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SSM3J15CT(TPL3) SSM3J15CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J15CT Description: MOSFET P-CH 30V 0.1A CST3
Produkt ist nicht verfügbar
SSM3J16CT(TPL3) SSM3J16CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J16CT Description: MOSFET P-CH 20V 0.1A CST3
Produkt ist nicht verfügbar
SSM3J304T(TE85L,F) SSM3J304T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=7567&prodName=SSM3J304T Description: MOSFET P-CH 20V 2.3A TSM
Produkt ist nicht verfügbar
SSM3J306T(TE85L,F) SSM3J306T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=7571&prodName=SSM3J306T Description: MOSFET P-CH 30V 2.4A TSM
Produkt ist nicht verfügbar
SSM3J325F,LF SSM3J325F,LF Toshiba Semiconductor and Storage SSM3J325F_datasheet_en_20161110.pdf?did=2054&prodName=SSM3J325F Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Produkt ist nicht verfügbar
SSM3J35MFV,L3F SSM3J35MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=10000&prodName=SSM3J35MFV Description: MOSFET P-CH 20V 100MA VESM
Produkt ist nicht verfügbar
SSM3J36MFV,L3F SSM3J36MFV,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J36MFV Description: MOSFET P-CH 20V 0.33A VESM
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J56MFV,L3F SSM3J56MFV,L3F Toshiba Semiconductor and Storage SSM3J56MFV_datasheet_en_20140301.pdf?did=7801&prodName=SSM3J56MFV Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 416000 Stücke:
Lieferzeit 21-28 Tag (e)
8000+0.18 EUR
16000+ 0.16 EUR
56000+ 0.13 EUR
Mindestbestellmenge: 8000
SSM3K01T(TE85L,F) SSM3K01T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K01T Description: MOSFET N-CH 30V 3.2A TSM
Produkt ist nicht verfügbar
SSM3K16CT(TPL3) SSM3K16CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K16CT Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
Produkt ist nicht verfügbar
SSM3K301T(TE85L,F) SSM3K301T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K301T Description: MOSFET N-CH 20V 3.5A TSM
Produkt ist nicht verfügbar
SSM3K302T(TE85L,F) SSM3K302T(TE85L,F) Toshiba Semiconductor and Storage SSM3K302T.pdf Description: MOSFET N-CH 30V 3A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V
Power Dissipation (Max): 700mW (Ta)
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Produkt ist nicht verfügbar
SSM3K309T(TE85L,F) SSM3K309T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K309T Description: MOSFET N-CH 20V 4.7A TSM
Produkt ist nicht verfügbar
SSM3K310T(TE85L,F) SSM3K310T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K310T Description: MOSFET N-CH 20V 5A S-MOS
Produkt ist nicht verfügbar
SSM3K318T,LF SSM3K318T,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K318T Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
SSM3K7002BF,LF SSM3K7002BF,LF Toshiba Semiconductor and Storage SSM3K7002BF.pdf Description: MOSFET N-CH 60V 200MA SC59
Produkt ist nicht verfügbar
SSM6L11TU(TE85L,F) SSM6L11TU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6L11TU Description: MOSFET N/P-CH 20V 0.5A UF6 S
Produkt ist nicht verfügbar
SSM6L16FE(TE85L,F) SSM6L16FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6L16FE Description: MOSFET N/P-CH 20V 0.1A ES6
Produkt ist nicht verfügbar
SSM6L35FU(TE85L,F) SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=11256&prodName=SSM6L35FU Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2900 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6N58NU,LF SSM6N58NU,LF Toshiba Semiconductor and Storage SSM6N58NU_datasheet_en_20210917.pdf?did=13890&prodName=SSM6N58NU Description: MOSFET 2N-CH 30V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
auf Bestellung 135000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.29 EUR
6000+ 0.28 EUR
9000+ 0.25 EUR
75000+ 0.23 EUR
Mindestbestellmenge: 3000
TAR5SB18(TE85L,F) TAR5SB18(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TAR5SB18 Description: IC REG LDO 1.8V 0.2A SMV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TAR5SB30(TE85L,F) TAR5SB30(TE85L,F) Toshiba Semiconductor and Storage TAR5SB30_datasheet_en_20140301.pdf?did=18320&prodName=TAR5SB30 Description: IC REG LINEAR 3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TAR5SB33(TE85L,F) TAR5SB33(TE85L,F) Toshiba Semiconductor and Storage Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.39 EUR
6000+ 0.36 EUR
15000+ 0.34 EUR
30000+ 0.32 EUR
Mindestbestellmenge: 3000
TAR5SB50(TE85L,F) TAR5SB50(TE85L,F) Toshiba Semiconductor and Storage Description: IC REG LINEAR 5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TC4050BF(EL,N,F) TC4050BF(EL,N,F) Toshiba Semiconductor and Storage Description: IC BUFFER NON-INVERT 18V 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 48mA
Supplier Device Package: 16-SOP
Part Status: Active
Produkt ist nicht verfügbar
TC4584BF(EL,N,F) TC4584BF(EL,N,F) Toshiba Semiconductor and Storage TC4584BF_datasheet_en_20140301.pdf?did=20900&prodName=TC4584BF Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.75V ~ 11.6V
Input Logic Level - Low: 1.25V ~ 3.4V
Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.68 EUR
Mindestbestellmenge: 2000
TC4S69F(TE85L,F) TC4S69F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20165&prodName=TC4S69F Description: IC INVERTER 1CH 1-INP SMV
Produkt ist nicht verfügbar
TC4SU11F(T5L,F,T) TC4SU11F(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC4SU11F Description: IC GATE NAND 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC74HC4051AFT(EL,M TC74HC4051AFT(EL,M Toshiba Semiconductor and Storage docget.jsp?did=16132&prodName=TC74HC4051AP Description: IC MUX/DEMUX 8X1 16TSSOP
Produkt ist nicht verfügbar
TC74VHC27FT(ELK,M) TC74VHC27FT(ELK,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC74VHC27FT Description: IC GATE NOR 3CH 3-INP 14-TSSOP
Produkt ist nicht verfügbar
TC7LX1108WBG(EL,AH TC7LX1108WBG(EL,AH Toshiba Semiconductor and Storage Description: IC TRANSLATOR BIDIR 24WCSPC
Produkt ist nicht verfügbar
TC7MBL3257CFT(EL) TC7MBL3257CFT(EL) Toshiba Semiconductor and Storage docget.jsp?did=57109&prodName=TC7MBL3257CFK Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
Produkt ist nicht verfügbar
TC7SET08F,LJ TC7SET08F,LJ Toshiba Semiconductor and Storage docget.jsp?did=20075&prodName=TC7SET08F Description: IC GATE AND 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC7SET125F(TE85L,F TC7SET125F(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=657&prodName=TC7SET125F Description: IC BUFFER NON-INVERT 5.5V SMV
Produkt ist nicht verfügbar
TC7SET125FU,LJ(CT TC7SET125FU,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=53719&prodName=TC7SET125FU Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 42000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.14 EUR
6000+ 0.12 EUR
15000+ 0.11 EUR
30000+ 0.1 EUR
Mindestbestellmenge: 3000
TC7SH02F,LJ TC7SH02F,LJ Toshiba Semiconductor and Storage TC7SH02F,fU_Rev2009.pdf Description: IC GATE NOR 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC7SH08F,LJ TC7SH08F,LJ Toshiba Semiconductor and Storage TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
TC7SH32F,LJ Toshiba Semiconductor and Storage TC7SH32F,FU.pdf Description: IC GATE OR 1CH 2-INP SMV
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
TC7SH34FS(TPL3) TC7SH34FS(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH34FS Description: IC GATE L-MOS FSV
Produkt ist nicht verfügbar
TC7SZ17FU,LJ(CT TC7SZ17FU,LJ(CT Toshiba Semiconductor and Storage TC7SZ17FU_datasheet_en_20170517.pdf?did=54618&prodName=TC7SZ17FU Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 5-SSOP
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.14 EUR
6000+ 0.12 EUR
Mindestbestellmenge: 3000
TC7W02FK(TE85L,F) TC7W02FK(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20201&prodName=TC7W02FK Description: IC GATE NOR 2CH 2-INP US8
Produkt ist nicht verfügbar
TC7W240FU(TE12L,F) TC7W240FU(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7W240FU Description: IC GATE L-MOS SM8
Produkt ist nicht verfügbar
TC7WP3125FC(TE85L) TC7WP3125FC(TE85L) Toshiba Semiconductor and Storage docget.jsp?did=6285&prodName=TC7WP3125FK Description: IC BUS SWITCH 2 X 1:1 CST8
Produkt ist nicht verfügbar
TC7WP3125FK(T5L,F) TC7WP3125FK(T5L,F) Toshiba Semiconductor and Storage docget.jsp?did=6285&prodName=TC7WP3125FK Description: IC BUS SWITCH 2 X 1:1 US8
Produkt ist nicht verfügbar
TC7WPN3125FC(TE85L TC7WPN3125FC(TE85L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WPN3125FC Description: IC BUS SWITCH SPST DUAL CST8
Produkt ist nicht verfügbar
TC7WPN3125FK(T5L,F TC7WPN3125FK(T5L,F Toshiba Semiconductor and Storage docget.jsp?did=6287&prodName=TC7WPN3125FC Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TK20G60W,RVQ TK20G60W,RVQ Toshiba Semiconductor and Storage TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W Description: MOSFET N CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
TK39A60W,S4VX TK39A60W,S4VX Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK39A60W Description: MOSFET N-CH 600V 39A TO220-3
Produkt ist nicht verfügbar
TK10Q60W,S1VQ TK10Q60W,S1VQ Toshiba Semiconductor and Storage TK10Q60W_datasheet_en_20131225.pdf?did=13503&prodName=TK10Q60W Description: MOSFET N-CH 600V 9.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 75 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.94 EUR
75+ 5.57 EUR
Mindestbestellmenge: 4
TK16C60W,S1VQ TK16C60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?pid=TK16C60W&lang=en&type=datasheet Description: MOSFET N-CH 600V 15.8A I2PAK
auf Bestellung 280 Stücke:
Lieferzeit 21-28 Tag (e)
TK20C60W,S1VQ TK20C60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK20C60W Description: MOSFET N-CH 600V 20A I2PAK
auf Bestellung 288 Stücke:
Lieferzeit 21-28 Tag (e)
TK10V60W,LVQ TK10V60W,LVQ Toshiba Semiconductor and Storage docget.jsp?pid=TK10V60W&lang=en&type=datasheet Description: MOSFET N-CH 600V 9.7A 5DFN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
TK12V60W,LVQ TK12V60W,LVQ Toshiba Semiconductor and Storage docget.jsp?did=14171&prodName=TK12V60W Description: MOSFET N-CH 600V 11.5A 4DFN
Produkt ist nicht verfügbar
TK16V60W,LVQ TK16V60W,LVQ Toshiba Semiconductor and Storage TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
TK20V60W,LVQ TK20V60W,LVQ Toshiba Semiconductor and Storage TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
TK31V60W,LVQ TK31V60W,LVQ Toshiba Semiconductor and Storage TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
TK20A60W,S5VX TK20A60W,S5VX Toshiba Semiconductor and Storage TK20A60W_datasheet_en_20160908.pdf?did=14063&prodName=TK20A60W Description: MOSFET N-CH 600V 20A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 64 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.86 EUR
50+ 5.45 EUR
Mindestbestellmenge: 4
TK20N60W,S1VF TK20N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13898&prodName=TK20N60W Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.64 EUR
10+ 12.31 EUR
Mindestbestellmenge: 2
TPN11003NL,LQ TPN11003NL,LQ Toshiba Semiconductor and Storage TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
TPN8R903NL,LQ TPN8R903NL,LQ Toshiba Semiconductor and Storage docget.jsp?did=14026&prodName=TPN8R903NL Description: MOSFET N-CH 30V 20A 8TSON
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J15CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3J15CT
SSM3J15CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 0.1A CST3
Produkt ist nicht verfügbar
SSM3J16CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3J16CT
SSM3J16CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.1A CST3
Produkt ist nicht verfügbar
SSM3J304T(TE85L,F) docget.jsp?did=7567&prodName=SSM3J304T
SSM3J304T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.3A TSM
Produkt ist nicht verfügbar
SSM3J306T(TE85L,F) docget.jsp?did=7571&prodName=SSM3J306T
SSM3J306T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.4A TSM
Produkt ist nicht verfügbar
SSM3J325F,LF SSM3J325F_datasheet_en_20161110.pdf?did=2054&prodName=SSM3J325F
SSM3J325F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Produkt ist nicht verfügbar
SSM3J35MFV,L3F docget.jsp?did=10000&prodName=SSM3J35MFV
SSM3J35MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 100MA VESM
Produkt ist nicht verfügbar
SSM3J36MFV,L3F docget.jsp?type=datasheet&lang=en&pid=SSM3J36MFV
SSM3J36MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.33A VESM
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J56MFV,L3F SSM3J56MFV_datasheet_en_20140301.pdf?did=7801&prodName=SSM3J56MFV
SSM3J56MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 416000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8000+0.18 EUR
16000+ 0.16 EUR
56000+ 0.13 EUR
Mindestbestellmenge: 8000
SSM3K01T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K01T
SSM3K01T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3.2A TSM
Produkt ist nicht verfügbar
SSM3K16CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3K16CT
SSM3K16CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
Produkt ist nicht verfügbar
SSM3K301T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K301T
SSM3K301T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.5A TSM
Produkt ist nicht verfügbar
SSM3K302T(TE85L,F) SSM3K302T.pdf
SSM3K302T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V
Power Dissipation (Max): 700mW (Ta)
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Produkt ist nicht verfügbar
SSM3K309T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K309T
SSM3K309T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.7A TSM
Produkt ist nicht verfügbar
SSM3K310T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K310T
SSM3K310T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 5A S-MOS
Produkt ist nicht verfügbar
SSM3K318T,LF docget.jsp?type=datasheet&lang=en&pid=SSM3K318T
SSM3K318T,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
SSM3K7002BF,LF SSM3K7002BF.pdf
SSM3K7002BF,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SC59
Produkt ist nicht verfügbar
SSM6L11TU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM6L11TU
SSM6L11TU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A UF6 S
Produkt ist nicht verfügbar
SSM6L16FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM6L16FE
SSM6L16FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.1A ES6
Produkt ist nicht verfügbar
SSM6L35FU(TE85L,F) docget.jsp?did=11256&prodName=SSM6L35FU
SSM6L35FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2900 Stücke:
Lieferzeit 21-28 Tag (e)
SSM6N58NU,LF SSM6N58NU_datasheet_en_20210917.pdf?did=13890&prodName=SSM6N58NU
SSM6N58NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
auf Bestellung 135000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.29 EUR
6000+ 0.28 EUR
9000+ 0.25 EUR
75000+ 0.23 EUR
Mindestbestellmenge: 3000
TAR5SB18(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=TAR5SB18
TAR5SB18(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A SMV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TAR5SB30(TE85L,F) TAR5SB30_datasheet_en_20140301.pdf?did=18320&prodName=TAR5SB30
TAR5SB30(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TAR5SB33(TE85L,F)
TAR5SB33(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.39 EUR
6000+ 0.36 EUR
15000+ 0.34 EUR
30000+ 0.32 EUR
Mindestbestellmenge: 3000
TAR5SB50(TE85L,F)
TAR5SB50(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TC4050BF(EL,N,F)
TC4050BF(EL,N,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 18V 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 48mA
Supplier Device Package: 16-SOP
Part Status: Active
Produkt ist nicht verfügbar
TC4584BF(EL,N,F) TC4584BF_datasheet_en_20140301.pdf?did=20900&prodName=TC4584BF
TC4584BF(EL,N,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.75V ~ 11.6V
Input Logic Level - Low: 1.25V ~ 3.4V
Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+0.68 EUR
Mindestbestellmenge: 2000
TC4S69F(TE85L,F) docget.jsp?did=20165&prodName=TC4S69F
TC4S69F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP SMV
Produkt ist nicht verfügbar
TC4SU11F(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=TC4SU11F
TC4SU11F(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC74HC4051AFT(EL,M docget.jsp?did=16132&prodName=TC74HC4051AP
TC74HC4051AFT(EL,M
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 8X1 16TSSOP
Produkt ist nicht verfügbar
TC74VHC27FT(ELK,M) docget.jsp?type=datasheet&lang=en&pid=TC74VHC27FT
TC74VHC27FT(ELK,M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 3CH 3-INP 14-TSSOP
Produkt ist nicht verfügbar
TC7LX1108WBG(EL,AH
TC7LX1108WBG(EL,AH
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLATOR BIDIR 24WCSPC
Produkt ist nicht verfügbar
TC7MBL3257CFT(EL) docget.jsp?did=57109&prodName=TC7MBL3257CFK
TC7MBL3257CFT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
Produkt ist nicht verfügbar
TC7SET08F,LJ docget.jsp?did=20075&prodName=TC7SET08F
TC7SET08F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC7SET125F(TE85L,F docget.jsp?did=657&prodName=TC7SET125F
TC7SET125F(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Produkt ist nicht verfügbar
TC7SET125FU,LJ(CT docget.jsp?did=53719&prodName=TC7SET125FU
TC7SET125FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 42000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.12 EUR
15000+ 0.11 EUR
30000+ 0.1 EUR
Mindestbestellmenge: 3000
TC7SH02F,LJ TC7SH02F,fU_Rev2009.pdf
TC7SH02F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC7SH08F,LJ TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU
TC7SH08F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
TC7SH32F,LJ TC7SH32F,FU.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
TC7SH34FS(TPL3) docget.jsp?type=datasheet&lang=en&pid=TC7SH34FS
TC7SH34FS(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS FSV
Produkt ist nicht verfügbar
TC7SZ17FU,LJ(CT TC7SZ17FU_datasheet_en_20170517.pdf?did=54618&prodName=TC7SZ17FU
TC7SZ17FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 5-SSOP
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.12 EUR
Mindestbestellmenge: 3000
TC7W02FK(TE85L,F) docget.jsp?did=20201&prodName=TC7W02FK
TC7W02FK(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP US8
Produkt ist nicht verfügbar
TC7W240FU(TE12L,F) docget.jsp?type=datasheet&lang=en&pid=TC7W240FU
TC7W240FU(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS SM8
Produkt ist nicht verfügbar
TC7WP3125FC(TE85L) docget.jsp?did=6285&prodName=TC7WP3125FK
TC7WP3125FC(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 CST8
Produkt ist nicht verfügbar
TC7WP3125FK(T5L,F) docget.jsp?did=6285&prodName=TC7WP3125FK
TC7WP3125FK(T5L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
Produkt ist nicht verfügbar
TC7WPN3125FC(TE85L docget.jsp?type=datasheet&lang=en&pid=TC7WPN3125FC
TC7WPN3125FC(TE85L
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
Produkt ist nicht verfügbar
TC7WPN3125FK(T5L,F docget.jsp?did=6287&prodName=TC7WPN3125FC
TC7WPN3125FK(T5L,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TK20G60W,RVQ TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W
TK20G60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
TK39A60W,S4VX docget.jsp?type=datasheet&lang=en&pid=TK39A60W
TK39A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 39A TO220-3
Produkt ist nicht verfügbar
TK10Q60W,S1VQ TK10Q60W_datasheet_en_20131225.pdf?did=13503&prodName=TK10Q60W
TK10Q60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 75 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.94 EUR
75+ 5.57 EUR
Mindestbestellmenge: 4
TK16C60W,S1VQ docget.jsp?pid=TK16C60W&lang=en&type=datasheet
TK16C60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A I2PAK
auf Bestellung 280 Stücke:
Lieferzeit 21-28 Tag (e)
TK20C60W,S1VQ docget.jsp?type=datasheet&lang=en&pid=TK20C60W
TK20C60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A I2PAK
auf Bestellung 288 Stücke:
Lieferzeit 21-28 Tag (e)
TK10V60W,LVQ docget.jsp?pid=TK10V60W&lang=en&type=datasheet
TK10V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A 5DFN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
TK12V60W,LVQ docget.jsp?did=14171&prodName=TK12V60W
TK12V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A 4DFN
Produkt ist nicht verfügbar
TK16V60W,LVQ TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W
TK16V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
TK20V60W,LVQ TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W
TK20V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
TK31V60W,LVQ TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W
TK31V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
TK20A60W,S5VX TK20A60W_datasheet_en_20160908.pdf?did=14063&prodName=TK20A60W
TK20A60W,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 64 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.86 EUR
50+ 5.45 EUR
Mindestbestellmenge: 4
TK20N60W,S1VF docget.jsp?did=13898&prodName=TK20N60W
TK20N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.64 EUR
10+ 12.31 EUR
Mindestbestellmenge: 2
TPN11003NL,LQ TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL
TPN11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
TPN8R903NL,LQ docget.jsp?did=14026&prodName=TPN8R903NL
TPN8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8TSON
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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