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TLP3483(TP,E Toshiba Semiconductor and Storage Description: PHOTORELAY
Packaging: Tape & Reel (TR)
Package / Case: 4-LDFN
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 350 mA
Supplier Device Package: S-VSON4T (3.4x2.1)
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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TLP176D(TP,M,F) TLP176D(TP,M,F) Toshiba Semiconductor and Storage docget.jsp?did=17004&prodName=TLP176D Description: PHOTORELAY MOSFET OUT 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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TLP223GA(F TLP223GA(F Toshiba Semiconductor and Storage datasheet_en_20220202.pdf?did=140401 Description: PHOTORELAY 400V 6-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Produkt ist nicht verfügbar
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TK4R9E15Q5,S1X TK4R9E15Q5,S1X Toshiba Semiconductor and Storage TK4R9E15Q5_datasheet_en_20240617.pdf?did=158311&prodName=TK4R9E15Q5 Description: 150V UMOS10-HSD TO-220 4.9MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V
auf Bestellung 132 Stücke:
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3+6.51 EUR
50+5.15 EUR
100+5.05 EUR
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TK115N65Z5,S1F TK115N65Z5,S1F Toshiba Semiconductor and Storage TK115N65Z5_datasheet_en_20240215.pdf?did=157728&prodName=TK115N65Z5 Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
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2+10.33 EUR
30+5.93 EUR
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TMPM366FYXBG Toshiba Semiconductor and Storage TMPM366FxXBG_7-17-13.pdf Description: IC MCU 32BIT 256KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 73
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TMPM366FDXBG Toshiba Semiconductor and Storage TMPM366FxXBG_7-17-13.pdf Description: IC MCU 32BIT 512KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, PWM, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 74
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TMPM37AFSQG,EL Toshiba Semiconductor and Storage Description: IC MCU 32BIT 64KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, PWM, Voltage Detect, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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RN2418,LF RN2418,LF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN2418,LF RN2418,LF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2947 Stücke:
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72+0.25 EUR
124+0.14 EUR
200+0.088 EUR
500+0.064 EUR
1000+0.056 EUR
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RN1418,LF RN1418,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1418 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN1418,LF RN1418,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1418 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 171 Stücke:
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72+0.25 EUR
124+0.14 EUR
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74HC00D 74HC00D Toshiba Semiconductor and Storage docget.jsp?did=36764&prodName=74HC00D Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
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2500+0.22 EUR
5000+0.21 EUR
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74HC00D 74HC00D Toshiba Semiconductor and Storage docget.jsp?did=36764&prodName=74HC00D Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 7164 Stücke:
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34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 34
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CMH07,LQ CMH07,LQ Toshiba Semiconductor and Storage CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07 Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 6000 Stücke:
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3000+0.29 EUR
6000+0.26 EUR
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CMH07,LQ CMH07,LQ Toshiba Semiconductor and Storage CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07 Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 6000 Stücke:
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15+1.23 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
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TC74HC123AF TC74HC123AF Toshiba Semiconductor and Storage TC74HC123AF_datasheet_en_20161202.pdf?did=8561&prodName=TC74HC123AF Description: SOP16 DUAL MONOSTABLE MULTIVIBRA
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 23 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOP
Voltage - Supply: 2 V ~ 6 V
Produkt ist nicht verfügbar
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TCR3LM50A,RF TCR3LM50A,RF Toshiba Semiconductor and Storage TCR3LM50A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM50A Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
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5000+0.14 EUR
10000+0.13 EUR
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TCR3LM50A,RF TCR3LM50A,RF Toshiba Semiconductor and Storage TCR3LM50A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM50A Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
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50+0.35 EUR
74+0.24 EUR
83+0.21 EUR
100+0.18 EUR
250+0.17 EUR
500+0.16 EUR
1000+0.15 EUR
2500+0.14 EUR
Mindestbestellmenge: 50
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7UL3G34FK,LF 7UL3G34FK,LF Toshiba Semiconductor and Storage docget.jsp?did=147413&prodName=7UL3G34FK Description: IC BUFFER NON-INVERTING 3.6V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
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3000+0.13 EUR
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7UL3G34FK,LF 7UL3G34FK,LF Toshiba Semiconductor and Storage docget.jsp?did=147413&prodName=7UL3G34FK Description: IC BUFFER NON-INVERTING 3.6V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 3856 Stücke:
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77+0.23 EUR
87+0.2 EUR
102+0.17 EUR
250+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
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2SC4738-Y,LXHF 2SC4738-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19314&prodName=2SC4738 Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
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3000+0.062 EUR
6000+0.06 EUR
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2SC4738-Y,LXHF 2SC4738-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19314&prodName=2SC4738 Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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112+0.16 EUR
159+0.11 EUR
182+0.097 EUR
216+0.082 EUR
250+0.075 EUR
500+0.07 EUR
1000+0.066 EUR
Mindestbestellmenge: 112
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RN1114MFV,L3F RN1114MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=721&prodName=RN1114MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN1114MFV,L3F RN1114MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=721&prodName=RN1114MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 6394 Stücke:
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67+0.26 EUR
105+0.17 EUR
169+0.1 EUR
500+0.076 EUR
1000+0.067 EUR
2000+0.059 EUR
Mindestbestellmenge: 67
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RN2114MFV,L3F RN2114MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=742&prodName=RN2114MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2114MFV,L3F RN2114MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=742&prodName=RN2114MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 7856 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
105+0.17 EUR
169+0.1 EUR
500+0.076 EUR
1000+0.067 EUR
2000+0.059 EUR
Mindestbestellmenge: 67
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74HC4538D 74HC4538D Toshiba Semiconductor and Storage 74HC4538D_datasheet_en_20170124.pdf?did=37371&prodName=74HC4538D Description: IC MMV 2-CIR 25-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 125°C (TA)
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
55+0.32 EUR
62+0.29 EUR
100+0.25 EUR
Mindestbestellmenge: 38
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MN06ACA10T Toshiba Semiconductor and Storage cHDD-MN-Air-Product-Overview_r7R.pdf Description: HDD 10TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MN06ACA600 Toshiba Semiconductor and Storage cHDD-MN-Air-Product-Overview_r7R.pdf Description: HDD 6TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MN06ACA800 Toshiba Semiconductor and Storage cHDD-MN-Air-Product-Overview_r7R.pdf Description: HDD 8TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP387(TPR,E TLP387(TPR,E Toshiba Semiconductor and Storage TLP387_datasheet_en_20220518.pdf?did=35919&prodName=TLP387 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.47 EUR
6000+0.45 EUR
Mindestbestellmenge: 3000
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TLP387(TPR,E TLP387(TPR,E Toshiba Semiconductor and Storage TLP387_datasheet_en_20220518.pdf?did=35919&prodName=TLP387 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 8436 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
20+0.89 EUR
100+0.66 EUR
500+0.55 EUR
1000+0.51 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
TLP387(D4-TPR,E TLP387(D4-TPR,E Toshiba Semiconductor and Storage TLP387_datasheet_en_20220518.pdf?did=35919&prodName=TLP387 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.47 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TLP387(D4-TPR,E TLP387(D4-TPR,E Toshiba Semiconductor and Storage TLP387_datasheet_en_20220518.pdf?did=35919&prodName=TLP387 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4373 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
20+0.89 EUR
100+0.66 EUR
500+0.55 EUR
1000+0.51 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
TLP387(D4,E TLP387(D4,E Toshiba Semiconductor and Storage TLP387_datasheet_en_20220518.pdf?did=35919&prodName=TLP387 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
20+0.89 EUR
125+0.64 EUR
Mindestbestellmenge: 14
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TK115U65Z5,RQ TK115U65Z5,RQ Toshiba Semiconductor and Storage TK115U65Z5_datasheet_en_20240918.pdf?did=160151&prodName=TK115U65Z5 Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+3.71 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK115U65Z5,RQ TK115U65Z5,RQ Toshiba Semiconductor and Storage TK115U65Z5_datasheet_en_20240918.pdf?did=160151&prodName=TK115U65Z5 Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.42 EUR
10+6.31 EUR
100+4.56 EUR
500+4.54 EUR
Mindestbestellmenge: 2
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TK099N60Z1,S1F TK099N60Z1,S1F Toshiba Semiconductor and Storage TK099N60Z1_datasheet_en_20240826.pdf?did=159763&prodName=TK099N60Z1 Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.85 EUR
30+4.41 EUR
Mindestbestellmenge: 3
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TK155U60Z1,RQ TK155U60Z1,RQ Toshiba Semiconductor and Storage TK155U60Z1_datasheet_en_20240605.pdf?did=158309&prodName=TK155U60Z1 Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.68 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK155U60Z1,RQ TK155U60Z1,RQ Toshiba Semiconductor and Storage TK155U60Z1_datasheet_en_20240605.pdf?did=158309&prodName=TK155U60Z1 Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.23 EUR
10+3.41 EUR
100+2.38 EUR
500+2.06 EUR
Mindestbestellmenge: 4
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TK125U60Z1,RQ TK125U60Z1,RQ Toshiba Semiconductor and Storage TK125U60Z1_datasheet_en_20240605.pdf?did=158305&prodName=TK125U60Z1 Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.92 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK125U60Z1,RQ TK125U60Z1,RQ Toshiba Semiconductor and Storage TK125U60Z1_datasheet_en_20240605.pdf?did=158305&prodName=TK125U60Z1 Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.79 EUR
10+3.79 EUR
100+2.65 EUR
500+2.36 EUR
Mindestbestellmenge: 4
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TK099U60Z1,RQ TK099U60Z1,RQ Toshiba Semiconductor and Storage TK099U60Z1_datasheet_en_20240829.pdf?did=159765&prodName=TK099U60Z1 Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+2.34 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK099U60Z1,RQ TK099U60Z1,RQ Toshiba Semiconductor and Storage TK099U60Z1_datasheet_en_20240829.pdf?did=159765&prodName=TK099U60Z1 Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.67 EUR
10+4.4 EUR
100+3.11 EUR
500+2.86 EUR
Mindestbestellmenge: 3
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TK080U60Z1,RQ TK080U60Z1,RQ Toshiba Semiconductor and Storage TK080U60Z1_datasheet_en_20240605.pdf?did=158303&prodName=TK080U60Z1 Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+2.81 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK080U60Z1,RQ TK080U60Z1,RQ Toshiba Semiconductor and Storage TK080U60Z1_datasheet_en_20240605.pdf?did=158303&prodName=TK080U60Z1 Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.64 EUR
10+5.08 EUR
100+3.62 EUR
500+3.44 EUR
Mindestbestellmenge: 3
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CRZ18(TE85L,Q,M) CRZ18(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
Mindestbestellmenge: 3000
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CRZ18(TE85L,Q,M) CRZ18(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 5992 Stücke:
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CRS05(TE85L,Q,M) CRS05(TE85L,Q,M) Toshiba Semiconductor and Storage CRS05_datasheet_en_20190401.pdf?did=3163&prodName=CRS05 Description: DIODE SCHOTTKY 30V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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TC7MBL3125CFK(EL) TC7MBL3125CFK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57313&prodName=TC7MBL3125CFK Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
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TC7MBL3125CFK(EL) TC7MBL3125CFK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57313&prodName=TC7MBL3125CFK Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
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TK20J50D(F) TK20J50D(F) Toshiba Semiconductor and Storage TK20J50D_datasheet_en_20131101.pdf?did=898&prodName=TK20J50D Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 280W
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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TCR2LN21,LF(SE TCR2LN21,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN21,LF(SE TCR2LN21,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
auf Bestellung 8179 Stücke:
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131+0.13 EUR
250+0.12 EUR
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2500+0.1 EUR
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74LVC2T45FK,LF(CT Toshiba Semiconductor and Storage 74LVC2T45FK_datasheet_en_20230731.pdf?did=153503&prodName=74LVC2T45FK Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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TB67S149FG,EL TB67S149FG,EL Toshiba Semiconductor and Storage docget.jsp?did=15707&prodName=TB67S149FG Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
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TB67S149FG,EL TB67S149FG,EL Toshiba Semiconductor and Storage docget.jsp?did=15707&prodName=TB67S149FG Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
auf Bestellung 3362 Stücke:
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4+5.23 EUR
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TB67S209FTG,EL TB67S209FTG,EL Toshiba Semiconductor and Storage TB67S209FTG_datasheet_en_20161027.pdf?did=55411&prodName=TB67S209FTG Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
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4000+2.5 EUR
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TB67S209FTG,EL TB67S209FTG,EL Toshiba Semiconductor and Storage TB67S209FTG_datasheet_en_20161027.pdf?did=55411&prodName=TB67S209FTG Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
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4+4.75 EUR
10+3.57 EUR
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250+2.79 EUR
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TLP3483(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY
Packaging: Tape & Reel (TR)
Package / Case: 4-LDFN
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 350 mA
Supplier Device Package: S-VSON4T (3.4x2.1)
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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TLP176D(TP,M,F) docget.jsp?did=17004&prodName=TLP176D
TLP176D(TP,M,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY MOSFET OUT 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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TLP223GA(F datasheet_en_20220202.pdf?did=140401
TLP223GA(F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 400V 6-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Produkt ist nicht verfügbar
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TK4R9E15Q5,S1X TK4R9E15Q5_datasheet_en_20240617.pdf?did=158311&prodName=TK4R9E15Q5
TK4R9E15Q5,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: 150V UMOS10-HSD TO-220 4.9MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V
auf Bestellung 132 Stücke:
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3+6.51 EUR
50+5.15 EUR
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TK115N65Z5,S1F TK115N65Z5_datasheet_en_20240215.pdf?did=157728&prodName=TK115N65Z5
TK115N65Z5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
auf Bestellung 60 Stücke:
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2+10.33 EUR
30+5.93 EUR
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TMPM366FYXBG TMPM366FxXBG_7-17-13.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 73
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TMPM366FDXBG TMPM366FxXBG_7-17-13.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 512KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, PWM, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 74
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TMPM37AFSQG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 64KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, PWM, Voltage Detect, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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RN2418,LF docget.jsp?did=18883&prodName=RN2418
RN2418,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN2418,LF docget.jsp?did=18883&prodName=RN2418
RN2418,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
124+0.14 EUR
200+0.088 EUR
500+0.064 EUR
1000+0.056 EUR
Mindestbestellmenge: 72
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RN1418,LF docget.jsp?did=18796&prodName=RN1418
RN1418,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN1418,LF docget.jsp?did=18796&prodName=RN1418
RN1418,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
124+0.14 EUR
Mindestbestellmenge: 72
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74HC00D docget.jsp?did=36764&prodName=74HC00D
74HC00D
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.22 EUR
5000+0.21 EUR
Mindestbestellmenge: 2500
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74HC00D docget.jsp?did=36764&prodName=74HC00D
74HC00D
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 7164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 34
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CMH07,LQ CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07
CMH07,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000
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CMH07,LQ CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07
CMH07,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
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TC74HC123AF TC74HC123AF_datasheet_en_20161202.pdf?did=8561&prodName=TC74HC123AF
TC74HC123AF
Hersteller: Toshiba Semiconductor and Storage
Description: SOP16 DUAL MONOSTABLE MULTIVIBRA
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 23 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOP
Voltage - Supply: 2 V ~ 6 V
Produkt ist nicht verfügbar
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TCR3LM50A,RF TCR3LM50A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM50A
TCR3LM50A,RF
Hersteller: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.14 EUR
10000+0.13 EUR
Mindestbestellmenge: 5000
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TCR3LM50A,RF TCR3LM50A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM50A
TCR3LM50A,RF
Hersteller: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
74+0.24 EUR
83+0.21 EUR
100+0.18 EUR
250+0.17 EUR
500+0.16 EUR
1000+0.15 EUR
2500+0.14 EUR
Mindestbestellmenge: 50
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7UL3G34FK,LF docget.jsp?did=147413&prodName=7UL3G34FK
7UL3G34FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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7UL3G34FK,LF docget.jsp?did=147413&prodName=7UL3G34FK
7UL3G34FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 3856 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
77+0.23 EUR
87+0.2 EUR
102+0.17 EUR
250+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 50
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2SC4738-Y,LXHF docget.jsp?did=19314&prodName=2SC4738
2SC4738-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.062 EUR
6000+0.06 EUR
Mindestbestellmenge: 3000
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2SC4738-Y,LXHF docget.jsp?did=19314&prodName=2SC4738
2SC4738-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
159+0.11 EUR
182+0.097 EUR
216+0.082 EUR
250+0.075 EUR
500+0.07 EUR
1000+0.066 EUR
Mindestbestellmenge: 112
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RN1114MFV,L3F docget.jsp?did=721&prodName=RN1114MFV
RN1114MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN1114MFV,L3F docget.jsp?did=721&prodName=RN1114MFV
RN1114MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 6394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
105+0.17 EUR
169+0.1 EUR
500+0.076 EUR
1000+0.067 EUR
2000+0.059 EUR
Mindestbestellmenge: 67
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RN2114MFV,L3F docget.jsp?did=742&prodName=RN2114MFV
RN2114MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN2114MFV,L3F docget.jsp?did=742&prodName=RN2114MFV
RN2114MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 7856 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
105+0.17 EUR
169+0.1 EUR
500+0.076 EUR
1000+0.067 EUR
2000+0.059 EUR
Mindestbestellmenge: 67
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74HC4538D 74HC4538D_datasheet_en_20170124.pdf?did=37371&prodName=74HC4538D
74HC4538D
Hersteller: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 25-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 125°C (TA)
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
55+0.32 EUR
62+0.29 EUR
100+0.25 EUR
Mindestbestellmenge: 38
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MN06ACA10T cHDD-MN-Air-Product-Overview_r7R.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 10TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MN06ACA600 cHDD-MN-Air-Product-Overview_r7R.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MN06ACA800 cHDD-MN-Air-Product-Overview_r7R.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 8TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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TLP387(TPR,E TLP387_datasheet_en_20220518.pdf?did=35919&prodName=TLP387
TLP387(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
6000+0.45 EUR
Mindestbestellmenge: 3000
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TLP387(TPR,E TLP387_datasheet_en_20220518.pdf?did=35919&prodName=TLP387
TLP387(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 8436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
20+0.89 EUR
100+0.66 EUR
500+0.55 EUR
1000+0.51 EUR
Mindestbestellmenge: 14
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TLP387(D4-TPR,E TLP387_datasheet_en_20220518.pdf?did=35919&prodName=TLP387
TLP387(D4-TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
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TLP387(D4-TPR,E TLP387_datasheet_en_20220518.pdf?did=35919&prodName=TLP387
TLP387(D4-TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
20+0.89 EUR
100+0.66 EUR
500+0.55 EUR
1000+0.51 EUR
Mindestbestellmenge: 14
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TLP387(D4,E TLP387_datasheet_en_20220518.pdf?did=35919&prodName=TLP387
TLP387(D4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
20+0.89 EUR
125+0.64 EUR
Mindestbestellmenge: 14
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TK115U65Z5,RQ TK115U65Z5_datasheet_en_20240918.pdf?did=160151&prodName=TK115U65Z5
TK115U65Z5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.71 EUR
Mindestbestellmenge: 2000
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TK115U65Z5,RQ TK115U65Z5_datasheet_en_20240918.pdf?did=160151&prodName=TK115U65Z5
TK115U65Z5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.42 EUR
10+6.31 EUR
100+4.56 EUR
500+4.54 EUR
Mindestbestellmenge: 2
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TK099N60Z1,S1F TK099N60Z1_datasheet_en_20240826.pdf?did=159763&prodName=TK099N60Z1
TK099N60Z1,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.85 EUR
30+4.41 EUR
Mindestbestellmenge: 3
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TK155U60Z1,RQ TK155U60Z1_datasheet_en_20240605.pdf?did=158309&prodName=TK155U60Z1
TK155U60Z1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.68 EUR
Mindestbestellmenge: 2000
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TK155U60Z1,RQ TK155U60Z1_datasheet_en_20240605.pdf?did=158309&prodName=TK155U60Z1
TK155U60Z1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.23 EUR
10+3.41 EUR
100+2.38 EUR
500+2.06 EUR
Mindestbestellmenge: 4
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TK125U60Z1,RQ TK125U60Z1_datasheet_en_20240605.pdf?did=158305&prodName=TK125U60Z1
TK125U60Z1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.92 EUR
Mindestbestellmenge: 2000
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TK125U60Z1,RQ TK125U60Z1_datasheet_en_20240605.pdf?did=158305&prodName=TK125U60Z1
TK125U60Z1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.79 EUR
10+3.79 EUR
100+2.65 EUR
500+2.36 EUR
Mindestbestellmenge: 4
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TK099U60Z1,RQ TK099U60Z1_datasheet_en_20240829.pdf?did=159765&prodName=TK099U60Z1
TK099U60Z1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.34 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK099U60Z1,RQ TK099U60Z1_datasheet_en_20240829.pdf?did=159765&prodName=TK099U60Z1
TK099U60Z1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.67 EUR
10+4.4 EUR
100+3.11 EUR
500+2.86 EUR
Mindestbestellmenge: 3
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TK080U60Z1,RQ TK080U60Z1_datasheet_en_20240605.pdf?did=158303&prodName=TK080U60Z1
TK080U60Z1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.81 EUR
Mindestbestellmenge: 2000
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TK080U60Z1,RQ TK080U60Z1_datasheet_en_20240605.pdf?did=158303&prodName=TK080U60Z1
TK080U60Z1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.64 EUR
10+5.08 EUR
100+3.62 EUR
500+3.44 EUR
Mindestbestellmenge: 3
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CRZ18(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ18(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
Mindestbestellmenge: 3000
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CRZ18(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ18(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 5992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
25+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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CRS05(TE85L,Q,M) CRS05_datasheet_en_20190401.pdf?did=3163&prodName=CRS05
CRS05(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 8887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
33+0.54 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 26
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TC7MBL3125CFK(EL) docget.jsp?did=57313&prodName=TC7MBL3125CFK
TC7MBL3125CFK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.48 EUR
Mindestbestellmenge: 2500
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TC7MBL3125CFK(EL) docget.jsp?did=57313&prodName=TC7MBL3125CFK
TC7MBL3125CFK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
auf Bestellung 7314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
24+0.76 EUR
26+0.68 EUR
100+0.6 EUR
250+0.56 EUR
500+0.53 EUR
1000+0.52 EUR
Mindestbestellmenge: 17
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TK20J50D(F) TK20J50D_datasheet_en_20131101.pdf?did=898&prodName=TK20J50D
TK20J50D(F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 280W
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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TCR2LN21,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN21,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN21,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN21,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
auf Bestellung 8179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
99+0.18 EUR
112+0.16 EUR
131+0.13 EUR
250+0.12 EUR
1000+0.11 EUR
2500+0.1 EUR
Mindestbestellmenge: 67
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74LVC2T45FK,LF(CT 74LVC2T45FK_datasheet_en_20230731.pdf?did=153503&prodName=74LVC2T45FK
Hersteller: Toshiba Semiconductor and Storage
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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TB67S149FG,EL docget.jsp?did=15707&prodName=TB67S149FG
TB67S149FG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.9 EUR
2000+2.83 EUR
Mindestbestellmenge: 1000
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TB67S149FG,EL docget.jsp?did=15707&prodName=TB67S149FG
TB67S149FG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
auf Bestellung 3362 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.23 EUR
10+3.93 EUR
25+3.61 EUR
100+3.25 EUR
250+3.08 EUR
500+2.98 EUR
Mindestbestellmenge: 4
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TB67S209FTG,EL TB67S209FTG_datasheet_en_20161027.pdf?did=55411&prodName=TB67S209FTG
TB67S209FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+2.5 EUR
Mindestbestellmenge: 4000
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TB67S209FTG,EL TB67S209FTG_datasheet_en_20161027.pdf?did=55411&prodName=TB67S209FTG
TB67S209FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.75 EUR
10+3.57 EUR
25+3.27 EUR
100+2.94 EUR
250+2.79 EUR
500+2.69 EUR
1000+2.61 EUR
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