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TMPM3HQFDAFG Toshiba Semiconductor and Storage datasheet_en_20230707.pdf?did=139822 Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 135
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.9 EUR
10+ 16.45 EUR
60+ 15.76 EUR
TMPM3HNF10BFG TMPM3HNF10BFG Toshiba Semiconductor and Storage datasheet_en_20230428.pdf?did=151593 Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 92
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.52 EUR
10+ 18.85 EUR
25+ 18.07 EUR
90+ 15.92 EUR
TMPM3HQF10BFG Toshiba Semiconductor and Storage datasheet_en_20230428.pdf?did=151593 Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 134
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.69 EUR
10+ 21.78 EUR
TDTA114E,LM TDTA114E,LM Toshiba Semiconductor and Storage TDTA114E_datasheet_en_20201113.pdf?did=36696&prodName=TDTA114E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Produkt ist nicht verfügbar
TDTA114E,LM TDTA114E,LM Toshiba Semiconductor and Storage TDTA114E_datasheet_en_20201113.pdf?did=36696&prodName=TDTA114E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
TC7WU04FU,LF TC7WU04FU,LF Toshiba Semiconductor and Storage docget.jsp?did=20208&prodName=TC7WU04FK Description: IC INVERTER 3CH 3-INP SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
TC7WU04FU,LF TC7WU04FU,LF Toshiba Semiconductor and Storage docget.jsp?did=20208&prodName=TC7WU04FK Description: IC INVERTER 3CH 3-INP SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
TDTA123J,LM Toshiba Semiconductor and Storage TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Description: PB-F BIAS RESISTOR BUILT-IN TRAN
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.049 EUR
Mindestbestellmenge: 3000
TDTA123J,LM Toshiba Semiconductor and Storage TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Description: PB-F BIAS RESISTOR BUILT-IN TRAN
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
88+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
TRS4V65H,LQ Toshiba Semiconductor and Storage TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.34 EUR
Mindestbestellmenge: 2500
TRS4V65H,LQ Toshiba Semiconductor and Storage TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 4997 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
10+ 2.47 EUR
100+ 1.96 EUR
500+ 1.66 EUR
1000+ 1.41 EUR
Mindestbestellmenge: 6
TRS6V65H,LQ Toshiba Semiconductor and Storage TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.69 EUR
Mindestbestellmenge: 2500
TRS6V65H,LQ Toshiba Semiconductor and Storage TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+ 3.1 EUR
100+ 2.47 EUR
500+ 2.09 EUR
1000+ 1.77 EUR
Mindestbestellmenge: 5
TRS8V65H,LQ Toshiba Semiconductor and Storage TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H Description: G3 SIC-SBD 650V 8A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.01 EUR
Mindestbestellmenge: 2500
TRS8V65H,LQ Toshiba Semiconductor and Storage TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H Description: G3 SIC-SBD 650V 8A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
10+ 3.7 EUR
100+ 2.95 EUR
500+ 2.49 EUR
1000+ 2.12 EUR
Mindestbestellmenge: 4
TRS2E65H,S1Q Toshiba Semiconductor and Storage Description: G3 SIC-SBD 650V 2A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
10+ 2.51 EUR
100+ 1.96 EUR
Mindestbestellmenge: 7
TRS10V65H,LQ Toshiba Semiconductor and Storage TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H Description: G3 SIC-SBD 650V 10A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.26 EUR
5000+ 2.17 EUR
Mindestbestellmenge: 2500
TRS10V65H,LQ Toshiba Semiconductor and Storage TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H Description: G3 SIC-SBD 650V 10A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.65 EUR
10+ 3.9 EUR
100+ 3.16 EUR
500+ 2.81 EUR
1000+ 2.4 EUR
Mindestbestellmenge: 4
TRS3E65H,S1Q Toshiba Semiconductor and Storage Description: G3 SIC-SBD 650V 3A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 199pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.92 EUR
10+ 2.63 EUR
100+ 2.11 EUR
Mindestbestellmenge: 7
TRS12V65H,LQ Toshiba Semiconductor and Storage TRS12V65H_datasheet_en_20230410.pdf?did=152095&prodName=TRS12V65H Description: G3 SIC-SBD 650V 12A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 2500 Stücke:
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2500+2.57 EUR
Mindestbestellmenge: 2500
TRS12V65H,LQ Toshiba Semiconductor and Storage TRS12V65H_datasheet_en_20230410.pdf?did=152095&prodName=TRS12V65H Description: G3 SIC-SBD 650V 12A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 4962 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.28 EUR
10+ 4.43 EUR
100+ 3.58 EUR
500+ 3.18 EUR
1000+ 2.73 EUR
Mindestbestellmenge: 4
TRS4E65H,S1Q Toshiba Semiconductor and Storage Description: G3 SIC-SBD 650V 4A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.34 EUR
10+ 3.01 EUR
100+ 2.42 EUR
Mindestbestellmenge: 6
TRS6E65H,S1Q Toshiba Semiconductor and Storage Description: G3 SIC-SBD 650V 6A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
10+ 3.78 EUR
100+ 3.04 EUR
Mindestbestellmenge: 5
TRS8E65H,S1Q Toshiba Semiconductor and Storage TRS8E65H_datasheet_en_20230411.pdf?did=152121&prodName=TRS8E65H Description: G3 SIC-SBD 650V 8A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 379 Stücke:
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4+4.44 EUR
10+ 3.67 EUR
100+ 2.92 EUR
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TRS10E65H,S1Q Toshiba Semiconductor and Storage Description: G3 SIC-SBD 650V 10A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 340 Stücke:
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10+ 4.7 EUR
100+ 3.85 EUR
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TRS12E65H,S1Q Toshiba Semiconductor and Storage TRS12E65H_datasheet_en_20230411.pdf?did=152091&prodName=TRS12E65H Description: G3 SIC-SBD 650V 12A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 378 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.26 EUR
50+ 4.16 EUR
100+ 3.57 EUR
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RN1106MFV,L3XHF(CT RN1106MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1106MFV Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.091 EUR
Mindestbestellmenge: 8000
RN1106MFV,L3XHF(CT RN1106MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1106MFV Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
36+ 0.49 EUR
100+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 30
RN1106,LXHF(CT RN1106,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1106 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.094 EUR
Mindestbestellmenge: 3000
RN1106,LXHF(CT RN1106,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1106 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
48+ 0.37 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
DF2B7ACT,L3F DF2B7ACT,L3F Toshiba Semiconductor and Storage DF2B7ACT_datasheet_en_20180118.pdf?did=55582&prodName=DF2B7ACT Description: TVS DIODE 5.5VWM 20VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
Produkt ist nicht verfügbar
DF2B7ACT,L3F DF2B7ACT,L3F Toshiba Semiconductor and Storage DF2B7ACT_datasheet_en_20180118.pdf?did=55582&prodName=DF2B7ACT Description: TVS DIODE 5.5VWM 20VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 1859 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
79+ 0.22 EUR
163+ 0.11 EUR
500+ 0.09 EUR
1000+ 0.063 EUR
Mindestbestellmenge: 56
TC7USB42MU,LF(S2E TC7USB42MU,LF(S2E Toshiba Semiconductor and Storage Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.36 EUR
6000+ 0.33 EUR
15000+ 0.31 EUR
Mindestbestellmenge: 3000
TC7USB42MU,LF(S2E TC7USB42MU,LF(S2E Toshiba Semiconductor and Storage Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 20098 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+ 0.86 EUR
25+ 0.8 EUR
100+ 0.64 EUR
250+ 0.6 EUR
500+ 0.51 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 18
1SV228TPH3F 1SV228TPH3F Toshiba Semiconductor and Storage 1SV228_datasheet_en_20161219.pdf?did=2756&prodName=1SV228 Description: DIODE VARACTOR DUAL 15V SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 13.7pF @ 8V, 1MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: S-Mini
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
6000+ 0.22 EUR
Mindestbestellmenge: 3000
1SV228TPH3F 1SV228TPH3F Toshiba Semiconductor and Storage 1SV228_datasheet_en_20161219.pdf?did=2756&prodName=1SV228 Description: DIODE VARACTOR DUAL 15V SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 13.7pF @ 8V, 1MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: S-Mini
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.6
auf Bestellung 9480 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
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Mindestbestellmenge: 26
TDTC143E,LM TDTC143E,LM Toshiba Semiconductor and Storage TDTC143E_datasheet_en_20201113.pdf?did=36371&prodName=TDTC143E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
TDTC143E,LM TDTC143E,LM Toshiba Semiconductor and Storage TDTC143E_datasheet_en_20201113.pdf?did=36371&prodName=TDTC143E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 2683 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
SSM3J118TU,LF SSM3J118TU,LF Toshiba Semiconductor and Storage docget.jsp?did=7050&prodName=SSM3J118TU Description: PB-F SMALL LOW ON RESISTANCE PCH
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Produkt ist nicht verfügbar
SSM3J118TU,LF SSM3J118TU,LF Toshiba Semiconductor and Storage docget.jsp?did=7050&prodName=SSM3J118TU Description: PB-F SMALL LOW ON RESISTANCE PCH
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 24
SSM3J112TU,LF SSM3J112TU,LF Toshiba Semiconductor and Storage SSM3J112TU_datasheet_en_20140301.pdf?did=6112&prodName=SSM3J112TU Description: MOSFET P-CH 30V 1.1A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
Produkt ist nicht verfügbar
SSM3J112TU,LF SSM3J112TU,LF Toshiba Semiconductor and Storage SSM3J112TU_datasheet_en_20140301.pdf?did=6112&prodName=SSM3J112TU Description: MOSFET P-CH 30V 1.1A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
TLP5752(TP4,E TLP5752(TP4,E Toshiba Semiconductor and Storage docget.jsp?did=15367&prodName=TLP5752 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP5752(TP4,E TLP5752(TP4,E Toshiba Semiconductor and Storage docget.jsp?did=15367&prodName=TLP5752 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.12 EUR
10+ 2.75 EUR
100+ 2.11 EUR
500+ 1.91 EUR
Mindestbestellmenge: 5
TLP2710(D4-TP,E TLP2710(D4-TP,E Toshiba Semiconductor and Storage TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710 Description: HI SPEED LOGIC OUTPUT OPTOCOUPLE
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
TLP2710(D4-TP,E TLP2710(D4-TP,E Toshiba Semiconductor and Storage TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710 Description: HI SPEED LOGIC OUTPUT OPTOCOUPLE
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 1160 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
11+ 1.64 EUR
100+ 1.21 EUR
500+ 1.11 EUR
Mindestbestellmenge: 7
TPH9R00CQ5,LQ Toshiba Semiconductor and Storage Description: 150V U-MOS X-H SOP-ADVANCE(N) 9M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.76 EUR
Mindestbestellmenge: 5000
TPH9R00CQ5,LQ Toshiba Semiconductor and Storage Description: 150V U-MOS X-H SOP-ADVANCE(N) 9M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.05 EUR
10+ 3.36 EUR
100+ 2.68 EUR
500+ 2.26 EUR
1000+ 1.92 EUR
2000+ 1.83 EUR
Mindestbestellmenge: 5
TODX2710(FANUC,F) Toshiba Semiconductor and Storage Description: FIBER OPTIC TRANSMITTER
Packaging: Tube
Produkt ist nicht verfügbar
TODX2910(FANUC,F) Toshiba Semiconductor and Storage Description: FIBER OPTIC TRANSMITTER
Packaging: Tube
Produkt ist nicht verfügbar
TC74VHC373FK(EL,K) Toshiba Semiconductor and Storage Description: IC D-TYPE TRANSP SGL 8:8 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.52 EUR
Mindestbestellmenge: 2500
TC74VHC373FK(EL,K) Toshiba Semiconductor and Storage Description: IC D-TYPE TRANSP SGL 8:8 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
15+ 1.19 EUR
25+ 1.12 EUR
100+ 0.91 EUR
250+ 0.85 EUR
500+ 0.72 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
TK22V65X5,LQ Toshiba Semiconductor and Storage TK22V65X5_datasheet_en_20161008.pdf?did=54459&prodName=TK22V65X5 Description: PB-F POWER MOSFET TRANSISTOR DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+4.24 EUR
Mindestbestellmenge: 2500
TK22V65X5,LQ Toshiba Semiconductor and Storage TK22V65X5_datasheet_en_20161008.pdf?did=54459&prodName=TK22V65X5 Description: PB-F POWER MOSFET TRANSISTOR DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.69 EUR
10+ 7.31 EUR
100+ 5.92 EUR
500+ 5.26 EUR
1000+ 4.5 EUR
Mindestbestellmenge: 3
TLP700H(D4-MBSTP,F Toshiba Semiconductor and Storage TLP700H_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15µs, 8µs
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP700H(TP,F) Toshiba Semiconductor and Storage TLP700H_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15µs, 8µs
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP700HF(TP,F) Toshiba Semiconductor and Storage TLP700HF_Rev6.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP700HF(F) Toshiba Semiconductor and Storage TLP700HF_Rev6.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP700H(D4-TP,F) Toshiba Semiconductor and Storage TLP700H_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15µs, 8µs
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
74VHC138FT 74VHC138FT Toshiba Semiconductor and Storage TC74VHC138F%2CFN%2CFT%2CFK.pdf Description: IC DECODER 1 X 3:8 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
TMPM3HQFDAFG datasheet_en_20230707.pdf?did=139822
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 135
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.9 EUR
10+ 16.45 EUR
60+ 15.76 EUR
TMPM3HNF10BFG datasheet_en_20230428.pdf?did=151593
TMPM3HNF10BFG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 92
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.52 EUR
10+ 18.85 EUR
25+ 18.07 EUR
90+ 15.92 EUR
TMPM3HQF10BFG datasheet_en_20230428.pdf?did=151593
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 134
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+23.69 EUR
10+ 21.78 EUR
TDTA114E,LM TDTA114E_datasheet_en_20201113.pdf?did=36696&prodName=TDTA114E
TDTA114E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Produkt ist nicht verfügbar
TDTA114E,LM TDTA114E_datasheet_en_20201113.pdf?did=36696&prodName=TDTA114E
TDTA114E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
TC7WU04FU,LF docget.jsp?did=20208&prodName=TC7WU04FK
TC7WU04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
TC7WU04FU,LF docget.jsp?did=20208&prodName=TC7WU04FK
TC7WU04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
TDTA123J,LM TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F BIAS RESISTOR BUILT-IN TRAN
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.049 EUR
Mindestbestellmenge: 3000
TDTA123J,LM TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F BIAS RESISTOR BUILT-IN TRAN
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
88+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
TRS4V65H,LQ TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.34 EUR
Mindestbestellmenge: 2500
TRS4V65H,LQ TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 4997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.97 EUR
10+ 2.47 EUR
100+ 1.96 EUR
500+ 1.66 EUR
1000+ 1.41 EUR
Mindestbestellmenge: 6
TRS6V65H,LQ TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.69 EUR
Mindestbestellmenge: 2500
TRS6V65H,LQ TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.73 EUR
10+ 3.1 EUR
100+ 2.47 EUR
500+ 2.09 EUR
1000+ 1.77 EUR
Mindestbestellmenge: 5
TRS8V65H,LQ TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 8A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.01 EUR
Mindestbestellmenge: 2500
TRS8V65H,LQ TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 8A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.45 EUR
10+ 3.7 EUR
100+ 2.95 EUR
500+ 2.49 EUR
1000+ 2.12 EUR
Mindestbestellmenge: 4
TRS2E65H,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 2A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.82 EUR
10+ 2.51 EUR
100+ 1.96 EUR
Mindestbestellmenge: 7
TRS10V65H,LQ TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 10A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.26 EUR
5000+ 2.17 EUR
Mindestbestellmenge: 2500
TRS10V65H,LQ TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 10A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.65 EUR
10+ 3.9 EUR
100+ 3.16 EUR
500+ 2.81 EUR
1000+ 2.4 EUR
Mindestbestellmenge: 4
TRS3E65H,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 3A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 199pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 400 Stücke:
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Anzahl Preis ohne MwSt
7+2.92 EUR
10+ 2.63 EUR
100+ 2.11 EUR
Mindestbestellmenge: 7
TRS12V65H,LQ TRS12V65H_datasheet_en_20230410.pdf?did=152095&prodName=TRS12V65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 12A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.57 EUR
Mindestbestellmenge: 2500
TRS12V65H,LQ TRS12V65H_datasheet_en_20230410.pdf?did=152095&prodName=TRS12V65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 12A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 4962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.28 EUR
10+ 4.43 EUR
100+ 3.58 EUR
500+ 3.18 EUR
1000+ 2.73 EUR
Mindestbestellmenge: 4
TRS4E65H,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.34 EUR
10+ 3.01 EUR
100+ 2.42 EUR
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TRS6E65H,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.21 EUR
10+ 3.78 EUR
100+ 3.04 EUR
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TRS8E65H,S1Q TRS8E65H_datasheet_en_20230411.pdf?did=152121&prodName=TRS8E65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 8A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.44 EUR
10+ 3.67 EUR
100+ 2.92 EUR
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TRS10E65H,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 10A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.23 EUR
10+ 4.7 EUR
100+ 3.85 EUR
Mindestbestellmenge: 4
TRS12E65H,S1Q TRS12E65H_datasheet_en_20230411.pdf?did=152091&prodName=TRS12E65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 12A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.26 EUR
50+ 4.16 EUR
100+ 3.57 EUR
Mindestbestellmenge: 4
RN1106MFV,L3XHF(CT docget.jsp?did=5879&prodName=RN1106MFV
RN1106MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.091 EUR
Mindestbestellmenge: 8000
RN1106MFV,L3XHF(CT docget.jsp?did=5879&prodName=RN1106MFV
RN1106MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
36+ 0.49 EUR
100+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 30
RN1106,LXHF(CT docget.jsp?did=18746&prodName=RN1106
RN1106,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.094 EUR
Mindestbestellmenge: 3000
RN1106,LXHF(CT docget.jsp?did=18746&prodName=RN1106
RN1106,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
48+ 0.37 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
DF2B7ACT,L3F DF2B7ACT_datasheet_en_20180118.pdf?did=55582&prodName=DF2B7ACT
DF2B7ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
Produkt ist nicht verfügbar
DF2B7ACT,L3F DF2B7ACT_datasheet_en_20180118.pdf?did=55582&prodName=DF2B7ACT
DF2B7ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 1859 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
79+ 0.22 EUR
163+ 0.11 EUR
500+ 0.09 EUR
1000+ 0.063 EUR
Mindestbestellmenge: 56
TC7USB42MU,LF(S2E
TC7USB42MU,LF(S2E
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.36 EUR
6000+ 0.33 EUR
15000+ 0.31 EUR
Mindestbestellmenge: 3000
TC7USB42MU,LF(S2E
TC7USB42MU,LF(S2E
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 20098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.86 EUR
25+ 0.8 EUR
100+ 0.64 EUR
250+ 0.6 EUR
500+ 0.51 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 18
1SV228TPH3F 1SV228_datasheet_en_20161219.pdf?did=2756&prodName=1SV228
1SV228TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR DUAL 15V SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 13.7pF @ 8V, 1MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: S-Mini
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
Mindestbestellmenge: 3000
1SV228TPH3F 1SV228_datasheet_en_20161219.pdf?did=2756&prodName=1SV228
1SV228TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR DUAL 15V SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 13.7pF @ 8V, 1MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: S-Mini
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.6
auf Bestellung 9480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 26
TDTC143E,LM TDTC143E_datasheet_en_20201113.pdf?did=36371&prodName=TDTC143E
TDTC143E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
TDTC143E,LM TDTC143E_datasheet_en_20201113.pdf?did=36371&prodName=TDTC143E
TDTC143E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 2683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
SSM3J118TU,LF docget.jsp?did=7050&prodName=SSM3J118TU
SSM3J118TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F SMALL LOW ON RESISTANCE PCH
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Produkt ist nicht verfügbar
SSM3J118TU,LF docget.jsp?did=7050&prodName=SSM3J118TU
SSM3J118TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F SMALL LOW ON RESISTANCE PCH
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 24
SSM3J112TU,LF SSM3J112TU_datasheet_en_20140301.pdf?did=6112&prodName=SSM3J112TU
SSM3J112TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.1A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
Produkt ist nicht verfügbar
SSM3J112TU,LF SSM3J112TU_datasheet_en_20140301.pdf?did=6112&prodName=SSM3J112TU
SSM3J112TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.1A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
TLP5752(TP4,E docget.jsp?did=15367&prodName=TLP5752
TLP5752(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP5752(TP4,E docget.jsp?did=15367&prodName=TLP5752
TLP5752(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.12 EUR
10+ 2.75 EUR
100+ 2.11 EUR
500+ 1.91 EUR
Mindestbestellmenge: 5
TLP2710(D4-TP,E TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710
TLP2710(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: HI SPEED LOGIC OUTPUT OPTOCOUPLE
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
TLP2710(D4-TP,E TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710
TLP2710(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: HI SPEED LOGIC OUTPUT OPTOCOUPLE
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 1160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.59 EUR
11+ 1.64 EUR
100+ 1.21 EUR
500+ 1.11 EUR
Mindestbestellmenge: 7
TPH9R00CQ5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 150V U-MOS X-H SOP-ADVANCE(N) 9M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.76 EUR
Mindestbestellmenge: 5000
TPH9R00CQ5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 150V U-MOS X-H SOP-ADVANCE(N) 9M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.05 EUR
10+ 3.36 EUR
100+ 2.68 EUR
500+ 2.26 EUR
1000+ 1.92 EUR
2000+ 1.83 EUR
Mindestbestellmenge: 5
TODX2710(FANUC,F)
Hersteller: Toshiba Semiconductor and Storage
Description: FIBER OPTIC TRANSMITTER
Packaging: Tube
Produkt ist nicht verfügbar
TODX2910(FANUC,F)
Hersteller: Toshiba Semiconductor and Storage
Description: FIBER OPTIC TRANSMITTER
Packaging: Tube
Produkt ist nicht verfügbar
TC74VHC373FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE TRANSP SGL 8:8 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.52 EUR
Mindestbestellmenge: 2500
TC74VHC373FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE TRANSP SGL 8:8 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.36 EUR
15+ 1.19 EUR
25+ 1.12 EUR
100+ 0.91 EUR
250+ 0.85 EUR
500+ 0.72 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
TK22V65X5,LQ TK22V65X5_datasheet_en_20161008.pdf?did=54459&prodName=TK22V65X5
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+4.24 EUR
Mindestbestellmenge: 2500
TK22V65X5,LQ TK22V65X5_datasheet_en_20161008.pdf?did=54459&prodName=TK22V65X5
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.69 EUR
10+ 7.31 EUR
100+ 5.92 EUR
500+ 5.26 EUR
1000+ 4.5 EUR
Mindestbestellmenge: 3
TLP700H(D4-MBSTP,F TLP700H_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15µs, 8µs
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP700H(TP,F) TLP700H_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15µs, 8µs
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP700HF(TP,F) TLP700HF_Rev6.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP700HF(F) TLP700HF_Rev6.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP700H(D4-TP,F) TLP700H_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15µs, 8µs
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
74VHC138FT TC74VHC138F%2CFN%2CFT%2CFK.pdf
74VHC138FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC DECODER 1 X 3:8 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
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