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2SC6026CT-Y(TPL3) Toshiba Semiconductor and Storage Description: TRANS NPN 50V 0.1A CST3
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2SK2035(T5L,F,T) 2SK2035(T5L,F,T) Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SSM
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK209-BL(TE85L,F) 2SK209-BL(TE85L,F) Toshiba Semiconductor and Storage 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209 Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
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9000+0.27 EUR
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2SK209-GR(TE85L,F) 2SK209-GR(TE85L,F) Toshiba Semiconductor and Storage 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209 Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
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2SK209-Y(TE85L,F) 2SK209-Y(TE85L,F) Toshiba Semiconductor and Storage 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209 Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
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2SK2145-BL(TE85L,F 2SK2145-BL(TE85L,F Toshiba Semiconductor and Storage 2SK2145_datasheet_en_20140301.pdf?did=19704&prodName=2SK2145 Description: JFET 2N-CH SMV
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SMV
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: 2 N-Channel (Dual)
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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2SK880-BL(TE85L,F) 2SK880-BL(TE85L,F) Toshiba Semiconductor and Storage 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880 Description: JFET N-CH 50V SC70
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: SC-70
Voltage - Breakdown (V(BR)GSS): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
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2SK880-Y(TE85L,F) 2SK880-Y(TE85L,F) Toshiba Semiconductor and Storage 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880 Description: JFET N-CH 50V USM
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Power - Max: 100 mW
Part Status: Active
Voltage - Breakdown (V(BR)GSS): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Supplier Device Package: USM
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3SK291(TE85L,F) 3SK291(TE85L,F) Toshiba Semiconductor and Storage Description: RF MOSFET 6V SMQ
Current - Test: 10 mA
Voltage - Test: 6 V
Voltage - Rated: 12.5 V
Supplier Device Package: SMQ
Noise Figure: 2.5dB
Technology: MOSFET (Metal Oxide)
Gain: 22.5dB
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
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3SK293(TE85L,F) 3SK293(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=17968&prodName=3SK293 Description: RF MOSFET 6V USQ
Gain: 22dB
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Current - Test: 10 mA
Voltage - Test: 6 V
Voltage - Rated: 12.5 V
Part Status: Not For New Designs
Supplier Device Package: USQ
Noise Figure: 2.5dB
Technology: MOSFET (Metal Oxide)
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3000+0.33 EUR
6000+0.31 EUR
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15000+0.27 EUR
21000+0.26 EUR
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CUS521,H3F CUS521,H3F Toshiba Semiconductor and Storage docget.jsp?did=8859&prodName=CUS521 Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
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DF2S12FU,H3F DF2S12FU,H3F Toshiba Semiconductor and Storage docget.jsp?did=3402&prodName=DF2S12FU Description: TVS DIODE 9VWM USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Power Line Protection: No
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DF2S6.8MFS,L3F DF2S6.8MFS,L3F Toshiba Semiconductor and Storage DF2S6.8MFS.pdf Description: TVS DIODE 5VWM 15VC FSC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 15V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: fSC
Voltage - Reverse Standoff (Typ): 5V (Max)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DF2S6.8UFS,L3F DF2S6.8UFS,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS Description: TVS DIODE 19VWM 22VC
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DF3A5.6CT(TPL3) DF3A5.6CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A5.6CT Description: TVS DIODE 2.5VWM CST3
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DF3A5.6LFU(TE85L,F DF3A5.6LFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A5.6LFU Description: TVS DIODE 3.5VWM USM
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DF3A6.2CT(TPL3) DF3A6.2CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.2CT Description: TVS DIODE 3VWM CST3
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DF3A6.2F(TE85L,F) DF3A6.2F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.2F Description: TVS DIODE 3VWM SMINI
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DF3A6.2LFU(TE85L,F DF3A6.2LFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.2LFU Description: TVS DIODE 5VWM USM
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DF3A6.8CT(TPL3) DF3A6.8CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.8CT Description: TVS DIODE 5VWM CST3
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DF3A6.8LFV,L3F DF3A6.8LFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=6014&prodName=DF3A6.8LFV Description: TVS DIODE 5VWM VESM
Power Line Protection: No
Voltage - Breakdown (Min): 6.5V
Applications: General Purpose
Unidirectional Channels: 2
Supplier Device Package: VESM
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6pF @ 1MHz
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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DF3D6.8MFV(TL3,T) DF3D6.8MFV(TL3,T) Toshiba Semiconductor and Storage DF3D6.8MFV.pdf Description: TVS DIODE 5VWM 15VC VESM
Produkt ist nicht verfügbar
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DF5A5.6CJE,LM DF5A5.6CJE,LM Toshiba Semiconductor and Storage docget.jsp?did=351&prodName=DF5A5.6CJE Description: TVS DIODE 3.5VWM ESV
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: ESV
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
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20000+0.081 EUR
28000+0.077 EUR
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DF5A6.8LF,LF DF5A6.8LF,LF Toshiba Semiconductor and Storage DF5A6.8LF_datasheet_en_20140301.pdf?did=3422&prodName=DF5A6.8LF Description: TVS DIODE 5VWM SMV
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 4
Supplier Device Package: SMV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6pF @ 1MHz
Applications: General Purpose
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DF5A6.8LJE,LM(T DF5A6.8LJE,LM(T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.8LJE Description: TVS DIODE 5VWM ESV
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HN1A01FU-Y(T5L,F,T) HN1A01FU-Y(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN1A01FU Description: TRANSISTOR PNP US6-PLN
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HN1B04FU-GR,LF HN1B04FU-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19150&prodName=HN1B04FU Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
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HN1C01F-GR(TE85L,F HN1C01F-GR(TE85L,F Toshiba Semiconductor and Storage HN1C01F_datasheet_en_20210625.pdf?did=19165&prodName=HN1C01F Description: TRANS 2NPN DUAL 50V 150MA SM6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Supplier Device Package: SM6
Frequency - Transition: 800MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
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HN1D01FU,LF(T HN1D01FU,LF(T Toshiba Semiconductor and Storage HN1D01FU_datasheet_en_20210625.pdf?did=3447&prodName=HN1D01FU Description: DIODE ARRAY GP 80V 100MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN2A01FU-GR(TE85LF HN2A01FU-GR(TE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2A01FU Description: TRANS 2PNP 50V 0.15A US6-PLN
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HN2D01JE(TE85L,F) HN2D01JE(TE85L,F) Toshiba Semiconductor and Storage Description: DIODE ARRAY GP 80V 100MA ESV
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ESV
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN2D02FU(TE85L,F) HN2D02FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2D02FU Description: DIODE ARRAY GP 80V 80MA US6
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HN2D03F(TE85L,F) HN2D03F(TE85L,F) Toshiba Semiconductor and Storage HN2D03F_datasheet_en_20140301.pdf?did=21828&prodName=HN2D03F Description: DIODE ARRAY GP 400V 100MA SM6
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 3 Independent
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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HN2S02JE(TE85L,F) HN2S02JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2S02JE Description: DIODE ARRAY SCHOTTKY 40V ESV
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HN2S03FE(TE85L,F) HN2S03FE(TE85L,F) Toshiba Semiconductor and Storage HN2S03FE.pdf Description: DIODE ARRAY SCHOTTKY 20V ES6
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HN2S03T(TE85L) HN2S03T(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2S03T Description: DIODE ARRAY SCHOTTKY 20V TESQ
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HN3A51F(TE85L,F) HN3A51F(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS 2PNP DUAL 120V 100MA SM6
Supplier Device Package: SM6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN3C51F-BL(TE85L,F HN3C51F-BL(TE85L,F Toshiba Semiconductor and Storage HN3C51F.pdf Description: TRANS 2NPN DUAL 120V 100MA SM6
Supplier Device Package: SM6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN3C51F-GR(TE85L,F HN3C51F-GR(TE85L,F Toshiba Semiconductor and Storage HN3C51F.pdf Description: TRANS 2NPN DUAL 120V 100MA SM6
Supplier Device Package: SM6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN4B01JE(TE85L,F) HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage HN4B01JE_datasheet_en_20140301.pdf?did=22310&prodName=HN4B01JE Description: TRANS NPN/PNP 50V 0.15A ESV PLN
Supplier Device Package: ESV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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HN4B04J(TE85L,F) HN4B04J(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS NPN/PNP 30V 0.5A SMV
Part Status: Obsolete
Supplier Device Package: SMV
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 500mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN4C51J(TE85L,F) HN4C51J(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22314&prodName=HN4C51J Description: TRANS 2NPN 120V 0.1A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Base
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
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3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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JDP2S02ACT(TPL3) JDP2S02ACT(TPL3) Toshiba Semiconductor and Storage JDP2S02ACT_datasheet_en_20140301.pdf?did=22501&prodName=JDP2S02ACT Description: RF DIODE PIN 30V CST2
Current - Max: 50 mA
Part Status: Active
Supplier Device Package: CST2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JDP2S02AFS(TPL3) JDP2S02AFS(TPL3) Toshiba Semiconductor and Storage Description: RF DIODE PIN 30V FSC
Current - Max: 50 mA
Supplier Device Package: fSC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JDP2S08SC(TPL3) JDP2S08SC(TPL3) Toshiba Semiconductor and Storage Description: RF DIODE PIN 30V SC2
Current - Max: 50 mA
Supplier Device Package: SC2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JDV2S10FS(TPL3) JDV2S10FS(TPL3) Toshiba Semiconductor and Storage JDV2S10FS_datasheet_en_20140301.pdf?did=6207&prodName=JDV2S10FS Description: RF DIODE STANDARD 10V FSC
Produkt ist nicht verfügbar
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JDV2S41FS(TPL3) JDV2S41FS(TPL3) Toshiba Semiconductor and Storage Description: DIODE VAR 15V UHF FSC
Voltage - Peak Reverse (Max): 15 V
Supplier Device Package: fSC
Capacitance @ Vr, F: 16pF @ 2V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MT3S20TU(TE85L) MT3S20TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=MT3S20TU Description: TRANS RF NPN 7GHZ 80MA UFM
auf Bestellung 3000 Stücke:
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 Mindestbestellmenge: 3000 Stücke
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RFM00U7U(TE85L,F) RFM00U7U(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RFM00U7U Description: FET RF N-CH 20V 520MHZ USQ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RFM04U6P(TE12L,F) RFM04U6P(TE12L,F) Toshiba Semiconductor and Storage RFM04U6P_datasheet_en_20140301.pdf?did=1927&prodName=RFM04U6P Description: RF MOSFET 6V PW-MINI
Current - Test: 500 mA
Voltage - Test: 6 V
Voltage - Rated: 16 V
Supplier Device Package: PW-MINI
Technology: MOSFET
Gain: 13.3dB
Power - Output: 4.3W
Configuration: N-Channel
Frequency: 470MHz
Mounting Type: Surface Mount
Current Rating (Amps): 2A
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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RN1102MFV(TL3,T) RN1102MFV(TL3,T) Toshiba Semiconductor and Storage 21311.pdf Description: TRANSISTOR NPN VESM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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RN1103,LF(CT RN1103,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1101 Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN1104MFV,L3F RN1104MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.055 EUR
Mindestbestellmenge: 8000 Stücke
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RN1105MFV,L3F RN1105MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 0.15W VESM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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RN1105(T5L,F,T) RN1105(T5L,F,T) Toshiba Semiconductor and Storage 6039.pdf Description: TRANSISTOR NPN SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 3000 Stücke
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RN1106MFV(TL3,T) RN1106MFV(TL3,T) Toshiba Semiconductor and Storage RN110xMFV.pdf Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1108(T5L,F,T) RN1108(T5L,F,T) Toshiba Semiconductor and Storage RN1107,8,9.pdf Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN1109(T5L,F,T) RN1109(T5L,F,T) Toshiba Semiconductor and Storage RN1107,8,9.pdf Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN1112(T5L,F,T) RN1112(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1112 Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
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RN1113(T5L,F,T) Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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3000+0.071 EUR
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2SC6026CT-Y(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
Produkt ist nicht verfügbar
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2SK2035(T5L,F,T)
2SK2035(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SSM
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK209-BL(TE85L,F) 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209
2SK209-BL(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 33000 Stücke:
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3000+0.31 EUR
9000+0.27 EUR
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2SK209-GR(TE85L,F) 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209
2SK209-GR(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 21000 Stücke:
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3000+0.33 EUR
9000+0.29 EUR
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2SK209-Y(TE85L,F) 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209
2SK209-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
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3000+0.33 EUR
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2SK2145-BL(TE85L,F 2SK2145_datasheet_en_20140301.pdf?did=19704&prodName=2SK2145
2SK2145-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: JFET 2N-CH SMV
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SMV
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: 2 N-Channel (Dual)
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SK880-BL(TE85L,F) 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880
2SK880-BL(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: SC-70
Voltage - Breakdown (V(BR)GSS): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
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2SK880-Y(TE85L,F) 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880
2SK880-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V USM
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Power - Max: 100 mW
Part Status: Active
Voltage - Breakdown (V(BR)GSS): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Supplier Device Package: USM
Produkt ist nicht verfügbar
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3SK291(TE85L,F)
3SK291(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V SMQ
Current - Test: 10 mA
Voltage - Test: 6 V
Voltage - Rated: 12.5 V
Supplier Device Package: SMQ
Noise Figure: 2.5dB
Technology: MOSFET (Metal Oxide)
Gain: 22.5dB
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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3SK293(TE85L,F) docget.jsp?did=17968&prodName=3SK293
3SK293(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V USQ
Gain: 22dB
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Current - Test: 10 mA
Voltage - Test: 6 V
Voltage - Rated: 12.5 V
Part Status: Not For New Designs
Supplier Device Package: USQ
Noise Figure: 2.5dB
Technology: MOSFET (Metal Oxide)
auf Bestellung 30000 Stücke:
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3000+0.33 EUR
6000+0.31 EUR
9000+0.29 EUR
15000+0.27 EUR
21000+0.26 EUR
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CUS521,H3F docget.jsp?did=8859&prodName=CUS521
CUS521,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
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3000+0.07 EUR
6000+0.063 EUR
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DF2S12FU,H3F docget.jsp?did=3402&prodName=DF2S12FU
DF2S12FU,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Power Line Protection: No
auf Bestellung 27000 Stücke:
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AnzahlPrivatkunde
3000+0.069 EUR
9000+0.057 EUR
Mindestbestellmenge: 3000 Stücke
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DF2S6.8MFS,L3F DF2S6.8MFS.pdf
DF2S6.8MFS,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 15VC FSC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 15V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: fSC
Voltage - Reverse Standoff (Typ): 5V (Max)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DF2S6.8UFS,L3F docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS
DF2S6.8UFS,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Produkt ist nicht verfügbar
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DF3A5.6CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF3A5.6CT
DF3A5.6CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM CST3
auf Bestellung 10 Stücke:
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DF3A5.6LFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF3A5.6LFU
DF3A5.6LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USM
Produkt ist nicht verfügbar
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DF3A6.2CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF3A6.2CT
DF3A6.2CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM CST3
auf Bestellung 10 Stücke:
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DF3A6.2F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF3A6.2F
DF3A6.2F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMINI
auf Bestellung 3000 Stücke:
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DF3A6.2LFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF3A6.2LFU
DF3A6.2LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
auf Bestellung 11 Stücke:
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DF3A6.8CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF3A6.8CT
DF3A6.8CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST3
auf Bestellung 11 Stücke:
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DF3A6.8LFV,L3F docget.jsp?did=6014&prodName=DF3A6.8LFV
DF3A6.8LFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM VESM
Power Line Protection: No
Voltage - Breakdown (Min): 6.5V
Applications: General Purpose
Unidirectional Channels: 2
Supplier Device Package: VESM
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6pF @ 1MHz
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.04 EUR
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DF3D6.8MFV(TL3,T) DF3D6.8MFV.pdf
DF3D6.8MFV(TL3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 15VC VESM
Produkt ist nicht verfügbar
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DF5A5.6CJE,LM docget.jsp?did=351&prodName=DF5A5.6CJE
DF5A5.6CJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM ESV
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: ESV
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.1 EUR
8000+0.092 EUR
12000+0.087 EUR
20000+0.081 EUR
28000+0.077 EUR
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DF5A6.8LF,LF DF5A6.8LF_datasheet_en_20140301.pdf?did=3422&prodName=DF5A6.8LF
DF5A6.8LF,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 4
Supplier Device Package: SMV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6pF @ 1MHz
Applications: General Purpose
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
6000+0.094 EUR
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DF5A6.8LJE,LM(T docget.jsp?type=datasheet&lang=en&pid=DF5A6.8LJE
DF5A6.8LJE,LM(T
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 4000 Stücke
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HN1A01FU-Y(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=HN1A01FU
HN1A01FU-Y(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR PNP US6-PLN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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HN1B04FU-GR,LF docget.jsp?did=19150&prodName=HN1B04FU
HN1B04FU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
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HN1C01F-GR(TE85L,F HN1C01F_datasheet_en_20210625.pdf?did=19165&prodName=HN1C01F
HN1C01F-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA SM6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Supplier Device Package: SM6
Frequency - Transition: 800MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Produkt ist nicht verfügbar
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HN1D01FU,LF(T HN1D01FU_datasheet_en_20210625.pdf?did=3447&prodName=HN1D01FU
HN1D01FU,LF(T
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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HN2A01FU-GR(TE85LF docget.jsp?type=datasheet&lang=en&pid=HN2A01FU
HN2A01FU-GR(TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A US6-PLN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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HN2D01JE(TE85L,F)
HN2D01JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ESV
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ESV
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN2D02FU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=HN2D02FU
HN2D02FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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HN2D03F(TE85L,F) HN2D03F_datasheet_en_20140301.pdf?did=21828&prodName=HN2D03F
HN2D03F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA SM6
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 3 Independent
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
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HN2S02JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=HN2S02JE
HN2S02JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 40V ESV
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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HN2S03FE(TE85L,F) HN2S03FE.pdf
HN2S03FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 20V ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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HN2S03T(TE85L) docget.jsp?type=datasheet&lang=en&pid=HN2S03T
HN2S03T(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 20V TESQ
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 4000 Stücke
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HN3A51F(TE85L,F)
HN3A51F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SM6
Supplier Device Package: SM6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN3C51F-BL(TE85L,F HN3C51F.pdf
HN3C51F-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 120V 100MA SM6
Supplier Device Package: SM6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN3C51F-GR(TE85L,F HN3C51F.pdf
HN3C51F-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 120V 100MA SM6
Supplier Device Package: SM6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN4B01JE(TE85L,F) HN4B01JE_datasheet_en_20140301.pdf?did=22310&prodName=HN4B01JE
HN4B01JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ESV PLN
Supplier Device Package: ESV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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HN4B04J(TE85L,F)
HN4B04J(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SMV
Part Status: Obsolete
Supplier Device Package: SMV
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 500mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN4C51J(TE85L,F) docget.jsp?did=22314&prodName=HN4C51J
HN4C51J(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 120V 0.1A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Base
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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JDP2S02ACT(TPL3) JDP2S02ACT_datasheet_en_20140301.pdf?did=22501&prodName=JDP2S02ACT
JDP2S02ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V CST2
Current - Max: 50 mA
Part Status: Active
Supplier Device Package: CST2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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JDP2S02AFS(TPL3)
JDP2S02AFS(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V FSC
Current - Max: 50 mA
Supplier Device Package: fSC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JDP2S08SC(TPL3)
JDP2S08SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V SC2
Current - Max: 50 mA
Supplier Device Package: SC2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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JDV2S10FS(TPL3) JDV2S10FS_datasheet_en_20140301.pdf?did=6207&prodName=JDV2S10FS
JDV2S10FS(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE STANDARD 10V FSC
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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JDV2S41FS(TPL3)
JDV2S41FS(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VAR 15V UHF FSC
Voltage - Peak Reverse (Max): 15 V
Supplier Device Package: fSC
Capacitance @ Vr, F: 16pF @ 2V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MT3S20TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=MT3S20TU
MT3S20TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 7GHZ 80MA UFM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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RFM00U7U(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RFM00U7U
RFM00U7U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: FET RF N-CH 20V 520MHZ USQ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RFM04U6P(TE12L,F) RFM04U6P_datasheet_en_20140301.pdf?did=1927&prodName=RFM04U6P
RFM04U6P(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V PW-MINI
Current - Test: 500 mA
Voltage - Test: 6 V
Voltage - Rated: 16 V
Supplier Device Package: PW-MINI
Technology: MOSFET
Gain: 13.3dB
Power - Output: 4.3W
Configuration: N-Channel
Frequency: 470MHz
Mounting Type: Surface Mount
Current Rating (Amps): 2A
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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RN1102MFV(TL3,T) 21311.pdf
RN1102MFV(TL3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN VESM
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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RN1103,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1101
RN1103,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1104MFV,L3F docget.jsp?did=5879&prodName=RN1104MFV
RN1104MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.055 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1105MFV,L3F docget.jsp?did=5879&prodName=RN1104MFV
RN1105MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W VESM
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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RN1105(T5L,F,T) 6039.pdf
RN1105(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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RN1106MFV(TL3,T) RN110xMFV.pdf
RN1106MFV(TL3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1108(T5L,F,T) RN1107,8,9.pdf
RN1108(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1109(T5L,F,T) RN1107,8,9.pdf
RN1109(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1112(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1112
RN1112(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1113(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.071 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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