Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Seite 33 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
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CRS10I30A(TE85L,Q) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1A SFLAT |
Produkt ist nicht verfügbar |
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CRS10I30B(TE85L,Q) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1A SFLAT |
Produkt ist nicht verfügbar |
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CRS10I30C(TE85L,Q) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1A SFLAT |
Produkt ist nicht verfügbar |
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CRS10I40A(TE85L,Q) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 1A SFLAT |
Produkt ist nicht verfügbar |
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CRS10I40B(TE85L,Q) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 1A SFLAT |
Produkt ist nicht verfügbar |
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CRS15I30A(TE85L,Q) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1.5A SFLAT |
Produkt ist nicht verfügbar |
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CRS20I30A(TE85L,QM | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 2A SFLAT |
Produkt ist nicht verfügbar |
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TB7101AF(T5L1.2,F) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK 1.2V 1A PS8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 1MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: PS-8 (2.9x2.4) Synchronous Rectifier: Yes Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 1.2V Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TB7101AF(T5L1.5,F) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK 1.5V 1A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 1MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: PS-8 (2.9x2.4) Synchronous Rectifier: Yes Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 1.5V |
Produkt ist nicht verfügbar |
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TB7101AF(T5L1.8,F) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK 1.8V 1A PS8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 1MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: PS-8 (2.9x2.4) Synchronous Rectifier: Yes Voltage - Input (Min): 2.8V Voltage - Output (Min/Fixed): 1.8V Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TB7101AF(T5L3.3,F) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK 3.3V 1A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 1MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: PS-8 (2.9x2.4) Synchronous Rectifier: Yes Voltage - Input (Min): 4.3V Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TB7102AF(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK ADJUSTABLE 1A PS8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 1MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: PS-8 (2.9x2.4) Synchronous Rectifier: Yes Voltage - Output (Max): 4.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.8V Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TB7106F(T2LPP1,Q) | Toshiba Semiconductor and Storage | Description: IC REG BUCK ADJ 3A SYNC 8SOP-ADV |
Produkt ist nicht verfügbar |
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TB7107FN(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK ADJ 2A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 380kHz Voltage - Input (Max): 20V Topology: Buck Supplier Device Package: PS-8 (2.9x2.4) Synchronous Rectifier: Yes Voltage - Output (Max): 18V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V |
Produkt ist nicht verfügbar |
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TB7109F(TE12L,Q) | Toshiba Semiconductor and Storage | Description: IC CONV BUCK DC/DC 0.5A 8SOP-ADV |
Produkt ist nicht verfügbar |
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TB7110F(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK ADJ DL 8SOP-ADV Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 2 Function: Step-Down Current - Output: 1.5A, 800mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 500kHz Voltage - Input (Max): 27V Topology: Buck Supplier Device Package: 8-SOP Advance (5x5) Synchronous Rectifier: No Voltage - Output (Max): 24V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 1.215V |
Produkt ist nicht verfügbar |
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TCV7100AF(TE12L,Q) | Toshiba Semiconductor and Storage | Description: IC REG BUCK ADJ 2.5A SYNC 8SOPA |
Produkt ist nicht verfügbar |
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TCV7101F(TE12L,Q) | Toshiba Semiconductor and Storage | Description: IC REG BUCK ADJ 3.8A 8SOP-ADV |
Produkt ist nicht verfügbar |
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TCV7102F(TE12L,Q) | Toshiba Semiconductor and Storage | Description: IC REG BUCK ADJ 3A SYNC 8SOP-ADV |
Produkt ist nicht verfügbar |
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TCV7103AF(TE12L,Q) | Toshiba Semiconductor and Storage | Description: IC REG BUCK ADJ 6A SYNC 8SOP-ADV |
Produkt ist nicht verfügbar |
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TCV7103F(TE12L,Q) | Toshiba Semiconductor and Storage | Description: IC REG BUCK ADJ 5A SYNC 8SOP-ADV |
Produkt ist nicht verfügbar |
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TCV7104FN(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK ADJ 2A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 1.5MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: PS-8 (2.9x2.4) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.8V |
Produkt ist nicht verfügbar |
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TCV7106FN(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK ADJ 2A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 550kHz Voltage - Input (Max): 5.6V Topology: Buck Supplier Device Package: PS-8 (2.9x2.4) Synchronous Rectifier: Both Voltage - Output (Max): 5.6V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.8V |
Produkt ist nicht verfügbar |
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TCV7108FN(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK ADJ 2A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 1.5MHz Voltage - Input (Max): 5.6V Topology: Buck Supplier Device Package: PS-8 (2.9x2.4) Synchronous Rectifier: Yes Voltage - Output (Max): 5.6V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.8V |
Produkt ist nicht verfügbar |
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TCV7113F(TE12L,Q) | Toshiba Semiconductor and Storage | Description: IC REG BUCK ADJ 6A 8SOP-ADV |
Produkt ist nicht verfügbar |
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TJ15S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 60V 15A DPAK-3 |
Produkt ist nicht verfügbar |
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TJ20S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 40V 20A DPAK-3 |
Produkt ist nicht verfügbar |
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TJ40S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 40V 40A DPAK-3 |
Produkt ist nicht verfügbar |
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TJ60S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 40V 60A DPAK-3 |
Produkt ist nicht verfügbar |
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TJ60S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 60V 60A DPAK-3 |
Produkt ist nicht verfügbar |
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TJ80S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 40V 80A DPAK-3 |
Produkt ist nicht verfügbar |
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TJ8S06M3L(T6L1,NQ) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 60V 8A DPAK |
Produkt ist nicht verfügbar |
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TK10A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 10A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
Produkt ist nicht verfügbar |
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TK10A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 550V 10A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
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TK10S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V |
Produkt ist nicht verfügbar |
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TK11A45D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 450V 11A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 620mOhm @ 5.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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TK11A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 11A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 5.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
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TK11A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 550V 11A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 5.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
Produkt ist nicht verfügbar |
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TK11A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
Produkt ist nicht verfügbar |
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TK12A45D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 450V 12A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
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TK12A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 12A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 29 Stücke: Lieferzeit 21-28 Tag (e) |
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TK12A53D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 525V 12A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
Produkt ist nicht verfügbar |
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TK12A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 550V 12A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 570mOhm @ 6A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
Produkt ist nicht verfügbar |
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TK12A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 12A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 48 Stücke: Lieferzeit 21-28 Tag (e) |
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TK12E60U,S1X(S | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 12A TO-220AB |
Produkt ist nicht verfügbar |
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TK13A45D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 450V 13A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 6.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 42 Stücke: Lieferzeit 21-28 Tag (e) |
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TK13A50DA(STA4,Q,M | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 12.5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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TK13A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 13A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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TK13A55DA(STA4,QM) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 550V 12.5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 6.3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
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TK13E25D,S1X(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 250V 13A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
auf Bestellung 46 Stücke: Lieferzeit 21-28 Tag (e) |
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TK13J65U(F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 650V 13A TO-3PN |
Produkt ist nicht verfügbar |
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TK14A45DA(STA4,QM) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 450V 13.5A TO-220SIS |
Produkt ist nicht verfügbar |
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TK14A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 450V 14A TO-220SIS |
Produkt ist nicht verfügbar |
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TK14A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 550V 14A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 7A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V |
auf Bestellung 34 Stücke: Lieferzeit 21-28 Tag (e) |
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TK15A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 15A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V |
auf Bestellung 65 Stücke: Lieferzeit 21-28 Tag (e) |
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TK15A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 15A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
Produkt ist nicht verfügbar |
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TK15E60U,S1X(S | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 15A TO-220AB |
Produkt ist nicht verfügbar |
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TK16A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 450V 16A TO-220SIS |
Produkt ist nicht verfügbar |
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TK16A55D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 550V 16A TO220SIS |
Produkt ist nicht verfügbar |
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TK17J65U(F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 650V 17A TO-3PN |
Produkt ist nicht verfügbar |
CRS10I30A(TE85L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Description: DIODE SCHOTTKY 30V 1A SFLAT
Produkt ist nicht verfügbar
CRS10I30B(TE85L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Description: DIODE SCHOTTKY 30V 1A SFLAT
Produkt ist nicht verfügbar
CRS10I30C(TE85L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Description: DIODE SCHOTTKY 30V 1A SFLAT
Produkt ist nicht verfügbar
CRS10I40A(TE85L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A SFLAT
Description: DIODE SCHOTTKY 40V 1A SFLAT
Produkt ist nicht verfügbar
CRS10I40B(TE85L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A SFLAT
Description: DIODE SCHOTTKY 40V 1A SFLAT
Produkt ist nicht verfügbar
CRS15I30A(TE85L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Produkt ist nicht verfügbar
CRS20I30A(TE85L,QM |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A SFLAT
Description: DIODE SCHOTTKY 30V 2A SFLAT
Produkt ist nicht verfügbar
TB7101AF(T5L1.2,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK 1.2V 1A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
Description: IC REG BUCK 1.2V 1A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
Produkt ist nicht verfügbar
TB7101AF(T5L1.5,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK 1.5V 1A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1.5V
Description: IC REG BUCK 1.5V 1A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1.5V
Produkt ist nicht verfügbar
TB7101AF(T5L1.8,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK 1.8V 1A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 1.8V
Part Status: Obsolete
Description: IC REG BUCK 1.8V 1A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 1.8V
Part Status: Obsolete
Produkt ist nicht verfügbar
TB7101AF(T5L3.3,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK 3.3V 1A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 4.3V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
Description: IC REG BUCK 3.3V 1A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 4.3V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
Produkt ist nicht verfügbar
TB7102AF(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJUSTABLE 1A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Obsolete
Description: IC REG BUCK ADJUSTABLE 1A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Obsolete
Produkt ist nicht verfügbar
TB7106F(T2LPP1,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 3A SYNC 8SOP-ADV
Description: IC REG BUCK ADJ 3A SYNC 8SOP-ADV
Produkt ist nicht verfügbar
TB7107FN(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 380kHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 380kHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
TB7109F(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC CONV BUCK DC/DC 0.5A 8SOP-ADV
Description: IC CONV BUCK DC/DC 0.5A 8SOP-ADV
Produkt ist nicht verfügbar
TB7110F(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ DL 8SOP-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 1.5A, 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 27V
Topology: Buck
Supplier Device Package: 8-SOP Advance (5x5)
Synchronous Rectifier: No
Voltage - Output (Max): 24V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.215V
Description: IC REG BUCK ADJ DL 8SOP-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 1.5A, 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 27V
Topology: Buck
Supplier Device Package: 8-SOP Advance (5x5)
Synchronous Rectifier: No
Voltage - Output (Max): 24V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.215V
Produkt ist nicht verfügbar
TCV7100AF(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 2.5A SYNC 8SOPA
Description: IC REG BUCK ADJ 2.5A SYNC 8SOPA
Produkt ist nicht verfügbar
TCV7101F(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 3.8A 8SOP-ADV
Description: IC REG BUCK ADJ 3.8A 8SOP-ADV
Produkt ist nicht verfügbar
TCV7102F(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 3A SYNC 8SOP-ADV
Description: IC REG BUCK ADJ 3A SYNC 8SOP-ADV
Produkt ist nicht verfügbar
TCV7103AF(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 6A SYNC 8SOP-ADV
Description: IC REG BUCK ADJ 6A SYNC 8SOP-ADV
Produkt ist nicht verfügbar
TCV7103F(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 5A SYNC 8SOP-ADV
Description: IC REG BUCK ADJ 5A SYNC 8SOP-ADV
Produkt ist nicht verfügbar
TCV7104FN(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
TCV7106FN(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 550kHz
Voltage - Input (Max): 5.6V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Both
Voltage - Output (Max): 5.6V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 550kHz
Voltage - Input (Max): 5.6V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Both
Voltage - Output (Max): 5.6V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
TCV7108FN(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.6V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.6V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.6V
Topology: Buck
Supplier Device Package: PS-8 (2.9x2.4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.6V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
TCV7113F(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 6A 8SOP-ADV
Description: IC REG BUCK ADJ 6A 8SOP-ADV
Produkt ist nicht verfügbar
TJ15S06M3L(T6L1,NQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 15A DPAK-3
Description: MOSFET P-CH 60V 15A DPAK-3
Produkt ist nicht verfügbar
TJ20S04M3L(T6L1,NQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK-3
Description: MOSFET P-CH 40V 20A DPAK-3
Produkt ist nicht verfügbar
TJ40S04M3L(T6L1,NQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK-3
Description: MOSFET P-CH 40V 40A DPAK-3
Produkt ist nicht verfügbar
TJ60S04M3L(T6L1,NQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK-3
Description: MOSFET P-CH 40V 60A DPAK-3
Produkt ist nicht verfügbar
TJ60S06M3L(T6L1,NQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 60A DPAK-3
Description: MOSFET P-CH 60V 60A DPAK-3
Produkt ist nicht verfügbar
TJ80S04M3L(T6L1,NQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK-3
Description: MOSFET P-CH 40V 80A DPAK-3
Produkt ist nicht verfügbar
TJ8S06M3L(T6L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 8A DPAK
Description: MOSFET P-CH 60V 8A DPAK
Produkt ist nicht verfügbar
TK10A50D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 500V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
TK10A55D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 550V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
TK10S04K3L(T6L1,NQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Description: MOSFET N-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Produkt ist nicht verfügbar
TK11A45D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 450V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.63 EUR |
10+ | 4.17 EUR |
TK11A50D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 500V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
TK11A55D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 550V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
TK11A60D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
TK12A45D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 450V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
TK12A50D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 29 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.69 EUR |
TK12A53D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 525V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
TK12A55D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 570mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 550V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 570mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
TK12A60D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.99 EUR |
TK12E60U,S1X(S |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO-220AB
Description: MOSFET N-CH 600V 12A TO-220AB
Produkt ist nicht verfügbar
TK13A45D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 450V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 42 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.85 EUR |
10+ | 4.86 EUR |
TK13A50DA(STA4,Q,M |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 500V 12.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 6.4 EUR |
10+ | 5.32 EUR |
TK13A50D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 500V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.18 EUR |
10+ | 5.96 EUR |
TK13A55DA(STA4,QM) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 12.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 550V 12.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
TK13E25D,S1X(S |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 250V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 46 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.43 EUR |
10+ | 4.52 EUR |
TK13J65U(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13A TO-3PN
Description: MOSFET N-CH 650V 13A TO-3PN
Produkt ist nicht verfügbar
TK14A45DA(STA4,QM) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 13.5A TO-220SIS
Description: MOSFET N-CH 450V 13.5A TO-220SIS
Produkt ist nicht verfügbar
TK14A45D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 14A TO-220SIS
Description: MOSFET N-CH 450V 14A TO-220SIS
Produkt ist nicht verfügbar
TK14A55D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 14A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Description: MOSFET N-CH 550V 14A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
auf Bestellung 34 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 8.22 EUR |
10+ | 7.37 EUR |
TK15A50D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Description: MOSFET N-CH 500V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
auf Bestellung 65 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.38 EUR |
10+ | 6.19 EUR |
TK15A60D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 600V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
TK15E60U,S1X(S |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TO-220AB
Description: MOSFET N-CH 600V 15A TO-220AB
Produkt ist nicht verfügbar
TK16A45D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 16A TO-220SIS
Description: MOSFET N-CH 450V 16A TO-220SIS
Produkt ist nicht verfügbar
TK16A55D(STA4,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 16A TO220SIS
Description: MOSFET N-CH 550V 16A TO220SIS
Produkt ist nicht verfügbar
TK17J65U(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17A TO-3PN
Description: MOSFET N-CH 650V 17A TO-3PN
Produkt ist nicht verfügbar