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1SS381,L3F 1SS381,L3F Toshiba Semiconductor and Storage Description: DIODE RF SWITCH 30V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 100 mA
Produkt ist nicht verfügbar
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TD62004AFG,N,EL TD62004AFG,N,EL Toshiba Semiconductor and Storage Description: IC TRANSCEIVER 7/0 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0V ~ 50V
Number of Drivers/Receivers: 7/0
Supplier Device Package: 16-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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SSM3J114TU(T5L,T) SSM3J114TU(T5L,T) Toshiba Semiconductor and Storage docget.jsp?did=6714&prodName=SSM3J114TU Description: MOSFET P-CH 20V 1.8A UFM
Produkt ist nicht verfügbar
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SSM3J120TU,LF SSM3J120TU,LF Toshiba Semiconductor and Storage SSM3J120TU_datasheet_en_20140301.pdf?did=6719&prodName=SSM3J120TU Description: MOSFET P-CH 20V 4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J129TU(TE85L) SSM3J129TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J129TU Description: MOSFET P-CH 20V 4.6A UFM
Produkt ist nicht verfügbar
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SSM3J130TU,LF SSM3J130TU,LF Toshiba Semiconductor and Storage SSM3J130TU_datasheet_en_20140301.pdf?did=481&prodName=SSM3J130TU Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 102000 Stücke:
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6000+0.26 EUR
9000+0.25 EUR
15000+0.24 EUR
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SSM3J307T(TE85L,F) SSM3J307T(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 5A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J321T(TE85L,F) SSM3J321T(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J46CTB(TPL3) SSM3J46CTB(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=1707&prodName=SSM3J46CTB Description: MOSFET P-CH 20V 2A CST3B
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SSM3K123TU,LF SSM3K123TU,LF Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 12000 Stücke:
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3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
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SSM3K315T(TE85L,F) SSM3K315T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K315T Description: MOSFET N-CH 30V 6A TSM
Produkt ist nicht verfügbar
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SSM3K316T(TE85L,F) SSM3K316T(TE85L,F) Toshiba Semiconductor and Storage SSM3K316T.pdf Description: MOSFET N-CH 30V 4A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3K318T(T5L,F,T) SSM3K318T(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K318T Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
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SSM3K7002BSU,LF SSM3K7002BSU,LF Toshiba Semiconductor and Storage SSM3K7002BSU.pdf Description: MOSFET N-CH 60V 200MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Produkt ist nicht verfügbar
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SSM4K27CTTPL3 SSM4K27CTTPL3 Toshiba Semiconductor and Storage SSM4K27CT_datasheet_en_20140301.pdf?did=5965&prodName=SSM4K27CT Description: MOSFET N-CH 20V 500MA CST4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 205mOhm @ 250mA, 4V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 1mA
Supplier Device Package: CST4 (1.2x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 10 V
Produkt ist nicht verfügbar
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SSM5G10TU(TE85L,F) SSM5G10TU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM5G10TU Description: MOSFET P-CH 20V 1.5A UFV
auf Bestellung 6000 Stücke:
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SSM5H12TU(TE85L,F) SSM5H12TU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=12336&prodName=SSM5H12TU Description: MOSFET N-CH 30V 1.9A UFV
Produkt ist nicht verfügbar
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SSM6J409TU(TE85L,F SSM6J409TU(TE85L,F Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J51TUTE85LF SSM6J51TUTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6J51TU Description: MOSFET P-CH 12V 4A UF6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SSM6J53FE(TE85L,F) SSM6J53FE(TE85L,F) Toshiba Semiconductor and Storage SSM6J53FE.pdf Description: MOSFET P-CH 20V 1.8A ES6
Produkt ist nicht verfügbar
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SSM6K211FE,LF SSM6K211FE,LF Toshiba Semiconductor and Storage SSM6K211FE_datasheet_en_20140301.pdf?did=12358&prodName=SSM6K211FE Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.27 EUR
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SSM6L35FE,LM SSM6L35FE,LM Toshiba Semiconductor and Storage SSM6L16FE_datasheet_en_20140301.pdf?did=1226&prodName=SSM6L16FE Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
12000+0.11 EUR
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SSM6L36FE,LM SSM6L36FE,LM Toshiba Semiconductor and Storage docget.jsp?did=11738&prodName=SSM6L36FE Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
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SSM6N35FE,LM SSM6N35FE,LM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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SSM6N37CTD(TPL3) SSM6N37CTD(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=968&prodName=SSM6N37CTD Description: MOSFET 2N-CH 20V 0.25A CST6D
Produkt ist nicht verfügbar
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SSM6N42FE(TE85L,F) SSM6N42FE(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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SSM6N44FE,LM SSM6N44FE,LM Toshiba Semiconductor and Storage docget.jsp?did=366&prodName=SSM6N44FE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
auf Bestellung 74500 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.14 EUR
8000+0.13 EUR
12000+0.12 EUR
20000+0.11 EUR
28000+0.11 EUR
40000+0.1 EUR
Mindestbestellmenge: 4000 Stücke
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SSM6P15FE(TE85L,F) SSM6P15FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22741&prodName=SSM6P15FE Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.21 EUR
12000+0.18 EUR
Mindestbestellmenge: 4000 Stücke
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SSM6P35FE(TE85L,F) SSM6P35FE(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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SSM6P41FE(TE85L,F) SSM6P41FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=584&prodName=SSM6P41FE Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.2 EUR
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SSM3J114TU(T5L,T) SSM3J114TU(T5L,T) Toshiba Semiconductor and Storage docget.jsp?did=6714&prodName=SSM3J114TU Description: MOSFET P-CH 20V 1.8A UFM
auf Bestellung 5158 Stücke:
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SSM3J120TU,LF SSM3J120TU,LF Toshiba Semiconductor and Storage SSM3J120TU_datasheet_en_20140301.pdf?did=6719&prodName=SSM3J120TU Description: MOSFET P-CH 20V 4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J129TU(TE85L) SSM3J129TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J129TU Description: MOSFET P-CH 20V 4.6A UFM
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SSM3J130TU,LF SSM3J130TU,LF Toshiba Semiconductor and Storage SSM3J130TU_datasheet_en_20140301.pdf?did=481&prodName=SSM3J130TU Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 104998 Stücke:
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32+0.67 EUR
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500+0.36 EUR
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SSM3J321T(TE85L,F) SSM3J321T(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J46CTB(TPL3) SSM3J46CTB(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=1707&prodName=SSM3J46CTB Description: MOSFET P-CH 20V 2A CST3B
auf Bestellung 25072 Stücke:
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SSM3K123TU,LF SSM3K123TU,LF Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 12928 Stücke:
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500+0.36 EUR
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SSM3K315T(TE85L,F) SSM3K315T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K315T Description: MOSFET N-CH 30V 6A TSM
Produkt ist nicht verfügbar
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SSM3K316T(TE85L,F) SSM3K316T(TE85L,F) Toshiba Semiconductor and Storage SSM3K316T.pdf Description: MOSFET N-CH 30V 4A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3K318T(T5L,F,T) SSM3K318T(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K318T Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
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SSM4K27CT(TPL3) SSM4K27CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM4K27CT Description: MOSFET N-CH 20V .5A CST4
Produkt ist nicht verfügbar
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SSM5G10TU(TE85L,F) SSM5G10TU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM5G10TU Description: MOSFET P-CH 20V 1.5A UFV
auf Bestellung 2666 Stücke:
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SSM5H12TU(TE85L,F) SSM5H12TU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=12336&prodName=SSM5H12TU Description: MOSFET N-CH 30V 1.9A UFV
Produkt ist nicht verfügbar
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SSM6J409TU(TE85L,F SSM6J409TU(TE85L,F Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J51TUTE85LF SSM6J51TUTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6J51TU Description: MOSFET P-CH 12V 4A UF6
Produkt ist nicht verfügbar
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SSM6J53FE(TE85L,F) SSM6J53FE(TE85L,F) Toshiba Semiconductor and Storage SSM6J53FE.pdf Description: MOSFET P-CH 20V 1.8A ES6
Produkt ist nicht verfügbar
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SSM6K211FE,LF SSM6K211FE,LF Toshiba Semiconductor and Storage SSM6K211FE_datasheet_en_20140301.pdf?did=12358&prodName=SSM6K211FE Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.09 EUR
31+0.7 EUR
100+0.46 EUR
500+0.38 EUR
1000+0.31 EUR
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SSM6L35FE,LM SSM6L35FE,LM Toshiba Semiconductor and Storage SSM6L16FE_datasheet_en_20140301.pdf?did=1226&prodName=SSM6L16FE Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 27310 Stücke:
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40+0.52 EUR
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500+0.21 EUR
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SSM6L36FE,LM SSM6L36FE,LM Toshiba Semiconductor and Storage docget.jsp?did=11738&prodName=SSM6L36FE Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 1295 Stücke:
Lieferzeit 10-14 Tag (e)
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49+0.43 EUR
100+0.27 EUR
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SSM6N35FE,LM SSM6N35FE,LM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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SSM6N37CTD(TPL3) SSM6N37CTD(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=968&prodName=SSM6N37CTD Description: MOSFET 2N-CH 20V 0.25A CST6D
Produkt ist nicht verfügbar
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SSM6N44FE,LM SSM6N44FE,LM Toshiba Semiconductor and Storage docget.jsp?did=366&prodName=SSM6N44FE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
auf Bestellung 74500 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.69 EUR
50+0.42 EUR
100+0.26 EUR
500+0.19 EUR
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SSM6N7002BFE(T5L,F SSM6N7002BFE(T5L,F Toshiba Semiconductor and Storage docget.jsp?did=2282&prodName=SSM6N7002BFE Description: MOSFET 2N-CH 60V 0.2A ES6
Produkt ist nicht verfügbar
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SSM6N7002BFU(T5L,F SSM6N7002BFU(T5L,F Toshiba Semiconductor and Storage SSM6N7002BFU.pdf Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Produkt ist nicht verfügbar
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SSM6P15FE(TE85L,F) SSM6P15FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22741&prodName=SSM6P15FE Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 34620 Stücke:
Lieferzeit 10-14 Tag (e)
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35+0.62 EUR
50+0.44 EUR
100+0.39 EUR
500+0.29 EUR
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SSM6P35FE(TE85L,F) SSM6P35FE(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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SSM6P41FE(TE85L,F) SSM6P41FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=584&prodName=SSM6P41FE Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 11392 Stücke:
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19+1.11 EUR
31+0.68 EUR
100+0.43 EUR
500+0.32 EUR
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SSM3J129TU(TE85L) SSM3J129TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J129TU Description: MOSFET P-CH 20V 4.6A UFM
Produkt ist nicht verfügbar
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SSM3K315T(TE85L,F) SSM3K315T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K315T Description: MOSFET N-CH 30V 6A TSM
Produkt ist nicht verfügbar
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SSM3K318T(T5L,F,T) SSM3K318T(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K318T Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
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1SS381,L3F
1SS381,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE RF SWITCH 30V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 100 mA
Produkt ist nicht verfügbar
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TD62004AFG,N,EL
TD62004AFG,N,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 7/0 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0V ~ 50V
Number of Drivers/Receivers: 7/0
Supplier Device Package: 16-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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SSM3J114TU(T5L,T) docget.jsp?did=6714&prodName=SSM3J114TU
SSM3J114TU(T5L,T)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
Produkt ist nicht verfügbar
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SSM3J120TU,LF SSM3J120TU_datasheet_en_20140301.pdf?did=6719&prodName=SSM3J120TU
SSM3J120TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J129TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3J129TU
SSM3J129TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.6A UFM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM3J130TU,LF SSM3J130TU_datasheet_en_20140301.pdf?did=481&prodName=SSM3J130TU
SSM3J130TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
6000+0.26 EUR
9000+0.25 EUR
15000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J307T(TE85L,F) Mosfets_Prod_Guide.pdf
SSM3J307T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J321T(TE85L,F) Mosfets_Prod_Guide.pdf
SSM3J321T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J46CTB(TPL3) docget.jsp?did=1707&prodName=SSM3J46CTB
SSM3J46CTB(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A CST3B
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 10000 Stücke
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SSM3K123TU,LF Mosfets_Prod_Guide.pdf
SSM3K123TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3K315T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K315T
SSM3K315T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A TSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM3K316T(TE85L,F) SSM3K316T.pdf
SSM3K316T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3K318T(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=SSM3K318T
SSM3K318T(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM3K7002BSU,LF SSM3K7002BSU.pdf
SSM3K7002BSU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Produkt ist nicht verfügbar
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SSM4K27CTTPL3 SSM4K27CT_datasheet_en_20140301.pdf?did=5965&prodName=SSM4K27CT
SSM4K27CTTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA CST4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 205mOhm @ 250mA, 4V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 1mA
Supplier Device Package: CST4 (1.2x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 10 V
Produkt ist nicht verfügbar
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SSM5G10TU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM5G10TU
SSM5G10TU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.5A UFV
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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SSM5H12TU(TE85L,F) docget.jsp?did=12336&prodName=SSM5H12TU
SSM5H12TU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM6J409TU(TE85L,F Mosfets_Prod_Guide.pdf
SSM6J409TU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J51TUTE85LF docget.jsp?type=datasheet&lang=en&pid=SSM6J51TU
SSM6J51TUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 4A UF6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM6J53FE(TE85L,F) SSM6J53FE.pdf
SSM6J53FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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SSM6K211FE,LF SSM6K211FE_datasheet_en_20140301.pdf?did=12358&prodName=SSM6K211FE
SSM6K211FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.27 EUR
Mindestbestellmenge: 4000 Stücke
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SSM6L35FE,LM SSM6L16FE_datasheet_en_20140301.pdf?did=1226&prodName=SSM6L16FE
SSM6L35FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.13 EUR
12000+0.11 EUR
Mindestbestellmenge: 4000 Stücke
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SSM6L36FE,LM docget.jsp?did=11738&prodName=SSM6L36FE
SSM6L36FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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SSM6N35FE,LM Mosfets_Prod_Guide.pdf
SSM6N35FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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SSM6N37CTD(TPL3) docget.jsp?did=968&prodName=SSM6N37CTD
SSM6N37CTD(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A CST6D
Produkt ist nicht verfügbar
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SSM6N42FE(TE85L,F) Mosfets_Prod_Guide.pdf
SSM6N42FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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SSM6N44FE,LM docget.jsp?did=366&prodName=SSM6N44FE
SSM6N44FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
auf Bestellung 74500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.14 EUR
8000+0.13 EUR
12000+0.12 EUR
20000+0.11 EUR
28000+0.11 EUR
40000+0.1 EUR
Mindestbestellmenge: 4000 Stücke
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SSM6P15FE(TE85L,F) docget.jsp?did=22741&prodName=SSM6P15FE
SSM6P15FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.21 EUR
12000+0.18 EUR
Mindestbestellmenge: 4000 Stücke
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SSM6P35FE(TE85L,F) Mosfets_Prod_Guide.pdf
SSM6P35FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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SSM6P41FE(TE85L,F) docget.jsp?did=584&prodName=SSM6P41FE
SSM6P41FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.2 EUR
Mindestbestellmenge: 4000 Stücke
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SSM3J114TU(T5L,T) docget.jsp?did=6714&prodName=SSM3J114TU
SSM3J114TU(T5L,T)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
auf Bestellung 5158 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM3J120TU,LF SSM3J120TU_datasheet_en_20140301.pdf?did=6719&prodName=SSM3J120TU
SSM3J120TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J129TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3J129TU
SSM3J129TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.6A UFM
Produkt ist nicht verfügbar
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SSM3J130TU,LF SSM3J130TU_datasheet_en_20140301.pdf?did=481&prodName=SSM3J130TU
SSM3J130TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 104998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
32+0.67 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.32 EUR
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SSM3J321T(TE85L,F) Mosfets_Prod_Guide.pdf
SSM3J321T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J46CTB(TPL3) docget.jsp?did=1707&prodName=SSM3J46CTB
SSM3J46CTB(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A CST3B
auf Bestellung 25072 Stücke:
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SSM3K123TU,LF Mosfets_Prod_Guide.pdf
SSM3K123TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 12928 Stücke:
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19+1.11 EUR
30+0.7 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.3 EUR
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SSM3K315T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K315T
SSM3K315T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A TSM
Produkt ist nicht verfügbar
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SSM3K316T(TE85L,F) SSM3K316T.pdf
SSM3K316T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3K318T(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=SSM3K318T
SSM3K318T(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
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SSM4K27CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM4K27CT
SSM4K27CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V .5A CST4
Produkt ist nicht verfügbar
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SSM5G10TU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM5G10TU
SSM5G10TU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.5A UFV
auf Bestellung 2666 Stücke:
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SSM5H12TU(TE85L,F) docget.jsp?did=12336&prodName=SSM5H12TU
SSM5H12TU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Produkt ist nicht verfügbar
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SSM6J409TU(TE85L,F Mosfets_Prod_Guide.pdf
SSM6J409TU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J51TUTE85LF docget.jsp?type=datasheet&lang=en&pid=SSM6J51TU
SSM6J51TUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 4A UF6
Produkt ist nicht verfügbar
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SSM6J53FE(TE85L,F) SSM6J53FE.pdf
SSM6J53FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A ES6
Produkt ist nicht verfügbar
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SSM6K211FE,LF SSM6K211FE_datasheet_en_20140301.pdf?did=12358&prodName=SSM6K211FE
SSM6K211FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
31+0.7 EUR
100+0.46 EUR
500+0.38 EUR
1000+0.31 EUR
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SSM6L35FE,LM SSM6L16FE_datasheet_en_20140301.pdf?did=1226&prodName=SSM6L16FE
SSM6L35FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 27310 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
40+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.15 EUR
2000+0.13 EUR
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SSM6L36FE,LM docget.jsp?did=11738&prodName=SSM6L36FE
SSM6L36FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 1295 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
49+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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SSM6N35FE,LM Mosfets_Prod_Guide.pdf
SSM6N35FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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SSM6N37CTD(TPL3) docget.jsp?did=968&prodName=SSM6N37CTD
SSM6N37CTD(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A CST6D
Produkt ist nicht verfügbar
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SSM6N44FE,LM docget.jsp?did=366&prodName=SSM6N44FE
SSM6N44FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
auf Bestellung 74500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.42 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.18 EUR
2000+0.15 EUR
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SSM6N7002BFE(T5L,F docget.jsp?did=2282&prodName=SSM6N7002BFE
SSM6N7002BFE(T5L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A ES6
Produkt ist nicht verfügbar
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SSM6N7002BFU(T5L,F SSM6N7002BFU.pdf
SSM6N7002BFU(T5L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Produkt ist nicht verfügbar
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SSM6P15FE(TE85L,F) docget.jsp?did=22741&prodName=SSM6P15FE
SSM6P15FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 34620 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
35+0.62 EUR
50+0.44 EUR
100+0.39 EUR
500+0.29 EUR
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SSM6P35FE(TE85L,F) Mosfets_Prod_Guide.pdf
SSM6P35FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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SSM6P41FE(TE85L,F) docget.jsp?did=584&prodName=SSM6P41FE
SSM6P41FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 11392 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
31+0.68 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.3 EUR
2000+0.26 EUR
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SSM3J129TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3J129TU
SSM3J129TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.6A UFM
Produkt ist nicht verfügbar
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SSM3K315T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K315T
SSM3K315T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A TSM
Produkt ist nicht verfügbar
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SSM3K318T(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=SSM3K318T
SSM3K318T(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
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