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TOCP200QK Toshiba Semiconductor and Storage Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TOCP255K(SUMID) Toshiba Semiconductor and Storage Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TC7S00F,LF TC7S00F,LF Toshiba Semiconductor and Storage TC7S00FU_datasheet_en_20140301.pdf?did=20177&prodName=TC7S00FU Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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RN2901,LXHF(CT RN2901,LXHF(CT Toshiba Semiconductor and Storage RN2905_datasheet_en_20230112.pdf?did=18907&prodName=RN2905 Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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RN2901,LXHF(CT RN2901,LXHF(CT Toshiba Semiconductor and Storage RN2905_datasheet_en_20230112.pdf?did=18907&prodName=RN2905 Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
31+0.59 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 23
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RN2901FE,LXHF(CT RN2901FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19092&prodName=RN2901FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.15 EUR
8000+0.14 EUR
Mindestbestellmenge: 4000
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RN2901FE,LXHF(CT RN2901FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19092&prodName=RN2901FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
36+0.50 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.15 EUR
Mindestbestellmenge: 27
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74LCX157FT 74LCX157FT Toshiba Semiconductor and Storage 74LCX157FT_datasheet_en_20160915.pdf?did=15433&prodName=74LCX157FT Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Produkt ist nicht verfügbar
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74LCX157FT 74LCX157FT Toshiba Semiconductor and Storage 74LCX157FT_datasheet_en_20160915.pdf?did=15433&prodName=74LCX157FT Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
35+0.52 EUR
38+0.47 EUR
100+0.35 EUR
250+0.32 EUR
500+0.26 EUR
1000+0.20 EUR
Mindestbestellmenge: 28
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74LCX14FT 74LCX14FT Toshiba Semiconductor and Storage docget.jsp?did=15394&prodName=74LCX14FT Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.23 EUR
Mindestbestellmenge: 2500
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74VHCT00AFT 74VHCT00AFT Toshiba Semiconductor and Storage TC74VHCT00AF%2C%20AFN%2C%20AFT%2C%20AFK%20_Rev_Dec2008.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74VHCT00AFT 74VHCT00AFT Toshiba Semiconductor and Storage TC74VHCT00AF%2C%20AFN%2C%20AFT%2C%20AFK%20_Rev_Dec2008.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 1947 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
27+0.65 EUR
33+0.54 EUR
100+0.41 EUR
250+0.34 EUR
500+0.30 EUR
1000+0.27 EUR
Mindestbestellmenge: 17
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74LCX540FT 74LCX540FT Toshiba Semiconductor and Storage 74LCX540FT_datasheet_en_20140624.pdf?did=15177&prodName=74LCX540FT Description: IC BUFFER INVERT 3.6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.32 EUR
5000+0.29 EUR
7500+0.28 EUR
Mindestbestellmenge: 2500
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74VHC174FT 74VHC174FT Toshiba Semiconductor and Storage docget.jsp?did=15747&prodName=74VHC174FT Description: IC FF D-TYPE SNGL 6BIT 16TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-TSSOPB
Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
Grade: Automotive
Number of Bits per Element: 6
Qualification: AEC-Q100
auf Bestellung 1885 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
32+0.55 EUR
39+0.45 EUR
100+0.34 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 19
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74VHC373FT 74VHC373FT Toshiba Semiconductor and Storage docget.jsp?did=15353&prodName=74VHC373FT Description: IC LATCH OCTAL D-TYPE 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5ns
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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74VHC373FT 74VHC373FT Toshiba Semiconductor and Storage docget.jsp?did=15353&prodName=74VHC373FT Description: IC LATCH OCTAL D-TYPE 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5ns
Supplier Device Package: 20-TSSOP
auf Bestellung 2045 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
50+0.36 EUR
56+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 34
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74LCX574FT 74LCX574FT Toshiba Semiconductor and Storage docget.jsp?did=15180&prodName=74LCX574FT Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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74LCX574FT 74LCX574FT Toshiba Semiconductor and Storage docget.jsp?did=15180&prodName=74LCX574FT Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Number of Bits per Element: 8
auf Bestellung 2402 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
42+0.43 EUR
47+0.38 EUR
100+0.33 EUR
250+0.30 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 29
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TCR2DG25,LF Toshiba Semiconductor and Storage TCR2DG_Series.pdf Description: IC REG LINEAR 2.5V 200MA 4-WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 75dB ~ 50dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.13V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TLP5754(D4-TP4,E TLP5754(D4-TP4,E Toshiba Semiconductor and Storage TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.71 EUR
Mindestbestellmenge: 1500
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TLP5754(D4-TP4,E TLP5754(D4-TP4,E Toshiba Semiconductor and Storage TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2238 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.80 EUR
10+3.19 EUR
100+2.35 EUR
500+2.03 EUR
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TLP5754(TP4,E TLP5754(TP4,E Toshiba Semiconductor and Storage TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.84 EUR
3000+1.77 EUR
Mindestbestellmenge: 1500
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TLP5754(TP4,E TLP5754(TP4,E Toshiba Semiconductor and Storage TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.73 EUR
10+3.13 EUR
100+2.31 EUR
500+1.99 EUR
Mindestbestellmenge: 4
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TC7SPB9306TU,LF(CT TC7SPB9306TU,LF(CT Toshiba Semiconductor and Storage TC7SPB9306TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9306TU Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
Produkt ist nicht verfügbar
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TC7SPB9306TU,LF(CT TC7SPB9306TU,LF(CT Toshiba Semiconductor and Storage TC7SPB9306TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9306TU Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
auf Bestellung 1668 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
33+0.55 EUR
36+0.50 EUR
100+0.37 EUR
250+0.34 EUR
500+0.28 EUR
1000+0.21 EUR
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TC7MPB9307FK(EL) TC7MPB9307FK(EL) Toshiba Semiconductor and Storage TC7MPB9307FK_datasheet_en_20220824.pdf?did=61841&prodName=TC7MPB9307FK Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
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2500+0.54 EUR
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TC7MPB9307FK(EL) TC7MPB9307FK(EL) Toshiba Semiconductor and Storage TC7MPB9307FK_datasheet_en_20220824.pdf?did=61841&prodName=TC7MPB9307FK Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-VSSOP
auf Bestellung 5586 Stücke:
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14+1.29 EUR
25+1.22 EUR
100+1.00 EUR
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TC7MPB9327FT(EL) TC7MPB9327FT(EL) Toshiba Semiconductor and Storage TC7MPB9327FT_datasheet_en_20170223.pdf Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:2
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
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TC7MPB9327FT(EL) TC7MPB9327FT(EL) Toshiba Semiconductor and Storage TC7MPB9327FT_datasheet_en_20170223.pdf Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:2
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
auf Bestellung 2000 Stücke:
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17+1.04 EUR
20+0.89 EUR
25+0.83 EUR
100+0.67 EUR
250+0.62 EUR
500+0.52 EUR
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TBAT54A,LM TBAT54A,LM Toshiba Semiconductor and Storage docget.jsp?did=37137&prodName=TBAT54A Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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TBAT54A,LM TBAT54A,LM Toshiba Semiconductor and Storage docget.jsp?did=37137&prodName=TBAT54A Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 2650 Stücke:
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112+0.16 EUR
122+0.14 EUR
167+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
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TB6613FTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=11241&prodName=TB6613FTG Description: 8 H-BRIDGE DRIVER, CAN BE CONFIG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN4989(TE85L,F) RN4989(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18989&prodName=RN4989 Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
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RN4989(TE85L,F) RN4989(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18989&prodName=RN4989 Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
40+0.45 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.13 EUR
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TLP151A(TPL,E TLP151A(TPL,E Toshiba Semiconductor and Storage TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP151A(TPL,E TLP151A(TPL,E Toshiba Semiconductor and Storage TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 2900 Stücke:
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7+2.80 EUR
10+1.78 EUR
100+1.26 EUR
500+1.05 EUR
1000+0.99 EUR
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TMPM3HNFDADFG Toshiba Semiconductor and Storage datasheet_en_20230707.pdf?did=139822 Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 93
Produkt ist nicht verfügbar
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TMPM3HLFDAUG Toshiba Semiconductor and Storage datasheet_en_20230707.pdf?did=139822 Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 57
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.87 EUR
10+8.72 EUR
25+7.63 EUR
160+7.27 EUR
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TMPM3HPF10BFG Toshiba Semiconductor and Storage datasheet_en_20230428.pdf?did=151593 Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 19x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 128-LQFP (14x14)
Number of I/O: 118
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.11 EUR
10+8.89 EUR
25+7.79 EUR
180+7.45 EUR
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TMPM3HMFDAFG Toshiba Semiconductor and Storage datasheet_en_20230707.pdf?did=139822 Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 73
auf Bestellung 119 Stücke:
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1+18.30 EUR
10+12.50 EUR
25+10.99 EUR
119+9.10 EUR
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TMPM3HNFDAFG TMPM3HNFDAFG Toshiba Semiconductor and Storage datasheet_en_20230707.pdf?did=139822 Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 93
Produkt ist nicht verfügbar
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TMPM3HQFDAFG Toshiba Semiconductor and Storage datasheet_en_20230707.pdf?did=139822 Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 135
auf Bestellung 60 Stücke:
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2+17.20 EUR
10+11.87 EUR
60+10.72 EUR
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TMPM3HNF10BFG TMPM3HNF10BFG Toshiba Semiconductor and Storage datasheet_en_20230428.pdf?did=151593 Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 92
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.08 EUR
10+13.25 EUR
25+12.29 EUR
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TMPM3HQF10BFG TMPM3HQF10BFG Toshiba Semiconductor and Storage datasheet_en_20230428.pdf?did=151593 Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 134
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.59 EUR
10+18.60 EUR
60+14.94 EUR
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TDTA114E,LM TDTA114E,LM Toshiba Semiconductor and Storage TDTA114E_datasheet_en_20201113.pdf?did=36696&prodName=TDTA114E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Produkt ist nicht verfügbar
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TDTA114E,LM TDTA114E,LM Toshiba Semiconductor and Storage TDTA114E_datasheet_en_20201113.pdf?did=36696&prodName=TDTA114E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
113+0.16 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
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TC7WU04FU,LF TC7WU04FU,LF Toshiba Semiconductor and Storage TC7WU04FK_datasheet_en_20141118.pdf?did=20208&prodName=TC7WU04FK Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 6000 Stücke:
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3000+0.18 EUR
6000+0.17 EUR
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TC7WU04FU,LF TC7WU04FU,LF Toshiba Semiconductor and Storage TC7WU04FK_datasheet_en_20141118.pdf?did=20208&prodName=TC7WU04FK Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 8040 Stücke:
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28+0.65 EUR
34+0.52 EUR
37+0.48 EUR
100+0.36 EUR
250+0.32 EUR
500+0.27 EUR
1000+0.20 EUR
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TDTA123J,LM TDTA123J,LM Toshiba Semiconductor and Storage TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Produkt ist nicht verfügbar
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TDTA123J,LM TDTA123J,LM Toshiba Semiconductor and Storage TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
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117+0.15 EUR
188+0.09 EUR
500+0.07 EUR
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TRS4V65H,LQ TRS4V65H,LQ Toshiba Semiconductor and Storage TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
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2500+1.27 EUR
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TRS4V65H,LQ TRS4V65H,LQ Toshiba Semiconductor and Storage TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 4728 Stücke:
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TRS6V65H,LQ TRS6V65H,LQ Toshiba Semiconductor and Storage TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
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TRS6V65H,LQ TRS6V65H,LQ Toshiba Semiconductor and Storage TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
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TRS8V65H,LQ TRS8V65H,LQ Toshiba Semiconductor and Storage TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TRS8V65H,LQ TRS8V65H,LQ Toshiba Semiconductor and Storage TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
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500+2.17 EUR
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TRS2E65H,S1Q Toshiba Semiconductor and Storage TRS2E65H_datasheet_en_20230411.pdf?did=152099&prodName=TRS2E65H Description: G3 SIC-SBD 650V 2A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 333 Stücke:
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TRS10V65H,LQ TRS10V65H,LQ Toshiba Semiconductor and Storage TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H Description: G3 SIC-SBD 650V 10A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2500 Stücke:
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2500+2.21 EUR
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TRS10V65H,LQ TRS10V65H,LQ Toshiba Semiconductor and Storage TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H Description: G3 SIC-SBD 650V 10A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3975 Stücke:
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TRS3E65H,S1Q Toshiba Semiconductor and Storage Description: G3 SIC-SBD 650V 3A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 199pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 400 Stücke:
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TOCP200QK
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TOCP255K(SUMID)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVING MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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TC7S00F,LF TC7S00FU_datasheet_en_20140301.pdf?did=20177&prodName=TC7S00FU
TC7S00F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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RN2901,LXHF(CT RN2905_datasheet_en_20230112.pdf?did=18907&prodName=RN2905
RN2901,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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RN2901,LXHF(CT RN2905_datasheet_en_20230112.pdf?did=18907&prodName=RN2905
RN2901,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
31+0.59 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
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RN2901FE,LXHF(CT docget.jsp?did=19092&prodName=RN2901FE
RN2901FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.15 EUR
8000+0.14 EUR
Mindestbestellmenge: 4000
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RN2901FE,LXHF(CT docget.jsp?did=19092&prodName=RN2901FE
RN2901FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
36+0.50 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.15 EUR
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74LCX157FT 74LCX157FT_datasheet_en_20160915.pdf?did=15433&prodName=74LCX157FT
74LCX157FT
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Produkt ist nicht verfügbar
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74LCX157FT 74LCX157FT_datasheet_en_20160915.pdf?did=15433&prodName=74LCX157FT
74LCX157FT
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
35+0.52 EUR
38+0.47 EUR
100+0.35 EUR
250+0.32 EUR
500+0.26 EUR
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74LCX14FT docget.jsp?did=15394&prodName=74LCX14FT
74LCX14FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.23 EUR
Mindestbestellmenge: 2500
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74VHCT00AFT TC74VHCT00AF%2C%20AFN%2C%20AFT%2C%20AFK%20_Rev_Dec2008.pdf
74VHCT00AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74VHCT00AFT TC74VHCT00AF%2C%20AFN%2C%20AFT%2C%20AFK%20_Rev_Dec2008.pdf
74VHCT00AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 1947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
27+0.65 EUR
33+0.54 EUR
100+0.41 EUR
250+0.34 EUR
500+0.30 EUR
1000+0.27 EUR
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74LCX540FT 74LCX540FT_datasheet_en_20140624.pdf?did=15177&prodName=74LCX540FT
74LCX540FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 3.6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.32 EUR
5000+0.29 EUR
7500+0.28 EUR
Mindestbestellmenge: 2500
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74VHC174FT docget.jsp?did=15747&prodName=74VHC174FT
74VHC174FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 6BIT 16TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-TSSOPB
Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
Grade: Automotive
Number of Bits per Element: 6
Qualification: AEC-Q100
auf Bestellung 1885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
32+0.55 EUR
39+0.45 EUR
100+0.34 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 19
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74VHC373FT docget.jsp?did=15353&prodName=74VHC373FT
74VHC373FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5ns
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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74VHC373FT docget.jsp?did=15353&prodName=74VHC373FT
74VHC373FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5ns
Supplier Device Package: 20-TSSOP
auf Bestellung 2045 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.36 EUR
56+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 34
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74LCX574FT docget.jsp?did=15180&prodName=74LCX574FT
74LCX574FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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74LCX574FT docget.jsp?did=15180&prodName=74LCX574FT
74LCX574FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Number of Bits per Element: 8
auf Bestellung 2402 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
42+0.43 EUR
47+0.38 EUR
100+0.33 EUR
250+0.30 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 29
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TCR2DG25,LF TCR2DG_Series.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 200MA 4-WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 75dB ~ 50dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.13V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TLP5754(D4-TP4,E TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754
TLP5754(D4-TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.71 EUR
Mindestbestellmenge: 1500
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TLP5754(D4-TP4,E TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754
TLP5754(D4-TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.80 EUR
10+3.19 EUR
100+2.35 EUR
500+2.03 EUR
Mindestbestellmenge: 4
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TLP5754(TP4,E TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754
TLP5754(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.84 EUR
3000+1.77 EUR
Mindestbestellmenge: 1500
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TLP5754(TP4,E TLP5754_datasheet_en_20191222.pdf?did=15356&prodName=TLP5754
TLP5754(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
10+3.13 EUR
100+2.31 EUR
500+1.99 EUR
Mindestbestellmenge: 4
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TC7SPB9306TU,LF(CT TC7SPB9306TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9306TU
TC7SPB9306TU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
Produkt ist nicht verfügbar
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TC7SPB9306TU,LF(CT TC7SPB9306TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9306TU
TC7SPB9306TU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
auf Bestellung 1668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
33+0.55 EUR
36+0.50 EUR
100+0.37 EUR
250+0.34 EUR
500+0.28 EUR
1000+0.21 EUR
Mindestbestellmenge: 26
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TC7MPB9307FK(EL) TC7MPB9307FK_datasheet_en_20220824.pdf?did=61841&prodName=TC7MPB9307FK
TC7MPB9307FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.54 EUR
Mindestbestellmenge: 2500
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TC7MPB9307FK(EL) TC7MPB9307FK_datasheet_en_20220824.pdf?did=61841&prodName=TC7MPB9307FK
TC7MPB9307FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-VSSOP
auf Bestellung 5586 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
14+1.29 EUR
25+1.22 EUR
100+1.00 EUR
250+0.94 EUR
500+0.83 EUR
1000+0.65 EUR
Mindestbestellmenge: 13
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TC7MPB9327FT(EL) TC7MPB9327FT_datasheet_en_20170223.pdf
TC7MPB9327FT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:2
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.37 EUR
Mindestbestellmenge: 2000
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TC7MPB9327FT(EL) TC7MPB9327FT_datasheet_en_20170223.pdf
TC7MPB9327FT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:2
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
20+0.89 EUR
25+0.83 EUR
100+0.67 EUR
250+0.62 EUR
500+0.52 EUR
1000+0.40 EUR
Mindestbestellmenge: 17
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TBAT54A,LM docget.jsp?did=37137&prodName=TBAT54A
TBAT54A,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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TBAT54A,LM docget.jsp?did=37137&prodName=TBAT54A
TBAT54A,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 2650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
122+0.14 EUR
167+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 112
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TB6613FTG,8,EL docget.jsp?did=11241&prodName=TB6613FTG
Hersteller: Toshiba Semiconductor and Storage
Description: 8 H-BRIDGE DRIVER, CAN BE CONFIG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN4989(TE85L,F) docget.jsp?did=18989&prodName=RN4989
RN4989(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
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RN4989(TE85L,F) docget.jsp?did=18989&prodName=RN4989
RN4989(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
40+0.45 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 30
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TLP151A(TPL,E TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A
TLP151A(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP151A(TPL,E TLP151A_datasheet_en_20170609.pdf?did=13891&prodName=TLP151A
TLP151A(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.80 EUR
10+1.78 EUR
100+1.26 EUR
500+1.05 EUR
1000+0.99 EUR
Mindestbestellmenge: 7
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TMPM3HNFDADFG datasheet_en_20230707.pdf?did=139822
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 93
Produkt ist nicht verfügbar
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TMPM3HLFDAUG datasheet_en_20230707.pdf?did=139822
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 57
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.87 EUR
10+8.72 EUR
25+7.63 EUR
160+7.27 EUR
Mindestbestellmenge: 2
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TMPM3HPF10BFG datasheet_en_20230428.pdf?did=151593
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 19x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 128-LQFP (14x14)
Number of I/O: 118
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.11 EUR
10+8.89 EUR
25+7.79 EUR
180+7.45 EUR
Mindestbestellmenge: 2
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TMPM3HMFDAFG datasheet_en_20230707.pdf?did=139822
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 73
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.30 EUR
10+12.50 EUR
25+10.99 EUR
119+9.10 EUR
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TMPM3HNFDAFG datasheet_en_20230707.pdf?did=139822
TMPM3HNFDAFG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 93
Produkt ist nicht verfügbar
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TMPM3HQFDAFG datasheet_en_20230707.pdf?did=139822
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 135
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.20 EUR
10+11.87 EUR
60+10.72 EUR
Mindestbestellmenge: 2
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TMPM3HNF10BFG datasheet_en_20230428.pdf?did=151593
TMPM3HNF10BFG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 92
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.08 EUR
10+13.25 EUR
25+12.29 EUR
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TMPM3HQF10BFG datasheet_en_20230428.pdf?did=151593
TMPM3HQF10BFG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 134
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.59 EUR
10+18.60 EUR
60+14.94 EUR
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TDTA114E,LM TDTA114E_datasheet_en_20201113.pdf?did=36696&prodName=TDTA114E
TDTA114E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Produkt ist nicht verfügbar
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TDTA114E,LM TDTA114E_datasheet_en_20201113.pdf?did=36696&prodName=TDTA114E
TDTA114E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
113+0.16 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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TC7WU04FU,LF TC7WU04FK_datasheet_en_20141118.pdf?did=20208&prodName=TC7WU04FK
TC7WU04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
Mindestbestellmenge: 3000
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TC7WU04FU,LF TC7WU04FK_datasheet_en_20141118.pdf?did=20208&prodName=TC7WU04FK
TC7WU04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 8040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
34+0.52 EUR
37+0.48 EUR
100+0.36 EUR
250+0.32 EUR
500+0.27 EUR
1000+0.20 EUR
Mindestbestellmenge: 28
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TDTA123J,LM TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J
TDTA123J,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDTA123J,LM TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J
TDTA123J,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
117+0.15 EUR
188+0.09 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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TRS4V65H,LQ TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H
TRS4V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.27 EUR
Mindestbestellmenge: 2500
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TRS4V65H,LQ TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H
TRS4V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 4728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.22 EUR
10+2.72 EUR
100+1.87 EUR
500+1.50 EUR
1000+1.38 EUR
Mindestbestellmenge: 5
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TRS6V65H,LQ TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H
TRS6V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.60 EUR
Mindestbestellmenge: 2500
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TRS6V65H,LQ TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H
TRS6V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 4803 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.98 EUR
10+3.24 EUR
100+2.24 EUR
500+1.82 EUR
1000+1.68 EUR
Mindestbestellmenge: 4
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TRS8V65H,LQ TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H
TRS8V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TRS8V65H,LQ TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H
TRS8V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.35 EUR
10+3.56 EUR
100+2.66 EUR
500+2.17 EUR
1000+2.01 EUR
Mindestbestellmenge: 4
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TRS2E65H,S1Q TRS2E65H_datasheet_en_20230411.pdf?did=152099&prodName=TRS2E65H
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 2A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.40 EUR
10+2.18 EUR
100+1.48 EUR
Mindestbestellmenge: 6
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TRS10V65H,LQ TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H
TRS10V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 10A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.21 EUR
Mindestbestellmenge: 2500
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TRS10V65H,LQ TRS10V65H_datasheet_en_20230410.pdf?did=152085&prodName=TRS10V65H
TRS10V65H,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 10A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.34 EUR
10+4.16 EUR
100+2.92 EUR
500+2.39 EUR
1000+2.23 EUR
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TRS3E65H,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 3A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 199pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
10+2.63 EUR
100+2.11 EUR
Mindestbestellmenge: 7
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