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TPC8129,LQ(S TPC8129,LQ(S Toshiba Semiconductor and Storage docget.jsp?did=5957&prodName=TPC8129 Description: MOSFET P-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.29 EUR
Mindestbestellmenge: 2500
TPC8129,LQ(S TPC8129,LQ(S Toshiba Semiconductor and Storage docget.jsp?did=5957&prodName=TPC8129 Description: MOSFET P-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 4976 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
25+ 0.73 EUR
100+ 0.51 EUR
500+ 0.4 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 21
TPC8134,LQ(S TPC8134,LQ(S Toshiba Semiconductor and Storage TPC8134_datasheet_en_20140107.pdf?did=6517&prodName=TPC8134 Description: MOSFET P-CH 40V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.42 EUR
5000+ 0.4 EUR
Mindestbestellmenge: 2500
TPC8134,LQ(S TPC8134,LQ(S Toshiba Semiconductor and Storage TPC8134_datasheet_en_20140107.pdf?did=6517&prodName=TPC8134 Description: MOSFET P-CH 40V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
auf Bestellung 7474 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
19+ 0.97 EUR
100+ 0.67 EUR
500+ 0.56 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
SSM6K819R,LF SSM6K819R,LF Toshiba Semiconductor and Storage docget.jsp?did=65097&prodName=SSM6K819R Description: N-CH MOSFET, 100 V, 10 A, 0.0258
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.45 EUR
Mindestbestellmenge: 3000
SSM6K819R,LF SSM6K819R,LF Toshiba Semiconductor and Storage docget.jsp?did=65097&prodName=SSM6K819R Description: N-CH MOSFET, 100 V, 10 A, 0.0258
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
18+ 1.03 EUR
100+ 0.79 EUR
500+ 0.62 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 16
TCR15AG11,LF TCR15AG11,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.1V 1.5A 6WCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
Produkt ist nicht verfügbar
TCR15AG11,LF TCR15AG11,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.1V 1.5A 6WCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
auf Bestellung 4945 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
20+ 0.89 EUR
25+ 0.84 EUR
100+ 0.69 EUR
250+ 0.64 EUR
500+ 0.54 EUR
1000+ 0.43 EUR
2500+ 0.39 EUR
Mindestbestellmenge: 18
TDTC114Y,LM Toshiba Semiconductor and Storage TDTC114Y_datasheet_en_20201113.pdf?did=36702&prodName=TDTC114Y Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 79 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Produkt ist nicht verfügbar
TDTC114Y,LM Toshiba Semiconductor and Storage TDTC114Y_datasheet_en_20201113.pdf?did=36702&prodName=TDTC114Y Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 79 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
86+ 0.21 EUR
159+ 0.11 EUR
500+ 0.087 EUR
1000+ 0.061 EUR
Mindestbestellmenge: 63
CUHS15F60,H3F Toshiba Semiconductor and Storage docget.jsp?did=70193&prodName=CUHS15F60 Description: DIODE SCHOTTKY 60V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Produkt ist nicht verfügbar
CUHS15F60,H3F Toshiba Semiconductor and Storage docget.jsp?did=70193&prodName=CUHS15F60 Description: DIODE SCHOTTKY 60V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 23
TAR5S33TE85LF TAR5S33TE85LF Toshiba Semiconductor and Storage TAR5S40_datasheet_en_20071101.pdf?did=766&prodName=TAR5S40 Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
Produkt ist nicht verfügbar
TAR5S33TE85LF TAR5S33TE85LF Toshiba Semiconductor and Storage TAR5S40_datasheet_en_20071101.pdf?did=766&prodName=TAR5S40 Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
Produkt ist nicht verfügbar
RN2402,LF RN2402,LF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2401 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
RN2402,LF RN2402,LF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2401 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2756 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
76+ 0.23 EUR
155+ 0.11 EUR
500+ 0.095 EUR
1000+ 0.066 EUR
Mindestbestellmenge: 53
TLP5751(D4-TP4,E TLP5751(D4-TP4,E Toshiba Semiconductor and Storage TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP5751(D4-TP4,E TLP5751(D4-TP4,E Toshiba Semiconductor and Storage TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1495 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.92 EUR
10+ 2.61 EUR
100+ 2.01 EUR
500+ 1.82 EUR
Mindestbestellmenge: 5
TLP5751(TP4,E TLP5751(TP4,E Toshiba Semiconductor and Storage TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP5751(TP4,E TLP5751(TP4,E Toshiba Semiconductor and Storage TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.85 EUR
10+ 2.57 EUR
100+ 1.98 EUR
500+ 1.79 EUR
Mindestbestellmenge: 5
SSM6K405TU,LF SSM6K405TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10279&prodName=SSM6K405TU Description: MOSFET N-CH 20V 2A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
Produkt ist nicht verfügbar
SSM6K405TU,LF SSM6K405TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10279&prodName=SSM6K405TU Description: MOSFET N-CH 20V 2A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
34+ 0.53 EUR
100+ 0.36 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 28
TLP5752(D4-TP4,E TLP5752(D4-TP4,E Toshiba Semiconductor and Storage docget.jsp?did=15367&prodName=TLP5752 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP5752(D4-TP4,E TLP5752(D4-TP4,E Toshiba Semiconductor and Storage docget.jsp?did=15367&prodName=TLP5752 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1176 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.22 EUR
10+ 2.81 EUR
100+ 2.16 EUR
500+ 1.96 EUR
Mindestbestellmenge: 5
TCR3DF335,LM(CT TCR3DF335,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF335 Description: IC REG LINEAR 3.35V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.35V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DF335,LM(CT TCR3DF335,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF335 Description: IC REG LINEAR 3.35V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.35V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TDTA124E,LM Toshiba Semiconductor and Storage TDTA124E_datasheet_en_20201113.pdf?did=36697&prodName=TDTA124E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.05 EUR
Mindestbestellmenge: 3000
TDTA124E,LM Toshiba Semiconductor and Storage TDTA124E_datasheet_en_20201113.pdf?did=36697&prodName=TDTA124E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
86+ 0.21 EUR
159+ 0.11 EUR
500+ 0.087 EUR
1000+ 0.061 EUR
Mindestbestellmenge: 63
TLP151A(V4-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=13891&prodName=TLP151A Description: GATE DRIVE COUPLER; 5-PIN SO6; V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
TLP151A(V4-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=13891&prodName=TLP151A Description: GATE DRIVE COUPLER; 5-PIN SO6; V
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
11+ 1.64 EUR
100+ 1.22 EUR
500+ 1.12 EUR
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TK7E80W,S1X TK7E80W,S1X Toshiba Semiconductor and Storage docget.jsp?did=55442&prodName=TK7E80W Description: MOSFET N-CH 800V 6.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
2SC5712(TE12L,F) 2SC5712(TE12L,F) Toshiba Semiconductor and Storage 2SC5712_datasheet_en_20131101.pdf?did=20740&prodName=2SC5712 Description: TRANS NPN 50V 3A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.27 EUR
Mindestbestellmenge: 1000
2SC5712(TE12L,F) 2SC5712(TE12L,F) Toshiba Semiconductor and Storage 2SC5712_datasheet_en_20131101.pdf?did=20740&prodName=2SC5712 Description: TRANS NPN 50V 3A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 1571 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
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RN1911FE,LXHF(CT RN1911FE,LXHF(CT Toshiba Semiconductor and Storage RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE Description: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
Mindestbestellmenge: 4000
RN1911FE,LXHF(CT RN1911FE,LXHF(CT Toshiba Semiconductor and Storage RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE Description: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7980 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
43+ 0.42 EUR
100+ 0.21 EUR
500+ 0.19 EUR
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Mindestbestellmenge: 30
TDTC144E,LM TDTC144E,LM Toshiba Semiconductor and Storage TDTC144E_datasheet_en_20201113.pdf?did=36376&prodName=TDTC144E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 77 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.049 EUR
Mindestbestellmenge: 3000
TDTC144E,LM TDTC144E,LM Toshiba Semiconductor and Storage TDTC144E_datasheet_en_20201113.pdf?did=36376&prodName=TDTC144E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 77 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
TLP631(GR-TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(BL-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(Y,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(GB-TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(GB-LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(TP5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(BL-LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(LF5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TC74VCX574FTEL TC74VCX574FTEL Toshiba Semiconductor and Storage Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 6 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.2ns @ 3.3V, 30pF
Part Status: Not For New Designs
Number of Bits per Element: 8
Produkt ist nicht verfügbar
TC74VCX574FTEL TC74VCX574FTEL Toshiba Semiconductor and Storage Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 6 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.2ns @ 3.3V, 30pF
Part Status: Not For New Designs
Number of Bits per Element: 8
Produkt ist nicht verfügbar
TPH5200FNH,L1Q TPH5200FNH,L1Q Toshiba Semiconductor and Storage TPH5200FNH_datasheet_en_20191018.pdf?did=14486&prodName=TPH5200FNH Description: MOSFET N-CH 250V 26A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
Produkt ist nicht verfügbar
TPH5200FNH,L1Q TPH5200FNH,L1Q Toshiba Semiconductor and Storage TPH5200FNH_datasheet_en_20191018.pdf?did=14486&prodName=TPH5200FNH Description: MOSFET N-CH 250V 26A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 4844 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.51 EUR
10+ 3.73 EUR
100+ 2.97 EUR
500+ 2.52 EUR
1000+ 2.13 EUR
2000+ 2.03 EUR
Mindestbestellmenge: 4
TPH5R60APL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=60586&prodName=TPH5R60APL Description: PB-F POWER MOSFET TRANSISTOR N-C
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Produkt ist nicht verfügbar
TPH5R60APL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=60586&prodName=TPH5R60APL Description: PB-F POWER MOSFET TRANSISTOR N-C
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 3790 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
11+ 1.72 EUR
100+ 1.33 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
2000+ 0.87 EUR
Mindestbestellmenge: 9
TC7SZ14FU,LJ(CT TC7SZ14FU,LJ(CT Toshiba Semiconductor and Storage TC7SZ14F_datasheet_en_20171221.pdf?did=20046&prodName=TC7SZ14F Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.094 EUR
6000+ 0.082 EUR
15000+ 0.07 EUR
30000+ 0.066 EUR
Mindestbestellmenge: 3000
TC7SZ14FU,LJ(CT TC7SZ14FU,LJ(CT Toshiba Semiconductor and Storage TC7SZ14F_datasheet_en_20171221.pdf?did=20046&prodName=TC7SZ14F Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 56569 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
40+ 0.44 EUR
48+ 0.37 EUR
100+ 0.23 EUR
250+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
TPH4R803PL,LQ TPH4R803PL,LQ Toshiba Semiconductor and Storage TPH4R803PL_datasheet_en_20170522.pdf?did=58408&prodName=TPH4R803PL Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.53 EUR
Mindestbestellmenge: 3000
TPH4R803PL,LQ TPH4R803PL,LQ Toshiba Semiconductor and Storage TPH4R803PL_datasheet_en_20170522.pdf?did=58408&prodName=TPH4R803PL Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
15+ 1.21 EUR
100+ 0.93 EUR
500+ 0.73 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 13
TPH4R008QM,LQ Toshiba Semiconductor and Storage Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Produkt ist nicht verfügbar
TPH4R008QM,LQ Toshiba Semiconductor and Storage Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
auf Bestellung 2358 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
11+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
2000+ 0.85 EUR
Mindestbestellmenge: 9
DF2S6M4CT,L3F DF2S6M4CT,L3F Toshiba Semiconductor and Storage DF2S6M4CT_datasheet_en_20180123.pdf?did=56015&prodName=DF2S6M4CT Description: TVS DIODE 5.5VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.058 EUR
30000+ 0.057 EUR
50000+ 0.051 EUR
Mindestbestellmenge: 10000
TPC8129,LQ(S docget.jsp?did=5957&prodName=TPC8129
TPC8129,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.29 EUR
Mindestbestellmenge: 2500
TPC8129,LQ(S docget.jsp?did=5957&prodName=TPC8129
TPC8129,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 4976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.73 EUR
100+ 0.51 EUR
500+ 0.4 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 21
TPC8134,LQ(S TPC8134_datasheet_en_20140107.pdf?did=6517&prodName=TPC8134
TPC8134,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.42 EUR
5000+ 0.4 EUR
Mindestbestellmenge: 2500
TPC8134,LQ(S TPC8134_datasheet_en_20140107.pdf?did=6517&prodName=TPC8134
TPC8134,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
auf Bestellung 7474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.11 EUR
19+ 0.97 EUR
100+ 0.67 EUR
500+ 0.56 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
SSM6K819R,LF docget.jsp?did=65097&prodName=SSM6K819R
SSM6K819R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 10 A, 0.0258
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.45 EUR
Mindestbestellmenge: 3000
SSM6K819R,LF docget.jsp?did=65097&prodName=SSM6K819R
SSM6K819R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 10 A, 0.0258
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1.03 EUR
100+ 0.79 EUR
500+ 0.62 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 16
TCR15AG11,LF
TCR15AG11,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 1.5A 6WCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
Produkt ist nicht verfügbar
TCR15AG11,LF
TCR15AG11,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 1.5A 6WCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
auf Bestellung 4945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
20+ 0.89 EUR
25+ 0.84 EUR
100+ 0.69 EUR
250+ 0.64 EUR
500+ 0.54 EUR
1000+ 0.43 EUR
2500+ 0.39 EUR
Mindestbestellmenge: 18
TDTC114Y,LM TDTC114Y_datasheet_en_20201113.pdf?did=36702&prodName=TDTC114Y
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 79 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Produkt ist nicht verfügbar
TDTC114Y,LM TDTC114Y_datasheet_en_20201113.pdf?did=36702&prodName=TDTC114Y
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 79 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
86+ 0.21 EUR
159+ 0.11 EUR
500+ 0.087 EUR
1000+ 0.061 EUR
Mindestbestellmenge: 63
CUHS15F60,H3F docget.jsp?did=70193&prodName=CUHS15F60
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Produkt ist nicht verfügbar
CUHS15F60,H3F docget.jsp?did=70193&prodName=CUHS15F60
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 23
TAR5S33TE85LF TAR5S40_datasheet_en_20071101.pdf?did=766&prodName=TAR5S40
TAR5S33TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
Produkt ist nicht verfügbar
TAR5S33TE85LF TAR5S40_datasheet_en_20071101.pdf?did=766&prodName=TAR5S40
TAR5S33TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
Produkt ist nicht verfügbar
RN2402,LF docget.jsp?did=18874&prodName=RN2401
RN2402,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
RN2402,LF docget.jsp?did=18874&prodName=RN2401
RN2402,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
76+ 0.23 EUR
155+ 0.11 EUR
500+ 0.095 EUR
1000+ 0.066 EUR
Mindestbestellmenge: 53
TLP5751(D4-TP4,E TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751
TLP5751(D4-TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP5751(D4-TP4,E TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751
TLP5751(D4-TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.92 EUR
10+ 2.61 EUR
100+ 2.01 EUR
500+ 1.82 EUR
Mindestbestellmenge: 5
TLP5751(TP4,E TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751
TLP5751(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP5751(TP4,E TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751
TLP5751(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.85 EUR
10+ 2.57 EUR
100+ 1.98 EUR
500+ 1.79 EUR
Mindestbestellmenge: 5
SSM6K405TU,LF docget.jsp?did=10279&prodName=SSM6K405TU
SSM6K405TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 2A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
Produkt ist nicht verfügbar
SSM6K405TU,LF docget.jsp?did=10279&prodName=SSM6K405TU
SSM6K405TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 2A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
34+ 0.53 EUR
100+ 0.36 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 28
TLP5752(D4-TP4,E docget.jsp?did=15367&prodName=TLP5752
TLP5752(D4-TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
TLP5752(D4-TP4,E docget.jsp?did=15367&prodName=TLP5752
TLP5752(D4-TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.22 EUR
10+ 2.81 EUR
100+ 2.16 EUR
500+ 1.96 EUR
Mindestbestellmenge: 5
TCR3DF335,LM(CT docget.jsp?did=14709&prodName=TCR3DF335
TCR3DF335,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.35V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.35V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DF335,LM(CT docget.jsp?did=14709&prodName=TCR3DF335
TCR3DF335,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.35V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.35V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TDTA124E,LM TDTA124E_datasheet_en_20201113.pdf?did=36697&prodName=TDTA124E
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.05 EUR
Mindestbestellmenge: 3000
TDTA124E,LM TDTA124E_datasheet_en_20201113.pdf?did=36697&prodName=TDTA124E
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
86+ 0.21 EUR
159+ 0.11 EUR
500+ 0.087 EUR
1000+ 0.061 EUR
Mindestbestellmenge: 63
TLP151A(V4-TPL,E docget.jsp?did=13891&prodName=TLP151A
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 5-PIN SO6; V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
TLP151A(V4-TPL,E docget.jsp?did=13891&prodName=TLP151A
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 5-PIN SO6; V
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.6 EUR
11+ 1.64 EUR
100+ 1.22 EUR
500+ 1.12 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 7
TK7E80W,S1X docget.jsp?did=55442&prodName=TK7E80W
TK7E80W,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 6.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
2SC5712(TE12L,F) 2SC5712_datasheet_en_20131101.pdf?did=20740&prodName=2SC5712
2SC5712(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.27 EUR
Mindestbestellmenge: 1000
2SC5712(TE12L,F) 2SC5712_datasheet_en_20131101.pdf?did=20740&prodName=2SC5712
2SC5712(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 1571 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
30+ 0.61 EUR
100+ 0.42 EUR
500+ 0.33 EUR
Mindestbestellmenge: 25
RN1911FE,LXHF(CT RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE
RN1911FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.13 EUR
Mindestbestellmenge: 4000
RN1911FE,LXHF(CT RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE
RN1911FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
43+ 0.42 EUR
100+ 0.21 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 30
TDTC144E,LM TDTC144E_datasheet_en_20201113.pdf?did=36376&prodName=TDTC144E
TDTC144E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 77 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.049 EUR
Mindestbestellmenge: 3000
TDTC144E,LM TDTC144E_datasheet_en_20201113.pdf?did=36376&prodName=TDTC144E
TDTC144E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 77 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
TLP631(GR-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(BL-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(Y,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(GB-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(GB-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(TP5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(BL-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP631(LF5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TC74VCX574FTEL
TC74VCX574FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 6 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.2ns @ 3.3V, 30pF
Part Status: Not For New Designs
Number of Bits per Element: 8
Produkt ist nicht verfügbar
TC74VCX574FTEL
TC74VCX574FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 6 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.2ns @ 3.3V, 30pF
Part Status: Not For New Designs
Number of Bits per Element: 8
Produkt ist nicht verfügbar
TPH5200FNH,L1Q TPH5200FNH_datasheet_en_20191018.pdf?did=14486&prodName=TPH5200FNH
TPH5200FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 26A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
Produkt ist nicht verfügbar
TPH5200FNH,L1Q TPH5200FNH_datasheet_en_20191018.pdf?did=14486&prodName=TPH5200FNH
TPH5200FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 26A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 4844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.51 EUR
10+ 3.73 EUR
100+ 2.97 EUR
500+ 2.52 EUR
1000+ 2.13 EUR
2000+ 2.03 EUR
Mindestbestellmenge: 4
TPH5R60APL,L1Q docget.jsp?did=60586&prodName=TPH5R60APL
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR N-C
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Produkt ist nicht verfügbar
TPH5R60APL,L1Q docget.jsp?did=60586&prodName=TPH5R60APL
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR N-C
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 3790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.09 EUR
11+ 1.72 EUR
100+ 1.33 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
2000+ 0.87 EUR
Mindestbestellmenge: 9
TC7SZ14FU,LJ(CT TC7SZ14F_datasheet_en_20171221.pdf?did=20046&prodName=TC7SZ14F
TC7SZ14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.094 EUR
6000+ 0.082 EUR
15000+ 0.07 EUR
30000+ 0.066 EUR
Mindestbestellmenge: 3000
TC7SZ14FU,LJ(CT TC7SZ14F_datasheet_en_20171221.pdf?did=20046&prodName=TC7SZ14F
TC7SZ14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 56569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
40+ 0.44 EUR
48+ 0.37 EUR
100+ 0.23 EUR
250+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
TPH4R803PL,LQ TPH4R803PL_datasheet_en_20170522.pdf?did=58408&prodName=TPH4R803PL
TPH4R803PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.53 EUR
Mindestbestellmenge: 3000
TPH4R803PL,LQ TPH4R803PL_datasheet_en_20170522.pdf?did=58408&prodName=TPH4R803PL
TPH4R803PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.21 EUR
100+ 0.93 EUR
500+ 0.73 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 13
TPH4R008QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Produkt ist nicht verfügbar
TPH4R008QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
auf Bestellung 2358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
11+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
2000+ 0.85 EUR
Mindestbestellmenge: 9
DF2S6M4CT,L3F DF2S6M4CT_datasheet_en_20180123.pdf?did=56015&prodName=DF2S6M4CT
DF2S6M4CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.058 EUR
30000+ 0.057 EUR
50000+ 0.051 EUR
Mindestbestellmenge: 10000
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