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1SS416(TL3,T) 1SS416(TL3,T) Toshiba Semiconductor and Storage 1SS416_en_datasheet_071101.pdf Description: DIODE SCHOTTKY 30V 100MA FSC
Produkt ist nicht verfügbar
1SS417CT,L3F 1SS417CT,L3F Toshiba Semiconductor and Storage 1SS417CT_datasheet_en_20140301.pdf?did=22155&prodName=1SS417CT Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 38377 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
77+ 0.23 EUR
124+ 0.14 EUR
500+ 0.1 EUR
1000+ 0.092 EUR
2000+ 0.082 EUR
5000+ 0.07 EUR
Mindestbestellmenge: 46
1SS417,L3M 1SS417,L3M Toshiba Semiconductor and Storage 1SS417_datasheet_en_20140708.pdf?did=345&prodName=1SS417 Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 33393 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
83+ 0.21 EUR
133+ 0.13 EUR
500+ 0.097 EUR
1000+ 0.086 EUR
2000+ 0.076 EUR
5000+ 0.065 EUR
Mindestbestellmenge: 50
1SS423(TE85L,F) 1SS423(TE85L,F) Toshiba Semiconductor and Storage 1SS423_datasheet_en_20220720.pdf?did=4401&prodName=1SS423 Description: DIODE ARR SCHOTT 40V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 10538 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
40+ 0.44 EUR
100+ 0.28 EUR
500+ 0.21 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 25
1SS424(TPL3,F) 1SS424(TPL3,F) Toshiba Semiconductor and Storage 1SS424_datasheet_en_20140301.pdf?did=4402&prodName=1SS424 Description: DIODE SCHOTTKY 20V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 40010 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
86+ 0.21 EUR
138+ 0.13 EUR
500+ 0.093 EUR
1000+ 0.082 EUR
2000+ 0.073 EUR
Mindestbestellmenge: 53
2SA1163-BL,LF 2SA1163-BL,LF Toshiba Semiconductor and Storage 2SA1163_datasheet_en_20220302.pdf?did=19353&prodName=2SA1163 Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 35880 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
73+ 0.24 EUR
117+ 0.15 EUR
500+ 0.11 EUR
1000+ 0.098 EUR
Mindestbestellmenge: 46
2SA1312-BL(TE85L,F 2SA1312-BL(TE85L,F Toshiba Semiconductor and Storage Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SA1588-Y,LF 2SA1588-Y,LF Toshiba Semiconductor and Storage 2SA1588_datasheet_en_20210625.pdf?did=19174&prodName=2SA1588 Description: TRANS PNP 30V 0.5A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 10575 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
93+ 0.19 EUR
150+ 0.12 EUR
500+ 0.086 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 56
2SA1618-GR(TE85L,F 2SA1618-GR(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=19176&prodName=2SA1618 Description: TRANS 2PNP 50V 0.15A SMV
Produkt ist nicht verfügbar
2SA1832-GR,LF 2SA1832-GR,LF Toshiba Semiconductor and Storage 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
80+ 0.22 EUR
166+ 0.11 EUR
500+ 0.089 EUR
1000+ 0.062 EUR
Mindestbestellmenge: 56
2SA1873-GR(TE85L,F 2SA1873-GR(TE85L,F Toshiba Semiconductor and Storage 2SA1873-%28G%2CY%29.pdf Description: TRANS 2PNP 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
auf Bestellung 6676 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
69+ 0.26 EUR
110+ 0.16 EUR
500+ 0.12 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 42
2SA1873-Y(TE85L,F) 2SA1873-Y(TE85L,F) Toshiba Semiconductor and Storage 2SA1873-%28G%2CY%29.pdf Description: TRANS 2PNP 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
auf Bestellung 5928 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
58+ 0.31 EUR
100+ 0.19 EUR
500+ 0.14 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 35
2SA2154CT-GR,L3F 2SA2154CT-GR,L3F Toshiba Semiconductor and Storage docget.jsp?did=711&prodName=2SA2154CT Description: TRANS PNP 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 20138 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
73+ 0.24 EUR
117+ 0.15 EUR
500+ 0.11 EUR
1000+ 0.098 EUR
2000+ 0.087 EUR
5000+ 0.075 EUR
Mindestbestellmenge: 46
2SA2154CT-Y(TPL3) 2SA2154CT-Y(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=711&prodName=2SA2154CT Description: TRANS PNP 50V 0.1A CST3
Produkt ist nicht verfügbar
2SA2154MFV-GR(TPL3 2SA2154MFV-GR(TPL3 Toshiba Semiconductor and Storage docget.jsp?did=6105&prodName=2SA2154MFV Description: TRANS PNP 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC2714-Y(TE85L,F) 2SC2714-Y(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 30V 550MHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
auf Bestellung 7911 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
2SC2859-Y(TE85L,F) 2SC2859-Y(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS NPN 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC3138-Y(TE85L,F) 2SC3138-Y(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS NPN 200V 0.05A TO236
Produkt ist nicht verfügbar
2SC3265-Y,LF 2SC3265-Y,LF Toshiba Semiconductor and Storage 2SC3265_datasheet_en_20140301.pdf?did=19281&prodName=2SC3265 Description: TRANS NPN 25V 0.8A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
auf Bestellung 2442 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
2SC3324-BL(TE85L,F 2SC3324-BL(TE85L,F Toshiba Semiconductor and Storage 2SC3324.pdf Description: TRANS NPN 120V 0.1A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC3326-A,LF 2SC3326-A,LF Toshiba Semiconductor and Storage 2SC3326_datasheet_en_20210625.pdf?did=19249&prodName=2SC3326 Description: TRANS NPN 20V 0.3A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 72751 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
55+ 0.33 EUR
100+ 0.2 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 33
2SC4207-GR(TE85L,F 2SC4207-GR(TE85L,F Toshiba Semiconductor and Storage 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207 Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 25153 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
59+ 0.3 EUR
100+ 0.19 EUR
500+ 0.14 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 36
2SC4207-Y(TE85L,F) 2SC4207-Y(TE85L,F) Toshiba Semiconductor and Storage 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207 Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
auf Bestellung 38623 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
59+ 0.3 EUR
100+ 0.19 EUR
500+ 0.14 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 36
2SC4215-Y(TE85L,F) 2SC4215-Y(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 30V 550MHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 17dB ~ 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Supplier Device Package: SC-70
Part Status: Active
auf Bestellung 1479 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
32+ 0.56 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 23
2SC4738-BL(TE85L,F 2SC4738-BL(TE85L,F Toshiba Semiconductor and Storage 2SC4738_datasheet_en_20210629.pdf?did=19314&prodName=2SC4738 Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
2SC4738-Y,LF 2SC4738-Y,LF Toshiba Semiconductor and Storage 2SC4738_datasheet_en_20210629.pdf?did=19314&prodName=2SC4738 Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 14089 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
102+ 0.17 EUR
164+ 0.11 EUR
500+ 0.078 EUR
1000+ 0.069 EUR
Mindestbestellmenge: 63
2SC4944-GR(TE85L,F 2SC4944-GR(TE85L,F Toshiba Semiconductor and Storage 2SC4944_datasheet_en_20210625.pdf?did=19320&prodName=2SC4944 Description: TRANS NPN 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 10131 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
80+ 0.22 EUR
127+ 0.14 EUR
500+ 0.1 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 50
2SC4944-Y(TE85L,F) 2SC4944-Y(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19320&prodName=2SC4944 Description: TRANS 2NPN 50V 0.15A USV
auf Bestellung 587 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
39+ 0.46 EUR
100+ 0.26 EUR
500+ 0.17 EUR
Mindestbestellmenge: 29
2SC5065-Y(TE85L,F) 2SC5065-Y(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Active
auf Bestellung 4819 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
32+ 0.56 EUR
100+ 0.34 EUR
500+ 0.31 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 25
2SC5084-O(TE85L,F) 2SC5084-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC5085-Y(TE85L,F) 2SC5085-Y(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC5095-O(TE85L,F) 2SC5095-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC5095-R(TE85L,F) 2SC5095-R(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC6026CT-Y(TPL3) 2SC6026CT-Y(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=713&prodName=2SC6026CT Description: TRANS NPN 50V 0.1A CST3
auf Bestellung 2124 Stücke:
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2SK209-BL(TE85L,F) 2SK209-BL(TE85L,F) Toshiba Semiconductor and Storage 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209 Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 42276 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
27+ 0.66 EUR
100+ 0.43 EUR
500+ 0.32 EUR
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Mindestbestellmenge: 17
2SK209-GR(TE85L,F) 2SK209-GR(TE85L,F) Toshiba Semiconductor and Storage 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209 Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 9472 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
26+ 0.7 EUR
100+ 0.45 EUR
500+ 0.34 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 16
2SK209-Y(TE85L,F) 2SK209-Y(TE85L,F) Toshiba Semiconductor and Storage 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209 Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 23715 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
26+ 0.7 EUR
100+ 0.45 EUR
500+ 0.34 EUR
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2SK2145-BL(TE85L,F 2SK2145-BL(TE85L,F Toshiba Semiconductor and Storage 2SK2145_datasheet_en_20140301.pdf?did=19704&prodName=2SK2145 Description: JFET 2N-CH SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Supplier Device Package: SMV
Part Status: Active
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 17640 Stücke:
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11+1.64 EUR
18+ 1.02 EUR
100+ 0.67 EUR
500+ 0.51 EUR
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2SK3075(TE12L,Q) 2SK3075(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=17990&prodName=2SK3075 Description: MOSF RF N CH 30V 5A PW-X
Produkt ist nicht verfügbar
2SK3078A(TE12L,F) 2SK3078A(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=17921&prodName=2SK3078A Description: FET RF N-CH 10V 470 MHZ PW-MINI
Produkt ist nicht verfügbar
2SK3476(TE12L,Q) 2SK3476(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=17928&prodName=2SK3476 Description: MOSF RF N CH 20V 3A PW-X
Produkt ist nicht verfügbar
2SK3756(TE12L,F) 2SK3756(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=21363&prodName=2SK3756 Description: MOSFET N-CH PW-MINI
Produkt ist nicht verfügbar
2SK4037(TE12L,Q) 2SK4037(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=10418&prodName=2SK4037 Description: MOSFET N-CH PW-X
auf Bestellung 404 Stücke:
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2SK880-BL(TE85L,F) 2SK880-BL(TE85L,F) Toshiba Semiconductor and Storage 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880 Description: JFET N-CH 50V SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 8451 Stücke:
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20+0.92 EUR
23+ 0.78 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
2SK880-Y(TE85L,F) 2SK880-Y(TE85L,F) Toshiba Semiconductor and Storage 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880 Description: JFET N-CH 50V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 42834 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
21+ 0.84 EUR
100+ 0.63 EUR
500+ 0.5 EUR
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3SK291(TE85L,F) 3SK291(TE85L,F) Toshiba Semiconductor and Storage Description: RF MOSFET 6V SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: SMQ
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
3SK293(TE85L,F) 3SK293(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=17968&prodName=3SK293 Description: RF MOSFET 6V USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: USQ
Part Status: Not For New Designs
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
auf Bestellung 34931 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
25+ 0.7 EUR
100+ 0.45 EUR
500+ 0.35 EUR
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CUS521,H3F CUS521,H3F Toshiba Semiconductor and Storage docget.jsp?did=8859&prodName=CUS521 Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 4420 Stücke:
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59+0.3 EUR
100+ 0.18 EUR
160+ 0.11 EUR
500+ 0.08 EUR
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DF2S12FU,H3F DF2S12FU,H3F Toshiba Semiconductor and Storage DF2S12FU_datasheet_en_20140301.pdf?did=3402&prodName=DF2S12FU Description: TVS DIODE 9VWM USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
DF2S6.8MFS,L3F DF2S6.8MFS,L3F Toshiba Semiconductor and Storage DF2S6.8MFS.pdf Description: TVS DIODE 5VWM 15VC FSC
auf Bestellung 4527 Stücke:
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22+0.81 EUR
27+ 0.66 EUR
100+ 0.45 EUR
500+ 0.34 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
Mindestbestellmenge: 22
DF2S6.8UFS,L3F DF2S6.8UFS,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS Description: TVS DIODE 19VWM 22VC
auf Bestellung 1341 Stücke:
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DF3A5.6CT(TPL3) DF3A5.6CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A5.6CT Description: TVS DIODE 2.5VWM CST3
auf Bestellung 1616 Stücke:
Lieferzeit 10-14 Tag (e)
DF3A5.6LFU(TE85L,F DF3A5.6LFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A5.6LFU Description: TVS DIODE 3.5VWM USM
Produkt ist nicht verfügbar
DF3A6.2CT(TPL3) DF3A6.2CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.2CT Description: TVS DIODE 3VWM CST3
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
DF3A6.2F(TE85L,F) DF3A6.2F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.2F Description: TVS DIODE 3VWM SMINI
auf Bestellung 4210 Stücke:
Lieferzeit 10-14 Tag (e)
DF3A6.2LFU(TE85L,F DF3A6.2LFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.2LFU Description: TVS DIODE 5VWM USM
auf Bestellung 401 Stücke:
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DF3A6.8CT(TPL3) DF3A6.8CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.8CT Description: TVS DIODE 5VWM DST3
auf Bestellung 2875 Stücke:
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DF3A6.8LFV,L3F DF3A6.8LFV,L3F Toshiba Semiconductor and Storage DF3A6.8LFV_datasheet_en_20140301.pdf?did=6014&prodName=DF3A6.8LFV Description: TVS DIODE 5VWM VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 55025 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
87+ 0.2 EUR
140+ 0.13 EUR
500+ 0.092 EUR
1000+ 0.081 EUR
2000+ 0.072 EUR
Mindestbestellmenge: 53
DF3D6.8MFV(TL3,T) DF3D6.8MFV(TL3,T) Toshiba Semiconductor and Storage DF3D6.8MFV.pdf Description: TVS DIODE 5VWM 15VC VESM
Produkt ist nicht verfügbar
DF5A5.6CJE,LM DF5A5.6CJE,LM Toshiba Semiconductor and Storage DF5A5.6CJE_datasheet_en_20140301.pdf?did=351&prodName=DF5A5.6CJE Description: TVS DIODE 3.5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 66140 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
70+ 0.25 EUR
113+ 0.16 EUR
500+ 0.11 EUR
1000+ 0.1 EUR
2000+ 0.09 EUR
Mindestbestellmenge: 44
1SS416(TL3,T) 1SS416_en_datasheet_071101.pdf
1SS416(TL3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA FSC
Produkt ist nicht verfügbar
1SS417CT,L3F 1SS417CT_datasheet_en_20140301.pdf?did=22155&prodName=1SS417CT
1SS417CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 38377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
77+ 0.23 EUR
124+ 0.14 EUR
500+ 0.1 EUR
1000+ 0.092 EUR
2000+ 0.082 EUR
5000+ 0.07 EUR
Mindestbestellmenge: 46
1SS417,L3M 1SS417_datasheet_en_20140708.pdf?did=345&prodName=1SS417
1SS417,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 33393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
83+ 0.21 EUR
133+ 0.13 EUR
500+ 0.097 EUR
1000+ 0.086 EUR
2000+ 0.076 EUR
5000+ 0.065 EUR
Mindestbestellmenge: 50
1SS423(TE85L,F) 1SS423_datasheet_en_20220720.pdf?did=4401&prodName=1SS423
1SS423(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 40V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 10538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
40+ 0.44 EUR
100+ 0.28 EUR
500+ 0.21 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 25
1SS424(TPL3,F) 1SS424_datasheet_en_20140301.pdf?did=4402&prodName=1SS424
1SS424(TPL3,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 40010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
86+ 0.21 EUR
138+ 0.13 EUR
500+ 0.093 EUR
1000+ 0.082 EUR
2000+ 0.073 EUR
Mindestbestellmenge: 53
2SA1163-BL,LF 2SA1163_datasheet_en_20220302.pdf?did=19353&prodName=2SA1163
2SA1163-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 35880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
73+ 0.24 EUR
117+ 0.15 EUR
500+ 0.11 EUR
1000+ 0.098 EUR
Mindestbestellmenge: 46
2SA1312-BL(TE85L,F
2SA1312-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SA1588-Y,LF 2SA1588_datasheet_en_20210625.pdf?did=19174&prodName=2SA1588
2SA1588-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 10575 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
93+ 0.19 EUR
150+ 0.12 EUR
500+ 0.086 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 56
2SA1618-GR(TE85L,F docget.jsp?did=19176&prodName=2SA1618
2SA1618-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SMV
Produkt ist nicht verfügbar
2SA1832-GR,LF 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832
2SA1832-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
80+ 0.22 EUR
166+ 0.11 EUR
500+ 0.089 EUR
1000+ 0.062 EUR
Mindestbestellmenge: 56
2SA1873-GR(TE85L,F 2SA1873-%28G%2CY%29.pdf
2SA1873-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
auf Bestellung 6676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
69+ 0.26 EUR
110+ 0.16 EUR
500+ 0.12 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 42
2SA1873-Y(TE85L,F) 2SA1873-%28G%2CY%29.pdf
2SA1873-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
auf Bestellung 5928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
58+ 0.31 EUR
100+ 0.19 EUR
500+ 0.14 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 35
2SA2154CT-GR,L3F docget.jsp?did=711&prodName=2SA2154CT
2SA2154CT-GR,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 20138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
73+ 0.24 EUR
117+ 0.15 EUR
500+ 0.11 EUR
1000+ 0.098 EUR
2000+ 0.087 EUR
5000+ 0.075 EUR
Mindestbestellmenge: 46
2SA2154CT-Y(TPL3) docget.jsp?did=711&prodName=2SA2154CT
2SA2154CT-Y(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.1A CST3
Produkt ist nicht verfügbar
2SA2154MFV-GR(TPL3 docget.jsp?did=6105&prodName=2SA2154MFV
2SA2154MFV-GR(TPL3
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC2714-Y(TE85L,F)
2SC2714-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
auf Bestellung 7911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
2SC2859-Y(TE85L,F)
2SC2859-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC3138-Y(TE85L,F)
2SC3138-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 0.05A TO236
Produkt ist nicht verfügbar
2SC3265-Y,LF 2SC3265_datasheet_en_20140301.pdf?did=19281&prodName=2SC3265
2SC3265-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 25V 0.8A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
auf Bestellung 2442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
2SC3324-BL(TE85L,F 2SC3324.pdf
2SC3324-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC3326-A,LF 2SC3326_datasheet_en_20210625.pdf?did=19249&prodName=2SC3326
2SC3326-A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 72751 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
55+ 0.33 EUR
100+ 0.2 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 33
2SC4207-GR(TE85L,F 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207
2SC4207-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 25153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
59+ 0.3 EUR
100+ 0.19 EUR
500+ 0.14 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 36
2SC4207-Y(TE85L,F) 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207
2SC4207-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
auf Bestellung 38623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
59+ 0.3 EUR
100+ 0.19 EUR
500+ 0.14 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 36
2SC4215-Y(TE85L,F)
2SC4215-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 17dB ~ 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Supplier Device Package: SC-70
Part Status: Active
auf Bestellung 1479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
32+ 0.56 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 23
2SC4738-BL(TE85L,F 2SC4738_datasheet_en_20210629.pdf?did=19314&prodName=2SC4738
2SC4738-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
2SC4738-Y,LF 2SC4738_datasheet_en_20210629.pdf?did=19314&prodName=2SC4738
2SC4738-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 14089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
102+ 0.17 EUR
164+ 0.11 EUR
500+ 0.078 EUR
1000+ 0.069 EUR
Mindestbestellmenge: 63
2SC4944-GR(TE85L,F 2SC4944_datasheet_en_20210625.pdf?did=19320&prodName=2SC4944
2SC4944-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 10131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
80+ 0.22 EUR
127+ 0.14 EUR
500+ 0.1 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 50
2SC4944-Y(TE85L,F) docget.jsp?did=19320&prodName=2SC4944
2SC4944-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A USV
auf Bestellung 587 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
39+ 0.46 EUR
100+ 0.26 EUR
500+ 0.17 EUR
Mindestbestellmenge: 29
2SC5065-Y(TE85L,F)
2SC5065-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Active
auf Bestellung 4819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
32+ 0.56 EUR
100+ 0.34 EUR
500+ 0.31 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 25
2SC5084-O(TE85L,F)
2SC5084-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC5085-Y(TE85L,F)
2SC5085-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC5095-O(TE85L,F)
2SC5095-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC5095-R(TE85L,F)
2SC5095-R(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
2SC6026CT-Y(TPL3) docget.jsp?did=713&prodName=2SC6026CT
2SC6026CT-Y(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
auf Bestellung 2124 Stücke:
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2SK209-BL(TE85L,F) 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209
2SK209-BL(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 42276 Stücke:
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Anzahl Preis ohne MwSt
17+1.07 EUR
27+ 0.66 EUR
100+ 0.43 EUR
500+ 0.32 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 17
2SK209-GR(TE85L,F) 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209
2SK209-GR(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 9472 Stücke:
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Anzahl Preis ohne MwSt
16+1.13 EUR
26+ 0.7 EUR
100+ 0.45 EUR
500+ 0.34 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 16
2SK209-Y(TE85L,F) 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209
2SK209-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 23715 Stücke:
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Anzahl Preis ohne MwSt
16+1.13 EUR
26+ 0.7 EUR
100+ 0.45 EUR
500+ 0.34 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 16
2SK2145-BL(TE85L,F 2SK2145_datasheet_en_20140301.pdf?did=19704&prodName=2SK2145
2SK2145-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: JFET 2N-CH SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Supplier Device Package: SMV
Part Status: Active
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 17640 Stücke:
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Anzahl Preis ohne MwSt
11+1.64 EUR
18+ 1.02 EUR
100+ 0.67 EUR
500+ 0.51 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 11
2SK3075(TE12L,Q) docget.jsp?did=17990&prodName=2SK3075
2SK3075(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 30V 5A PW-X
Produkt ist nicht verfügbar
2SK3078A(TE12L,F) docget.jsp?did=17921&prodName=2SK3078A
2SK3078A(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: FET RF N-CH 10V 470 MHZ PW-MINI
Produkt ist nicht verfügbar
2SK3476(TE12L,Q) docget.jsp?did=17928&prodName=2SK3476
2SK3476(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 20V 3A PW-X
Produkt ist nicht verfügbar
2SK3756(TE12L,F) docget.jsp?did=21363&prodName=2SK3756
2SK3756(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PW-MINI
Produkt ist nicht verfügbar
2SK4037(TE12L,Q) docget.jsp?did=10418&prodName=2SK4037
2SK4037(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PW-X
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
2SK880-BL(TE85L,F) 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880
2SK880-BL(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 8451 Stücke:
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Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.78 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
2SK880-Y(TE85L,F) 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880
2SK880-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 42834 Stücke:
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Anzahl Preis ohne MwSt
18+0.99 EUR
21+ 0.84 EUR
100+ 0.63 EUR
500+ 0.5 EUR
Mindestbestellmenge: 18
3SK291(TE85L,F)
3SK291(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: SMQ
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
3SK293(TE85L,F) docget.jsp?did=17968&prodName=3SK293
3SK293(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: USQ
Part Status: Not For New Designs
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
auf Bestellung 34931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.14 EUR
25+ 0.7 EUR
100+ 0.45 EUR
500+ 0.35 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 16
CUS521,H3F docget.jsp?did=8859&prodName=CUS521
CUS521,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 4420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
59+0.3 EUR
100+ 0.18 EUR
160+ 0.11 EUR
500+ 0.08 EUR
1000+ 0.071 EUR
Mindestbestellmenge: 59
DF2S12FU,H3F DF2S12FU_datasheet_en_20140301.pdf?did=3402&prodName=DF2S12FU
DF2S12FU,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
DF2S6.8MFS,L3F DF2S6.8MFS.pdf
DF2S6.8MFS,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 15VC FSC
auf Bestellung 4527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
27+ 0.66 EUR
100+ 0.45 EUR
500+ 0.34 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
Mindestbestellmenge: 22
DF2S6.8UFS,L3F docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS
DF2S6.8UFS,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 1341 Stücke:
Lieferzeit 10-14 Tag (e)
DF3A5.6CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF3A5.6CT
DF3A5.6CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM CST3
auf Bestellung 1616 Stücke:
Lieferzeit 10-14 Tag (e)
DF3A5.6LFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF3A5.6LFU
DF3A5.6LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USM
Produkt ist nicht verfügbar
DF3A6.2CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF3A6.2CT
DF3A6.2CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM CST3
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
DF3A6.2F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF3A6.2F
DF3A6.2F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMINI
auf Bestellung 4210 Stücke:
Lieferzeit 10-14 Tag (e)
DF3A6.2LFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF3A6.2LFU
DF3A6.2LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
auf Bestellung 401 Stücke:
Lieferzeit 10-14 Tag (e)
DF3A6.8CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF3A6.8CT
DF3A6.8CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM DST3
auf Bestellung 2875 Stücke:
Lieferzeit 10-14 Tag (e)
DF3A6.8LFV,L3F DF3A6.8LFV_datasheet_en_20140301.pdf?did=6014&prodName=DF3A6.8LFV
DF3A6.8LFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 55025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
87+ 0.2 EUR
140+ 0.13 EUR
500+ 0.092 EUR
1000+ 0.081 EUR
2000+ 0.072 EUR
Mindestbestellmenge: 53
DF3D6.8MFV(TL3,T) DF3D6.8MFV.pdf
DF3D6.8MFV(TL3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 15VC VESM
Produkt ist nicht verfügbar
DF5A5.6CJE,LM DF5A5.6CJE_datasheet_en_20140301.pdf?did=351&prodName=DF5A5.6CJE
DF5A5.6CJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 66140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
70+ 0.25 EUR
113+ 0.16 EUR
500+ 0.11 EUR
1000+ 0.1 EUR
2000+ 0.09 EUR
Mindestbestellmenge: 44
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