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1SS378(TE85L,F) 1SS378(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=3353&prodName=1SS378 Description: DIODE ARR SCHOTT 10V 100MA SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.07 EUR
6000+0.07 EUR
9000+0.07 EUR
15000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
1SS383(TE85L,F) 1SS383(TE85L,F) Toshiba Semiconductor and Storage 1SS383_datasheet_en_20150115.pdf?did=3360&prodName=1SS383 Description: DIODE ARRAY SCHOTT 40V 100MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Produkt ist nicht verfügbar
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1SS387CT,L3F 1SS387CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=22013&prodName=1SS387CT Description: DIODE STANDARD 80V 100MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.05 EUR
20000+0.04 EUR
Mindestbestellmenge: 10000
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1SS392,LF 1SS392,LF Toshiba Semiconductor and Storage docget.jsp?did=3375&prodName=1SS392 Description: DIODE ARR SCHOTT 40V 100MA SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Produkt ist nicht verfügbar
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1SS401(TE85L,F) 1SS401(TE85L,F) Toshiba Semiconductor and Storage 1SS401_datasheet_en_20140301.pdf?did=3393&prodName=1SS401 Description: DIODE SCHOTTKY 20V 300MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Produkt ist nicht verfügbar
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1SS413,L3M 1SS413,L3M Toshiba Semiconductor and Storage docget.jsp?did=22694&prodName=1SS413 Description: DIODE SCHOTTKY 20V 50MA FSC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.04 EUR
20000+0.04 EUR
30000+0.04 EUR
Mindestbestellmenge: 10000
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1SS416CT,L3F 1SS416CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=22034&prodName=1SS416CT Description: DIODE SCHOTTKY 30V 100MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.06 EUR
20000+0.05 EUR
50000+0.05 EUR
Mindestbestellmenge: 10000
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1SS416(TL3,T) 1SS416(TL3,T) Toshiba Semiconductor and Storage 1SS416_en_datasheet_071101.pdf Description: DIODE SCHOTTKY 30V 100MA FSC
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
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1SS417CT,L3F 1SS417CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=22155&prodName=1SS417CT Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.06 EUR
20000+0.05 EUR
Mindestbestellmenge: 10000
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1SS417,L3M 1SS417,L3M Toshiba Semiconductor and Storage docget.jsp?did=345&prodName=1SS417 Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.05 EUR
Mindestbestellmenge: 10000
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1SS423(TE85L,F) 1SS423(TE85L,F) Toshiba Semiconductor and Storage 1SS423_datasheet_en_20220720.pdf?did=4401&prodName=1SS423 Description: DIODE ARRAY SCHOTT 40V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
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1SS424(TPL3,F) 1SS424(TPL3,F) Toshiba Semiconductor and Storage 1SS424_datasheet_en_20140301.pdf?did=4402&prodName=1SS424 Description: DIODE SCHOTTKY 20V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.05 EUR
Mindestbestellmenge: 8000
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2SA1163-BL,LF 2SA1163-BL,LF Toshiba Semiconductor and Storage docget.jsp?did=19353&prodName=2SA1163 Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.08 EUR
6000+0.08 EUR
9000+0.07 EUR
15000+0.07 EUR
21000+0.06 EUR
Mindestbestellmenge: 3000
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2SA1312-BL(TE85L,F 2SA1312-BL(TE85L,F Toshiba Semiconductor and Storage Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1588-Y,LF 2SA1588-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19174&prodName=2SA1588 Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.07 EUR
6000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA1832-GR,LF 2SA1832-GR,LF Toshiba Semiconductor and Storage 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.05 EUR
Mindestbestellmenge: 3000
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2SA1873-GR(TE85L,F 2SA1873-GR(TE85L,F Toshiba Semiconductor and Storage 2SA1873-%28G%2CY%29.pdf Description: TRANS 2PNP 50V 150MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1873-Y(TE85L,F) 2SA1873-Y(TE85L,F) Toshiba Semiconductor and Storage 2SA1873-%28G%2CY%29.pdf Description: TRANS 2PNP 50V 150MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
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2SA2154CT-GR,L3F 2SA2154CT-GR,L3F Toshiba Semiconductor and Storage docget.jsp?did=711&prodName=2SA2154CT Description: TRANS PNP 50V 0.1A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA2154CT-Y(TPL3) 2SA2154CT-Y(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=711&prodName=2SA2154CT Description: TRANS PNP 50V 0.1A CST3
Produkt ist nicht verfügbar
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2SA2154MFV-GR(TPL3 2SA2154MFV-GR(TPL3 Toshiba Semiconductor and Storage docget.jsp?did=6105&prodName=2SA2154MFV Description: TRANS PNP 50V 0.15A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC2714-Y(TE85L,F) 2SC2714-Y(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=17590&prodName=2SC2714 Description: RF TRANS NPN 30V 550MHZ S MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Produkt ist nicht verfügbar
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2SC2859-Y(TE85L,F) 2SC2859-Y(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS NPN 30V 0.5A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC3138-Y(TE85L,F) 2SC3138-Y(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS NPN 200V 0.05A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC3265-Y,LF 2SC3265-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19281&prodName=2SC3265 Description: TRANS NPN 25V 0.8A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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2SC3324-BL(TE85L,F 2SC3324-BL(TE85L,F Toshiba Semiconductor and Storage 2SC3324.pdf Description: TRANS NPN 120V 0.1A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC3326-A,LF 2SC3326-A,LF Toshiba Semiconductor and Storage docget.jsp?did=19249&prodName=2SC3326 Description: TRANS NPN 20V 0.3A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
9000+0.10 EUR
15000+0.09 EUR
21000+0.09 EUR
30000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SC4207-GR(TE85L,F 2SC4207-GR(TE85L,F Toshiba Semiconductor and Storage 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207 Description: TRANS 2NPN 50V 150MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
9000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SC4207-Y(TE85L,F) 2SC4207-Y(TE85L,F) Toshiba Semiconductor and Storage 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207 Description: TRANS 2NPN 50V 150MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.10 EUR
9000+0.09 EUR
15000+0.09 EUR
21000+0.08 EUR
30000+0.08 EUR
Mindestbestellmenge: 3000
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2SC4215-Y(TE85L,F) 2SC4215-Y(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 30V 550MHZ USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 17dB ~ 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Supplier Device Package: SC-70
Part Status: Active
Produkt ist nicht verfügbar
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2SC4738-BL(TE85L,F 2SC4738-BL(TE85L,F Toshiba Semiconductor and Storage 2SC4738_datasheet_en_20210629.pdf?did=19314&prodName=2SC4738 Description: TRANS NPN 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC4738-Y,LF 2SC4738-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19314&prodName=2SC4738 Description: TRANS NPN 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.06 EUR
6000+0.05 EUR
9000+0.05 EUR
Mindestbestellmenge: 3000
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2SC4944-GR(TE85L,F 2SC4944-GR(TE85L,F Toshiba Semiconductor and Storage 2SC4944_datasheet_en_20210625.pdf?did=19320&prodName=2SC4944 Description: TRANS NPN 50V 0.15A USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.08 EUR
Mindestbestellmenge: 3000
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2SC4944-Y(TE85L,F) 2SC4944-Y(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19320&prodName=2SC4944 Description: TRANS 2NPN 50V 0.15A USV
Produkt ist nicht verfügbar
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2SC5065-Y(TE85L,F) 2SC5065-Y(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=17646&prodName=2SC5065 Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Active
Produkt ist nicht verfügbar
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2SC5084-O(TE85L,F) 2SC5084-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5085-Y(TE85L,F) 2SC5085-Y(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5095-O(TE85L,F) 2SC5095-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5095-R(TE85L,F) 2SC5095-R(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC6026CT-Y(TPL3) 2SC6026CT-Y(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=713&prodName=2SC6026CT Description: TRANS NPN 50V 0.1A CST3
Produkt ist nicht verfügbar
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2SK2035(T5L,F,T) 2SK2035(T5L,F,T) Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SSM
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK209-BL(TE85L,F) 2SK209-BL(TE85L,F) Toshiba Semiconductor and Storage 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209 Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.20 EUR
21000+0.19 EUR
Mindestbestellmenge: 3000
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2SK209-GR(TE85L,F) 2SK209-GR(TE85L,F) Toshiba Semiconductor and Storage 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209 Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
6000+0.24 EUR
Mindestbestellmenge: 3000
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2SK209-Y(TE85L,F) 2SK209-Y(TE85L,F) Toshiba Semiconductor and Storage 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209 Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+0.25 EUR
9000+0.22 EUR
Mindestbestellmenge: 3000
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2SK2145-BL(TE85L,F 2SK2145-BL(TE85L,F Toshiba Semiconductor and Storage 2SK2145_datasheet_en_20140301.pdf?did=19704&prodName=2SK2145 Description: JFET 2N-CH SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Supplier Device Package: SMV
Part Status: Active
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.41 EUR
6000+0.38 EUR
9000+0.36 EUR
Mindestbestellmenge: 3000
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2SK880-BL(TE85L,F) 2SK880-BL(TE85L,F) Toshiba Semiconductor and Storage 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880 Description: JFET N-CH 50V SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 3000 Stücke:
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3000+0.33 EUR
Mindestbestellmenge: 3000
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2SK880-Y(TE85L,F) 2SK880-Y(TE85L,F) Toshiba Semiconductor and Storage 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880 Description: JFET N-CH 50V USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Produkt ist nicht verfügbar
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3SK291(TE85L,F) 3SK291(TE85L,F) Toshiba Semiconductor and Storage Description: RF MOSFET 6V SMQ
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: SMQ
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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3SK293(TE85L,F) 3SK293(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=17968&prodName=3SK293 Description: RF MOSFET 6V USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: USQ
Part Status: Not For New Designs
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.28 EUR
6000+0.26 EUR
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15000+0.23 EUR
21000+0.22 EUR
Mindestbestellmenge: 3000
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CUS521,H3F CUS521,H3F Toshiba Semiconductor and Storage docget.jsp?did=8859&prodName=CUS521 Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 3000 Stücke:
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3000+0.04 EUR
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DF2S12FU,H3F DF2S12FU,H3F Toshiba Semiconductor and Storage DF2S12FU_datasheet_en_20140301.pdf?did=3402&prodName=DF2S12FU Description: TVS DIODE 9VWM USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Power Line Protection: No
auf Bestellung 6000 Stücke:
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3000+0.03 EUR
6000+0.03 EUR
Mindestbestellmenge: 3000
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DF2S6.8MFS,L3F DF2S6.8MFS,L3F Toshiba Semiconductor and Storage DF2S6.8MFS.pdf Description: TVS DIODE 5VWM 15VC FSC
Produkt ist nicht verfügbar
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DF2S6.8UFS,L3F DF2S6.8UFS,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS Description: TVS DIODE 19VWM 22VC
Produkt ist nicht verfügbar
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DF3A5.6CT(TPL3) DF3A5.6CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A5.6CT Description: TVS DIODE 2.5VWM CST3
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DF3A5.6LFU(TE85L,F DF3A5.6LFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A5.6LFU Description: TVS DIODE 3.5VWM USM
Produkt ist nicht verfügbar
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DF3A6.2CT(TPL3) DF3A6.2CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.2CT Description: TVS DIODE 3VWM CST3
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DF3A6.2F(TE85L,F) DF3A6.2F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.2F Description: TVS DIODE 3VWM SMINI
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DF3A6.2LFU(TE85L,F DF3A6.2LFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.2LFU Description: TVS DIODE 5VWM USM
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DF3A6.8CT(TPL3) DF3A6.8CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A6.8CT Description: TVS DIODE 5VWM CST3
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DF3A6.8LFV,L3F DF3A6.8LFV,L3F Toshiba Semiconductor and Storage DF3A6.8LFV_datasheet_en_20140301.pdf?did=6014&prodName=DF3A6.8LFV Description: TVS DIODE 5VWM VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.04 EUR
16000+0.04 EUR
24000+0.04 EUR
40000+0.04 EUR
Mindestbestellmenge: 8000
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1SS378(TE85L,F) docget.jsp?did=3353&prodName=1SS378
1SS378(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 10V 100MA SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.07 EUR
9000+0.07 EUR
15000+0.06 EUR
Mindestbestellmenge: 3000
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1SS383(TE85L,F) 1SS383_datasheet_en_20150115.pdf?did=3360&prodName=1SS383
1SS383(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 40V 100MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Produkt ist nicht verfügbar
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1SS387CT,L3F docget.jsp?did=22013&prodName=1SS387CT
1SS387CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.05 EUR
20000+0.04 EUR
Mindestbestellmenge: 10000
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1SS392,LF docget.jsp?did=3375&prodName=1SS392
1SS392,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 40V 100MA SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Produkt ist nicht verfügbar
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1SS401(TE85L,F) 1SS401_datasheet_en_20140301.pdf?did=3393&prodName=1SS401
1SS401(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 300MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Produkt ist nicht verfügbar
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1SS413,L3M docget.jsp?did=22694&prodName=1SS413
1SS413,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA FSC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.04 EUR
20000+0.04 EUR
30000+0.04 EUR
Mindestbestellmenge: 10000
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1SS416CT,L3F docget.jsp?did=22034&prodName=1SS416CT
1SS416CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.06 EUR
20000+0.05 EUR
50000+0.05 EUR
Mindestbestellmenge: 10000
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1SS416(TL3,T) 1SS416_en_datasheet_071101.pdf
1SS416(TL3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA FSC
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
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1SS417CT,L3F docget.jsp?did=22155&prodName=1SS417CT
1SS417CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.06 EUR
20000+0.05 EUR
Mindestbestellmenge: 10000
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1SS417,L3M docget.jsp?did=345&prodName=1SS417
1SS417,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA FSC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.05 EUR
Mindestbestellmenge: 10000
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1SS423(TE85L,F) 1SS423_datasheet_en_20220720.pdf?did=4401&prodName=1SS423
1SS423(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 40V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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1SS424(TPL3,F) 1SS424_datasheet_en_20140301.pdf?did=4402&prodName=1SS424
1SS424(TPL3,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.05 EUR
Mindestbestellmenge: 8000
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2SA1163-BL,LF docget.jsp?did=19353&prodName=2SA1163
2SA1163-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.08 EUR
9000+0.07 EUR
15000+0.07 EUR
21000+0.06 EUR
Mindestbestellmenge: 3000
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2SA1312-BL(TE85L,F
2SA1312-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SA1588-Y,LF docget.jsp?did=19174&prodName=2SA1588
2SA1588-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA1832-GR,LF 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832
2SA1832-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA1873-GR(TE85L,F 2SA1873-%28G%2CY%29.pdf
2SA1873-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 150MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
Produkt ist nicht verfügbar
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2SA1873-Y(TE85L,F) 2SA1873-%28G%2CY%29.pdf
2SA1873-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 150MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA2154CT-GR,L3F docget.jsp?did=711&prodName=2SA2154CT
2SA2154CT-GR,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.1A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SA2154CT-Y(TPL3) docget.jsp?did=711&prodName=2SA2154CT
2SA2154CT-Y(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.1A CST3
Produkt ist nicht verfügbar
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2SA2154MFV-GR(TPL3 docget.jsp?did=6105&prodName=2SA2154MFV
2SA2154MFV-GR(TPL3
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC2714-Y(TE85L,F) docget.jsp?did=17590&prodName=2SC2714
2SC2714-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ S MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Produkt ist nicht verfügbar
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2SC2859-Y(TE85L,F)
2SC2859-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 30V 0.5A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC3138-Y(TE85L,F)
2SC3138-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 0.05A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC3265-Y,LF docget.jsp?did=19281&prodName=2SC3265
2SC3265-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 25V 0.8A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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2SC3324-BL(TE85L,F 2SC3324.pdf
2SC3324-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC3326-A,LF docget.jsp?did=19249&prodName=2SC3326
2SC3326-A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
9000+0.10 EUR
15000+0.09 EUR
21000+0.09 EUR
30000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SC4207-GR(TE85L,F 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207
2SC4207-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 150MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
9000+0.09 EUR
Mindestbestellmenge: 3000
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2SC4207-Y(TE85L,F) 2SC4207_datasheet_en_20210625.pdf?did=19298&prodName=2SC4207
2SC4207-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 150MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
9000+0.09 EUR
15000+0.09 EUR
21000+0.08 EUR
30000+0.08 EUR
Mindestbestellmenge: 3000
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2SC4215-Y(TE85L,F)
2SC4215-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 17dB ~ 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Supplier Device Package: SC-70
Part Status: Active
Produkt ist nicht verfügbar
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2SC4738-BL(TE85L,F 2SC4738_datasheet_en_20210629.pdf?did=19314&prodName=2SC4738
2SC4738-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC4738-Y,LF docget.jsp?did=19314&prodName=2SC4738
2SC4738-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.05 EUR
9000+0.05 EUR
Mindestbestellmenge: 3000
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2SC4944-GR(TE85L,F 2SC4944_datasheet_en_20210625.pdf?did=19320&prodName=2SC4944
2SC4944-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
Mindestbestellmenge: 3000
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2SC4944-Y(TE85L,F) docget.jsp?did=19320&prodName=2SC4944
2SC4944-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A USV
Produkt ist nicht verfügbar
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2SC5065-Y(TE85L,F) docget.jsp?did=17646&prodName=2SC5065
2SC5065-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Active
Produkt ist nicht verfügbar
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2SC5084-O(TE85L,F)
2SC5084-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5085-Y(TE85L,F)
2SC5085-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5095-O(TE85L,F)
2SC5095-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5095-R(TE85L,F)
2SC5095-R(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC6026CT-Y(TPL3) docget.jsp?did=713&prodName=2SC6026CT
2SC6026CT-Y(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
Produkt ist nicht verfügbar
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2SK2035(T5L,F,T)
2SK2035(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SSM
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK209-BL(TE85L,F) 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209
2SK209-BL(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.20 EUR
21000+0.19 EUR
Mindestbestellmenge: 3000
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2SK209-GR(TE85L,F) 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209
2SK209-GR(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
Mindestbestellmenge: 3000
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2SK209-Y(TE85L,F) 2SK209_datasheet_en_20140301.pdf?did=19662&prodName=2SK209
2SK209-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 14MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 14 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 150 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
6000+0.25 EUR
9000+0.22 EUR
Mindestbestellmenge: 3000
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2SK2145-BL(TE85L,F 2SK2145_datasheet_en_20140301.pdf?did=19704&prodName=2SK2145
2SK2145-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: JFET 2N-CH SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Supplier Device Package: SMV
Part Status: Active
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
6000+0.38 EUR
9000+0.36 EUR
Mindestbestellmenge: 3000
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2SK880-BL(TE85L,F) 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880
2SK880-BL(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
Mindestbestellmenge: 3000
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2SK880-Y(TE85L,F) 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880
2SK880-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Produkt ist nicht verfügbar
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3SK291(TE85L,F)
3SK291(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V SMQ
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: SMQ
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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3SK293(TE85L,F) docget.jsp?did=17968&prodName=3SK293
3SK293(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: USQ
Part Status: Not For New Designs
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
6000+0.26 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.22 EUR
Mindestbestellmenge: 3000
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CUS521,H3F docget.jsp?did=8859&prodName=CUS521
CUS521,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.04 EUR
Mindestbestellmenge: 3000
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DF2S12FU,H3F DF2S12FU_datasheet_en_20140301.pdf?did=3402&prodName=DF2S12FU
DF2S12FU,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.03 EUR
6000+0.03 EUR
Mindestbestellmenge: 3000
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DF2S6.8MFS,L3F DF2S6.8MFS.pdf
DF2S6.8MFS,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 15VC FSC
Produkt ist nicht verfügbar
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DF2S6.8UFS,L3F docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS
DF2S6.8UFS,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Produkt ist nicht verfügbar
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DF3A5.6CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF3A5.6CT
DF3A5.6CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM CST3
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
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DF3A5.6LFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF3A5.6LFU
DF3A5.6LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USM
Produkt ist nicht verfügbar
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DF3A6.2CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF3A6.2CT
DF3A6.2CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM CST3
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
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DF3A6.2F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF3A6.2F
DF3A6.2F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMINI
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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DF3A6.2LFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF3A6.2LFU
DF3A6.2LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
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DF3A6.8CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=DF3A6.8CT
DF3A6.8CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST3
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
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DF3A6.8LFV,L3F DF3A6.8LFV_datasheet_en_20140301.pdf?did=6014&prodName=DF3A6.8LFV
DF3A6.8LFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.04 EUR
16000+0.04 EUR
24000+0.04 EUR
40000+0.04 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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