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TLP5705H(TP4,E TLP5705H(TP4,E Toshiba Semiconductor and Storage TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
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TPH3R70APL1,LQ TPH3R70APL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69027&prodName=TPH3R70APL1 Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
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TPH3R70APL1,LQ TPH3R70APL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69027&prodName=TPH3R70APL1 Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
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CUHS20F40,H3F CUHS20F40,H3F Toshiba Semiconductor and Storage CUHS20F40_datasheet_en_20190831.pdf?did=63600&prodName=CUHS20F40 Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
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CUHS20F40,H3F CUHS20F40,H3F Toshiba Semiconductor and Storage CUHS20F40_datasheet_en_20190831.pdf?did=63600&prodName=CUHS20F40 Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
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TC7SU04FU,LF TC7SU04FU,LF Toshiba Semiconductor and Storage TC7SU04FU_datasheet_en_20170802.pdf?did=20190&prodName=TC7SU04FU Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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TC7SU04FU,LF TC7SU04FU,LF Toshiba Semiconductor and Storage TC7SU04FU_datasheet_en_20170802.pdf?did=20190&prodName=TC7SU04FU Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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RN1411,LXHF RN1411,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18792&prodName=RN1410 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
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RN1411,LXHF RN1411,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18792&prodName=RN1410 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
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RN2411,LXHF RN2411,LXHF Toshiba Semiconductor and Storage RN2411_datasheet_en_20210830.pdf?did=18878&prodName=RN2411 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
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RN2411,LXHF RN2411,LXHF Toshiba Semiconductor and Storage RN2411_datasheet_en_20210830.pdf?did=18878&prodName=RN2411 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
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RN2415,LXHF RN2415,LXHF Toshiba Semiconductor and Storage RN2415_datasheet_en_20210830.pdf?did=18883&prodName=RN2415 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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RN2415,LXHF RN2415,LXHF Toshiba Semiconductor and Storage RN2415_datasheet_en_20210830.pdf?did=18883&prodName=RN2415 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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RN2405,LXHF RN2405,LXHF Toshiba Semiconductor and Storage RN2405_datasheet_en_20210830.pdf?did=18874&prodName=RN2405 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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RN2405,LXHF RN2405,LXHF Toshiba Semiconductor and Storage RN2405_datasheet_en_20210830.pdf?did=18874&prodName=RN2405 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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RN2409,LXHF RN2409,LXHF Toshiba Semiconductor and Storage RN2409_datasheet_en_20210830.pdf?did=18876&prodName=RN2409 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
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RN2409,LXHF RN2409,LXHF Toshiba Semiconductor and Storage RN2409_datasheet_en_20210830.pdf?did=18876&prodName=RN2409 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
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RN1417,LXHF RN1417,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
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RN1417,LXHF RN1417,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
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RN1412,LXHF RN1412,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
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RN1412,LXHF RN1412,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
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RN2404,LXHF RN2404,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.11 EUR
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RN2404,LXHF RN2404,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
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RN1410,LXHF RN1410,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.11 EUR
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RN1410,LXHF RN1410,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
34+0.63 EUR
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RN1413,LXHF RN1413,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
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RN1413,LXHF RN1413,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
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TK60S10N1L,LXHQ TK60S10N1L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=58173&prodName=TK60S10N1L Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
2000+1.19 EUR
4000+1.14 EUR
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TK60S10N1L,LXHQ TK60S10N1L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=58173&prodName=TK60S10N1L Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7619 Stücke:
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10+2.53 EUR
100+1.77 EUR
500+1.44 EUR
1000+1.39 EUR
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MN07ACA14T Toshiba Semiconductor and Storage cHDD-MN-He-Product-Overview.pdf Description: MN07 NAS B2B 14TB
Packaging: Bulk
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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MG07ACP14TE Toshiba Semiconductor and Storage eHDD-MG07ACA-Product-Manual_r2.pdf Description: MG07 14TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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TB67S580FNG,EL TB67S580FNG,EL Toshiba Semiconductor and Storage TB67S580FNG_datasheet_en_20230207.pdf?did=151507&prodName=TB67S580FNG Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TB67S580FNG,EL TB67S580FNG,EL Toshiba Semiconductor and Storage TB67S580FNG_datasheet_en_20230207.pdf?did=151507&prodName=TB67S580FNG Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 3708 Stücke:
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8+2.93 EUR
10+2.14 EUR
25+1.95 EUR
100+1.74 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
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TB67S581FNG,EL TB67S581FNG,EL Toshiba Semiconductor and Storage TB67S581FNG_datasheet_en_20230207.pdf?did=151461&prodName=TB67S581FNG Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
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4000+1.44 EUR
Mindestbestellmenge: 4000 Stücke
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TB67S581FNG,EL TB67S581FNG,EL Toshiba Semiconductor and Storage TB67S581FNG_datasheet_en_20230207.pdf?did=151461&prodName=TB67S581FNG Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4386 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.93 EUR
10+2.14 EUR
25+1.95 EUR
100+1.74 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
Mindestbestellmenge: 8 Stücke
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TLP266J(TPL,E TLP266J(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=13731&prodName=TLP266J Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.65 EUR
Mindestbestellmenge: 3000 Stücke
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TLP266J(TPL,E TLP266J(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=13731&prodName=TLP266J Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Cut Tape (CT)
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 200V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SOP
Turn On Time: 30µs
Current - Hold (Ih): 600µA (Typ)
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.27V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
auf Bestellung 5703 Stücke:
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12+1.76 EUR
18+1.23 EUR
100+0.9 EUR
500+0.76 EUR
1000+0.71 EUR
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TLP5832(D4-TP,E TLP5832(D4-TP,E Toshiba Semiconductor and Storage TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832 Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 1/0
auf Bestellung 1500 Stücke:
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1500+1.96 EUR
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TLP5832(D4-TP,E TLP5832(D4-TP,E Toshiba Semiconductor and Storage TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832 Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
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4+5.59 EUR
10+3.69 EUR
100+2.73 EUR
500+2.34 EUR
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TLP5832(TP,E TLP5832(TP,E Toshiba Semiconductor and Storage TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832 Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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TLP5832(TP,E TLP5832(TP,E Toshiba Semiconductor and Storage TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832 Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.59 EUR
10+3.69 EUR
100+2.73 EUR
500+2.34 EUR
Mindestbestellmenge: 4 Stücke
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TLP5832(D4,E TLP5832(D4,E Toshiba Semiconductor and Storage TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832 Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.59 EUR
75+2.81 EUR
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TLP5832(E TLP5832(E Toshiba Semiconductor and Storage TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832 Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 75 Stücke:
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4+5.59 EUR
75+2.81 EUR
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TLP4176A(F TLP4176A(F Toshiba Semiconductor and Storage TLP4176A_datasheet_en_20211215.pdf?did=65816&prodName=TLP4176A Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.18 EUR
10+3.39 EUR
100+2.49 EUR
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TLP4176A(TP,F TLP4176A(TP,F Toshiba Semiconductor and Storage docget.jsp?did=65816&prodName=TLP4176A Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
auf Bestellung 2500 Stücke:
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2500+2.2 EUR
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TLP4176A(TP,F TLP4176A(TP,F Toshiba Semiconductor and Storage docget.jsp?did=65816&prodName=TLP4176A Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
auf Bestellung 4358 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.02 EUR
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100+2.81 EUR
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2SK2989(TPE6,F,M) 2SK2989(TPE6,F,M) Toshiba Semiconductor and Storage 2SK2989.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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2SK2989,F(J 2SK2989,F(J Toshiba Semiconductor and Storage 2SK2989.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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2SK2989,T6F(J 2SK2989,T6F(J Toshiba Semiconductor and Storage 2SK2989.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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TC7WH32FK,LJ(CT TC7WH32FK,LJ(CT Toshiba Semiconductor and Storage TC7WH32FK_datasheet_en_20170517.pdf?did=54762&prodName=TC7WH32FK Description: IC GATE OR 2CH 2-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
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3000+0.14 EUR
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TC7WH32FK,LJ(CT TC7WH32FK,LJ(CT Toshiba Semiconductor and Storage TC7WH32FK_datasheet_en_20170517.pdf?did=54762&prodName=TC7WH32FK Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 10397 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.36 EUR
87+0.24 EUR
100+0.21 EUR
117+0.18 EUR
250+0.17 EUR
500+0.15 EUR
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2SA1483-Y(TE12L,F) Toshiba Semiconductor and Storage Description: 2SA1483-Y(TE12L,F)
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PW-MINI
Produkt ist nicht verfügbar
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MG06SCA600A Toshiba Semiconductor and Storage eHDD_MG06SCA_Product-Overview.pdf Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG06SCA600E Toshiba Semiconductor and Storage eHDD_MG06SCA_Product-Overview.pdf Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
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MG0GSCA800A Toshiba Semiconductor and Storage Description: MG06 8TB
Packaging: Bulk
Produkt ist nicht verfügbar
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MG06SCA800E Toshiba Semiconductor and Storage eHDD_MG06SCA_Product-Overview.pdf Description: MG06 8TB
Packaging: Bulk
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG06SCA10TE Toshiba Semiconductor and Storage eHDD_MG06SCA_Product-Overview.pdf Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG06SCA10TA Toshiba Semiconductor and Storage eHDD_MG06SCA_Product-Overview.pdf Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Produkt ist nicht verfügbar
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CMG06A,LQ(M Toshiba Semiconductor and Storage docget.jsp?did=68916&prodName=CMG06A Description: DIODE GEN PURP 600V 1A M-FLAT
Packaging: Box
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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TLP4590A(TP5,F TLP4590A(TP5,F Toshiba Semiconductor and Storage TLP4590A_datasheet_en_20230601.pdf?did=70530&prodName=TLP4590A Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Produkt ist nicht verfügbar
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TLP5705H(TP4,E TLP5705H_datasheet_en_20220901.pdf?did=139564&prodName=TLP5705H
TLP5705H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1490 Stücke:
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6+3.96 EUR
10+2.55 EUR
100+1.82 EUR
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TPH3R70APL1,LQ docget.jsp?did=69027&prodName=TPH3R70APL1
TPH3R70APL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
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5000+1.23 EUR
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TPH3R70APL1,LQ docget.jsp?did=69027&prodName=TPH3R70APL1
TPH3R70APL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 8789 Stücke:
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5+4.36 EUR
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2000+1.29 EUR
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CUHS20F40,H3F CUHS20F40_datasheet_en_20190831.pdf?did=63600&prodName=CUHS20F40
CUHS20F40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 15000 Stücke:
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3000+0.17 EUR
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CUHS20F40,H3F CUHS20F40_datasheet_en_20190831.pdf?did=63600&prodName=CUHS20F40
CUHS20F40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 26254 Stücke:
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23+0.94 EUR
36+0.58 EUR
100+0.37 EUR
500+0.29 EUR
1000+0.25 EUR
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TC7SU04FU,LF TC7SU04FU_datasheet_en_20170802.pdf?did=20190&prodName=TC7SU04FU
TC7SU04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 21000 Stücke:
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AnzahlPrivatkunde
3000+0.14 EUR
6000+0.13 EUR
15000+0.11 EUR
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TC7SU04FU,LF TC7SU04FU_datasheet_en_20170802.pdf?did=20190&prodName=TC7SU04FU
TC7SU04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 23313 Stücke:
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28+0.75 EUR
38+0.56 EUR
44+0.49 EUR
100+0.31 EUR
250+0.26 EUR
500+0.21 EUR
1000+0.15 EUR
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RN1411,LXHF docget.jsp?did=18792&prodName=RN1410
RN1411,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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3000+0.13 EUR
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RN1411,LXHF docget.jsp?did=18792&prodName=RN1410
RN1411,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
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34+0.63 EUR
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RN2411,LXHF RN2411_datasheet_en_20210830.pdf?did=18878&prodName=RN2411
RN2411,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
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AnzahlPrivatkunde
3000+0.13 EUR
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RN2411,LXHF RN2411_datasheet_en_20210830.pdf?did=18878&prodName=RN2411
RN2411,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 5940 Stücke:
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35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
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RN2415,LXHF RN2415_datasheet_en_20210830.pdf?did=18883&prodName=RN2415
RN2415,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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RN2415,LXHF RN2415_datasheet_en_20210830.pdf?did=18883&prodName=RN2415
RN2415,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
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35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
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RN2405,LXHF RN2405_datasheet_en_20210830.pdf?did=18874&prodName=RN2405
RN2405,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.11 EUR
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RN2405,LXHF RN2405_datasheet_en_20210830.pdf?did=18874&prodName=RN2405
RN2405,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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RN2409,LXHF RN2409_datasheet_en_20210830.pdf?did=18876&prodName=RN2409
RN2409,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.13 EUR
6000+0.11 EUR
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RN2409,LXHF RN2409_datasheet_en_20210830.pdf?did=18876&prodName=RN2409
RN2409,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
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RN1417,LXHF
RN1417,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
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3000+0.13 EUR
6000+0.11 EUR
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RN1417,LXHF
RN1417,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
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RN1412,LXHF
RN1412,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
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3000+0.13 EUR
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RN1412,LXHF
RN1412,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
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RN2404,LXHF
RN2404,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.13 EUR
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RN2404,LXHF
RN2404,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
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RN1410,LXHF
RN1410,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.13 EUR
6000+0.11 EUR
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RN1410,LXHF
RN1410,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
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RN1413,LXHF
RN1413,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
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RN1413,LXHF
RN1413,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
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TK60S10N1L,LXHQ docget.jsp?did=58173&prodName=TK60S10N1L
TK60S10N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
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2000+1.19 EUR
4000+1.14 EUR
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TK60S10N1L,LXHQ docget.jsp?did=58173&prodName=TK60S10N1L
TK60S10N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7619 Stücke:
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1000+1.39 EUR
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MN07ACA14T cHDD-MN-He-Product-Overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MN07 NAS B2B 14TB
Packaging: Bulk
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG07ACP14TE eHDD-MG07ACA-Product-Manual_r2.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MG07 14TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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TB67S580FNG,EL TB67S580FNG_datasheet_en_20230207.pdf?did=151507&prodName=TB67S580FNG
TB67S580FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
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TB67S580FNG,EL TB67S580FNG_datasheet_en_20230207.pdf?did=151507&prodName=TB67S580FNG
TB67S580FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 3708 Stücke:
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8+2.93 EUR
10+2.14 EUR
25+1.95 EUR
100+1.74 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
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TB67S581FNG,EL TB67S581FNG_datasheet_en_20230207.pdf?did=151461&prodName=TB67S581FNG
TB67S581FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.44 EUR
Mindestbestellmenge: 4000 Stücke
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TB67S581FNG,EL TB67S581FNG_datasheet_en_20230207.pdf?did=151461&prodName=TB67S581FNG
TB67S581FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4386 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.93 EUR
10+2.14 EUR
25+1.95 EUR
100+1.74 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
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TLP266J(TPL,E docget.jsp?did=13731&prodName=TLP266J
TLP266J(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.65 EUR
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TLP266J(TPL,E docget.jsp?did=13731&prodName=TLP266J
TLP266J(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Cut Tape (CT)
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 200V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SOP
Turn On Time: 30µs
Current - Hold (Ih): 600µA (Typ)
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.27V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
auf Bestellung 5703 Stücke:
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12+1.76 EUR
18+1.23 EUR
100+0.9 EUR
500+0.76 EUR
1000+0.71 EUR
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TLP5832(D4-TP,E TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832
TLP5832(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 1/0
auf Bestellung 1500 Stücke:
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1500+1.96 EUR
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TLP5832(D4-TP,E TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832
TLP5832(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
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4+5.59 EUR
10+3.69 EUR
100+2.73 EUR
500+2.34 EUR
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TLP5832(TP,E TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832
TLP5832(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5832(TP,E TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832
TLP5832(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.59 EUR
10+3.69 EUR
100+2.73 EUR
500+2.34 EUR
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TLP5832(D4,E TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832
TLP5832(D4,E
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.59 EUR
75+2.81 EUR
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TLP5832(E TLP5832_datasheet_en_20190226.pdf?did=58387&prodName=TLP5832
TLP5832(E
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
auf Bestellung 75 Stücke:
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AnzahlPrivatkunde
4+5.59 EUR
75+2.81 EUR
Mindestbestellmenge: 4 Stücke
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TLP4176A(F TLP4176A_datasheet_en_20211215.pdf?did=65816&prodName=TLP4176A
TLP4176A(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
auf Bestellung 102 Stücke:
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5+5.18 EUR
10+3.39 EUR
100+2.49 EUR
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TLP4176A(TP,F docget.jsp?did=65816&prodName=TLP4176A
TLP4176A(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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2500+2.2 EUR
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TLP4176A(TP,F docget.jsp?did=65816&prodName=TLP4176A
TLP4176A(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
auf Bestellung 4358 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.02 EUR
10+3.64 EUR
100+2.81 EUR
500+2.45 EUR
1000+2.33 EUR
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2SK2989(TPE6,F,M) 2SK2989.pdf
2SK2989(TPE6,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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2SK2989,F(J 2SK2989.pdf
2SK2989,F(J
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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2SK2989,T6F(J 2SK2989.pdf
2SK2989,T6F(J
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
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TC7WH32FK,LJ(CT TC7WH32FK_datasheet_en_20170517.pdf?did=54762&prodName=TC7WH32FK
TC7WH32FK,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 9000 Stücke:
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3000+0.14 EUR
6000+0.13 EUR
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TC7WH32FK,LJ(CT TC7WH32FK_datasheet_en_20170517.pdf?did=54762&prodName=TC7WH32FK
TC7WH32FK,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 10397 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
87+0.24 EUR
100+0.21 EUR
117+0.18 EUR
250+0.17 EUR
500+0.15 EUR
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2SA1483-Y(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: 2SA1483-Y(TE12L,F)
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PW-MINI
Produkt ist nicht verfügbar
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MG06SCA600A eHDD_MG06SCA_Product-Overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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MG06SCA600E eHDD_MG06SCA_Product-Overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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MG0GSCA800A
Hersteller: Toshiba Semiconductor and Storage
Description: MG06 8TB
Packaging: Bulk
Produkt ist nicht verfügbar
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MG06SCA800E eHDD_MG06SCA_Product-Overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MG06 8TB
Packaging: Bulk
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG06SCA10TE eHDD_MG06SCA_Product-Overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG06SCA10TA eHDD_MG06SCA_Product-Overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Produkt ist nicht verfügbar
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CMG06A,LQ(M docget.jsp?did=68916&prodName=CMG06A
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 1A M-FLAT
Packaging: Box
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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TLP4590A(TP5,F TLP4590A_datasheet_en_20230601.pdf?did=70530&prodName=TLP4590A
TLP4590A(TP5,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Produkt ist nicht verfügbar
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