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TLP3083F(TP4,F TLP3083F(TP4,F Toshiba Semiconductor and Storage docget.jsp?did=30348&prodName=TLP3083F Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 5951 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+2.03 EUR
100+1.54 EUR
500+1.33 EUR
Mindestbestellmenge: 7
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CRG07(TE85L,Q,M) CRG07(TE85L,Q,M) Toshiba Semiconductor and Storage Description: DIODE GEN PURP 400V 700MA S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3000 Stücke:
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3000+0.14 EUR
Mindestbestellmenge: 3000
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CRG07(TE85L,Q,M) CRG07(TE85L,Q,M) Toshiba Semiconductor and Storage Description: DIODE GEN PURP 400V 700MA S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 4340 Stücke:
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29+0.62 EUR
40+0.44 EUR
100+0.22 EUR
500+0.2 EUR
1000+0.15 EUR
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DCL541B01(T,E DCL541B01(T,E Toshiba Semiconductor and Storage DCL541B01_datasheet_en_20230427.pdf?did=140763&prodName=DCL541B01 Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Produkt ist nicht verfügbar
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DCL541B01(T,E DCL541B01(T,E Toshiba Semiconductor and Storage DCL541B01_datasheet_en_20230427.pdf?did=140763&prodName=DCL541B01 Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1465 Stücke:
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2+10.24 EUR
10+7.24 EUR
100+5.93 EUR
500+5 EUR
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DCL541A01(T,E DCL541A01(T,E Toshiba Semiconductor and Storage datasheet_en_20230427.pdf?did=140763 Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Produkt ist nicht verfügbar
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DCL541A01(T,E DCL541A01(T,E Toshiba Semiconductor and Storage datasheet_en_20230427.pdf?did=140763 Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1448 Stücke:
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10+7.24 EUR
100+5.93 EUR
500+5 EUR
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TLP3083F(LF4,F TLP3083F(LF4,F Toshiba Semiconductor and Storage TLP3083F_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083F Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Tube
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 50 Stücke:
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6+3.27 EUR
50+1.65 EUR
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CMH04(TE12L,Q,M) CMH04(TE12L,Q,M) Toshiba Semiconductor and Storage CMH04_datasheet_en_20171225.pdf?did=20250&prodName=CMH04 Description: DIODE GEN PURP 200V 1A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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CMH04(TE12L,Q,M) CMH04(TE12L,Q,M) Toshiba Semiconductor and Storage CMH04_datasheet_en_20171225.pdf?did=20250&prodName=CMH04 Description: DIODE GEN PURP 200V 1A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1507 Stücke:
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20+0.92 EUR
32+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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TCD1103GFG(8Z,AA2) Toshiba Semiconductor and Storage TCD1103GFG.pdf Description: IMAGE SENSOR CCD 16SMD
Packaging: Tray
Package / Case: 16-GLCC Module
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 3V ~ 4V
Pixel Size: 5.5µm x 64µm
Supplier Device Package: 16-GLCC (15.2x6)
auf Bestellung 24 Stücke:
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1+24.87 EUR
5+22.63 EUR
10+21.79 EUR
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CRS10I30C(TE85L,QM CRS10I30C(TE85L,QM Toshiba Semiconductor and Storage CRS10I30C_datasheet_en_20140221.pdf?did=14909&prodName=CRS10I30C Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 3000 Stücke:
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3000+0.19 EUR
Mindestbestellmenge: 3000
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CRS10I30C(TE85L,QM CRS10I30C(TE85L,QM Toshiba Semiconductor and Storage CRS10I30C_datasheet_en_20140221.pdf?did=14909&prodName=CRS10I30C Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 7404 Stücke:
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25+0.7 EUR
33+0.55 EUR
100+0.33 EUR
500+0.31 EUR
1000+0.21 EUR
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TCKE903NL,RF TCKE903NL,RF Toshiba Semiconductor and Storage docget.jsp?did=157593&prodName=TCKE903NL Description: EFUSE IC , 4A/23V FAST PROTECTIO
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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TCKE903NL,RF TCKE903NL,RF Toshiba Semiconductor and Storage docget.jsp?did=157593&prodName=TCKE903NL Description: EFUSE IC , 4A/23V FAST PROTECTIO
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
auf Bestellung 2326 Stücke:
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11+1.6 EUR
16+1.16 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.8 EUR
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TCKE905ANA,RF TCKE905ANA,RF Toshiba Semiconductor and Storage docget.jsp?did=157593&prodName=TCKE905ANA Description: EFUSE IC 4A/23V FAST PROTECTION
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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TCKE905ANA,RF TCKE905ANA,RF Toshiba Semiconductor and Storage docget.jsp?did=157593&prodName=TCKE905ANA Description: EFUSE IC 4A/23V FAST PROTECTION
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
auf Bestellung 2446 Stücke:
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11+1.6 EUR
16+1.16 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.8 EUR
Mindestbestellmenge: 11
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7UL3G17FK,LF 7UL3G17FK,LF Toshiba Semiconductor and Storage docget.jsp?did=147409&prodName=7UL3G17FK Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 3000 Stücke:
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3000+0.18 EUR
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7UL3G17FK,LF 7UL3G17FK,LF Toshiba Semiconductor and Storage docget.jsp?did=147409&prodName=7UL3G17FK Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 5935 Stücke:
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20+0.88 EUR
34+0.52 EUR
42+0.43 EUR
100+0.32 EUR
250+0.27 EUR
500+0.24 EUR
1000+0.21 EUR
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TC74VHC541FK(EL,K) TC74VHC541FK(EL,K) Toshiba Semiconductor and Storage docget.jsp?did=18091&prodName=TC74VHC541FK Description: IC BUFF NON-INVERT 5.5V 20-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
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2500+0.37 EUR
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TC74VHC541FK(EL,K) TC74VHC541FK(EL,K) Toshiba Semiconductor and Storage docget.jsp?did=18091&prodName=TC74VHC541FK Description: IC BUFF NON-INVERT 5.5V 20-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
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21+0.84 EUR
30+0.6 EUR
33+0.54 EUR
100+0.47 EUR
250+0.44 EUR
500+0.42 EUR
1000+0.4 EUR
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TCR3DF40,LM(CT TCR3DF40,LM(CT Toshiba Semiconductor and Storage TCR3DF_Series_11-15-23.pdf Description: IC REG LINEAR 4V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 3000 Stücke:
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3000+0.14 EUR
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TCR3DF40,LM(CT TCR3DF40,LM(CT Toshiba Semiconductor and Storage TCR3DF_Series_11-15-23.pdf Description: IC REG LINEAR 4V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 4505 Stücke:
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23+0.77 EUR
31+0.58 EUR
35+0.51 EUR
100+0.33 EUR
250+0.27 EUR
500+0.22 EUR
1000+0.17 EUR
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TCR3DG18,LF TCR3DG18,LF Toshiba Semiconductor and Storage datasheet_en_20231101.pdf?did=36247 Description: IC REG LINEAR 1.8V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.365V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DG18,LF TCR3DG18,LF Toshiba Semiconductor and Storage datasheet_en_20231101.pdf?did=36247 Description: IC REG LINEAR 1.8V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.365V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 4793 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
50+0.36 EUR
54+0.33 EUR
100+0.24 EUR
250+0.22 EUR
500+0.18 EUR
1000+0.14 EUR
2500+0.13 EUR
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TK60S06K3L(T6L1,NQ TK60S06K3L(T6L1,NQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
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TK60S06K3L(T6L1,NQ TK60S06K3L(T6L1,NQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
auf Bestellung 1755 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
10+2.23 EUR
100+1.78 EUR
500+1.5 EUR
1000+1.28 EUR
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TCR3DM25,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DM25,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3874 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
31+0.57 EUR
35+0.51 EUR
100+0.36 EUR
250+0.3 EUR
500+0.24 EUR
1000+0.19 EUR
2500+0.17 EUR
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TPN2R805PL,L1Q TPN2R805PL,L1Q Toshiba Semiconductor and Storage TPN2R805PL_datasheet_en_20191030.pdf?did=53831&prodName=TPN2R805PL Description: MOSFET N-CH 45V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
Produkt ist nicht verfügbar
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TPN2R805PL,L1Q TPN2R805PL,L1Q Toshiba Semiconductor and Storage TPN2R805PL_datasheet_en_20191030.pdf?did=53831&prodName=TPN2R805PL Description: MOSFET N-CH 45V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
auf Bestellung 4661 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.59 EUR
Mindestbestellmenge: 9
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TPW3R70APL,L1Q TPW3R70APL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=59527&prodName=TPW3R70APL Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Produkt ist nicht verfügbar
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TPW3R70APL,L1Q TPW3R70APL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=59527&prodName=TPW3R70APL Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 3174 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.21 EUR
10+3.6 EUR
100+2.51 EUR
500+2.21 EUR
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TJ15S06M3L,LXHQ TJ15S06M3L,LXHQ Toshiba Semiconductor and Storage TJ15S06M3L_datasheet_en_20200624.pdf?did=22424&prodName=TJ15S06M3L Description: MOSFET P-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.66 EUR
4000+0.61 EUR
Mindestbestellmenge: 2000
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TJ15S06M3L,LXHQ TJ15S06M3L,LXHQ Toshiba Semiconductor and Storage TJ15S06M3L_datasheet_en_20200624.pdf?did=22424&prodName=TJ15S06M3L Description: MOSFET P-CH 60V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6014 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.39 EUR
12+1.52 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
Mindestbestellmenge: 8
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DF6S25P3NU,LF(B Toshiba Semiconductor and Storage Description: LF ESD PROTECTION DIODES 21V, SO
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 650pF @ 1MHz
Current - Peak Pulse (10/1000µs): 110A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: 6-UDFNB (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 5060W (5.06kW)
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.36 EUR
6000+0.34 EUR
Mindestbestellmenge: 3000
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DF6S25P3NU,LF(B Toshiba Semiconductor and Storage Description: LF ESD PROTECTION DIODES 21V, SO
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 650pF @ 1MHz
Current - Peak Pulse (10/1000µs): 110A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: 6-UDFNB (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 5060W (5.06kW)
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
22+0.83 EUR
25+0.78 EUR
100+0.63 EUR
250+0.59 EUR
500+0.5 EUR
1000+0.4 EUR
Mindestbestellmenge: 19
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HN1B01FU-GR,LXHF HN1B01FU-GR,LXHF Toshiba Semiconductor and Storage HN1B01FU_datasheet_en_20220311.pdf?did=19148&prodName=HN1B01FU Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.074 EUR
Mindestbestellmenge: 3000
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HN1B01FU-GR,LXHF HN1B01FU-GR,LXHF Toshiba Semiconductor and Storage HN1B01FU_datasheet_en_20220311.pdf?did=19148&prodName=HN1B01FU Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5948 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
62+0.29 EUR
122+0.14 EUR
500+0.12 EUR
1000+0.088 EUR
Mindestbestellmenge: 44
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HN1B01FU-Y,LXHF HN1B01FU-Y,LXHF Toshiba Semiconductor and Storage HN1B01FU_datasheet_en_20220311.pdf?did=19148&prodName=HN1B01FU Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HN1B01FU-Y,LXHF HN1B01FU-Y,LXHF Toshiba Semiconductor and Storage HN1B01FU_datasheet_en_20220311.pdf?did=19148&prodName=HN1B01FU Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5778 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
62+0.29 EUR
122+0.14 EUR
500+0.12 EUR
1000+0.088 EUR
Mindestbestellmenge: 44
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RN1911,LXHF(CT RN1911,LXHF(CT Toshiba Semiconductor and Storage datasheet_en_20211223.pdf?did=18828 Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1911,LXHF(CT RN1911,LXHF(CT Toshiba Semiconductor and Storage datasheet_en_20211223.pdf?did=18828 Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
41+0.43 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.16 EUR
Mindestbestellmenge: 33
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RN4991FE,LXHF(CT RN4991FE,LXHF(CT Toshiba Semiconductor and Storage RN4991FE_datasheet_en_20210818.pdf?did=19063&prodName=RN4991FE Description: AUTO AEC-Q TR NPN + PNP Q1BSR=10
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
Mindestbestellmenge: 4000
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RN4991FE,LXHF(CT RN4991FE,LXHF(CT Toshiba Semiconductor and Storage RN4991FE_datasheet_en_20210818.pdf?did=19063&prodName=RN4991FE Description: AUTO AEC-Q TR NPN + PNP Q1BSR=10
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
43+0.41 EUR
100+0.21 EUR
500+0.18 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 31
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RN4911,LXHF(CT RN4911,LXHF(CT Toshiba Semiconductor and Storage RN4911_datasheet_en_20210824.pdf?did=18970&prodName=RN4911 Description: AUTO AEC-Q TR PNP+NPN BRT Q1BSR=
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
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RN4911,LXHF(CT RN4911,LXHF(CT Toshiba Semiconductor and Storage RN4911_datasheet_en_20210824.pdf?did=18970&prodName=RN4911 Description: AUTO AEC-Q TR PNP+NPN BRT Q1BSR=
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
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RN2910,LXHF(CT RN2910,LXHF(CT Toshiba Semiconductor and Storage datasheet_en_20211223.pdf?did=18911 Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
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RN2910,LXHF(CT RN2910,LXHF(CT Toshiba Semiconductor and Storage datasheet_en_20211223.pdf?did=18911 Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
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CMS20I40A(TE12L,QM CMS20I40A(TE12L,QM Toshiba Semiconductor and Storage CMS20I40A_datasheet_en_20140408.pdf?did=15141&prodName=CMS20I40A Description: DIODE SCHOTTKY 40V 2A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.31 EUR
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CRS20I30B(TE85L,QM CRS20I30B(TE85L,QM Toshiba Semiconductor and Storage CRS20I30B_datasheet_en_20140221.pdf?did=14944&prodName=CRS20I30B Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.21 EUR
Mindestbestellmenge: 3000
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CRS20I30B(TE85L,QM CRS20I30B(TE85L,QM Toshiba Semiconductor and Storage CRS20I30B_datasheet_en_20140221.pdf?did=14944&prodName=CRS20I30B Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
30+0.59 EUR
100+0.36 EUR
500+0.33 EUR
1000+0.22 EUR
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CRS20I40B(TE85L,QM CRS20I40B(TE85L,QM Toshiba Semiconductor and Storage CRS20I40B_datasheet_en_20190909.pdf?did=15106&prodName=CRS20I40B Description: DIODE SCHOTTKY 40V 2A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.21 EUR
Mindestbestellmenge: 3000
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CRS20I40B(TE85L,QM CRS20I40B(TE85L,QM Toshiba Semiconductor and Storage CRS20I40B_datasheet_en_20190909.pdf?did=15106&prodName=CRS20I40B Description: DIODE SCHOTTKY 40V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 3538 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
29+0.61 EUR
100+0.36 EUR
500+0.34 EUR
1000+0.23 EUR
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CRS20I30A(TE85L,QM CRS20I30A(TE85L,QM Toshiba Semiconductor and Storage CRS20I30A_datasheet_en_20110506.pdf?did=2134&prodName=CRS20I30A Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Produkt ist nicht verfügbar
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CRS20I30A(TE85L,QM CRS20I30A(TE85L,QM Toshiba Semiconductor and Storage CRS20I30A_datasheet_en_20110506.pdf?did=2134&prodName=CRS20I30A Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
29+0.61 EUR
100+0.37 EUR
500+0.34 EUR
1000+0.23 EUR
Mindestbestellmenge: 23
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CMS20I30A(TE12L,QM CMS20I30A(TE12L,QM Toshiba Semiconductor and Storage Description: DIODE SCHOTTKY 30V 2A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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CMS20I30A(TE12L,QM CMS20I30A(TE12L,QM Toshiba Semiconductor and Storage Description: DIODE SCHOTTKY 30V 2A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
23+0.77 EUR
100+0.53 EUR
500+0.42 EUR
1000+0.34 EUR
Mindestbestellmenge: 20
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CRS20I40A(TE85L,QM CRS20I40A(TE85L,QM Toshiba Semiconductor and Storage CRS20I40A_datasheet_en_20140328.pdf?did=15096&prodName=CRS20I40A Description: DIODE SCHOTTKY 40V 2A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
Produkt ist nicht verfügbar
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CRS20I40A(TE85L,QM CRS20I40A(TE85L,QM Toshiba Semiconductor and Storage CRS20I40A_datasheet_en_20140328.pdf?did=15096&prodName=CRS20I40A Description: DIODE SCHOTTKY 40V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
30+0.6 EUR
100+0.36 EUR
500+0.33 EUR
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TLP3083F(TP4,F docget.jsp?did=30348&prodName=TLP3083F
TLP3083F(TP4,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 5951 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+2.03 EUR
100+1.54 EUR
500+1.33 EUR
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CRG07(TE85L,Q,M)
CRG07(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 700MA S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
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CRG07(TE85L,Q,M)
CRG07(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 700MA S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 4340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
40+0.44 EUR
100+0.22 EUR
500+0.2 EUR
1000+0.15 EUR
Mindestbestellmenge: 29
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DCL541B01(T,E DCL541B01_datasheet_en_20230427.pdf?did=140763&prodName=DCL541B01
DCL541B01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Produkt ist nicht verfügbar
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DCL541B01(T,E DCL541B01_datasheet_en_20230427.pdf?did=140763&prodName=DCL541B01
DCL541B01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.24 EUR
10+7.24 EUR
100+5.93 EUR
500+5 EUR
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DCL541A01(T,E datasheet_en_20230427.pdf?did=140763
DCL541A01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Produkt ist nicht verfügbar
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DCL541A01(T,E datasheet_en_20230427.pdf?did=140763
DCL541A01(T,E
Hersteller: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
auf Bestellung 1448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.24 EUR
10+7.24 EUR
100+5.93 EUR
500+5 EUR
Mindestbestellmenge: 2
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TLP3083F(LF4,F TLP3083F_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083F
TLP3083F(LF4,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Tube
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
50+1.65 EUR
Mindestbestellmenge: 6
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CMH04(TE12L,Q,M) CMH04_datasheet_en_20171225.pdf?did=20250&prodName=CMH04
CMH04(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 1A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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CMH04(TE12L,Q,M) CMH04_datasheet_en_20171225.pdf?did=20250&prodName=CMH04
CMH04(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 1A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1507 Stücke:
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Anzahl Preis
20+0.92 EUR
32+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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TCD1103GFG(8Z,AA2) TCD1103GFG.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IMAGE SENSOR CCD 16SMD
Packaging: Tray
Package / Case: 16-GLCC Module
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 3V ~ 4V
Pixel Size: 5.5µm x 64µm
Supplier Device Package: 16-GLCC (15.2x6)
auf Bestellung 24 Stücke:
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Anzahl Preis
1+24.87 EUR
5+22.63 EUR
10+21.79 EUR
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CRS10I30C(TE85L,QM CRS10I30C_datasheet_en_20140221.pdf?did=14909&prodName=CRS10I30C
CRS10I30C(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.19 EUR
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CRS10I30C(TE85L,QM CRS10I30C_datasheet_en_20140221.pdf?did=14909&prodName=CRS10I30C
CRS10I30C(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 7404 Stücke:
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Anzahl Preis
25+0.7 EUR
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500+0.31 EUR
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TCKE903NL,RF docget.jsp?did=157593&prodName=TCKE903NL
TCKE903NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: EFUSE IC , 4A/23V FAST PROTECTIO
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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TCKE903NL,RF docget.jsp?did=157593&prodName=TCKE903NL
TCKE903NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: EFUSE IC , 4A/23V FAST PROTECTIO
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
auf Bestellung 2326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
16+1.16 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
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TCKE905ANA,RF docget.jsp?did=157593&prodName=TCKE905ANA
TCKE905ANA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: EFUSE IC 4A/23V FAST PROTECTION
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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TCKE905ANA,RF docget.jsp?did=157593&prodName=TCKE905ANA
TCKE905ANA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: EFUSE IC 4A/23V FAST PROTECTION
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
auf Bestellung 2446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
16+1.16 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.8 EUR
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7UL3G17FK,LF docget.jsp?did=147409&prodName=7UL3G17FK
7UL3G17FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.18 EUR
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7UL3G17FK,LF docget.jsp?did=147409&prodName=7UL3G17FK
7UL3G17FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
auf Bestellung 5935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
34+0.52 EUR
42+0.43 EUR
100+0.32 EUR
250+0.27 EUR
500+0.24 EUR
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TC74VHC541FK(EL,K) docget.jsp?did=18091&prodName=TC74VHC541FK
TC74VHC541FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF NON-INVERT 5.5V 20-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+0.37 EUR
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TC74VHC541FK(EL,K) docget.jsp?did=18091&prodName=TC74VHC541FK
TC74VHC541FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF NON-INVERT 5.5V 20-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-VSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
30+0.6 EUR
33+0.54 EUR
100+0.47 EUR
250+0.44 EUR
500+0.42 EUR
1000+0.4 EUR
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TCR3DF40,LM(CT TCR3DF_Series_11-15-23.pdf
TCR3DF40,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 3000 Stücke:
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3000+0.14 EUR
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TCR3DF40,LM(CT TCR3DF_Series_11-15-23.pdf
TCR3DF40,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 4505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
31+0.58 EUR
35+0.51 EUR
100+0.33 EUR
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TCR3DG18,LF datasheet_en_20231101.pdf?did=36247
TCR3DG18,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.365V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DG18,LF datasheet_en_20231101.pdf?did=36247
TCR3DG18,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.365V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 4793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
50+0.36 EUR
54+0.33 EUR
100+0.24 EUR
250+0.22 EUR
500+0.18 EUR
1000+0.14 EUR
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TK60S06K3L(T6L1,NQ
TK60S06K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
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TK60S06K3L(T6L1,NQ
TK60S06K3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
auf Bestellung 1755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+2.23 EUR
100+1.78 EUR
500+1.5 EUR
1000+1.28 EUR
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TCR3DM25,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DM25,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
31+0.57 EUR
35+0.51 EUR
100+0.36 EUR
250+0.3 EUR
500+0.24 EUR
1000+0.19 EUR
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TPN2R805PL,L1Q TPN2R805PL_datasheet_en_20191030.pdf?did=53831&prodName=TPN2R805PL
TPN2R805PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
Produkt ist nicht verfügbar
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TPN2R805PL,L1Q TPN2R805PL_datasheet_en_20191030.pdf?did=53831&prodName=TPN2R805PL
TPN2R805PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
auf Bestellung 4661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.59 EUR
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TPW3R70APL,L1Q docget.jsp?did=59527&prodName=TPW3R70APL
TPW3R70APL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Produkt ist nicht verfügbar
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TPW3R70APL,L1Q docget.jsp?did=59527&prodName=TPW3R70APL
TPW3R70APL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 3174 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.6 EUR
100+2.51 EUR
500+2.21 EUR
Mindestbestellmenge: 4
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TJ15S06M3L,LXHQ TJ15S06M3L_datasheet_en_20200624.pdf?did=22424&prodName=TJ15S06M3L
TJ15S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.66 EUR
4000+0.61 EUR
Mindestbestellmenge: 2000
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TJ15S06M3L,LXHQ TJ15S06M3L_datasheet_en_20200624.pdf?did=22424&prodName=TJ15S06M3L
TJ15S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
12+1.52 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
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DF6S25P3NU,LF(B
Hersteller: Toshiba Semiconductor and Storage
Description: LF ESD PROTECTION DIODES 21V, SO
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 650pF @ 1MHz
Current - Peak Pulse (10/1000µs): 110A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: 6-UDFNB (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 5060W (5.06kW)
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
6000+0.34 EUR
Mindestbestellmenge: 3000
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DF6S25P3NU,LF(B
Hersteller: Toshiba Semiconductor and Storage
Description: LF ESD PROTECTION DIODES 21V, SO
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 650pF @ 1MHz
Current - Peak Pulse (10/1000µs): 110A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: 6-UDFNB (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 5060W (5.06kW)
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.83 EUR
25+0.78 EUR
100+0.63 EUR
250+0.59 EUR
500+0.5 EUR
1000+0.4 EUR
Mindestbestellmenge: 19
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HN1B01FU-GR,LXHF HN1B01FU_datasheet_en_20220311.pdf?did=19148&prodName=HN1B01FU
HN1B01FU-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.074 EUR
Mindestbestellmenge: 3000
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HN1B01FU-GR,LXHF HN1B01FU_datasheet_en_20220311.pdf?did=19148&prodName=HN1B01FU
HN1B01FU-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
62+0.29 EUR
122+0.14 EUR
500+0.12 EUR
1000+0.088 EUR
Mindestbestellmenge: 44
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HN1B01FU-Y,LXHF HN1B01FU_datasheet_en_20220311.pdf?did=19148&prodName=HN1B01FU
HN1B01FU-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HN1B01FU-Y,LXHF HN1B01FU_datasheet_en_20220311.pdf?did=19148&prodName=HN1B01FU
HN1B01FU-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
62+0.29 EUR
122+0.14 EUR
500+0.12 EUR
1000+0.088 EUR
Mindestbestellmenge: 44
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RN1911,LXHF(CT datasheet_en_20211223.pdf?did=18828
RN1911,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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RN1911,LXHF(CT datasheet_en_20211223.pdf?did=18828
RN1911,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
41+0.43 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.16 EUR
Mindestbestellmenge: 33
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RN4991FE,LXHF(CT RN4991FE_datasheet_en_20210818.pdf?did=19063&prodName=RN4991FE
RN4991FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPN + PNP Q1BSR=10
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.13 EUR
Mindestbestellmenge: 4000
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RN4991FE,LXHF(CT RN4991FE_datasheet_en_20210818.pdf?did=19063&prodName=RN4991FE
RN4991FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPN + PNP Q1BSR=10
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
43+0.41 EUR
100+0.21 EUR
500+0.18 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 31
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RN4911,LXHF(CT RN4911_datasheet_en_20210824.pdf?did=18970&prodName=RN4911
RN4911,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP+NPN BRT Q1BSR=
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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RN4911,LXHF(CT RN4911_datasheet_en_20210824.pdf?did=18970&prodName=RN4911
RN4911,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP+NPN BRT Q1BSR=
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
Mindestbestellmenge: 26
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RN2910,LXHF(CT datasheet_en_20211223.pdf?did=18911
RN2910,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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RN2910,LXHF(CT datasheet_en_20211223.pdf?did=18911
RN2910,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
Mindestbestellmenge: 25
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CMS20I40A(TE12L,QM CMS20I40A_datasheet_en_20140408.pdf?did=15141&prodName=CMS20I40A
CMS20I40A(TE12L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
Mindestbestellmenge: 3000
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CRS20I30B(TE85L,QM CRS20I30B_datasheet_en_20140221.pdf?did=14944&prodName=CRS20I30B
CRS20I30B(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
Mindestbestellmenge: 3000
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CRS20I30B(TE85L,QM CRS20I30B_datasheet_en_20140221.pdf?did=14944&prodName=CRS20I30B
CRS20I30B(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
30+0.59 EUR
100+0.36 EUR
500+0.33 EUR
1000+0.22 EUR
Mindestbestellmenge: 23
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CRS20I40B(TE85L,QM CRS20I40B_datasheet_en_20190909.pdf?did=15106&prodName=CRS20I40B
CRS20I40B(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
Mindestbestellmenge: 3000
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CRS20I40B(TE85L,QM CRS20I40B_datasheet_en_20190909.pdf?did=15106&prodName=CRS20I40B
CRS20I40B(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 3538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
29+0.61 EUR
100+0.36 EUR
500+0.34 EUR
1000+0.23 EUR
Mindestbestellmenge: 23
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CRS20I30A(TE85L,QM CRS20I30A_datasheet_en_20110506.pdf?did=2134&prodName=CRS20I30A
CRS20I30A(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Produkt ist nicht verfügbar
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CRS20I30A(TE85L,QM CRS20I30A_datasheet_en_20110506.pdf?did=2134&prodName=CRS20I30A
CRS20I30A(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
29+0.61 EUR
100+0.37 EUR
500+0.34 EUR
1000+0.23 EUR
Mindestbestellmenge: 23
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CMS20I30A(TE12L,QM
CMS20I30A(TE12L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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CMS20I30A(TE12L,QM
CMS20I30A(TE12L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
23+0.77 EUR
100+0.53 EUR
500+0.42 EUR
1000+0.34 EUR
Mindestbestellmenge: 20
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CRS20I40A(TE85L,QM CRS20I40A_datasheet_en_20140328.pdf?did=15096&prodName=CRS20I40A
CRS20I40A(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRS20I40A(TE85L,QM CRS20I40A_datasheet_en_20140328.pdf?did=15096&prodName=CRS20I40A
CRS20I40A(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
30+0.6 EUR
100+0.36 EUR
500+0.33 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
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