Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13435) > Seite 218 nach 224

Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 154 176 198 213 214 215 216 217 218 219 220 221 222 223 224  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TC74HC540AF(EL,F) Toshiba Semiconductor and Storage TC74HC540AF_datasheet_en_20140301.pdf?did=16401&prodName=TC74HC540AF Description: IC BUFFER INVERT 6V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRG09(TE85L,Q,M) CRG09(TE85L,Q,M) Toshiba Semiconductor and Storage CRG09_datasheet_en_20131101.pdf?did=6239&prodName=CRG09 Description: DIODE GEN PURP 400V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MKZ12V,LM(B MKZ12V,LM(B Toshiba Semiconductor and Storage Description: 12V ZENER DIODE, SOT23 PD (MAX):
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 44pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MKZ12V,LM(B MKZ12V,LM(B Toshiba Semiconductor and Storage Description: 12V ZENER DIODE, SOT23 PD (MAX):
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 44pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 5872 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
91+0.19 EUR
113+0.16 EUR
154+0.11 EUR
250+0.09 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE,LXHF(CT RN2904FE,LXHF(CT Toshiba Semiconductor and Storage RN2904FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2904FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.12 EUR
8000+0.11 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE,LXHF(CT RN2904FE,LXHF(CT Toshiba Semiconductor and Storage RN2904FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2904FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE,LF RN2904FE,LF Toshiba Semiconductor and Storage RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.07 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE,LF RN2904FE,LF Toshiba Semiconductor and Storage RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
61+0.29 EUR
125+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
XCUZ15V,H3XHF(B XCUZ15V,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ30V Description: 15 V ZENER DIODEAEC-Q, SOD-323(U
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 36pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 24V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
XCUZ15V,H3XHF(B XCUZ15V,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ30V Description: 15 V ZENER DIODEAEC-Q, SOD-323(U
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 36pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 24V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
77+0.23 EUR
156+0.11 EUR
500+0.09 EUR
1000+0.07 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
CRS15I40A(TE85L,QM CRS15I40A(TE85L,QM Toshiba Semiconductor and Storage CRS15I40A_datasheet_en_20140328.pdf?did=15094&prodName=CRS15I40A Description: DIODE SCHOTTKY 40V 1.5A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS15I40A(TE85L,QM CRS15I40A(TE85L,QM Toshiba Semiconductor and Storage CRS15I40A_datasheet_en_20140328.pdf?did=15094&prodName=CRS15I40A Description: DIODE SCHOTTKY 40V 1.5A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
30+0.59 EUR
100+0.38 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
2SK3798(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=1724&prodName=2SK3798 Description: POWER MOSFET TRANSISTOR TO-220(S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRS14(TE85L,Q,M) CRS14(TE85L,Q,M) Toshiba Semiconductor and Storage CRS14_datasheet_en_20181115.pdf?did=22737&prodName=CRS14 Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRZ24(TE85L,Q,M) CRZ24(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 24V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 17 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I30B(TE85L,QM CRS10I30B(TE85L,QM Toshiba Semiconductor and Storage CRS10I30B_datasheet_en_20181115.pdf?did=2128&prodName=CRS10I30B Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I30B(TE85L,QM CRS10I30B(TE85L,QM Toshiba Semiconductor and Storage CRS10I30B_datasheet_en_20181115.pdf?did=2128&prodName=CRS10I30B Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
auf Bestellung 2730 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
39+0.45 EUR
100+0.23 EUR
500+0.20 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I40B(TE85L,QM CRS10I40B(TE85L,QM Toshiba Semiconductor and Storage CRS10I40B_datasheet_en_20201014.pdf?did=14633&prodName=CRS10I40B Description: DIODE SCHOTTKY 40V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I40B(TE85L,QM CRS10I40B(TE85L,QM Toshiba Semiconductor and Storage CRS10I40B_datasheet_en_20201014.pdf?did=14633&prodName=CRS10I40B Description: DIODE SCHOTTKY 40V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 4863 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
30+0.60 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
CRG05(TE85L,Q,M) CRG05(TE85L,Q,M) Toshiba Semiconductor and Storage Description: DIODE GEN PURP 800V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRG05(TE85L,Q,M) CRG05(TE85L,Q,M) Toshiba Semiconductor and Storage Description: DIODE GEN PURP 800V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I40A(TE85L,QM CRS10I40A(TE85L,QM Toshiba Semiconductor and Storage CRS10I40A_datasheet_en_20220526.pdf?did=14631&prodName=CRS10I40A Description: DIODE GEN PURP 40V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I40A(TE85L,QM CRS10I40A(TE85L,QM Toshiba Semiconductor and Storage CRS10I40A_datasheet_en_20220526.pdf?did=14631&prodName=CRS10I40A Description: DIODE GEN PURP 40V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 2799 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
32+0.56 EUR
100+0.34 EUR
500+0.31 EUR
1000+0.21 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CRF02(TE85L,Q,M) CRF02(TE85L,Q,M) Toshiba Semiconductor and Storage Description: DIODE GEN PURP 800V 500MA S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRF02(TE85L,Q,M) CRF02(TE85L,Q,M) Toshiba Semiconductor and Storage Description: DIODE GEN PURP 800V 500MA S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
auf Bestellung 2698 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+0.57 EUR
100+0.34 EUR
500+0.32 EUR
1000+0.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
CRZ30(TE85L,Q,M) CRZ30(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 30V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 21 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRZ30(TE85L,Q,M) CRZ30(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 30V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 21 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRZ10(TE85L,Q,M) CRZ10(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 10V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ10(TE85L,Q,M) CRZ10(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 10V 700MW SFLAT
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRZ13(TE85L,Q,M) CRZ13(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 13V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ13(TE85L,Q,M) CRZ13(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 13V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRZ27(TE85L,Q,M) CRZ27(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 27V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ27(TE85L,Q,M) CRZ27(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 27V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRZ20(TE85L,Q,M) CRZ20(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 20V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 14 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ20(TE85L,Q,M) CRZ20(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 20V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 14 V
auf Bestellung 2830 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRY68(TE85L,Q,M) CRY68(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 6.8V 700MW SFLAT
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRY68(TE85L,Q,M) CRY68(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 6.8V 700MW SFLAT
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRY62(TE85L,Q,M) CRY62(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 6.2V 700MW SFLAT
Packaging: Tape & Reel (TR)
Tolerance: ±9.68%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRY62(TE85L,Q,M) CRY62(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 6.2V 700MW SFLAT
Packaging: Cut Tape (CT)
Tolerance: ±9.68%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRZ36(TE85L,Q,M) CRZ36(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 36V 700MW SFLAT
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ36(TE85L,Q,M) CRZ36(TE85L,Q,M) Toshiba Semiconductor and Storage CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68 Description: DIODE ZENER 36V 700MW SFLAT
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
auf Bestellung 1374 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CMS08(TE12L,Q,M) CMS08(TE12L,Q,M) Toshiba Semiconductor and Storage CMS08_datasheet_en_20190307.pdf?did=3142&prodName=CMS08 Description: DIODE SCHOTTKY 30V 1A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
28+0.64 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.24 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N48FU,LF SSM6N48FU,LF Toshiba Semiconductor and Storage SSM6N48FU_datasheet_en_20140301.pdf?did=2497&prodName=SSM6N48FU Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N48FU,LF SSM6N48FU,LF Toshiba Semiconductor and Storage SSM6N48FU_datasheet_en_20140301.pdf?did=2497&prodName=SSM6N48FU Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
auf Bestellung 2710 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
TC74AC14FTEL TC74AC14FTEL Toshiba Semiconductor and Storage TC74AC14F_datasheet_en_20240319.pdf?did=70724&prodName=TC74AC14F Description: IC INVERT SCHMIT 6CH 6IN 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1704,LF RN1704,LF Toshiba Semiconductor and Storage docget.jsp?did=18817&prodName=RN1705 Description: NPNX2 BRT Q1BSR47KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1704,LF RN1704,LF Toshiba Semiconductor and Storage docget.jsp?did=18817&prodName=RN1705 Description: NPNX2 BRT Q1BSR47KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
75+0.24 EUR
120+0.15 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
TLP627M(D4-TP5,E TLP627M(D4-TP5,E Toshiba Semiconductor and Storage TLP627M_datasheet_en_20181206.pdf?did=63799&prodName=TLP627M Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 110µs, 30µs
Rise / Fall Time (Typ): 60µs, 30µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3927 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
19+0.96 EUR
100+0.70 EUR
500+0.59 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TLP627MF(TP4,E TLP627MF(TP4,E Toshiba Semiconductor and Storage TLP627M_datasheet_en_20181206.pdf?did=63799&prodName=TLP627M Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 110µs, 30µs
Rise / Fall Time (Typ): 60µs, 30µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2115MFV,L3F RN2115MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=742&prodName=RN2116MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.05 EUR
16000+0.05 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
RN2115MFV,L3F RN2115MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=742&prodName=RN2116MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 23478 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
97+0.18 EUR
156+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.06 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
RN4908,LXHF(CT RN4908,LXHF(CT Toshiba Semiconductor and Storage RN4908_datasheet_en_20210824.pdf?did=18963&prodName=RN4908 Description: AUTO AEC-Q TR PNP + NPN BRT, Q1B
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN4908,LXHF(CT RN4908,LXHF(CT Toshiba Semiconductor and Storage RN4908_datasheet_en_20210824.pdf?did=18963&prodName=RN4908 Description: AUTO AEC-Q TR PNP + NPN BRT, Q1B
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
RN4908FE,LXHF(CT RN4908FE,LXHF(CT Toshiba Semiconductor and Storage RN4908FE_datasheet_en_20210818.pdf?did=19031&prodName=RN4908FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.12 EUR
8000+0.11 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RN4908FE,LXHF(CT RN4908FE,LXHF(CT Toshiba Semiconductor and Storage RN4908FE_datasheet_en_20210818.pdf?did=19031&prodName=RN4908FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
74HC04D 74HC04D Toshiba Semiconductor and Storage docget.jsp?did=37182&prodName=74HC04D Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.22 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
74HC04D 74HC04D Toshiba Semiconductor and Storage docget.jsp?did=37182&prodName=74HC04D Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
auf Bestellung 2822 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
48+0.37 EUR
54+0.33 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
TLP185(TPR,SE TLP185(TPR,SE Toshiba Semiconductor and Storage TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
34+0.53 EUR
100+0.38 EUR
500+0.31 EUR
1000+0.29 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
HN4B102J(TE85L,F) Toshiba Semiconductor and Storage HN4B102J_datasheet_en_20131101.pdf?did=639&prodName=HN4B102J Description: PB-F POWER TRANSISTOR SMV MOQ=30
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 750mW
Current - Collector (Ic) (Max): 1.8A, 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 2V
Supplier Device Package: SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN4B102J(TE85L,F) Toshiba Semiconductor and Storage HN4B102J_datasheet_en_20131101.pdf?did=639&prodName=HN4B102J Description: PB-F POWER TRANSISTOR SMV MOQ=30
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 750mW
Current - Collector (Ic) (Max): 1.8A, 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 2V
Supplier Device Package: SMV
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.58 EUR
18+0.99 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
TC74HC540AF(EL,F) TC74HC540AF_datasheet_en_20140301.pdf?did=16401&prodName=TC74HC540AF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 6V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRG09(TE85L,Q,M) CRG09_datasheet_en_20131101.pdf?did=6239&prodName=CRG09
CRG09(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MKZ12V,LM(B
MKZ12V,LM(B
Hersteller: Toshiba Semiconductor and Storage
Description: 12V ZENER DIODE, SOT23 PD (MAX):
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 44pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MKZ12V,LM(B
MKZ12V,LM(B
Hersteller: Toshiba Semiconductor and Storage
Description: 12V ZENER DIODE, SOT23 PD (MAX):
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 44pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 5872 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
91+0.19 EUR
113+0.16 EUR
154+0.11 EUR
250+0.09 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE,LXHF(CT RN2904FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2904FE
RN2904FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.12 EUR
8000+0.11 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE,LXHF(CT RN2904FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2904FE
RN2904FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE,LF RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE
RN2904FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.07 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE,LF RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE
RN2904FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
61+0.29 EUR
125+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
XCUZ15V,H3XHF(B docget.jsp?did=153645&prodName=XCUZ30V
XCUZ15V,H3XHF(B
Hersteller: Toshiba Semiconductor and Storage
Description: 15 V ZENER DIODEAEC-Q, SOD-323(U
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 36pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 24V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
XCUZ15V,H3XHF(B docget.jsp?did=153645&prodName=XCUZ30V
XCUZ15V,H3XHF(B
Hersteller: Toshiba Semiconductor and Storage
Description: 15 V ZENER DIODEAEC-Q, SOD-323(U
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 36pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 24V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
77+0.23 EUR
156+0.11 EUR
500+0.09 EUR
1000+0.07 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
CRS15I40A(TE85L,QM CRS15I40A_datasheet_en_20140328.pdf?did=15094&prodName=CRS15I40A
CRS15I40A(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS15I40A(TE85L,QM CRS15I40A_datasheet_en_20140328.pdf?did=15094&prodName=CRS15I40A
CRS15I40A(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.59 EUR
100+0.38 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
2SK3798(STA4,Q,M) docget.jsp?did=1724&prodName=2SK3798
Hersteller: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR TO-220(S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRS14(TE85L,Q,M) CRS14_datasheet_en_20181115.pdf?did=22737&prodName=CRS14
CRS14(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRZ24(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ24(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 24V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 17 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I30B(TE85L,QM CRS10I30B_datasheet_en_20181115.pdf?did=2128&prodName=CRS10I30B
CRS10I30B(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I30B(TE85L,QM CRS10I30B_datasheet_en_20181115.pdf?did=2128&prodName=CRS10I30B
CRS10I30B(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
auf Bestellung 2730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
39+0.45 EUR
100+0.23 EUR
500+0.20 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I40B(TE85L,QM CRS10I40B_datasheet_en_20201014.pdf?did=14633&prodName=CRS10I40B
CRS10I40B(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I40B(TE85L,QM CRS10I40B_datasheet_en_20201014.pdf?did=14633&prodName=CRS10I40B
CRS10I40B(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 4863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
30+0.60 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
CRG05(TE85L,Q,M)
CRG05(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 800V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRG05(TE85L,Q,M)
CRG05(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 800V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I40A(TE85L,QM CRS10I40A_datasheet_en_20220526.pdf?did=14631&prodName=CRS10I40A
CRS10I40A(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 40V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRS10I40A(TE85L,QM CRS10I40A_datasheet_en_20220526.pdf?did=14631&prodName=CRS10I40A
CRS10I40A(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 40V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 2799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
32+0.56 EUR
100+0.34 EUR
500+0.31 EUR
1000+0.21 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CRF02(TE85L,Q,M)
CRF02(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 800V 500MA S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRF02(TE85L,Q,M)
CRF02(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 800V 500MA S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
auf Bestellung 2698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.57 EUR
100+0.34 EUR
500+0.32 EUR
1000+0.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
CRZ30(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ30(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 30V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 21 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRZ30(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ30(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 30V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 21 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRZ10(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ10(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 10V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ10(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ10(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 10V 700MW SFLAT
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRZ13(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ13(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 13V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ13(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ13(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 13V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRZ27(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ27(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 27V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ27(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ27(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 27V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRZ20(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ20(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 20V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 14 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ20(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ20(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 20V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 14 V
auf Bestellung 2830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRY68(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRY68(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 6.8V 700MW SFLAT
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRY68(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRY68(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 6.8V 700MW SFLAT
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRY62(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRY62(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 6.2V 700MW SFLAT
Packaging: Tape & Reel (TR)
Tolerance: ±9.68%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRY62(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRY62(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 6.2V 700MW SFLAT
Packaging: Cut Tape (CT)
Tolerance: ±9.68%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRZ36(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ36(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 36V 700MW SFLAT
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ36(TE85L,Q,M) CRY68_datasheet_en_20141010.pdf?did=3175&prodName=CRY68
CRZ36(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 36V 700MW SFLAT
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
auf Bestellung 1374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CMS08(TE12L,Q,M) CMS08_datasheet_en_20190307.pdf?did=3142&prodName=CMS08
CMS08(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
28+0.64 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.24 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N48FU,LF SSM6N48FU_datasheet_en_20140301.pdf?did=2497&prodName=SSM6N48FU
SSM6N48FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N48FU,LF SSM6N48FU_datasheet_en_20140301.pdf?did=2497&prodName=SSM6N48FU
SSM6N48FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
auf Bestellung 2710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
TC74AC14FTEL TC74AC14F_datasheet_en_20240319.pdf?did=70724&prodName=TC74AC14F
TC74AC14FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMIT 6CH 6IN 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1704,LF docget.jsp?did=18817&prodName=RN1705
RN1704,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1704,LF docget.jsp?did=18817&prodName=RN1705
RN1704,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
75+0.24 EUR
120+0.15 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
TLP627M(D4-TP5,E TLP627M_datasheet_en_20181206.pdf?did=63799&prodName=TLP627M
TLP627M(D4-TP5,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 110µs, 30µs
Rise / Fall Time (Typ): 60µs, 30µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
19+0.96 EUR
100+0.70 EUR
500+0.59 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TLP627MF(TP4,E TLP627M_datasheet_en_20181206.pdf?did=63799&prodName=TLP627M
TLP627MF(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 110µs, 30µs
Rise / Fall Time (Typ): 60µs, 30µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2115MFV,L3F docget.jsp?did=742&prodName=RN2116MFV
RN2115MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.05 EUR
16000+0.05 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
RN2115MFV,L3F docget.jsp?did=742&prodName=RN2116MFV
RN2115MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 23478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
97+0.18 EUR
156+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.06 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
RN4908,LXHF(CT RN4908_datasheet_en_20210824.pdf?did=18963&prodName=RN4908
RN4908,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP + NPN BRT, Q1B
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN4908,LXHF(CT RN4908_datasheet_en_20210824.pdf?did=18963&prodName=RN4908
RN4908,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP + NPN BRT, Q1B
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
RN4908FE,LXHF(CT RN4908FE_datasheet_en_20210818.pdf?did=19031&prodName=RN4908FE
RN4908FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.12 EUR
8000+0.11 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RN4908FE,LXHF(CT RN4908FE_datasheet_en_20210818.pdf?did=19031&prodName=RN4908FE
RN4908FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
74HC04D docget.jsp?did=37182&prodName=74HC04D
74HC04D
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.22 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
74HC04D docget.jsp?did=37182&prodName=74HC04D
74HC04D
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
auf Bestellung 2822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
48+0.37 EUR
54+0.33 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
TLP185(TPR,SE TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE
TLP185(TPR,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
34+0.53 EUR
100+0.38 EUR
500+0.31 EUR
1000+0.29 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
HN4B102J(TE85L,F) HN4B102J_datasheet_en_20131101.pdf?did=639&prodName=HN4B102J
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER TRANSISTOR SMV MOQ=30
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 750mW
Current - Collector (Ic) (Max): 1.8A, 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 2V
Supplier Device Package: SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN4B102J(TE85L,F) HN4B102J_datasheet_en_20131101.pdf?did=639&prodName=HN4B102J
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER TRANSISTOR SMV MOQ=30
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 750mW
Current - Collector (Ic) (Max): 1.8A, 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 2V
Supplier Device Package: SMV
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
18+0.99 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 154 176 198 213 214 215 216 217 218 219 220 221 222 223 224  [ Nächste Seite >> ]