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TC4049BF-ELNF TC4049BF-ELNF Toshiba Semiconductor and Storage TC4049BF_datasheet_en_20140301.pdf?did=18381&prodName=TC4049BF Description: IC INVERTER 6CH 1-INP 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8mA, 48mA
Number of Inputs: 1
Supplier Device Package: 16-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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TC4051BFTELN TC4051BFTELN Toshiba Semiconductor and Storage TC4052BF_datasheet_en_20160115.pdf?did=18603&prodName=TC4052BF Description: IC MUX 8:1 160OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 20MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1.5MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
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TC4052BFTELN TC4052BFTELN Toshiba Semiconductor and Storage docget.jsp?did=18603&prodName=TC4052BFT Description: IC MUX/DEMUX 4X1 TSSOP
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TC4066BFTELN TC4066BFTELN Toshiba Semiconductor and Storage docget.jsp?did=18812&prodName=TC4066BF Description: IC BILATERAL SW 1 X 1:1 14TSSOP
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TC4069UBFTELN TC4069UBFTELN Toshiba Semiconductor and Storage docget.jsp?did=2724&prodName=TC4069UBP Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
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TC4S71FT5LFT TC4S71FT5LFT Toshiba Semiconductor and Storage docget.jsp?did=20161&prodName=TC4S71F Description: IC GATE OR 1CH 2-INP SMV
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TC4S81FT5LFT TC4S81FT5LFT Toshiba Semiconductor and Storage docget.jsp?did=20156&prodName=TC4S81F Description: IC GATE AND 1CH 2-INP SMV
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TC74HC4052AFTEL TC74HC4052AFTEL Toshiba Semiconductor and Storage docget.jsp?did=16132&prodName=TC74HC4051AF Description: IC MUX/DEMUX 4X1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 140MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 18ns, 29ns (Typ)
Channel Capacitance (CS(off), CD(off)): 2pF, 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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TC74HC4053AFTEL TC74HC4053AFTEL Toshiba Semiconductor and Storage docget.jsp?did=16132&prodName=TC74HC4051AF Description: IC MUX/DEMUX 2X1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Multiplexer/Demultiplexer Circuit: 3:1
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TC74HC4066AFTEL TC74HC4066AFTEL Toshiba Semiconductor and Storage docget.jsp?did=16175&prodName=TC74HC4066AF Description: IC SWITCH QUAD BILATERAL 14TSSOP
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TC75S56FUTE85LF TC75S56FUTE85LF Toshiba Semiconductor and Storage TC75S56F_datasheet_en_20190911.pdf?did=20995&prodName=TC75S56F Description: IC COMPARATOR 1 GEN PUR 5SSOP
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 680ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
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TC75S58F,LF TC75S58F,LF Toshiba Semiconductor and Storage TC75S58F_datasheet_en_20190911.pdf?did=21000&prodName=TC75S58F Description: IC COMPARATOR 1 GEN PUR SMV
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 800ns
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TC75S58FUTE85LF TC75S58FUTE85LF Toshiba Semiconductor and Storage TC75S58F_datasheet_en_20190911.pdf?did=21000&prodName=TC75S58F Description: IC COMPARATOR 1 GEN PUR 5SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 800ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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TC75W56FK,LF TC75W56FK,LF Toshiba Semiconductor and Storage docget.jsp?did=21013&prodName=TC75W56FK Description: IC COMPARATOR 2CH 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 40µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
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TC75W57FKTE85LF TC75W57FKTE85LF Toshiba Semiconductor and Storage TC75W57FU_datasheet_en_20140301.pdf?did=21015&prodName=TC75W57FU Description: IC COMP DUAL GP PP CMOS US8
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 400µA
Propagation Delay (Max): 140ns
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TC7S14FU,LF TC7S14FU,LF Toshiba Semiconductor and Storage TC7S14F_datasheet_en_20140301.pdf?did=20193&prodName=TC7S14F Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.3V ~ 1.5V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
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TC7S66F,LF TC7S66F,LF Toshiba Semiconductor and Storage TC7S66FU_datasheet_en_20140301.pdf?did=20195&prodName=TC7S66FU Description: IC BILATERAL SWITCH 1 X 1:1 SMV
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMV
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 2V ~ 12V
Operating Temperature: -40°C ~ 85°C
Type: Bilateral, FET Switches
Circuit: 1 x 1:1
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TC7S66FUT5LFT TC7S66FUT5LFT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7S66F Description: IC GATE USV L-MOS SMV
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TC7SET17FTE85LF TC7SET17FTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SET17F Description: IC GATE SMV L-MOS SMV
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TC7SH00FSTPL3 TC7SH00FSTPL3 Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH00FS Description: IC GATE NAND 1CH 2-INP FSV
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TC7SH02FSTPL3 TC7SH02FSTPL3 Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH02FS Description: IC GATE NOR 1CH 2-INP FSV
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TC7SH125FSTPL3 TC7SH125FSTPL3 Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH125FS Description: IC GATE L-MOS FSV
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TC7SH126FSTPL3 TC7SH126FSTPL3 Toshiba Semiconductor and Storage docget.jsp?did=552&prodName=TC7SH126FS Description: IC BUFFER NON-INVERT 5.5V FSV
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TC7SH14FSTPL3 TC7SH14FSTPL3 Toshiba Semiconductor and Storage docget.jsp?did=546&prodName=TC7SH14FS Description: IC INVERTER SCHMITT 1CH FSV
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TC7SH86FSTPL3 TC7SH86FSTPL3 Toshiba Semiconductor and Storage Description: IC GATE XOR 1CH 2-INP FSV
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
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1SS250(TE85L,F) 1SS250(TE85L,F) Toshiba Semiconductor and Storage Description: DIODE GEN PURP 200V 100MA SC59
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
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1SS295(TE85L,F) 1SS295(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=1SS295 Description: DIODE ARRAY SCHOTTKY 4V SC59-3
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1SS308(TE85L,F 1SS308(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=3303&prodName=1SS308 Description: DIODE ARRAY GP 80V 100MA SMV
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMV
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 4 Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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1SS319(TE85L,F) 1SS319(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=3309&prodName=1SS319 Description: DIODE ARR SCHOTT 40V 100MA SC61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
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1SS352,H3F 1SS352,H3F Toshiba Semiconductor and Storage docget.jsp?did=3327&prodName=1SS352 Description: DIODE STANDARD 80V 100MA SC762
Packaging: Cut Tape (CT)
Package / Case: SC-76A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-76-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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1SS361CT(TPL3) 1SS361CT(TPL3) Toshiba Semiconductor and Storage 1SS361CT_datasheet_en_20140301.pdf?did=22018&prodName=1SS361CT Description: DIODE ARRAY GP 80V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: CST3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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1SS361(T5L,F,T) 1SS361(T5L,F,T) Toshiba Semiconductor and Storage DST_1SS361-TDE_EN_1792.pdf Description: DIODE SW 80V 100MA SSM
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1SS374(TE85L,F) 1SS374(TE85L,F) Toshiba Semiconductor and Storage 1SS374_datasheet_en_20171030.pdf?did=3349&prodName=1SS374 Description: DIODE ARR SCHOTT 10V 100MA SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
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1SS378(TE85L,F) 1SS378(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=3353&prodName=1SS378 Description: DIODE ARR SCHOTT 10V 100MA SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 47261 Stücke:
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1SS383(TE85L,F) 1SS383(TE85L,F) Toshiba Semiconductor and Storage 1SS383_datasheet_en_20150115.pdf?did=3360&prodName=1SS383 Description: DIODE ARRAY SCHOTT 40V 100MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 63010 Stücke:
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1SS387CT,L3F 1SS387CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=22013&prodName=1SS387CT Description: DIODE STANDARD 80V 100MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 251115 Stücke:
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1SS392,LF 1SS392,LF Toshiba Semiconductor and Storage docget.jsp?did=3375&prodName=1SS392 Description: DIODE ARR SCHOTT 40V 100MA SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 1685 Stücke:
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1SS401(TE85L,F) 1SS401(TE85L,F) Toshiba Semiconductor and Storage 1SS401_datasheet_en_20140301.pdf?did=3393&prodName=1SS401 Description: DIODE SCHOTTKY 20V 300MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 2719 Stücke:
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1SS413,L3M 1SS413,L3M Toshiba Semiconductor and Storage docget.jsp?did=22694&prodName=1SS413 Description: DIODE SCHOTTKY 20V 50MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 62708 Stücke:
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1SS416CT,L3F 1SS416CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=22034&prodName=1SS416CT Description: DIODE SCHOTTKY 30V 100MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 11905 Stücke:
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1SS416(TL3,T) 1SS416(TL3,T) Toshiba Semiconductor and Storage 1SS416_en_datasheet_071101.pdf Description: DIODE SCHOTTKY 30V 100MA FSC
Produkt ist nicht verfügbar
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1SS423(TE85L,F) 1SS423(TE85L,F) Toshiba Semiconductor and Storage 1SS423_datasheet_en_20220720.pdf?did=4401&prodName=1SS423 Description: DIODE ARRAY SCHOTT 40V 100MA SSM
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SSM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 12719 Stücke:
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1SS424(TPL3,F) 1SS424(TPL3,F) Toshiba Semiconductor and Storage 1SS424_datasheet_en_20140301.pdf?did=4402&prodName=1SS424 Description: DIODE SCHOTTKY 20V 200MA ESC
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ESC
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 16950 Stücke:
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72+0.3 EUR
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2SA1163-BL,LF 2SA1163-BL,LF Toshiba Semiconductor and Storage docget.jsp?did=19353&prodName=2SA1163 Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
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2SA1312-BL(TE85L,F 2SA1312-BL(TE85L,F Toshiba Semiconductor and Storage Description: TRANS PNP 120V 0.1A S-MINI
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: S-Mini
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SA1588-Y,LF 2SA1588-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19174&prodName=2SA1588 Description: TRANS PNP 30V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 7516 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
89+0.24 EUR
144+0.14 EUR
500+0.11 EUR
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2SA1618-GR(TE85L,F 2SA1618-GR(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=19176&prodName=2SA1618 Description: TRANS 2PNP 50V 0.15A SMV
Produkt ist nicht verfügbar
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2SA1832-GR,LF 2SA1832-GR,LF Toshiba Semiconductor and Storage 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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91+0.23 EUR
139+0.15 EUR
206+0.1 EUR
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2SA1873-GR(TE85L,F 2SA1873-GR(TE85L,F Toshiba Semiconductor and Storage 2SA1873-%28G%2CY%29.pdf Description: TRANS 2PNP 50V 150MA USV
Part Status: Active
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 4983 Stücke:
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70+0.3 EUR
112+0.19 EUR
500+0.14 EUR
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2SA1873-Y(TE85L,F) 2SA1873-Y(TE85L,F) Toshiba Semiconductor and Storage 2SA1873-%28G%2CY%29.pdf Description: TRANS 2PNP 50V 150MA USV
Part Status: Active
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 5918 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.58 EUR
60+0.36 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
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2SA2154CT-GR,L3F 2SA2154CT-GR,L3F Toshiba Semiconductor and Storage docget.jsp?did=711&prodName=2SA2154CT Description: TRANS PNP 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 15620 Stücke:
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70+0.3 EUR
113+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.093 EUR
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2SC2714-Y(TE85L,F) 2SC2714-Y(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=17590&prodName=2SC2714 Description: RF TRANS NPN 30V 550MHZ S MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
auf Bestellung 7860 Stücke:
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31+0.69 EUR
50+0.43 EUR
100+0.27 EUR
500+0.2 EUR
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2SC3138-Y(TE85L,F) 2SC3138-Y(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS NPN 200V 0.05A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC3265-Y,LF 2SC3265-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19281&prodName=2SC3265 Description: TRANS NPN 25V 0.8A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
auf Bestellung 2080 Stücke:
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30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
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2SC3326-A,LF 2SC3326-A,LF Toshiba Semiconductor and Storage docget.jsp?did=19249&prodName=2SC3326 Description: TRANS NPN 20V 0.3A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 31689 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.67 EUR
52+0.4 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
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2SC4207-GR(TE85L,F 2SC4207-GR(TE85L,F Toshiba Semiconductor and Storage 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207 Description: TRANS 2NPN 50V 150MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 16139 Stücke:
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34+0.63 EUR
56+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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2SC4207-Y(TE85L,F) 2SC4207-Y(TE85L,F) Toshiba Semiconductor and Storage 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207 Description: TRANS 2NPN 50V 150MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
auf Bestellung 33956 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
61+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
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2SC4215-Y(TE85L,F) 2SC4215-Y(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 30V 550MHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 17dB ~ 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Supplier Device Package: SC-70
Part Status: Active
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2SC4738-Y,LF 2SC4738-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19314&prodName=2SC4738 Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
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2SC4944-GR(TE85L,F 2SC4944-GR(TE85L,F Toshiba Semiconductor and Storage 2SC4944_datasheet_en_20210625.pdf?did=19320&prodName=2SC4944 Description: TRANS NPN 50V 0.15A USV
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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TC4049BF-ELNF TC4049BF_datasheet_en_20140301.pdf?did=18381&prodName=TC4049BF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8mA, 48mA
Number of Inputs: 1
Supplier Device Package: 16-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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TC4051BFTELN TC4052BF_datasheet_en_20160115.pdf?did=18603&prodName=TC4052BF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX 8:1 160OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 20MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1.5MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
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TC4052BFTELN docget.jsp?did=18603&prodName=TC4052BFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4X1 TSSOP
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TC4066BFTELN docget.jsp?did=18812&prodName=TC4066BF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BILATERAL SW 1 X 1:1 14TSSOP
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TC4069UBFTELN docget.jsp?did=2724&prodName=TC4069UBP
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
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TC4S71FT5LFT docget.jsp?did=20161&prodName=TC4S71F
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV
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TC4S81FT5LFT docget.jsp?did=20156&prodName=TC4S81F
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
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TC74HC4052AFTEL docget.jsp?did=16132&prodName=TC74HC4051AF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4X1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 140MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 18ns, 29ns (Typ)
Channel Capacitance (CS(off), CD(off)): 2pF, 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
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TC74HC4053AFTEL docget.jsp?did=16132&prodName=TC74HC4051AF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 2X1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Multiplexer/Demultiplexer Circuit: 3:1
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TC74HC4066AFTEL docget.jsp?did=16175&prodName=TC74HC4066AF
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH QUAD BILATERAL 14TSSOP
Produkt ist nicht verfügbar
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TC75S56FUTE85LF TC75S56F_datasheet_en_20190911.pdf?did=20995&prodName=TC75S56F
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 680ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
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TC75S58F,LF TC75S58F_datasheet_en_20190911.pdf?did=21000&prodName=TC75S58F
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 800ns
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TC75S58FUTE85LF TC75S58F_datasheet_en_20190911.pdf?did=21000&prodName=TC75S58F
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 800ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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TC75W56FK,LF docget.jsp?did=21013&prodName=TC75W56FK
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2CH 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 40µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
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34+0.63 EUR
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TC75W57FKTE85LF TC75W57FU_datasheet_en_20140301.pdf?did=21015&prodName=TC75W57FU
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMP DUAL GP PP CMOS US8
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 400µA
Propagation Delay (Max): 140ns
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TC7S14FU,LF TC7S14F_datasheet_en_20140301.pdf?did=20193&prodName=TC7S14F
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.3V ~ 1.5V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
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TC7S66F,LF TC7S66FU_datasheet_en_20140301.pdf?did=20195&prodName=TC7S66FU
Hersteller: Toshiba Semiconductor and Storage
Description: IC BILATERAL SWITCH 1 X 1:1 SMV
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMV
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 2V ~ 12V
Operating Temperature: -40°C ~ 85°C
Type: Bilateral, FET Switches
Circuit: 1 x 1:1
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TC7S66FUT5LFT docget.jsp?type=datasheet&lang=en&pid=TC7S66F
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE USV L-MOS SMV
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TC7SET17FTE85LF docget.jsp?type=datasheet&lang=en&pid=TC7SET17F
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE SMV L-MOS SMV
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TC7SH00FSTPL3 docget.jsp?type=datasheet&lang=en&pid=TC7SH00FS
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP FSV
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TC7SH02FSTPL3 docget.jsp?type=datasheet&lang=en&pid=TC7SH02FS
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP FSV
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TC7SH125FSTPL3 docget.jsp?type=datasheet&lang=en&pid=TC7SH125FS
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS FSV
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TC7SH126FSTPL3 docget.jsp?did=552&prodName=TC7SH126FS
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V FSV
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TC7SH14FSTPL3 docget.jsp?did=546&prodName=TC7SH14FS
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER SCHMITT 1CH FSV
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TC7SH86FSTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP FSV
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
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1SS250(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA SC59
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
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1SS295(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=1SS295
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 4V SC59-3
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1SS308(TE85L,F docget.jsp?did=3303&prodName=1SS308
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SMV
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMV
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 4 Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 9611 Stücke:
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36+0.58 EUR
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1SS319(TE85L,F) docget.jsp?did=3309&prodName=1SS319
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 40V 100MA SC61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
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1SS352,H3F docget.jsp?did=3327&prodName=1SS352
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SC762
Packaging: Cut Tape (CT)
Package / Case: SC-76A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-76-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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1SS361CT(TPL3) 1SS361CT_datasheet_en_20140301.pdf?did=22018&prodName=1SS361CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: CST3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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1SS361(T5L,F,T) DST_1SS361-TDE_EN_1792.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SW 80V 100MA SSM
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1SS374(TE85L,F) 1SS374_datasheet_en_20171030.pdf?did=3349&prodName=1SS374
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 10V 100MA SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
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1SS378(TE85L,F) docget.jsp?did=3353&prodName=1SS378
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 10V 100MA SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
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50+0.42 EUR
76+0.27 EUR
138+0.15 EUR
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1SS383(TE85L,F) 1SS383_datasheet_en_20150115.pdf?did=3360&prodName=1SS383
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 40V 100MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 63010 Stücke:
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33+0.65 EUR
52+0.4 EUR
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1SS387CT,L3F docget.jsp?did=22013&prodName=1SS387CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 251115 Stücke:
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48+0.44 EUR
80+0.26 EUR
128+0.17 EUR
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1SS392,LF docget.jsp?did=3375&prodName=1SS392
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 40V 100MA SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 1685 Stücke:
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35+0.61 EUR
56+0.38 EUR
100+0.24 EUR
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1SS401(TE85L,F) 1SS401_datasheet_en_20140301.pdf?did=3393&prodName=1SS401
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 300MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 2719 Stücke:
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39+0.55 EUR
62+0.35 EUR
100+0.21 EUR
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1SS413,L3M docget.jsp?did=22694&prodName=1SS413
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 62708 Stücke:
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44+0.48 EUR
72+0.3 EUR
115+0.18 EUR
500+0.13 EUR
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1SS416CT,L3F docget.jsp?did=22034&prodName=1SS416CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 11905 Stücke:
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44+0.48 EUR
72+0.3 EUR
115+0.18 EUR
500+0.13 EUR
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1SS416(TL3,T) 1SS416_en_datasheet_071101.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA FSC
Produkt ist nicht verfügbar
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1SS423(TE85L,F) 1SS423_datasheet_en_20220720.pdf?did=4401&prodName=1SS423
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 40V 100MA SSM
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SSM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 12719 Stücke:
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32+0.67 EUR
50+0.43 EUR
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1SS424(TPL3,F) 1SS424_datasheet_en_20140301.pdf?did=4402&prodName=1SS424
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 200MA ESC
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ESC
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 16950 Stücke:
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72+0.3 EUR
108+0.19 EUR
146+0.14 EUR
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2SA1163-BL,LF docget.jsp?did=19353&prodName=2SA1163
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 16970 Stücke:
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44+0.48 EUR
70+0.3 EUR
112+0.19 EUR
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2SA1312-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: S-Mini
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SA1588-Y,LF docget.jsp?did=19174&prodName=2SA1588
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 7516 Stücke:
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56+0.38 EUR
89+0.24 EUR
144+0.14 EUR
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2SA1618-GR(TE85L,F docget.jsp?did=19176&prodName=2SA1618
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SMV
Produkt ist nicht verfügbar
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2SA1832-GR,LF 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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91+0.23 EUR
139+0.15 EUR
206+0.1 EUR
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2SA1873-GR(TE85L,F 2SA1873-%28G%2CY%29.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 150MA USV
Part Status: Active
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 4983 Stücke:
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44+0.48 EUR
70+0.3 EUR
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2SA1873-Y(TE85L,F) 2SA1873-%28G%2CY%29.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 150MA USV
Part Status: Active
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 5918 Stücke:
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36+0.58 EUR
60+0.36 EUR
100+0.21 EUR
500+0.17 EUR
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2SA2154CT-GR,L3F docget.jsp?did=711&prodName=2SA2154CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 15620 Stücke:
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44+0.48 EUR
70+0.3 EUR
113+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.093 EUR
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2SC2714-Y(TE85L,F) docget.jsp?did=17590&prodName=2SC2714
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ S MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
auf Bestellung 7860 Stücke:
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31+0.69 EUR
50+0.43 EUR
100+0.27 EUR
500+0.2 EUR
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2SC3138-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 0.05A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC3265-Y,LF docget.jsp?did=19281&prodName=2SC3265
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 25V 0.8A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
auf Bestellung 2080 Stücke:
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30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
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2SC3326-A,LF docget.jsp?did=19249&prodName=2SC3326
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 31689 Stücke:
Lieferzeit 10-14 Tag (e)
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32+0.67 EUR
52+0.4 EUR
100+0.26 EUR
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2SC4207-GR(TE85L,F 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 150MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 16139 Stücke:
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34+0.63 EUR
56+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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2SC4207-Y(TE85L,F) 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 150MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
auf Bestellung 33956 Stücke:
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38+0.57 EUR
61+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
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2SC4215-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 17dB ~ 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Supplier Device Package: SC-70
Part Status: Active
auf Bestellung 1479 Stücke:
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23+0.92 EUR
32+0.67 EUR
100+0.33 EUR
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2SC4738-Y,LF docget.jsp?did=19314&prodName=2SC4738
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 7266 Stücke:
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59+0.36 EUR
98+0.21 EUR
158+0.13 EUR
500+0.096 EUR
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2SC4944-GR(TE85L,F 2SC4944_datasheet_en_20210625.pdf?did=19320&prodName=2SC4944
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A USV
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 8211 Stücke:
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36+0.58 EUR
60+0.36 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
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