10A
Packaging: Cut Tape (CT)
Package / Case: 40-LFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 28V
Technology: DMOS
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: 40-QFN (6x6)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.9 EUR
10+7.1 EUR
25+6.71 EUR
100+5.81 EUR
250+5.52 EUR
500+4.95 EUR
1000+4.17 EUR
Mindestbestellmenge: 3
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TB9054FTG(EL) docget.jsp?did=70069&prodName=TB9054FTG
Hersteller: Toshiba Semiconductor and Storage
Description: H-BRIDGE MTR DRV 2CH 5A SPI, AEC
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 28V
Technology: DMOS
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: 40-QFN (6x6)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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TB9054FTG(EL) docget.jsp?did=70069&prodName=TB9054FTG
Hersteller: Toshiba Semiconductor and Storage
Description: H-BRIDGE MTR DRV 2CH 5A SPI, AEC
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 28V
Technology: DMOS
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: 40-QFN (6x6)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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RN2302,LF docget.jsp?did=18998&prodName=RN2302
RN2302,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.061 EUR
6000+0.054 EUR
9000+0.051 EUR
Mindestbestellmenge: 3000
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DF2B7AFS,L3M DF2B7AFS_datasheet_en_20220822.pdf?did=55586&prodName=DF2B7AFS
DF2B7AFS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.039 EUR
20000+0.032 EUR
30000+0.03 EUR
50000+0.029 EUR
70000+0.027 EUR
Mindestbestellmenge: 10000
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DF2B7AFS,L3M DF2B7AFS_datasheet_en_20220822.pdf?did=55586&prodName=DF2B7AFS
DF2B7AFS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 82530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
143+0.12 EUR
307+0.057 EUR
500+0.052 EUR
1000+0.047 EUR
2000+0.046 EUR
5000+0.044 EUR
Mindestbestellmenge: 91
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TLP2368(TPR,E docget.jsp?did=7705&prodName=TLP2368
TLP2368(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV OPEN COLL S-O6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.13 EUR
Mindestbestellmenge: 3000
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TLP2368(TPR,E docget.jsp?did=7705&prodName=TLP2368
TLP2368(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV OPEN COLL S-O6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+1.96 EUR
100+1.4 EUR
500+1.17 EUR
1000+1.11 EUR
Mindestbestellmenge: 6
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TK5P50D(T6RSS-Q) docget.jsp?did=2310&prodName=TK5P50D
TK5P50D(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
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TK5P50D(T6RSS-Q) docget.jsp?did=2310&prodName=TK5P50D
TK5P50D(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 3871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
10+1.85 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.9 EUR
Mindestbestellmenge: 7
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TK5P53D(T6RSS-Q) TK5P53D_datasheet_en_20150803.pdf?did=2315&prodName=TK5P53D
TK5P53D(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Produkt ist nicht verfügbar
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TK5P53D(T6RSS-Q) TK5P53D_datasheet_en_20150803.pdf?did=2315&prodName=TK5P53D
TK5P53D(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 1713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+1.9 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.93 EUR
Mindestbestellmenge: 6
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TK6P53D(T6RSS-Q) TK6P53D_datasheet_en_20131101.pdf?did=2322&prodName=TK6P53D
TK6P53D(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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TK6P53D(T6RSS-Q) TK6P53D_datasheet_en_20131101.pdf?did=2322&prodName=TK6P53D
TK6P53D(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2 EUR
100+1.35 EUR
500+1.07 EUR
1000+0.98 EUR
Mindestbestellmenge: 6
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TC74HC32AF(EL,F)
TC74HC32AF(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC74HC32AF(EL,F)
TC74HC32AF(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TPW5200FNH,L1Q TPW5200FNH_datasheet_en_20191030.pdf?did=30358&prodName=TPW5200FNH
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
Produkt ist nicht verfügbar
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TPW5200FNH,L1Q TPW5200FNH_datasheet_en_20191030.pdf?did=30358&prodName=TPW5200FNH
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 4826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.61 EUR
10+3.82 EUR
100+3.04 EUR
500+2.58 EUR
1000+2.18 EUR
2000+2.08 EUR
Mindestbestellmenge: 4
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7UL1T08FU,LF
7UL1T08FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2.2V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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7UL1T08FU,LF
7UL1T08FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2.2V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 8089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
34+0.52 EUR
39+0.46 EUR
100+0.29 EUR
250+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
Mindestbestellmenge: 26
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TLP5222(TP,E TLP5222_datasheet_en_20220722.pdf?did=143287&prodName=TLP5222
TLP5222(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.67V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 58ns, 57ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP5222(TP,E TLP5222_datasheet_en_20220722.pdf?did=143287&prodName=TLP5222
TLP5222(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.67V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 58ns, 57ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.56 EUR
10+8.22 EUR
100+6.49 EUR
500+5.81 EUR
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DF2B6M5SL,L3F DF2B6M5SL_datasheet_en_20191217.pdf?did=60620&prodName=DF2B6M5SL
DF2B6M5SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 26.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 26.5V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B6M5SL,L3F DF2B6M5SL_datasheet_en_20191217.pdf?did=60620&prodName=DF2B6M5SL
DF2B6M5SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 26.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 26.5V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
auf Bestellung 5010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
45+0.4 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.097 EUR
5000+0.09 EUR
Mindestbestellmenge: 31
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TLP2761(D4-TP,E docget.jsp?did=28819&prodName=TLP2761
TLP2761(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
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TLP2761(D4-TP,E docget.jsp?did=28819&prodName=TLP2761
TLP2761(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 656 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
14+1.26 EUR
100+0.94 EUR
500+0.79 EUR
Mindestbestellmenge: 10
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TLP2768A(TP,E docget.jsp?did=28764&prodName=TLP2768A
TLP2768A(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.84 EUR
3000+0.8 EUR
Mindestbestellmenge: 1500
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TLP2768A(TP,E docget.jsp?did=28764&prodName=TLP2768A
TLP2768A(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 4172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
13+1.43 EUR
100+1.07 EUR
500+0.91 EUR
Mindestbestellmenge: 9
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TLP2735(TP,E TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735
TLP2735(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2735(TP,E TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735
TLP2735(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
10+1.81 EUR
100+1.37 EUR
500+1.17 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TLP2735(D4-TP,E TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735
TLP2735(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2735(D4-TP,E TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735
TLP2735(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
10+1.81 EUR
100+1.37 EUR
500+1.17 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TLP2719(D4-TP,E docget.jsp?did=61847&prodName=TLP2719
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2719(D4-TP,E docget.jsp?did=61847&prodName=TLP2719
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
11+1.74 EUR
100+1.31 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TLP2770(D4-TP,E TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770
TLP2770(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.46 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
TLP2770(D4-TP,E TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770
TLP2770(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 2435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
10+2.38 EUR
100+1.83 EUR
500+1.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TLP2735(E TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735
TLP2735(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
10+1.81 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
RN1423TE85LF docget.jsp?did=18798&prodName=RN1423
RN1423TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1423TE85LF docget.jsp?did=18798&prodName=RN1423
RN1423TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 11565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RN1424TE85LF docget.jsp?did=18798&prodName=RN1423
RN1424TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1424TE85LF docget.jsp?did=18798&prodName=RN1423
RN1424TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 14798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
40+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RN1422TE85LF docget.jsp?did=18798&prodName=RN1423
RN1422TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1422TE85LF docget.jsp?did=18798&prodName=RN1423
RN1422TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 9881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RN1421TE85LF docget.jsp?did=18798&prodName=RN1423
RN1421TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1421TE85LF docget.jsp?did=18798&prodName=RN1423
RN1421TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RN1425TE85LF docget.jsp?did=18798&prodName=RN1423
RN1425TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 470 Ohms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1425TE85LF docget.jsp?did=18798&prodName=RN1423
RN1425TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 470 Ohms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
RN1426TE85LF docget.jsp?did=18798&prodName=RN1423
RN1426TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1426TE85LF docget.jsp?did=18798&prodName=RN1423
RN1426TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
74LVC2T45FK,LF(CB
74LVC2T45FK,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: 1-BITX2 DUAL SUPPLYTRANSCVR,SOT-
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Supplier Device Package: US8
Output Type: Tri-State
Operating Temperature: -40°C ~ 125°C (TA)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
74LVC2T45FK,LF(CB
74LVC2T45FK,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: 1-BITX2 DUAL SUPPLYTRANSCVR,SOT-
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Supplier Device Package: US8
Output Type: Tri-State
Operating Temperature: -40°C ~ 125°C (TA)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 5828 Stücke:
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Anzahl Preis
16+1.11 EUR
27+0.66 EUR
33+0.54 EUR
100+0.41 EUR
250+0.35 EUR
500+0.31 EUR
1000+0.27 EUR
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HDEPZ11GEA51
HDEPZ11GEA51
Hersteller: Toshiba Semiconductor and Storage
Description: LINEAR IC
Packaging: Bulk
auf Bestellung 20 Stücke:
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1+728.18 EUR
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HDEPZ11GEB51
Hersteller: Toshiba Semiconductor and Storage
Description: LINEAR IC
Packaging: Bulk
Produkt ist nicht verfügbar
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1N4148WS,H3F(B datasheet_en_20220304.pdf?did=141703
1N4148WS,H3F(B
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: USC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.045 EUR
Mindestbestellmenge: 3000
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1N4148WS,H3F(B datasheet_en_20220304.pdf?did=141703
1N4148WS,H3F(B
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: USC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 3394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
122+0.14 EUR
199+0.089 EUR
500+0.064 EUR
1000+0.057 EUR
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TC74VCX08FTEL TC74VCX08FT_datasheet_en_20210518.pdf?did=21832&prodName=TC74VCX08FT
TC74VCX08FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
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TK40S06N1L,LQ docget.jsp?did=30110&prodName=TK40S06N1L
TK40S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
16+1.16 EUR
100+0.8 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 12
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TPH6R004PL,LQ TPH6R004PL_datasheet_en_20170525.pdf?did=55294&prodName=TPH6R004PL
TPH6R004PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 87A/49A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Produkt ist nicht verfügbar
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