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SSM6L807R,LF SSM6L807R,LF Toshiba Semiconductor and Storage docget.jsp?did=63987&prodName=SSM6L807R Description: MOSFET N/P-CH 30V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Produkt ist nicht verfügbar
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TK155E60Z1,S1X TK155E60Z1,S1X Toshiba Semiconductor and Storage TK155E60Z1_datasheet_en_20240725.pdf?did=159373&prodName=TK155E60Z1 Description: N-CH MOSFET 600 V 0.155 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.25 EUR
50+4.29 EUR
100+3.91 EUR
Mindestbestellmenge: 3
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TPH2R70AR5,LQ TPH2R70AR5,LQ Toshiba Semiconductor and Storage TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5 Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10000 Stücke:
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5000+1.08 EUR
10000+1.04 EUR
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TPH2R70AR5,LQ TPH2R70AR5,LQ Toshiba Semiconductor and Storage TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5 Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 13551 Stücke:
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5+3.94 EUR
10+2.54 EUR
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500+1.39 EUR
1000+1.28 EUR
2000+1.27 EUR
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7UL1T08NX,ELF 7UL1T08NX,ELF Toshiba Semiconductor and Storage 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
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7UL1T08NX,ELF 7UL1T08NX,ELF Toshiba Semiconductor and Storage 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
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56+0.32 EUR
84+0.21 EUR
94+0.19 EUR
111+0.16 EUR
250+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
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HDWG51JXZSTB HDWG51JXZSTB Toshiba Semiconductor and Storage Toshiba_N300Pro-SalesSheet_English-Web.pdf Description: HDD 18TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 28 Stücke:
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1+832.34 EUR
10+754.58 EUR
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TK200V60Z1,LQ TK200V60Z1,LQ Toshiba Semiconductor and Storage TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1 Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
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2500+2.5 EUR
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TK200V60Z1,LQ TK200V60Z1,LQ Toshiba Semiconductor and Storage TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1 Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.5 EUR
10+4.96 EUR
100+3.52 EUR
500+3.06 EUR
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TK200U65Z5,RQ TK200U65Z5,RQ Toshiba Semiconductor and Storage TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5 Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+3.43 EUR
Mindestbestellmenge: 2000
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TK200U65Z5,RQ TK200U65Z5,RQ Toshiba Semiconductor and Storage TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5 Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.49 EUR
10+6.35 EUR
100+4.57 EUR
500+4.19 EUR
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TK200V65Z5,LQ TK200V65Z5,LQ Toshiba Semiconductor and Storage TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5 Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+3.98 EUR
Mindestbestellmenge: 2500
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TK200V65Z5,LQ TK200V65Z5,LQ Toshiba Semiconductor and Storage TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5 Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.6 EUR
10+7.14 EUR
100+5.17 EUR
500+4.87 EUR
Mindestbestellmenge: 2
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TK200A65Z5,S4X TK200A65Z5,S4X Toshiba Semiconductor and Storage TK200A65Z5_datasheet_en_20240408.pdf?did=158595&prodName=TK200A65Z5 Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.29 EUR
50+4.94 EUR
100+4.52 EUR
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TK200E65Z5,S1X TK200E65Z5,S1X Toshiba Semiconductor and Storage TK200E65Z5_datasheet_en_20240408.pdf?did=158599&prodName=TK200E65Z5 Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.54 EUR
50+5.08 EUR
100+4.65 EUR
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TCR5FM22A,RF TCR5FM22A,RF Toshiba Semiconductor and Storage TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.22 EUR
10000+0.21 EUR
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TCR5FM22A,RF TCR5FM22A,RF Toshiba Semiconductor and Storage TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
2500+0.22 EUR
Mindestbestellmenge: 34
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2SA1721OTE85LF 2SA1721OTE85LF Toshiba Semiconductor and Storage 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
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20+0.9 EUR
32+0.55 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.24 EUR
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HDEPN20GEA51F Toshiba Semiconductor and Storage Description: 16TB SAS NEARLINE 4KN
Packaging: Bulk
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
1+1322.25 EUR
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HDEPN10GEA51F Toshiba Semiconductor and Storage Description: 16TB SAS NEARLINE 512E
Packaging: Bulk
auf Bestellung 10 Stücke:
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1+1322.25 EUR
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2SK3074TE12LF 2SK3074TE12LF Toshiba Semiconductor and Storage docget.jsp?did=17914&prodName=2SK3074 Description: MOSF RF N CH 30V 1A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 630mW
Gain: 14.9dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-62
Voltage - Rated: 30 V
Voltage - Test: 9.6 V
Current - Test: 50 mA
Produkt ist nicht verfügbar
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DF3A6.8LCT,L3F DF3A6.8LCT,L3F Toshiba Semiconductor and Storage docget.jsp?did=883&prodName=DF3A6.8LCT Description: TVS DIODE CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Supplier Device Package: CST3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 10000 Stücke:
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10000+0.092 EUR
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DF3A6.8LCT,L3F DF3A6.8LCT,L3F Toshiba Semiconductor and Storage docget.jsp?did=883&prodName=DF3A6.8LCT Description: TVS DIODE CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Supplier Device Package: CST3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
55+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
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HDWG51GXZSTB HDWG51GXZSTB Toshiba Semiconductor and Storage Toshiba_N300Pro-SalesSheet_English-Web.pdf Description: HDD 16TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 16TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
1+796.19 EUR
10+719.73 EUR
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HDWG51EXZSTA Toshiba Semiconductor and Storage Description: 14 TB HDD SATA 3.5"
Packaging: Bulk
auf Bestellung 2 Stücke:
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1+753.03 EUR
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CLH05(T6L,NKOD,Q) Toshiba Semiconductor and Storage CLH05.pdf Description: DIODE STANDARD 200V 5A LFLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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TMPM4GQF10FG Toshiba Semiconductor and Storage TMPM4GQF10FG_datasheet_en_20240531.pdf?did=139604&prodName=TMPM4GQF10FG Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 127
Produkt ist nicht verfügbar
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TMPM4GQF10XBG Toshiba Semiconductor and Storage TMPM4GQF10XBG_datasheet_en_20240531.pdf?did=139604&prodName=TMPM4GQF10XBG Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 145-VFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 145-VFBGA (12x12)
Number of I/O: 127
Produkt ist nicht verfügbar
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TMPM4NQF10FG Toshiba Semiconductor and Storage TMPM4NQF10FG_datasheet_en_20241129.pdf?did=139479&prodName=TMPM4NQF10FG Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 118
Produkt ist nicht verfügbar
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TMPM4NQF10XBG Toshiba Semiconductor and Storage TMPM4NQF10XBG_datasheet_en_20241129.pdf?did=139479&prodName=TMPM4NQF10XBG Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 145-VFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 145-VFBGA (12x12)
Number of I/O: 118
Produkt ist nicht verfügbar
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TPHR6704RL,LQ TPHR6704RL,LQ Toshiba Semiconductor and Storage TPHR6704RL_datasheet_en_20250702.pdf?did=163943&prodName=TPHR6704RL Description: N-CH MOSFET 40V 0.00067OHM SOP A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
auf Bestellung 5000 Stücke:
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5000+1.7 EUR
Mindestbestellmenge: 5000
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TPHR6704RL,LQ TPHR6704RL,LQ Toshiba Semiconductor and Storage TPHR6704RL_datasheet_en_20250702.pdf?did=163943&prodName=TPHR6704RL Description: N-CH MOSFET 40V 0.00067OHM SOP A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
auf Bestellung 9933 Stücke:
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4+5.63 EUR
10+3.67 EUR
100+2.56 EUR
500+2.09 EUR
1000+2.08 EUR
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XPH3R908QB,L1XHQ XPH3R908QB,L1XHQ Toshiba Semiconductor and Storage XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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XPH3R908QB,L1XHQ XPH3R908QB,L1XHQ Toshiba Semiconductor and Storage XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RN2421(TE85L,F) RN2421(TE85L,F) Toshiba Semiconductor and Storage RN2422_datasheet_en_20140301.pdf?did=18885&prodName=RN2422 Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN2421(TE85L,F) RN2421(TE85L,F) Toshiba Semiconductor and Storage RN2422_datasheet_en_20140301.pdf?did=18885&prodName=RN2422 Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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TC74ACT245FTEL Toshiba Semiconductor and Storage Description: IC TXRX 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
32+0.56 EUR
35+0.5 EUR
100+0.44 EUR
250+0.41 EUR
500+0.39 EUR
1000+0.38 EUR
Mindestbestellmenge: 22
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SSM6L807R,LF docget.jsp?did=63987&prodName=SSM6L807R
SSM6L807R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Produkt ist nicht verfügbar
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TK155E60Z1,S1X TK155E60Z1_datasheet_en_20240725.pdf?did=159373&prodName=TK155E60Z1
TK155E60Z1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.155 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.25 EUR
50+4.29 EUR
100+3.91 EUR
Mindestbestellmenge: 3
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TPH2R70AR5,LQ TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5
TPH2R70AR5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.08 EUR
10000+1.04 EUR
Mindestbestellmenge: 5000
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TPH2R70AR5,LQ TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5
TPH2R70AR5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 13551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.54 EUR
100+1.73 EUR
500+1.39 EUR
1000+1.28 EUR
2000+1.27 EUR
Mindestbestellmenge: 5
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7UL1T08NX,ELF 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX
7UL1T08NX,ELF
Hersteller: Toshiba Semiconductor and Storage
Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.12 EUR
Mindestbestellmenge: 5000
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7UL1T08NX,ELF 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX
7UL1T08NX,ELF
Hersteller: Toshiba Semiconductor and Storage
Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
84+0.21 EUR
94+0.19 EUR
111+0.16 EUR
250+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 56
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HDWG51JXZSTB Toshiba_N300Pro-SalesSheet_English-Web.pdf
HDWG51JXZSTB
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+832.34 EUR
10+754.58 EUR
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TK200V60Z1,LQ TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1
TK200V60Z1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.5 EUR
Mindestbestellmenge: 2500
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TK200V60Z1,LQ TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1
TK200V60Z1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.5 EUR
10+4.96 EUR
100+3.52 EUR
500+3.06 EUR
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TK200U65Z5,RQ TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5
TK200U65Z5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.43 EUR
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TK200U65Z5,RQ TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5
TK200U65Z5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.49 EUR
10+6.35 EUR
100+4.57 EUR
500+4.19 EUR
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TK200V65Z5,LQ TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5
TK200V65Z5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
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2500+3.98 EUR
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TK200V65Z5,LQ TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5
TK200V65Z5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.6 EUR
10+7.14 EUR
100+5.17 EUR
500+4.87 EUR
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TK200A65Z5,S4X TK200A65Z5_datasheet_en_20240408.pdf?did=158595&prodName=TK200A65Z5
TK200A65Z5,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.29 EUR
50+4.94 EUR
100+4.52 EUR
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TK200E65Z5,S1X TK200E65Z5_datasheet_en_20240408.pdf?did=158599&prodName=TK200E65Z5
TK200E65Z5,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.54 EUR
50+5.08 EUR
100+4.65 EUR
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TCR5FM22A,RF TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A
TCR5FM22A,RF
Hersteller: Toshiba Semiconductor and Storage
Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.22 EUR
10000+0.21 EUR
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TCR5FM22A,RF TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A
TCR5FM22A,RF
Hersteller: Toshiba Semiconductor and Storage
Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
2500+0.22 EUR
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2SA1721OTE85LF 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721
2SA1721OTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
32+0.55 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.24 EUR
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HDEPN20GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 16TB SAS NEARLINE 4KN
Packaging: Bulk
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1322.25 EUR
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HDEPN10GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 16TB SAS NEARLINE 512E
Packaging: Bulk
auf Bestellung 10 Stücke:
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Anzahl Preis
1+1322.25 EUR
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2SK3074TE12LF docget.jsp?did=17914&prodName=2SK3074
2SK3074TE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 30V 1A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 630mW
Gain: 14.9dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-62
Voltage - Rated: 30 V
Voltage - Test: 9.6 V
Current - Test: 50 mA
Produkt ist nicht verfügbar
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DF3A6.8LCT,L3F docget.jsp?did=883&prodName=DF3A6.8LCT
DF3A6.8LCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Supplier Device Package: CST3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.092 EUR
Mindestbestellmenge: 10000
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DF3A6.8LCT,L3F docget.jsp?did=883&prodName=DF3A6.8LCT
DF3A6.8LCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Supplier Device Package: CST3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
55+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
Mindestbestellmenge: 34
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HDWG51GXZSTB Toshiba_N300Pro-SalesSheet_English-Web.pdf
HDWG51GXZSTB
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 16TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 16TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+796.19 EUR
10+719.73 EUR
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HDWG51EXZSTA
Hersteller: Toshiba Semiconductor and Storage
Description: 14 TB HDD SATA 3.5"
Packaging: Bulk
auf Bestellung 2 Stücke:
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Anzahl Preis
1+753.03 EUR
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CLH05(T6L,NKOD,Q) CLH05.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 5A LFLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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TMPM4GQF10FG TMPM4GQF10FG_datasheet_en_20240531.pdf?did=139604&prodName=TMPM4GQF10FG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 127
Produkt ist nicht verfügbar
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TMPM4GQF10XBG TMPM4GQF10XBG_datasheet_en_20240531.pdf?did=139604&prodName=TMPM4GQF10XBG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 145-VFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 145-VFBGA (12x12)
Number of I/O: 127
Produkt ist nicht verfügbar
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TMPM4NQF10FG TMPM4NQF10FG_datasheet_en_20241129.pdf?did=139479&prodName=TMPM4NQF10FG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 118
Produkt ist nicht verfügbar
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TMPM4NQF10XBG TMPM4NQF10XBG_datasheet_en_20241129.pdf?did=139479&prodName=TMPM4NQF10XBG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 145-VFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 145-VFBGA (12x12)
Number of I/O: 118
Produkt ist nicht verfügbar
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TPHR6704RL,LQ TPHR6704RL_datasheet_en_20250702.pdf?did=163943&prodName=TPHR6704RL
TPHR6704RL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 40V 0.00067OHM SOP A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.7 EUR
Mindestbestellmenge: 5000
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TPHR6704RL,LQ TPHR6704RL_datasheet_en_20250702.pdf?did=163943&prodName=TPHR6704RL
TPHR6704RL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 40V 0.00067OHM SOP A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
auf Bestellung 9933 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.63 EUR
10+3.67 EUR
100+2.56 EUR
500+2.09 EUR
1000+2.08 EUR
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XPH3R908QB,L1XHQ XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB
XPH3R908QB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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XPH3R908QB,L1XHQ XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB
XPH3R908QB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RN2421(TE85L,F) RN2422_datasheet_en_20140301.pdf?did=18885&prodName=RN2422
RN2421(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN2421(TE85L,F) RN2422_datasheet_en_20140301.pdf?did=18885&prodName=RN2422
RN2421(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC74ACT245FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
32+0.56 EUR
35+0.5 EUR
100+0.44 EUR
250+0.41 EUR
500+0.39 EUR
1000+0.38 EUR
Mindestbestellmenge: 22
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