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TLP512(F) TLP512(F) Toshiba Semiconductor and Storage Description: OPTOISOLATOR 2.5KV TRANS 6-DIP
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TLP591B(C,F) TLP591B(C,F) Toshiba Semiconductor and Storage Description: OPTOISO 2.5KV 1CH PHVOLT 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-DIP, 5 Lead
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 7753 Stücke:
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TPCC8001-H(TE12LQM TPCC8001-H(TE12LQM Toshiba Semiconductor and Storage TPCC8001-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8002-H(TE12L,Q TPCC8002-H(TE12L,Q Toshiba Semiconductor and Storage TPCC8002-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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TPCC8002-H(TE12LQM TPCC8002-H(TE12LQM Toshiba Semiconductor and Storage TPCC8002-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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TPCC8003-H(TE12LQM TPCC8003-H(TE12LQM Toshiba Semiconductor and Storage TPCC8003-H.pdf Description: MOSFET N-CH 30V 13A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 6.5A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8005-H(TE12LQM TPCC8005-H(TE12LQM Toshiba Semiconductor and Storage TPCC8005-H.pdf Description: MOSFET N-CH 30V 26A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8006-H(TE12LQM TPCC8006-H(TE12LQM Toshiba Semiconductor and Storage TPCC8006-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8103(TE12L,QM) TPCC8103(TE12L,QM) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8103 Description: MOSFET P-CH 30V 18A 8TSON
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TPCC8A01-H(TE12LQM TPCC8A01-H(TE12LQM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Produkt ist nicht verfügbar
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TPCP8004(TE85L,F) TPCP8004(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 8.3A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
Produkt ist nicht verfügbar
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TPCP8103-H(TE85LFM TPCP8103-H(TE85LFM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 40V 4.8A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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1SV281(TPH3,F) 1SV281(TPH3,F) Toshiba Semiconductor and Storage 1SV281_datasheet_en_20140301.pdf?did=2798&prodName=1SV281 Description: DIODE VCO V/UHF 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.0
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CMF04(TE12L,Q,M) CMF04(TE12L,Q,M) Toshiba Semiconductor and Storage Description: DIODE STANDARD 800V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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CMF05(TE12L,Q,M) CMF05(TE12L,Q,M) Toshiba Semiconductor and Storage CMF05_2-17-10.pdf Description: DIODE STANDARD 1000V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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CMH05A(TE12L,Q,M) CMH05A(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=685&prodName=CMH05A Description: DIODE GEN PURP 400V 1A MFLAT
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CRY75(TE85L,Q,M) CRY75(TE85L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CRY62 Description: DIODE ZENER 7.5V 700MW SFLAT
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CRY82(TE85L,Q,M) CRY82(TE85L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY82 Description: DIODE ZENER 8.2V 700MW SFLAT
Produkt ist nicht verfügbar
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SSM3K106TU(TE85L) SSM3K106TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K106TU Description: MOSFET N-CH 20V 1.2A UFM
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SSM3K15CT(TPL3) SSM3K15CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K15CT Description: MOSFET N-CH 30V 0.1A CST3
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SSM3K15FS,LF SSM3K15FS,LF Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Produkt ist nicht verfügbar
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SSM3K303T(TE85L,F) SSM3K303T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K303T Description: MOSFET N-CH 30V 2.9A TSM
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SSM3K35MFV(TPL3) SSM3K35MFV(TPL3) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 20V 180MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM6J206FE(TE85L,F SSM6J206FE(TE85L,F Toshiba Semiconductor and Storage SSM6J206FE.pdf Description: MOSFET P-CH 20V 2A ES6
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SSM6J207FE,LF SSM6J207FE,LF Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 30V 1.4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 251mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
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SSM6K202FE,LF SSM6K202FE,LF Toshiba Semiconductor and Storage SSM6K202FE_datasheet_en_20220203.pdf?did=7258&prodName=SSM6K202FE Description: MOSFET N-CH 30V 2.3A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
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SSM6N15AFE,LM SSM6N15AFE,LM Toshiba Semiconductor and Storage SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
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TA48L033F(TE12L,F) TA48L033F(TE12L,F) Toshiba Semiconductor and Storage Description: IC REG LINEAR 3.3V 150MA PW-MINI
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TB62217AFG Toshiba Semiconductor and Storage TB62217AFG_DS.pdf Description: IC MOTOR DRIVER SER 64HQFP
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TK50P03M1(T6RSS-Q) TK50P03M1(T6RSS-Q) Toshiba Semiconductor and Storage Description: MOSFET N-CH 30V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Produkt ist nicht verfügbar
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TK50P04M1(T6RSS-Q) TK50P04M1(T6RSS-Q) Toshiba Semiconductor and Storage TK50P04M1_datasheet_en_20160217.pdf?did=1376&prodName=TK50P04M1 Description: MOSFET N-CH 40V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8001-H(TE12LQM TPCC8001-H(TE12LQM Toshiba Semiconductor and Storage TPCC8001-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8002-H(TE12L,Q TPCC8002-H(TE12L,Q Toshiba Semiconductor and Storage TPCC8002-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8002-H(TE12LQM TPCC8002-H(TE12LQM Toshiba Semiconductor and Storage TPCC8002-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8005-H(TE12LQM TPCC8005-H(TE12LQM Toshiba Semiconductor and Storage TPCC8005-H.pdf Description: MOSFET N-CH 30V 26A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8006-H(TE12LQM TPCC8006-H(TE12LQM Toshiba Semiconductor and Storage TPCC8006-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8008(TE12L,QM) TPCC8008(TE12L,QM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 25A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 12.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8103(TE12L,QM) TPCC8103(TE12L,QM) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8103 Description: MOSFET P-CH 30V 18A 8TSON
auf Bestellung 2818 Stücke:
Lieferzeit 10-14 Tag (e)
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TPCC8A01-H(TE12LQM TPCC8A01-H(TE12LQM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 21A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Produkt ist nicht verfügbar
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TPCP8004(TE85L,F) TPCP8004(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 8.3A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
Produkt ist nicht verfügbar
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TPCP8103-H(TE85LFM TPCP8103-H(TE85LFM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 40V 4.8A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Produkt ist nicht verfügbar
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CMH05A(TE12L,Q,M) CMH05A(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=685&prodName=CMH05A Description: DIODE GEN PURP 400V 1A MFLAT
auf Bestellung 8411 Stücke:
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CRY75(TE85L,Q,M) CRY75(TE85L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CRY62 Description: DIODE ZENER 7.5V 700MW SFLAT
auf Bestellung 4441 Stücke:
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SSM3K106TU(TE85L) SSM3K106TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K106TU Description: MOSFET N-CH 20V 1.2A UFM
Produkt ist nicht verfügbar
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SSM3K15CT(TPL3) SSM3K15CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K15CT Description: MOSFET N-CH 30V 0.1A CST3
Produkt ist nicht verfügbar
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SSM3K303T(TE85L,F) SSM3K303T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K303T Description: MOSFET N-CH 30V 2.9A TSM
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SSM6J206FE(TE85L,F SSM6J206FE(TE85L,F Toshiba Semiconductor and Storage SSM6J206FE.pdf Description: MOSFET P-CH 20V 2A ES6
auf Bestellung 7491 Stücke:
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TB62217AFG(O) Toshiba Semiconductor and Storage TB62217AFG_DS.pdf Description: IC MOTOR DRIVER SER 64HQFP
Produkt ist nicht verfügbar
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TPCC8103(TE12L,QM) TPCC8103(TE12L,QM) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8103 Description: MOSFET P-CH 30V 18A 8TSON
auf Bestellung 2818 Stücke:
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1SS314TPH3F 1SS314TPH3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=1SS314 Description: DIODE VHF SW BAND USC
Produkt ist nicht verfügbar
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1SS419(TPL3,F) 1SS419(TPL3,F) Toshiba Semiconductor and Storage docget.jsp?pid=1SS419&lang=en&type=datasheet Description: DIODE SCHOTTKY 40V 100MA SESC
Produkt ist nicht verfügbar
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1SV290B(TH3,F,T) 1SV290B(TH3,F,T) Toshiba Semiconductor and Storage 1SV290B.pdf Description: DIODE VAR 30V CATV 2ESD ESC
Produkt ist nicht verfügbar
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2SA1362-GR(T5L,F,T 2SA1362-GR(T5L,F,T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SA1362 Description: TRANS PNP 15V 0.8A SMINI
Produkt ist nicht verfügbar
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CUS06(TE85L,Q) CUS06(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CUS06 Description: DIODE SCHOTTKY 20V 1A USFLAT
Produkt ist nicht verfügbar
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DF2S24FS(TH3,T) DF2S24FS(TH3,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S24FS Description: TVS DIODE 19VWM 22.8VC FSC
Produkt ist nicht verfügbar
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DF2S6.8CT(TPL3) DF2S6.8CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8CT Description: TVS DIODE 5VWM CST2
Produkt ist nicht verfügbar
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DF2S6.8FS(TH3,T) DF2S6.8FS(TH3,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8FS Description: TVS DIODE 5VWM 9VC FSC
Produkt ist nicht verfügbar
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JDV2S25FS(TPL3) Toshiba Semiconductor and Storage JDV2S25FS.pdf Description: DIODE VAR 10V VHF FSC
Produkt ist nicht verfügbar
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JDV2S25SC(TPL3) Toshiba Semiconductor and Storage JDV2S25SC.pdf Description: DIODE VAR 10V UHF SC2
Produkt ist nicht verfügbar
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RN1101MFV(TPL3) RN1101MFV(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1101MFV Description: TRANS PREBIAS NPN 150MW VESM
Produkt ist nicht verfügbar
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TLP512(F)
TLP512(F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 2.5KV TRANS 6-DIP
Produkt ist nicht verfügbar
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TLP591B(C,F)
TLP591B(C,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 1CH PHVOLT 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-DIP, 5 Lead
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 7753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
50+2.74 EUR
100+2.57 EUR
500+2.25 EUR
1000+2.2 EUR
Mindestbestellmenge: 4
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TPCC8001-H(TE12LQM TPCC8001-H.pdf
TPCC8001-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8002-H(TE12L,Q TPCC8002-H.pdf
TPCC8002-H(TE12L,Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8002-H(TE12LQM TPCC8002-H.pdf
TPCC8002-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8003-H(TE12LQM TPCC8003-H.pdf
TPCC8003-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 6.5A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8005-H(TE12LQM TPCC8005-H.pdf
TPCC8005-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 26A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8006-H(TE12LQM TPCC8006-H.pdf
TPCC8006-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8103(TE12L,QM) docget.jsp?type=datasheet&lang=en&pid=TPCC8103
TPCC8103(TE12L,QM)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A 8TSON
Produkt ist nicht verfügbar
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TPCC8A01-H(TE12LQM Mosfets_Prod_Guide.pdf
TPCC8A01-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Produkt ist nicht verfügbar
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TPCP8004(TE85L,F) Mosfets_Prod_Guide.pdf
TPCP8004(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 8.3A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
Produkt ist nicht verfügbar
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TPCP8103-H(TE85LFM Mosfets_Prod_Guide.pdf
TPCP8103-H(TE85LFM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 4.8A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Produkt ist nicht verfügbar
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1SV281(TPH3,F) 1SV281_datasheet_en_20140301.pdf?did=2798&prodName=1SV281
1SV281(TPH3,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VCO V/UHF 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.0
auf Bestellung 18195 Stücke:
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Anzahl Preis
31+0.58 EUR
46+0.38 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.16 EUR
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CMF04(TE12L,Q,M)
CMF04(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 800V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar
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CMF05(TE12L,Q,M) CMF05_2-17-10.pdf
CMF05(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 1000V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
auf Bestellung 23980 Stücke:
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Anzahl Preis
17+1.06 EUR
28+0.64 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.31 EUR
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CMH05A(TE12L,Q,M) docget.jsp?did=685&prodName=CMH05A
CMH05A(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 1A MFLAT
auf Bestellung 8411 Stücke:
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CRY75(TE85L,Q,M) docget.jsp?type=datasheet&lang=en&pid=CRY62
CRY75(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 7.5V 700MW SFLAT
auf Bestellung 4441 Stücke:
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CRY82(TE85L,Q,M) docget.jsp?did=3175&prodName=CRY82
CRY82(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 8.2V 700MW SFLAT
Produkt ist nicht verfügbar
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SSM3K106TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3K106TU
SSM3K106TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.2A UFM
Produkt ist nicht verfügbar
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SSM3K15CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3K15CT
SSM3K15CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 0.1A CST3
auf Bestellung 13926 Stücke:
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SSM3K15FS,LF Mosfets_Prod_Guide.pdf
SSM3K15FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Produkt ist nicht verfügbar
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SSM3K303T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K303T
SSM3K303T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.9A TSM
auf Bestellung 132 Stücke:
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SSM3K35MFV(TPL3) Mosfets_Prod_Guide.pdf
SSM3K35MFV(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 180MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM6J206FE(TE85L,F SSM6J206FE.pdf
SSM6J206FE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A ES6
auf Bestellung 7491 Stücke:
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SSM6J207FE,LF Mosfets_Prod_Guide.pdf
SSM6J207FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 251mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
auf Bestellung 3875 Stücke:
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Anzahl Preis
21+0.86 EUR
34+0.53 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
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SSM6K202FE,LF SSM6K202FE_datasheet_en_20220203.pdf?did=7258&prodName=SSM6K202FE
SSM6K202FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.3A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 15376 Stücke:
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Anzahl Preis
22+0.81 EUR
26+0.69 EUR
100+0.52 EUR
500+0.41 EUR
1000+0.31 EUR
2000+0.29 EUR
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SSM6N15AFE,LM SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE
SSM6N15AFE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3255 Stücke:
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Anzahl Preis
32+0.56 EUR
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TA48L033F(TE12L,F)
TA48L033F(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 150MA PW-MINI
Produkt ist nicht verfügbar
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TB62217AFG TB62217AFG_DS.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER SER 64HQFP
Produkt ist nicht verfügbar
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TK50P03M1(T6RSS-Q)
TK50P03M1(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Produkt ist nicht verfügbar
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TK50P04M1(T6RSS-Q) TK50P04M1_datasheet_en_20160217.pdf?did=1376&prodName=TK50P04M1
TK50P04M1(T6RSS-Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8001-H(TE12LQM TPCC8001-H.pdf
TPCC8001-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8002-H(TE12L,Q TPCC8002-H.pdf
TPCC8002-H(TE12L,Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8002-H(TE12LQM TPCC8002-H.pdf
TPCC8002-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8005-H(TE12LQM TPCC8005-H.pdf
TPCC8005-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 26A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8006-H(TE12LQM TPCC8006-H.pdf
TPCC8006-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8008(TE12L,QM) Mosfets_Prod_Guide.pdf
TPCC8008(TE12L,QM)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 25A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 12.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8103(TE12L,QM) docget.jsp?type=datasheet&lang=en&pid=TPCC8103
TPCC8103(TE12L,QM)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A 8TSON
auf Bestellung 2818 Stücke:
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TPCC8A01-H(TE12LQM Mosfets_Prod_Guide.pdf
TPCC8A01-H(TE12LQM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 21A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Produkt ist nicht verfügbar
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TPCP8004(TE85L,F) Mosfets_Prod_Guide.pdf
TPCP8004(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 8.3A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
Produkt ist nicht verfügbar
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TPCP8103-H(TE85LFM Mosfets_Prod_Guide.pdf
TPCP8103-H(TE85LFM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 4.8A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Produkt ist nicht verfügbar
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CMH05A(TE12L,Q,M) docget.jsp?did=685&prodName=CMH05A
CMH05A(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 1A MFLAT
auf Bestellung 8411 Stücke:
Lieferzeit 10-14 Tag (e)
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CRY75(TE85L,Q,M) docget.jsp?type=datasheet&lang=en&pid=CRY62
CRY75(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 7.5V 700MW SFLAT
auf Bestellung 4441 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM3K106TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3K106TU
SSM3K106TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.2A UFM
Produkt ist nicht verfügbar
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SSM3K15CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3K15CT
SSM3K15CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 0.1A CST3
Produkt ist nicht verfügbar
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SSM3K303T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K303T
SSM3K303T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.9A TSM
Produkt ist nicht verfügbar
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SSM6J206FE(TE85L,F SSM6J206FE.pdf
SSM6J206FE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A ES6
auf Bestellung 7491 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62217AFG(O) TB62217AFG_DS.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER SER 64HQFP
Produkt ist nicht verfügbar
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TPCC8103(TE12L,QM) docget.jsp?type=datasheet&lang=en&pid=TPCC8103
TPCC8103(TE12L,QM)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A 8TSON
auf Bestellung 2818 Stücke:
Lieferzeit 10-14 Tag (e)
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1SS314TPH3F docget.jsp?type=datasheet&lang=en&pid=1SS314
1SS314TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VHF SW BAND USC
Produkt ist nicht verfügbar
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1SS419(TPL3,F) docget.jsp?pid=1SS419&lang=en&type=datasheet
1SS419(TPL3,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA SESC
Produkt ist nicht verfügbar
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1SV290B(TH3,F,T) 1SV290B.pdf
1SV290B(TH3,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VAR 30V CATV 2ESD ESC
Produkt ist nicht verfügbar
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2SA1362-GR(T5L,F,T docget.jsp?type=datasheet&lang=en&pid=2SA1362
2SA1362-GR(T5L,F,T
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 15V 0.8A SMINI
Produkt ist nicht verfügbar
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CUS06(TE85L,Q) docget.jsp?type=datasheet&lang=en&pid=CUS06
CUS06(TE85L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A USFLAT
Produkt ist nicht verfügbar
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DF2S24FS(TH3,T) docget.jsp?type=datasheet&lang=en&pid=DF2S24FS
DF2S24FS(TH3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22.8VC FSC
Produkt ist nicht verfügbar
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DF2S6.8CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF2S6.8CT
DF2S6.8CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST2
Produkt ist nicht verfügbar
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DF2S6.8FS(TH3,T) docget.jsp?type=datasheet&lang=en&pid=DF2S6.8FS
DF2S6.8FS(TH3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 9VC FSC
Produkt ist nicht verfügbar
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JDV2S25FS(TPL3) JDV2S25FS.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VAR 10V VHF FSC
Produkt ist nicht verfügbar
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JDV2S25SC(TPL3) JDV2S25SC.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VAR 10V UHF SC2
Produkt ist nicht verfügbar
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RN1101MFV(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN1101MFV
RN1101MFV(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 150MW VESM
Produkt ist nicht verfügbar
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