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TLX9152M(TPL,F TLX9152M(TPL,F Toshiba Semiconductor and Storage docget.jsp?did=158243&prodName=TLX9152M Description: PHOTORELAY ROHS AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 16-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 400 Ohms
Qualification: AEC-Q101
auf Bestellung 1440 Stücke:
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2+9.98 EUR
10+7.52 EUR
100+6.06 EUR
500+5.56 EUR
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TLP3475W(TP,E TLP3475W(TP,E Toshiba Semiconductor and Storage datasheet_en_20230824.pdf?did=153823 Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 3000 Stücke:
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3000+5.78 EUR
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TLP3475W(TP,E TLP3475W(TP,E Toshiba Semiconductor and Storage datasheet_en_20230824.pdf?did=153823 Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 3880 Stücke:
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2+11.4 EUR
10+8.63 EUR
100+7.01 EUR
500+6.3 EUR
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TLP3483(TP,E Toshiba Semiconductor and Storage Description: PHOTORELAY
Packaging: Tape & Reel (TR)
Package / Case: 4-LDFN
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 350 mA
Supplier Device Package: S-VSON4T (3.4x2.1)
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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TLP176D(TP,M,F) TLP176D(TP,M,F) Toshiba Semiconductor and Storage docget.jsp?did=17004&prodName=TLP176D Description: PHOTORELAY MOSFET OUT 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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TLP223GA(F TLP223GA(F Toshiba Semiconductor and Storage datasheet_en_20220202.pdf?did=140401 Description: PHOTORELAY 400V 6-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Produkt ist nicht verfügbar
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TK4R9E15Q5,S1X TK4R9E15Q5,S1X Toshiba Semiconductor and Storage TK4R9E15Q5_datasheet_en_20240617.pdf?did=158311&prodName=TK4R9E15Q5 Description: 150V UMOS10-HSD TO-220 4.9MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V
auf Bestellung 132 Stücke:
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50+5.15 EUR
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TK115N65Z5,S1F TK115N65Z5,S1F Toshiba Semiconductor and Storage TK115N65Z5_datasheet_en_20240215.pdf?did=157728&prodName=TK115N65Z5 Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
auf Bestellung 60 Stücke:
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TMPM366FYXBG Toshiba Semiconductor and Storage TMPM366FxXBG_7-17-13.pdf Description: IC MCU 32BIT 256KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 73
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TMPM366FDXBG Toshiba Semiconductor and Storage TMPM366FxXBG_7-17-13.pdf Description: IC MCU 32BIT 512KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, PWM, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 74
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TMPM37AFSQG,EL Toshiba Semiconductor and Storage Description: IC MCU 32BIT 64KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, PWM, Voltage Detect, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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RN2418,LF RN2418,LF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN2418,LF RN2418,LF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2947 Stücke:
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72+0.25 EUR
124+0.14 EUR
200+0.088 EUR
500+0.064 EUR
1000+0.056 EUR
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RN1418,LF RN1418,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1418 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN1418,LF RN1418,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1418 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 171 Stücke:
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72+0.25 EUR
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74HC00D 74HC00D Toshiba Semiconductor and Storage docget.jsp?did=36764&prodName=74HC00D Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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74HC00D 74HC00D Toshiba Semiconductor and Storage docget.jsp?did=36764&prodName=74HC00D Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 12543 Stücke:
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49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
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CMH07,LQ CMH07,LQ Toshiba Semiconductor and Storage CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07 Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 6000 Stücke:
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3000+0.29 EUR
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CMH07,LQ CMH07,LQ Toshiba Semiconductor and Storage CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07 Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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15+1.23 EUR
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500+0.38 EUR
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2SA1313-Y,LF 2SA1313-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19265&prodName=2SA1313 Description: TRANS PNP 50V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 6523 Stücke:
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TC74HC123AF TC74HC123AF Toshiba Semiconductor and Storage TC74HC123AF_datasheet_en_20161202.pdf?did=8561&prodName=TC74HC123AF Description: SOP16 DUAL MONOSTABLE MULTIVIBRA
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 23 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOP
Voltage - Supply: 2 V ~ 6 V
Produkt ist nicht verfügbar
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TLX9152M(TPL,F docget.jsp?did=158243&prodName=TLX9152M
TLX9152M(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY ROHS AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 16-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 400 Ohms
Qualification: AEC-Q101
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.98 EUR
10+7.52 EUR
100+6.06 EUR
500+5.56 EUR
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TLP3475W(TP,E datasheet_en_20230824.pdf?did=153823
TLP3475W(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+5.78 EUR
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TLP3475W(TP,E datasheet_en_20230824.pdf?did=153823
TLP3475W(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 3880 Stücke:
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Anzahl Preis
2+11.4 EUR
10+8.63 EUR
100+7.01 EUR
500+6.3 EUR
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TLP3483(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY
Packaging: Tape & Reel (TR)
Package / Case: 4-LDFN
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 350 mA
Supplier Device Package: S-VSON4T (3.4x2.1)
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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TLP176D(TP,M,F) docget.jsp?did=17004&prodName=TLP176D
TLP176D(TP,M,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY MOSFET OUT 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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TLP223GA(F datasheet_en_20220202.pdf?did=140401
TLP223GA(F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY 400V 6-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Produkt ist nicht verfügbar
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TK4R9E15Q5,S1X TK4R9E15Q5_datasheet_en_20240617.pdf?did=158311&prodName=TK4R9E15Q5
TK4R9E15Q5,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: 150V UMOS10-HSD TO-220 4.9MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.51 EUR
50+5.15 EUR
100+5.05 EUR
Mindestbestellmenge: 3
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TK115N65Z5,S1F TK115N65Z5_datasheet_en_20240215.pdf?did=157728&prodName=TK115N65Z5
TK115N65Z5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
auf Bestellung 60 Stücke:
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Anzahl Preis
2+10.28 EUR
30+5.9 EUR
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TMPM366FYXBG TMPM366FxXBG_7-17-13.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 73
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TMPM366FDXBG TMPM366FxXBG_7-17-13.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 512KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, PWM, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 74
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TMPM37AFSQG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 64KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, PWM, Voltage Detect, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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RN2418,LF docget.jsp?did=18883&prodName=RN2418
RN2418,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN2418,LF docget.jsp?did=18883&prodName=RN2418
RN2418,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
124+0.14 EUR
200+0.088 EUR
500+0.064 EUR
1000+0.056 EUR
Mindestbestellmenge: 72
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RN1418,LF docget.jsp?did=18796&prodName=RN1418
RN1418,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN1418,LF docget.jsp?did=18796&prodName=RN1418
RN1418,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
124+0.14 EUR
Mindestbestellmenge: 72
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74HC00D docget.jsp?did=36764&prodName=74HC00D
74HC00D
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 12500 Stücke:
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Anzahl Preis
2500+0.22 EUR
5000+0.21 EUR
12500+0.2 EUR
Mindestbestellmenge: 2500
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74HC00D docget.jsp?did=36764&prodName=74HC00D
74HC00D
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 12543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 34
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CMH07,LQ CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07
CMH07,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000
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CMH07,LQ CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07
CMH07,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
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2SA1313-Y,LF docget.jsp?did=19265&prodName=2SA1313
2SA1313-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 6523 Stücke:
Lieferzeit 10-14 Tag (e)
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TC74HC123AF TC74HC123AF_datasheet_en_20161202.pdf?did=8561&prodName=TC74HC123AF
TC74HC123AF
Hersteller: Toshiba Semiconductor and Storage
Description: SOP16 DUAL MONOSTABLE MULTIVIBRA
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 23 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOP
Voltage - Supply: 2 V ~ 6 V
Produkt ist nicht verfügbar
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