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TLP5754(TP4,E TLP5754(TP4,E Toshiba Semiconductor and Storage TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1500 Stücke:
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1500+2.68 EUR
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TLP5754(TP4,E TLP5754(TP4,E Toshiba Semiconductor and Storage TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2377 Stücke:
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4+5.51 EUR
10+4.01 EUR
100+3.12 EUR
500+2.73 EUR
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TC7SPB9306TU,LF(CT TC7SPB9306TU,LF(CT Toshiba Semiconductor and Storage TC7SPB9306TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9306TU Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
Produkt ist nicht verfügbar
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TC7SPB9306TU,LF(CT TC7SPB9306TU,LF(CT Toshiba Semiconductor and Storage TC7SPB9306TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9306TU Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
auf Bestellung 1668 Stücke:
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26+0.82 EUR
33+0.65 EUR
36+0.6 EUR
100+0.44 EUR
250+0.4 EUR
500+0.33 EUR
1000+0.25 EUR
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TC7MPB9307FK(EL) TC7MPB9307FK(EL) Toshiba Semiconductor and Storage TC7MPB9307FK_datasheet_en_20220824.pdf?did=61841&prodName=TC7MPB9307FK Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
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2500+0.64 EUR
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TC7MPB9307FK(EL) TC7MPB9307FK(EL) Toshiba Semiconductor and Storage TC7MPB9307FK_datasheet_en_20220824.pdf?did=61841&prodName=TC7MPB9307FK Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-VSSOP
auf Bestellung 5586 Stücke:
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13+1.71 EUR
14+1.54 EUR
25+1.45 EUR
100+1.19 EUR
250+1.12 EUR
500+0.99 EUR
1000+0.77 EUR
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TC7MPB9327FT(EL) TC7MPB9327FT(EL) Toshiba Semiconductor and Storage TC7MPB9327FT_datasheet_en_20170223.pdf Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:2
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
auf Bestellung 2000 Stücke:
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2000+0.44 EUR
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TC7MPB9327FT(EL) TC7MPB9327FT(EL) Toshiba Semiconductor and Storage TC7MPB9327FT_datasheet_en_20170223.pdf Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:2
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
auf Bestellung 2000 Stücke:
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17+1.24 EUR
20+1.06 EUR
25+0.99 EUR
100+0.8 EUR
250+0.74 EUR
500+0.62 EUR
1000+0.48 EUR
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TBAT54A,LM TBAT54A,LM Toshiba Semiconductor and Storage docget.jsp?did=37137&prodName=TBAT54A Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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TBAT54A,LM TBAT54A,LM Toshiba Semiconductor and Storage docget.jsp?did=37137&prodName=TBAT54A Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 1810 Stücke:
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56+0.38 EUR
94+0.23 EUR
132+0.15 EUR
152+0.14 EUR
500+0.1 EUR
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TB6613FTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=11241&prodName=TB6613FTG Description: 8 H-BRIDGE DRIVER, CAN BE CONFIG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN4989(TE85L,F) RN4989(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18989&prodName=RN4989 Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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RN4989(TE85L,F) RN4989(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18989&prodName=RN4989 Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
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30+0.71 EUR
40+0.54 EUR
100+0.3 EUR
500+0.2 EUR
1000+0.15 EUR
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TLP151A(TPL,E TLP151A(TPL,E Toshiba Semiconductor and Storage TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 6000 Stücke:
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3000+1.33 EUR
6000+1.27 EUR
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TLP151A(TPL,E TLP151A(TPL,E Toshiba Semiconductor and Storage TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 7106 Stücke:
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7+3.28 EUR
10+2.34 EUR
100+1.77 EUR
500+1.52 EUR
1000+1.44 EUR
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TMPM3HNFDADFG TMPM3HNFDADFG Toshiba Semiconductor and Storage TMPM3HMFDAFG_datasheet_en_20250221.pdf Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 93
auf Bestellung 66 Stücke:
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2+11.35 EUR
10+9.42 EUR
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TMPM3HLFDAUG TMPM3HLFDAUG Toshiba Semiconductor and Storage TMPM3HMFDAFG_datasheet_en_20250221.pdf Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 57
auf Bestellung 1600 Stücke:
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2+13.39 EUR
10+11.1 EUR
25+10.33 EUR
160+9.09 EUR
320+8.73 EUR
640+8.44 EUR
1120+8.23 EUR
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TMPM3HPF10BFG TMPM3HPF10BFG Toshiba Semiconductor and Storage TMPM3HMFDAFG_datasheet_en_20250221.pdf Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 19x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 128-LQFP (14x14)
Number of I/O: 118
auf Bestellung 180 Stücke:
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2+13.72 EUR
10+11.36 EUR
25+10.58 EUR
180+9.25 EUR
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TMPM3HMFDAFG TMPM3HMFDAFG Toshiba Semiconductor and Storage TMPM3HMFDAFG_datasheet_en_20250221.pdf Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 73
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.71 EUR
10+13.02 EUR
25+12.11 EUR
119+10.89 EUR
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TMPM3HNFDAFG TMPM3HNFDAFG Toshiba Semiconductor and Storage TMPM3HMFDAFG_datasheet_en_20250221.pdf Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 93
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.98 EUR
10+13.24 EUR
90+11.28 EUR
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TMPM3HQFDAFG Toshiba Semiconductor and Storage TMPM3HMFDAFG_datasheet_en_20250221.pdf Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 135
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.12 EUR
10+15.85 EUR
60+13.9 EUR
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TMPM3HNF10BFG TMPM3HNF10BFG Toshiba Semiconductor and Storage TMPM3HMFDAFG_datasheet_en_20250221.pdf Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 92
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.68 EUR
10+17.96 EUR
90+15.39 EUR
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TMPM3HQF10BFG TMPM3HQF10BFG Toshiba Semiconductor and Storage TMPM3HMFDAFG_datasheet_en_20250221.pdf Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 134
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.44 EUR
10+21.09 EUR
60+18.56 EUR
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TDTA114E,LM TDTA114E,LM Toshiba Semiconductor and Storage docget.jsp?did=36696&prodName=TDTA114E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TDTA114E,LM TDTA114E,LM Toshiba Semiconductor and Storage docget.jsp?did=36696&prodName=TDTA114E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 2399 Stücke:
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63+0.33 EUR
107+0.2 EUR
172+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
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TC7WU04FU,LF TC7WU04FU,LF Toshiba Semiconductor and Storage TC7WU04FK_datasheet_en_20141118.pdf?did=20208&prodName=TC7WU04FK Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
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TC7WU04FU,LF TC7WU04FU,LF Toshiba Semiconductor and Storage TC7WU04FK_datasheet_en_20141118.pdf?did=20208&prodName=TC7WU04FK Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 8040 Stücke:
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34+0.62 EUR
37+0.57 EUR
100+0.43 EUR
250+0.38 EUR
500+0.32 EUR
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TDTA123J,LM TDTA123J,LM Toshiba Semiconductor and Storage TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Produkt ist nicht verfügbar
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TDTA123J,LM TDTA123J,LM Toshiba Semiconductor and Storage TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
117+0.18 EUR
188+0.11 EUR
500+0.081 EUR
1000+0.071 EUR
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TRS4V65H,LQ TRS4V65H,LQ Toshiba Semiconductor and Storage TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2500 Stücke:
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2500+1.51 EUR
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TRS4V65H,LQ TRS4V65H,LQ Toshiba Semiconductor and Storage TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 4728 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.02 EUR
10+3.24 EUR
100+2.23 EUR
500+1.78 EUR
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TRS6V65H,LQ TRS6V65H,LQ Toshiba Semiconductor and Storage TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 2500 Stücke:
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2500+1.9 EUR
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TRS6V65H,LQ TRS6V65H,LQ Toshiba Semiconductor and Storage TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 4803 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.93 EUR
10+3.86 EUR
100+2.67 EUR
500+2.17 EUR
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TRS8V65H,LQ TRS8V65H,LQ Toshiba Semiconductor and Storage TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TRS8V65H,LQ TRS8V65H,LQ Toshiba Semiconductor and Storage TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.37 EUR
10+4.24 EUR
100+3.17 EUR
500+2.58 EUR
1000+2.39 EUR
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TRS2E65H,S1Q Toshiba Semiconductor and Storage TRS2E65H_datasheet_en_20230411.pdf?did=152099&prodName=TRS2E65H Description: G3 SIC-SBD 650V 2A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.05 EUR
10+2.59 EUR
100+1.76 EUR
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TRS10V65H,LQ TRS10V65H,LQ Toshiba Semiconductor and Storage TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H Description: DIODE SIL CARB 650V 10A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.27 EUR
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TRS10V65H,LQ TRS10V65H,LQ Toshiba Semiconductor and Storage TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H Description: DIODE SIL CARB 650V 10A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3288 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.16 EUR
10+4.69 EUR
50+3.62 EUR
100+3.27 EUR
500+2.68 EUR
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TRS3E65H,S1Q Toshiba Semiconductor and Storage Description: G3 SIC-SBD 650V 3A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 199pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.47 EUR
10+3.13 EUR
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TRS12V65H,LQ TRS12V65H,LQ Toshiba Semiconductor and Storage TRS12V65H_datasheet_en_20230410.pdf?did=152095&prodName=TRS12V65H Description: DIODE SIL CARB 650V 12A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 2500 Stücke:
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TRS12V65H,LQ TRS12V65H,LQ Toshiba Semiconductor and Storage TRS12V65H_datasheet_en_20230410.pdf?did=152095&prodName=TRS12V65H Description: DIODE SIL CARB 650V 12A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 3787 Stücke:
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10+5.26 EUR
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500+3.08 EUR
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TRS4E65H,S1Q Toshiba Semiconductor and Storage Description: G3 SIC-SBD 650V 4A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.97 EUR
10+3.58 EUR
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TRS6E65H,S1Q Toshiba Semiconductor and Storage Description: G3 SIC-SBD 650V 6A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.01 EUR
10+4.5 EUR
100+3.62 EUR
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TRS8E65H,S1Q TRS8E65H,S1Q Toshiba Semiconductor and Storage TRS8E65H_datasheet_en_20230411.pdf?did=152121&prodName=TRS8E65H Description: DIODE SIL CARBIDE 650V 8A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.91 EUR
50+3.28 EUR
100+3.15 EUR
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TRS10E65H,S1Q Toshiba Semiconductor and Storage TRS10E65H_datasheet_en_20230411.pdf?did=152083&prodName=TRS10E65H Description: G3 SIC-SBD 650V 10A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 287 Stücke:
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4+5.4 EUR
50+4.28 EUR
100+3.68 EUR
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TRS12E65H,S1Q Toshiba Semiconductor and Storage TRS12E65H_datasheet_en_20230411.pdf?did=152091&prodName=TRS12E65H Description: G3 SIC-SBD 650V 12A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 378 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.2 EUR
50+4.9 EUR
100+4.2 EUR
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RN1106MFV,L3XHF(CT RN1106MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1106MFV Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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RN1106MFV,L3XHF(CT RN1106MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1106MFV Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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RN1106,LXHF(CT RN1106,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1106 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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RN1106,LXHF(CT RN1106,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1106 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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TC7USB42MU,LF(S2E TC7USB42MU,LF(S2E Toshiba Semiconductor and Storage docget.jsp?did=13905&prodName=TC7USB42MU Description: IC USB SWITCH SPDT DUAL 10UQFN
Features: USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
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TC7USB42MU,LF(S2E TC7USB42MU,LF(S2E Toshiba Semiconductor and Storage docget.jsp?did=13905&prodName=TC7USB42MU Description: IC USB SWITCH SPDT DUAL 10UQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
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1SV228TPH3F 1SV228TPH3F Toshiba Semiconductor and Storage 1SV228_datasheet_en_20161219.pdf?did=2756&prodName=1SV228 Description: DIODE VARACTOR 15V DUAL S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 13.7pF @ 8V, 1MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: S-Mini
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.6
Produkt ist nicht verfügbar
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1SV228TPH3F 1SV228TPH3F Toshiba Semiconductor and Storage 1SV228_datasheet_en_20161219.pdf?did=2756&prodName=1SV228 Description: DIODE VARACTOR 15V DUAL S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 13.7pF @ 8V, 1MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: S-Mini
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.6
Produkt ist nicht verfügbar
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TDTC143E,LM TDTC143E,LM Toshiba Semiconductor and Storage docget.jsp?did=36371&prodName=TDTC143E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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TDTC143E,LM TDTC143E,LM Toshiba Semiconductor and Storage docget.jsp?did=36371&prodName=TDTC143E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 2575 Stücke:
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63+0.33 EUR
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166+0.13 EUR
500+0.092 EUR
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SSM3J118TU,LF SSM3J118TU,LF Toshiba Semiconductor and Storage docget.jsp?did=7050&prodName=SSM3J118TU Description: PB-F SMALL LOW ON RESISTANCE PCH
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Produkt ist nicht verfügbar
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SSM3J118TU,LF SSM3J118TU,LF Toshiba Semiconductor and Storage docget.jsp?did=7050&prodName=SSM3J118TU Description: PB-F SMALL LOW ON RESISTANCE PCH
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
auf Bestellung 660 Stücke:
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SSM3J112TU,LF SSM3J112TU,LF Toshiba Semiconductor and Storage docget.jsp?did=6112&prodName=SSM3J112TU Description: MOSFET P-CH 30V 1.1A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
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SSM3J112TU,LF SSM3J112TU,LF Toshiba Semiconductor and Storage docget.jsp?did=6112&prodName=SSM3J112TU Description: MOSFET P-CH 30V 1.1A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
auf Bestellung 8773 Stücke:
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TLP5754(TP4,E TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754
TLP5754(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1500 Stücke:
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TLP5754(TP4,E TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754
TLP5754(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2377 Stücke:
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TC7SPB9306TU,LF(CT TC7SPB9306TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9306TU
TC7SPB9306TU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
Produkt ist nicht verfügbar
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TC7SPB9306TU,LF(CT TC7SPB9306TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9306TU
TC7SPB9306TU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
auf Bestellung 1668 Stücke:
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TC7MPB9307FK(EL) TC7MPB9307FK_datasheet_en_20220824.pdf?did=61841&prodName=TC7MPB9307FK
TC7MPB9307FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
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TC7MPB9307FK(EL) TC7MPB9307FK_datasheet_en_20220824.pdf?did=61841&prodName=TC7MPB9307FK
TC7MPB9307FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-VSSOP
auf Bestellung 5586 Stücke:
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TC7MPB9327FT(EL) TC7MPB9327FT_datasheet_en_20170223.pdf
TC7MPB9327FT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:2
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
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AnzahlPrivatkunde
2000+0.44 EUR
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TC7MPB9327FT(EL) TC7MPB9327FT_datasheet_en_20170223.pdf
TC7MPB9327FT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:2
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
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17+1.24 EUR
20+1.06 EUR
25+0.99 EUR
100+0.8 EUR
250+0.74 EUR
500+0.62 EUR
1000+0.48 EUR
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TBAT54A,LM docget.jsp?did=37137&prodName=TBAT54A
TBAT54A,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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TBAT54A,LM docget.jsp?did=37137&prodName=TBAT54A
TBAT54A,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 1810 Stücke:
Lieferzeit 10-14 Tag (e)
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56+0.38 EUR
94+0.23 EUR
132+0.15 EUR
152+0.14 EUR
500+0.1 EUR
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TB6613FTG,8,EL docget.jsp?did=11241&prodName=TB6613FTG
Hersteller: Toshiba Semiconductor and Storage
Description: 8 H-BRIDGE DRIVER, CAN BE CONFIG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN4989(TE85L,F) docget.jsp?did=18989&prodName=RN4989
RN4989(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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RN4989(TE85L,F) docget.jsp?did=18989&prodName=RN4989
RN4989(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
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30+0.71 EUR
40+0.54 EUR
100+0.3 EUR
500+0.2 EUR
1000+0.15 EUR
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TLP151A(TPL,E TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A
TLP151A(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
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3000+1.33 EUR
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TLP151A(TPL,E TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A
TLP151A(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 7106 Stücke:
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7+3.28 EUR
10+2.34 EUR
100+1.77 EUR
500+1.52 EUR
1000+1.44 EUR
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TMPM3HNFDADFG TMPM3HMFDAFG_datasheet_en_20250221.pdf
TMPM3HNFDADFG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 93
auf Bestellung 66 Stücke:
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2+11.35 EUR
10+9.42 EUR
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TMPM3HLFDAUG TMPM3HMFDAFG_datasheet_en_20250221.pdf
TMPM3HLFDAUG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 57
auf Bestellung 1600 Stücke:
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2+13.39 EUR
10+11.1 EUR
25+10.33 EUR
160+9.09 EUR
320+8.73 EUR
640+8.44 EUR
1120+8.23 EUR
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TMPM3HPF10BFG TMPM3HMFDAFG_datasheet_en_20250221.pdf
TMPM3HPF10BFG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 19x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 128-LQFP (14x14)
Number of I/O: 118
auf Bestellung 180 Stücke:
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AnzahlPrivatkunde
2+13.72 EUR
10+11.36 EUR
25+10.58 EUR
180+9.25 EUR
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TMPM3HMFDAFG TMPM3HMFDAFG_datasheet_en_20250221.pdf
TMPM3HMFDAFG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 73
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
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2+15.71 EUR
10+13.02 EUR
25+12.11 EUR
119+10.89 EUR
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TMPM3HNFDAFG TMPM3HMFDAFG_datasheet_en_20250221.pdf
TMPM3HNFDAFG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 93
auf Bestellung 90 Stücke:
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2+15.98 EUR
10+13.24 EUR
90+11.28 EUR
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TMPM3HQFDAFG TMPM3HMFDAFG_datasheet_en_20250221.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 135
auf Bestellung 60 Stücke:
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2+19.12 EUR
10+15.85 EUR
60+13.9 EUR
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TMPM3HNF10BFG TMPM3HMFDAFG_datasheet_en_20250221.pdf
TMPM3HNF10BFG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 92
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.68 EUR
10+17.96 EUR
90+15.39 EUR
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TMPM3HQF10BFG TMPM3HMFDAFG_datasheet_en_20250221.pdf
TMPM3HQF10BFG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 134
auf Bestellung 95 Stücke:
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AnzahlPrivatkunde
1+25.44 EUR
10+21.09 EUR
60+18.56 EUR
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TDTA114E,LM docget.jsp?did=36696&prodName=TDTA114E
TDTA114E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TDTA114E,LM docget.jsp?did=36696&prodName=TDTA114E
TDTA114E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 2399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
107+0.2 EUR
172+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
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TC7WU04FU,LF TC7WU04FK_datasheet_en_20141118.pdf?did=20208&prodName=TC7WU04FK
TC7WU04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
6000+0.2 EUR
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TC7WU04FU,LF TC7WU04FK_datasheet_en_20141118.pdf?did=20208&prodName=TC7WU04FK
TC7WU04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 8040 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
34+0.62 EUR
37+0.57 EUR
100+0.43 EUR
250+0.38 EUR
500+0.32 EUR
1000+0.24 EUR
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TDTA123J,LM TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J
TDTA123J,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Produkt ist nicht verfügbar
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TDTA123J,LM TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J
TDTA123J,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
117+0.18 EUR
188+0.11 EUR
500+0.081 EUR
1000+0.071 EUR
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TRS4V65H,LQ TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H
TRS4V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.51 EUR
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TRS4V65H,LQ TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H
TRS4V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 4728 Stücke:
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AnzahlPrivatkunde
5+5.02 EUR
10+3.24 EUR
100+2.23 EUR
500+1.78 EUR
1000+1.64 EUR
Mindestbestellmenge: 5 Stücke
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TRS6V65H,LQ TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H
TRS6V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+1.9 EUR
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TRS6V65H,LQ TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H
TRS6V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 4803 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.93 EUR
10+3.86 EUR
100+2.67 EUR
500+2.17 EUR
1000+2 EUR
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TRS8V65H,LQ TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H
TRS8V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TRS8V65H,LQ TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H
TRS8V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.37 EUR
10+4.24 EUR
100+3.17 EUR
500+2.58 EUR
1000+2.39 EUR
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TRS2E65H,S1Q TRS2E65H_datasheet_en_20230411.pdf?did=152099&prodName=TRS2E65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 2A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 333 Stücke:
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6+4.05 EUR
10+2.59 EUR
100+1.76 EUR
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TRS10V65H,LQ TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H
TRS10V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 10A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.27 EUR
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TRS10V65H,LQ TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H
TRS10V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 10A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3288 Stücke:
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AnzahlPrivatkunde
3+7.16 EUR
10+4.69 EUR
50+3.62 EUR
100+3.27 EUR
500+2.68 EUR
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TRS3E65H,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 3A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 199pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 400 Stücke:
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7+3.47 EUR
10+3.13 EUR
100+2.51 EUR
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TRS12V65H,LQ TRS12V65H_datasheet_en_20230410.pdf?did=152095&prodName=TRS12V65H
TRS12V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 12A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.58 EUR
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TRS12V65H,LQ TRS12V65H_datasheet_en_20230410.pdf?did=152095&prodName=TRS12V65H
TRS12V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 12A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 3787 Stücke:
Lieferzeit 10-14 Tag (e)
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3+8 EUR
10+5.26 EUR
100+3.7 EUR
500+3.08 EUR
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TRS4E65H,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
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6+3.97 EUR
10+3.58 EUR
100+2.88 EUR
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TRS6E65H,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 400 Stücke:
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5+5.01 EUR
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100+3.62 EUR
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TRS8E65H,S1Q TRS8E65H_datasheet_en_20230411.pdf?did=152121&prodName=TRS8E65H
TRS8E65H,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.91 EUR
50+3.28 EUR
100+3.15 EUR
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TRS10E65H,S1Q TRS10E65H_datasheet_en_20230411.pdf?did=152083&prodName=TRS10E65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 10A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 287 Stücke:
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4+5.4 EUR
50+4.28 EUR
100+3.68 EUR
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TRS12E65H,S1Q TRS12E65H_datasheet_en_20230411.pdf?did=152091&prodName=TRS12E65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 12A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 378 Stücke:
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AnzahlPrivatkunde
4+6.2 EUR
50+4.9 EUR
100+4.2 EUR
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RN1106MFV,L3XHF(CT docget.jsp?did=5879&prodName=RN1106MFV
RN1106MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
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AnzahlPrivatkunde
8000+0.11 EUR
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RN1106MFV,L3XHF(CT docget.jsp?did=5879&prodName=RN1106MFV
RN1106MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
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30+0.71 EUR
36+0.58 EUR
100+0.31 EUR
500+0.2 EUR
1000+0.14 EUR
2000+0.13 EUR
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RN1106,LXHF(CT docget.jsp?did=18746&prodName=RN1106
RN1106,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
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RN1106,LXHF(CT docget.jsp?did=18746&prodName=RN1106
RN1106,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5880 Stücke:
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AnzahlPrivatkunde
34+0.63 EUR
48+0.44 EUR
100+0.23 EUR
500+0.18 EUR
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TC7USB42MU,LF(S2E docget.jsp?did=13905&prodName=TC7USB42MU
TC7USB42MU,LF(S2E
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 10UQFN
Features: USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
3000+0.43 EUR
6000+0.39 EUR
9000+0.37 EUR
15000+0.36 EUR
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TC7USB42MU,LF(S2E docget.jsp?did=13905&prodName=TC7USB42MU
TC7USB42MU,LF(S2E
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 10UQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 18951 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.9 EUR
19+1.15 EUR
25+0.95 EUR
100+0.74 EUR
250+0.62 EUR
500+0.56 EUR
1000+0.5 EUR
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1SV228TPH3F 1SV228_datasheet_en_20161219.pdf?did=2756&prodName=1SV228
1SV228TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 15V DUAL S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 13.7pF @ 8V, 1MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: S-Mini
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.6
Produkt ist nicht verfügbar
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1SV228TPH3F 1SV228_datasheet_en_20161219.pdf?did=2756&prodName=1SV228
1SV228TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 15V DUAL S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 13.7pF @ 8V, 1MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: S-Mini
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.6
Produkt ist nicht verfügbar
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TDTC143E,LM docget.jsp?did=36371&prodName=TDTC143E
TDTC143E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TDTC143E,LM docget.jsp?did=36371&prodName=TDTC143E
TDTC143E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 2575 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
103+0.2 EUR
166+0.13 EUR
500+0.092 EUR
1000+0.081 EUR
Mindestbestellmenge: 63 Stücke
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SSM3J118TU,LF docget.jsp?did=7050&prodName=SSM3J118TU
SSM3J118TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F SMALL LOW ON RESISTANCE PCH
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM3J118TU,LF docget.jsp?did=7050&prodName=SSM3J118TU
SSM3J118TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F SMALL LOW ON RESISTANCE PCH
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
37+0.57 EUR
51+0.42 EUR
100+0.36 EUR
500+0.27 EUR
Mindestbestellmenge: 23 Stücke
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SSM3J112TU,LF docget.jsp?did=6112&prodName=SSM3J112TU
SSM3J112TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.1A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J112TU,LF docget.jsp?did=6112&prodName=SSM3J112TU
SSM3J112TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.1A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
auf Bestellung 8773 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
39+0.55 EUR
54+0.39 EUR
100+0.35 EUR
500+0.26 EUR
Mindestbestellmenge: 24 Stücke
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