Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13443) > Seite 223 nach 225
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TLP241BPF(D4,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY, OVP, OTP, ROHS; VDE; Packaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: DC Mounting Type: Through Hole Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: PC Pin Load Current: 1.4 A Approval Agency: cUR, UR, VDE Supplier Device Package: 4-DIP Voltage - Load: 0 V ~ 80 V On-State Resistance (Max): 280 mOhms |
Produkt ist nicht verfügbar |
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TLP241BP(E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY, OVP, OTP, ROHS Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: DC Mounting Type: Through Hole Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: PC Pin Load Current: 1.4 A Approval Agency: cUR, UR, VDE Supplier Device Package: 4-DIP Voltage - Load: 0 V ~ 80 V On-State Resistance (Max): 280 mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP241BPF(E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE Packaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: DC Mounting Type: Through Hole Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: PC Pin Load Current: 1.4 A Approval Agency: cUR, UR, VDE Supplier Device Package: 4-DIP Voltage - Load: 0 V ~ 80 V On-State Resistance (Max): 280 mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP241BPF(LF4,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 1.4 A Approval Agency: cUR, UR, VDE Supplier Device Package: 4-SMD Voltage - Load: 0 V ~ 80 V On-State Resistance (Max): 280 mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
TLP785(D4-GRH,F | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TC78H620FNG | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 2.5V ~ 15V Supplier Device Package: 16-SSOP Motor Type - Stepper: Unipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN2409,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2409,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TMPM369FDFG | Toshiba Semiconductor and Storage |
![]() Packaging: Tray Package / Case: 144-FQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, Microwire, SIO, SPI, SSP, UART/USART, USB Peripherals: DMA, POR, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 102 DigiKey Programmable: Not Verified |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6P56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 0.8A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
Produkt ist nicht verfügbar |
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TPH2R408QM,LQ | Toshiba Semiconductor and Storage |
Description: 80V U-MOS X-H SOP-ADVANCE(N) 2.4 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V |
Produkt ist nicht verfügbar |
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TPH3R008QM,LQ | Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 900µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH3R008QM,LQ | Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 900µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V |
auf Bestellung 12263 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH4R008NH1,LQ | Toshiba Semiconductor and Storage |
Description: 80V U-MOS VIII-H SOP-ADVANCE(N) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN1104MFV,L3F(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1104MFV,L3F(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 23791 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1104MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1104MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2104MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN2104MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 7725 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3640A(TPL,E | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 1 A Approval Agency: cUR, UR, VDE Supplier Device Package: 4-SO Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 140 mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP3640A(TPL,E | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 1 A Approval Agency: cUR, UR, VDE Supplier Device Package: 4-SO Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 140 mOhms |
auf Bestellung 1204 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3640A(V4TPL,E | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 1 A Approval Agency: cUR, UR, VDE Supplier Device Package: 4-SO Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 140 mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP3640A(V4TPL,E | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 1 A Approval Agency: cUR, UR, VDE Supplier Device Package: 4-SO Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 140 mOhms |
auf Bestellung 661 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1111,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SSM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 Only |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1111,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SSM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 Only |
auf Bestellung 5470 Stücke: Lieferzeit 10-14 Tag (e) |
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TC74HC00AFELF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RN1905FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1905FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7386 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2905FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2905FE,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5500 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2EF25,LM(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.23V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP3414S(TP,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY; FAST SWITCHING; ROHS Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.24VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 250 mA Supplier Device Package: S-VSON4T (2x1.45) Voltage - Load: 0 V ~ 40 V On-State Resistance (Max): 3 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLP3414S(TP,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY; FAST SWITCHING; ROHS Packaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.24VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 250 mA Supplier Device Package: S-VSON4T (2x1.45) Voltage - Load: 0 V ~ 40 V On-State Resistance (Max): 3 Ohms |
auf Bestellung 2464 Stücke: Lieferzeit 10-14 Tag (e) |
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CRG09A,LQ(M | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TK024N60Z1,S1F | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 33A, 10V Power Dissipation (Max): 506W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.84mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 300 V |
auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
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XCUZ18V,H3XHF(B | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 31pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.1A (8/20µs) Voltage - Reverse Standoff (Typ): 13V (Max) Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.8V Voltage - Clamping (Max) @ Ipp: 28.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XCUZ18V,H3XHF(B | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 31pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.1A (8/20µs) Voltage - Reverse Standoff (Typ): 13V (Max) Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.8V Voltage - Clamping (Max) @ Ipp: 28.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5824 Stücke: Lieferzeit 10-14 Tag (e) |
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7UL1G00NX,ELF | Toshiba Semiconductor and Storage |
Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 6-MP6D (1.45x1) Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
7UL1G00NX,ELF | Toshiba Semiconductor and Storage |
Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 6-MP6D (1.45x1) Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TRS30N120HB,S1Q | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 41A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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DCM341A01(AS,EL) | Toshiba Semiconductor and Storage |
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Data Rate: 50Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns Isolated Power: No Channel Type: Unidirectional Pulse Width Distortion (Max): 5.1ns Grade: Automotive Number of Channels: 4 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DCM341A01(AS,EL) | Toshiba Semiconductor and Storage |
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Data Rate: 50Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns Isolated Power: No Channel Type: Unidirectional Pulse Width Distortion (Max): 5.1ns Grade: Automotive Number of Channels: 4 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TC74VCX164245ELF | Toshiba Semiconductor and Storage |
Description: IC TRANSLATOR BIDIR 48TSSOP Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 48-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1.65 V ~ 2.7 V Voltage - VCCB: 2.3 V ~ 3.6 V Number of Circuits: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TBD62503AFG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 300mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TBD62503AFG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 300mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP |
auf Bestellung 723 Stücke: Lieferzeit 10-14 Tag (e) |
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TBD62503AFWG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 300mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TBD62503AFWG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 300mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP |
auf Bestellung 9374 Stücke: Lieferzeit 10-14 Tag (e) |
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TC74VCX16245(EL,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 48-TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1SS361FV,L3XGF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: VESM Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLX9910(TPL,F | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 13.5V Turn On / Turn Off Time (Typ): 100µs, 500µs Grade: Automotive Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLX9910(TPL,F | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 13.5V Turn On / Turn Off Time (Typ): 100µs, 500µs Grade: Automotive Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA Qualification: AEC-Q101 |
auf Bestellung 2011 Stücke: Lieferzeit 10-14 Tag (e) |
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CMZ12(TE12L,Q,M) | Toshiba Semiconductor and Storage |
![]() Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: M-FLAT (2.4x3.8) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 8 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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CMZ12(TE12L,Q,M) | Toshiba Semiconductor and Storage |
![]() Tolerance: ±10% Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: M-FLAT (2.4x3.8) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 8 V |
auf Bestellung 10208 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67S539SFTG(EL) | Toshiba Semiconductor and Storage |
Description: 40V/2A 32 MICRO-STEP STEPPING MO Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.8A Interface: Logic Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 33V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 33V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DCM341B01(AS,EL) | Toshiba Semiconductor and Storage |
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Data Rate: 50Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns Isolated Power: No Channel Type: Unidirectional Pulse Width Distortion (Max): 5.1ns Grade: Automotive Number of Channels: 4 Qualification: AEC-Q100 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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DCM341B01(AS,EL) | Toshiba Semiconductor and Storage |
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Data Rate: 50Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns Isolated Power: No Channel Type: Unidirectional Pulse Width Distortion (Max): 5.1ns Grade: Automotive Number of Channels: 4 Qualification: AEC-Q100 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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DCM341L01(AS,EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Data Rate: 50Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns Isolated Power: No Channel Type: Unidirectional Pulse Width Distortion (Max): 5.1ns Grade: Automotive Number of Channels: 4 Qualification: AEC-Q100 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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DCM341L01(AS,EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Data Rate: 50Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns Isolated Power: No Channel Type: Unidirectional Pulse Width Distortion (Max): 5.1ns Grade: Automotive Number of Channels: 4 Qualification: AEC-Q100 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3UF08A,LM | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 580 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 0.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 1.257V @ 300mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
TLP241BPF(D4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP241BP(E |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP241BPF(E |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP241BPF(LF4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP785(D4-GRH,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC78H620FNG |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MTRDRV UNIPLR 2.7-5.5V 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 16-SSOP
Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Description: IC MTRDRV UNIPLR 2.7-5.5V 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 16-SSOP
Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN2409,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.054 EUR |
RN2409,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 0.26 EUR |
106+ | 0.17 EUR |
172+ | 0.1 EUR |
500+ | 0.075 EUR |
1000+ | 0.065 EUR |
TMPM369FDFG |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-FQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, Microwire, SIO, SPI, SSP, UART/USART, USB
Peripherals: DMA, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-FQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, Microwire, SIO, SPI, SSP, UART/USART, USB
Peripherals: DMA, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.15 EUR |
10+ | 12.55 EUR |
25+ | 11.7 EUR |
200+ | 10.23 EUR |
SSM6P56FE,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TPH2R408QM,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: 80V U-MOS X-H SOP-ADVANCE(N) 2.4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Description: 80V U-MOS X-H SOP-ADVANCE(N) 2.4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TPH3R008QM,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.96 EUR |
TPH3R008QM,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
auf Bestellung 12263 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.53 EUR |
10+ | 2.07 EUR |
100+ | 1.51 EUR |
500+ | 1.2 EUR |
1000+ | 1.1 EUR |
2000+ | 1.02 EUR |
TPH4R008NH1,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: 80V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Description: 80V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN1104MFV,L3F(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.043 EUR |
RN1104MFV,L3F(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 23791 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
72+ | 0.25 EUR |
113+ | 0.16 EUR |
182+ | 0.097 EUR |
500+ | 0.07 EUR |
1000+ | 0.062 EUR |
2000+ | 0.054 EUR |
RN1104MFV,L3XHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.077 EUR |
16000+ | 0.07 EUR |
RN1104MFV,L3XHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 0.44 EUR |
67+ | 0.27 EUR |
107+ | 0.17 EUR |
500+ | 0.12 EUR |
1000+ | 0.11 EUR |
2000+ | 0.095 EUR |
RN2104MFV,L3XHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN2104MFV,L3XHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 7725 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 0.44 EUR |
67+ | 0.27 EUR |
107+ | 0.17 EUR |
500+ | 0.12 EUR |
1000+ | 0.11 EUR |
2000+ | 0.095 EUR |
TLP3640A(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP3640A(TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
auf Bestellung 1204 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.22 EUR |
10+ | 3.06 EUR |
100+ | 2.37 EUR |
500+ | 2.07 EUR |
1000+ | 1.97 EUR |
TLP3640A(V4TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Description: PHOTORELAY 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP3640A(V4TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
Description: PHOTORELAY 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 1 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SO
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 140 mOhms
auf Bestellung 661 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.22 EUR |
10+ | 3.06 EUR |
100+ | 2.37 EUR |
500+ | 2.07 EUR |
RN1111,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.099 EUR |
RN1111,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 5470 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 0.48 EUR |
61+ | 0.29 EUR |
100+ | 0.18 EUR |
500+ | 0.13 EUR |
1000+ | 0.12 EUR |
TC74HC00AFELF |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RN1905FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.14 EUR |
RN1905FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7386 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.65 EUR |
44+ | 0.4 EUR |
100+ | 0.26 EUR |
500+ | 0.19 EUR |
1000+ | 0.17 EUR |
2000+ | 0.15 EUR |
RN2905FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.14 EUR |
RN2905FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.65 EUR |
44+ | 0.4 EUR |
100+ | 0.26 EUR |
500+ | 0.19 EUR |
1000+ | 0.17 EUR |
TCR2EF25,LM(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2.5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP3414S(TP,E |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP3414S(TP,E |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
auf Bestellung 2464 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 8.89 EUR |
10+ | 6.65 EUR |
100+ | 5.34 EUR |
500+ | 4.83 EUR |
CRG09A,LQ(M |
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Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 400V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TK024N60Z1,S1F |
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Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600V 0.024OHM 10V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 33A, 10V
Power Dissipation (Max): 506W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.84mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 300 V
Description: N-CH MOSFET 600V 0.024OHM 10V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 33A, 10V
Power Dissipation (Max): 506W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.84mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 300 V
auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 23 EUR |
50+ | 13.36 EUR |
100+ | 12.53 EUR |
XCUZ18V,H3XHF(B |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.063 EUR |
XCUZ18V,H3XHF(B |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5824 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 0.32 EUR |
91+ | 0.19 EUR |
149+ | 0.12 EUR |
500+ | 0.087 EUR |
1000+ | 0.076 EUR |
7UL1G00NX,ELF |
Hersteller: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
7UL1G00NX,ELF |
Hersteller: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TRS30N120HB,S1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: 1200V30A SIC SCHOTTKY BARR DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 41A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: 1200V30A SIC SCHOTTKY BARR DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 41A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 23.97 EUR |
30+ | 14.77 EUR |
DCM341A01(AS,EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DCM341A01(AS,EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC74VCX164245ELF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 48-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 2
Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 48-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TBD62503AFG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TBD62503AFG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 723 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.29 EUR |
10+ | 2.43 EUR |
25+ | 2.22 EUR |
100+ | 1.98 EUR |
250+ | 1.87 EUR |
500+ | 1.8 EUR |
TBD62503AFWG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2000+ | 0.58 EUR |
TBD62503AFWG,EL |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
auf Bestellung 9374 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.64 EUR |
11+ | 1.62 EUR |
25+ | 1.35 EUR |
100+ | 1.05 EUR |
250+ | 0.91 EUR |
500+ | 0.82 EUR |
1000+ | 0.74 EUR |
TC74VCX16245(EL,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: 16-BIT TRANSCEIVER, TSSOP48
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Description: 16-BIT TRANSCEIVER, TSSOP48
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1SS361FV,L3XGF |
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Hersteller: Toshiba Semiconductor and Storage
Description: 80V/0.1 A SWITCHING DIODE, SOT-7
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
Description: 80V/0.1 A SWITCHING DIODE, SOT-7
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLX9910(TPL,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 13.5V
Turn On / Turn Off Time (Typ): 100µs, 500µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 13.5V
Turn On / Turn Off Time (Typ): 100µs, 500µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLX9910(TPL,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 13.5V
Turn On / Turn Off Time (Typ): 100µs, 500µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 13.5V
Turn On / Turn Off Time (Typ): 100µs, 500µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
auf Bestellung 2011 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.64 EUR |
10+ | 5.67 EUR |
100+ | 4.51 EUR |
500+ | 4 EUR |
1000+ | 3.83 EUR |
CMZ12(TE12L,Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 12V 2W MFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Description: DIODE ZENER 12V 2W MFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.29 EUR |
6000+ | 0.26 EUR |
9000+ | 0.24 EUR |
CMZ12(TE12L,Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 12V 2W MFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Description: DIODE ZENER 12V 2W MFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
auf Bestellung 10208 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.95 EUR |
28+ | 0.65 EUR |
100+ | 0.44 EUR |
500+ | 0.35 EUR |
1000+ | 0.32 EUR |
TB67S539SFTG(EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: 40V/2A 32 MICRO-STEP STEPPING MO
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: 40V/2A 32 MICRO-STEP STEPPING MO
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DCM341B01(AS,EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 2.94 EUR |
DCM341B01(AS,EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.4 EUR |
10+ | 4.06 EUR |
25+ | 3.72 EUR |
100+ | 3.35 EUR |
250+ | 3.17 EUR |
500+ | 3.07 EUR |
DCM341L01(AS,EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 2.94 EUR |
DCM341L01(AS,EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.4 EUR |
10+ | 4.06 EUR |
25+ | 3.72 EUR |
100+ | 3.35 EUR |
250+ | 3.17 EUR |
500+ | 3.07 EUR |
TCR3UF08A,LM |
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Hersteller: Toshiba Semiconductor and Storage
Description: 300 MA FIXED OUTPUT LDO REGULATO
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Over Current, Over Temperature
Description: 300 MA FIXED OUTPUT LDO REGULATO
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH