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TB62208FTG,8,EL TB62208FTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62208FTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3888 Stücke:
Lieferzeit 21-28 Tag (e)
TB62213AFG,8,EL TB62213AFG,8,EL Toshiba Semiconductor and Storage TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
TB62213AFTG,8,EL TB62213AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=22890&prodName=TB62213AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 1985 Stücke:
Lieferzeit 21-28 Tag (e)
TB62213AFTG,8,EL TB62213AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=22890&prodName=TB62213AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 1985 Stücke:
Lieferzeit 21-28 Tag (e)
TB62214AFTG,8,EL TB62214AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62214AFG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3372 Stücke:
Lieferzeit 21-28 Tag (e)
TB62214AFTG,8,EL TB62214AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62214AFG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3372 Stücke:
Lieferzeit 21-28 Tag (e)
TB62215AFTG,8,EL TB62215AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3995 Stücke:
Lieferzeit 21-28 Tag (e)
TB62215AFTG,8,EL TB62215AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3995 Stücke:
Lieferzeit 21-28 Tag (e)
TB62216FTG,8,EL TB62216FTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62216FTG Description: IC MOTOR DRIVER PAR 48QFN
Produkt ist nicht verfügbar
TB62216FTG,8,EL TB62216FTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62216FTG Description: IC MOTOR DRIVER PAR 48QFN
Produkt ist nicht verfügbar
TB62218AFTG,8,EL TB62218AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=13039&prodName=TB62218AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2823 Stücke:
Lieferzeit 21-28 Tag (e)
TB62218AFTG,8,EL TB62218AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=13039&prodName=TB62218AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2823 Stücke:
Lieferzeit 21-28 Tag (e)
TB6560AFTG,8,EL TB6560AFTG,8,EL Toshiba Semiconductor and Storage Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Part Status: Active
Produkt ist nicht verfügbar
TB6575FNG(O,C,8,EL Toshiba Semiconductor and Storage DST_TB6575FNG-TDE_EN_12013.pdf Description: IC MOTOR CONTROLLER PAR 24SSOP
auf Bestellung 4997 Stücke:
Lieferzeit 21-28 Tag (e)
TB6575FNG(O,C,8,EL Toshiba Semiconductor and Storage DST_TB6575FNG-TDE_EN_12013.pdf Description: IC MOTOR CONTROLLER PAR 24SSOP
auf Bestellung 4997 Stücke:
Lieferzeit 21-28 Tag (e)
TB62208FG,8,EL TB62208FG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=7125&prodName=TB62208FG Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
Produkt ist nicht verfügbar
TB62208FNG,C8,EL TB62208FNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62208FNG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 780 Stücke:
Lieferzeit 21-28 Tag (e)
TB62208FNG,C8,EL TB62208FNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62208FNG Description: IC MOTOR DRIVER PAR 48HTSSOP
Produkt ist nicht verfügbar
TB62212FNG,C8,EL TB62212FNG,C8,EL Toshiba Semiconductor and Storage TB62212FNG.pdf Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
auf Bestellung 453 Stücke:
Lieferzeit 21-28 Tag (e)
TB62212FTAG,C8,EL TB62212FTAG,C8,EL Toshiba Semiconductor and Storage TB62212FTAG_datasheet_en_20141001.pdf?did=6255&prodName=TB62212FTAG Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 6159 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.79 EUR
10+ 6.1 EUR
25+ 5.76 EUR
100+ 4.91 EUR
250+ 4.61 EUR
500+ 4.03 EUR
1000+ 3.34 EUR
Mindestbestellmenge: 4
TB62213AFNG,C8,EL TB62213AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=22889&prodName=TB62213AFNG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
TB62213AFNG,C8,EL TB62213AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=22889&prodName=TB62213AFNG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
TB62214AFG,8,EL TB62214AFG,8,EL Toshiba Semiconductor and Storage TB62214AFG_Summary.pdf Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
TB62214AFNG,C8,EL TB62214AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=13036&prodName=TB62214AFNG Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
auf Bestellung 3032 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.44 EUR
10+ 6.67 EUR
25+ 6.29 EUR
100+ 5.36 EUR
250+ 5.03 EUR
500+ 4.41 EUR
Mindestbestellmenge: 4
TB62215AFG,8,EL TB62215AFG,8,EL Toshiba Semiconductor and Storage TB62215AFG_Summary.pdf Description: IC MOTOR DRIVER PAR 28HSOP
auf Bestellung 1528 Stücke:
Lieferzeit 21-28 Tag (e)
TB62215AFG,8,EL TB62215AFG,8,EL Toshiba Semiconductor and Storage TB62215AFG_Summary.pdf Description: IC MOTOR DRIVER PAR 28HSOP
auf Bestellung 1528 Stücke:
Lieferzeit 21-28 Tag (e)
TB62215AFNG,C8,EL TB62215AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 983 Stücke:
Lieferzeit 21-28 Tag (e)
TB62215AFNG,C8,EL TB62215AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 983 Stücke:
Lieferzeit 21-28 Tag (e)
TB62216FG,8,EL TB62216FG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62216FG Description: IC MOTOR DRIVER PAR 28HSOP
Produkt ist nicht verfügbar
TB62216FG,8,EL TB62216FG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62216FG Description: IC MOTOR DRIVER PAR 28HSOP
Produkt ist nicht verfügbar
TC7SZU04FUTF TC7SZU04FUTF Toshiba Semiconductor and Storage docget.jsp?did=20044&prodName=TC7SZU04F Description: IC INVERTER 1CH 1-INP USV
Produkt ist nicht verfügbar
TC74LVX373FW TC74LVX373FW Toshiba Semiconductor and Storage 886.pdf Description: IC LATCH OCTAL D-TYPE 20-SOL
auf Bestellung 2360 Stücke:
Lieferzeit 21-28 Tag (e)
TK10A60W,S4VX TK10A60W,S4VX Toshiba Semiconductor and Storage TK10A60W_datasheet_en_20131225.pdf?did=13486&prodName=TK10A60W Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.42 EUR
Mindestbestellmenge: 5
TK16A60W,S4VX TK16A60W,S4VX Toshiba Semiconductor and Storage TK16A60W_datasheet_en_20131225.pdf?did=13490&prodName=TK16A60W Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.84 EUR
Mindestbestellmenge: 4
TK56E12N1,S1X TK56E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13465&prodName=TK56E12N1 Description: MOSFET N CH 120V 56A TO-220
Produkt ist nicht verfügbar
TK72E12N1,S1X TK72E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13466&prodName=TK72E12N1 Description: MOSFET N CH 120V 72A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
Produkt ist nicht verfügbar
TPH1400ANH,L1Q TPH1400ANH,L1Q Toshiba Semiconductor and Storage TPH1400ANH_datasheet_en_20140217.pdf?did=12774&prodName=TPH1400ANH Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Produkt ist nicht verfügbar
TPH8R80ANH,L1Q TPH8R80ANH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=12776&prodName=TPH8R80ANH Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.95 EUR
10000+ 1.88 EUR
Mindestbestellmenge: 5000
TPN22006NH,LQ TPN22006NH,LQ Toshiba Semiconductor and Storage docget.jsp?did=13666&prodName=TPN22006NH Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12
Input Capacitance (Ciss) (Max) @ Vds: 710
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.92 EUR
Mindestbestellmenge: 3000
TPN30008NH,LQ TPN30008NH,LQ Toshiba Semiconductor and Storage docget.jsp?did=13035&prodName=TPN30008NH Description: MOSFET N-CH 80V 9.6A 8TSON
Produkt ist nicht verfügbar
TPN3300ANH,LQ TPN3300ANH,LQ Toshiba Semiconductor and Storage TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.88 EUR
6000+ 0.84 EUR
9000+ 0.8 EUR
Mindestbestellmenge: 3000
TPH1400ANH,L1Q TPH1400ANH,L1Q Toshiba Semiconductor and Storage TPH1400ANH_datasheet_en_20140217.pdf?did=12774&prodName=TPH1400ANH Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 4458 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
10+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
2000+ 1.42 EUR
Mindestbestellmenge: 8
TPH8R80ANH,L1Q TPH8R80ANH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=12776&prodName=TPH8R80ANH Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 29944 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.42 EUR
10+ 3.98 EUR
100+ 3.2 EUR
500+ 2.63 EUR
1000+ 2.18 EUR
2000+ 2.03 EUR
Mindestbestellmenge: 6
TPN22006NH,LQ TPN22006NH,LQ Toshiba Semiconductor and Storage docget.jsp?did=13666&prodName=TPN22006NH Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12
Input Capacitance (Ciss) (Max) @ Vds: 710
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.39 EUR
13+ 2.1 EUR
100+ 1.61 EUR
500+ 1.27 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 11
TPN30008NH,LQ TPN30008NH,LQ Toshiba Semiconductor and Storage docget.jsp?did=13035&prodName=TPN30008NH Description: MOSFET N-CH 80V 9.6A 8TSON
auf Bestellung 158 Stücke:
Lieferzeit 21-28 Tag (e)
TPN3300ANH,LQ TPN3300ANH,LQ Toshiba Semiconductor and Storage TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 15884 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.11 EUR
15+ 1.74 EUR
100+ 1.35 EUR
500+ 1.15 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 13
TK42E12N1,S1X TK42E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13464&prodName=TK42E12N1 Description: MOSFET N CH 120V 88A TO-220
Produkt ist nicht verfügbar
TK6A60W,S4VX TK6A60W,S4VX Toshiba Semiconductor and Storage TK6A60W_datasheet_en_20140105.pdf?did=13527&prodName=TK6A60W Description: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.2 EUR
Mindestbestellmenge: 5
TPN2R503NC,L1Q TPN2R503NC,L1Q Toshiba Semiconductor and Storage docget.jsp?did=13638&prodName=TPN2R503NC Description: MOSFET N CH 30V 40A 8TSON-ADV
Produkt ist nicht verfügbar
TPN2R503NC,L1Q TPN2R503NC,L1Q Toshiba Semiconductor and Storage docget.jsp?did=13638&prodName=TPN2R503NC Description: MOSFET N CH 30V 40A 8TSON-ADV
Produkt ist nicht verfügbar
TK31J60W5,S1VQ TK31J60W5,S1VQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK31J60W5 Description: MOSFET N-CH 600V 30.8A TO-3P(N)
Produkt ist nicht verfügbar
TK39J60W,S1VQ TK39J60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?did=13496&prodName=TK39J60W Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
1+27.87 EUR
TK39J60W5,S1VQ TK39J60W5,S1VQ Toshiba Semiconductor and Storage TK39J60W5_datasheet_en_20131226.pdf?did=13749&prodName=TK39J60W5 Description: MOSFET N-CH 600V 38.8A TO3P
auf Bestellung 26 Stücke:
Lieferzeit 21-28 Tag (e)
1+28.89 EUR
10+ 26.09 EUR
TK31E60W,S1VX TK31E60W,S1VX Toshiba Semiconductor and Storage docget.jsp?did=13524&prodName=TK31E60W Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
TK31J60W,S1VQ TK31J60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?did=13525&prodName=TK31J60W Description: MOSFET N-CH 600V 30.8A TO3P
Produkt ist nicht verfügbar
TK7P60W,RVQ TK7P60W,RVQ Toshiba Semiconductor and Storage TK7P60W_datasheet_en_20140917.pdf?did=13578&prodName=TK7P60W Description: MOSFET N CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
TK7P60W,RVQ TK7P60W,RVQ Toshiba Semiconductor and Storage TK7P60W_datasheet_en_20140917.pdf?did=13578&prodName=TK7P60W Description: MOSFET N CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 1994 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.89 EUR
10+ 4.08 EUR
100+ 3.24 EUR
500+ 2.74 EUR
1000+ 2.33 EUR
Mindestbestellmenge: 6
TK32E12N1,S1X TK32E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13460&prodName=TK32E12N1 Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
auf Bestellung 14 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.72 EUR
10+ 3.35 EUR
Mindestbestellmenge: 7
TPN6R303NC,LQ Toshiba Semiconductor and Storage docget.jsp?did=13640&prodName=TPN6R303NC Description: MOSFET N CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
TPN6R303NC,LQ Toshiba Semiconductor and Storage docget.jsp?did=13640&prodName=TPN6R303NC Description: MOSFET N CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
TB62208FTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62208FTG
TB62208FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3888 Stücke:
Lieferzeit 21-28 Tag (e)
TB62213AFG,8,EL TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG
TB62213AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
TB62213AFTG,8,EL docget.jsp?did=22890&prodName=TB62213AFTG
TB62213AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 1985 Stücke:
Lieferzeit 21-28 Tag (e)
TB62213AFTG,8,EL docget.jsp?did=22890&prodName=TB62213AFTG
TB62213AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 1985 Stücke:
Lieferzeit 21-28 Tag (e)
TB62214AFTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62214AFG
TB62214AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3372 Stücke:
Lieferzeit 21-28 Tag (e)
TB62214AFTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62214AFG
TB62214AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3372 Stücke:
Lieferzeit 21-28 Tag (e)
TB62215AFTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG
TB62215AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3995 Stücke:
Lieferzeit 21-28 Tag (e)
TB62215AFTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG
TB62215AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3995 Stücke:
Lieferzeit 21-28 Tag (e)
TB62216FTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62216FTG
TB62216FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Produkt ist nicht verfügbar
TB62216FTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62216FTG
TB62216FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Produkt ist nicht verfügbar
TB62218AFTG,8,EL docget.jsp?did=13039&prodName=TB62218AFTG
TB62218AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2823 Stücke:
Lieferzeit 21-28 Tag (e)
TB62218AFTG,8,EL docget.jsp?did=13039&prodName=TB62218AFTG
TB62218AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2823 Stücke:
Lieferzeit 21-28 Tag (e)
TB6560AFTG,8,EL
TB6560AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Part Status: Active
Produkt ist nicht verfügbar
TB6575FNG(O,C,8,EL DST_TB6575FNG-TDE_EN_12013.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 24SSOP
auf Bestellung 4997 Stücke:
Lieferzeit 21-28 Tag (e)
TB6575FNG(O,C,8,EL DST_TB6575FNG-TDE_EN_12013.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 24SSOP
auf Bestellung 4997 Stücke:
Lieferzeit 21-28 Tag (e)
TB62208FG,8,EL docget.jsp?did=7125&prodName=TB62208FG
TB62208FG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
Produkt ist nicht verfügbar
TB62208FNG,C8,EL docget.jsp?type=datasheet&lang=en&pid=TB62208FNG
TB62208FNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 780 Stücke:
Lieferzeit 21-28 Tag (e)
TB62208FNG,C8,EL docget.jsp?type=datasheet&lang=en&pid=TB62208FNG
TB62208FNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Produkt ist nicht verfügbar
TB62212FNG,C8,EL TB62212FNG.pdf
TB62212FNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
auf Bestellung 453 Stücke:
Lieferzeit 21-28 Tag (e)
TB62212FTAG,C8,EL TB62212FTAG_datasheet_en_20141001.pdf?did=6255&prodName=TB62212FTAG
TB62212FTAG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 6159 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.79 EUR
10+ 6.1 EUR
25+ 5.76 EUR
100+ 4.91 EUR
250+ 4.61 EUR
500+ 4.03 EUR
1000+ 3.34 EUR
Mindestbestellmenge: 4
TB62213AFNG,C8,EL docget.jsp?did=22889&prodName=TB62213AFNG
TB62213AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
TB62213AFNG,C8,EL docget.jsp?did=22889&prodName=TB62213AFNG
TB62213AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
TB62214AFG,8,EL TB62214AFG_Summary.pdf
TB62214AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
TB62214AFNG,C8,EL docget.jsp?did=13036&prodName=TB62214AFNG
TB62214AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
auf Bestellung 3032 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.44 EUR
10+ 6.67 EUR
25+ 6.29 EUR
100+ 5.36 EUR
250+ 5.03 EUR
500+ 4.41 EUR
Mindestbestellmenge: 4
TB62215AFG,8,EL TB62215AFG_Summary.pdf
TB62215AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
auf Bestellung 1528 Stücke:
Lieferzeit 21-28 Tag (e)
TB62215AFG,8,EL TB62215AFG_Summary.pdf
TB62215AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
auf Bestellung 1528 Stücke:
Lieferzeit 21-28 Tag (e)
TB62215AFNG,C8,EL docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG
TB62215AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 983 Stücke:
Lieferzeit 21-28 Tag (e)
TB62215AFNG,C8,EL docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG
TB62215AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 983 Stücke:
Lieferzeit 21-28 Tag (e)
TB62216FG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62216FG
TB62216FG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Produkt ist nicht verfügbar
TB62216FG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62216FG
TB62216FG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Produkt ist nicht verfügbar
TC7SZU04FUTF docget.jsp?did=20044&prodName=TC7SZU04F
TC7SZU04FUTF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP USV
Produkt ist nicht verfügbar
TC74LVX373FW 886.pdf
TC74LVX373FW
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-SOL
auf Bestellung 2360 Stücke:
Lieferzeit 21-28 Tag (e)
TK10A60W,S4VX TK10A60W_datasheet_en_20131225.pdf?did=13486&prodName=TK10A60W
TK10A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.42 EUR
Mindestbestellmenge: 5
TK16A60W,S4VX TK16A60W_datasheet_en_20131225.pdf?did=13490&prodName=TK16A60W
TK16A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.84 EUR
Mindestbestellmenge: 4
TK56E12N1,S1X docget.jsp?did=13465&prodName=TK56E12N1
TK56E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 56A TO-220
Produkt ist nicht verfügbar
TK72E12N1,S1X docget.jsp?did=13466&prodName=TK72E12N1
TK72E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 72A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
Produkt ist nicht verfügbar
TPH1400ANH,L1Q TPH1400ANH_datasheet_en_20140217.pdf?did=12774&prodName=TPH1400ANH
TPH1400ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Produkt ist nicht verfügbar
TPH8R80ANH,L1Q docget.jsp?did=12776&prodName=TPH8R80ANH
TPH8R80ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+1.95 EUR
10000+ 1.88 EUR
Mindestbestellmenge: 5000
TPN22006NH,LQ docget.jsp?did=13666&prodName=TPN22006NH
TPN22006NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12
Input Capacitance (Ciss) (Max) @ Vds: 710
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.92 EUR
Mindestbestellmenge: 3000
TPN30008NH,LQ docget.jsp?did=13035&prodName=TPN30008NH
TPN30008NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 9.6A 8TSON
Produkt ist nicht verfügbar
TPN3300ANH,LQ TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH
TPN3300ANH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.88 EUR
6000+ 0.84 EUR
9000+ 0.8 EUR
Mindestbestellmenge: 3000
TPH1400ANH,L1Q TPH1400ANH_datasheet_en_20140217.pdf?did=12774&prodName=TPH1400ANH
TPH1400ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 4458 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
10+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
2000+ 1.42 EUR
Mindestbestellmenge: 8
TPH8R80ANH,L1Q docget.jsp?did=12776&prodName=TPH8R80ANH
TPH8R80ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 29944 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.42 EUR
10+ 3.98 EUR
100+ 3.2 EUR
500+ 2.63 EUR
1000+ 2.18 EUR
2000+ 2.03 EUR
Mindestbestellmenge: 6
TPN22006NH,LQ docget.jsp?did=13666&prodName=TPN22006NH
TPN22006NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12
Input Capacitance (Ciss) (Max) @ Vds: 710
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.39 EUR
13+ 2.1 EUR
100+ 1.61 EUR
500+ 1.27 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 11
TPN30008NH,LQ docget.jsp?did=13035&prodName=TPN30008NH
TPN30008NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 9.6A 8TSON
auf Bestellung 158 Stücke:
Lieferzeit 21-28 Tag (e)
TPN3300ANH,LQ TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH
TPN3300ANH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 15884 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.11 EUR
15+ 1.74 EUR
100+ 1.35 EUR
500+ 1.15 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 13
TK42E12N1,S1X docget.jsp?did=13464&prodName=TK42E12N1
TK42E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 88A TO-220
Produkt ist nicht verfügbar
TK6A60W,S4VX TK6A60W_datasheet_en_20140105.pdf?did=13527&prodName=TK6A60W
TK6A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.2 EUR
Mindestbestellmenge: 5
TPN2R503NC,L1Q docget.jsp?did=13638&prodName=TPN2R503NC
TPN2R503NC,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 40A 8TSON-ADV
Produkt ist nicht verfügbar
TPN2R503NC,L1Q docget.jsp?did=13638&prodName=TPN2R503NC
TPN2R503NC,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 40A 8TSON-ADV
Produkt ist nicht verfügbar
TK31J60W5,S1VQ docget.jsp?type=datasheet&lang=en&pid=TK31J60W5
TK31J60W5,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO-3P(N)
Produkt ist nicht verfügbar
TK39J60W,S1VQ docget.jsp?did=13496&prodName=TK39J60W
TK39J60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+27.87 EUR
TK39J60W5,S1VQ TK39J60W5_datasheet_en_20131226.pdf?did=13749&prodName=TK39J60W5
TK39J60W5,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO3P
auf Bestellung 26 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+28.89 EUR
10+ 26.09 EUR
TK31E60W,S1VX docget.jsp?did=13524&prodName=TK31E60W
TK31E60W,S1VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
TK31J60W,S1VQ docget.jsp?did=13525&prodName=TK31J60W
TK31J60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO3P
Produkt ist nicht verfügbar
TK7P60W,RVQ TK7P60W_datasheet_en_20140917.pdf?did=13578&prodName=TK7P60W
TK7P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
TK7P60W,RVQ TK7P60W_datasheet_en_20140917.pdf?did=13578&prodName=TK7P60W
TK7P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 1994 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.89 EUR
10+ 4.08 EUR
100+ 3.24 EUR
500+ 2.74 EUR
1000+ 2.33 EUR
Mindestbestellmenge: 6
TK32E12N1,S1X docget.jsp?did=13460&prodName=TK32E12N1
TK32E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
auf Bestellung 14 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.72 EUR
10+ 3.35 EUR
Mindestbestellmenge: 7
TPN6R303NC,LQ docget.jsp?did=13640&prodName=TPN6R303NC
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
TPN6R303NC,LQ docget.jsp?did=13640&prodName=TPN6R303NC
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
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