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TK10Q60W,S1VQ TK10Q60W,S1VQ Toshiba Semiconductor and Storage TK10Q60W_datasheet_en_20131225.pdf?did=13503&prodName=TK10Q60W Description: MOSFET N-CH 600V 9.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.70 EUR
75+3.77 EUR
Mindestbestellmenge: 4
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TK16C60W,S1VQ TK16C60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?pid=TK16C60W&lang=en&type=datasheet Description: MOSFET N-CH 600V 15.8A I2PAK
auf Bestellung 280 Stücke:
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TK20C60W,S1VQ TK20C60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK20C60W Description: MOSFET N-CH 600V 20A I2PAK
auf Bestellung 288 Stücke:
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TK10V60W,LVQ TK10V60W,LVQ Toshiba Semiconductor and Storage TK10V60W_datasheet_en_20160520.pdf?did=14217&prodName=TK10V60W Description: MOSFET N-CH 600V 9.7A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 88.3W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TK12V60W,LVQ TK12V60W,LVQ Toshiba Semiconductor and Storage TK12V60W_datasheet_en_20150203.pdf?did=14171&prodName=TK12V60W Description: MOSFET N-CH 600V 11.5A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK16V60W,LVQ TK16V60W,LVQ Toshiba Semiconductor and Storage TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W,LVQ TK20V60W,LVQ Toshiba Semiconductor and Storage TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
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TK31V60W,LVQ TK31V60W,LVQ Toshiba Semiconductor and Storage TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
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TK20A60W,S5VX TK20A60W,S5VX Toshiba Semiconductor and Storage docget.jsp?did=14063&prodName=TK20A60W Description: MOSFET N-CH 600V 20A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.23 EUR
Mindestbestellmenge: 3
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TK20N60W,S1VF TK20N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13898&prodName=TK20N60W Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.06 EUR
30+7.60 EUR
Mindestbestellmenge: 2
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TPN11003NL,LQ TPN11003NL,LQ Toshiba Semiconductor and Storage TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
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TPN8R903NL,LQ TPN8R903NL,LQ Toshiba Semiconductor and Storage TPN8R903NL_datasheet_en_20140218.pdf?did=14026&prodName=TPN8R903NL Description: MOSFET N-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.50 EUR
Mindestbestellmenge: 3000
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TPN6R003NL,LQ TPN6R003NL,LQ Toshiba Semiconductor and Storage TPN6R003NL_datasheet_en_20140218.pdf?did=14069&prodName=TPN6R003NL Description: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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TPH11003NL,LQ TPH11003NL,LQ Toshiba Semiconductor and Storage TPH11003NL_datasheet_en_20140217.pdf?did=14042&prodName=TPH11003NL Description: MOSFET N CH 30V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
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TPH8R903NL,LQ TPH8R903NL,LQ Toshiba Semiconductor and Storage TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL Description: MOSFET N CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
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TPH6R003NL,LQ TPH6R003NL,LQ Toshiba Semiconductor and Storage TPH6R003NL_datasheet_en_20140218.pdf?did=14012&prodName=TPH6R003NL Description: MOSFET N CH 30V 38A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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TPN1600ANH,L1Q TPN1600ANH,L1Q Toshiba Semiconductor and Storage TPN1600ANH_datasheet_en_20191018.pdf?did=13538&prodName=TPN1600ANH Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.56 EUR
Mindestbestellmenge: 5000
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TP86R203NL,LQ TP86R203NL,LQ Toshiba Semiconductor and Storage TP86R203NL_datasheet_en_20140225.pdf?did=14088&prodName=TP86R203NL Description: MOSFET N CH 30V 19A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.54 EUR
5000+0.52 EUR
Mindestbestellmenge: 2500
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TRS6E65C,S1AQ TRS6E65C,S1AQ Toshiba Semiconductor and Storage Description: DIODE SIL CARB 650V 6A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 35pF @ 650V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TRS8E65C,S1Q TRS8E65C,S1Q Toshiba Semiconductor and Storage docget.jsp?did=14213&prodName=TRS8E65C Description: DIODE SCHOTTKY 650V 8A TO220-2L
Produkt ist nicht verfügbar
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TRS12E65C,S1Q TRS12E65C,S1Q Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TRS12E65C Description: DIODE SCHOTTKY 650V 12A TO220-2L
auf Bestellung 775 Stücke:
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TK7Q60W,S1VQ TK7Q60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK7Q60W Description: MOSFET N-CH 600V 7A IPAK-3
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH6R003NL,LQ TPH6R003NL,LQ Toshiba Semiconductor and Storage TPH6R003NL_datasheet_en_20140218.pdf?did=14012&prodName=TPH6R003NL Description: MOSFET N CH 30V 38A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2812 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.44 EUR
15+1.19 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.64 EUR
Mindestbestellmenge: 13
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TPN1600ANH,L1Q TPN1600ANH,L1Q Toshiba Semiconductor and Storage TPN1600ANH_datasheet_en_20191018.pdf?did=13538&prodName=TPN1600ANH Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 5875 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
13+1.36 EUR
100+0.92 EUR
500+0.74 EUR
1000+0.64 EUR
2000+0.62 EUR
Mindestbestellmenge: 9
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TP86R203NL,LQ TP86R203NL,LQ Toshiba Semiconductor and Storage TP86R203NL_datasheet_en_20140225.pdf?did=14088&prodName=TP86R203NL Description: MOSFET N CH 30V 19A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 13055 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.74 EUR
16+1.17 EUR
100+0.81 EUR
500+0.65 EUR
1000+0.60 EUR
Mindestbestellmenge: 11
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TK10V60W,LVQ TK10V60W,LVQ Toshiba Semiconductor and Storage TK10V60W_datasheet_en_20160520.pdf?did=14217&prodName=TK10V60W Description: MOSFET N-CH 600V 9.7A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 88.3W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TPH11003NL,LQ TPH11003NL,LQ Toshiba Semiconductor and Storage TPH11003NL_datasheet_en_20140217.pdf?did=14042&prodName=TPH11003NL Description: MOSFET N CH 30V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2288 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
21+0.84 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.40 EUR
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TK20G60W,RVQ TK20G60W,RVQ Toshiba Semiconductor and Storage TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W Description: MOSFET N CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.86 EUR
10+3.83 EUR
100+2.67 EUR
500+2.18 EUR
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TK12V60W,LVQ TK12V60W,LVQ Toshiba Semiconductor and Storage TK12V60W_datasheet_en_20150203.pdf?did=14171&prodName=TK12V60W Description: MOSFET N-CH 600V 11.5A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK16V60W,LVQ TK16V60W,LVQ Toshiba Semiconductor and Storage TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W,LVQ TK20V60W,LVQ Toshiba Semiconductor and Storage TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
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TK31V60W,LVQ TK31V60W,LVQ Toshiba Semiconductor and Storage TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.09 EUR
10+11.06 EUR
100+8.23 EUR
500+7.60 EUR
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TPN11003NL,LQ TPN11003NL,LQ Toshiba Semiconductor and Storage TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
17+1.07 EUR
100+0.70 EUR
500+0.54 EUR
1000+0.49 EUR
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TPN8R903NL,LQ TPN8R903NL,LQ Toshiba Semiconductor and Storage TPN8R903NL_datasheet_en_20140218.pdf?did=14026&prodName=TPN8R903NL Description: MOSFET N-CH 30V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 8122 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
20+0.91 EUR
100+0.65 EUR
500+0.59 EUR
1000+0.52 EUR
Mindestbestellmenge: 14
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TPN6R003NL,LQ TPN6R003NL,LQ Toshiba Semiconductor and Storage TPN6R003NL_datasheet_en_20140218.pdf?did=14069&prodName=TPN6R003NL Description: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2956 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
16+1.13 EUR
100+0.88 EUR
500+0.74 EUR
1000+0.61 EUR
Mindestbestellmenge: 13
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TPH8R903NL,LQ TPH8R903NL,LQ Toshiba Semiconductor and Storage TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL Description: MOSFET N CH 30V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3150 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
20+0.90 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 13
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TCK104G,LF TCK104G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
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TCK105G,LF TCK105G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
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SSM6J771G,LF SSM6J771G,LF Toshiba Semiconductor and Storage SSM6J771G_datasheet_en_20140312.pdf?did=14222&prodName=SSM6J771G Description: MOSFET P-CH 20V 5A 6WCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Produkt ist nicht verfügbar
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TCK104G,LF TCK104G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 4993 Stücke:
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TCK105G,LF TCK105G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 6000 Stücke:
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SSM6J771G,LF SSM6J771G,LF Toshiba Semiconductor and Storage SSM6J771G_datasheet_en_20140312.pdf?did=14222&prodName=SSM6J771G Description: MOSFET P-CH 20V 5A 6WCSP
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.69 EUR
17+1.06 EUR
100+0.70 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
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TCK104G,LF TCK104G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 4993 Stücke:
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TCK105G,LF TCK105G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
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TB6585AFTGC8,EL TB6585AFTGC8,EL Toshiba Semiconductor and Storage TB6585AFTG_datasheet_en_20130902.pdf?did=14351&prodName=TB6585AFTG Description: IC MOTOR DRIVER 4.5V-42V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 42V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 4.5V ~ 42V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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TB62771FTG,8,EL TB62771FTG,8,EL Toshiba Semiconductor and Storage TB62771FTG_datasheet_en_20130523.pdf?did=14147&prodName=TB62771FTG Description: IC LED DRV RGLTR PWM 20WQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Voltage - Output: 45V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 20-WQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 40V
Part Status: Active
auf Bestellung 10000 Stücke:
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5000+1.04 EUR
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TB62779FNG,EL TB62779FNG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62779FNG Description: IC LED DRVR LIN DIM 40MA 20SSOP
auf Bestellung 2000 Stücke:
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TB62781FNG,8,EL TB62781FNG,8,EL Toshiba Semiconductor and Storage TB62781FNG.pdf Description: IC LED DRIVER LINEAR 40MA 20SSOP
Produkt ist nicht verfügbar
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TB62802AFG,8,EL TB62802AFG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=11314&prodName=TB62802AFG Description: IC CCD CLOCK DRIVER 18HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 4.7V ~ 5.5V
Applications: CCD Driver
Supplier Device Package: 16-HSOP
Part Status: Active
Produkt ist nicht verfügbar
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TB62D612FTG,EL TB62D612FTG,EL Toshiba Semiconductor and Storage TB62D612FTG_datasheet_en_20210129.pdf?did=13449&prodName=TB62D612FTG Description: IC LED DRVR LIN PWM 40MA 36WQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 36-WQFN (6x6)
Dimming: Analog, I2C, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+3.45 EUR
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TB62720FG(8FFNICHI Toshiba Semiconductor and Storage Description: IC LED DVR 16CH CC 64HQFP
Produkt ist nicht verfügbar
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TB6585AFTGC8,EL TB6585AFTGC8,EL Toshiba Semiconductor and Storage TB6585AFTG_datasheet_en_20130902.pdf?did=14351&prodName=TB6585AFTG Description: IC MOTOR DRIVER 4.5V-42V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 42V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 4.5V ~ 42V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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TB62771FTG,8,EL TB62771FTG,8,EL Toshiba Semiconductor and Storage TB62771FTG_datasheet_en_20130523.pdf?did=14147&prodName=TB62771FTG Description: IC LED DRV RGLTR PWM 20WQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Voltage - Output: 45V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 20-WQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 40V
Part Status: Active
auf Bestellung 12421 Stücke:
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8+2.46 EUR
10+2.22 EUR
25+2.09 EUR
100+1.78 EUR
250+1.67 EUR
500+1.46 EUR
1000+1.21 EUR
2500+1.13 EUR
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TB62779FNG,EL TB62779FNG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62779FNG Description: IC LED DRVR LIN DIM 40MA 20SSOP
auf Bestellung 1355 Stücke:
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TB62781FNG,8,EL TB62781FNG,8,EL Toshiba Semiconductor and Storage TB62781FNG.pdf Description: IC LED DRIVER LINEAR 40MA 20SSOP
Produkt ist nicht verfügbar
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TB62802AFG,8,EL TB62802AFG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=11314&prodName=TB62802AFG Description: IC CCD CLOCK DRIVER 18HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 4.7V ~ 5.5V
Applications: CCD Driver
Supplier Device Package: 16-HSOP
Part Status: Active
auf Bestellung 274 Stücke:
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5+3.82 EUR
10+2.83 EUR
25+2.58 EUR
100+2.31 EUR
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TB62D612FTG,EL TB62D612FTG,EL Toshiba Semiconductor and Storage TB62D612FTG_datasheet_en_20210129.pdf?did=13449&prodName=TB62D612FTG Description: IC LED DRVR LIN PWM 40MA 36WQFN
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 36-WQFN (6x6)
Dimming: Analog, I2C, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 22140 Stücke:
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100+4.33 EUR
250+4.11 EUR
500+3.98 EUR
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TB62779FNG,EL TB62779FNG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62779FNG Description: IC LED DRVR LIN DIM 40MA 20SSOP
Produkt ist nicht verfügbar
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SSM3J114TU(TE85L) SSM3J114TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J114TU Description: MOSFET P-CH 20V 1.8A UFM
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SSM3J114TU(TE85L) SSM3J114TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J114TU Description: MOSFET P-CH 20V 1.8A UFM
auf Bestellung 679 Stücke:
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TK10Q60W,S1VQ TK10Q60W_datasheet_en_20131225.pdf?did=13503&prodName=TK10Q60W
TK10Q60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 75 Stücke:
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Anzahl Preis
4+4.70 EUR
75+3.77 EUR
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TK16C60W,S1VQ docget.jsp?pid=TK16C60W&lang=en&type=datasheet
TK16C60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A I2PAK
auf Bestellung 280 Stücke:
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TK20C60W,S1VQ docget.jsp?type=datasheet&lang=en&pid=TK20C60W
TK20C60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A I2PAK
auf Bestellung 288 Stücke:
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TK10V60W,LVQ TK10V60W_datasheet_en_20160520.pdf?did=14217&prodName=TK10V60W
TK10V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 88.3W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TK12V60W,LVQ TK12V60W_datasheet_en_20150203.pdf?did=14171&prodName=TK12V60W
TK12V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK16V60W,LVQ TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W
TK16V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W,LVQ TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W
TK20V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
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TK31V60W,LVQ TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W
TK31V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
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TK20A60W,S5VX docget.jsp?did=14063&prodName=TK20A60W
TK20A60W,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.23 EUR
Mindestbestellmenge: 3
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TK20N60W,S1VF docget.jsp?did=13898&prodName=TK20N60W
TK20N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.06 EUR
30+7.60 EUR
Mindestbestellmenge: 2
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TPN11003NL,LQ TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL
TPN11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
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TPN8R903NL,LQ TPN8R903NL_datasheet_en_20140218.pdf?did=14026&prodName=TPN8R903NL
TPN8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.50 EUR
Mindestbestellmenge: 3000
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TPN6R003NL,LQ TPN6R003NL_datasheet_en_20140218.pdf?did=14069&prodName=TPN6R003NL
TPN6R003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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TPH11003NL,LQ TPH11003NL_datasheet_en_20140217.pdf?did=14042&prodName=TPH11003NL
TPH11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
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TPH8R903NL,LQ TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL
TPH8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
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TPH6R003NL,LQ TPH6R003NL_datasheet_en_20140218.pdf?did=14012&prodName=TPH6R003NL
TPH6R003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 38A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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TPN1600ANH,L1Q TPN1600ANH_datasheet_en_20191018.pdf?did=13538&prodName=TPN1600ANH
TPN1600ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.56 EUR
Mindestbestellmenge: 5000
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TP86R203NL,LQ TP86R203NL_datasheet_en_20140225.pdf?did=14088&prodName=TP86R203NL
TP86R203NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 19A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.54 EUR
5000+0.52 EUR
Mindestbestellmenge: 2500
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TRS6E65C,S1AQ
TRS6E65C,S1AQ
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 6A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 35pF @ 650V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TRS8E65C,S1Q docget.jsp?did=14213&prodName=TRS8E65C
TRS8E65C,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 650V 8A TO220-2L
Produkt ist nicht verfügbar
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TRS12E65C,S1Q docget.jsp?type=datasheet&lang=en&pid=TRS12E65C
TRS12E65C,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 650V 12A TO220-2L
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
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TK7Q60W,S1VQ docget.jsp?type=datasheet&lang=en&pid=TK7Q60W
TK7Q60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A IPAK-3
auf Bestellung 300 Stücke:
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TPH6R003NL,LQ TPH6R003NL_datasheet_en_20140218.pdf?did=14012&prodName=TPH6R003NL
TPH6R003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 38A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2812 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
15+1.19 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.64 EUR
Mindestbestellmenge: 13
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TPN1600ANH,L1Q TPN1600ANH_datasheet_en_20191018.pdf?did=13538&prodName=TPN1600ANH
TPN1600ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 5875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
13+1.36 EUR
100+0.92 EUR
500+0.74 EUR
1000+0.64 EUR
2000+0.62 EUR
Mindestbestellmenge: 9
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TP86R203NL,LQ TP86R203NL_datasheet_en_20140225.pdf?did=14088&prodName=TP86R203NL
TP86R203NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 19A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 13055 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
16+1.17 EUR
100+0.81 EUR
500+0.65 EUR
1000+0.60 EUR
Mindestbestellmenge: 11
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TK10V60W,LVQ TK10V60W_datasheet_en_20160520.pdf?did=14217&prodName=TK10V60W
TK10V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 88.3W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TPH11003NL,LQ TPH11003NL_datasheet_en_20140217.pdf?did=14042&prodName=TPH11003NL
TPH11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
21+0.84 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.40 EUR
Mindestbestellmenge: 14
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TK20G60W,RVQ TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W
TK20G60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
10+3.83 EUR
100+2.67 EUR
500+2.18 EUR
Mindestbestellmenge: 4
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TK12V60W,LVQ TK12V60W_datasheet_en_20150203.pdf?did=14171&prodName=TK12V60W
TK12V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK16V60W,LVQ TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W
TK16V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W,LVQ TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W
TK20V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
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TK31V60W,LVQ TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W
TK31V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.09 EUR
10+11.06 EUR
100+8.23 EUR
500+7.60 EUR
Mindestbestellmenge: 2
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TPN11003NL,LQ TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL
TPN11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.07 EUR
100+0.70 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
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TPN8R903NL,LQ TPN8R903NL_datasheet_en_20140218.pdf?did=14026&prodName=TPN8R903NL
TPN8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 8122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
20+0.91 EUR
100+0.65 EUR
500+0.59 EUR
1000+0.52 EUR
Mindestbestellmenge: 14
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TPN6R003NL,LQ TPN6R003NL_datasheet_en_20140218.pdf?did=14069&prodName=TPN6R003NL
TPN6R003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
16+1.13 EUR
100+0.88 EUR
500+0.74 EUR
1000+0.61 EUR
Mindestbestellmenge: 13
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TPH8R903NL,LQ TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL
TPH8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
20+0.90 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 13
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TCK104G,LF docget.jsp?did=14030&prodName=TCK104G
TCK104G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TCK105G,LF docget.jsp?did=14030&prodName=TCK104G
TCK105G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM6J771G,LF SSM6J771G_datasheet_en_20140312.pdf?did=14222&prodName=SSM6J771G
SSM6J771G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A 6WCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Produkt ist nicht verfügbar
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TCK104G,LF docget.jsp?did=14030&prodName=TCK104G
TCK104G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 4993 Stücke:
Lieferzeit 10-14 Tag (e)
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TCK105G,LF docget.jsp?did=14030&prodName=TCK104G
TCK105G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM6J771G,LF SSM6J771G_datasheet_en_20140312.pdf?did=14222&prodName=SSM6J771G
SSM6J771G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A 6WCSP
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.06 EUR
100+0.70 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
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TCK104G,LF docget.jsp?did=14030&prodName=TCK104G
TCK104G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 4993 Stücke:
Lieferzeit 10-14 Tag (e)
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TCK105G,LF docget.jsp?did=14030&prodName=TCK104G
TCK105G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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TB6585AFTGC8,EL TB6585AFTG_datasheet_en_20130902.pdf?did=14351&prodName=TB6585AFTG
TB6585AFTGC8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 4.5V-42V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 42V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 4.5V ~ 42V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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TB62771FTG,8,EL TB62771FTG_datasheet_en_20130523.pdf?did=14147&prodName=TB62771FTG
TB62771FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRV RGLTR PWM 20WQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Voltage - Output: 45V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 20-WQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 40V
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.04 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TB62779FNG,EL docget.jsp?type=datasheet&lang=en&pid=TB62779FNG
TB62779FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN DIM 40MA 20SSOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62781FNG,8,EL TB62781FNG.pdf
TB62781FNG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB62802AFG,8,EL docget.jsp?did=11314&prodName=TB62802AFG
TB62802AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC CCD CLOCK DRIVER 18HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 4.7V ~ 5.5V
Applications: CCD Driver
Supplier Device Package: 16-HSOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB62D612FTG,EL TB62D612FTG_datasheet_en_20210129.pdf?did=13449&prodName=TB62D612FTG
TB62D612FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN PWM 40MA 36WQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 36-WQFN (6x6)
Dimming: Analog, I2C, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+3.45 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
TB62720FG(8FFNICHI
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DVR 16CH CC 64HQFP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB6585AFTGC8,EL TB6585AFTG_datasheet_en_20130902.pdf?did=14351&prodName=TB6585AFTG
TB6585AFTGC8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 4.5V-42V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 42V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 4.5V ~ 42V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB62771FTG,8,EL TB62771FTG_datasheet_en_20130523.pdf?did=14147&prodName=TB62771FTG
TB62771FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRV RGLTR PWM 20WQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Voltage - Output: 45V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 20-WQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 40V
Part Status: Active
auf Bestellung 12421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+2.22 EUR
25+2.09 EUR
100+1.78 EUR
250+1.67 EUR
500+1.46 EUR
1000+1.21 EUR
2500+1.13 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TB62779FNG,EL docget.jsp?type=datasheet&lang=en&pid=TB62779FNG
TB62779FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN DIM 40MA 20SSOP
auf Bestellung 1355 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TB62781FNG,8,EL TB62781FNG.pdf
TB62781FNG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB62802AFG,8,EL docget.jsp?did=11314&prodName=TB62802AFG
TB62802AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC CCD CLOCK DRIVER 18HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 4.7V ~ 5.5V
Applications: CCD Driver
Supplier Device Package: 16-HSOP
Part Status: Active
auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.82 EUR
10+2.83 EUR
25+2.58 EUR
100+2.31 EUR
250+2.18 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TB62D612FTG,EL TB62D612FTG_datasheet_en_20210129.pdf?did=13449&prodName=TB62D612FTG
TB62D612FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN PWM 40MA 36WQFN
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 36-WQFN (6x6)
Dimming: Analog, I2C, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 22140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.86 EUR
10+5.20 EUR
25+4.79 EUR
100+4.33 EUR
250+4.11 EUR
500+3.98 EUR
1000+3.87 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TB62779FNG,EL docget.jsp?type=datasheet&lang=en&pid=TB62779FNG
TB62779FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN DIM 40MA 20SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J114TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3J114TU
SSM3J114TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
Produkt ist nicht verfügbar
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SSM3J114TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3J114TU
SSM3J114TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
auf Bestellung 679 Stücke:
Lieferzeit 10-14 Tag (e)
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