Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Seite 53 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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RN1309(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W USM |
auf Bestellung 1995 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1312(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.15W USM |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1313(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.15W USM |
auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1314(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W USM |
Produkt ist nicht verfügbar |
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RN1316,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W USM |
auf Bestellung 618 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1317(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W USM |
Produkt ist nicht verfügbar |
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RN1318(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W USM |
auf Bestellung 2835 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1904(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN US6 |
Produkt ist nicht verfügbar |
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RN1906(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN1961FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
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RN2311(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.1W USM |
auf Bestellung 2650 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2312(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.1W USM |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2313(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.1W USM |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2314(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.1W USM |
auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2316(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.1W USM |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2318(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.1W USM |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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RN4906(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN4981,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 7895 Stücke: Lieferzeit 21-28 Tag (e) |
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RN4983(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN PNP 50V 100MA US6 |
Produkt ist nicht verfügbar |
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RN4984(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN4986(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 2730 Stücke: Lieferzeit 21-28 Tag (e) |
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RN4988(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN4989(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN4990(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3J15CT(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 30V 0.1A CST3 |
auf Bestellung 885 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3J16CT(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 0.1A CST3 |
auf Bestellung 9153 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3J36MFV,L3F | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 0.33A VESM |
auf Bestellung 9353 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3K01T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 3.2A TSM |
Produkt ist nicht verfügbar |
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SSM3K16CT(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 0.1A CST3 S-MOS |
Produkt ist nicht verfügbar |
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SSM3K301T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 3.5A TSM |
auf Bestellung 11 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3K309T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 4.7A TSM |
Produkt ist nicht verfügbar |
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SSM3K310T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 5A S-MOS |
auf Bestellung 4791 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3K318T,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 2.5A TSM |
Produkt ist nicht verfügbar |
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SSM6L11TU(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N/P-CH 20V 0.5A UF6 S |
Produkt ist nicht verfügbar |
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SSM6L16FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N/P-CH 20V 0.1A ES6 |
auf Bestellung 3829 Stücke: Lieferzeit 21-28 Tag (e) |
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TAR5SB18(TE85L,F) | Toshiba Semiconductor and Storage | Description: IC REG LDO 1.8V 0.2A SMV |
Produkt ist nicht verfügbar |
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TC4SU11F(T5L,F,T) | Toshiba Semiconductor and Storage | Description: IC GATE NAND 1CH 2-INP SMV |
Produkt ist nicht verfügbar |
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TC74HC4051AFT(EL,M | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX 8X1 16TSSOP |
Produkt ist nicht verfügbar |
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TC74VHC27FT(ELK,M) | Toshiba Semiconductor and Storage | Description: IC GATE NOR 3CH 3-INP 14-TSSOP |
Produkt ist nicht verfügbar |
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TC7SET08F,LJ | Toshiba Semiconductor and Storage | Description: IC GATE AND 1CH 2-INP SMV |
Produkt ist nicht verfügbar |
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TC7SH02F,LJ | Toshiba Semiconductor and Storage | Description: IC GATE NOR 1CH 2-INP SMV |
Produkt ist nicht verfügbar |
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TC7SH32F,LJ | Toshiba Semiconductor and Storage | Description: IC GATE OR 1CH 2-INP SMV |
Produkt ist nicht verfügbar |
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TC7SH34FS(TPL3) | Toshiba Semiconductor and Storage | Description: IC GATE L-MOS FSV |
auf Bestellung 12469 Stücke: Lieferzeit 21-28 Tag (e) |
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TC7W02FK(TE85L,F) | Toshiba Semiconductor and Storage | Description: IC GATE NOR 2CH 2-INP US8 |
Produkt ist nicht verfügbar |
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1SS190TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS272TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC61B Packaging: Tape & Reel (TR) Package / Case: SC-61AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-61B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS302TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
Produkt ist nicht verfügbar |
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1SS306TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 200V 100MA SC61B Packaging: Tape & Reel (TR) Package / Case: SC-61AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-61B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS360(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SSM Operating Temperature - Junction: 125°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
Produkt ist nicht verfügbar |
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1SS362TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: SSM Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 75000 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS367,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS370TE85LF | Toshiba Semiconductor and Storage | Description: DIODE GEN PURP 200V 100MA SC70 |
Produkt ist nicht verfügbar |
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1SS379,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 10 nA @ 80 V |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS382TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA USQ Packaging: Tape & Reel (TR) Package / Case: SC-82 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS384TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 10V 100MA USQ Packaging: Tape & Reel (TR) Package / Case: SC-82 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: USQ Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS394TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS397TE85LF | Toshiba Semiconductor and Storage | Description: DIODE GEN PURP 400V 100MA SC70 |
Produkt ist nicht verfügbar |
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1SS402TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTT 20V 50MA USQ Packaging: Tape & Reel (TR) Package / Case: SC-82 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50mA Supplier Device Package: USQ Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS404,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 300MA USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 46pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA Current - Reverse Leakage @ Vr: 50 µA @ 20 V |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1312GRTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
RN1309(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 1995 Stücke:
Lieferzeit 21-28 Tag (e)RN1312(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W USM
Description: TRANS PREBIAS NPN 0.15W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN1313(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W USM
Description: TRANS PREBIAS NPN 0.15W USM
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)RN1314(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Description: TRANS PREBIAS NPN 0.1W USM
Produkt ist nicht verfügbar
RN1316,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 618 Stücke:
Lieferzeit 21-28 Tag (e)RN1317(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Description: TRANS PREBIAS NPN 0.1W USM
Produkt ist nicht verfügbar
RN1318(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 2835 Stücke:
Lieferzeit 21-28 Tag (e)RN1904(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN US6
Description: TRANSISTOR NPN US6
Produkt ist nicht verfügbar
RN1906(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN1961FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN2311(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 2650 Stücke:
Lieferzeit 21-28 Tag (e)RN2312(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN2313(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN2314(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)RN2316(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN2318(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)RN4906(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4981,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 7895 Stücke:
Lieferzeit 21-28 Tag (e)RN4983(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN PNP 50V 100MA US6
Description: TRANS NPN PNP 50V 100MA US6
Produkt ist nicht verfügbar
RN4984(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4986(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 2730 Stücke:
Lieferzeit 21-28 Tag (e)RN4988(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN4989(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN4990(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)SSM3J15CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 0.1A CST3
Description: MOSFET P-CH 30V 0.1A CST3
auf Bestellung 885 Stücke:
Lieferzeit 21-28 Tag (e)SSM3J16CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.1A CST3
Description: MOSFET P-CH 20V 0.1A CST3
auf Bestellung 9153 Stücke:
Lieferzeit 21-28 Tag (e)SSM3J36MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.33A VESM
Description: MOSFET P-CH 20V 0.33A VESM
auf Bestellung 9353 Stücke:
Lieferzeit 21-28 Tag (e)SSM3K01T(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3.2A TSM
Description: MOSFET N-CH 30V 3.2A TSM
Produkt ist nicht verfügbar
SSM3K16CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
Produkt ist nicht verfügbar
SSM3K301T(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.5A TSM
Description: MOSFET N-CH 20V 3.5A TSM
auf Bestellung 11 Stücke:
Lieferzeit 21-28 Tag (e)SSM3K309T(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.7A TSM
Description: MOSFET N-CH 20V 4.7A TSM
Produkt ist nicht verfügbar
SSM3K310T(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 5A S-MOS
Description: MOSFET N-CH 20V 5A S-MOS
auf Bestellung 4791 Stücke:
Lieferzeit 21-28 Tag (e)SSM3K318T,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
SSM6L11TU(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A UF6 S
Description: MOSFET N/P-CH 20V 0.5A UF6 S
Produkt ist nicht verfügbar
SSM6L16FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.1A ES6
Description: MOSFET N/P-CH 20V 0.1A ES6
auf Bestellung 3829 Stücke:
Lieferzeit 21-28 Tag (e)TAR5SB18(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A SMV
Description: IC REG LDO 1.8V 0.2A SMV
Produkt ist nicht verfügbar
TC4SU11F(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Description: IC GATE NAND 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC74HC4051AFT(EL,M |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 8X1 16TSSOP
Description: IC MUX/DEMUX 8X1 16TSSOP
Produkt ist nicht verfügbar
TC74VHC27FT(ELK,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 3CH 3-INP 14-TSSOP
Description: IC GATE NOR 3CH 3-INP 14-TSSOP
Produkt ist nicht verfügbar
TC7SET08F,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Description: IC GATE AND 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC7SH02F,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
Description: IC GATE NOR 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC7SH32F,LJ |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV
Description: IC GATE OR 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC7SH34FS(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS FSV
Description: IC GATE L-MOS FSV
auf Bestellung 12469 Stücke:
Lieferzeit 21-28 Tag (e)TC7W02FK(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP US8
Description: IC GATE NOR 2CH 2-INP US8
Produkt ist nicht verfügbar
1SS190TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
6000+ | 0.13 EUR |
9000+ | 0.11 EUR |
30000+ | 0.1 EUR |
1SS272TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC61B
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC61B
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
9000+ | 0.17 EUR |
1SS302TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
1SS306TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 100MA SC61B
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE ARRAY GP 200V 100MA SC61B
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.28 EUR |
6000+ | 0.27 EUR |
1SS360(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
1SS362TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 75000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.083 EUR |
6000+ | 0.077 EUR |
9000+ | 0.066 EUR |
1SS367,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.08 EUR |
6000+ | 0.075 EUR |
9000+ | 0.062 EUR |
30000+ | 0.061 EUR |
1SS370TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA SC70
Description: DIODE GEN PURP 200V 100MA SC70
Produkt ist nicht verfügbar
1SS379,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
6000+ | 0.25 EUR |
9000+ | 0.23 EUR |
1SS382TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
6000+ | 0.2 EUR |
9000+ | 0.17 EUR |
1SS384TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 10V 100MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE ARR SCHOTT 10V 100MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.18 EUR |
6000+ | 0.17 EUR |
9000+ | 0.15 EUR |
1SS394TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
1SS397TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 100MA SC70
Description: DIODE GEN PURP 400V 100MA SC70
Produkt ist nicht verfügbar
1SS402TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.19 EUR |
9000+ | 0.17 EUR |
1SS404,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.08 EUR |
6000+ | 0.075 EUR |
9000+ | 0.062 EUR |
30000+ | 0.061 EUR |
2SA1312GRTE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
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