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RN2305,LXHF RN2305,LXHF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 29
RN2303,LXHF RN2303,LXHF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
RN2303,LXHF RN2303,LXHF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 29
RN2308,LXHF RN2308,LXHF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
RN2308,LXHF RN2308,LXHF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5940 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 29
RN2306,LF RN2306,LF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.078 EUR
Mindestbestellmenge: 3000
RN2306,LF RN2306,LF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
56+0.47 EUR
81+ 0.32 EUR
150+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
Mindestbestellmenge: 56
RN2305,LF RN2305,LF Toshiba Semiconductor and Storage RN2305_datasheet_en_20210824.pdf?did=18998&prodName=RN2305 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2305,LF RN2305,LF Toshiba Semiconductor and Storage RN2305_datasheet_en_20210824.pdf?did=18998&prodName=RN2305 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 265 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
Mindestbestellmenge: 63
RN2303,LF RN2303,LF Toshiba Semiconductor and Storage RN2303_datasheet_en_20210824.pdf?did=18998&prodName=RN2303 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
RN2303,LF RN2303,LF Toshiba Semiconductor and Storage RN2303_datasheet_en_20210824.pdf?did=18998&prodName=RN2303 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
Mindestbestellmenge: 63
TLP2762B(D4LF4,E(T Toshiba Semiconductor and Storage docget.jsp?did=155041&prodName=TLP2762B Description: HIGH SPEED LOGIC COUPLER; ROHS,
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 14ns, 1ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2762B(D4TP4,E(T Toshiba Semiconductor and Storage docget.jsp?did=155041&prodName=TLP2762B Description: HIGH SPEED LOGIC COUPLER; ROHS,
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 14ns, 1ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2762B(D4TP4,E(T Toshiba Semiconductor and Storage docget.jsp?did=155041&prodName=TLP2762B Description: HIGH SPEED LOGIC COUPLER; ROHS,
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 14ns, 1ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
1SV305,H3F 1SV305,H3F Toshiba Semiconductor and Storage 1SV305_datasheet_en_20140301.pdf?did=2830&prodName=1SV305 Description: DIODE VARACTOR 10V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3
Produkt ist nicht verfügbar
RN1102,LXHF(CT RN1102,LXHF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.14 EUR
6000+ 0.13 EUR
Mindestbestellmenge: 3000
RN1102,LXHF(CT RN1102,LXHF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 8950 Stücke:
Lieferzeit 21-28 Tag (e)
34+0.78 EUR
48+ 0.55 EUR
100+ 0.28 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 34
RN1102MFV,L3XHF(CT RN1102MFV,L3XHF(CT Toshiba Semiconductor and Storage RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RN1102MFV,L3XHF(CT RN1102MFV,L3XHF(CT Toshiba Semiconductor and Storage RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 1415 Stücke:
Lieferzeit 21-28 Tag (e)
34+0.78 EUR
48+ 0.55 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 34
TC7S02FU,LF TC7S02FU,LF Toshiba Semiconductor and Storage TC7S02FU_datasheet_en_20140301.pdf?did=20182&prodName=TC7S02FU Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
TC7S02FU,LF TC7S02FU,LF Toshiba Semiconductor and Storage TC7S02FU_datasheet_en_20140301.pdf?did=20182&prodName=TC7S02FU Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
38+ 0.7 EUR
43+ 0.61 EUR
100+ 0.4 EUR
250+ 0.33 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 28
CMS14(TE12L,Q,M) CMS14(TE12L,Q,M) Toshiba Semiconductor and Storage CMS14_datasheet_en_20181016.pdf?did=19430&prodName=CMS14 Description: DIODE SCHOTTKY 60V 2A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
CMS14(TE12L,Q,M) CMS14(TE12L,Q,M) Toshiba Semiconductor and Storage CMS14_datasheet_en_20181016.pdf?did=19430&prodName=CMS14 Description: DIODE SCHOTTKY 60V 2A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 2600 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.4 EUR
22+ 1.2 EUR
100+ 0.83 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 19
CMS15(TE12L,Q,M) CMS15(TE12L,Q,M) Toshiba Semiconductor and Storage CMS15_datasheet_en_20180803.pdf?did=20252&prodName=CMS15 Description: DIODE SCHOTTKY 60V 3A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 102pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Produkt ist nicht verfügbar
CMS15(TE12L,Q,M) CMS15(TE12L,Q,M) Toshiba Semiconductor and Storage CMS15_datasheet_en_20180803.pdf?did=20252&prodName=CMS15 Description: DIODE SCHOTTKY 60V 3A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 102pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Produkt ist nicht verfügbar
TLP3127(F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 1.3A 0-60V
Packaging: Tube
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.3 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 130 mOhms
Produkt ist nicht verfügbar
TLP3127(TP,F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 1.3A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.3 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 130 mOhms
Produkt ist nicht verfügbar
TPMD0001A-0005 Toshiba Semiconductor and Storage Description: TPMD0001A-0005
Packaging: Tape & Reel (TR)
Function: Electric Speed Controller (ESC)
Type: Power Management
Utilized IC / Part: TMPM475FYFGM, TPH1R204PL, TPMD0001A
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Produkt ist nicht verfügbar
TJ50S06M3L(T6L1,NQ TJ50S06M3L(T6L1,NQ Toshiba Semiconductor and Storage TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L Description: MOSFET P-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
Produkt ist nicht verfügbar
TJ50S06M3L(T6L1,NQ TJ50S06M3L(T6L1,NQ Toshiba Semiconductor and Storage TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L Description: MOSFET P-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.5 EUR
10+ 3.73 EUR
100+ 2.96 EUR
500+ 2.51 EUR
1000+ 2.13 EUR
Mindestbestellmenge: 6
TCR3UM28A,LF(SE TCR3UM28A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.21 EUR
Mindestbestellmenge: 10000
TCR3UM28A,LF(SE TCR3UM28A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 25890 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
32+ 0.83 EUR
35+ 0.75 EUR
100+ 0.52 EUR
250+ 0.43 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2500+ 0.24 EUR
5000+ 0.23 EUR
Mindestbestellmenge: 24
SSM3K59CTB,L3F SSM3K59CTB,L3F Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 2A CST3B
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Produkt ist nicht verfügbar
SSM3K59CTB,L3F SSM3K59CTB,L3F Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 2A CST3B
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Produkt ist nicht verfügbar
MQ01ABD100V Toshiba Semiconductor and Storage Description: INTERNAL HARD DISK DRIVES
Packaging: Bulk
Size / Dimension: 100.00mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA II
Operating Temperature: 0°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Produkt ist nicht verfügbar
TC7SZ07AFS,L3J(T TC7SZ07AFS,L3J(T Toshiba Semiconductor and Storage Description: IC BUFFER NON-INVERT 5.5V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: fSV
Produkt ist nicht verfügbar
TCR2EN12,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=1.2V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EN12,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=1.2V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
auf Bestellung 9953 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
39+ 0.68 EUR
43+ 0.61 EUR
100+ 0.42 EUR
250+ 0.36 EUR
500+ 0.29 EUR
1000+ 0.22 EUR
2500+ 0.2 EUR
5000+ 0.19 EUR
Mindestbestellmenge: 29
RN4910FE,LXHF(CT RN4910FE,LXHF(CT Toshiba Semiconductor and Storage RN4910FE_datasheet_en_20210818.pdf?did=19037&prodName=RN4910FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.2 EUR
8000+ 0.19 EUR
Mindestbestellmenge: 4000
RN4910FE,LXHF(CT RN4910FE,LXHF(CT Toshiba Semiconductor and Storage RN4910FE_datasheet_en_20210818.pdf?did=19037&prodName=RN4910FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
42+ 0.63 EUR
100+ 0.32 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
Mindestbestellmenge: 30
TPHR7404PU,L1Q(M TPHR7404PU,L1Q(M Toshiba Semiconductor and Storage docget.jsp?did=69938&prodName=TPHR7404PU Description: 40V UMOS9 S 0.65MOHM SOP-ADV(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
Produkt ist nicht verfügbar
TPHR7404PU,L1Q(M TPHR7404PU,L1Q(M Toshiba Semiconductor and Storage docget.jsp?did=69938&prodName=TPHR7404PU Description: 40V UMOS9 S 0.65MOHM SOP-ADV(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
Produkt ist nicht verfügbar
TB62213AFG,C8,EL TB62213AFG,C8,EL Toshiba Semiconductor and Storage TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
TB62213AFG,C8,EL TB62213AFG,C8,EL Toshiba Semiconductor and Storage TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
AL14SXB60EE Toshiba Semiconductor and Storage ehdd-al14sxb-product-overview.pdf Description: AL14SX 600GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 600GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Produkt ist nicht verfügbar
TK46A08N1,S4X TK46A08N1,S4X Toshiba Semiconductor and Storage TK46A08N1_datasheet_en_20140213.pdf?did=13149&prodName=TK46A08N1 Description: MOSFET N-CH 80V 46A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 58 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.44 EUR
50+ 1.96 EUR
Mindestbestellmenge: 11
2SJ438(AISIN,A,Q) 2SJ438(AISIN,A,Q) Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438(AISIN,Q,M) 2SJ438(AISIN,Q,M) Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438(CANO,Q,M) 2SJ438(CANO,Q,M) Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438,MDKQ(J 2SJ438,MDKQ(J Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438,MDKQ(M 2SJ438,MDKQ(M Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438,Q(J 2SJ438,Q(J Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438,Q(M 2SJ438,Q(M Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
74HC00D 74HC00D Toshiba Semiconductor and Storage 74HC00D_datasheet_en_20160804.pdf?did=36764&prodName=74HC00D Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.38 EUR
5000+ 0.35 EUR
12500+ 0.33 EUR
Mindestbestellmenge: 2500
74HC00D 74HC00D Toshiba Semiconductor and Storage 74HC00D_datasheet_en_20160804.pdf?did=36764&prodName=74HC00D Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 16980 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
29+ 0.91 EUR
31+ 0.85 EUR
100+ 0.68 EUR
250+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 25
7UL1T34FS,LF(B Toshiba Semiconductor and Storage datasheet_en_20220203.pdf?did=141151 Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Produkt ist nicht verfügbar
7UL1T34FS,LF(B Toshiba Semiconductor and Storage datasheet_en_20220203.pdf?did=141151 Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Produkt ist nicht verfügbar
MN09ACA18T Toshiba Semiconductor and Storage cHDD-MN09-Product-Overview_r1a.pdf Description: MN09 NAS 18TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
TBD62304AFNG,EL TBD62304AFNG,EL Toshiba Semiconductor and Storage TBD62304AFNG_datasheet_en_20170324.pdf?did=58116&prodName=TBD62304AFNG Description: IC PWR DRIVER N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
auf Bestellung 3370 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.27 EUR
100+ 2.6 EUR
500+ 2.2 EUR
1000+ 1.87 EUR
Mindestbestellmenge: 7
RN2305,LXHF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2305,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 29
RN2303,LXHF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2303,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
RN2303,LXHF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2303,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 29
RN2308,LXHF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2308,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
RN2308,LXHF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2308,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5940 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 29
RN2306,LF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2306,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.078 EUR
Mindestbestellmenge: 3000
RN2306,LF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2306,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.47 EUR
81+ 0.32 EUR
150+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
Mindestbestellmenge: 56
RN2305,LF RN2305_datasheet_en_20210824.pdf?did=18998&prodName=RN2305
RN2305,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2305,LF RN2305_datasheet_en_20210824.pdf?did=18998&prodName=RN2305
RN2305,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 265 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
Mindestbestellmenge: 63
RN2303,LF RN2303_datasheet_en_20210824.pdf?did=18998&prodName=RN2303
RN2303,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
RN2303,LF RN2303_datasheet_en_20210824.pdf?did=18998&prodName=RN2303
RN2303,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
Mindestbestellmenge: 63
TLP2762B(D4LF4,E(T docget.jsp?did=155041&prodName=TLP2762B
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC COUPLER; ROHS,
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 14ns, 1ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2762B(D4TP4,E(T docget.jsp?did=155041&prodName=TLP2762B
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC COUPLER; ROHS,
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 14ns, 1ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TLP2762B(D4TP4,E(T docget.jsp?did=155041&prodName=TLP2762B
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC COUPLER; ROHS,
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 14ns, 1ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
1SV305,H3F 1SV305_datasheet_en_20140301.pdf?did=2830&prodName=1SV305
1SV305,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3
Produkt ist nicht verfügbar
RN1102,LXHF(CT
RN1102,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.13 EUR
Mindestbestellmenge: 3000
RN1102,LXHF(CT
RN1102,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 8950 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
34+0.78 EUR
48+ 0.55 EUR
100+ 0.28 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 34
RN1102MFV,L3XHF(CT RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV
RN1102MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RN1102MFV,L3XHF(CT RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV
RN1102MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 1415 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
34+0.78 EUR
48+ 0.55 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 34
TC7S02FU,LF TC7S02FU_datasheet_en_20140301.pdf?did=20182&prodName=TC7S02FU
TC7S02FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
TC7S02FU,LF TC7S02FU_datasheet_en_20140301.pdf?did=20182&prodName=TC7S02FU
TC7S02FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
38+ 0.7 EUR
43+ 0.61 EUR
100+ 0.4 EUR
250+ 0.33 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 28
CMS14(TE12L,Q,M) CMS14_datasheet_en_20181016.pdf?did=19430&prodName=CMS14
CMS14(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
CMS14(TE12L,Q,M) CMS14_datasheet_en_20181016.pdf?did=19430&prodName=CMS14
CMS14(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 2600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.4 EUR
22+ 1.2 EUR
100+ 0.83 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 19
CMS15(TE12L,Q,M) CMS15_datasheet_en_20180803.pdf?did=20252&prodName=CMS15
CMS15(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 3A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 102pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Produkt ist nicht verfügbar
CMS15(TE12L,Q,M) CMS15_datasheet_en_20180803.pdf?did=20252&prodName=CMS15
CMS15(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 3A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 102pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Produkt ist nicht verfügbar
TLP3127(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.3A 0-60V
Packaging: Tube
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.3 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 130 mOhms
Produkt ist nicht verfügbar
TLP3127(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.3A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.3 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 130 mOhms
Produkt ist nicht verfügbar
TPMD0001A-0005
Hersteller: Toshiba Semiconductor and Storage
Description: TPMD0001A-0005
Packaging: Tape & Reel (TR)
Function: Electric Speed Controller (ESC)
Type: Power Management
Utilized IC / Part: TMPM475FYFGM, TPH1R204PL, TPMD0001A
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Produkt ist nicht verfügbar
TJ50S06M3L(T6L1,NQ TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L
TJ50S06M3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
Produkt ist nicht verfügbar
TJ50S06M3L(T6L1,NQ TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L
TJ50S06M3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.5 EUR
10+ 3.73 EUR
100+ 2.96 EUR
500+ 2.51 EUR
1000+ 2.13 EUR
Mindestbestellmenge: 6
TCR3UM28A,LF(SE
TCR3UM28A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.21 EUR
Mindestbestellmenge: 10000
TCR3UM28A,LF(SE
TCR3UM28A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 25890 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
32+ 0.83 EUR
35+ 0.75 EUR
100+ 0.52 EUR
250+ 0.43 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2500+ 0.24 EUR
5000+ 0.23 EUR
Mindestbestellmenge: 24
SSM3K59CTB,L3F
SSM3K59CTB,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A CST3B
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Produkt ist nicht verfügbar
SSM3K59CTB,L3F
SSM3K59CTB,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A CST3B
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Produkt ist nicht verfügbar
MQ01ABD100V
Hersteller: Toshiba Semiconductor and Storage
Description: INTERNAL HARD DISK DRIVES
Packaging: Bulk
Size / Dimension: 100.00mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA II
Operating Temperature: 0°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Produkt ist nicht verfügbar
TC7SZ07AFS,L3J(T
TC7SZ07AFS,L3J(T
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: fSV
Produkt ist nicht verfügbar
TCR2EN12,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.2V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EN12,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.2V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
auf Bestellung 9953 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
39+ 0.68 EUR
43+ 0.61 EUR
100+ 0.42 EUR
250+ 0.36 EUR
500+ 0.29 EUR
1000+ 0.22 EUR
2500+ 0.2 EUR
5000+ 0.19 EUR
Mindestbestellmenge: 29
RN4910FE,LXHF(CT RN4910FE_datasheet_en_20210818.pdf?did=19037&prodName=RN4910FE
RN4910FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.2 EUR
8000+ 0.19 EUR
Mindestbestellmenge: 4000
RN4910FE,LXHF(CT RN4910FE_datasheet_en_20210818.pdf?did=19037&prodName=RN4910FE
RN4910FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
42+ 0.63 EUR
100+ 0.32 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
Mindestbestellmenge: 30
TPHR7404PU,L1Q(M docget.jsp?did=69938&prodName=TPHR7404PU
TPHR7404PU,L1Q(M
Hersteller: Toshiba Semiconductor and Storage
Description: 40V UMOS9 S 0.65MOHM SOP-ADV(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
Produkt ist nicht verfügbar
TPHR7404PU,L1Q(M docget.jsp?did=69938&prodName=TPHR7404PU
TPHR7404PU,L1Q(M
Hersteller: Toshiba Semiconductor and Storage
Description: 40V UMOS9 S 0.65MOHM SOP-ADV(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
Produkt ist nicht verfügbar
TB62213AFG,C8,EL TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG
TB62213AFG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
TB62213AFG,C8,EL TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG
TB62213AFG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
AL14SXB60EE ehdd-al14sxb-product-overview.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: AL14SX 600GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 600GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Produkt ist nicht verfügbar
TK46A08N1,S4X TK46A08N1_datasheet_en_20140213.pdf?did=13149&prodName=TK46A08N1
TK46A08N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 46A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 58 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.44 EUR
50+ 1.96 EUR
Mindestbestellmenge: 11
2SJ438(AISIN,A,Q) 2SJ438_2009-09-29.pdf
2SJ438(AISIN,A,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438(AISIN,Q,M) 2SJ438_2009-09-29.pdf
2SJ438(AISIN,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438(CANO,Q,M) 2SJ438_2009-09-29.pdf
2SJ438(CANO,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438,MDKQ(J 2SJ438_2009-09-29.pdf
2SJ438,MDKQ(J
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438,MDKQ(M 2SJ438_2009-09-29.pdf
2SJ438,MDKQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438,Q(J 2SJ438_2009-09-29.pdf
2SJ438,Q(J
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
2SJ438,Q(M 2SJ438_2009-09-29.pdf
2SJ438,Q(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
Produkt ist nicht verfügbar
74HC00D 74HC00D_datasheet_en_20160804.pdf?did=36764&prodName=74HC00D
74HC00D
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.38 EUR
5000+ 0.35 EUR
12500+ 0.33 EUR
Mindestbestellmenge: 2500
74HC00D 74HC00D_datasheet_en_20160804.pdf?did=36764&prodName=74HC00D
74HC00D
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 16980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.91 EUR
31+ 0.85 EUR
100+ 0.68 EUR
250+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 25
7UL1T34FS,LF(B datasheet_en_20220203.pdf?did=141151
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Produkt ist nicht verfügbar
7UL1T34FS,LF(B datasheet_en_20220203.pdf?did=141151
Hersteller: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Produkt ist nicht verfügbar
MN09ACA18T cHDD-MN09-Product-Overview_r1a.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MN09 NAS 18TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
TBD62304AFNG,EL TBD62304AFNG_datasheet_en_20170324.pdf?did=58116&prodName=TBD62304AFNG
TBD62304AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
auf Bestellung 3370 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.27 EUR
100+ 2.6 EUR
500+ 2.2 EUR
1000+ 1.87 EUR
Mindestbestellmenge: 7
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