Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13523) > Seite 204 nach 226

Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 154 176 198 199 200 201 202 203 204 205 206 207 208 209 220 226  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TLP2270(D4-LF4,E TLP2270(D4-LF4,E Toshiba Semiconductor and Storage TLP2270_datasheet_en_20191126.pdf?did=54624&prodName=TLP2270 Description: PHOTOCOUPLER; HI-SPEED; LOW INPU
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 2
Current - Output / Channel: 10 mA
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.01 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH1500CNH,L1Q TPH1500CNH,L1Q Toshiba Semiconductor and Storage TPH1500CNH_datasheet_en_20191017.pdf?did=14471&prodName=TPH1500CNH Description: MOSFET N-CH 150V 38A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH1500CNH,L1Q TPH1500CNH,L1Q Toshiba Semiconductor and Storage TPH1500CNH_datasheet_en_20191017.pdf?did=14471&prodName=TPH1500CNH Description: MOSFET N-CH 150V 38A 8SOP
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
auf Bestellung 5421 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.57 EUR
10+3.62 EUR
100+2.5 EUR
500+2.01 EUR
1000+1.93 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5231(TP,E TLP5231(TP,E Toshiba Semiconductor and Storage docget.jsp?did=68855&prodName=TLP5231 Description: OPTOISO 5KV 2CH GATE DVR 16SO
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.7V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 21.5V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 2
Pulse Width Distortion (Max): 150ns
Propagation Delay tpLH / tpHL (Max): 300ns, 300ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 50ns, 50ns
Supplier Device Package: 16-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5231(TP,E TLP5231(TP,E Toshiba Semiconductor and Storage docget.jsp?did=68855&prodName=TLP5231 Description: OPTOISO 5KV 2CH GATE DVR 16SO
Voltage - Output Supply: 21.5V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 2
Pulse Width Distortion (Max): 150ns
Propagation Delay tpLH / tpHL (Max): 300ns, 300ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 50ns, 50ns
Supplier Device Package: 16-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.7V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1286 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.5 EUR
10+7.28 EUR
100+5.64 EUR
500+4.99 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4984FE,LXHF(CT RN4984FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19048&prodName=RN4984FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.17 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4984FE,LXHF(CT RN4984FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19048&prodName=RN4984FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 7660 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.74 EUR
41+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.17 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MT4S300U(TE85L,O,F MT4S300U(TE85L,O,F Toshiba Semiconductor and Storage docget.jsp?did=14087&prodName=MT4S300U Description: RF TRANS NPN 4V 26.5GHZ USQ
Supplier Device Package: USQ
Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
Frequency - Transition: 26.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4V
Current - Collector (Ic) (Max): 50mA
Power - Max: 250mW
Gain: 16.9dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.69 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MT4S300U(TE85L,O,F MT4S300U(TE85L,O,F Toshiba Semiconductor and Storage docget.jsp?did=14087&prodName=MT4S300U Description: RF TRANS NPN 4V 26.5GHZ USQ
Supplier Device Package: USQ
Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
Frequency - Transition: 26.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4V
Current - Collector (Ic) (Max): 50mA
Power - Max: 250mW
Gain: 16.9dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Cut Tape (CT)
auf Bestellung 5848 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.15 EUR
22+0.99 EUR
25+0.93 EUR
100+0.86 EUR
250+0.81 EUR
500+0.77 EUR
1000+0.74 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK7P50D(T6RSS-Q) TK7P50D(T6RSS-Q) Toshiba Semiconductor and Storage TK7P50D_datasheet_en_20131101.pdf?did=2328&prodName=TK7P50D Description: MOSFET N-CH 500V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK7P50D(T6RSS-Q) TK7P50D(T6RSS-Q) Toshiba Semiconductor and Storage TK7P50D_datasheet_en_20131101.pdf?did=2328&prodName=TK7P50D Description: MOSFET N-CH 500V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 1939 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.49 EUR
10+2.87 EUR
100+1.95 EUR
500+1.56 EUR
1000+1.44 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CRZ15(TE85L,Q,M) CRZ15(TE85L,Q,M) Toshiba Semiconductor and Storage CRY62_datasheet_en_20141010.pdf?did=3175&prodName=CRY62 Description: DIODE ZENER 15V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CRZ15(TE85L,Q,M) CRZ15(TE85L,Q,M) Toshiba Semiconductor and Storage CRY62_datasheet_en_20141010.pdf?did=3175&prodName=CRY62 Description: DIODE ZENER 15V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
auf Bestellung 2595 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
27+0.79 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.35 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CMZ15(TE12L,Q,M) CMZ15(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12 Description: DIODE ZENER 15V 2W MFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CMZ15(TE12L,Q,M) CMZ15(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12 Description: DIODE ZENER 15V 2W MFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
auf Bestellung 2534 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.19 EUR
27+0.8 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP7930(F TLP7930(F Toshiba Semiconductor and Storage TLP7930_datasheet_en_20160509.pdf?did=35831&prodName=TLP7930 Description: IC ISOLATION AMP DIGITAL OUT
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Isolated Module
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-DIP
Number of Channels: 1
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.63 EUR
50+8.16 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK12P50W,RQ TK12P50W,RQ Toshiba Semiconductor and Storage TK12P50W_datasheet_en_20151208.pdf?did=53223&prodName=TK12P50W Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK12P50W,RQ TK12P50W,RQ Toshiba Semiconductor and Storage TK12P50W_datasheet_en_20151208.pdf?did=53223&prodName=TK12P50W Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 1887 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.15 EUR
10+3.33 EUR
100+2.3 EUR
500+1.84 EUR
1000+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CRS12(TE85L,Q,M) CRS12(TE85L,Q,M) Toshiba Semiconductor and Storage datasheet_en_20180709.pdf?did=19429 Description: DIODE SCHOTTKY 60V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CRS12(TE85L,Q,M) CRS12(TE85L,Q,M) Toshiba Semiconductor and Storage datasheet_en_20180709.pdf?did=19429 Description: DIODE SCHOTTKY 60V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 3781 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.49 EUR
23+0.93 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.4 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPD4163F,LF TPD4163F,LF Toshiba Semiconductor and Storage docget.jsp?did=152489&prodName=TPD4163F Description: 600V; IPD; 1A; HSSOP31
Packaging: Tape & Reel (TR)
Package / Case: 42-SOP (0.330", 8.40mm Width), 31 Leads, Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 31-HSSOP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+5.21 EUR
2000+5.09 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPD4163F,LF TPD4163F,LF Toshiba Semiconductor and Storage docget.jsp?did=152489&prodName=TPD4163F Description: 600V; IPD; 1A; HSSOP31
Packaging: Cut Tape (CT)
Package / Case: 42-SOP (0.330", 8.40mm Width), 31 Leads, Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 31-HSSOP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.13 EUR
10+6.95 EUR
25+6.41 EUR
100+5.81 EUR
250+5.55 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPD4164F,LF Toshiba Semiconductor and Storage TPD4164F_datasheet_en_20241023.pdf?did=152501&prodName=TPD4164F Description: 600V; IPD; 2A; HSSOP31
Packaging: Tape & Reel (TR)
Package / Case: 42-SOP (0.330", 8.40mm Width), 31 Leads, Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 13.5V ~ 450V
Supplier Device Package: 31-HSSOP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+6.12 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPD4164F,LF Toshiba Semiconductor and Storage TPD4164F_datasheet_en_20241023.pdf?did=152501&prodName=TPD4164F Description: 600V; IPD; 2A; HSSOP31
Packaging: Cut Tape (CT)
Package / Case: 42-SOP (0.330", 8.40mm Width), 31 Leads, Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 13.5V ~ 450V
Supplier Device Package: 31-HSSOP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.83 EUR
10+9.9 EUR
25+8.6 EUR
100+7.14 EUR
250+6.43 EUR
500+6.12 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7W66FK,LF TC7W66FK,LF Toshiba Semiconductor and Storage TC7W66FK_datasheet_en_20141023.pdf?did=20215&prodName=TC7W66FK Description: IC BILATERAL SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 12V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7W66FK,LF TC7W66FK,LF Toshiba Semiconductor and Storage TC7W66FK_datasheet_en_20141023.pdf?did=20215&prodName=TC7W66FK Description: IC BILATERAL SWITCH 1 X 1:1 US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 12V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
auf Bestellung 891 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.77 EUR
34+0.63 EUR
37+0.57 EUR
100+0.43 EUR
250+0.39 EUR
500+0.32 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA2097(TE16L1,NQ) 2SA2097(TE16L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=20461&prodName=2SA2097 Description: TRANS PNP 50V 5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.62 EUR
4000+0.57 EUR
6000+0.55 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA2097(TE16L1,NQ) 2SA2097(TE16L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=20461&prodName=2SA2097 Description: TRANS PNP 50V 5A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 7640 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA2142(TE16L1,NQ) 2SA2142(TE16L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=22764&prodName=2SA2142 Description: TRANS PNP 600V 0.5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.67 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA2142(TE16L1,NQ) 2SA2142(TE16L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=22764&prodName=2SA2142 Description: TRANS PNP 600V 0.5A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
auf Bestellung 2481 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.43 EUR
21+1.01 EUR
25+0.9 EUR
100+0.8 EUR
250+0.75 EUR
500+0.71 EUR
1000+0.69 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK2P60D(TE16L1,NV) Toshiba Semiconductor and Storage TK2P60D_datasheet_en_20131101.pdf?did=2372&prodName=TK2P60D Description: MOSFET N-CH 600V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5772H(TP,E TLP5772H(TP,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 1068 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.32 EUR
10+3.11 EUR
100+2.39 EUR
500+2.07 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5772H(D4-TP,E TLP5772H(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5772H(D4-TP,E TLP5772H(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.32 EUR
10+3.11 EUR
100+2.39 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2105MFV,L3XHF(CT RN2105MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2105MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.1 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2105MFV,L3XHF(CT RN2105MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2105MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.65 EUR
47+0.45 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG08ADP400E Toshiba Semiconductor and Storage eHDD-MG08-D_Product-Manual_r0.pdf Description: HDD 4TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLPN137(D4-TP1,F) TLPN137(D4-TP1,F) Toshiba Semiconductor and Storage TLPN137_datasheet_en_20170821.pdf?did=10189&prodName=TLPN137 Description: HIGH SPEED LOGIC OUTPUT COUPLER;
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 12ns, 3ns
Common Mode Transient Immunity (Min): 10kVµs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLPN137(D4-TP1,F) TLPN137(D4-TP1,F) Toshiba Semiconductor and Storage TLPN137_datasheet_en_20170821.pdf?did=10189&prodName=TLPN137 Description: HIGH SPEED LOGIC OUTPUT COUPLER;
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 12ns, 3ns
Common Mode Transient Immunity (Min): 10kVµs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.28 EUR
11+2.09 EUR
100+1.48 EUR
500+1.23 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HDWG21CXZSTA Toshiba Semiconductor and Storage TAEC393_Toshiba_Product_Sheet_N300_LowRes.pdf Description: N300 12TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+605.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HDWG51CXZSTB Toshiba Semiconductor and Storage Toshiba_N300Pro-SalesSheet_English-Web.pdf Description: N300PRO 12TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+715.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MC04ACA200E Toshiba Semiconductor and Storage eHDD-MC04ACAxxE-product-overview_EOL.pdf Description: TOMCAT CLOUD 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG04ACA200E Toshiba Semiconductor and Storage Description: TOMCAT 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG04ACA200A Toshiba Semiconductor and Storage Description: TOMCAT 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG04SCA20EA Toshiba Semiconductor and Storage eHDD-MG04SCAxxEx-product-overview.pdf Description: HDD 2TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG04SCA20EN Toshiba Semiconductor and Storage Description: TOMCAT-R 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG04SCA20EE Toshiba Semiconductor and Storage Description: TOMCAT-R 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R10AQM,LQ TPH3R10AQM,LQ Toshiba Semiconductor and Storage TPH3R10AQM_datasheet_en_20210817.pdf?did=140441&prodName=TPH3R10AQM Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R10AQM,LQ TPH3R10AQM,LQ Toshiba Semiconductor and Storage TPH3R10AQM_datasheet_en_20210817.pdf?did=140441&prodName=TPH3R10AQM Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
auf Bestellung 1165 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.09 EUR
10+3.27 EUR
100+2.25 EUR
500+1.81 EUR
1000+1.68 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HDWG440XZSTA Toshiba Semiconductor and Storage Toshiba_N300_SalesSheet_English_07-27-21.pdf Description: N300 4TB
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 65°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HDWG440XZSTB Toshiba Semiconductor and Storage Toshiba_N300Pro-SalesSheet_English-Web.pdf Description: N300PRO 4TB
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 60°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+317.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLP2367(TPL,E TLP2367(TPL,E Toshiba Semiconductor and Storage TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP2367(TPL,E TLP2367(TPL,E Toshiba Semiconductor and Storage TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.61 EUR
10+3.33 EUR
100+2.57 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6P816R,LF SSM6P816R,LF Toshiba Semiconductor and Storage docget.jsp?did=69472&prodName=SSM6P816R Description: MOSFET 2P-CH 20V 6A 6TSOPF
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6P816R,LF SSM6P816R,LF Toshiba Semiconductor and Storage docget.jsp?did=69472&prodName=SSM6P816R Description: MOSFET 2P-CH 20V 6A 6TSOPF
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 6743 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.49 EUR
23+0.92 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.4 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5705H(TP,E TLP5705H(TP,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5705H(TP,E TLP5705H(TP,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.83 EUR
10+2.46 EUR
100+1.76 EUR
500+1.48 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5705H(D4TP4,E TLP5705H(D4TP4,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.56 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5705H(D4TP4,E TLP5705H(D4TP4,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.96 EUR
10+2.55 EUR
100+1.82 EUR
500+1.54 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5705H(TP4,E TLP5705H(TP4,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP2270(D4-LF4,E TLP2270_datasheet_en_20191126.pdf?did=54624&prodName=TLP2270
TLP2270(D4-LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER; HI-SPEED; LOW INPU
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 2
Current - Output / Channel: 10 mA
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.01 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH1500CNH,L1Q TPH1500CNH_datasheet_en_20191017.pdf?did=14471&prodName=TPH1500CNH
TPH1500CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 38A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH1500CNH,L1Q TPH1500CNH_datasheet_en_20191017.pdf?did=14471&prodName=TPH1500CNH
TPH1500CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 38A 8SOP
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
auf Bestellung 5421 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.57 EUR
10+3.62 EUR
100+2.5 EUR
500+2.01 EUR
1000+1.93 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5231(TP,E docget.jsp?did=68855&prodName=TLP5231
TLP5231(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 16SO
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.7V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 21.5V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 2
Pulse Width Distortion (Max): 150ns
Propagation Delay tpLH / tpHL (Max): 300ns, 300ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 50ns, 50ns
Supplier Device Package: 16-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5231(TP,E docget.jsp?did=68855&prodName=TLP5231
TLP5231(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 16SO
Voltage - Output Supply: 21.5V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 2
Pulse Width Distortion (Max): 150ns
Propagation Delay tpLH / tpHL (Max): 300ns, 300ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 50ns, 50ns
Supplier Device Package: 16-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.7V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1286 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.5 EUR
10+7.28 EUR
100+5.64 EUR
500+4.99 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4984FE,LXHF(CT docget.jsp?did=19048&prodName=RN4984FE
RN4984FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.17 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4984FE,LXHF(CT docget.jsp?did=19048&prodName=RN4984FE
RN4984FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 7660 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
41+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.17 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MT4S300U(TE85L,O,F docget.jsp?did=14087&prodName=MT4S300U
MT4S300U(TE85L,O,F
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 4V 26.5GHZ USQ
Supplier Device Package: USQ
Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
Frequency - Transition: 26.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4V
Current - Collector (Ic) (Max): 50mA
Power - Max: 250mW
Gain: 16.9dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.69 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MT4S300U(TE85L,O,F docget.jsp?did=14087&prodName=MT4S300U
MT4S300U(TE85L,O,F
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 4V 26.5GHZ USQ
Supplier Device Package: USQ
Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
Frequency - Transition: 26.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4V
Current - Collector (Ic) (Max): 50mA
Power - Max: 250mW
Gain: 16.9dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Cut Tape (CT)
auf Bestellung 5848 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
22+0.99 EUR
25+0.93 EUR
100+0.86 EUR
250+0.81 EUR
500+0.77 EUR
1000+0.74 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK7P50D(T6RSS-Q) TK7P50D_datasheet_en_20131101.pdf?did=2328&prodName=TK7P50D
TK7P50D(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK7P50D(T6RSS-Q) TK7P50D_datasheet_en_20131101.pdf?did=2328&prodName=TK7P50D
TK7P50D(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 1939 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.49 EUR
10+2.87 EUR
100+1.95 EUR
500+1.56 EUR
1000+1.44 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CRZ15(TE85L,Q,M) CRY62_datasheet_en_20141010.pdf?did=3175&prodName=CRY62
CRZ15(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 15V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CRZ15(TE85L,Q,M) CRY62_datasheet_en_20141010.pdf?did=3175&prodName=CRY62
CRZ15(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 15V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
auf Bestellung 2595 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
27+0.79 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.35 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CMZ15(TE12L,Q,M) CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12
CMZ15(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 15V 2W MFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CMZ15(TE12L,Q,M) CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12
CMZ15(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 15V 2W MFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
auf Bestellung 2534 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
27+0.8 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP7930(F TLP7930_datasheet_en_20160509.pdf?did=35831&prodName=TLP7930
TLP7930(F
Hersteller: Toshiba Semiconductor and Storage
Description: IC ISOLATION AMP DIGITAL OUT
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Isolated Module
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-DIP
Number of Channels: 1
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.63 EUR
50+8.16 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK12P50W,RQ TK12P50W_datasheet_en_20151208.pdf?did=53223&prodName=TK12P50W
TK12P50W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK12P50W,RQ TK12P50W_datasheet_en_20151208.pdf?did=53223&prodName=TK12P50W
TK12P50W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 1887 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.15 EUR
10+3.33 EUR
100+2.3 EUR
500+1.84 EUR
1000+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CRS12(TE85L,Q,M) datasheet_en_20180709.pdf?did=19429
CRS12(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CRS12(TE85L,Q,M) datasheet_en_20180709.pdf?did=19429
CRS12(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 3781 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.49 EUR
23+0.93 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.4 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPD4163F,LF docget.jsp?did=152489&prodName=TPD4163F
TPD4163F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: 600V; IPD; 1A; HSSOP31
Packaging: Tape & Reel (TR)
Package / Case: 42-SOP (0.330", 8.40mm Width), 31 Leads, Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 31-HSSOP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+5.21 EUR
2000+5.09 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPD4163F,LF docget.jsp?did=152489&prodName=TPD4163F
TPD4163F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: 600V; IPD; 1A; HSSOP31
Packaging: Cut Tape (CT)
Package / Case: 42-SOP (0.330", 8.40mm Width), 31 Leads, Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 31-HSSOP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.13 EUR
10+6.95 EUR
25+6.41 EUR
100+5.81 EUR
250+5.55 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPD4164F,LF TPD4164F_datasheet_en_20241023.pdf?did=152501&prodName=TPD4164F
Hersteller: Toshiba Semiconductor and Storage
Description: 600V; IPD; 2A; HSSOP31
Packaging: Tape & Reel (TR)
Package / Case: 42-SOP (0.330", 8.40mm Width), 31 Leads, Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 13.5V ~ 450V
Supplier Device Package: 31-HSSOP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+6.12 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPD4164F,LF TPD4164F_datasheet_en_20241023.pdf?did=152501&prodName=TPD4164F
Hersteller: Toshiba Semiconductor and Storage
Description: 600V; IPD; 2A; HSSOP31
Packaging: Cut Tape (CT)
Package / Case: 42-SOP (0.330", 8.40mm Width), 31 Leads, Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 13.5V ~ 450V
Supplier Device Package: 31-HSSOP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.83 EUR
10+9.9 EUR
25+8.6 EUR
100+7.14 EUR
250+6.43 EUR
500+6.12 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7W66FK,LF TC7W66FK_datasheet_en_20141023.pdf?did=20215&prodName=TC7W66FK
TC7W66FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BILATERAL SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 12V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7W66FK,LF TC7W66FK_datasheet_en_20141023.pdf?did=20215&prodName=TC7W66FK
TC7W66FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BILATERAL SWITCH 1 X 1:1 US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 12V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
auf Bestellung 891 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
34+0.63 EUR
37+0.57 EUR
100+0.43 EUR
250+0.39 EUR
500+0.32 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA2097(TE16L1,NQ) docget.jsp?did=20461&prodName=2SA2097
2SA2097(TE16L1,NQ)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.62 EUR
4000+0.57 EUR
6000+0.55 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA2097(TE16L1,NQ) docget.jsp?did=20461&prodName=2SA2097
2SA2097(TE16L1,NQ)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 7640 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA2142(TE16L1,NQ) docget.jsp?did=22764&prodName=2SA2142
2SA2142(TE16L1,NQ)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 600V 0.5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.67 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA2142(TE16L1,NQ) docget.jsp?did=22764&prodName=2SA2142
2SA2142(TE16L1,NQ)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 600V 0.5A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
auf Bestellung 2481 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
21+1.01 EUR
25+0.9 EUR
100+0.8 EUR
250+0.75 EUR
500+0.71 EUR
1000+0.69 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK2P60D(TE16L1,NV) TK2P60D_datasheet_en_20131101.pdf?did=2372&prodName=TK2P60D
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5772H(TP,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 1068 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.32 EUR
10+3.11 EUR
100+2.39 EUR
500+2.07 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5772H(D4-TP,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5772H(D4-TP,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.32 EUR
10+3.11 EUR
100+2.39 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2105MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2105MFV
RN2105MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.1 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2105MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2105MFV
RN2105MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
47+0.45 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG08ADP400E eHDD-MG08-D_Product-Manual_r0.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLPN137(D4-TP1,F) TLPN137_datasheet_en_20170821.pdf?did=10189&prodName=TLPN137
TLPN137(D4-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT COUPLER;
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 12ns, 3ns
Common Mode Transient Immunity (Min): 10kVµs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLPN137(D4-TP1,F) TLPN137_datasheet_en_20170821.pdf?did=10189&prodName=TLPN137
TLPN137(D4-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT COUPLER;
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 12ns, 3ns
Common Mode Transient Immunity (Min): 10kVµs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.28 EUR
11+2.09 EUR
100+1.48 EUR
500+1.23 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HDWG21CXZSTA TAEC393_Toshiba_Product_Sheet_N300_LowRes.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: N300 12TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+605.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HDWG51CXZSTB Toshiba_N300Pro-SalesSheet_English-Web.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: N300PRO 12TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+715.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MC04ACA200E eHDD-MC04ACAxxE-product-overview_EOL.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TOMCAT CLOUD 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG04ACA200E
Hersteller: Toshiba Semiconductor and Storage
Description: TOMCAT 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG04ACA200A
Hersteller: Toshiba Semiconductor and Storage
Description: TOMCAT 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG04SCA20EA eHDD-MG04SCAxxEx-product-overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 2TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG04SCA20EN
Hersteller: Toshiba Semiconductor and Storage
Description: TOMCAT-R 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MG04SCA20EE
Hersteller: Toshiba Semiconductor and Storage
Description: TOMCAT-R 2TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R10AQM,LQ TPH3R10AQM_datasheet_en_20210817.pdf?did=140441&prodName=TPH3R10AQM
TPH3R10AQM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R10AQM,LQ TPH3R10AQM_datasheet_en_20210817.pdf?did=140441&prodName=TPH3R10AQM
TPH3R10AQM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
auf Bestellung 1165 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.09 EUR
10+3.27 EUR
100+2.25 EUR
500+1.81 EUR
1000+1.68 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HDWG440XZSTA Toshiba_N300_SalesSheet_English_07-27-21.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: N300 4TB
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 65°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HDWG440XZSTB Toshiba_N300Pro-SalesSheet_English-Web.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: N300PRO 4TB
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 60°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+317.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLP2367(TPL,E TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367
TLP2367(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP2367(TPL,E TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367
TLP2367(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.61 EUR
10+3.33 EUR
100+2.57 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6P816R,LF docget.jsp?did=69472&prodName=SSM6P816R
SSM6P816R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 6A 6TSOPF
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6P816R,LF docget.jsp?did=69472&prodName=SSM6P816R
SSM6P816R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 6A 6TSOPF
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 6743 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.49 EUR
23+0.92 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.4 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5705H(TP,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5705H(TP,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.83 EUR
10+2.46 EUR
100+1.76 EUR
500+1.48 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5705H(D4TP4,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.56 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5705H(D4TP4,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.96 EUR
10+2.55 EUR
100+1.82 EUR
500+1.54 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5705H(TP4,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 154 176 198 199 200 201 202 203 204 205 206 207 208 209 220 226  [ Nächste Seite >> ]