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2SA2142(TE16L1,NQ) 2SA2142(TE16L1,NQ) Toshiba Semiconductor and Storage 2SA2142_datasheet_en_20131101.pdf?did=22764&prodName=2SA2142 Description: TRANS PNP 600V 0.5A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
auf Bestellung 3287 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
12+1.50 EUR
25+1.26 EUR
100+0.98 EUR
250+0.84 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
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TK2P60D(TE16L1,NV) Toshiba Semiconductor and Storage TK2P60D_datasheet_en_20131101.pdf?did=2372&prodName=TK2P60D Description: MOSFET N-CH 600V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
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TLP5772H(TP,E TLP5772H(TP,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 1288 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.28 EUR
10+2.80 EUR
100+2.05 EUR
500+1.75 EUR
Mindestbestellmenge: 5
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TLP5772H(D4-TP,E TLP5772H(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5772H(D4-TP,E TLP5772H(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.28 EUR
10+2.80 EUR
100+2.05 EUR
500+1.75 EUR
Mindestbestellmenge: 5
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RN2105MFV,L3XHF(CT RN2105MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2105MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.09 EUR
Mindestbestellmenge: 8000
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RN2105MFV,L3XHF(CT RN2105MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2105MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
47+0.38 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
2000+0.09 EUR
Mindestbestellmenge: 33
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MG08ADP400E Toshiba Semiconductor and Storage eHDD-MG08-D_Product-Manual_r0.pdf Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TLPN137(D4-TP1,F) TLPN137(D4-TP1,F) Toshiba Semiconductor and Storage TLPN137_datasheet_en_20170821.pdf?did=10189&prodName=TLPN137 Description: HIGH SPEED LOGIC OUTPUT COUPLER;
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 12ns, 3ns
Common Mode Transient Immunity (Min): 10kVµs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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TLPN137(D4-TP1,F) TLPN137(D4-TP1,F) Toshiba Semiconductor and Storage TLPN137_datasheet_en_20170821.pdf?did=10189&prodName=TLPN137 Description: HIGH SPEED LOGIC OUTPUT COUPLER;
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 12ns, 3ns
Common Mode Transient Immunity (Min): 10kVµs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.76 EUR
11+1.76 EUR
100+1.24 EUR
500+1.03 EUR
Mindestbestellmenge: 7
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HDWG21CXZSTA Toshiba Semiconductor and Storage TAEC393_Toshiba_Product_Sheet_N300_LowRes.pdf Description: N300 12TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+508.90 EUR
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HDWG51CXZSTB Toshiba Semiconductor and Storage Toshiba_N300Pro-SalesSheet_English-Web.pdf Description: N300PRO 12TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+600.88 EUR
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MC04ACA200E Toshiba Semiconductor and Storage eHDD-MC04ACAxxE-product-overview_EOL.pdf Description: TOMCAT CLOUD 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG04ACA200E Toshiba Semiconductor and Storage Description: TOMCAT 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG04ACA200A Toshiba Semiconductor and Storage Description: TOMCAT 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG04SCA20EA Toshiba Semiconductor and Storage eHDD-MG04SCAxxEx-product-overview.pdf Description: HDD 2TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG04SCA20EN Toshiba Semiconductor and Storage Description: TOMCAT-R 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG04SCA20EE Toshiba Semiconductor and Storage Description: TOMCAT-R 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TPH3R10AQM,LQ TPH3R10AQM,LQ Toshiba Semiconductor and Storage TPH3R10AQM_datasheet_en_20210817.pdf?did=140441&prodName=TPH3R10AQM Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Produkt ist nicht verfügbar
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TPH3R10AQM,LQ TPH3R10AQM,LQ Toshiba Semiconductor and Storage TPH3R10AQM_datasheet_en_20210817.pdf?did=140441&prodName=TPH3R10AQM Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
auf Bestellung 3751 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.80 EUR
10+2.44 EUR
100+1.67 EUR
500+1.34 EUR
1000+1.20 EUR
2000+1.14 EUR
Mindestbestellmenge: 5
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HDWG440XZSTA Toshiba Semiconductor and Storage Toshiba_N300_SalesSheet_English_07-27-21.pdf Description: N300 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 65°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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HDWG440XZSTB Toshiba Semiconductor and Storage Toshiba_N300Pro-SalesSheet_English-Web.pdf Description: N300PRO 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+267.17 EUR
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TLP2367(TPL,E TLP2367(TPL,E Toshiba Semiconductor and Storage TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367 Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
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TLP2367(TPL,E TLP2367(TPL,E Toshiba Semiconductor and Storage TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367 Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
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SSM6P816R,LF SSM6P816R,LF Toshiba Semiconductor and Storage docget.jsp?did=69472&prodName=SSM6P816R Description: MOSFET 2P-CH 20V 6A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
Mindestbestellmenge: 3000
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SSM6P816R,LF SSM6P816R,LF Toshiba Semiconductor and Storage docget.jsp?did=69472&prodName=SSM6P816R Description: MOSFET 2P-CH 20V 6A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
auf Bestellung 6743 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.25 EUR
23+0.77 EUR
100+0.50 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
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TLP5705H(TP,E TLP5705H(TP,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5705H(TP,E TLP5705H(TP,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.22 EUR
10+2.07 EUR
100+1.48 EUR
500+1.24 EUR
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TLP5705H(D4TP4,E TLP5705H(D4TP4,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1500 Stücke:
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1500+1.31 EUR
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TLP5705H(D4TP4,E TLP5705H(D4TP4,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1500 Stücke:
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6+3.33 EUR
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500+1.29 EUR
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TLP5705H(TP4,E TLP5705H(TP4,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5705H(TP4,E TLP5705H(TP4,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.33 EUR
10+2.14 EUR
100+1.53 EUR
500+1.29 EUR
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TPH3R70APL1,LQ TPH3R70APL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69027&prodName=TPH3R70APL1 Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 5000 Stücke:
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5000+1.03 EUR
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TPH3R70APL1,LQ TPH3R70APL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69027&prodName=TPH3R70APL1 Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 8789 Stücke:
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5+3.66 EUR
10+2.34 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.17 EUR
2000+1.08 EUR
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CUHS20F40,H3F CUHS20F40,H3F Toshiba Semiconductor and Storage CUHS20F40_datasheet_en_20190831.pdf?did=63600&prodName=CUHS20F40 Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 15000 Stücke:
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3000+0.14 EUR
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CUHS20F40,H3F CUHS20F40,H3F Toshiba Semiconductor and Storage CUHS20F40_datasheet_en_20190831.pdf?did=63600&prodName=CUHS20F40 Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 26254 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
36+0.49 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
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TC7SU04FU,LF TC7SU04FU,LF Toshiba Semiconductor and Storage TC7SU04FU_datasheet_en_20170802.pdf?did=20190&prodName=TC7SU04FU Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 21000 Stücke:
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3000+0.12 EUR
6000+0.11 EUR
15000+0.09 EUR
Mindestbestellmenge: 3000
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TC7SU04FU,LF TC7SU04FU,LF Toshiba Semiconductor and Storage TC7SU04FU_datasheet_en_20170802.pdf?did=20190&prodName=TC7SU04FU Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 23313 Stücke:
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28+0.63 EUR
38+0.47 EUR
44+0.41 EUR
100+0.26 EUR
250+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
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RN1411,LXHF RN1411,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18792&prodName=RN1410 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
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RN1411,LXHF RN1411,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18792&prodName=RN1410 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
Mindestbestellmenge: 34
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RN2411,LXHF RN2411,LXHF Toshiba Semiconductor and Storage RN2411_datasheet_en_20210830.pdf?did=18878&prodName=RN2411 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
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RN2411,LXHF RN2411,LXHF Toshiba Semiconductor and Storage RN2411_datasheet_en_20210830.pdf?did=18878&prodName=RN2411 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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RN2415,LXHF RN2415,LXHF Toshiba Semiconductor and Storage RN2415_datasheet_en_20210830.pdf?did=18883&prodName=RN2415 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
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RN2415,LXHF RN2415,LXHF Toshiba Semiconductor and Storage RN2415_datasheet_en_20210830.pdf?did=18883&prodName=RN2415 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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RN2405,LXHF RN2405,LXHF Toshiba Semiconductor and Storage RN2405_datasheet_en_20210830.pdf?did=18874&prodName=RN2405 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
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RN2405,LXHF RN2405,LXHF Toshiba Semiconductor and Storage RN2405_datasheet_en_20210830.pdf?did=18874&prodName=RN2405 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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RN2409,LXHF RN2409,LXHF Toshiba Semiconductor and Storage RN2409_datasheet_en_20210830.pdf?did=18876&prodName=RN2409 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
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RN2409,LXHF RN2409,LXHF Toshiba Semiconductor and Storage RN2409_datasheet_en_20210830.pdf?did=18876&prodName=RN2409 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN1417,LXHF RN1417,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1417,LXHF RN1417,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN1412,LXHF RN1412,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1412,LXHF RN1412,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN2404,LXHF RN2404,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN2404,LXHF RN2404,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN1410,LXHF RN1410,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1410,LXHF RN1410,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN1413,LXHF RN1413,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1413,LXHF RN1413,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
TK60S10N1L,LXHQ TK60S10N1L,LXHQ Toshiba Semiconductor and Storage TK60S10N1L_datasheet_en_20200624.pdf?did=58173&prodName=TK60S10N1L Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK60S10N1L,LXHQ TK60S10N1L,LXHQ Toshiba Semiconductor and Storage TK60S10N1L_datasheet_en_20200624.pdf?did=58173&prodName=TK60S10N1L Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3704 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
10+2.11 EUR
100+1.49 EUR
500+1.31 EUR
1000+1.17 EUR
Mindestbestellmenge: 7
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2SA2142(TE16L1,NQ) 2SA2142_datasheet_en_20131101.pdf?did=22764&prodName=2SA2142
2SA2142(TE16L1,NQ)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 600V 0.5A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
auf Bestellung 3287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.50 EUR
25+1.26 EUR
100+0.98 EUR
250+0.84 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
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TK2P60D(TE16L1,NV) TK2P60D_datasheet_en_20131101.pdf?did=2372&prodName=TK2P60D
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
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TLP5772H(TP,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 1288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+2.80 EUR
100+2.05 EUR
500+1.75 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TLP5772H(D4-TP,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5772H(D4-TP,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+2.80 EUR
100+2.05 EUR
500+1.75 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
RN2105MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2105MFV
RN2105MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.09 EUR
Mindestbestellmenge: 8000
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RN2105MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2105MFV
RN2105MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
47+0.38 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
2000+0.09 EUR
Mindestbestellmenge: 33
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MG08ADP400E eHDD-MG08-D_Product-Manual_r0.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TLPN137(D4-TP1,F) TLPN137_datasheet_en_20170821.pdf?did=10189&prodName=TLPN137
TLPN137(D4-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT COUPLER;
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 12ns, 3ns
Common Mode Transient Immunity (Min): 10kVµs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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TLPN137(D4-TP1,F) TLPN137_datasheet_en_20170821.pdf?did=10189&prodName=TLPN137
TLPN137(D4-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT COUPLER;
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 12ns, 3ns
Common Mode Transient Immunity (Min): 10kVµs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
11+1.76 EUR
100+1.24 EUR
500+1.03 EUR
Mindestbestellmenge: 7
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HDWG21CXZSTA TAEC393_Toshiba_Product_Sheet_N300_LowRes.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: N300 12TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+508.90 EUR
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HDWG51CXZSTB Toshiba_N300Pro-SalesSheet_English-Web.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: N300PRO 12TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+600.88 EUR
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MC04ACA200E eHDD-MC04ACAxxE-product-overview_EOL.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TOMCAT CLOUD 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG04ACA200E
Hersteller: Toshiba Semiconductor and Storage
Description: TOMCAT 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MG04ACA200A
Hersteller: Toshiba Semiconductor and Storage
Description: TOMCAT 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG04SCA20EA eHDD-MG04SCAxxEx-product-overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 2TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG04SCA20EN
Hersteller: Toshiba Semiconductor and Storage
Description: TOMCAT-R 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG04SCA20EE
Hersteller: Toshiba Semiconductor and Storage
Description: TOMCAT-R 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TPH3R10AQM,LQ TPH3R10AQM_datasheet_en_20210817.pdf?did=140441&prodName=TPH3R10AQM
TPH3R10AQM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Produkt ist nicht verfügbar
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TPH3R10AQM,LQ TPH3R10AQM_datasheet_en_20210817.pdf?did=140441&prodName=TPH3R10AQM
TPH3R10AQM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
auf Bestellung 3751 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.80 EUR
10+2.44 EUR
100+1.67 EUR
500+1.34 EUR
1000+1.20 EUR
2000+1.14 EUR
Mindestbestellmenge: 5
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HDWG440XZSTA Toshiba_N300_SalesSheet_English_07-27-21.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: N300 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 65°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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HDWG440XZSTB Toshiba_N300Pro-SalesSheet_English-Web.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: N300PRO 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+267.17 EUR
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TLP2367(TPL,E TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367
TLP2367(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
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TLP2367(TPL,E TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367
TLP2367(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
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SSM6P816R,LF docget.jsp?did=69472&prodName=SSM6P816R
SSM6P816R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 6A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
Mindestbestellmenge: 3000
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SSM6P816R,LF docget.jsp?did=69472&prodName=SSM6P816R
SSM6P816R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 6A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
auf Bestellung 6743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
23+0.77 EUR
100+0.50 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
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TLP5705H(TP,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5705H(TP,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
10+2.07 EUR
100+1.48 EUR
500+1.24 EUR
Mindestbestellmenge: 6
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TLP5705H(D4TP4,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.31 EUR
Mindestbestellmenge: 1500
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TLP5705H(D4TP4,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.33 EUR
10+2.14 EUR
100+1.53 EUR
500+1.29 EUR
Mindestbestellmenge: 6
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TLP5705H(TP4,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5705H(TP4,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.33 EUR
10+2.14 EUR
100+1.53 EUR
500+1.29 EUR
Mindestbestellmenge: 6
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TPH3R70APL1,LQ docget.jsp?did=69027&prodName=TPH3R70APL1
TPH3R70APL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.03 EUR
Mindestbestellmenge: 5000
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TPH3R70APL1,LQ docget.jsp?did=69027&prodName=TPH3R70APL1
TPH3R70APL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 8789 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.34 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.17 EUR
2000+1.08 EUR
Mindestbestellmenge: 5
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CUHS20F40,H3F CUHS20F40_datasheet_en_20190831.pdf?did=63600&prodName=CUHS20F40
CUHS20F40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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CUHS20F40,H3F CUHS20F40_datasheet_en_20190831.pdf?did=63600&prodName=CUHS20F40
CUHS20F40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 26254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
36+0.49 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 23
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TC7SU04FU,LF TC7SU04FU_datasheet_en_20170802.pdf?did=20190&prodName=TC7SU04FU
TC7SU04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
15000+0.09 EUR
Mindestbestellmenge: 3000
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TC7SU04FU,LF TC7SU04FU_datasheet_en_20170802.pdf?did=20190&prodName=TC7SU04FU
TC7SU04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 23313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
38+0.47 EUR
44+0.41 EUR
100+0.26 EUR
250+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
Mindestbestellmenge: 28
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RN1411,LXHF docget.jsp?did=18792&prodName=RN1410
RN1411,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
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RN1411,LXHF docget.jsp?did=18792&prodName=RN1410
RN1411,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN2411,LXHF RN2411_datasheet_en_20210830.pdf?did=18878&prodName=RN2411
RN2411,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN2411,LXHF RN2411_datasheet_en_20210830.pdf?did=18878&prodName=RN2411
RN2411,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
RN2415,LXHF RN2415_datasheet_en_20210830.pdf?did=18883&prodName=RN2415
RN2415,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN2415,LXHF RN2415_datasheet_en_20210830.pdf?did=18883&prodName=RN2415
RN2415,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
RN2405,LXHF RN2405_datasheet_en_20210830.pdf?did=18874&prodName=RN2405
RN2405,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN2405,LXHF RN2405_datasheet_en_20210830.pdf?did=18874&prodName=RN2405
RN2405,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
RN2409,LXHF RN2409_datasheet_en_20210830.pdf?did=18876&prodName=RN2409
RN2409,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN2409,LXHF RN2409_datasheet_en_20210830.pdf?did=18876&prodName=RN2409
RN2409,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN1417,LXHF
RN1417,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1417,LXHF
RN1417,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN1412,LXHF
RN1412,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1412,LXHF
RN1412,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN2404,LXHF
RN2404,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN2404,LXHF
RN2404,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN1410,LXHF
RN1410,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1410,LXHF
RN1410,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN1413,LXHF
RN1413,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1413,LXHF
RN1413,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
TK60S10N1L,LXHQ TK60S10N1L_datasheet_en_20200624.pdf?did=58173&prodName=TK60S10N1L
TK60S10N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK60S10N1L,LXHQ TK60S10N1L_datasheet_en_20200624.pdf?did=58173&prodName=TK60S10N1L
TK60S10N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
10+2.11 EUR
100+1.49 EUR
500+1.31 EUR
1000+1.17 EUR
Mindestbestellmenge: 7
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