Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13261) > Seite 48 nach 222
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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1SS416(TL3,T) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 100MA FSC |
Produkt ist nicht verfügbar |
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1SS417CT,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 100MA FSC Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 15pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: fSC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
auf Bestellung 38377 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS417,L3M | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 100MA FSC Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 15pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: fSC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 50 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
auf Bestellung 33393 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS423(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 40V 100MA SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SSM Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
auf Bestellung 10538 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS424(TPL3,F) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 200MA ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 20pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 20 V |
auf Bestellung 40010 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1163-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
auf Bestellung 35880 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1312-BL(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: S-Mini Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
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2SA1588-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 30V 0.5A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 100 mW |
auf Bestellung 10575 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1618-GR(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2PNP 50V 0.15A SMV |
Produkt ist nicht verfügbar |
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2SA1832-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1873-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A USV Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USV Part Status: Active |
auf Bestellung 6676 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1873-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A USV Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USV Part Status: Active |
auf Bestellung 5928 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2154CT-GR,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.1A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: CST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 20138 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2154CT-Y(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PNP 50V 0.1A CST3 |
Produkt ist nicht verfügbar |
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2SA2154MFV-GR(TPL3 | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: VESM Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
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2SC2714-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 30V 550MHZ SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 23dB Power - Max: 100mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Supplier Device Package: S-Mini Part Status: Active |
auf Bestellung 7911 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2859-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 30V 0.5A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: S-Mini Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
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2SC3138-Y(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN 200V 0.05A TO236 |
Produkt ist nicht verfügbar |
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2SC3265-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 25V 0.8A TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 120MHz Supplier Device Package: TO-236 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 200 mW |
auf Bestellung 2442 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3324-BL(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-236 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
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2SC3326-A,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 20V 0.3A TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V Frequency - Transition: 30MHz Supplier Device Package: TO-236 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 150 mW |
auf Bestellung 72751 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4207-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Common Emitter Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SMV Part Status: Active |
auf Bestellung 25153 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4207-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SMV |
auf Bestellung 38623 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4215-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 30V 550MHZ USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 17dB ~ 23dB Power - Max: 100mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz Supplier Device Package: SC-70 Part Status: Active |
auf Bestellung 1479 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4738-BL(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
Produkt ist nicht verfügbar |
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2SC4738-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 14089 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4944-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A USV Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USV Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 10131 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4944-Y(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A USV |
auf Bestellung 587 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5065-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 12dB ~ 17dB Power - Max: 100mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SC-70 Part Status: Active |
auf Bestellung 4819 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5084-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 11dB Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: S-Mini Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2SC5085-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 11dB ~ 16.5dB Power - Max: 100mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SC-70 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2SC5095-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 10V 10GHZ SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 13dB ~ 7dB Power - Max: 100mW Current - Collector (Ic) (Max): 15mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Supplier Device Package: SC-70 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2SC5095-R(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 10V 10GHZ SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 13dB ~ 7.5dB Power - Max: 100mW Current - Collector (Ic) (Max): 15mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Supplier Device Package: SC-70 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2SC6026CT-Y(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS NPN 50V 0.1A CST3 |
auf Bestellung 2124 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK209-BL(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 14MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 14 mA Supplier Device Package: SC-59 Part Status: Active Power - Max: 150 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V |
auf Bestellung 42276 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK209-GR(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 14MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 14 mA Supplier Device Package: SC-59 Part Status: Active Power - Max: 150 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V |
auf Bestellung 9472 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK209-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 14MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 14 mA Supplier Device Package: SC-59 Part Status: Active Power - Max: 150 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V |
auf Bestellung 23715 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK2145-BL(TE85L,F | Toshiba Semiconductor and Storage |
Description: JFET 2N-CH SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Supplier Device Package: SMV Part Status: Active Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
auf Bestellung 17640 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3075(TE12L,Q) | Toshiba Semiconductor and Storage | Description: MOSF RF N CH 30V 5A PW-X |
Produkt ist nicht verfügbar |
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2SK3078A(TE12L,F) | Toshiba Semiconductor and Storage | Description: FET RF N-CH 10V 470 MHZ PW-MINI |
Produkt ist nicht verfügbar |
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2SK3476(TE12L,Q) | Toshiba Semiconductor and Storage | Description: MOSF RF N CH 20V 3A PW-X |
Produkt ist nicht verfügbar |
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2SK3756(TE12L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH PW-MINI |
Produkt ist nicht verfügbar |
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2SK4037(TE12L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH PW-X |
auf Bestellung 404 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK880-BL(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Supplier Device Package: SC-70 Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
auf Bestellung 8451 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK880-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Supplier Device Package: USM Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
auf Bestellung 42834 Stücke: Lieferzeit 10-14 Tag (e) |
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3SK291(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF MOSFET 6V SMQ Packaging: Cut Tape (CT) Package / Case: SC-61AA Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Dual Gate Gain: 22.5dB Technology: MOSFET (Metal Oxide) Noise Figure: 2.5dB Supplier Device Package: SMQ Voltage - Rated: 12.5 V Voltage - Test: 6 V Current - Test: 10 mA |
Produkt ist nicht verfügbar |
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3SK293(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF MOSFET 6V USQ Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Dual Gate Gain: 22dB Technology: MOSFET (Metal Oxide) Noise Figure: 2.5dB Supplier Device Package: USQ Part Status: Not For New Designs Voltage - Rated: 12.5 V Voltage - Test: 6 V Current - Test: 10 mA |
auf Bestellung 34931 Stücke: Lieferzeit 10-14 Tag (e) |
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CUS521,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 26pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 30 V |
auf Bestellung 4420 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S12FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 9VWM USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Power Line Protection: No |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S6.8MFS,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM 15VC FSC |
auf Bestellung 4527 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S6.8UFS,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
auf Bestellung 1341 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3A5.6CT(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 2.5VWM CST3 |
auf Bestellung 1616 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3A5.6LFU(TE85L,F | Toshiba Semiconductor and Storage | Description: TVS DIODE 3.5VWM USM |
Produkt ist nicht verfügbar |
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DF3A6.2CT(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 3VWM CST3 |
auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3A6.2F(TE85L,F) | Toshiba Semiconductor and Storage | Description: TVS DIODE 3VWM SMINI |
auf Bestellung 4210 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3A6.2LFU(TE85L,F | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM USM |
auf Bestellung 401 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3A6.8CT(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM DST3 |
auf Bestellung 2875 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3A6.8LFV,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: VESM Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.5V Power Line Protection: No |
auf Bestellung 55025 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3D6.8MFV(TL3,T) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM 15VC VESM |
Produkt ist nicht verfügbar |
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DF5A5.6CJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 29pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.3V Power Line Protection: No Part Status: Active |
auf Bestellung 66140 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS416(TL3,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA FSC
Description: DIODE SCHOTTKY 30V 100MA FSC
Produkt ist nicht verfügbar
1SS417CT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 38377 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
77+ | 0.23 EUR |
124+ | 0.14 EUR |
500+ | 0.1 EUR |
1000+ | 0.092 EUR |
2000+ | 0.082 EUR |
5000+ | 0.07 EUR |
1SS417,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 33393 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
83+ | 0.21 EUR |
133+ | 0.13 EUR |
500+ | 0.097 EUR |
1000+ | 0.086 EUR |
2000+ | 0.076 EUR |
5000+ | 0.065 EUR |
1SS423(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 40V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 10538 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
40+ | 0.44 EUR |
100+ | 0.28 EUR |
500+ | 0.21 EUR |
1000+ | 0.19 EUR |
1SS424(TPL3,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Description: DIODE SCHOTTKY 20V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 40010 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
86+ | 0.21 EUR |
138+ | 0.13 EUR |
500+ | 0.093 EUR |
1000+ | 0.082 EUR |
2000+ | 0.073 EUR |
2SA1163-BL,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 35880 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
73+ | 0.24 EUR |
117+ | 0.15 EUR |
500+ | 0.11 EUR |
1000+ | 0.098 EUR |
2SA1312-BL(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SA1588-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
Description: TRANS PNP 30V 0.5A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 10575 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
93+ | 0.19 EUR |
150+ | 0.12 EUR |
500+ | 0.086 EUR |
1000+ | 0.076 EUR |
2SA1618-GR(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SMV
Description: TRANS 2PNP 50V 0.15A SMV
Produkt ist nicht verfügbar
2SA1832-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
80+ | 0.22 EUR |
166+ | 0.11 EUR |
500+ | 0.089 EUR |
1000+ | 0.062 EUR |
2SA1873-GR(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
Description: TRANS 2PNP 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
auf Bestellung 6676 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 0.42 EUR |
69+ | 0.26 EUR |
110+ | 0.16 EUR |
500+ | 0.12 EUR |
1000+ | 0.1 EUR |
2SA1873-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
Description: TRANS 2PNP 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
auf Bestellung 5928 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.51 EUR |
58+ | 0.31 EUR |
100+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.13 EUR |
2SA2154CT-GR,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 20138 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
73+ | 0.24 EUR |
117+ | 0.15 EUR |
500+ | 0.11 EUR |
1000+ | 0.098 EUR |
2000+ | 0.087 EUR |
5000+ | 0.075 EUR |
2SA2154CT-Y(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.1A CST3
Description: TRANS PNP 50V 0.1A CST3
Produkt ist nicht verfügbar
2SA2154MFV-GR(TPL3 |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC2714-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Description: RF TRANS NPN 30V 550MHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
auf Bestellung 7911 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
37+ | 0.48 EUR |
100+ | 0.24 EUR |
500+ | 0.2 EUR |
1000+ | 0.15 EUR |
2SC2859-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Description: TRANS NPN 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC3138-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 0.05A TO236
Description: TRANS NPN 200V 0.05A TO236
Produkt ist nicht verfügbar
2SC3265-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 25V 0.8A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
Description: TRANS NPN 25V 0.8A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
auf Bestellung 2442 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
37+ | 0.48 EUR |
100+ | 0.24 EUR |
500+ | 0.2 EUR |
1000+ | 0.15 EUR |
2SC3324-BL(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS NPN 120V 0.1A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC3326-A,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
Description: TRANS NPN 20V 0.3A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 72751 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.55 EUR |
55+ | 0.33 EUR |
100+ | 0.2 EUR |
500+ | 0.15 EUR |
1000+ | 0.13 EUR |
2SC4207-GR(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 25153 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 0.49 EUR |
59+ | 0.3 EUR |
100+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.12 EUR |
2SC4207-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
auf Bestellung 38623 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 0.49 EUR |
59+ | 0.3 EUR |
100+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.12 EUR |
2SC4215-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 17dB ~ 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Supplier Device Package: SC-70
Part Status: Active
Description: RF TRANS NPN 30V 550MHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 17dB ~ 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Supplier Device Package: SC-70
Part Status: Active
auf Bestellung 1479 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
32+ | 0.56 EUR |
100+ | 0.28 EUR |
500+ | 0.25 EUR |
1000+ | 0.19 EUR |
2SC4738-BL(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
2SC4738-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 14089 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.28 EUR |
102+ | 0.17 EUR |
164+ | 0.11 EUR |
500+ | 0.078 EUR |
1000+ | 0.069 EUR |
2SC4944-GR(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 10131 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
80+ | 0.22 EUR |
127+ | 0.14 EUR |
500+ | 0.1 EUR |
1000+ | 0.091 EUR |
2SC4944-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A USV
Description: TRANS 2NPN 50V 0.15A USV
auf Bestellung 587 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
39+ | 0.46 EUR |
100+ | 0.26 EUR |
500+ | 0.17 EUR |
2SC5065-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Active
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Active
auf Bestellung 4819 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
32+ | 0.56 EUR |
100+ | 0.34 EUR |
500+ | 0.31 EUR |
1000+ | 0.21 EUR |
2SC5084-O(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Description: RF TRANS NPN 12V 7GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC5085-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC5095-O(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC5095-R(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC6026CT-Y(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
Description: TRANS NPN 50V 0.1A CST3
auf Bestellung 2124 Stücke:
Lieferzeit 10-14 Tag (e)2SK209-BL(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 42276 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.07 EUR |
27+ | 0.66 EUR |
100+ | 0.43 EUR |
500+ | 0.32 EUR |
1000+ | 0.29 EUR |
2SK209-GR(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 9472 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.13 EUR |
26+ | 0.7 EUR |
100+ | 0.45 EUR |
500+ | 0.34 EUR |
1000+ | 0.31 EUR |
2SK209-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 23715 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.13 EUR |
26+ | 0.7 EUR |
100+ | 0.45 EUR |
500+ | 0.34 EUR |
1000+ | 0.31 EUR |
2SK2145-BL(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: JFET 2N-CH SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Supplier Device Package: SMV
Part Status: Active
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Description: JFET 2N-CH SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Supplier Device Package: SMV
Part Status: Active
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 17640 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.64 EUR |
18+ | 1.02 EUR |
100+ | 0.67 EUR |
500+ | 0.51 EUR |
1000+ | 0.47 EUR |
2SK3075(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 30V 5A PW-X
Description: MOSF RF N CH 30V 5A PW-X
Produkt ist nicht verfügbar
2SK3078A(TE12L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: FET RF N-CH 10V 470 MHZ PW-MINI
Description: FET RF N-CH 10V 470 MHZ PW-MINI
Produkt ist nicht verfügbar
2SK3476(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 20V 3A PW-X
Description: MOSF RF N CH 20V 3A PW-X
Produkt ist nicht verfügbar
2SK3756(TE12L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PW-MINI
Description: MOSFET N-CH PW-MINI
Produkt ist nicht verfügbar
2SK4037(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PW-X
Description: MOSFET N-CH PW-X
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)2SK880-BL(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Description: JFET N-CH 50V SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 8451 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.92 EUR |
23+ | 0.78 EUR |
100+ | 0.54 EUR |
500+ | 0.42 EUR |
1000+ | 0.34 EUR |
2SK880-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 50V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 42834 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.99 EUR |
21+ | 0.84 EUR |
100+ | 0.63 EUR |
500+ | 0.5 EUR |
3SK291(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: SMQ
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Description: RF MOSFET 6V SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: SMQ
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
3SK293(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: USQ
Part Status: Not For New Designs
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Description: RF MOSFET 6V USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: USQ
Part Status: Not For New Designs
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
auf Bestellung 34931 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.14 EUR |
25+ | 0.7 EUR |
100+ | 0.45 EUR |
500+ | 0.35 EUR |
1000+ | 0.31 EUR |
CUS521,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 4420 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 0.3 EUR |
100+ | 0.18 EUR |
160+ | 0.11 EUR |
500+ | 0.08 EUR |
1000+ | 0.071 EUR |
DF2S12FU,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Power Line Protection: No
Description: TVS DIODE 9VWM USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.28 EUR |
87+ | 0.2 EUR |
163+ | 0.11 EUR |
500+ | 0.085 EUR |
1000+ | 0.059 EUR |
DF2S6.8MFS,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 15VC FSC
Description: TVS DIODE 5VWM 15VC FSC
auf Bestellung 4527 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
27+ | 0.66 EUR |
100+ | 0.45 EUR |
500+ | 0.34 EUR |
1000+ | 0.25 EUR |
2000+ | 0.23 EUR |
DF2S6.8UFS,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
auf Bestellung 1341 Stücke:
Lieferzeit 10-14 Tag (e)DF3A5.6CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM CST3
Description: TVS DIODE 2.5VWM CST3
auf Bestellung 1616 Stücke:
Lieferzeit 10-14 Tag (e)DF3A5.6LFU(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USM
Description: TVS DIODE 3.5VWM USM
Produkt ist nicht verfügbar
DF3A6.2CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM CST3
Description: TVS DIODE 3VWM CST3
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)DF3A6.2F(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMINI
Description: TVS DIODE 3VWM SMINI
auf Bestellung 4210 Stücke:
Lieferzeit 10-14 Tag (e)DF3A6.2LFU(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
Description: TVS DIODE 5VWM USM
auf Bestellung 401 Stücke:
Lieferzeit 10-14 Tag (e)DF3A6.8CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM DST3
Description: TVS DIODE 5VWM DST3
auf Bestellung 2875 Stücke:
Lieferzeit 10-14 Tag (e)DF3A6.8LFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
Description: TVS DIODE 5VWM VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 55025 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
87+ | 0.2 EUR |
140+ | 0.13 EUR |
500+ | 0.092 EUR |
1000+ | 0.081 EUR |
2000+ | 0.072 EUR |
DF3D6.8MFV(TL3,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 15VC VESM
Description: TVS DIODE 5VWM 15VC VESM
Produkt ist nicht verfügbar
DF5A5.6CJE,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 66140 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 0.4 EUR |
70+ | 0.25 EUR |
113+ | 0.16 EUR |
500+ | 0.11 EUR |
1000+ | 0.1 EUR |
2000+ | 0.09 EUR |