Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13523) > Seite 221 nach 226

Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 154 176 198 216 217 218 219 220 221 222 223 224 225 226  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TLP241BPF(D4,E TLP241BPF(D4,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP241BP(E TLP241BP(E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP241BPF(E TLP241BPF(E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP241BPF(LF4,E TLP241BPF(LF4,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-SMD
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Surface Mount
Output Type: DC
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP785(D4-GRH,F Toshiba Semiconductor and Storage TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785 Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H620FNG TC78H620FNG Toshiba Semiconductor and Storage TC78H620FNG_datasheet_en_20161125.pdf?did=35802&prodName=TC78H620FNG Description: IC MTRDRV UNIPLR 2.7-5.5V 16SSOP
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Step Resolution: 1, 1/2
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Unipolar
Supplier Device Package: 16-SSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2409,LF RN2409,LF Toshiba Semiconductor and Storage RN2407-9.pdf Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.064 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2409,LF RN2409,LF Toshiba Semiconductor and Storage RN2407-9.pdf Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
106+0.2 EUR
172+0.12 EUR
500+0.089 EUR
1000+0.077 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TMPM369FDFG TMPM369FDFG Toshiba Semiconductor and Storage TMPM369FDFG_datasheet_en_20230721.pdf?did=13802&prodName=TMPM369FDFG Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-FQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, Microwire, SIO, SPI, SSP, UART/USART, USB
Peripherals: DMA, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.03 EUR
10+14.93 EUR
25+13.92 EUR
200+12.17 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6P56FE,LM Toshiba Semiconductor and Storage Description: MOSFET 2P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R408QM,LQ TPH2R408QM,LQ Toshiba Semiconductor and Storage Description: 80V U-MOS X-H SOP-ADVANCE(N) 2.4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R008QM,LQ TPH3R008QM,LQ Toshiba Semiconductor and Storage datasheet_en_20221125.pdf?did=143627 Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.04 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R008QM,LQ TPH3R008QM,LQ Toshiba Semiconductor and Storage datasheet_en_20221125.pdf?did=143627 Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
auf Bestellung 14688 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.86 EUR
10+2.45 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.26 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R008NH1,LQ TPH4R008NH1,LQ Toshiba Semiconductor and Storage Description: 80V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1104MFV,L3F(CT RN1104MFV,L3F(CT Toshiba Semiconductor and Storage RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.051 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1104MFV,L3F(CT RN1104MFV,L3F(CT Toshiba Semiconductor and Storage RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 23791 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
113+0.19 EUR
182+0.12 EUR
500+0.083 EUR
1000+0.074 EUR
2000+0.064 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1104MFV,L3XHF(CT RN1104MFV,L3XHF(CT Toshiba Semiconductor and Storage RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.092 EUR
16000+0.083 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1104MFV,L3XHF(CT RN1104MFV,L3XHF(CT Toshiba Semiconductor and Storage RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.32 EUR
107+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2104MFV,L3XHF(CT RN2104MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2104MFV,L3XHF(CT RN2104MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 7725 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.32 EUR
107+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3640A(TPL,E TLP3640A(TPL,E Toshiba Semiconductor and Storage TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.57 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3640A(TPL,E TLP3640A(TPL,E Toshiba Semiconductor and Storage TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 3696 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.74 EUR
10+4.19 EUR
100+3.26 EUR
500+2.86 EUR
1000+2.71 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3640A(V4TPL,E TLP3640A(V4TPL,E Toshiba Semiconductor and Storage TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.57 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3640A(V4TPL,E TLP3640A(V4TPL,E Toshiba Semiconductor and Storage TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 4149 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.74 EUR
10+4.19 EUR
100+3.26 EUR
500+2.86 EUR
1000+2.71 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1111,LXHF(CT RN1111,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18754&prodName=RN1111 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Resistors Included: R1 Only
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1111,LXHF(CT RN1111,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18754&prodName=RN1111 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Resistors Included: R1 Only
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
auf Bestellung 5470 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
61+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74HC00AFELF TC74HC00AFELF Toshiba Semiconductor and Storage TC74HC00AF_datasheet_en_20140301.pdf?did=6954&prodName=TC74HC00AF Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 1822 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
40+0.52 EUR
45+0.46 EUR
100+0.4 EUR
250+0.37 EUR
500+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1905FE,LXHF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1905FE,LXHF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 2934 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
44+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2905FE,LXHF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2905FE,LXHF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.77 EUR
45+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2EF25,LM(CT TCR2EF25,LM(CT Toshiba Semiconductor and Storage TCR2EF25_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF25 Description: IC REG LINEAR 2.5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.083 EUR
6000+0.081 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3414S(TP,E Toshiba Semiconductor and Storage Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3414S(TP,E Toshiba Semiconductor and Storage Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
auf Bestellung 1891 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.7 EUR
10+8.02 EUR
100+6.44 EUR
500+5.75 EUR
1000+5.6 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CRG09A,LQ(M CRG09A,LQ(M Toshiba Semiconductor and Storage CRG09A_datasheet_en_20190709.pdf?did=63646&prodName=CRG09A Description: DIODE STANDARD 400V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK024N60Z1,S1F TK024N60Z1,S1F Toshiba Semiconductor and Storage TK024N60Z1_datasheet_en_20240522.pdf?did=158083&prodName=TK024N60Z1 Description: N-CH MOSFET 600V 0.024OHM 10V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 33A, 10V
Power Dissipation (Max): 506W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.84mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 300 V
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.66 EUR
50+14.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
XCUZ18V,H3XHF(B XCUZ18V,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ18V Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.074 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XCUZ18V,H3XHF(B XCUZ18V,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ18V Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
7UL1G00NX,ELF Toshiba Semiconductor and Storage Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
7UL1G00NX,ELF Toshiba Semiconductor and Storage Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS30N120HB,S1Q TRS30N120HB,S1Q Toshiba Semiconductor and Storage TRS30N120HB_datasheet_en_20240612.pdf?did=158285&prodName=TRS30N120HB Description: 1200V30A SIC SCHOTTKY BARR DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 41A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.02 EUR
30+17.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DCM341A01(AS,EL) DCM341A01(AS,EL) Toshiba Semiconductor and Storage standard-digital-isolators.html Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DCM341A01(AS,EL) DCM341A01(AS,EL) Toshiba Semiconductor and Storage standard-digital-isolators.html Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1492 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.97 EUR
10+4.49 EUR
25+4.11 EUR
100+3.7 EUR
250+3.51 EUR
500+3.39 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74VCX164245ELF TC74VCX164245ELF Toshiba Semiconductor and Storage Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 48-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBD62503AFG,EL TBD62503AFG,EL Toshiba Semiconductor and Storage TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+2.03 EUR
4000+1.99 EUR
6000+1.96 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBD62503AFG,EL TBD62503AFG,EL Toshiba Semiconductor and Storage TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 21624 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.94 EUR
10+2.9 EUR
25+2.65 EUR
100+2.37 EUR
250+2.24 EUR
500+2.17 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBD62503AFWG,EL TBD62503AFWG,EL Toshiba Semiconductor and Storage TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.3 EUR
4000+1.26 EUR
6000+1.25 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBD62503AFWG,EL TBD62503AFWG,EL Toshiba Semiconductor and Storage TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 7949 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.59 EUR
12+1.89 EUR
25+1.73 EUR
100+1.52 EUR
250+1.43 EUR
500+1.38 EUR
1000+1.36 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74VCX16245(EL,F) TC74VCX16245(EL,F) Toshiba Semiconductor and Storage docget.jsp?did=69808&prodName=TC74VCX16245 Description: 16-BIT TRANSCEIVER, TSSOP48
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1SS361FV,L3XGF 1SS361FV,L3XGF Toshiba Semiconductor and Storage docget.jsp?did=4394&prodName=1SS361FV Description: 80V/0.1 A SWITCHING DIODE, SOT-7
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: VESM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLX9910(TPL,F TLX9910(TPL,F Toshiba Semiconductor and Storage TLX9910_datasheet_en_20230920.pdf?did=154287&prodName=TLX9910 Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Qualification: AEC-Q101
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 1
Grade: Automotive
Turn On / Turn Off Time (Typ): 100µs, 500µs
Voltage - Output (Max): 13.5V
Supplier Device Package: 6-SOP
Voltage - Isolation: 3750Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLX9910(TPL,F TLX9910(TPL,F Toshiba Semiconductor and Storage TLX9910_datasheet_en_20230920.pdf?did=154287&prodName=TLX9910 Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -40°C ~ 125°C
Qualification: AEC-Q101
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 1
Grade: Automotive
Turn On / Turn Off Time (Typ): 100µs, 500µs
Voltage - Output (Max): 13.5V
Supplier Device Package: 6-SOP
Voltage - Isolation: 3750Vrms
Input Type: DC
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Cut Tape (CT)
auf Bestellung 2011 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.09 EUR
10+6.75 EUR
100+5.37 EUR
500+4.76 EUR
1000+4.56 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CMZ12(TE12L,Q,M) CMZ12(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12 Description: DIODE ZENER 12V 2W MFLAT
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: M-FLAT (2.4x3.8)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±10%
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
6000+0.31 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CMZ12(TE12L,Q,M) CMZ12(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12 Description: DIODE ZENER 12V 2W MFLAT
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: M-FLAT (2.4x3.8)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±10%
Packaging: Cut Tape (CT)
auf Bestellung 10208 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.13 EUR
28+0.77 EUR
100+0.52 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67S539SFTG(EL) TB67S539SFTG(EL) Toshiba Semiconductor and Storage TB67S539SFTG_datasheet_en_20241121.pdf?did=143442&prodName=TB67S539SFTG Description: 40V/2A 32 MICRO-STEP STEPPING MO
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DCM341B01(AS,EL) DCM341B01(AS,EL) Toshiba Semiconductor and Storage Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+3.5 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DCM341B01(AS,EL) DCM341B01(AS,EL) Toshiba Semiconductor and Storage Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.43 EUR
10+4.83 EUR
25+4.43 EUR
100+3.99 EUR
250+3.77 EUR
500+3.65 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DCM341L01(AS,EL) DCM341L01(AS,EL) Toshiba Semiconductor and Storage standard-digital-isolators.html Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DCM341L01(AS,EL) DCM341L01(AS,EL) Toshiba Semiconductor and Storage standard-digital-isolators.html Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1495 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.31 EUR
10+4.72 EUR
25+4.33 EUR
100+3.9 EUR
250+3.7 EUR
500+3.65 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR3UF08A,LM TCR3UF08A,LM Toshiba Semiconductor and Storage docget.jsp?did=68764&prodName=TCR3UF08A Description: 300 MA FIXED OUTPUT LDO REGULATO
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP241BPF(D4,E
TLP241BPF(D4,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP241BP(E
TLP241BP(E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP241BPF(E
TLP241BPF(E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-DIP
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: PC Pin
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP241BPF(LF4,E
TLP241BPF(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
On-State Resistance (Max): 280 mOhms
Voltage - Load: 0 V ~ 80 V
Supplier Device Package: 4-SMD
Approval Agency: cUR, UR, VDE
Load Current: 1.4 A
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 110°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.65VDC
Mounting Type: Surface Mount
Output Type: DC
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP785(D4-GRH,F TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H620FNG TC78H620FNG_datasheet_en_20161125.pdf?did=35802&prodName=TC78H620FNG
TC78H620FNG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTRDRV UNIPLR 2.7-5.5V 16SSOP
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Step Resolution: 1, 1/2
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Unipolar
Supplier Device Package: 16-SSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2409,LF RN2407-9.pdf
RN2409,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.064 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2409,LF RN2407-9.pdf
RN2409,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
106+0.2 EUR
172+0.12 EUR
500+0.089 EUR
1000+0.077 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TMPM369FDFG TMPM369FDFG_datasheet_en_20230721.pdf?did=13802&prodName=TMPM369FDFG
TMPM369FDFG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-FQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, Microwire, SIO, SPI, SSP, UART/USART, USB
Peripherals: DMA, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.03 EUR
10+14.93 EUR
25+13.92 EUR
200+12.17 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6P56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R408QM,LQ
TPH2R408QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V U-MOS X-H SOP-ADVANCE(N) 2.4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R008QM,LQ datasheet_en_20221125.pdf?did=143627
TPH3R008QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.04 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R008QM,LQ datasheet_en_20221125.pdf?did=143627
TPH3R008QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
auf Bestellung 14688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.86 EUR
10+2.45 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.26 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R008NH1,LQ
TPH4R008NH1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1104MFV,L3F(CT RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV
RN1104MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.051 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1104MFV,L3F(CT RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV
RN1104MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 23791 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
113+0.19 EUR
182+0.12 EUR
500+0.083 EUR
1000+0.074 EUR
2000+0.064 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1104MFV,L3XHF(CT RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV
RN1104MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.092 EUR
16000+0.083 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1104MFV,L3XHF(CT RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV
RN1104MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
67+0.32 EUR
107+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2104MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false
RN2104MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2104MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false
RN2104MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 7725 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
67+0.32 EUR
107+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3640A(TPL,E TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A
TLP3640A(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.57 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3640A(TPL,E TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A
TLP3640A(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 3696 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.74 EUR
10+4.19 EUR
100+3.26 EUR
500+2.86 EUR
1000+2.71 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3640A(V4TPL,E TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A
TLP3640A(V4TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.57 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3640A(V4TPL,E TLP3640A_datasheet_en_20240926.pdf?did=159803&prodName=TLP3640A
TLP3640A(V4TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 4149 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.74 EUR
10+4.19 EUR
100+3.26 EUR
500+2.86 EUR
1000+2.71 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1111,LXHF(CT docget.jsp?did=18754&prodName=RN1111
RN1111,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Resistors Included: R1 Only
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1111,LXHF(CT docget.jsp?did=18754&prodName=RN1111
RN1111,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Resistors Included: R1 Only
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
auf Bestellung 5470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
61+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74HC00AFELF TC74HC00AF_datasheet_en_20140301.pdf?did=6954&prodName=TC74HC00AF
TC74HC00AFELF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 1822 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
40+0.52 EUR
45+0.46 EUR
100+0.4 EUR
250+0.37 EUR
500+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1905FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1905FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 2934 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
44+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2905FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2905FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
45+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2EF25,LM(CT TCR2EF25_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF25
TCR2EF25,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.083 EUR
6000+0.081 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3414S(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP3414S(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
auf Bestellung 1891 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.7 EUR
10+8.02 EUR
100+6.44 EUR
500+5.75 EUR
1000+5.6 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CRG09A,LQ(M CRG09A_datasheet_en_20190709.pdf?did=63646&prodName=CRG09A
CRG09A,LQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 400V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK024N60Z1,S1F TK024N60Z1_datasheet_en_20240522.pdf?did=158083&prodName=TK024N60Z1
TK024N60Z1,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600V 0.024OHM 10V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 33A, 10V
Power Dissipation (Max): 506W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.84mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 300 V
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+25.66 EUR
50+14.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
XCUZ18V,H3XHF(B docget.jsp?did=153645&prodName=XCUZ18V
XCUZ18V,H3XHF(B
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.074 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XCUZ18V,H3XHF(B docget.jsp?did=153645&prodName=XCUZ18V
XCUZ18V,H3XHF(B
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
7UL1G00NX,ELF
Hersteller: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
7UL1G00NX,ELF
Hersteller: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS30N120HB,S1Q TRS30N120HB_datasheet_en_20240612.pdf?did=158285&prodName=TRS30N120HB
TRS30N120HB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: 1200V30A SIC SCHOTTKY BARR DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 41A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+28.02 EUR
30+17.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DCM341A01(AS,EL) standard-digital-isolators.html
DCM341A01(AS,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DCM341A01(AS,EL) standard-digital-isolators.html
DCM341A01(AS,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1492 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.97 EUR
10+4.49 EUR
25+4.11 EUR
100+3.7 EUR
250+3.51 EUR
500+3.39 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74VCX164245ELF
TC74VCX164245ELF
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 48-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBD62503AFG,EL TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG
TBD62503AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+2.03 EUR
4000+1.99 EUR
6000+1.96 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBD62503AFG,EL TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG
TBD62503AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 21624 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.94 EUR
10+2.9 EUR
25+2.65 EUR
100+2.37 EUR
250+2.24 EUR
500+2.17 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBD62503AFWG,EL TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG
TBD62503AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.3 EUR
4000+1.26 EUR
6000+1.25 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBD62503AFWG,EL TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG
TBD62503AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 7949 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
12+1.89 EUR
25+1.73 EUR
100+1.52 EUR
250+1.43 EUR
500+1.38 EUR
1000+1.36 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC74VCX16245(EL,F) docget.jsp?did=69808&prodName=TC74VCX16245
TC74VCX16245(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: 16-BIT TRANSCEIVER, TSSOP48
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1SS361FV,L3XGF docget.jsp?did=4394&prodName=1SS361FV
1SS361FV,L3XGF
Hersteller: Toshiba Semiconductor and Storage
Description: 80V/0.1 A SWITCHING DIODE, SOT-7
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: VESM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLX9910(TPL,F TLX9910_datasheet_en_20230920.pdf?did=154287&prodName=TLX9910
TLX9910(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Qualification: AEC-Q101
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 1
Grade: Automotive
Turn On / Turn Off Time (Typ): 100µs, 500µs
Voltage - Output (Max): 13.5V
Supplier Device Package: 6-SOP
Voltage - Isolation: 3750Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLX9910(TPL,F TLX9910_datasheet_en_20230920.pdf?did=154287&prodName=TLX9910
TLX9910(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -40°C ~ 125°C
Qualification: AEC-Q101
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 1
Grade: Automotive
Turn On / Turn Off Time (Typ): 100µs, 500µs
Voltage - Output (Max): 13.5V
Supplier Device Package: 6-SOP
Voltage - Isolation: 3750Vrms
Input Type: DC
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Cut Tape (CT)
auf Bestellung 2011 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.09 EUR
10+6.75 EUR
100+5.37 EUR
500+4.76 EUR
1000+4.56 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CMZ12(TE12L,Q,M) CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12
CMZ12(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 12V 2W MFLAT
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: M-FLAT (2.4x3.8)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±10%
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
6000+0.31 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CMZ12(TE12L,Q,M) CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12
CMZ12(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 12V 2W MFLAT
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: M-FLAT (2.4x3.8)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±10%
Packaging: Cut Tape (CT)
auf Bestellung 10208 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.13 EUR
28+0.77 EUR
100+0.52 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67S539SFTG(EL) TB67S539SFTG_datasheet_en_20241121.pdf?did=143442&prodName=TB67S539SFTG
TB67S539SFTG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: 40V/2A 32 MICRO-STEP STEPPING MO
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DCM341B01(AS,EL)
DCM341B01(AS,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+3.5 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DCM341B01(AS,EL)
DCM341B01(AS,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.43 EUR
10+4.83 EUR
25+4.43 EUR
100+3.99 EUR
250+3.77 EUR
500+3.65 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DCM341L01(AS,EL) standard-digital-isolators.html
DCM341L01(AS,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DCM341L01(AS,EL) standard-digital-isolators.html
DCM341L01(AS,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1495 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.31 EUR
10+4.72 EUR
25+4.33 EUR
100+3.9 EUR
250+3.7 EUR
500+3.65 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR3UF08A,LM docget.jsp?did=68764&prodName=TCR3UF08A
TCR3UF08A,LM
Hersteller: Toshiba Semiconductor and Storage
Description: 300 MA FIXED OUTPUT LDO REGULATO
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 154 176 198 216 217 218 219 220 221 222 223 224 225 226  [ Nächste Seite >> ]