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SSM6J213FE(TE85L,F SSM6J213FE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=6624&prodName=SSM6J213FE Description: MOSFET P CH 20V 2.6A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J414TU,LF SSM6J414TU,LF Toshiba Semiconductor and Storage docget.jsp?did=13022&prodName=SSM6J414TU Description: MOSFET P CH 20V 6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J505NU,LF SSM6J505NU,LF Toshiba Semiconductor and Storage SSM6J505NU_datasheet_en_20210917.pdf?did=13456&prodName=SSM6J505NU Description: MOSFET P-CH 12V 12A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J334R,LF SSM3J334R,LF Toshiba Semiconductor and Storage docget.jsp?did=5579&prodName=SSM3J334R Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
auf Bestellung 65010 Stücke:
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3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
15000+0.13 EUR
30000+0.12 EUR
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SSM3J334R,LF SSM3J334R,LF Toshiba Semiconductor and Storage docget.jsp?did=5579&prodName=SSM3J334R Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
auf Bestellung 65121 Stücke:
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44+0.48 EUR
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500+0.23 EUR
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SSM6J215FE(TE85L,F SSM6J215FE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=13425&prodName=SSM6J215FE Description: MOSFET P CH 20V 3.4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
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36+0.58 EUR
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500+0.27 EUR
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2000+0.23 EUR
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SSM6N57NU,LF SSM6N57NU,LF Toshiba Semiconductor and Storage docget.jsp?did=13889&prodName=SSM6N57NU Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
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27+0.77 EUR
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SSM6N57NU,LF SSM6N57NU,LF Toshiba Semiconductor and Storage docget.jsp?did=13889&prodName=SSM6N57NU Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
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6000+0.26 EUR
9000+0.25 EUR
15000+0.24 EUR
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TC7SH125F,LF TC7SH125F,LF Toshiba Semiconductor and Storage docget.jsp?did=435&prodName=TC7SH125F Description: IC BUFFER NON-INVERT 5.5V SMV
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TC7SH125F,LF TC7SH125F,LF Toshiba Semiconductor and Storage docget.jsp?did=435&prodName=TC7SH125F Description: IC BUFFER NON-INVERT 5.5V SMV
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SSM3K324R,LF SSM3K324R,LF Toshiba Semiconductor and Storage docget.jsp?did=13879&prodName=SSM3K324R Description: MOSFET N-CH 30V 4A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
Produkt ist nicht verfügbar
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SSM3K324R,LF SSM3K324R,LF Toshiba Semiconductor and Storage docget.jsp?did=13879&prodName=SSM3K324R Description: MOSFET N-CH 30V 4A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
Produkt ist nicht verfügbar
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SSM3K335R,LF SSM3K335R,LF Toshiba Semiconductor and Storage docget.jsp?did=13020&prodName=SSM3K335R Description: MOSFET N CH 30V 6A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Produkt ist nicht verfügbar
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SSM3K335R,LF SSM3K335R,LF Toshiba Semiconductor and Storage docget.jsp?did=13020&prodName=SSM3K335R Description: MOSFET N CH 30V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 438 Stücke:
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23+0.94 EUR
36+0.58 EUR
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2SK2854(TE12L,F) 2SK2854(TE12L,F) Toshiba Semiconductor and Storage Description: RF MOSFET 10V PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 500mA
Frequency: 849MHz
Configuration: N-Channel
Power - Output: 23dBmW
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PW-MINI
Voltage - Rated: 10 V
Produkt ist nicht verfügbar
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2SK2854(TE12L,F) 2SK2854(TE12L,F) Toshiba Semiconductor and Storage Description: RF MOSFET 10V PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Current Rating (Amps): 500mA
Frequency: 849MHz
Configuration: N-Channel
Power - Output: 23dBmW
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PW-MINI
Voltage - Rated: 10 V
Produkt ist nicht verfügbar
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TPH4R50ANH,L1Q TPH4R50ANH,L1Q Toshiba Semiconductor and Storage TPH4R50ANH_datasheet_en_20191018.pdf?did=13446&prodName=TPH4R50ANH Description: MOSFET N CH 100V 60A SOP ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
auf Bestellung 9293 Stücke:
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3+7.96 EUR
10+5.22 EUR
100+3.68 EUR
500+3.09 EUR
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TPN4R203NC,L1Q TPN4R203NC,L1Q Toshiba Semiconductor and Storage TPN4R203NC_datasheet_en_20191030.pdf?did=13633&prodName=TPN4R203NC Description: MOSFET N CH 30V 23A 8TSON-ADV
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TK5P60W,RVQ TK5P60W,RVQ Toshiba Semiconductor and Storage TK5P60W_Rev3.0_9-17-14.pdf Description: MOSFET N CH 600V 5.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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TK5Q60W,S1VQ TK5Q60W,S1VQ Toshiba Semiconductor and Storage Description: MOSFET N CH 600V 5.4A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 126 Stücke:
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TK6Q60W,S1VQ TK6Q60W,S1VQ Toshiba Semiconductor and Storage TK6Q60W_datasheet_en_20140105.pdf?did=13532&prodName=TK6Q60W Description: MOSFET N-CH 600V 6.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 186 Stücke:
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TK8P60W,RVQ TK8P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13675&prodName=TK8P60W Description: MOSFET N CH 600V 8A DPAK
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Produkt ist nicht verfügbar
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TPH4R008NH,L1Q TPH4R008NH,L1Q Toshiba Semiconductor and Storage TPH4R008NH_datasheet_en_20191017.pdf?did=13444&prodName=TPH4R008NH Description: MOSFET N-CH 80V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOP Advance (5x5)
auf Bestellung 8211 Stücke:
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3+7.96 EUR
10+5.22 EUR
100+3.68 EUR
500+3.09 EUR
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TPH4R008NH,L1Q TPH4R008NH,L1Q Toshiba Semiconductor and Storage TPH4R008NH_datasheet_en_20191017.pdf?did=13444&prodName=TPH4R008NH Description: MOSFET N-CH 80V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
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TPH4R50ANH,L1Q TPH4R50ANH,L1Q Toshiba Semiconductor and Storage TPH4R50ANH_datasheet_en_20191018.pdf?did=13446&prodName=TPH4R50ANH Description: MOSFET N CH 100V 60A SOP ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
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TPN4R203NC,L1Q TPN4R203NC,L1Q Toshiba Semiconductor and Storage TPN4R203NC_datasheet_en_20191030.pdf?did=13633&prodName=TPN4R203NC Description: MOSFET N CH 30V 23A 8TSON-ADV
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TK5P60W,RVQ TK5P60W,RVQ Toshiba Semiconductor and Storage TK5P60W_Rev3.0_9-17-14.pdf Description: MOSFET N CH 600V 5.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 7975 Stücke:
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100+2.24 EUR
500+1.89 EUR
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TK8Q60W,S1VQ TK8Q60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK8Q60W Description: MOSFET N CH 600V 8A IPAK
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TK8P60W,RVQ TK8P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13675&prodName=TK8P60W Description: MOSFET N CH 600V 8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TK12P60W,RVQ TK12P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13511&prodName=TK12P60W Description: MOSFET N CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1698 Stücke:
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10+3.37 EUR
100+2.31 EUR
500+1.86 EUR
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TK12P60W,RVQ TK12P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13511&prodName=TK12P60W Description: MOSFET N CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TK12Q60W,S1VQ TK12Q60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?did=13513&prodName=TK12Q60W Description: MOSFET N CH 600V 11.5A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 17 Stücke:
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TK16G60W,RVQ TK16G60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13520&prodName=TK16G60W Description: MOSFET N CH 600V 15.8A D2PAK
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3.7V @ 790µA
auf Bestellung 981 Stücke:
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TK16G60W,RVQ TK16G60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13520&prodName=TK16G60W Description: MOSFET N CH 600V 15.8A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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TPH2R306NH,L1Q TPH2R306NH,L1Q Toshiba Semiconductor and Storage TPH2R306NH_datasheet_en_20191024.pdf?did=13732&prodName=TPH2R306NH Description: MOSFET N-CH 60V 60A 8SOP
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
auf Bestellung 5003 Stücke:
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100+1.99 EUR
500+1.59 EUR
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TK16N60W,S1VF TK16N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13611&prodName=TK16N60W Description: MOSFET N CH 600V 15.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
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3+8.54 EUR
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TK31N60W,S1VF TK31N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13612&prodName=TK31N60W Description: MOSFET N CH 600V 30.8A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
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TK39N60W,S1VF TK39N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13613&prodName=TK39N60W Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 18 Stücke:
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TK62N60W,S1VF TK62N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13614&prodName=TK62N60W Description: MOSFET N-CH 600V 61.8A TO247
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 50 Stücke:
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TK100L60W,VQ TK100L60W,VQ Toshiba Semiconductor and Storage docget.jsp?did=13695&prodName=TK100L60W Description: MOSFET N-CH 600V 100A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Power Dissipation (Max): 797W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 5mA
Supplier Device Package: TO-3P(L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
auf Bestellung 64 Stücke:
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1+52.99 EUR
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TPH2R306NH,L1Q TPH2R306NH,L1Q Toshiba Semiconductor and Storage TPH2R306NH_datasheet_en_20191024.pdf?did=13732&prodName=TPH2R306NH Description: MOSFET N-CH 60V 60A 8SOP
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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TB67H301FTG,EL TB67H301FTG,EL Toshiba Semiconductor and Storage TB67H301FTG_datasheet_en_20141001.pdf?did=14095&prodName=TB67H301FTG Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 24-WQFN (4x4)
Voltage - Load: 4.5V ~ 38V
Technology: BiCDMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 14270 Stücke:
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11+2.05 EUR
25+1.86 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.44 EUR
2500+1.39 EUR
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TC78H600FTG,EL TC78H600FTG,EL Toshiba Semiconductor and Storage docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet Description: IC MOTOR DRIVER PAR 24WQFN
auf Bestellung 4818 Stücke:
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TC78H600FTG,EL TC78H600FTG,EL Toshiba Semiconductor and Storage docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet Description: IC MOTOR DRIVER PAR 24WQFN
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TC94B15WBG(EB,NK2Z TC94B15WBG(EB,NK2Z Toshiba Semiconductor and Storage TC94B15WBG.pdf Description: IC AMP CLASS G STEREO 20WCSP
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TC94B06WBG(EB,NKA) TC94B06WBG(EB,NKA) Toshiba Semiconductor and Storage TC94B06WBG.pdf Description: IC AMP CLASS G STEREO 16WCSP
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TC62D902FG(C8,ELHZ TC62D902FG(C8,ELHZ Toshiba Semiconductor and Storage docget.jsp?did=14182&prodName=TC62D902FG Description: IC CNTRLR ISOLATED 8SOP
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TC78H600FTG,EL TC78H600FTG,EL Toshiba Semiconductor and Storage docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet Description: IC MOTOR DRIVER PAR 24WQFN
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TC35420XLG(EL) Toshiba Semiconductor and Storage Description: IC TRANSFERJET 4.48GHZ 81XFLGA
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TC35420XLG(EL) Toshiba Semiconductor and Storage Description: IC TRANSFERJET 4.48GHZ 81XFLGA
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JBTC94B12-AS(EB) JBTC94B12-AS(EB) Toshiba Semiconductor and Storage Description: IC AMPLIFIER ECM 6XFBGA
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TC62D902FG(C8,ELHZ TC62D902FG(C8,ELHZ Toshiba Semiconductor and Storage docget.jsp?did=14182&prodName=TC62D902FG Description: IC CNTRLR ISOLATED 8SOP
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TC62D902FG(C8,ELHZ TC62D902FG(C8,ELHZ Toshiba Semiconductor and Storage docget.jsp?did=14182&prodName=TC62D902FG Description: IC CNTRLR ISOLATED 8SOP
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TB6818FG,EL TB6818FG,EL Toshiba Semiconductor and Storage TB6818FG.pdf Description: IC PFC CTRLR CCM 16SOP
Current - Startup: 30 µA
Supplier Device Package: 16-SSOP
Mode: Continuous Conduction (CCM)
Frequency - Switching: 20kHz ~ 150kHz
Voltage - Supply: 8.4V ~ 26V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOP (0.181", 4.60mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TB6819AFG,C,EL TB6819AFG,C,EL Toshiba Semiconductor and Storage docget.jsp?did=12875&prodName=TB6819AFG Description: IC PFC CTRLR CRM 150KHZ 8SOP
Current - Startup: 72.5 µA
Supplier Device Package: 8-SOP
Mode: Critical Conduction (CRM)
Frequency - Switching: 20kHz ~ 150kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply: 10V ~ 25V
Operating Temperature: -40°C ~ 85°C
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TC35420XLG(EL) Toshiba Semiconductor and Storage Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
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TB67H301FTG,EL TB67H301FTG,EL Toshiba Semiconductor and Storage TB67H301FTG_datasheet_en_20141001.pdf?did=14095&prodName=TB67H301FTG Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 24-WQFN (4x4)
Voltage - Load: 4.5V ~ 38V
Technology: BiCDMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-WFQFN Exposed Pad
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DF6D7M1N,LF DF6D7M1N,LF Toshiba Semiconductor and Storage DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N Description: TVS DIODE 5VWM 12VC 6DFN
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: 6-DFN (1.25x1)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
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DF6D7M1N,LF DF6D7M1N,LF Toshiba Semiconductor and Storage DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N Description: TVS DIODE 5VWM 12VC 6DFN
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: 6-DFN (1.25x1)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
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TCR2EE33,LM TCR2EE33,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 3.3V 200MA ESV
Protection Features: Over Current
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM6J213FE(TE85L,F docget.jsp?did=6624&prodName=SSM6J213FE
SSM6J213FE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 2.6A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J414TU,LF docget.jsp?did=13022&prodName=SSM6J414TU
SSM6J414TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J505NU,LF SSM6J505NU_datasheet_en_20210917.pdf?did=13456&prodName=SSM6J505NU
SSM6J505NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 12A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J334R,LF docget.jsp?did=5579&prodName=SSM3J334R
SSM3J334R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
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3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
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SSM3J334R,LF docget.jsp?did=5579&prodName=SSM3J334R
SSM3J334R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
auf Bestellung 65121 Stücke:
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27+0.8 EUR
44+0.48 EUR
100+0.3 EUR
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SSM6J215FE(TE85L,F docget.jsp?did=13425&prodName=SSM6J215FE
SSM6J215FE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 3.4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 8278 Stücke:
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22+0.96 EUR
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SSM6N57NU,LF docget.jsp?did=13889&prodName=SSM6N57NU
SSM6N57NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 91795 Stücke:
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17+1.26 EUR
27+0.77 EUR
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SSM6N57NU,LF docget.jsp?did=13889&prodName=SSM6N57NU
SSM6N57NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
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3000+0.29 EUR
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TC7SH125F,LF docget.jsp?did=435&prodName=TC7SH125F
TC7SH125F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Produkt ist nicht verfügbar
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TC7SH125F,LF docget.jsp?did=435&prodName=TC7SH125F
TC7SH125F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Produkt ist nicht verfügbar
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SSM3K324R,LF docget.jsp?did=13879&prodName=SSM3K324R
SSM3K324R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
Produkt ist nicht verfügbar
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SSM3K324R,LF docget.jsp?did=13879&prodName=SSM3K324R
SSM3K324R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
Produkt ist nicht verfügbar
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SSM3K335R,LF docget.jsp?did=13020&prodName=SSM3K335R
SSM3K335R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Produkt ist nicht verfügbar
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SSM3K335R,LF docget.jsp?did=13020&prodName=SSM3K335R
SSM3K335R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 438 Stücke:
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23+0.94 EUR
36+0.58 EUR
100+0.37 EUR
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2SK2854(TE12L,F)
2SK2854(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 10V PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 500mA
Frequency: 849MHz
Configuration: N-Channel
Power - Output: 23dBmW
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PW-MINI
Voltage - Rated: 10 V
Produkt ist nicht verfügbar
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2SK2854(TE12L,F)
2SK2854(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 10V PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Current Rating (Amps): 500mA
Frequency: 849MHz
Configuration: N-Channel
Power - Output: 23dBmW
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PW-MINI
Voltage - Rated: 10 V
Produkt ist nicht verfügbar
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TPH4R50ANH,L1Q TPH4R50ANH_datasheet_en_20191018.pdf?did=13446&prodName=TPH4R50ANH
TPH4R50ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 60A SOP ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
auf Bestellung 9293 Stücke:
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3+7.96 EUR
10+5.22 EUR
100+3.68 EUR
500+3.09 EUR
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TPN4R203NC,L1Q TPN4R203NC_datasheet_en_20191030.pdf?did=13633&prodName=TPN4R203NC
TPN4R203NC,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 23A 8TSON-ADV
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TK5P60W,RVQ TK5P60W_Rev3.0_9-17-14.pdf
TK5P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 5.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
2000+1.46 EUR
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TK5Q60W,S1VQ
TK5Q60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 5.4A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 126 Stücke:
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AnzahlPrivatkunde
7+3.42 EUR
75+2.74 EUR
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TK6Q60W,S1VQ TK6Q60W_datasheet_en_20140105.pdf?did=13532&prodName=TK6Q60W
TK6Q60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.61 EUR
75+2.89 EUR
150+2.38 EUR
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TK8P60W,RVQ docget.jsp?did=13675&prodName=TK8P60W
TK8P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 8A DPAK
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Produkt ist nicht verfügbar
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TPH4R008NH,L1Q TPH4R008NH_datasheet_en_20191017.pdf?did=13444&prodName=TPH4R008NH
TPH4R008NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOP Advance (5x5)
auf Bestellung 8211 Stücke:
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3+7.96 EUR
10+5.22 EUR
100+3.68 EUR
500+3.09 EUR
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TPH4R008NH,L1Q TPH4R008NH_datasheet_en_20191017.pdf?did=13444&prodName=TPH4R008NH
TPH4R008NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+2.52 EUR
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TPH4R50ANH,L1Q TPH4R50ANH_datasheet_en_20191018.pdf?did=13446&prodName=TPH4R50ANH
TPH4R50ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 60A SOP ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+2.52 EUR
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TPN4R203NC,L1Q TPN4R203NC_datasheet_en_20191030.pdf?did=13633&prodName=TPN4R203NC
TPN4R203NC,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 23A 8TSON-ADV
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TK5P60W,RVQ TK5P60W_Rev3.0_9-17-14.pdf
TK5P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 5.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 7975 Stücke:
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AnzahlPrivatkunde
7+3.39 EUR
10+2.82 EUR
100+2.24 EUR
500+1.89 EUR
1000+1.61 EUR
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TK8Q60W,S1VQ docget.jsp?type=datasheet&lang=en&pid=TK8Q60W
TK8Q60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 8A IPAK
Produkt ist nicht verfügbar
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TK8P60W,RVQ docget.jsp?did=13675&prodName=TK8P60W
TK8P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TK12P60W,RVQ docget.jsp?did=13511&prodName=TK12P60W
TK12P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1698 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.19 EUR
10+3.37 EUR
100+2.31 EUR
500+1.86 EUR
1000+1.75 EUR
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TK12P60W,RVQ docget.jsp?did=13511&prodName=TK12P60W
TK12P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TK12Q60W,S1VQ docget.jsp?did=13513&prodName=TK12Q60W
TK12Q60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 17 Stücke:
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AnzahlPrivatkunde
4+6.26 EUR
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TK16G60W,RVQ docget.jsp?did=13520&prodName=TK16G60W
TK16G60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3.7V @ 790µA
auf Bestellung 981 Stücke:
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2+14.91 EUR
10+10.14 EUR
100+7.44 EUR
500+6.58 EUR
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TK16G60W,RVQ docget.jsp?did=13520&prodName=TK16G60W
TK16G60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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TPH2R306NH,L1Q TPH2R306NH_datasheet_en_20191024.pdf?did=13732&prodName=TPH2R306NH
TPH2R306NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
auf Bestellung 5003 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.52 EUR
10+2.92 EUR
100+1.99 EUR
500+1.59 EUR
1000+1.58 EUR
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TK16N60W,S1VF docget.jsp?did=13611&prodName=TK16N60W
TK16N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 20 Stücke:
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AnzahlPrivatkunde
3+8.54 EUR
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TK31N60W,S1VF docget.jsp?did=13612&prodName=TK31N60W
TK31N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 30.8A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
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TK39N60W,S1VF docget.jsp?did=13613&prodName=TK39N60W
TK39N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.58 EUR
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TK62N60W,S1VF docget.jsp?did=13614&prodName=TK62N60W
TK62N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO247
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 50 Stücke:
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1+35.5 EUR
30+22.8 EUR
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TK100L60W,VQ docget.jsp?did=13695&prodName=TK100L60W
TK100L60W,VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 100A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Power Dissipation (Max): 797W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 5mA
Supplier Device Package: TO-3P(L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
auf Bestellung 64 Stücke:
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1+52.99 EUR
10+38.63 EUR
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TPH2R306NH,L1Q TPH2R306NH_datasheet_en_20191024.pdf?did=13732&prodName=TPH2R306NH
TPH2R306NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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TB67H301FTG,EL TB67H301FTG_datasheet_en_20141001.pdf?did=14095&prodName=TB67H301FTG
TB67H301FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 24-WQFN (4x4)
Voltage - Load: 4.5V ~ 38V
Technology: BiCDMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 14270 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.81 EUR
11+2.05 EUR
25+1.86 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.44 EUR
2500+1.39 EUR
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TC78H600FTG,EL docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet
TC78H600FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
auf Bestellung 4818 Stücke:
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TC78H600FTG,EL docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet
TC78H600FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
Produkt ist nicht verfügbar
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TC94B15WBG(EB,NK2Z TC94B15WBG.pdf
TC94B15WBG(EB,NK2Z
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMP CLASS G STEREO 20WCSP
Produkt ist nicht verfügbar
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TC94B06WBG(EB,NKA) TC94B06WBG.pdf
TC94B06WBG(EB,NKA)
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMP CLASS G STEREO 16WCSP
Produkt ist nicht verfügbar
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TC62D902FG(C8,ELHZ docget.jsp?did=14182&prodName=TC62D902FG
TC62D902FG(C8,ELHZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TC78H600FTG,EL docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet
TC78H600FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TC35420XLG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
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TC35420XLG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
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JBTC94B12-AS(EB)
JBTC94B12-AS(EB)
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMPLIFIER ECM 6XFBGA
Produkt ist nicht verfügbar
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TC62D902FG(C8,ELHZ docget.jsp?did=14182&prodName=TC62D902FG
TC62D902FG(C8,ELHZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
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TC62D902FG(C8,ELHZ docget.jsp?did=14182&prodName=TC62D902FG
TC62D902FG(C8,ELHZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
Produkt ist nicht verfügbar
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TB6818FG,EL TB6818FG.pdf
TB6818FG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PFC CTRLR CCM 16SOP
Current - Startup: 30 µA
Supplier Device Package: 16-SSOP
Mode: Continuous Conduction (CCM)
Frequency - Switching: 20kHz ~ 150kHz
Voltage - Supply: 8.4V ~ 26V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOP (0.181", 4.60mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TB6819AFG,C,EL docget.jsp?did=12875&prodName=TB6819AFG
TB6819AFG,C,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PFC CTRLR CRM 150KHZ 8SOP
Current - Startup: 72.5 µA
Supplier Device Package: 8-SOP
Mode: Critical Conduction (CRM)
Frequency - Switching: 20kHz ~ 150kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply: 10V ~ 25V
Operating Temperature: -40°C ~ 85°C
Produkt ist nicht verfügbar
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TC35420XLG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TB67H301FTG,EL TB67H301FTG_datasheet_en_20141001.pdf?did=14095&prodName=TB67H301FTG
TB67H301FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 24-WQFN (4x4)
Voltage - Load: 4.5V ~ 38V
Technology: BiCDMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-WFQFN Exposed Pad
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.25 EUR
Mindestbestellmenge: 5000 Stücke
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DF6D7M1N,LF DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N
DF6D7M1N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 6DFN
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: 6-DFN (1.25x1)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.18 EUR
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DF6D7M1N,LF DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N
DF6D7M1N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 6DFN
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: 6-DFN (1.25x1)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
40+0.52 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
Mindestbestellmenge: 32 Stücke
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TCR2EE33,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE33,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA ESV
Protection Features: Over Current
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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