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TLP151A(V4-TPL,E TLP151A(V4-TPL,E Toshiba Semiconductor and Storage TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP151A(V4-TPL,E TLP151A(V4-TPL,E Toshiba Semiconductor and Storage TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
11+1.66 EUR
100+1.25 EUR
500+1.07 EUR
Mindestbestellmenge: 8
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TK7E80W,S1X TK7E80W,S1X Toshiba Semiconductor and Storage TK7E80W_datasheet_en_20161008.pdf?did=55442&prodName=TK7E80W Description: MOSFET N-CH 800V 6.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.91 EUR
10+3.88 EUR
Mindestbestellmenge: 3
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2SC5712(TE12L,F) 2SC5712(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=20740&prodName=2SC5712 Description: TRANS NPN 50V 3A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.29 EUR
Mindestbestellmenge: 1000
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2SC5712(TE12L,F) 2SC5712(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=20740&prodName=2SC5712 Description: TRANS NPN 50V 3A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 1830 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
Mindestbestellmenge: 17
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RN1911FE,LXHF(CT RN1911FE,LXHF(CT Toshiba Semiconductor and Storage RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE Description: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
Mindestbestellmenge: 4000
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RN1911FE,LXHF(CT RN1911FE,LXHF(CT Toshiba Semiconductor and Storage RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE Description: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7980 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
43+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
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TDTC144E,LM TDTC144E,LM Toshiba Semiconductor and Storage TDTC144E_datasheet_en_20201113.pdf?did=36376&prodName=TDTC144E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 77 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.04 EUR
Mindestbestellmenge: 3000
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TDTC144E,LM TDTC144E,LM Toshiba Semiconductor and Storage TDTC144E_datasheet_en_20201113.pdf?did=36376&prodName=TDTC144E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 77 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
113+0.16 EUR
182+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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TLP631(GR-TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(BL-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(Y,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(GB-TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(GB-LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(TP5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(BL-LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(LF5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TC74VCX574FTEL TC74VCX574FTEL Toshiba Semiconductor and Storage Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 6 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.2ns @ 3.3V, 30pF
Part Status: Not For New Designs
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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TC74VCX574FTEL TC74VCX574FTEL Toshiba Semiconductor and Storage Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 6 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.2ns @ 3.3V, 30pF
Part Status: Not For New Designs
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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TPH5200FNH,L1Q TPH5200FNH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14486&prodName=TPH5200FNH Description: MOSFET N-CH 250V 26A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.82 EUR
Mindestbestellmenge: 5000
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TPH5200FNH,L1Q TPH5200FNH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14486&prodName=TPH5200FNH Description: MOSFET N-CH 250V 26A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 14969 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.98 EUR
10+3.41 EUR
100+2.44 EUR
500+2.23 EUR
Mindestbestellmenge: 4
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TPH5R60APL,L1Q TPH5R60APL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=60586&prodName=TPH5R60APL Description: PB-F POWER MOSFET TRANSISTOR N-C
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.82 EUR
Mindestbestellmenge: 5000
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TPH5R60APL,L1Q TPH5R60APL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=60586&prodName=TPH5R60APL Description: PB-F POWER MOSFET TRANSISTOR N-C
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 7942 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.10 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.89 EUR
Mindestbestellmenge: 6
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TC7SZ14FU,LJ(CT TC7SZ14FU,LJ(CT Toshiba Semiconductor and Storage TC7SZ14F_datasheet_en_20171221.pdf?did=20046&prodName=TC7SZ14F Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.09 EUR
6000+0.08 EUR
9000+0.07 EUR
15000+0.07 EUR
21000+0.07 EUR
30000+0.06 EUR
Mindestbestellmenge: 3000
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TC7SZ14FU,LJ(CT TC7SZ14FU,LJ(CT Toshiba Semiconductor and Storage TC7SZ14F_datasheet_en_20171221.pdf?did=20046&prodName=TC7SZ14F Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 56169 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
64+0.28 EUR
78+0.23 EUR
105+0.17 EUR
250+0.14 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 38
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TPH4R803PL,LQ TPH4R803PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=58408&prodName=TPH4R803PL Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.51 EUR
Mindestbestellmenge: 3000
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TPH4R803PL,LQ TPH4R803PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=58408&prodName=TPH4R803PL Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 4979 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
18+1.00 EUR
100+0.69 EUR
500+0.60 EUR
1000+0.55 EUR
Mindestbestellmenge: 15
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TPH4R008QM,LQ TPH4R008QM,LQ Toshiba Semiconductor and Storage docget.jsp?did=68914&prodName=TPH4R008QM Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
auf Bestellung 5000 Stücke:
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TPH4R008QM,LQ TPH4R008QM,LQ Toshiba Semiconductor and Storage docget.jsp?did=68914&prodName=TPH4R008QM Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
auf Bestellung 5668 Stücke:
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DF2S6M4CT,L3F DF2S6M4CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=56015&prodName=DF2S6M4CT Description: TVS DIODE 5.5VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2S6M4CT,L3F DF2S6M4CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=56015&prodName=DF2S6M4CT Description: TVS DIODE 5.5VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 24834 Stücke:
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253+0.07 EUR
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TPH7R204PL,LQ TPH7R204PL,LQ Toshiba Semiconductor and Storage TPH7R204PL_datasheet_en_20170412.pdf?did=55434&prodName=TPH7R204PL Description: MOSFET N-CH 40V 48A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
auf Bestellung 4176 Stücke:
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TDTA143E,LM TDTA143E,LM Toshiba Semiconductor and Storage docget.jsp?did=36366&prodName=TDTA143E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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TDTA143E,LM TDTA143E,LM Toshiba Semiconductor and Storage docget.jsp?did=36366&prodName=TDTA143E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 2840 Stücke:
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500+0.07 EUR
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TDTA144E,LM TDTA144E,LM Toshiba Semiconductor and Storage docget.jsp?did=36370&prodName=TDTA144E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 88 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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TDTA144E,LM TDTA144E,LM Toshiba Semiconductor and Storage docget.jsp?did=36370&prodName=TDTA144E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 88 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
120+0.15 EUR
193+0.09 EUR
500+0.07 EUR
1000+0.06 EUR
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CUHS15S60,H3F CUHS15S60,H3F Toshiba Semiconductor and Storage docget.jsp?did=70195&prodName=CUHS15S60 Description: DIODE SCHOTTKY 60V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Produkt ist nicht verfügbar
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CUHS15S60,H3F CUHS15S60,H3F Toshiba Semiconductor and Storage docget.jsp?did=70195&prodName=CUHS15S60 Description: DIODE SCHOTTKY 60V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
auf Bestellung 2895 Stücke:
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42+0.42 EUR
63+0.28 EUR
100+0.18 EUR
500+0.16 EUR
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CUHZ6V8,H3F CUHZ6V8,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ8V2 Description: TVS DIODE 6.8VWM 7.2VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 585pF @ 1MHz
Current - Peak Pulse (10/1000µs): 73A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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CUHZ6V8,H3F CUHZ6V8,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ8V2 Description: TVS DIODE 6.8VWM 7.2VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 585pF @ 1MHz
Current - Peak Pulse (10/1000µs): 73A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
auf Bestellung 1580 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
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100+0.30 EUR
500+0.22 EUR
1000+0.20 EUR
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RN4988,LXHF(CT RN4988,LXHF(CT Toshiba Semiconductor and Storage RN4988_datasheet_en_20210824.pdf?did=18987&prodName=RN4988 Description: AUTO AEC-Q TR NPN + PNP BRT, Q1B
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.09 EUR
Mindestbestellmenge: 3000
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RN4988,LXHF(CT RN4988,LXHF(CT Toshiba Semiconductor and Storage RN4988_datasheet_en_20210824.pdf?did=18987&prodName=RN4988 Description: AUTO AEC-Q TR NPN + PNP BRT, Q1B
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
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100+0.22 EUR
500+0.16 EUR
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RN4988FE,LXHF(CT RN4988FE,LXHF(CT Toshiba Semiconductor and Storage RN4988FE_datasheet_en_20210818.pdf?did=19056&prodName=RN4988FE Description: AUTO AEC-Q TR NPN+PNP Q1BSR=22KO
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
Mindestbestellmenge: 4000
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RN4988FE,LXHF(CT RN4988FE,LXHF(CT Toshiba Semiconductor and Storage RN4988FE_datasheet_en_20210818.pdf?did=19056&prodName=RN4988FE Description: AUTO AEC-Q TR NPN+PNP Q1BSR=22KO
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
43+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
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TC78B004FTG,EL Toshiba Semiconductor and Storage TC78B004FTG_datasheet_en_20171025.pdf Description: SENSORED BRUSHLESS MOTOR CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.79 EUR
Mindestbestellmenge: 4000
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TC78B004FTG,EL Toshiba Semiconductor and Storage TC78B004FTG_datasheet_en_20171025.pdf Description: SENSORED BRUSHLESS MOTOR CONTROL
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.52 EUR
10+2.61 EUR
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100+2.13 EUR
250+2.01 EUR
500+1.94 EUR
1000+1.88 EUR
Mindestbestellmenge: 5
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TOCP200K(SUMID) Toshiba Semiconductor and Storage Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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P555(S) Toshiba Semiconductor and Storage Description: OPTOCOUPLER SO6
Packaging: Tube
Produkt ist nicht verfügbar
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TLP785(Y-LF6,F Toshiba Semiconductor and Storage TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785 Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TOCP200QK Toshiba Semiconductor and Storage Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TOCP255K(SUMID) Toshiba Semiconductor and Storage Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TC7S00F,LF TC7S00F,LF Toshiba Semiconductor and Storage TC7S00FU_datasheet_en_20140301.pdf?did=20177&prodName=TC7S00FU Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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RN2901,LXHF(CT RN2901,LXHF(CT Toshiba Semiconductor and Storage RN2905_datasheet_en_20230112.pdf?did=18907&prodName=RN2905 Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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RN2901,LXHF(CT RN2901,LXHF(CT Toshiba Semiconductor and Storage RN2905_datasheet_en_20230112.pdf?did=18907&prodName=RN2905 Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
31+0.59 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 23
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RN2901FE,LXHF(CT RN2901FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19092&prodName=RN2901FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.15 EUR
8000+0.14 EUR
Mindestbestellmenge: 4000
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RN2901FE,LXHF(CT RN2901FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19092&prodName=RN2901FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
36+0.50 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.15 EUR
Mindestbestellmenge: 27
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74LCX157FT 74LCX157FT Toshiba Semiconductor and Storage 74LCX157FT_datasheet_en_20160915.pdf?did=15433&prodName=74LCX157FT Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Produkt ist nicht verfügbar
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74LCX157FT 74LCX157FT Toshiba Semiconductor and Storage 74LCX157FT_datasheet_en_20160915.pdf?did=15433&prodName=74LCX157FT Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
35+0.52 EUR
38+0.47 EUR
100+0.35 EUR
250+0.32 EUR
500+0.26 EUR
1000+0.20 EUR
Mindestbestellmenge: 28
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TLP151A(V4-TPL,E TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A
TLP151A(V4-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP151A(V4-TPL,E TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A
TLP151A(V4-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
11+1.66 EUR
100+1.25 EUR
500+1.07 EUR
Mindestbestellmenge: 8
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TK7E80W,S1X TK7E80W_datasheet_en_20161008.pdf?did=55442&prodName=TK7E80W
TK7E80W,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 6.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.91 EUR
10+3.88 EUR
Mindestbestellmenge: 3
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2SC5712(TE12L,F) docget.jsp?did=20740&prodName=2SC5712
2SC5712(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.29 EUR
Mindestbestellmenge: 1000
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2SC5712(TE12L,F) docget.jsp?did=20740&prodName=2SC5712
2SC5712(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 1830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
Mindestbestellmenge: 17
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RN1911FE,LXHF(CT RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE
RN1911FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.13 EUR
Mindestbestellmenge: 4000
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RN1911FE,LXHF(CT RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE
RN1911FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
43+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
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TDTC144E,LM TDTC144E_datasheet_en_20201113.pdf?did=36376&prodName=TDTC144E
TDTC144E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 77 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.04 EUR
Mindestbestellmenge: 3000
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TDTC144E,LM TDTC144E_datasheet_en_20201113.pdf?did=36376&prodName=TDTC144E
TDTC144E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 77 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
113+0.16 EUR
182+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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TLP631(GR-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(BL-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP631(Y,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP631(GB-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP631(GB-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(TP5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP631(BL-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP631(LF5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC74VCX574FTEL
TC74VCX574FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 6 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.2ns @ 3.3V, 30pF
Part Status: Not For New Designs
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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TC74VCX574FTEL
TC74VCX574FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 6 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.2ns @ 3.3V, 30pF
Part Status: Not For New Designs
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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TPH5200FNH,L1Q docget.jsp?did=14486&prodName=TPH5200FNH
TPH5200FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 26A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.82 EUR
Mindestbestellmenge: 5000
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TPH5200FNH,L1Q docget.jsp?did=14486&prodName=TPH5200FNH
TPH5200FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 26A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 14969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.98 EUR
10+3.41 EUR
100+2.44 EUR
500+2.23 EUR
Mindestbestellmenge: 4
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TPH5R60APL,L1Q docget.jsp?did=60586&prodName=TPH5R60APL
TPH5R60APL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR N-C
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.82 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPH5R60APL,L1Q docget.jsp?did=60586&prodName=TPH5R60APL
TPH5R60APL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR N-C
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 7942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.10 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.89 EUR
Mindestbestellmenge: 6
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TC7SZ14FU,LJ(CT TC7SZ14F_datasheet_en_20171221.pdf?did=20046&prodName=TC7SZ14F
TC7SZ14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
9000+0.07 EUR
15000+0.07 EUR
21000+0.07 EUR
30000+0.06 EUR
Mindestbestellmenge: 3000
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TC7SZ14FU,LJ(CT TC7SZ14F_datasheet_en_20171221.pdf?did=20046&prodName=TC7SZ14F
TC7SZ14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 56169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
64+0.28 EUR
78+0.23 EUR
105+0.17 EUR
250+0.14 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 38
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TPH4R803PL,LQ docget.jsp?did=58408&prodName=TPH4R803PL
TPH4R803PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.51 EUR
Mindestbestellmenge: 3000
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TPH4R803PL,LQ docget.jsp?did=58408&prodName=TPH4R803PL
TPH4R803PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 4979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
18+1.00 EUR
100+0.69 EUR
500+0.60 EUR
1000+0.55 EUR
Mindestbestellmenge: 15
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TPH4R008QM,LQ docget.jsp?did=68914&prodName=TPH4R008QM
TPH4R008QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.75 EUR
Mindestbestellmenge: 5000
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TPH4R008QM,LQ docget.jsp?did=68914&prodName=TPH4R008QM
TPH4R008QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
auf Bestellung 5668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
12+1.48 EUR
100+1.14 EUR
500+0.98 EUR
1000+0.91 EUR
Mindestbestellmenge: 9
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DF2S6M4CT,L3F docget.jsp?did=56015&prodName=DF2S6M4CT
DF2S6M4CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2S6M4CT,L3F docget.jsp?did=56015&prodName=DF2S6M4CT
DF2S6M4CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 24834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
109+0.16 EUR
253+0.07 EUR
500+0.07 EUR
1000+0.06 EUR
5000+0.06 EUR
Mindestbestellmenge: 77
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TPH7R204PL,LQ TPH7R204PL_datasheet_en_20170412.pdf?did=55434&prodName=TPH7R204PL
TPH7R204PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 48A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
auf Bestellung 4176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.47 EUR
Mindestbestellmenge: 11
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TDTA143E,LM docget.jsp?did=36366&prodName=TDTA143E
TDTA143E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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TDTA143E,LM docget.jsp?did=36366&prodName=TDTA143E
TDTA143E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
120+0.15 EUR
192+0.09 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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TDTA144E,LM docget.jsp?did=36370&prodName=TDTA144E
TDTA144E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 88 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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TDTA144E,LM docget.jsp?did=36370&prodName=TDTA144E
TDTA144E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 88 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
120+0.15 EUR
193+0.09 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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CUHS15S60,H3F docget.jsp?did=70195&prodName=CUHS15S60
CUHS15S60,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Produkt ist nicht verfügbar
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CUHS15S60,H3F docget.jsp?did=70195&prodName=CUHS15S60
CUHS15S60,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
auf Bestellung 2895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
63+0.28 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 42
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CUHZ6V8,H3F docget.jsp?did=70664&prodName=CUHZ8V2
CUHZ6V8,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.8VWM 7.2VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 585pF @ 1MHz
Current - Peak Pulse (10/1000µs): 73A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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CUHZ6V8,H3F docget.jsp?did=70664&prodName=CUHZ8V2
CUHZ6V8,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.8VWM 7.2VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 585pF @ 1MHz
Current - Peak Pulse (10/1000µs): 73A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
auf Bestellung 1580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
43+0.42 EUR
100+0.30 EUR
500+0.22 EUR
1000+0.20 EUR
Mindestbestellmenge: 28
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RN4988,LXHF(CT RN4988_datasheet_en_20210824.pdf?did=18987&prodName=RN4988
RN4988,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPN + PNP BRT, Q1B
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
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RN4988,LXHF(CT RN4988_datasheet_en_20210824.pdf?did=18987&prodName=RN4988
RN4988,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPN + PNP BRT, Q1B
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
RN4988FE,LXHF(CT RN4988FE_datasheet_en_20210818.pdf?did=19056&prodName=RN4988FE
RN4988FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPN+PNP Q1BSR=22KO
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.13 EUR
Mindestbestellmenge: 4000
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RN4988FE,LXHF(CT RN4988FE_datasheet_en_20210818.pdf?did=19056&prodName=RN4988FE
RN4988FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPN+PNP Q1BSR=22KO
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
43+0.42 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
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TC78B004FTG,EL TC78B004FTG_datasheet_en_20171025.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: SENSORED BRUSHLESS MOTOR CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+1.79 EUR
Mindestbestellmenge: 4000
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TC78B004FTG,EL TC78B004FTG_datasheet_en_20171025.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: SENSORED BRUSHLESS MOTOR CONTROL
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.61 EUR
25+2.38 EUR
100+2.13 EUR
250+2.01 EUR
500+1.94 EUR
1000+1.88 EUR
Mindestbestellmenge: 5
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TOCP200K(SUMID)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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P555(S)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER SO6
Packaging: Tube
Produkt ist nicht verfügbar
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TLP785(Y-LF6,F TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TOCP200QK
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TOCP255K(SUMID)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TC7S00F,LF TC7S00FU_datasheet_en_20140301.pdf?did=20177&prodName=TC7S00FU
TC7S00F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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RN2901,LXHF(CT RN2905_datasheet_en_20230112.pdf?did=18907&prodName=RN2905
RN2901,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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RN2901,LXHF(CT RN2905_datasheet_en_20230112.pdf?did=18907&prodName=RN2905
RN2901,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
31+0.59 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 23
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RN2901FE,LXHF(CT docget.jsp?did=19092&prodName=RN2901FE
RN2901FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.15 EUR
8000+0.14 EUR
Mindestbestellmenge: 4000
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RN2901FE,LXHF(CT docget.jsp?did=19092&prodName=RN2901FE
RN2901FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
36+0.50 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.15 EUR
Mindestbestellmenge: 27
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74LCX157FT 74LCX157FT_datasheet_en_20160915.pdf?did=15433&prodName=74LCX157FT
74LCX157FT
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Produkt ist nicht verfügbar
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74LCX157FT 74LCX157FT_datasheet_en_20160915.pdf?did=15433&prodName=74LCX157FT
74LCX157FT
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
35+0.52 EUR
38+0.47 EUR
100+0.35 EUR
250+0.32 EUR
500+0.26 EUR
1000+0.20 EUR
Mindestbestellmenge: 28
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