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TTC502,LF TTC502,LF Toshiba Semiconductor and Storage docget.jsp?did=70489&prodName=TTC502 Description: TRANS NPN 120V 1A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
auf Bestellung 6000 Stücke:
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3000+0.19 EUR
6000+0.17 EUR
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TTC502,LF TTC502,LF Toshiba Semiconductor and Storage docget.jsp?did=70489&prodName=TTC502 Description: TRANS NPN 120V 1A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
auf Bestellung 6664 Stücke:
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24+0.88 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
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TCR3LM195A,L3F Toshiba Semiconductor and Storage Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.95V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.425V @ 200mA
Protection Features: Over Current, Over Temperature
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TCR3LM195A,L3F Toshiba Semiconductor and Storage Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.95V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.425V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
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48+0.44 EUR
71+0.3 EUR
80+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
2500+0.18 EUR
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TC74HC02AFELF Toshiba Semiconductor and Storage Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 1932 Stücke:
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25+0.87 EUR
27+0.77 EUR
100+0.68 EUR
250+0.63 EUR
500+0.61 EUR
1000+0.6 EUR
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SSM6L807R,LF SSM6L807R,LF Toshiba Semiconductor and Storage docget.jsp?did=63987&prodName=SSM6L807R Description: MOSFET N/P-CH 30V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SSM6L807R,LF SSM6L807R,LF Toshiba Semiconductor and Storage docget.jsp?did=63987&prodName=SSM6L807R Description: MOSFET N/P-CH 30V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Produkt ist nicht verfügbar
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TK155E60Z1,S1X TK155E60Z1,S1X Toshiba Semiconductor and Storage TK155E60Z1_datasheet_en_20240725.pdf?did=159373&prodName=TK155E60Z1 Description: N-CH MOSFET 600 V 0.155 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 100 Stücke:
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3+9.82 EUR
50+5.11 EUR
100+4.65 EUR
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TPH2R70AR5,LQ TPH2R70AR5,LQ Toshiba Semiconductor and Storage TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5 Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10000 Stücke:
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5000+1.64 EUR
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TPH2R70AR5,LQ TPH2R70AR5,LQ Toshiba Semiconductor and Storage TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5 Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10954 Stücke:
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4+5.74 EUR
10+3.72 EUR
100+2.57 EUR
500+2.08 EUR
1000+2 EUR
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7UL1T08NX,ELF 7UL1T08NX,ELF Toshiba Semiconductor and Storage 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
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5000+0.14 EUR
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7UL1T08NX,ELF 7UL1T08NX,ELF Toshiba Semiconductor and Storage 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
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56+0.38 EUR
84+0.25 EUR
94+0.23 EUR
111+0.19 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
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HDWG51JXZSTB HDWG51JXZSTB Toshiba Semiconductor and Storage Toshiba_N300Pro-SalesSheet_English-Web.pdf Description: HDD 18TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 28 Stücke:
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1+990.48 EUR
10+897.95 EUR
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TK200V60Z1,LQ TK200V60Z1,LQ Toshiba Semiconductor and Storage TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1 Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
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2500+2.06 EUR
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TK200V60Z1,LQ TK200V60Z1,LQ Toshiba Semiconductor and Storage TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1 Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
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4+6.59 EUR
10+4.3 EUR
100+2.99 EUR
500+2.43 EUR
1000+2.4 EUR
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TK200U65Z5,RQ TK200U65Z5,RQ Toshiba Semiconductor and Storage TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5 Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
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2000+3.08 EUR
4000+3.03 EUR
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TK200U65Z5,RQ TK200U65Z5,RQ Toshiba Semiconductor and Storage TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5 Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
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10+6.01 EUR
100+4.26 EUR
500+3.71 EUR
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TK200V65Z5,LQ TK200V65Z5,LQ Toshiba Semiconductor and Storage TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5 Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
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2500+4.74 EUR
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TK200V65Z5,LQ TK200V65Z5,LQ Toshiba Semiconductor and Storage TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5 Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
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2+12.61 EUR
10+8.5 EUR
100+6.15 EUR
500+5.8 EUR
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TK200A65Z5,S4X TK200A65Z5,S4X Toshiba Semiconductor and Storage TK200A65Z5_datasheet_en_20240408.pdf?did=158595&prodName=TK200A65Z5 Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.06 EUR
50+5.88 EUR
100+5.38 EUR
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TK200E65Z5,S1X TK200E65Z5,S1X Toshiba Semiconductor and Storage TK200E65Z5_datasheet_en_20240408.pdf?did=158599&prodName=TK200E65Z5 Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
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2+11.35 EUR
50+6.05 EUR
100+5.53 EUR
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TCR5FM22A,RF TCR5FM22A,RF Toshiba Semiconductor and Storage TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
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TCR5FM22A,RF TCR5FM22A,RF Toshiba Semiconductor and Storage TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
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2SA1721OTE85LF Toshiba Semiconductor and Storage Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
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HDEPN20GEA51F Toshiba Semiconductor and Storage Description: 16TB SAS NEARLINE 4KN
Packaging: Bulk
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HDEPN10GEA51F Toshiba Semiconductor and Storage Description: 16TB SAS NEARLINE 512E
Packaging: Bulk
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2SK3074TE12LF 2SK3074TE12LF Toshiba Semiconductor and Storage docget.jsp?did=17914&prodName=2SK3074 Description: MOSF RF N CH 30V 1A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 630mW
Gain: 14.9dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-62
Voltage - Rated: 30 V
Voltage - Test: 9.6 V
Current - Test: 50 mA
Produkt ist nicht verfügbar
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DF3A6.8LCT,L3F DF3A6.8LCT,L3F Toshiba Semiconductor and Storage docget.jsp?did=883&prodName=DF3A6.8LCT Description: TVS DIODE CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Supplier Device Package: CST3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
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DF3A6.8LCT,L3F DF3A6.8LCT,L3F Toshiba Semiconductor and Storage docget.jsp?did=883&prodName=DF3A6.8LCT Description: TVS DIODE CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Supplier Device Package: CST3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
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HDWG51GXZSTB HDWG51GXZSTB Toshiba Semiconductor and Storage Toshiba_N300Pro-SalesSheet_English-Web.pdf Description: HDD 16TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 16TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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HDWG51EXZSTA Toshiba Semiconductor and Storage Description: 14 TB HDD SATA 3.5"
Packaging: Bulk
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CLH05(T6L,NKOD,Q) Toshiba Semiconductor and Storage CLH05.pdf Description: DIODE STANDARD 200V 5A LFLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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TMPM4GQF10FG Toshiba Semiconductor and Storage TMPM4GQF10FG_datasheet_en_20240531.pdf?did=139604&prodName=TMPM4GQF10FG Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 127
Produkt ist nicht verfügbar
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TMPM4GQF10XBG Toshiba Semiconductor and Storage TMPM4GQF10XBG_datasheet_en_20240531.pdf?did=139604&prodName=TMPM4GQF10XBG Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 145-VFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 145-VFBGA (12x12)
Number of I/O: 127
Produkt ist nicht verfügbar
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TMPM4NQF10FG Toshiba Semiconductor and Storage TMPM4NQF10FG_datasheet_en_20241129.pdf?did=139479&prodName=TMPM4NQF10FG Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 118
Produkt ist nicht verfügbar
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TMPM4NQF10XBG Toshiba Semiconductor and Storage TMPM4NQF10XBG_datasheet_en_20241129.pdf?did=139479&prodName=TMPM4NQF10XBG Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 145-VFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 145-VFBGA (12x12)
Number of I/O: 118
Produkt ist nicht verfügbar
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TPHR6704RL,LQ TPHR6704RL,LQ Toshiba Semiconductor and Storage TPHR6704RL_datasheet_en_20250702.pdf?did=163943&prodName=TPHR6704RL Description: N-CH MOSFET 40V 0.00067OHM SOP A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
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5000+2.02 EUR
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TPHR6704RL,LQ TPHR6704RL,LQ Toshiba Semiconductor and Storage TPHR6704RL_datasheet_en_20250702.pdf?did=163943&prodName=TPHR6704RL Description: N-CH MOSFET 40V 0.00067OHM SOP A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
auf Bestellung 9933 Stücke:
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XPH3R908QB,L1XHQ XPH3R908QB,L1XHQ Toshiba Semiconductor and Storage XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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XPH3R908QB,L1XHQ XPH3R908QB,L1XHQ Toshiba Semiconductor and Storage XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RN2421(TE85L,F) RN2421(TE85L,F) Toshiba Semiconductor and Storage RN2422_datasheet_en_20140301.pdf?did=18885&prodName=RN2422 Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN2421(TE85L,F) RN2421(TE85L,F) Toshiba Semiconductor and Storage RN2422_datasheet_en_20140301.pdf?did=18885&prodName=RN2422 Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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TC74ACT245FTEL Toshiba Semiconductor and Storage Description: IC TXRX 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 1914 Stücke:
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22+0.99 EUR
31+0.69 EUR
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TC7WBL3306CFK,L(CT TC7WBL3306CFK,L(CT Toshiba Semiconductor and Storage docgetjsp%20%281%29.pdf Description: IC SWITCH SPST X 2 19OHM 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 19Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 6ns, 6ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
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TC7WBL3306CFK,L(CT TC7WBL3306CFK,L(CT Toshiba Semiconductor and Storage docgetjsp%20%281%29.pdf Description: IC SWITCH SPST X 2 19OHM 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 19Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 6ns, 6ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
auf Bestellung 5970 Stücke:
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74+0.29 EUR
100+0.25 EUR
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1000+0.2 EUR
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TC7MBL3257CFK(EL) TC7MBL3257CFK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57109&prodName=TC7MBL3257CFK Description: IC MUX/DEMUX 4 X 2:1 16-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-VSSOP
Produkt ist nicht verfügbar
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TC7MBL3257CFK(EL) TC7MBL3257CFK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57109&prodName=TC7MBL3257CFK Description: IC MUX/DEMUX 4 X 2:1 16-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-VSSOP
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TW031V65C,LQ TW031V65C,LQ Toshiba Semiconductor and Storage TW031V65C_datasheet_en_20250205.pdf?did=161241&prodName=TW031V65C Description: N-CH SIC MOSFET, 650 V, 0.031 OH
Produkt ist nicht verfügbar
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TW031V65C,LQ TW031V65C,LQ Toshiba Semiconductor and Storage TW031V65C_datasheet_en_20250205.pdf?did=161241&prodName=TW031V65C Description: N-CH SIC MOSFET, 650 V, 0.031 OH
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SSM6K388NU,LF SSM6K388NU,LF Toshiba Semiconductor and Storage SSM6K388NU_datasheet_en_20250911.pdf?did=165121&prodName=SSM6K388NU Description: N-CH MOSFET, 60 V, 2 A, 82 M@10
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SSM6K388NU,LF SSM6K388NU,LF Toshiba Semiconductor and Storage SSM6K388NU_datasheet_en_20250911.pdf?did=165121&prodName=SSM6K388NU Description: N-CH MOSFET, 60 V, 2 A, 82 M@10
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CBS10F40,L3F CBS10F40,L3F Toshiba Semiconductor and Storage docget.jsp?did=53236&prodName=CBS10F40 Description: DIODE SCHOTTKY 40V 1A CST2B
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CBS10F40,L3F CBS10F40,L3F Toshiba Semiconductor and Storage docget.jsp?did=53236&prodName=CBS10F40 Description: DIODE SCHOTTKY 40V 1A CST2B
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TCR3LM095A,L3F Toshiba Semiconductor and Storage Description: OUTPUT LDO REGULATOR 300 MA FIXE
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TCR3LM095A,L3F Toshiba Semiconductor and Storage Description: OUTPUT LDO REGULATOR 300 MA FIXE
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TPM1R908QM,LQ TPM1R908QM,LQ Toshiba Semiconductor and Storage TPM1R908QM_datasheet_en_20250326.pdf?did=162575&prodName=TPM1R908QM Description: N-CH MOSFET, 80 V, 0.0019 @10V,
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TPM1R908QM,LQ TPM1R908QM,LQ Toshiba Semiconductor and Storage TPM1R908QM_datasheet_en_20250326.pdf?did=162575&prodName=TPM1R908QM Description: N-CH MOSFET, 80 V, 0.0019 @10V,
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DCL542H01(T,E(O Toshiba Semiconductor and Storage Description: DGTL ISOLTR 5KV 4CH GP 16-SOIC
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DCL542H01(T,E(O Toshiba Semiconductor and Storage Description: DGTL ISOLTR 5KV 4CH GP 16-SOIC
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DCL542L01(T,E(O Toshiba Semiconductor and Storage Description: DGTL ISOLTR 5KV 4CH GP 16-SOIC
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TTC502,LF docget.jsp?did=70489&prodName=TTC502
TTC502,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 1A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
auf Bestellung 6000 Stücke:
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3000+0.19 EUR
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TTC502,LF docget.jsp?did=70489&prodName=TTC502
TTC502,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 1A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
auf Bestellung 6664 Stücke:
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39+0.55 EUR
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TCR3LM195A,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.95V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.425V @ 200mA
Protection Features: Over Current, Over Temperature
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5000+0.17 EUR
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TCR3LM195A,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.95V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.425V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
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48+0.44 EUR
71+0.3 EUR
80+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
2500+0.18 EUR
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TC74HC02AFELF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 1932 Stücke:
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18+1.21 EUR
25+0.87 EUR
27+0.77 EUR
100+0.68 EUR
250+0.63 EUR
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1000+0.6 EUR
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SSM6L807R,LF docget.jsp?did=63987&prodName=SSM6L807R
SSM6L807R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Produkt ist nicht verfügbar
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SSM6L807R,LF docget.jsp?did=63987&prodName=SSM6L807R
SSM6L807R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Produkt ist nicht verfügbar
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TK155E60Z1,S1X TK155E60Z1_datasheet_en_20240725.pdf?did=159373&prodName=TK155E60Z1
TK155E60Z1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.155 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 100 Stücke:
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3+9.82 EUR
50+5.11 EUR
100+4.65 EUR
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TPH2R70AR5,LQ TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5
TPH2R70AR5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
5000+1.64 EUR
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TPH2R70AR5,LQ TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5
TPH2R70AR5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10954 Stücke:
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AnzahlPrivatkunde
4+5.74 EUR
10+3.72 EUR
100+2.57 EUR
500+2.08 EUR
1000+2 EUR
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7UL1T08NX,ELF 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX
7UL1T08NX,ELF
Hersteller: Toshiba Semiconductor and Storage
Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.14 EUR
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7UL1T08NX,ELF 7UL1T08NX_datasheet_en_20250602.pdf?did=163345&prodName=7UL1T08NX
7UL1T08NX,ELF
Hersteller: Toshiba Semiconductor and Storage
Description: ONE-GATE LOGIC, 2-INPUT/AND WITH
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.1V ~ 1.2V
Input Logic Level - Low: 0.35V ~ 0.5V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
84+0.25 EUR
94+0.23 EUR
111+0.19 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
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HDWG51JXZSTB Toshiba_N300Pro-SalesSheet_English-Web.pdf
HDWG51JXZSTB
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 28 Stücke:
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1+990.48 EUR
10+897.95 EUR
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TK200V60Z1,LQ TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1
TK200V60Z1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
2500+2.06 EUR
5000+1.96 EUR
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TK200V60Z1,LQ TK200V60Z1_datasheet_en_20250317.pdf?did=163189&prodName=TK200V60Z1
TK200V60Z1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.200 OHM DFN8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.59 EUR
10+4.3 EUR
100+2.99 EUR
500+2.43 EUR
1000+2.4 EUR
Mindestbestellmenge: 4 Stücke
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TK200U65Z5,RQ TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5
TK200U65Z5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+3.08 EUR
4000+3.03 EUR
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TK200U65Z5,RQ TK200U65Z5_datasheet_en_20240926.pdf?did=160159&prodName=TK200U65Z5
TK200U65Z5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650V 0.200OHM TOLL D
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.09 EUR
10+6.01 EUR
100+4.26 EUR
500+3.71 EUR
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TK200V65Z5,LQ TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5
TK200V65Z5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
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2500+4.74 EUR
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TK200V65Z5,LQ TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5
TK200V65Z5,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
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10+8.5 EUR
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TK200A65Z5,S4X TK200A65Z5_datasheet_en_20240408.pdf?did=158595&prodName=TK200A65Z5
TK200A65Z5,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
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50+5.88 EUR
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TK200E65Z5,S1X TK200E65Z5_datasheet_en_20240408.pdf?did=158599&prodName=TK200E65Z5
TK200E65Z5,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 100 Stücke:
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2+11.35 EUR
50+6.05 EUR
100+5.53 EUR
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TCR5FM22A,RF TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A
TCR5FM22A,RF
Hersteller: Toshiba Semiconductor and Storage
Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
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5000+0.26 EUR
10000+0.25 EUR
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TCR5FM22A,RF TCR5FM22A_datasheet_en_20250715.pdf?did=162261&prodName=TCR5FM22A
TCR5FM22A,RF
Hersteller: Toshiba Semiconductor and Storage
Description: 500 MA FIXED OUTPUT LDO , 2.2 V,
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Enable
Voltage Dropout (Max): 0.411V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
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34+0.63 EUR
49+0.43 EUR
55+0.38 EUR
100+0.33 EUR
250+0.31 EUR
500+0.29 EUR
1000+0.27 EUR
2500+0.26 EUR
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2SA1721OTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
auf Bestellung 2995 Stücke:
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20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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HDEPN20GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 16TB SAS NEARLINE 4KN
Packaging: Bulk
auf Bestellung 15 Stücke:
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1+1573.48 EUR
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HDEPN10GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 16TB SAS NEARLINE 512E
Packaging: Bulk
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2SK3074TE12LF docget.jsp?did=17914&prodName=2SK3074
2SK3074TE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 30V 1A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 630mW
Gain: 14.9dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-62
Voltage - Rated: 30 V
Voltage - Test: 9.6 V
Current - Test: 50 mA
Produkt ist nicht verfügbar
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DF3A6.8LCT,L3F docget.jsp?did=883&prodName=DF3A6.8LCT
DF3A6.8LCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Supplier Device Package: CST3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
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10000+0.11 EUR
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DF3A6.8LCT,L3F docget.jsp?did=883&prodName=DF3A6.8LCT
DF3A6.8LCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Supplier Device Package: CST3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
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34+0.63 EUR
55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
2000+0.14 EUR
5000+0.12 EUR
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HDWG51GXZSTB Toshiba_N300Pro-SalesSheet_English-Web.pdf
HDWG51GXZSTB
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 16TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 16TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 14 Stücke:
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1+947.47 EUR
10+856.48 EUR
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HDWG51EXZSTA
Hersteller: Toshiba Semiconductor and Storage
Description: 14 TB HDD SATA 3.5"
Packaging: Bulk
auf Bestellung 2 Stücke:
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1+896.11 EUR
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CLH05(T6L,NKOD,Q) CLH05.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 5A LFLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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TMPM4GQF10FG TMPM4GQF10FG_datasheet_en_20240531.pdf?did=139604&prodName=TMPM4GQF10FG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 127
Produkt ist nicht verfügbar
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TMPM4GQF10XBG TMPM4GQF10XBG_datasheet_en_20240531.pdf?did=139604&prodName=TMPM4GQF10XBG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 145-VFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 145-VFBGA (12x12)
Number of I/O: 127
Produkt ist nicht verfügbar
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TMPM4NQF10FG TMPM4NQF10FG_datasheet_en_20241129.pdf?did=139479&prodName=TMPM4NQF10FG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 118
Produkt ist nicht verfügbar
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TMPM4NQF10XBG TMPM4NQF10XBG_datasheet_en_20241129.pdf?did=139479&prodName=TMPM4NQF10XBG
Hersteller: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Package / Case: 145-VFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 145-VFBGA (12x12)
Number of I/O: 118
Produkt ist nicht verfügbar
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TPHR6704RL,LQ TPHR6704RL_datasheet_en_20250702.pdf?did=163943&prodName=TPHR6704RL
TPHR6704RL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 40V 0.00067OHM SOP A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
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5000+2.02 EUR
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TPHR6704RL,LQ TPHR6704RL_datasheet_en_20250702.pdf?did=163943&prodName=TPHR6704RL
TPHR6704RL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 40V 0.00067OHM SOP A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
auf Bestellung 9933 Stücke:
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4+6.7 EUR
10+4.37 EUR
100+3.05 EUR
500+2.49 EUR
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XPH3R908QB,L1XHQ XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB
XPH3R908QB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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XPH3R908QB,L1XHQ XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB
XPH3R908QB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RN2421(TE85L,F) RN2422_datasheet_en_20140301.pdf?did=18885&prodName=RN2422
RN2421(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN2421(TE85L,F) RN2422_datasheet_en_20140301.pdf?did=18885&prodName=RN2422
RN2421(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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TC74ACT245FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 1914 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
31+0.69 EUR
34+0.62 EUR
100+0.54 EUR
250+0.5 EUR
500+0.48 EUR
1000+0.46 EUR
Mindestbestellmenge: 22 Stücke
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TC7WBL3306CFK,L(CT docgetjsp%20%281%29.pdf
TC7WBL3306CFK,L(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST X 2 19OHM 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 19Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 6ns, 6ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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TC7WBL3306CFK,L(CT docgetjsp%20%281%29.pdf
TC7WBL3306CFK,L(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST X 2 19OHM 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 19Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 6ns, 6ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
65+0.32 EUR
74+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.21 EUR
1000+0.2 EUR
Mindestbestellmenge: 46 Stücke
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TC7MBL3257CFK(EL) docget.jsp?did=57109&prodName=TC7MBL3257CFK
TC7MBL3257CFK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 2:1 16-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-VSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TC7MBL3257CFK(EL) docget.jsp?did=57109&prodName=TC7MBL3257CFK
TC7MBL3257CFK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 2:1 16-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-VSSOP
auf Bestellung 2439 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
23+0.92 EUR
26+0.82 EUR
100+0.71 EUR
250+0.67 EUR
500+0.64 EUR
1000+0.63 EUR
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TW031V65C,LQ TW031V65C_datasheet_en_20250205.pdf?did=161241&prodName=TW031V65C
TW031V65C,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH SIC MOSFET, 650 V, 0.031 OH
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TW031V65C,LQ TW031V65C_datasheet_en_20250205.pdf?did=161241&prodName=TW031V65C
TW031V65C,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH SIC MOSFET, 650 V, 0.031 OH
auf Bestellung 2429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.73 EUR
10+19.5 EUR
100+16.34 EUR
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SSM6K388NU,LF SSM6K388NU_datasheet_en_20250911.pdf?did=165121&prodName=SSM6K388NU
SSM6K388NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 60 V, 2 A, 82 M@10
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
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SSM6K388NU,LF SSM6K388NU_datasheet_en_20250911.pdf?did=165121&prodName=SSM6K388NU
SSM6K388NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 60 V, 2 A, 82 M@10
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 30 Stücke
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CBS10F40,L3F docget.jsp?did=53236&prodName=CBS10F40
CBS10F40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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CBS10F40,L3F docget.jsp?did=53236&prodName=CBS10F40
CBS10F40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
auf Bestellung 7231 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
45+0.46 EUR
100+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.18 EUR
5000+0.15 EUR
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TCR3LM095A,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.17 EUR
Mindestbestellmenge: 10000 Stücke
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TCR3LM095A,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
71+0.3 EUR
80+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
2500+0.18 EUR
Mindestbestellmenge: 48 Stücke
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TPM1R908QM,LQ TPM1R908QM_datasheet_en_20250326.pdf?did=162575&prodName=TPM1R908QM
TPM1R908QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 80 V, 0.0019 @10V,
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.7 EUR
Mindestbestellmenge: 5000 Stücke
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TPM1R908QM,LQ TPM1R908QM_datasheet_en_20250326.pdf?did=162575&prodName=TPM1R908QM
TPM1R908QM,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 80 V, 0.0019 @10V,
auf Bestellung 8722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.9 EUR
10+3.83 EUR
100+2.65 EUR
500+2.15 EUR
1000+2.08 EUR
Mindestbestellmenge: 4 Stücke
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DCL542H01(T,E(O
Hersteller: Toshiba Semiconductor and Storage
Description: DGTL ISOLTR 5KV 4CH GP 16-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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DCL542H01(T,E(O
Hersteller: Toshiba Semiconductor and Storage
Description: DGTL ISOLTR 5KV 4CH GP 16-SOIC
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.97 EUR
10+8.22 EUR
100+6.6 EUR
500+5.9 EUR
Mindestbestellmenge: 2 Stücke
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DCL542L01(T,E(O
Hersteller: Toshiba Semiconductor and Storage
Description: DGTL ISOLTR 5KV 4CH GP 16-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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