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RN2107MFV,L3XHF(CT RN2107MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5884 Description: TRANS PREBIAS PNP 50V 0.1A VESM
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
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RN2107,LXHF(CT RN2107,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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3000+0.11 EUR
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RN2107,LXHF(CT RN2107,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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500+0.15 EUR
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TK125A60Z1,S4X TK125A60Z1,S4X Toshiba Semiconductor and Storage TK125A60Z1_datasheet_en_20240227.pdf?did=157161&prodName=TK125A60Z1 Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
Produkt ist nicht verfügbar
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CMH07(TE12L,Q,M) CMH07(TE12L,Q,M) Toshiba Semiconductor and Storage CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07 Description: DIODE STANDARD 200V 2A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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CMH07(TE12L,Q,M) CMH07(TE12L,Q,M) Toshiba Semiconductor and Storage CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07 Description: DIODE STANDARD 200V 2A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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2SK4037(TE12L,Q) 2SK4037(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=10418&prodName=2SK4037 Description: MOSFET N-CH PW-X
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Current Rating (Amps): 3A
Frequency: 470MHz
Configuration: N-Channel
Power - Output: 36.5dBmW
Gain: 11.5dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-70
Voltage - Rated: 12 V
Voltage - Test: 6 V
Current - Test: 250 mA
Produkt ist nicht verfügbar
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TK25S06N1L,LQ TK25S06N1L,LQ Toshiba Semiconductor and Storage docget.jsp?did=29750&prodName=TK25S06N1L Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
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TK25S06N1L,LQ TK25S06N1L,LQ Toshiba Semiconductor and Storage docget.jsp?did=29750&prodName=TK25S06N1L Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
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XCEZ5V6,L3XHF XCEZ5V6,L3XHF Toshiba Semiconductor and Storage XCEZ5V6_datasheet_en_20250418.pdf?did=162701&prodName=XCEZ5V6 Description: TVS DIODE 3.5VWM 9VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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XCEZ5V6,L3XHF XCEZ5V6,L3XHF Toshiba Semiconductor and Storage XCEZ5V6_datasheet_en_20250418.pdf?did=162701&prodName=XCEZ5V6 Description: TVS DIODE 3.5VWM 9VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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139+0.15 EUR
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CEZ5V6,H3F CEZ5V6,H3F Toshiba Semiconductor and Storage docget.jsp?did=155995&prodName=CEZ5V6 Description: 5.6 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Produkt ist nicht verfügbar
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TC4066BFELNF TC4066BFELNF Toshiba Semiconductor and Storage Description: IC BILATERAL SWITCH 1X1:1 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-SOP
Produkt ist nicht verfügbar
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TCR3LM12A,RF TCR3LM12A,RF Toshiba Semiconductor and Storage TCR3LM12A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM12A Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
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TCR3LM12A,RF TCR3LM12A,RF Toshiba Semiconductor and Storage TCR3LM12A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM12A Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
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1000+0.18 EUR
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CUZ68V,H3F CUZ68V,H3F Toshiba Semiconductor and Storage CUZ68V_datasheet_en_20250805.pdf?did=163743&prodName=CUZ68V Description: 68 V ZENER DIODE, SOD-323 SOD-32
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 60V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64V
Voltage - Clamping (Max) @ Ipp: 115V
Power - Peak Pulse: 620W
Power Line Protection: No
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CUZ68V,H3F CUZ68V,H3F Toshiba Semiconductor and Storage CUZ68V_datasheet_en_20250805.pdf?did=163743&prodName=CUZ68V Description: 68 V ZENER DIODE, SOD-323 SOD-32
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 60V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64V
Voltage - Clamping (Max) @ Ipp: 115V
Power - Peak Pulse: 620W
Power Line Protection: No
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TC74HC4538AF-ELF Toshiba Semiconductor and Storage Description: IC MMV 2-CIR 25-NS 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 14-SOP
Voltage - Supply: 2 V ~ 6 V
Produkt ist nicht verfügbar
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TCR3DM45,LF(SE TCR3DM45,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: IC REG LINEAR 4.5V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
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TCR3DM45,LF(SE TCR3DM45,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: IC REG LINEAR 4.5V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
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2SC5738(TE85L,F) Toshiba Semiconductor and Storage 2SC5738_datasheet_en_20131101.pdf?did=20747&prodName=2SC5738 Description: NPN BIPOLAR TRANSISTOR, 20 V, 3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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XSM6J372NW,LXHF XSM6J372NW,LXHF Toshiba Semiconductor and Storage XSM6J372NW_datasheet_en_20250317.pdf?did=161357&prodName=XSM6J372NW Description: P-CH MOSFET, -30 V, -6.0 A, 0.04
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Power Dissipation (Max): 1.51W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: DFN2020B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Produkt ist nicht verfügbar
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XSM6J372NW,LXHF XSM6J372NW,LXHF Toshiba Semiconductor and Storage XSM6J372NW_datasheet_en_20250317.pdf?did=161357&prodName=XSM6J372NW Description: P-CH MOSFET, -30 V, -6.0 A, 0.04
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Power Dissipation (Max): 1.51W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: DFN2020B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Produkt ist nicht verfügbar
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74HC595D 74HC595D Toshiba Semiconductor and Storage docget.jsp?did=36768&prodName=74HC595D Description: IC SR TRI-STATE 8BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
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74HC595D 74HC595D Toshiba Semiconductor and Storage docget.jsp?did=36768&prodName=74HC595D Description: IC SR TRI-STATE 8BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
auf Bestellung 7109 Stücke:
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63+0.33 EUR
71+0.3 EUR
100+0.25 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.21 EUR
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TK125E60Z1,S1X TK125E60Z1,S1X Toshiba Semiconductor and Storage TK125E60Z1_datasheet_en_20240725.pdf?did=159371&prodName=TK125E60Z1 Description: N-CH MOSFET 600 V 0.125 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
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TC74AC00FTEL Toshiba Semiconductor and Storage Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
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1000+0.23 EUR
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RN2404,LXGF RN2404,LXGF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2404 Description: PNP BIAS RESISTOR BUILT-IN TRANS
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLP768J(S,C,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP3906(F TLP3906(F Toshiba Semiconductor and Storage datasheet_en_20191222.pdf?did=15186 Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
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TK190U60Z1,RQ TK190U60Z1,RQ Toshiba Semiconductor and Storage TK190U60Z1_datasheet_en_20250730.pdf?did=162287&prodName=TK190U60Z1 Description: N-CH MOSFET 600 V 0.190 OHM TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 4000 Stücke:
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2000+2.38 EUR
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TK190U60Z1,RQ TK190U60Z1,RQ Toshiba Semiconductor and Storage TK190U60Z1_datasheet_en_20250730.pdf?did=162287&prodName=TK190U60Z1 Description: N-CH MOSFET 600 V 0.190 OHM TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
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TK190E60Z1,S1X TK190E60Z1,S1X Toshiba Semiconductor and Storage TK190E60Z1_datasheet_en_20250730.pdf?did=162283&prodName=TK190E60Z1 Description: N-CH MOSFET 600 V 0.190 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 14 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
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TTC502,LF TTC502,LF Toshiba Semiconductor and Storage docget.jsp?did=70489&prodName=TTC502 Description: TRANS NPN 120V 1A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
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TTC502,LF TTC502,LF Toshiba Semiconductor and Storage docget.jsp?did=70489&prodName=TTC502 Description: TRANS NPN 120V 1A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
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TCR3LM195A,L3F Toshiba Semiconductor and Storage Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.95V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.425V @ 200mA
Protection Features: Over Current, Over Temperature
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TCR3LM195A,L3F Toshiba Semiconductor and Storage Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.95V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.425V @ 200mA
Protection Features: Over Current, Over Temperature
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TC74HC02AFELF Toshiba Semiconductor and Storage Description: IC NOR 4-CIR 2-IN 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 1932 Stücke:
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SSM6L807R,LF SSM6L807R,LF Toshiba Semiconductor and Storage docget.jsp?did=63987&prodName=SSM6L807R Description: MOSFET N/P-CH 30V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SSM6L807R,LF SSM6L807R,LF Toshiba Semiconductor and Storage docget.jsp?did=63987&prodName=SSM6L807R Description: MOSFET N/P-CH 30V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Produkt ist nicht verfügbar
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TK155E60Z1,S1X TK155E60Z1,S1X Toshiba Semiconductor and Storage TK155E60Z1_datasheet_en_20240725.pdf?did=159373&prodName=TK155E60Z1 Description: N-CH MOSFET 600 V 0.155 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
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3+9.82 EUR
50+5.11 EUR
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TPH2R70AR5,LQ TPH2R70AR5,LQ Toshiba Semiconductor and Storage TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5 Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10000 Stücke:
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TPH2R70AR5,LQ TPH2R70AR5,LQ Toshiba Semiconductor and Storage TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5 Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10954 Stücke:
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7UL1T08NX,ELF 7UL1T08NX,ELF Toshiba Semiconductor and Storage 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
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7UL1T08NX,ELF 7UL1T08NX,ELF Toshiba Semiconductor and Storage 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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53+0.39 EUR
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101+0.21 EUR
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HDWG51JXZSTB HDWG51JXZSTB Toshiba Semiconductor and Storage Toshiba_N300Pro-SalesSheet_English-Web.pdf Description: HDD 18TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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1+990.48 EUR
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TK200V60Z1,LQ TK200V60Z1,LQ Toshiba Semiconductor and Storage TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1 Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
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2500+2.18 EUR
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TK200V60Z1,LQ TK200V60Z1,LQ Toshiba Semiconductor and Storage TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1 Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.58 EUR
10+4.28 EUR
50+3.31 EUR
100+2.99 EUR
500+2.43 EUR
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TK200U65Z5,RQ TK200U65Z5,RQ Toshiba Semiconductor and Storage TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5 Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+3.08 EUR
4000+3.03 EUR
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TK200U65Z5,RQ TK200U65Z5,RQ Toshiba Semiconductor and Storage TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5 Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.09 EUR
10+6.01 EUR
100+4.26 EUR
500+3.71 EUR
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TK200V65Z5,LQ TK200V65Z5,LQ Toshiba Semiconductor and Storage TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5 Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
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2500+4.74 EUR
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TK200V65Z5,LQ TK200V65Z5,LQ Toshiba Semiconductor and Storage TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5 Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.61 EUR
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100+6.15 EUR
500+5.8 EUR
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TK200A65Z5,S4X TK200A65Z5,S4X Toshiba Semiconductor and Storage TK200A65Z5_datasheet_en_20240408.pdf?did=158595&prodName=TK200A65Z5 Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.06 EUR
50+5.88 EUR
100+5.38 EUR
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TK200E65Z5,S1X TK200E65Z5,S1X Toshiba Semiconductor and Storage TK200E65Z5_datasheet_en_20240408.pdf?did=158599&prodName=TK200E65Z5 Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.35 EUR
50+6.05 EUR
100+5.53 EUR
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TCR5FM22A,RF TCR5FM22A,RF Toshiba Semiconductor and Storage TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
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5000+0.26 EUR
10000+0.25 EUR
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TCR5FM22A,RF TCR5FM22A,RF Toshiba Semiconductor and Storage TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
49+0.43 EUR
55+0.38 EUR
100+0.33 EUR
250+0.31 EUR
500+0.29 EUR
1000+0.27 EUR
2500+0.26 EUR
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2SA1721OTE85LF Toshiba Semiconductor and Storage Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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HDEPN20GEA51F Toshiba Semiconductor and Storage Description: 16TB SAS NEARLINE 4KN
Packaging: Bulk
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
1+1573.48 EUR
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HDEPN10GEA51F Toshiba Semiconductor and Storage Description: 16TB SAS NEARLINE 512E
Packaging: Bulk
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+1573.48 EUR
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2SK3074TE12LF 2SK3074TE12LF Toshiba Semiconductor and Storage docget.jsp?did=17914&prodName=2SK3074 Description: MOSF RF N CH 30V 1A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 630mW
Gain: 14.9dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-62
Voltage - Rated: 30 V
Voltage - Test: 9.6 V
Current - Test: 50 mA
Produkt ist nicht verfügbar
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RN2107MFV,L3XHF(CT docget.jsp?did=5884
RN2107MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
Mindestbestellmenge: 44 Stücke
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RN2107,LXHF(CT docget.jsp?did=18845&prodName=RN2108
RN2107,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.11 EUR
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RN2107,LXHF(CT docget.jsp?did=18845&prodName=RN2108
RN2107,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 5870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
65+0.32 EUR
104+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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TK125A60Z1,S4X TK125A60Z1_datasheet_en_20240227.pdf?did=157161&prodName=TK125A60Z1
TK125A60Z1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
Produkt ist nicht verfügbar
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CMH07(TE12L,Q,M) CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07
CMH07(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 2A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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CMH07(TE12L,Q,M) CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07
CMH07(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 2A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2355 Stücke:
Lieferzeit 10-14 Tag (e)
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15+1.44 EUR
25+0.87 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.4 EUR
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2SK4037(TE12L,Q) docget.jsp?did=10418&prodName=2SK4037
2SK4037(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PW-X
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Current Rating (Amps): 3A
Frequency: 470MHz
Configuration: N-Channel
Power - Output: 36.5dBmW
Gain: 11.5dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-70
Voltage - Rated: 12 V
Voltage - Test: 6 V
Current - Test: 250 mA
Produkt ist nicht verfügbar
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TK25S06N1L,LQ docget.jsp?did=29750&prodName=TK25S06N1L
TK25S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.74 EUR
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TK25S06N1L,LQ docget.jsp?did=29750&prodName=TK25S06N1L
TK25S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
auf Bestellung 3058 Stücke:
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AnzahlPrivatkunde
8+2.75 EUR
13+1.75 EUR
100+1.17 EUR
500+0.92 EUR
1000+0.83 EUR
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XCEZ5V6,L3XHF XCEZ5V6_datasheet_en_20250418.pdf?did=162701&prodName=XCEZ5V6
XCEZ5V6,L3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM 9VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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XCEZ5V6,L3XHF XCEZ5V6_datasheet_en_20250418.pdf?did=162701&prodName=XCEZ5V6
XCEZ5V6,L3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM 9VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
87+0.24 EUR
121+0.18 EUR
139+0.15 EUR
500+0.11 EUR
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CEZ5V6,H3F docget.jsp?did=155995&prodName=CEZ5V6
CEZ5V6,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: 5.6 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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TC4066BFELNF
TC4066BFELNF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BILATERAL SWITCH 1X1:1 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-SOP
Produkt ist nicht verfügbar
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TCR3LM12A,RF TCR3LM12A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM12A
TCR3LM12A,RF
Hersteller: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.17 EUR
10000+0.15 EUR
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TCR3LM12A,RF TCR3LM12A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM12A
TCR3LM12A,RF
Hersteller: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
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50+0.42 EUR
74+0.29 EUR
84+0.25 EUR
100+0.21 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
2500+0.17 EUR
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CUZ68V,H3F CUZ68V_datasheet_en_20250805.pdf?did=163743&prodName=CUZ68V
CUZ68V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: 68 V ZENER DIODE, SOD-323 SOD-32
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 60V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64V
Voltage - Clamping (Max) @ Ipp: 115V
Power - Peak Pulse: 620W
Power Line Protection: No
auf Bestellung 3000 Stücke:
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3000+0.052 EUR
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CUZ68V,H3F CUZ68V_datasheet_en_20250805.pdf?did=163743&prodName=CUZ68V
CUZ68V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: 68 V ZENER DIODE, SOD-323 SOD-32
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 60V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64V
Voltage - Clamping (Max) @ Ipp: 115V
Power - Peak Pulse: 620W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
125+0.17 EUR
218+0.096 EUR
250+0.083 EUR
298+0.07 EUR
329+0.064 EUR
500+0.06 EUR
1000+0.056 EUR
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TC74HC4538AF-ELF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 25-NS 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 14-SOP
Voltage - Supply: 2 V ~ 6 V
Produkt ist nicht verfügbar
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TCR3DM45,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM45,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 30000 Stücke:
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10000+0.14 EUR
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TCR3DM45,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM45,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 30000 Stücke:
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56+0.38 EUR
82+0.25 EUR
93+0.23 EUR
109+0.19 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
5000+0.14 EUR
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2SC5738(TE85L,F) 2SC5738_datasheet_en_20131101.pdf?did=20747&prodName=2SC5738
Hersteller: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR, 20 V, 3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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XSM6J372NW,LXHF XSM6J372NW_datasheet_en_20250317.pdf?did=161357&prodName=XSM6J372NW
XSM6J372NW,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: P-CH MOSFET, -30 V, -6.0 A, 0.04
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Power Dissipation (Max): 1.51W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: DFN2020B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Produkt ist nicht verfügbar
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XSM6J372NW,LXHF XSM6J372NW_datasheet_en_20250317.pdf?did=161357&prodName=XSM6J372NW
XSM6J372NW,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: P-CH MOSFET, -30 V, -6.0 A, 0.04
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Power Dissipation (Max): 1.51W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: DFN2020B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Produkt ist nicht verfügbar
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74HC595D docget.jsp?did=36768&prodName=74HC595D
74HC595D
Hersteller: Toshiba Semiconductor and Storage
Description: IC SR TRI-STATE 8BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
auf Bestellung 6688 Stücke:
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2500+0.2 EUR
5000+0.19 EUR
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74HC595D docget.jsp?did=36768&prodName=74HC595D
74HC595D
Hersteller: Toshiba Semiconductor and Storage
Description: IC SR TRI-STATE 8BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
auf Bestellung 7109 Stücke:
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42+0.5 EUR
63+0.33 EUR
71+0.3 EUR
100+0.25 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.21 EUR
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TK125E60Z1,S1X TK125E60Z1_datasheet_en_20240725.pdf?did=159371&prodName=TK125E60Z1
TK125E60Z1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.125 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
auf Bestellung 100 Stücke:
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3+8 EUR
10+5.26 EUR
50+4.08 EUR
100+3.7 EUR
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TC74AC00FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
auf Bestellung 1734 Stücke:
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40+0.52 EUR
58+0.37 EUR
65+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
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RN2404,LXGF docget.jsp?did=18874&prodName=RN2404
RN2404,LXGF
Hersteller: Toshiba Semiconductor and Storage
Description: PNP BIAS RESISTOR BUILT-IN TRANS
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLP768J(S,C,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP3906(F datasheet_en_20191222.pdf?did=15186
TLP3906(F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
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TK190U60Z1,RQ TK190U60Z1_datasheet_en_20250730.pdf?did=162287&prodName=TK190U60Z1
TK190U60Z1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.190 OHM TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 4000 Stücke:
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2000+2.38 EUR
4000+2.26 EUR
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TK190U60Z1,RQ TK190U60Z1_datasheet_en_20250730.pdf?did=162287&prodName=TK190U60Z1
TK190U60Z1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.190 OHM TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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3+7.33 EUR
10+4.8 EUR
100+3.36 EUR
500+2.77 EUR
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TK190E60Z1,S1X TK190E60Z1_datasheet_en_20250730.pdf?did=162283&prodName=TK190E60Z1
TK190E60Z1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.190 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 14 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 100 Stücke:
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4+5.97 EUR
10+4.49 EUR
50+3.89 EUR
100+3.7 EUR
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TTC502,LF docget.jsp?did=70489&prodName=TTC502
TTC502,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 1A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.19 EUR
6000+0.17 EUR
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TTC502,LF docget.jsp?did=70489&prodName=TTC502
TTC502,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 1A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
auf Bestellung 6664 Stücke:
Lieferzeit 10-14 Tag (e)
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24+0.88 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
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TCR3LM195A,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.95V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.425V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.17 EUR
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TCR3LM195A,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.95V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.425V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
71+0.3 EUR
80+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
2500+0.18 EUR
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TC74HC02AFELF
Hersteller: Toshiba Semiconductor and Storage
Description: IC NOR 4-CIR 2-IN 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 1932 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.21 EUR
25+0.87 EUR
28+0.77 EUR
100+0.68 EUR
250+0.63 EUR
500+0.61 EUR
1000+0.6 EUR
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SSM6L807R,LF docget.jsp?did=63987&prodName=SSM6L807R
SSM6L807R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Produkt ist nicht verfügbar
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SSM6L807R,LF docget.jsp?did=63987&prodName=SSM6L807R
SSM6L807R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Produkt ist nicht verfügbar
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TK155E60Z1,S1X TK155E60Z1_datasheet_en_20240725.pdf?did=159373&prodName=TK155E60Z1
TK155E60Z1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.155 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.82 EUR
50+5.11 EUR
100+4.65 EUR
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TPH2R70AR5,LQ TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5
TPH2R70AR5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.64 EUR
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TPH2R70AR5,LQ TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5
TPH2R70AR5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10954 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.74 EUR
10+3.72 EUR
100+2.57 EUR
500+2.08 EUR
1000+2 EUR
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7UL1T08NX,ELF 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX
7UL1T08NX,ELF
Hersteller: Toshiba Semiconductor and Storage
Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.15 EUR
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7UL1T08NX,ELF 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX
7UL1T08NX,ELF
Hersteller: Toshiba Semiconductor and Storage
Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
76+0.27 EUR
86+0.25 EUR
101+0.21 EUR
250+0.19 EUR
500+0.18 EUR
2500+0.17 EUR
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HDWG51JXZSTB Toshiba_N300Pro-SalesSheet_English-Web.pdf
HDWG51JXZSTB
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
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1+990.48 EUR
10+897.95 EUR
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TK200V60Z1,LQ TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1
TK200V60Z1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.18 EUR
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TK200V60Z1,LQ TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1
TK200V60Z1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.58 EUR
10+4.28 EUR
50+3.31 EUR
100+2.99 EUR
500+2.43 EUR
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TK200U65Z5,RQ TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5
TK200U65Z5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+3.08 EUR
4000+3.03 EUR
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TK200U65Z5,RQ TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5
TK200U65Z5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.09 EUR
10+6.01 EUR
100+4.26 EUR
500+3.71 EUR
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TK200V65Z5,LQ TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5
TK200V65Z5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.74 EUR
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TK200V65Z5,LQ TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5
TK200V65Z5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.61 EUR
10+8.5 EUR
100+6.15 EUR
500+5.8 EUR
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TK200A65Z5,S4X TK200A65Z5_datasheet_en_20240408.pdf?did=158595&prodName=TK200A65Z5
TK200A65Z5,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.06 EUR
50+5.88 EUR
100+5.38 EUR
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TK200E65Z5,S1X TK200E65Z5_datasheet_en_20240408.pdf?did=158599&prodName=TK200E65Z5
TK200E65Z5,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.35 EUR
50+6.05 EUR
100+5.53 EUR
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TCR5FM22A,RF TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A
TCR5FM22A,RF
Hersteller: Toshiba Semiconductor and Storage
Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.26 EUR
10000+0.25 EUR
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TCR5FM22A,RF TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A
TCR5FM22A,RF
Hersteller: Toshiba Semiconductor and Storage
Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
49+0.43 EUR
55+0.38 EUR
100+0.33 EUR
250+0.31 EUR
500+0.29 EUR
1000+0.27 EUR
2500+0.26 EUR
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2SA1721OTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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HDEPN20GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 16TB SAS NEARLINE 4KN
Packaging: Bulk
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1573.48 EUR
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HDEPN10GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 16TB SAS NEARLINE 512E
Packaging: Bulk
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1573.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
2SK3074TE12LF docget.jsp?did=17914&prodName=2SK3074
2SK3074TE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 30V 1A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 630mW
Gain: 14.9dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-62
Voltage - Rated: 30 V
Voltage - Test: 9.6 V
Current - Test: 50 mA
Produkt ist nicht verfügbar
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