Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13435) > Seite 219 nach 224
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TLP2719(D4-TP4,E | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 20V Voltage - Forward (Vf) (Typ): 1.6V Data Rate: 1MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 800ns, 800ns Number of Channels: 1 Current - Output / Channel: 8 mA |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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TCKE912NA,RF | Toshiba Semiconductor and Storage |
![]() Features: Load Discharge, Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WSON (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TCKE912NA,RF | Toshiba Semiconductor and Storage |
![]() Features: Load Discharge, Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WSON (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
auf Bestellung 2965 Stücke: Lieferzeit 10-14 Tag (e) |
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TCKE920NL,RF | Toshiba Semiconductor and Storage |
![]() Features: Load Discharge, Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WSON (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TCKE920NL,RF | Toshiba Semiconductor and Storage |
![]() Features: Load Discharge, Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WSON (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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TCKE912NL,RF | Toshiba Semiconductor and Storage |
![]() Features: Load Discharge, Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WSON (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TCKE912NL,RF | Toshiba Semiconductor and Storage |
![]() Features: Load Discharge, Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WSON (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
auf Bestellung 2886 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3412SRLA(TP,E(O | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.6VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 125°C Termination Style: SMD (SMT) Tab Voltage - Forward (Vf) (Typ): 1.2V Load Current: 400 mA Input Type: DC Voltage - Isolation: 500Vrms Supplier Device Package: S-VSON4T (2x1.45) Turn On / Turn Off Time (Typ): 110µs, 30µs Number of Channels: 1 Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP3412SRLA(TP,E(O | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.6VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 125°C Termination Style: SMD (SMT) Tab Voltage - Forward (Vf) (Typ): 1.2V Load Current: 400 mA Input Type: DC Voltage - Isolation: 500Vrms Supplier Device Package: S-VSON4T (2x1.45) Turn On / Turn Off Time (Typ): 110µs, 30µs Number of Channels: 1 Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
auf Bestellung 2381 Stücke: Lieferzeit 10-14 Tag (e) |
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TK080N60Z1,S1F | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.17mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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74LCX373FT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Delay Time - Propagation: 1.5ns Supplier Device Package: 20-TSSOP |
auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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74VHC238FT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOPB Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4935 Stücke: Lieferzeit 10-14 Tag (e) |
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TC74ACT14FTEL | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMIT 6CH 1IN 14TSSOP Features: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 11.4ns @ 5V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
TC74HCT540AF(EL,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-SOP |
Produkt ist nicht verfügbar |
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TC74HC4050AFTEL | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 6V 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC74HC4050AFELF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-SOP |
Produkt ist nicht verfügbar |
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TC7WH14FK,LJ(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 3 Supplier Device Package: 8-SSOP Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
auf Bestellung 9959 Stücke: Lieferzeit 10-14 Tag (e) |
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MG08SDA800E | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 8TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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MG08SDA600E | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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TK125N60Z1,S1F | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3545A(LF1,F | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 4 A Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 60 mOhms |
Produkt ist nicht verfügbar |
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TC7WH08FU,LJ(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
auf Bestellung 35564 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1941-O(Q) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P(N) Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 100 W |
Produkt ist nicht verfügbar |
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TJ60S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V |
Produkt ist nicht verfügbar |
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TJ60S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V |
auf Bestellung 2240 Stücke: Lieferzeit 10-14 Tag (e) |
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TJ30S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V |
Produkt ist nicht verfügbar |
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SSM6K818R,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6K818R,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 5583 Stücke: Lieferzeit 10-14 Tag (e) |
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TC62D748AFG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 24-SOP (0.236", 6.00mm Width) Mounting Type: Surface Mount Number of Outputs: 16 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: LED Lighting Current - Output / Channel: 90mA Internal Switch(s): No Topology: Shift Register Supplier Device Package: 24-SSOP Dimming: No Voltage - Supply (Min): 3.3V Voltage - Supply (Max): 5V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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XPHR7904PS,L1XHQ | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 3W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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XPHR7904PS,L1XHQ | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 3W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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TLP387(E | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1.2V Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67H401FTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 6A Interface: Parallel, PWM Operating Temperature: -20°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - AC, DC: Brushed DC |
auf Bestellung 22755 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67S101AFTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
Produkt ist nicht verfügbar |
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TB67S101AFTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
auf Bestellung 3900 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67S285FTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel, Serial Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (8) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67S285FTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel, Serial Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (8) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67S539SFTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.8A Interface: Logic Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 33V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 33V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67S539SFTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.8A Interface: Logic Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 33V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 33V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67H480FNG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67H480FNG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67H481FNG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TB67H481FNG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1 |
auf Bestellung 3955 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67S589FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1 Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 50V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67S589FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1 Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 50V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TC74AC02FTEL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC74HC125AFELF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 6V 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 14-SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TC74HC14AFELF | Toshiba Semiconductor and Storage |
![]() Features: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.5V Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN4904FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4904FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4904FE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4904FE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2310,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN2310,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 2987 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4905FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4905FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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XPJ1R004PB,LXHQ | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: S-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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XPJ1R004PB,LXHQ | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: S-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4207-BL(TE85L,F | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SMV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN1313,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: USM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP2719(D4-TP4,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
Description: OPTOCOUPLER SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 2.96 EUR |
10+ | 1.88 EUR |
100+ | 1.34 EUR |
500+ | 1.12 EUR |
TCKE912NA,RF |
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Hersteller: Toshiba Semiconductor and Storage
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TCKE912NA,RF |
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Hersteller: Toshiba Semiconductor and Storage
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.69 EUR |
15+ | 1.22 EUR |
25+ | 1.10 EUR |
100+ | 0.97 EUR |
250+ | 0.91 EUR |
500+ | 0.87 EUR |
1000+ | 0.84 EUR |
TCKE920NL,RF |
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Hersteller: Toshiba Semiconductor and Storage
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TCKE920NL,RF |
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Hersteller: Toshiba Semiconductor and Storage
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.69 EUR |
15+ | 1.22 EUR |
25+ | 1.10 EUR |
100+ | 0.97 EUR |
250+ | 0.91 EUR |
500+ | 0.87 EUR |
1000+ | 0.84 EUR |
TCKE912NL,RF |
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Hersteller: Toshiba Semiconductor and Storage
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TCKE912NL,RF |
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Hersteller: Toshiba Semiconductor and Storage
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Description: EFUSE IC WSON8, 4A/23V FAST PROT
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
auf Bestellung 2886 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.69 EUR |
15+ | 1.22 EUR |
25+ | 1.10 EUR |
100+ | 0.97 EUR |
250+ | 0.91 EUR |
500+ | 0.87 EUR |
1000+ | 0.84 EUR |
TLP3412SRLA(TP,E(O |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY; LOWER CR; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Forward (Vf) (Typ): 1.2V
Load Current: 400 mA
Input Type: DC
Voltage - Isolation: 500Vrms
Supplier Device Package: S-VSON4T (2x1.45)
Turn On / Turn Off Time (Typ): 110µs, 30µs
Number of Channels: 1
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: PHOTORELAY; LOWER CR; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Forward (Vf) (Typ): 1.2V
Load Current: 400 mA
Input Type: DC
Voltage - Isolation: 500Vrms
Supplier Device Package: S-VSON4T (2x1.45)
Turn On / Turn Off Time (Typ): 110µs, 30µs
Number of Channels: 1
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP3412SRLA(TP,E(O |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY; LOWER CR; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Forward (Vf) (Typ): 1.2V
Load Current: 400 mA
Input Type: DC
Voltage - Isolation: 500Vrms
Supplier Device Package: S-VSON4T (2x1.45)
Turn On / Turn Off Time (Typ): 110µs, 30µs
Number of Channels: 1
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: PHOTORELAY; LOWER CR; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Forward (Vf) (Typ): 1.2V
Load Current: 400 mA
Input Type: DC
Voltage - Isolation: 500Vrms
Supplier Device Package: S-VSON4T (2x1.45)
Turn On / Turn Off Time (Typ): 110µs, 30µs
Number of Channels: 1
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 2381 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.60 EUR |
10+ | 7.45 EUR |
100+ | 5.84 EUR |
500+ | 5.21 EUR |
1000+ | 5.01 EUR |
TK080N60Z1,S1F |
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Hersteller: Toshiba Semiconductor and Storage
Description: 600V DTMOS6 TO-247 80MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Description: 600V DTMOS6 TO-247 80MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.03 EUR |
74LCX373FT |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-TSSOP
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 0.58 EUR |
44+ | 0.41 EUR |
49+ | 0.36 EUR |
100+ | 0.31 EUR |
250+ | 0.29 EUR |
500+ | 0.28 EUR |
1000+ | 0.26 EUR |
74VHC238FT |
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Hersteller: Toshiba Semiconductor and Storage
Description: 74VHC CMOS LOGIC IC SERIES 3-TO-
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Grade: Automotive
Qualification: AEC-Q100
Description: 74VHC CMOS LOGIC IC SERIES 3-TO-
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4935 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.93 EUR |
33+ | 0.55 EUR |
40+ | 0.45 EUR |
100+ | 0.34 EUR |
250+ | 0.29 EUR |
500+ | 0.25 EUR |
1000+ | 0.22 EUR |
TC74ACT14FTEL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMIT 6CH 1IN 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11.4ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: IC INVERT SCHMIT 6CH 1IN 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11.4ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC74HCT540AF(EL,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOP
Description: IC BUFFER INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC74HC4050AFTEL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-TSSOP
Description: IC BUFFER NON-INVERT 6V 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC74HC4050AFELF |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOP
Description: IC BUFFER NON-INVERT 6V 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC7WH14FK,LJ(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
auf Bestellung 9959 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 0.30 EUR |
89+ | 0.20 EUR |
102+ | 0.17 EUR |
120+ | 0.15 EUR |
250+ | 0.14 EUR |
500+ | 0.13 EUR |
1000+ | 0.12 EUR |
MG08SDA800E |
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Hersteller: Toshiba Semiconductor and Storage
Description: MG08 8TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MG08 8TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 494.63 EUR |
MG08SDA600E |
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Hersteller: Toshiba Semiconductor and Storage
Description: MG08 6TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MG08 6TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 442.55 EUR |
TK125N60Z1,S1F |
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Hersteller: Toshiba Semiconductor and Storage
Description: 6OOV DTMOS6 TO-247 125MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
Description: 6OOV DTMOS6 TO-247 125MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.08 EUR |
TLP3545A(LF1,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.5A 0-40V
Packaging: Bulk
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 60 mOhms
Description: SSR RELAY SPST-NO 3.5A 0-40V
Packaging: Bulk
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 60 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC7WH08FU,LJ(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 35564 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 0.30 EUR |
89+ | 0.20 EUR |
102+ | 0.17 EUR |
120+ | 0.15 EUR |
250+ | 0.14 EUR |
500+ | 0.13 EUR |
1000+ | 0.12 EUR |
2SA1941-O(Q) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 140V 10A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Description: TRANS PNP 140V 10A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TJ60S06M3L(T6L1,NQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TJ60S06M3L(T6L1,NQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.82 EUR |
10+ | 3.12 EUR |
100+ | 2.15 EUR |
500+ | 1.74 EUR |
1000+ | 1.61 EUR |
TJ30S06M3L(T6L1,NQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSM6K818R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 30V, +/-20V, 15A ,0.
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Qualification: AEC-Q101
Description: N-CH MOSFET 30V, +/-20V, 15A ,0.
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.43 EUR |
SSM6K818R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 30V, +/-20V, 15A ,0.
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Qualification: AEC-Q101
Description: N-CH MOSFET 30V, +/-20V, 15A ,0.
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 5583 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 1.78 EUR |
16+ | 1.11 EUR |
100+ | 0.73 EUR |
500+ | 0.56 EUR |
1000+ | 0.51 EUR |
TC62D748AFG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: CONSTANT CURRENT PANEL LED DRIVE
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Shift Register
Supplier Device Package: 24-SSOP
Dimming: No
Voltage - Supply (Min): 3.3V
Voltage - Supply (Max): 5V
Description: CONSTANT CURRENT PANEL LED DRIVE
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Shift Register
Supplier Device Package: 24-SSOP
Dimming: No
Voltage - Supply (Min): 3.3V
Voltage - Supply (Max): 5V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.78 EUR |
11+ | 1.72 EUR |
25+ | 1.44 EUR |
100+ | 1.13 EUR |
250+ | 0.97 EUR |
500+ | 0.87 EUR |
1000+ | 0.79 EUR |
XPHR7904PS,L1XHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Qualification: AEC-Q101
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XPHR7904PS,L1XHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Qualification: AEC-Q101
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP387(E |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR OPTOCOUPLER; HIGH VCE
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TRANSISTOR OPTOCOUPLER; HIGH VCE
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.62 EUR |
18+ | 0.99 EUR |
100+ | 0.67 EUR |
TB67H401FTG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRIVER 4.75V-5.25V 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - AC, DC: Brushed DC
Description: IC MTR DRIVER 4.75V-5.25V 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - AC, DC: Brushed DC
auf Bestellung 22755 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.68 EUR |
10+ | 6.52 EUR |
25+ | 5.70 EUR |
100+ | 4.79 EUR |
250+ | 4.34 EUR |
500+ | 4.07 EUR |
1000+ | 3.84 EUR |
TB67S101AFTG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TB67S101AFTG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.06 EUR |
10+ | 4.56 EUR |
25+ | 3.91 EUR |
100+ | 3.17 EUR |
250+ | 2.80 EUR |
500+ | 2.58 EUR |
1000+ | 2.39 EUR |
TB67S285FTG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 3.40 EUR |
TB67S285FTG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.28 EUR |
10+ | 6.08 EUR |
25+ | 5.25 EUR |
100+ | 4.30 EUR |
250+ | 3.84 EUR |
500+ | 3.55 EUR |
1000+ | 3.40 EUR |
TB67S539SFTG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 1.26 EUR |
TB67S539SFTG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.52 EUR |
10+ | 2.85 EUR |
25+ | 2.42 EUR |
100+ | 1.92 EUR |
250+ | 1.68 EUR |
500+ | 1.53 EUR |
1000+ | 1.41 EUR |
TB67H480FNG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 1.46 EUR |
TB67H480FNG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.05 EUR |
10+ | 3.21 EUR |
25+ | 2.73 EUR |
100+ | 2.18 EUR |
250+ | 1.91 EUR |
500+ | 1.75 EUR |
1000+ | 1.61 EUR |
TB67H481FNG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TB67H481FNG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
auf Bestellung 3955 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.05 EUR |
10+ | 3.21 EUR |
25+ | 2.73 EUR |
100+ | 2.18 EUR |
250+ | 1.91 EUR |
500+ | 1.75 EUR |
1000+ | 1.61 EUR |
TB67S589FNG(O,EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 1.90 EUR |
TB67S589FNG(O,EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.90 EUR |
10+ | 3.86 EUR |
25+ | 3.33 EUR |
100+ | 2.74 EUR |
250+ | 2.45 EUR |
500+ | 2.27 EUR |
1000+ | 2.13 EUR |
TC74AC02FTEL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC74HC125AFELF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-SOP
Description: IC BUFFER NON-INVERT 6V 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC74HC14AFELF |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN4904FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.12 EUR |
8000+ | 0.11 EUR |
RN4904FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 0.48 EUR |
RN4904FE,LF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.07 EUR |
RN4904FE,LF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.35 EUR |
81+ | 0.22 EUR |
130+ | 0.14 EUR |
500+ | 0.10 EUR |
1000+ | 0.09 EUR |
2000+ | 0.08 EUR |
RN2310,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN2310,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 2987 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
54+ | 0.33 EUR |
100+ | 0.20 EUR |
500+ | 0.15 EUR |
1000+ | 0.13 EUR |
RN4905FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.14 EUR |
8000+ | 0.12 EUR |
RN4905FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 0.67 EUR |
XPJ1R004PB,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Qualification: AEC-Q101
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 1.57 EUR |
XPJ1R004PB,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Qualification: AEC-Q101
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.14 EUR |
10+ | 3.27 EUR |
25+ | 2.78 EUR |
100+ | 2.22 EUR |
250+ | 1.95 EUR |
500+ | 1.78 EUR |
2SC4207-BL(TE85L,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN1313,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: USM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: USM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |