Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13051) > Seite 216 nach 218
Foto | Bezeichnung | Hersteller | Beschreibung |
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TCTH021BE,LF(CT | Toshiba Semiconductor and Storage |
Description: OVER TEMP DETECTION IC IPTCO: 10 Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Thermal Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
auf Bestellung 7930 Stücke: Lieferzeit 10-14 Tag (e) |
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TC78B004AFTG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHLESS MOTOR CONTROLLER WITH Packaging: Tape & Reel (TR) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 100mA Interface: PWM Operating Temperature: -30°C ~ 85°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 10V ~ 28V Applications: General Purpose Technology: NMOS Supplier Device Package: 40-WQFN (6x6) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TC78B004AFTG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHLESS MOTOR CONTROLLER WITH Packaging: Cut Tape (CT) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 100mA Interface: PWM Operating Temperature: -30°C ~ 85°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 10V ~ 28V Applications: General Purpose Technology: NMOS Supplier Device Package: 40-WQFN (6x6) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2313,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2313,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK8S06K3L(T6L1,NQ) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V |
Produkt ist nicht verfügbar |
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TK8S06K3L(T6L1,NQ) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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TK7S10N1Z,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK7S10N1Z,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V |
auf Bestellung 2955 Stücke: Lieferzeit 10-14 Tag (e) |
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TK7A80W,S4X | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TO- Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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TK25A20D,S5X | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TO- Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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MN07ACA12T | Toshiba Semiconductor and Storage |
Description: MN07 NAS B2B 12TB Packaging: Bulk Memory Size: 12TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 60°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
Produkt ist nicht verfügbar |
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RN2407,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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RN2407,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM10N961L,ELF | Toshiba Semiconductor and Storage |
Description: 30V N-CH COMMON DRAIN FET RSS:9. Packaging: Tape & Reel (TR) Package / Case: 10-XFLGA, CSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 880mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TCSPAG-341501 |
Produkt ist nicht verfügbar |
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SSM10N961L,ELF | Toshiba Semiconductor and Storage |
Description: 30V N-CH COMMON DRAIN FET RSS:9. Packaging: Cut Tape (CT) Package / Case: 10-XFLGA, CSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 880mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TCSPAG-341501 |
auf Bestellung 9490 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DG285,LF | Toshiba Semiconductor and Storage |
Description: PB-F CMOS POINT DDRULATOR (SINGL Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 2.85V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.235V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DG285,LF | Toshiba Semiconductor and Storage |
Description: PB-F CMOS POINT DDRULATOR (SINGL Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 2.85V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.235V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DG28,LF | Toshiba Semiconductor and Storage |
Description: PB-F CMOS POINT DDRULATOR (SINGL Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.235V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DG28,LF | Toshiba Semiconductor and Storage |
Description: PB-F CMOS POINT DDRULATOR (SINGL Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.235V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK095N65Z5,S1F(S | Toshiba Semiconductor and Storage |
Description: 650V DTMOS6-HIGH SPEED DIODE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.27mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 1.6A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
Produkt ist nicht verfügbar |
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SSM6N39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 1.6A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
Produkt ist nicht verfügbar |
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TLP716(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
Produkt ist nicht verfügbar |
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TLP716F(ABB-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
Produkt ist nicht verfügbar |
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TLP716F(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
Produkt ist nicht verfügbar |
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TLP716F(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
Produkt ist nicht verfügbar |
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TLP716(D4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
Produkt ist nicht verfügbar |
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TLP716(D4-MBS-TP,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
Produkt ist nicht verfügbar |
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TLP716F(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
Produkt ist nicht verfügbar |
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TLP2768B(D4LF4,E(T | Toshiba Semiconductor and Storage |
Description: HIGH SPEED LOGIC COUPLER; ROHS, Packaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.57V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 14ns, 1ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 25 mA |
Produkt ist nicht verfügbar |
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TLP2768F(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 25 mA |
Produkt ist nicht verfügbar |
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TLP2768(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 25 mA |
Produkt ist nicht verfügbar |
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TLP2768F(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 25 mA |
Produkt ist nicht verfügbar |
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TLP2768(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 25 mA |
Produkt ist nicht verfügbar |
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TLP2768F(D4MBSTP,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 25 mA |
Produkt ist nicht verfügbar |
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TLP2768F(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 25 mA |
Produkt ist nicht verfügbar |
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TLP513(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
Produkt ist nicht verfügbar |
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TLP513(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
Produkt ist nicht verfügbar |
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AL14SXB90EA | Toshiba Semiconductor and Storage |
Description: AL14SX 900GB Packaging: Bulk Size / Dimension: 100.45mm x 70.10mm x 15.00mm Memory Size: 900GB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 2.5" |
Produkt ist nicht verfügbar |
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AL14SXB90EN | Toshiba Semiconductor and Storage |
Description: AL14SX 900GB Packaging: Bulk Size / Dimension: 100.45mm x 70.10mm x 15.00mm Memory Size: 900GB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 2.5" |
Produkt ist nicht verfügbar |
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AL14SXB90EE | Toshiba Semiconductor and Storage |
Description: AL14SX 900GB Packaging: Bulk Size / Dimension: 100.45mm x 70.10mm x 15.00mm Memory Size: 900GB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 2.5" |
Produkt ist nicht verfügbar |
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TJ30S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 30A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V |
Produkt ist nicht verfügbar |
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DF2S8.2FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 6.5VWM SOD923 Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 20pF @ 1MHz Voltage - Reverse Standoff (Typ): 6.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.7V Power Line Protection: No |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S8.2FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 6.5VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 20pF @ 1MHz Voltage - Reverse Standoff (Typ): 6.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.7V Power Line Protection: No |
auf Bestellung 25167 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH1500CNH1,LQ | Toshiba Semiconductor and Storage |
Description: 150V U-MOS VIII-H SOP-ADVANCE(N) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 38A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V |
Produkt ist nicht verfügbar |
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TPH1500CNH1,LQ | Toshiba Semiconductor and Storage |
Description: 150V U-MOS VIII-H SOP-ADVANCE(N) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 38A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V |
Produkt ist nicht verfügbar |
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TC74VHC138F(EL,K,F | Toshiba Semiconductor and Storage |
Description: IC DECODER 1 X 3:8 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOP |
Produkt ist nicht verfügbar |
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TC74VHC138F(EL,K,F | Toshiba Semiconductor and Storage |
Description: IC DECODER 1 X 3:8 16SOP Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOP |
Produkt ist nicht verfügbar |
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2SC5886A(T6L1,NQ) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 5A PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5886A(T6L1,NQ) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 5A PW-MOLD Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DF32,LM(CT | Toshiba Semiconductor and Storage |
Description: PB-F SMV POINT DDRULATOR (SINGLE Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.2V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DF32,LM(CT | Toshiba Semiconductor and Storage |
Description: PB-F SMV POINT DDRULATOR (SINGLE Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.2V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2305,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2305,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2303,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2303,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2308,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2308,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 5940 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2306,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCTH021BE,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
auf Bestellung 7930 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
31+ | 0.59 EUR |
35+ | 0.51 EUR |
50+ | 0.49 EUR |
100+ | 0.42 EUR |
500+ | 0.36 EUR |
1000+ | 0.32 EUR |
TC78B004AFTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHLESS MOTOR CONTROLLER WITH
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: BRUSHLESS MOTOR CONTROLLER WITH
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 2.04 EUR |
TC78B004AFTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHLESS MOTOR CONTROLLER WITH
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: BRUSHLESS MOTOR CONTROLLER WITH
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.47 EUR |
10+ | 4.01 EUR |
25+ | 3.79 EUR |
100+ | 3.23 EUR |
250+ | 3.03 EUR |
500+ | 2.65 EUR |
1000+ | 2.2 EUR |
RN2313,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.048 EUR |
RN2313,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.28 EUR |
90+ | 0.2 EUR |
166+ | 0.11 EUR |
500+ | 0.084 EUR |
1000+ | 0.058 EUR |
TK8S06K3L(T6L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Description: MOSFET N-CH 60V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Produkt ist nicht verfügbar
TK8S06K3L(T6L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Description: MOSFET N-CH 60V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)TK7S10N1Z,LXHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.58 EUR |
TK7S10N1Z,LXHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.39 EUR |
16+ | 1.14 EUR |
100+ | 0.89 EUR |
500+ | 0.75 EUR |
1000+ | 0.61 EUR |
TK7A80W,S4X |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.52 EUR |
50+ | 3.63 EUR |
TK25A20D,S5X |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.82 EUR |
MN07ACA12T |
Hersteller: Toshiba Semiconductor and Storage
Description: MN07 NAS B2B 12TB
Packaging: Bulk
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MN07 NAS B2B 12TB
Packaging: Bulk
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
RN2407,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2407,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
81+ | 0.22 EUR |
150+ | 0.12 EUR |
500+ | 0.092 EUR |
1000+ | 0.064 EUR |
SSM10N961L,ELF |
Hersteller: Toshiba Semiconductor and Storage
Description: 30V N-CH COMMON DRAIN FET RSS:9.
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA, CSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TCSPAG-341501
Description: 30V N-CH COMMON DRAIN FET RSS:9.
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA, CSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TCSPAG-341501
Produkt ist nicht verfügbar
SSM10N961L,ELF |
Hersteller: Toshiba Semiconductor and Storage
Description: 30V N-CH COMMON DRAIN FET RSS:9.
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA, CSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TCSPAG-341501
Description: 30V N-CH COMMON DRAIN FET RSS:9.
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA, CSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TCSPAG-341501
auf Bestellung 9490 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.41 EUR |
15+ | 1.23 EUR |
100+ | 0.85 EUR |
500+ | 0.71 EUR |
1000+ | 0.6 EUR |
2000+ | 0.54 EUR |
5000+ | 0.51 EUR |
TCR3DG285,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.17 EUR |
TCR3DG285,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
35+ | 0.51 EUR |
38+ | 0.47 EUR |
100+ | 0.35 EUR |
250+ | 0.31 EUR |
500+ | 0.26 EUR |
1000+ | 0.2 EUR |
2500+ | 0.18 EUR |
TCR3DG28,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.17 EUR |
TCR3DG28,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
35+ | 0.51 EUR |
38+ | 0.47 EUR |
100+ | 0.35 EUR |
250+ | 0.31 EUR |
500+ | 0.26 EUR |
1000+ | 0.2 EUR |
2500+ | 0.18 EUR |
TK095N65Z5,S1F(S |
Hersteller: Toshiba Semiconductor and Storage
Description: 650V DTMOS6-HIGH SPEED DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
Description: 650V DTMOS6-HIGH SPEED DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.84 EUR |
30+ | 7.8 EUR |
120+ | 6.69 EUR |
SSM6N39TU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2N-CH 20V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Produkt ist nicht verfügbar
SSM6N39TU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2N-CH 20V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Produkt ist nicht verfügbar
TLP716(D4-TP,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
TLP716F(ABB-TP,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
TLP716F(D4-TP,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
TLP716F(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
TLP716(D4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
TLP716(D4-MBS-TP,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
TLP716F(TP,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
TLP2768B(D4LF4,E(T |
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC COUPLER; ROHS,
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 14ns, 1ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: HIGH SPEED LOGIC COUPLER; ROHS,
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 14ns, 1ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2768F(TP,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2768(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2768F(D4-TP,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2768(D4-TP,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2768F(D4MBSTP,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2768F(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP513(F) |
Produkt ist nicht verfügbar
TLP513(LF1,F) |
Produkt ist nicht verfügbar
AL14SXB90EA |
Hersteller: Toshiba Semiconductor and Storage
Description: AL14SX 900GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 900GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Description: AL14SX 900GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 900GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Produkt ist nicht verfügbar
AL14SXB90EN |
Hersteller: Toshiba Semiconductor and Storage
Description: AL14SX 900GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 900GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Description: AL14SX 900GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 900GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Produkt ist nicht verfügbar
AL14SXB90EE |
Hersteller: Toshiba Semiconductor and Storage
Description: AL14SX 900GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 900GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Description: AL14SX 900GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 900GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Produkt ist nicht verfügbar
TJ30S06M3L(T6L1,NQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Produkt ist nicht verfügbar
DF2S8.2FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.5VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Power Line Protection: No
Description: TVS DIODE 6.5VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.039 EUR |
DF2S8.2FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Power Line Protection: No
Description: TVS DIODE 6.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Power Line Protection: No
auf Bestellung 25167 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.28 EUR |
87+ | 0.2 EUR |
163+ | 0.11 EUR |
500+ | 0.085 EUR |
1000+ | 0.059 EUR |
2000+ | 0.049 EUR |
5000+ | 0.046 EUR |
TPH1500CNH1,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: 150V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Description: 150V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Produkt ist nicht verfügbar
TPH1500CNH1,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: 150V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Description: 150V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Produkt ist nicht verfügbar
TC74VHC138F(EL,K,F |
Hersteller: Toshiba Semiconductor and Storage
Description: IC DECODER 1 X 3:8 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Description: IC DECODER 1 X 3:8 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Produkt ist nicht verfügbar
TC74VHC138F(EL,K,F |
Hersteller: Toshiba Semiconductor and Storage
Description: IC DECODER 1 X 3:8 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Description: IC DECODER 1 X 3:8 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Produkt ist nicht verfügbar
2SC5886A(T6L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.42 EUR |
2SC5886A(T6L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 5A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 5A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.09 EUR |
19+ | 0.95 EUR |
100+ | 0.66 EUR |
500+ | 0.55 EUR |
1000+ | 0.47 EUR |
TCR3DF32,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F SMV POINT DDRULATOR (SINGLE
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Description: PB-F SMV POINT DDRULATOR (SINGLE
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
TCR3DF32,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F SMV POINT DDRULATOR (SINGLE
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Description: PB-F SMV POINT DDRULATOR (SINGLE
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
31+ | 0.58 EUR |
35+ | 0.51 EUR |
100+ | 0.33 EUR |
250+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
RN2305,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
RN2305,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
41+ | 0.43 EUR |
100+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.13 EUR |
RN2303,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
RN2303,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
41+ | 0.43 EUR |
100+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.13 EUR |
RN2308,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
RN2308,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
41+ | 0.43 EUR |
100+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.13 EUR |
RN2306,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.053 EUR |